EP2954559A1 - Cellule solaire à multi-jonction, procédé de fabrication et utilisations - Google Patents

Cellule solaire à multi-jonction, procédé de fabrication et utilisations

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Publication number
EP2954559A1
EP2954559A1 EP14703396.3A EP14703396A EP2954559A1 EP 2954559 A1 EP2954559 A1 EP 2954559A1 EP 14703396 A EP14703396 A EP 14703396A EP 2954559 A1 EP2954559 A1 EP 2954559A1
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EP
European Patent Office
Prior art keywords
solar cell
subcell
multiple solar
cell according
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP14703396.3A
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German (de)
English (en)
Inventor
Frank Dimroth
Andreas W. Bett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Publication of EP2954559A1 publication Critical patent/EP2954559A1/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/041—Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • a multi-junction solar cell with at least three pn junctions, which contains a backside, having at least one pn junction subcell containing GaSb and a front side and at least two pn junctions having subcell and which is characterized in that the backside subcell a> 2 %, in particular> 4%, greater lattice constant than the front-side part cell and the two sub-cells are interconnected via an optically transparent and electrically conductive Wafer-Bond connection.
  • the multiple solar cell achieves high absorption to the bandgap energy of the lowermost GaSb-containing subcell and a photovoltage which is enhanced over prior art multiple solar cells.
  • the next generation of multiple solar cells will contain three, four or more pn junctions with the best possible bandgap combination to further increase efficiency.
  • the optimal bandgap energies for terrestrial applications are 1.9, 1.4, 1.0 and 0.5 eV. It is known that this combination on germanium is difficult to realize.
  • an alternative combination of 1.9, 1.4, 1.1 and 0.7 eV is only 3.5% relatively lower in average power and can be realized with different material combinations.
  • this type of quadruple solar cell is based on the conventional epitaxy of III-V multiple solar cells on germanium substrate.
  • the only change to the current state of the art is the integration of an additional subcell from the diluted nitrogen-containing material GalnNAs.
  • As an alternative to GalnNAs semiconductors such as GaNAsSb or BGalnAs can also be used.
  • the concentration of N or B is in the range of 2-4%.
  • III-V compounds can be produced which have a bandgap energy of 1.0 eV and can be grown lattice-matched to germanium.
  • the big problem with this approach is the material quality of the diluted N (or B) -containing materials.
  • germanium solar cells have a comparatively low no-load voltage, which is typically in the range of 260 mV for a sun
  • GalnP / GaAs / GalnAsP / GalnAs solar cell in this type of quadruple solar cell, one half of the structure is grown on gallium arsenide substrate and the other half on indium phosphide substrate. In principle, the desired band gaps of the materials can be achieved. In this concept, the top and bottom of the structure are joined via wafer bonding or mechanical stacking (see Bhusari, D. et al. (2011), Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Seattle, Washington, USA). , The disadvantage of this structure is that the lower part cell has to be grown on indium phosphide substrate. This substrate is extremely expensive (the cost is about 8-10 times higher compared to germanium and
  • Inverted grown GalnP / GaAs / GalnAs / GalnAs solar cell in this concept, all subcells are grown inverted on a gallium arsenide or germanium substrate. Thereafter, the structure is transferred to a substrate for stabilization, the gallium arsenide and germanium substrate are removed and the solar cell is processed (see Friedmann, DJ et al., 2006 Proceedings of the 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, USA Stan, M. et al. (2010) Journal of Crystal Growth, Vol. 312, pp. 1370-1374).
  • GalnAs The low bench-gap energies of GalnAs in the range of 1 eV and 0.7 eV require the growth of metamorphic buffer layers with a very high voltage. This results in numerous dislocations, which have a negative impact on the efficiency of the solar cell. It has also been found that the GalnAs material is used for space applications. less suitable, since the solar cells degrade faster under the irradiation with high-energy electrons and protons.
  • GalnP / GaAs / GalnAs / Ge solar cell here, a GalnP / GaAs tandem cell is first grown on gallium arsenide, then a GalnAs subcell and a metamorphic buffer structure grown on a germanium subcell, then both joined together in a wafer bonding process and the gallium arsenide Substrate removed. This results in a quadruple solar cell structure through the combination of growth on two substrates and wafer bonding.
