EP3092706A1 - Procédé de fonctionnement d'un redresseur actif, ensemble de circuits et logiciel - Google Patents

Procédé de fonctionnement d'un redresseur actif, ensemble de circuits et logiciel

Info

Publication number
EP3092706A1
EP3092706A1 EP14815748.0A EP14815748A EP3092706A1 EP 3092706 A1 EP3092706 A1 EP 3092706A1 EP 14815748 A EP14815748 A EP 14815748A EP 3092706 A1 EP3092706 A1 EP 3092706A1
Authority
EP
European Patent Office
Prior art keywords
value
drive mode
electrical
semiconductor switching
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14815748.0A
Other languages
German (de)
English (en)
Inventor
Christopher Otte
Paul Mehringer
Wolfgang Feiler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEG Automotive Germany GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP3092706A1 publication Critical patent/EP3092706A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied

Definitions

  • the present invention relates to a method of operating an active rectifier, a circuit arrangement and a computer program.
  • a 14V vehicle electrical system is supplied with electrical energy via a 14V generator.
  • the generator is generally a three- or more-phase electric machine that is driven by the internal combustion engine of the motor vehicle and generates three-phase current that is rectified by a rectifier.
  • an abrupt load drop which is referred to as a "load dump"
  • a load dump initially continues to deliver an undiminished electrical current to the electrical system and generate a high electrical voltage, depending on the capacitance present in the vehicle electrical system the voltage value already rises within a few milliseconds beyond the maximum voltage limit of the electrical system.
  • the generator current decays with the time constant of the exciter field, resulting in a maximum load dump time of a few 100 ms.
  • a rectifier may be formed of zener diodes, which act as current valves in normal operation and cause rectification, but in the special case load dump can also limit the occurring electrical overvoltages by the generator current via the Zener breakdown derived to ground instead of getting into the electrical system. This is called passive rectification and this type of voltage limiting is called clamping.
  • each diode is replaced by a power MOSFET having an intrinsic body diode antiparallel to its drain-to-source channel which functions as a diode rectifier without driving the gate of the MOSFET.
  • the MOSFET can be switched on just when the phase current is to flow through it, that is, the intrinsic diode of the MOSFET is short-circuited by its channel. In this way, compared to the passive rectifier, a significantly reduced forward voltage at the source-drain channel and thus the efficiency and the output of the generator is increased at low speeds.
  • MOSFETs is needed to actually switch at zero crossing to avoid generating additional ripple of the rectified output voltage.
  • both a rapid evaluation of the phase voltage and a sufficiently high gate drive current is required, that is to say the lowest possible triggering of the gate.
  • an evaluation circuit detects an electrical overvoltage at the positive pole of the active rectifier and short-circuits the connected phase electrically against the reference potential (ground) or against the plus pole of the active rectifier.
  • the phase short circuit is brought about at all other phases so that the generator no longer supplies any electrical power to the onboard power supply.
  • the switching operation for disabling / activating the phase short circuit is advantageously carried out slowly, ie with a large switching time.
  • Switch designates the transition between the states “conducting” and “non-conducting.”
  • “large switching time” or “slow switching” means a slow transition between the states “conducting” and “nonconducting”;
  • “Fast switching”, on the other hand, is a quick transition.
  • the present invention proposes a method for operating an active rectifier, a circuit arrangement and a computer program having the features of the independent patent claims.
  • An essential aspect of the present invention is that in a method for operating an active rectifier with a plurality of controllable semiconductor switching elements, in which a first drive mode and a second drive mode for driving the semiconductor switching elements and vice versa, the following steps a) to c) and / or d) to f) are carried out:
  • the semiconductor switching elements are driven with a first switching time and in the second driving mode with a second switching time, wherein the second switching time is greater than the first switching time.
  • MOSFETs each having a body diode are used as semiconductor switching elements, wherein a drain-source voltage of one of the semiconductor switching elements is used as the electrical operating voltage. This ensures that reliable and inexpensive components can be used to build the circuit. Furthermore, it is achieved that when switching to the first drive mode no electrical voltage spikes or burglaries are generated beyond a certain limit, since there is only a slight difference in the drain-source voltage between the case due to the energization of the body diode the drain-source channel is conductive to the case where the drain-source channel is nonconductive.
  • the value of the electrical operating voltage is between 0 volts and an electrical voltage which drops across the body diode. This ensures that the natural voltage limitation of the body diode is used, so that the circuit arrangement has a particularly simple structure without additional, additional components.
  • an output-side load shedding is detected at the rectifier, and the output side load shedding is changed from the first activation mode to the second activation mode. This ensures that a change is prevented at a wrong time, which would affect the functionality of the circuit.
  • a value of an electrical output variable of the rectifier is detected, the value with a
  • Threshold compared, and changed from the first drive mode in the second drive mode when the value is greater than the threshold value. This ensures that a load shedding is reliably detected in a particularly simple manner.
  • the electrical output is filtered to determine the value. This ensures that interference signals are eliminated from the measurement result, so that a change of the drive mode due to noise, which are superimposed on the measurement result, is avoided.
