Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B81—MICROSTRUCTURAL TECHNOLOGY
  • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
  • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
  • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
  • B81C1/00523—Etching material
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
  • B23K26/1462—Nozzles; Features related to nozzles
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/36—Removing material
  • B23K26/361—Removing material for deburring or mechanical trimming
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow

Definitions

• Embodiments of the present invention are generally related to machining of various surfaces. Specifically, embodiments of the present invention relate to using gas-plasma generated using laser energy to machine a surface a substrate.
• laser energy is used to breakdown a gas to form a reactive gas-plasma cloud in the vicinity of the substrate. The substrate is then brought in contact with the gas-plasma cloud in order to machine the desired portion of the substrate.
• Some embodiment of the present invention provide a method for removing material from a substrate.
• the method includes providing a substrate that has a first surface and an opposing second surface.
• the method further includes focusing a laser beam at a focus point located at a predetermined distance from the first surface and providing a gas at or near the focus point.
• the method includes generating gas plasma by breaking down the gas using energy provided by the laser beam and exposing a portion of the first surface to the gas pl asma.
• the method includes removing material from the portion of the first substrate.
• the focus point is located in front of the first surface and the predetermined distance is between 3 mm and 10 mm.
• the gas plasma may propagate in a direction away from the focus point and the first surface.
• the gas comprises one of: air, Nitrogen, Argon, Hydrogen, Hydrogen Fluoride (HF), or Carbon
• exposing the portion of the first surface may further include moving the substrate such that the substrate is disposed an angle to an axis of the laser beam; and moving the substrate such that the portion of the substrate is in physical contact with the gas plasma when the substrate is disposed at the angle.
• the angle is less than 20 degrees.
• the half-life of the gas plasma is in range of betwee 10 ⁇ 8 and 100 fxs. The lifetime of the plasma depends on gas density (pressure), volume of the plasma, and degree of ionization of the gas. Molecular recombination events occur at a greater rate in denser plasma clouds. Cooling of plasma occurs by expansion, conduction, convection along with ionization recombination. A big volume may take longer to reach a lower average density than a small volume.
• Certain embodiments of the present invention provide a system.
• the system includes a laser source configured to generate a laser beam, a focusing lens disposed in the path of the laser beam and configured to focus the laser beam at a focus point, a gas source configured to deliver a gas at or near the focus point, and a substrate having a first surface and an opposing second surface.
• the substrate may be disposed such that the first surface is located a first distance from the focus point, wherein the focus point is located between the focusing lens and the substrate.
• the system is operable to generate gas plasma in the vicinity of the focus point.
• the gas plasma propagates in a direction along the path of the laser beam and away or opposite from the direction of beam propagation.
• the system can further enable movement of the substrate to expose a portion of the substrate to the gas plasma and remove material from the portion of the substrate using the gas plasma.
• the laser source includes a YAG laser and the gas includes one of air, Nitrogen, Argon, Hydrogen, Hydrogen Fluoride (HF), or Carbon Tetrafkmride (CF4).
• the substrate can include one of: fused-silica, metal, or ceramic, in some embodiments, first distance is between 3 mm and 10 mm and the substrate may be disposed at an angle with respect to the path of the laser beam. In a particular embodiment, the angle is less than 20 degrees.
• the system may also include a nozzle.
• the nozzle may be disposed between the focusing lens and the substrate such that the focus point is located within the nozzle.
• the gas source is coupled to the nozzle and is capable of providing the gas having a flow rate of between 5 L/min and 20 L min.
• the system may use residual gas left over after generation of the gas plasma to propagate the gas plasma towards the substrate.
• the nozzle can act to obstruct the diverging light of the laser beam and reduce exposure of the surface to the incoming beam.
• a yet another embodiment of the present invention provides another method for removing material from a substrate.
• the method includes providing a substrate having a first surface and an opposing second surface and focusing a laser beam at a focus point located at a first distance from the second surface of the substrate.
• the laser beam passes through the substrate after impinging on the first substrate.
• the method further includes providing a gas at or near the focus point and generating gas plasma by breaking down the gas using energy from the laser beam.
