EP2992407A4 - Mehrstufige maskenschaltkreisherstellung und mehrschichtiger schaltkreis - Google Patents

Mehrstufige maskenschaltkreisherstellung und mehrschichtiger schaltkreis Download PDF

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Publication number
EP2992407A4
EP2992407A4 EP13883471.8A EP13883471A EP2992407A4 EP 2992407 A4 EP2992407 A4 EP 2992407A4 EP 13883471 A EP13883471 A EP 13883471A EP 2992407 A4 EP2992407 A4 EP 2992407A4
Authority
EP
European Patent Office
Prior art keywords
circuit
fabrication
multilevel mask
multilayer
multilayer circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13883471.8A
Other languages
English (en)
French (fr)
Other versions
EP2992407A1 (de
EP2992407B1 (de
Inventor
Ping Mei
Carl P. Taussig
Marcia ALMANZA-WORKMAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP2992407A1 publication Critical patent/EP2992407A1/de
Publication of EP2992407A4 publication Critical patent/EP2992407A4/de
Application granted granted Critical
Publication of EP2992407B1 publication Critical patent/EP2992407B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0448Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/71Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43Layouts of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/483Interconnections over air gaps, e.g. air bridges
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Geometry (AREA)
EP13883471.8A 2013-04-30 2013-04-30 Mehrstufige maskenschaltkreisherstellung und mehrschichtiger schaltkreis Active EP2992407B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2013/038763 WO2014178835A1 (en) 2013-04-30 2013-04-30 Multilevel mask circuit fabrication and multilayer circuit

Publications (3)

Publication Number Publication Date
EP2992407A1 EP2992407A1 (de) 2016-03-09
EP2992407A4 true EP2992407A4 (de) 2017-03-22
EP2992407B1 EP2992407B1 (de) 2019-09-04

Family

ID=51843807

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13883471.8A Active EP2992407B1 (de) 2013-04-30 2013-04-30 Mehrstufige maskenschaltkreisherstellung und mehrschichtiger schaltkreis

Country Status (7)

Country Link
US (1) US9583387B2 (de)
EP (1) EP2992407B1 (de)
JP (1) JP6370883B2 (de)
KR (1) KR102069083B1 (de)
CN (1) CN105431797B (de)
TW (1) TWI529786B (de)
WO (1) WO2014178835A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10061414B2 (en) 2014-10-22 2018-08-28 Lg Innotek Co., Ltd. Touch panel
CN104331205B (zh) * 2014-11-25 2018-10-30 上海天马微电子有限公司 触控显示装置和电子设备
TWI607354B (zh) * 2015-01-07 2017-12-01 群創光電股份有限公司 觸控感測裝置及其製造方法
EP3136446A1 (de) 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft-vorrichtung und herstellungsverfahren
US10698547B2 (en) * 2018-08-06 2020-06-30 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Touch panel and organic light emitting diode display panel
US10741454B2 (en) * 2018-08-09 2020-08-11 International Business Machines Corporation Boundary protection for CMOS multi-threshold voltage devices
KR20210091382A (ko) * 2020-01-13 2021-07-22 삼성디스플레이 주식회사 마스크, 이의 제조 방법, 및 표시 패널 제조 방법
US20250349721A1 (en) * 2024-05-10 2025-11-13 Samsung Electronics Co., Ltd. Semiconductor device including interconnect structure with metal jump structure connecting adjacent metal lines

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100308336A1 (en) * 2005-12-29 2010-12-09 Hye Sun Lee Array substrate for liquid crystal display device and manufacturing method thereof
US20110205168A1 (en) * 2010-02-22 2011-08-25 Samsung Mobile Display Co., Ltd. Touch screen panel and fabricating method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07241690A (ja) * 1994-03-07 1995-09-19 Hitachi Ltd レーザ加工用誘電体マスクとその製造方法
JPH08255736A (ja) * 1995-03-16 1996-10-01 Hitachi Ltd パターン形成方法およびレジスト塗布装置
US5821169A (en) * 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
WO1999005788A1 (en) * 1997-07-28 1999-02-04 Kabushiki Kaisha Toshiba Surface acoustic wave device and method of producing the same
GB0013473D0 (en) * 2000-06-03 2000-07-26 Univ Liverpool A method of electronic component fabrication and an electronic component
US7344942B2 (en) * 2005-01-26 2008-03-18 Micron Technology, Inc. Isolation regions for semiconductor devices and their formation
US20110134050A1 (en) * 2009-12-07 2011-06-09 Harley Jonah A Fabrication of touch sensor panel using laser ablation
KR101048948B1 (ko) * 2010-02-22 2011-07-12 삼성모바일디스플레이주식회사 터치 스크린 패널의 제조방법
KR101603737B1 (ko) * 2010-05-11 2016-03-16 삼성전자주식회사 기상 세정을 이용한 금속 잔류물 제거 방법, 도전막 패턴의 형성 방법, 반도체 소자의 제조 방법 및 관련 설비
JP2012033776A (ja) * 2010-07-30 2012-02-16 Brother Ind Ltd 積層基板およびその製造方法
CN102681714B (zh) * 2011-10-10 2015-04-29 京东方科技集团股份有限公司 触摸感应器的制造方法及显示设备
US20130100145A1 (en) * 2011-10-21 2013-04-25 Qualcomm Mems Technologies, Inc. Electromechanical systems device
TWI472998B (zh) * 2012-10-09 2015-02-11 Au Optronics Corp 觸控裝置的製作方法
KR102017155B1 (ko) * 2012-11-01 2019-09-03 삼성디스플레이 주식회사 터치스크린 패널 및 그의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100308336A1 (en) * 2005-12-29 2010-12-09 Hye Sun Lee Array substrate for liquid crystal display device and manufacturing method thereof
US20110205168A1 (en) * 2010-02-22 2011-08-25 Samsung Mobile Display Co., Ltd. Touch screen panel and fabricating method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014178835A1 *

Also Published As

Publication number Publication date
CN105431797A (zh) 2016-03-23
KR102069083B1 (ko) 2020-01-22
EP2992407A1 (de) 2016-03-09
CN105431797B (zh) 2019-01-15
US9583387B2 (en) 2017-02-28
WO2014178835A1 (en) 2014-11-06
JP6370883B2 (ja) 2018-08-08
JP2016522930A (ja) 2016-08-04
EP2992407B1 (de) 2019-09-04
TWI529786B (zh) 2016-04-11
TW201447993A (zh) 2014-12-16
KR20160003207A (ko) 2016-01-08
US20160111328A1 (en) 2016-04-21

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