  • an output voltage is used as output variable. This ensures that an easily measurable and further processed measure is used.
  • Another aspect relates to a circuit arrangement with an active rectifier having a plurality of controllable semiconductor switching elements, wherein the semiconductor switching elements are operable in a first drive mode and in a second drive mode, wherein in the first drive mode, the semiconductor switching elements with a first switching time and in the second drive mode with a second switching time is greater, wherein the second switching time is greater than the first switching time, and wherein the circuit arrangement comprises a controller which is designed to perform all the steps of a method, as previously stated and will be explained further below.
  • computer programs are floppy disks, hard disks, flash memories, EEPROMs, CD-ROMs, DVDs, etc. It is also possible to download a program via computer networks (Internet, intranet, etc.).
  • the present invention extends to a machine-readable storage medium with a corresponding computer program stored thereon.
  • the computer program may have components which are designed to operate the circuit arrangement in accordance with the method. Further advantages and embodiments of the invention will become apparent from the description and the accompanying drawings.
  • FIG. 1 shows a vehicle electrical system with an active rectifier, a generator and a control device in a schematic partial representation
  • FIG. 2 shows a section of FIG. 1 in detail
  • FIG. 3 shows voltage profiles in a schematic representation
  • FIG. 4 shows a process flow in a schematic representation
  • FIG. 5 shows a section of FIG. 2 in detail during a method step
  • FIG. 6 shows a section of FIG. 2 in detail during a further method step
  • FIG. 7 shows a section of FIG. 2 in detail during a further method step
  • FIG. 8 shows a section of FIG. 2 in detail during a further method step.
  • a portion of a vehicle electrical system 12 such as e.g. an electrical system of a motor vehicle, shown schematically.
  • the section comprises a circuit arrangement 2 with an active rectifier 4, which is electrically conductively connected to a generator 10.
  • the active rectifier 4 is formed in the embodiment shown in Figure 1 as a ten-pulse bridge rectifier, which is designed for rectification of electrical three-phase current, which is provided in the present embodiment of the designed as a five-phase generator 10.
  • the active rectifier 4 has five half-bridges A to E in the present embodiment.
  • the half bridges A to E each have two semiconductor switching elements AH to EH and AL to EL.
  • the semiconductor switching elements AH to EH and AL to EL depending on a MOSFET.
  • each of the five half bridges A to E each has a high-side MOSFET and a low-side MOSFET. These are each incorporated into an upper branch H (highside) and a lower branch L (lowside) of the individual half-bridges A to E.
  • each half-bridge A to E each have a center tap M on each. Each center tap M is electrically connected to one of the five generator phases or the corresponding phase terminals U to Y, respectively.
  • the half bridges A to E are each connected at their ends to a DC voltage connection B + and a ground connection 26, for example battery poles and / or corresponding supply lines of the electrical system 12.
  • the phase terminals U to Y can be electrically low-resistance connected in accordance with a corresponding wiring of the active semiconductor switching elements AH to EH and AL to EL respectively with the DC voltage terminal B + or the ground terminal 26. If two or more phase connections U to Y are each connected to the same DC voltage connection B + or
  • Mass connection 26 connected, this comes a short-circuiting of these phase terminals U to Y via the respective DC voltage terminal B + or ground terminal 26 equal.
  • the controller 6 with the gate terminals G via control lines (not shown) may be electrically connected.
  • the controller 6 is provided for all half-bridges A to E together.
  • each of the half bridges A to E may have an individual control. If the latter is the case, functions can be distributed as desired between individual controllers and the common controller 6.
  • the normal operation of the generator 10 includes driving the semiconductor switching elements AH to EH and AL to EL such that at the phase terminals U to
  • Y adjacent electrical current signals are alternately turned on after the Gleichanspan- connection B + and the ground terminal 26, as basically known. A load shedding and a sudden reduction of the im
  • Vehicle electrical system 12 required electric power can be detected in an arrangement shown in Figure 1, for example, based on an applied voltage at the DC voltage terminal B +.
  • the control device 6 is connected via an electrical line 8 to the DC voltage connection B +.
  • Rectifier 4 for example, a value of an electrical voltage at the DC voltage terminal B +, a threshold, there is a load shedding.
  • the activation of the active rectifier 4 during a detected load shedding may include short-circuiting the phase connections U to Y with the DC voltage connection B + or the ground connection 26 for a limited time. As a result, the electrical current fed into the vehicle electrical system 12 drops to zero, and an electrical voltage detected via the line 8 drops.
  • Short circuit can be produced by a simultaneous driving and thus Leitend terminate some or all semiconductor switching elements AH to EH on the one hand or AL to EL on the other hand, ie some or all of the semiconductor switching elements of a rectifier branch H or L. If an electrical operating variable of the active rectifier 4, e.g. a value of an electric voltage on
  • FIG. 2 shows a section of the circuit arrangement 2 shown in FIG. 1 for rectifying one of the phases U to Y.
  • the circuit arrangement 2 illustrated in FIG. 1 has the section shown in FIG. 2 for each of the phases U to Y.
  • FIG. 2 relates to the present exemplary embodiment, in which the phase short circuit is made to the ground connection 26.
  • a second sub-controller 16 can switch between the first driving mode M1 and the second driving mode M2, but not a first sub-controller 14 of the controller 6.