• the gas plasma is oriented away from the focus point and towards the second surface of the substrate.
• the method also includes moving the substrate to expose a portion of the second surface to the gas plasma and removing material from the portion of the second surface.
• FIG. 1 is high-level block diagram of a system for removing material from a substrate according to an embodiment of the present inven tion.
• Fig. 2 illustrates the beneficial effects of using embodiments of the present invention.
• Fig, 3 i llustrates the effect of techniques disclosed herein on rim height and pitting rate.
• Fig, 4 is a functional block diagram of a first embodiment of the presnet invention.
• Fig. 5 is a functional block diagram of a second embodiment of the presnet invention.
• FIG. 6 is a functional block diagram of a third embodiment of the presnet invention.
• Fig. 6A is a schematic illustrating the beam shaping according to an embodiment of the present invention.
• Fig. 6B illustrates cross-sections of a conventional laser beam and and a laser beam modified according to an embodiment of the present invention.
• Fig. 7 is a functional block diagram of a fourth embodiment of the presnet invention.
• Fig. 8 illustrates results of etching a substrate using an embodiment of the present invention.
• Fig. 9 is a flow diagram of a process for removing material from a substrate according to an embodiment of the present invention.
• Fig. 10 is a flow diagram of a process for removing materia! from a substrate according to another embodiment of the present invention.
• Embodiments of the present invetion generally relate to laser-based machining of substrates. It is to be noted that many types of substrates can be machined using the techniques described herein. However, a fused-silica based optical compoent is used as an example throughout the specifciation to explain the various embodiments of the present invention.
• Gas-plasma laser machining techniques as described herein can impact the surface finish/roughness/quality, by melting, flow, or surface molecular relaxation, even without any significant evaporation (for the duration of the heating).
• the surface finish, roughness effect can occur because of (a) modification of the surface chemistiy and therefore of the interfacial energy, e.g., the tendency for a rough surface to flatten out is greater for greater interfacial energies, (b) modification of the temperature dependence of the interfacial energy driving the Marangoni flow, and (c) lowering evaporation temperature thereby increasing viscosity and reducing material flow, thus reducing rim formation.
• Lasers can be used for various machining activities such as drilling, cutting, removing coating of one material from another material, marking/engraving, surface finishing/smoothing, etc.
• Embodiments of the present invention relate to using gas-plasma generated using a laser to remo ve material from a surface of a substrate.
• embodiments of the present invention may be used in melting, flowing, or surface finishing of material without removal of material.
• the techniques disclosed herein are applicable to any other applications of laser machining.
• embodiments of the present invention are described using fused-silica based optics components.
• One skilled in the art will realize that the techniques disclosed herein are equal ly applicable to laser machining of metals, ceramics, and other types of material.
• Silica is used in many industrial applications such as raw material in refractory linings, fiber optics, optical substrates and, in general, as a component in devices requiring inertness and toughness.
• silica is difficult to process. High temperatures above the glass working point ( ⁇ 2400 ° ) are used for molding of fused silica, while very reactive species are needed for chemical etching of silica.
• many of silica's processing properties depend greatly on temperature.
• evaporative etching of silica uses extreme temperatures approaching the boiling point of silica, e.g., 3000 °K. Such temperatures are not practical for machining under ambient conditions.
• the laser- generated gas-plasma is used for material removal without the laser directly incident on the substrate surface.
• thermocapillary flow and residual stress because fused silica is highly inert even under reactive gas atmospheres, high evaporation temperatures around 28Q0K. are still required to remove and flo enough material over practical time scales. To lower the treatment temperature further below the glass transition point, extremely reactive gases, such as CF4 or HF, could potentially be used, However these gases are toxic and difficult to handle in processing facilities designed for large aperture optics.
• Embodiments of the present invention provide techniques in which an intense beam can ignite plasma in air with a high degree of ionization at the focus point of the laser.
• the gas- plasma thus formed can then displace or react with the silica surface to produce volatile species.
• Most of the laser energy can be coupled into the gas while leaving the surface un-affeeted, except for the plasma etching and, with a minimal thermal footprint to prevent rim formation.
• the temperature of the plasma cools off faster than the plasma decay.
