EP3143648A4 - Method of forming a light-emitting device - Google Patents

Method of forming a light-emitting device Download PDF

Info

Publication number
EP3143648A4
EP3143648A4 EP15792197.4A EP15792197A EP3143648A4 EP 3143648 A4 EP3143648 A4 EP 3143648A4 EP 15792197 A EP15792197 A EP 15792197A EP 3143648 A4 EP3143648 A4 EP 3143648A4
Authority
EP
European Patent Office
Prior art keywords
light
forming
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15792197.4A
Other languages
German (de)
French (fr)
Other versions
EP3143648A1 (en
Inventor
Zhengang JU
Wei Liu
Xueliang ZHANG
Swee Tiam TAN
Yun JI
Zi-hui ZHANG
Hilmi Volkan Demir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanyang Technological University
Original Assignee
Nanyang Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Technological University filed Critical Nanyang Technological University
Publication of EP3143648A1 publication Critical patent/EP3143648A1/en
Publication of EP3143648A4 publication Critical patent/EP3143648A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
EP15792197.4A 2014-05-14 2015-05-07 Method of forming a light-emitting device Withdrawn EP3143648A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461996662P 2014-05-14 2014-05-14
PCT/SG2015/050100 WO2015174924A1 (en) 2014-05-14 2015-05-07 Method of forming a light-emitting device

Publications (2)

Publication Number Publication Date
EP3143648A1 EP3143648A1 (en) 2017-03-22
EP3143648A4 true EP3143648A4 (en) 2017-09-27

Family

ID=54480318

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15792197.4A Withdrawn EP3143648A4 (en) 2014-05-14 2015-05-07 Method of forming a light-emitting device

Country Status (4)

Country Link
EP (1) EP3143648A4 (en)
CN (1) CN106463596B (en)
TW (1) TW201547053A (en)
WO (1) WO2015174924A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017106410A1 (en) * 2017-03-24 2018-09-27 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component
TWI633681B (en) * 2017-06-09 2018-08-21 美商晶典有限公司 Micro led display module manufacturing method
CN107293623A (en) * 2017-07-12 2017-10-24 厦门乾照光电股份有限公司 A kind of LED chip and preparation method thereof
DE102018119688A1 (en) * 2018-08-14 2020-02-20 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component with a first contact element, which has a first and a second section, and method for producing the optoelectronic semiconductor component
CN111933765B (en) * 2020-07-03 2022-04-26 厦门士兰明镓化合物半导体有限公司 Miniature light-emitting diode and manufacturing method thereof, and miniature LED display module and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126016A1 (en) * 2005-05-12 2007-06-07 Epistar Corporation Light emitting device and manufacture method thereof
EP2194586A1 (en) * 2008-12-08 2010-06-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20110291148A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20130015483A1 (en) * 2011-07-12 2013-01-17 Kabushiki Kaisha Toshiba Semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070126016A1 (en) * 2005-05-12 2007-06-07 Epistar Corporation Light emitting device and manufacture method thereof
EP2194586A1 (en) * 2008-12-08 2010-06-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20110291148A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20130015483A1 (en) * 2011-07-12 2013-01-17 Kabushiki Kaisha Toshiba Semiconductor light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015174924A1 *

Also Published As

Publication number Publication date
EP3143648A1 (en) 2017-03-22
CN106463596B (en) 2019-07-09
TW201547053A (en) 2015-12-16
CN106463596A (en) 2017-02-22
WO2015174924A1 (en) 2015-11-19

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Effective date: 20170825

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Ipc: H01L 33/00 20100101ALI20170821BHEP

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Effective date: 20190529