  • FIG. 2 shows that, in the present exemplary embodiment, the controller 6 is assigned, in addition to the first sub-controller 14, the second sub-controller 16.
  • the first sub-controller 14 has its output side electrically connected to the gate connection G for driving the semiconductor switching elements AH to EH in the upper branch (highside).
  • the second sub-controller 16 has a driver 18, a switchable impedance 20 for the second, high-resistance drive mode M2 (HiZ mode), a current source 22 and a clamp element 24 formed, for example, as a zener diode.
  • the low-impedance driver 18 is electrically conductively connected to the source terminal of the semiconductor switching element AL to EL.
  • the switchable impedance 20 is electrically connected.
  • the second sub-controller 16 for driving the semiconductor switching element AL to EL in the lower branch (lowside) is electrically conductively connected to the gate terminal G.
  • the clamping element 24 serves to limit the voltage at the gate G of the associated semiconductor switching element AL to EL to values which are uncritical for the semiconductor switching element AL to EL.
  • the first sub-controller 14 between the gate terminal G of the semiconductor switching element AH to EH and the center tap M of the respective associated phase only a driver (not shown) with low internal resistance analogous to the driver 18 in the second sub-controller 16 and a clamping element (not shown) analogous to the clamping element 24 in the second part control 16.
  • FIG. 3 shows the electrical voltage U A at the bias voltage connection B + of the active rectifier 4 and an alternating electrical voltage U of one of the phases U to Y with a trapezoidal profile, which is rectified by the rectifier 4. Furthermore, the sequence of the positive and negative half-waves of the essentially sinusoidal generator current I PH of the same phase is given by way of example. It can be seen from FIG. 3 that in the time period t0 to t500 the considered phase of the circuit arrangement 2 is operated with the active rectifier 4 in a first drive mode M1, while in the time period t500 to t700 the considered phase of the circuit arrangement 2 with the active phase Rectifier 4 is operated in a second drive mode M2.
  • the considered phase of the circuit arrangement 2 with the active rectifier 4 is again operated in the first activation mode M1 until the condition for the activation mode M2 is present again.
  • the other phases have a phase shift with respect to the phase in question, but behave analogously to the phase under consideration, taking into account their phase position and with regard to the criteria for the transition between the drive modes M1 and M2. Explicitly, this means that they ideally switch from drive mode M1 to drive mode M2 at the same time t500.
  • the recognition, evaluation and implementation of the criteria for entering and leaving the phase short circuit ideally also occur at the same times t500 and t3.
  • the change from the drive mode M2 back to the drive mode M1 depends, as described below, on the phase position and therefore takes place with a time offset to the considered phase.
  • the semiconductor switching elements AH to EH and AL to EL are driven with a first switching time
  • the semiconductor switching elements AL to EL are driven with a second switching time, wherein the second switching time is greater than the first switching time.
  • the operation is performed in the first drive mode M1 during an active rectifier operation, while the
  • the switching elements are correspondingly denoted by XH and XL, the center tap by MX and a voltage by UX
  • the semiconductor switching element XH in the upper branch and the semiconductor switching element XL in the lower branch are ideally in a state in which the drain-source channel is the drain -Source-stretch D - S is not electrically conductive (see Figure 5).
  • the negative half cycle of the alternating electrical voltage UX is present at the center tap MX.
  • the semiconductor switching element XL in the lower branch is controlled by the second sub-controller 16 in such a way that the drain-source
  • Channel of the drain-source path D - S is electrically conductive, while the semiconductor switching element XH is driven in the upper branch of the first sub-controller 14 such that the drain-source channel of the drain-source path D - S is electrically non-conductive (see Figure 7).
  • An electric current flows through the semiconductor switching element XL in the lower branch depending on the polarity of the voltage applied to the center tap M voltage UX. Thus, there is an active rectifier operation.
  • the semiconductor switching element XH in the upper branch and the semiconductor switching element XL in the lower branch are ideally in a state in which the drain-source channel is the drain -Source distance D - S is electrically non-conductive (see Figure 5). From the time t1 (see Figure 3) is the positive half-wave of the electrical
  • the semiconductor switching element XH in the upper branch is controlled by the first sub-controller 14 such that the drain-source path D-S is electrically conductive, while the semiconductor switching element XL in the lower branch is controlled by the second sub-controller 16 is controlled such that the drain
  • Source channel of the drain-source path D -S is electrically non-conductive (see Figure 6).
  • An electric current flows through the semiconductor switching element XH in the upper branch as a function of the polarity of the middle tap MX. lying electrical voltage UX. Thus, there is an active rectifier operation.
  • a value of an electrical output of the rectifier 4 is detected. This value is compared with a threshold value and changed in a step 500 (see FIG. 4) from the first activation mode M1 to the second activation mode M2 if the value is greater than the threshold value. It is understood by detecting and comparing that constantly
  • Values are recorded and compared continuously with a reference value. It is provided according to the present embodiment, that the electrical output is filtered to determine the value, with disturbances are filtered out.
  • the electrical output quantity in the present exemplary embodiment is one at the DC voltage connection
  • the changeover from the first activation mode M1 into the second activation mode M2 takes place in two partial steps according to one exemplary embodiment.