• the gas-plasma is very reactive, it is also short-lived due to rapid ionic recombination at atmospheric pressures.
• the source of the plasma is chemically quenched well before propagating into the surrounding, making it safe for use as a localized etching gas.
• a gas e.g., air or N2
• Another advantage is that reduced laser energy is needed to evaporate/etch the material for a desired etch rate compared to conventional processes.
• techniques disclosed herein also help to reduce the amount of the apparent re-deposited material on the surface thus reducing structural and optical defects of the machined surface.
• using a gas-plasma that is generated away from the surface of the substrate results in reduction or even elimination of rim formations and curvatures due to Maraiigoni flow at the heated site edges. This helps to preserve a flatter surface with fewer features that can act to intensify propagated Sight when the material is used to steer light in optical applications. Similar surface topology and process improvements can be obtained for other materials such as metals, ceramics, etc.
• Gas-plasma generated using embodiments described herein are highly reactive without requiring thermal decomposition of the material on the substrate for material removal, Such gas-plamsa is also safer because of its short lifetime compare to aggressive and toxic gases like Hydrogen Fluoride (HF).
• HF Hydrogen Fluoride
• Fig. 1 is a high-level block diagram of a system 100 for performing the laser induced gas-plasma machining process according to an embodiment of the present invention.
• System. 100 includes a laser source 102 that can output a laser beam 104.
• Laser source can include any conventional laser source, in a particular embodiment, a YAG laser operating at 3 watts and having a wavelength of about 355 nanometers can be used.
• Laser beam 104 can pass through a focusing lens 108 to focus at point 1 16. In some embodiments, the beam diameter is about 10 micrometers and the focal length of lens 108 is about 50 millimeter.
• a gas e.g., air or Nitrogen, can be provided at or near focus point 1 16. As illustrated in Fig.
• a gas source 114 can provide the desired gas via flow control mechanism 112.
• laser beam 104 can break down the gas to form gas-plasma 1 10.
• Gas plasma 1 10 is formed such that a majority of the gas-plasma is directed away from the focus point towards lens 108.
• the laser energy needed to generate the gas plasma depends on several factors including primarily on the type of gas. In one embodiment, the laser energy may be between 20 and 50 mJ.
• Lase source 102 can be operated to provide a series of short duration laser pulses with a repetition frequency of between 10 Hz and 100 Hz and having a pulse duration of about 7- 10 nanoseconds.
• Substrate 106 that is to be machined can be brought in contact with gas-plasma 1 10 by translating substrate 106 in a horizontal, a vertical, and/or a radial direction as needed.
• the ionized species in the gas- plasma react with the surface material resulting in removal of surface material .
• laser beam 104 is not focused at the surface of substrate 106, the temperature at the surface of the substrate can be kept at a lower level to avoid the problems described above.
• the resulting gas-plasma has a life of less than 1 minute thus further limiting the exposure time of substrate 106 and reducing the damage that may be caused by the laser.
• the half-life of the gas-plasma is in the microsecond range.
• Fig. 2 is a graph showing the relationship between the temperature and surface profiles using various laser-based etching techniques. As can be seen from Fig.
• the gas-plasma etching as disclosed herein provides the most uniform surface profile over a surface of a substrate. Also, as is evident from Fig. 2, gas-plasma etching reduces the amount of rim that may be formed when the etching is performed.
• Fig. 3 illustrates the relationship between the rim height and pitting rate using conventional method and the gas-plasma etching described herein. As can be seen from Fig. 2, as the pitting rate increases so does the rim height for the conventional processes. Flowever using the gas-plasma etching technique disclosed herein, it can be seen that even with an increase in pitting rate (or etch rate), the rim height barely increases.
• Fig. 4 is a schematic representation of a first embodiment of the present invention.
• laser beam 104 is focused at a poin t 116 in front of surface 402 of substrate 106 to be machined.
• focus point 1 16 is located at distance of between 3 mm and 5 mm from the surface of the substrate.
• a gas is introduced in the vicinity of focus point 1 16. The energy from laser beam 104 breaks down the gas to form gas-plasma 110.
• Gas plasma 110 includes ionized species and free radicals generated by the gas breakdown.
• Gas-plasma 1 10 propagates backward from focus point 1 16 in the direction towards laser source 102.
• Substrate 106 can be moved laterally to bring a portion of surface 402 in contact with gas plasma 110.
• the ionized species and free radicals in the gas plasma react with the material on surface 402 to remove a portion of the material.
• the exposure time and location of the substrate can be controlled by movement of substrate 106 and/or operation of laser source 102 to get the desired results.
• the mechanism of breaking down a gas using a laser to generate plasma is well-known in the art and the description of that is not provided herein.
• substrate 106 can be mounted on a stage.
• the movement of the stage in various axes can be accomplished using any of the known conventional means of motion control.
• the details of the motion control mechanism are not provided herein since they are known in the art.
• the gas-plasma may cause damage to the surface due to plasma scalding.
• the laser beam itself may cause some surface damage. Depending on the material being machined such damage may or may not be acceptable.
• this embodiment is suitable for materials that can resist plasma-scalding.
• focus point 1 16 instead of moving the substrate, focus point 1 16 can be moved in order to move the gas ⁇ piasma closer or farther frorn the substrate.
• Fig. 5 illustrates a second embodiment of the present invention.
• laser beam 104 passes through substrate 106 and converges at a focus point 1 16 on the other side of substrate 106.
• Gas is provided at or near focus point 1 16 and gas-plasma 1 10 is generated, as described above.
• gas-plasma 1 10 projects backward from focus point 1 16 towards surface 502 of substrate 106.
• Substrate 106 can then be moved horizontally and/or vertically in order to expose a portion of surface 502 to gas-plasma 1 10.
• gas-plasma 110 may be generated at a distance of between 10 and .15 mm from, surface 502.
• Fig. 5 shows this clearly where gas-plasma 1 .10 propagates away from the focus point and towards the surface of the substrate.
• the gas plasma propagates away from the focus point and away from the surface 402 of the substrate. This prevents the laser beam from etching the surface and helps to use more of the gas plasma to perform the etching.
• This particular set-up may also suffer from the same issues as described above in reference to Fig. 4, but may be suitable in cases where material damage due to the laser is not an issue or in cases the material is such that the laser cannot damage the material at all.
• Fig. 6 illustrates a third embodiment of the present invention
• laser beam 104 converges inside a nozzle 602.
• a compressed gas is provided at or near focus point. 116 inside the nozzle to generate the gas plasma.
• gas-plasma 110 is pushed towards surface 402 of substrate 106 by the excess gas left over after generation of the gas- plasma.
• distance B is between 3 and 6 mm. Since the excess gas is being used to "push" gas plasma 110 towards surface 402 of substrate 106, there is minimal to no interaction between the laser beam and the substrate, thus significantly reducing the amount of damage that may be caused by the laser beam itself.
• the tip of nozzle 602 can be placed at a distance A of about 1 mm from surface 602.
• flow rate of the compressed gas can be between 5 L/rnin to about 20 L/min.
• the compressed gas that may be used can include air, Nitrogen, Argon, Hydrogen, or any other suitable reactive gas.
• the same energy of the laser beam can be used to generate the plasma at focus, yei most of the high intensity beam portion can be
• the line of sight of the laser beam is slightly off-center in order to avoid the laser beam from causing any damage to the substrate itself.
• beam shaping can further improve on that beam screening by, for ex., having the beam energy concentrated in a donuf shape, such that at the surface you get less exposure, but the sides of the beams are clipped, or is obstructed by the opening of the nozzle where the gas exits.
• Fig. 6A illustrates this aspect. As illustrated in Fig. 6A, the divergent light from laser beam 104 is blocked by the walls of nozzle 602 preventing the light from reachmg substrate 106 thus reducing the exposure of substrate 602 to laser beam 104.
• Beam shaping can further improve on that beam screening by, e.g., having the beam energy concentrated in a donui shape, such that at the surface you get less exposure, but the sides of the beams are clipped, or is obstructed by the opening of the nozzle where the gas exits.
• the same energy can be used to generate the plasma at focus, yet most of the high intensity beam portion can be obstructed/clipped by the nozzle walls when the beam diverges and propagates forward.