  • all semiconductor switching elements AH to EH in the upper branch are controlled by the first sub-controller 14 in such a way that the drain-source channel of the drain-source path D-S is electrically nonconductive.
  • the switchable impedance 20 is brought from the low-impedance to the high-impedance state.
  • the semiconductor switching elements AL to EL in the lower branch are then slowly driven by the second subcontroller 16 by means of the current source 22 in such a way that the drain-source channel of the drain-source path D-S slowly becomes electrically conductive (final state see FIG FIG. 7).
  • step 600 in which, in a first stage, the semiconductor switching element XH in the upper branch is controlled by the first sub-controller 14 in such a way that the drain-source channel of the drain-source path D - S remains electrically non-conductive as long as U ⁇ U A , while the drain-source channel of the drain-source path D - S of the semiconductor switching element XL in the lower branch of the current source 22 of the second sub-controller 16 is driven such that they electrically non-conductive (see Figure 8) is.
  • the semiconductor switching element XL in the lower branch is driven in accordance with the second drive mode M2, that is to say with the second, larger switching time in order to reduce or completely avoid electrical voltage peaks occurring due to inductances.
  • the value of the drain-source voltage UX and thus the voltage at the center tap MX changes. If the drain-source voltage U exceeds the voltage U A at the DC voltage terminal B +, the semiconductor switching element XH in the upper branch is controlled by the first sub-controller 14 such that the drain-source channel of the drain-source path D - S becomes electrically conductive becomes.
  • an electric current flows from the center tap MX of the considered phase through the semiconductor switching element XH to the DC voltage terminal B + until the electric current changes direction and the body diode 28 of the semiconductor switching element XL is energized in the lower branch.
  • the semiconductor switching element XL in the upper branch by the first part of control 14 is driven accordingly.
  • detection and evaluation of the electrical output voltage U A instead of the detection and evaluation of the electrical output voltage U A , detection and evaluation of the drain-source voltage of the high-side semiconductor switching element AH to EH can take place in order to initiate the release of the phase short circuit.
  • a value of an electric duty of the semiconductor switching element AL to EL is detected, and the value is compared with a comparison value. If the value is greater than the comparison value, is changed from the second drive mode M2 in the first drive mode M1.
  • an electrical voltage U D is used as the electrical operating variable.
  • a source-drain voltage of the semiconductor switching element AL to EL is used as the electrical voltage U D , in which it is at non-conductive drain-source channel to the voltage drop across the body diode 28 electric voltage U D acts. This is a positive electrical voltage in the event that the current flows from source to drain. The value of this voltage is greater than the value of the voltage which sets when the drain-source channel and current flow from source to drain.
  • the comparison value of the electrical voltage is above the highest value of the voltage which is established when the drain-source channel is conducting and the source-to-drain maximum current. It is also a positive electrical voltage.
  • the semiconductor switching element XL is driven in the lower branch by the second sub-controller 16 as in step 200 of the driving mode M1 in the period between tO and t1 such that the drain-source Channel of the drain-source path D - S is electrically conductive, while the semiconductor switching element XH is driven in the upper branch of the first sub-controller 14 such that the drain-source channel of the drain-source path D - S electrically non-conductive is.
  • the state shown in Figure 6 is reached again.
  • Another embodiment differs from the one just described in that the semiconductor switching element AH to EH in the upper branch of the first sub-controller 14 in the period between t3 and t700 are not so adapted. is controlled so that the drain-source channel of the drain-source path D - S becomes electrically conductive when U> U A. In this case, with a corresponding phase position, an electric current flows from the middle tap M of the considered phase through the body diode 28 of the semiconductor switching element AH to EH to the DC voltage connection B +.
  • a control of the semiconductor switching element AH to EH in the upper branch by the first sub-controller 14 such that the drain-source path D - S becomes electrically conductive, is possible only after return to the drive mode M1 and then in the described for the active rectification Kind done.
  • the phase short circuit is made against the DC voltage terminal B + of the active rectifier 4.
  • the first sub-controller 14 can be switched between the driving modes M1 and M2; however, the second part control 16 is not.
  • the sub-controller 16 in this case comprises the components and circuitry of the sub-controller 14 of the embodiment in which the phase short is performed to the ground terminal 26 and vice versa.
  • the criterion for changing over from the activation mode M1 to the activation mode M2 and for deactivating / activating the phase connection remain unchanged as well as the electrical connection of the partial controller 14 to the semiconductor switching element AH to EH and the partial controller 16 to the semiconductor switching element AL to EL.
  • the criterion for the change from the drive mode M2 to the drive mode M1 is modified such that the electrical voltage U is compared with the electrical output voltage U A and the
  • Transition occurs when electrical voltage U exceeds the electrical output voltage U A at least by a comparison value which is greater than the maximum value of the voltage which is established in the case of conducting drain-source channel and current flow from source to drain in the semiconductor switching element AH to EH ,
  • one of the detection and evaluation tion of the drain-source voltage of the lowside semiconductor switching element AL to EL done to initiate the release of the phase short at time t3.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

L'invention concerne un procédé de fonctionnement d'un redresseur actif (4) comprenant une pluralité d'éléments de commutation à semi-conducteur (AH‑EH, AL‑EL) commandables, dans lequel on passe d'un premier mode de commande (M1) à un deuxième mode de commande (M2) et inversement pour commander les éléments de commutation à semi-conducteur (AH‑EH, AL‑EL). Les éléments de commutation à semi-conducteur (AH‑EH, AL‑EL) sont commandés avec une première durée de commutation dans le premier mode de commande (M1) et avec une deuxième durée de commutation dans le deuxième mode de commande (M2), la deuxième durée de commutation étant plus grande que la première. Le procédé comprend les étapes a) à c) et/ou d) à f) suivantes : a) acquisition d'une valeur d'une grandeur électrique de sortie du redresseur, b) comparaison de la valeur de cette grandeur de sortie à une valeur de comparaison, c) passage du premier mode de commande (M1) au deuxième mode de commande (M2) lorsque la valeur de la grandeur de sortie est supérieure à la valeur de comparaison, d) acquisition d'une valeur d'une grandeur électrique de fonctionnement d'un des éléments de commutation à semi-conducteur (AH‑EH, AL‑EL), e) comparaison de la valeur de cette grandeur de fonctionnement à une valeur de comparaison, f) passage du deuxième mode de commande (M2) au premier mode de commande (M1) lorsque la valeur de la grandeur de fonctionnement est supérieure à la valeur de comparaison. L'invention concerne en outre un ensemble de circuits (2) et un logiciel correspondants.
EP14815748.0A 2014-01-09 2014-12-19 Procédé de fonctionnement d'un redresseur actif, ensemble de circuits et logiciel Withdrawn EP3092706A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014200166 2014-01-09
DE102014200503.5A DE102014200503A1 (de) 2014-01-09 2014-01-14 Verfahren zum Betreiben eines aktiven Gleichrichters, Schaltungsanordnung und Computerprogramm
PCT/EP2014/078746 WO2015104174A1 (fr) 2014-01-09 2014-12-19 Procédé de fonctionnement d'un redresseur actif, ensemble de circuits et logiciel