• only the portion near the axis of the beam passes through the nozzle opening reducing the surface exposure to the laser beam and the risk for surface damage.
• Fig. 7 illustrates a fourth embodiment of the present invention.
• substrate 106 instead of gas-plasma 1 10 being directly impinged on the substrate surface in a directional perpendicular to the substrate surface 402 (as in the embodiments of Figs. 4, 5, and 6), substrate 106 is held at an angle 702 compared to the gas plasma.
• the gas-plasma is generated similar to all the previous embodiments described above. However, since the substrate is held at an angle to the gas-plasma there is no interaction between the laser beam itself and the surface of the substrate. In a particular embodiment, angle 702 between surface 402 of the substrate and the axis of the laser beam is less than 20 degrees.
• the gas-plasma in this embodiment glances or grazes the surface of the substrate, a uniform and more precise etching of the substrate surface and can be achieved by moving substrate 106 as needed.
• the laser beam is focused away from the surface of the substrate, the potential damage caused by the laser beam can be minimized or eliminated.
• the surface temperature of the substrate can reach between 2000 and 2500 Kel vin. This helps with reduced redeposit of material even if there is some melting of material on the surface of the substrate.
• Fig. 8 illustrates result of etching of substrate using embodiments of the present invention.
• Fig, 9 is a flow diagram of a process 900 for removing material from the surface of a substrate according to an embodiment of the present invention.
• Process 900 may be performed, e.g., by system 100 of Fig. 1.
• Process 900 begins at step 902 where a substrate to be etched is provided.
• the substrate can include a fused-silica based component, a metal, a ceramic, or any other material.
• a laser beam is focused at a predetermined distance from the surface of the substrate.
• the laser beam is focuses such that the laser beam does not reach the surface of the substrate but rather terminates at the focus point, in some embodiments, the predetermined distance is between 3 and 10 mm from the surface of the substrate.
• a gas is provided at or near the focus point of the laser.
• the gas may be chosen from a group consisting of air, Nitrogen, Hydrogen, HF, CF4, etc.
• the laser energy breaks down the gas at the focus point and generates a gas-plasma. The generated gas-plasma propagates in a directed away from the focus point and towards the source of the laser beam.
• the surface of the substrate is brought in contact with the gas-plasma either by moving the substrate or moving the gas-plasma.
• the gas-plasma can etch and remove the material at that portion, at step 912.
• the substrate can be oriented in an number ways compared to the gas-plasma.
• Fig. 9 provides a particular method of etching a surface according to an embodiment of the present invention. Other sequences of steps may also be performed according to alternative embodiments. For example, alternative embodiments of the present invention may perform the steps outlined above in a different order. Moreover, the individual steps illustrated in Fig. 9 may include multiple sub- steps that may be performed in various sequences as appropriate to the individual step.
• Fig. 10 is a flow diagram of a process 1000 for removing material from the surface of a substrate according to another embodiment of the present invention.
• Process 1000 begins at step 1002 where a substrate is provided.
• the substrate has a first surface and an opposing second surface.
• a laser beam is impinged on the first substrate.
• the laser beam passes through the substrate and is focused at a point located at a first distance from the second surface.
• a gas is provided at the focus point.
• gas plasma is generated by using the laser energy to breakdown the gas.
• the gas plasma includes free radicals that can react with the substrate material.
• the substrate is moved so as to enable contact between the gas plasma and a portion of the second surface.
• material is removed from the portion of the second surface.
• Fig. 10 provides a particular method of etching a surface according to an embodiment of the present invention. Other sequences of steps may also be performed according to alternative embodiments. For example, alternative embodiments of the present invention may perform the steps outlined above in a different order. Moreover, the individual steps illustrated in Fig. 10 may incl de multiple sub- steps that may be performed in various sequences as appropriate to the individual step.

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• Engineering & Computer Science (AREA)
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• Manufacturing & Machinery (AREA)
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• Surface Treatment Of Glass (AREA)
• ing And Chemical Polishing (AREA)
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• 2013
  • 2013-03-12 US US13/797,495 patent/US9790090B2/en active Active
• 2014
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