Publications (1)

Publication Number Publication Date
EP3092706A1 true EP3092706A1 (fr) 2016-11-16

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US (1) US9893645B2 (fr)
EP (1) EP3092706A1 (fr)
CN (1) CN105874693B (fr)
DE (1) DE102014200503A1 (fr)
WO (1) WO2015104174A1 (fr)

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DE102013224106A1 (de) * 2013-11-26 2015-05-28 Robert Bosch Gmbh Überspannungsschutz für Kraftfahrzeugbordnetz bei Lastabwurf
DE102014200503A1 (de) * 2014-01-09 2015-07-09 Robert Bosch Gmbh Verfahren zum Betreiben eines aktiven Gleichrichters, Schaltungsanordnung und Computerprogramm
DE102015202437A1 (de) * 2015-02-11 2016-08-11 Robert Bosch Gmbh Verfahren zum Betreiben eines an eine elektrische Maschine angeschlossenen aktiven Umrichters und Mittel zu dessen Implementierung
DE102019208122A1 (de) * 2019-06-04 2020-12-10 Audi Ag Verfahren zum Betrieb einer elektrischen Schaltung, elektrische Schaltung und Kraftfahrzeug

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US20160329827A1 (en) 2016-11-10
DE102014200503A1 (de) 2015-07-09
US9893645B2 (en) 2018-02-13
CN105874693B (zh) 2019-04-09
WO2015104174A1 (fr) 2015-07-16
CN105874693A (zh) 2016-08-17

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