  • the disadvantage of this structure is that the lowest subcell of germanium consists of an indirect semiconductor and thus the absorption for wavelengths greater than 1600 nm drops sharply.
  • germanium solar cells have a comparatively low no-load voltage, which is typically in the range of 260 mV for a sun (see DE 10 2012 004 734).
  • the object is achieved by the multiple solar cell according to claim 1, the method for producing a multi-junction solar cell according to one of claims 15 or 16 and the use of the multiple solar cell according to claim 18.
  • a multiple solar cell with at least three pn junctions comprising a backside, at least one pn junction having partial cell containing or consisting of GaSb and a front side and at least two pn junctions having subcell, characterized in that the backside subcell a> 2 %, in particular> 4%, greater lattice constant than the front-side part cell and the two sub-cells are interconnected via an optically transparent and electrically conductive Wafer-Bond connection.
  • Advantages of the multiple solar cell according to the invention are that it has a high absorption up to the band gap energy and a high photovoltage is achieved.
  • the multiple solar cell is preferably free of Ge, SiGe and / or Si.
  • gallium antimonide as part of a subcell has the advantage that it consists of elements that are widely distributed on the earth, which makes manufacturing economically feasible. It is also known that gallium antimonide solar cells achieve a significantly higher photovoltage compared to germanium solar cells with similar bandgap energy. For example, 349 mV for gallium antimonide were measured with a sun compared to 264 mV for germanium. It also offers
  • Gallium antimonide has the advantage that it is a direct semiconductor and thus ensures high absorption up to band gap energy. Furthermore, layers of GalnAsSb, which are even closer to the theoretically optimal band gap of 0.5 eV for the lowest subcell of a quadruple solar cell, can be realized on gallium antimonide substrate in a lattice-matched manner.
  • the front-side part cell has at least two pn junctions which contain or consist of AIGaAs and / or GaAs and / or AIGalnP and / or GalnP.
  • the front-side subcell may include a metamorphic buffer layer for changing the lattice constant and at least one pn junction containing GalnAs.
  • the metamorphic buffer layer preferably changes the lattice constant by 1.5% to 3%, in particular by 2% to 2.5%.
  • the metamorphic buffer layer may consist of AIGalnAs or GalnAs or GalnP or AIGalnP or GaPSb.
  • the front-side subcell is epitaxied on a GaAs or Ge wafer.
  • the front-side subcell can have at least three pn junctions, wherein at least two pn junctions contain or consist of AIGaAs and / or GaAs and / or AIGalnP and / or GalnP and the at least one further pn junction contains or consists of GalnAs, the both first and the further pn junction are connected via a metamorphic buffer which bridges a lattice constant difference between 1-5%, preferably between 2-4%.
  • the front-side subcell has three pn transitions with band gaps in the ranges 1.80-1.95 eV, 1.40-1.55 eV and 1.00-1.15 eV.
  • the backside subcell may have one or more pn junctions each having a bandgap energy of between 0.50-1.00 eV and each containing or consisting of GaSb or AIGaAsSb or GalnAsSb or GaPSb.
  • the backside subcell has two pn junctions, with a pn junction containing or consisting of GalnAsSb having a bandgap energy of between 0.50-0.72 eV.
  • the backside subcell may include a metamorphic buffer layer to adjust the lattice constant, the metamorphic buffer layer in particular being GalnAsSb, GalnAs, AIGalnAs, GaAsSb, AlAsSb, GaPSb, and / or AlPSb.
  • the metamorphic buffer layer in particular being GalnAsSb, GalnAs, AIGalnAs, GaAsSb, AlAsSb, GaPSb, and / or AlPSb.
  • the backside subcell is epitaxied on a GaSb wafer.
  • the individual subcells may have further functional layers, in particular tunnel diodes for the electrical connection of the individual subcells, barrier layers on the front and back of the subcells, highly doped contact layers, internal reflection layers and / or antireflection layers on the front side of the cell.
  • a tunnel diode for electrical serial connection can be included.
  • a backside subcell containing GaSb is grown;
  • a front-side subcell having at least two pn junctions of III-V compound semiconductors, wherein pn junctions with increasing bandgap energy sequentially follow;
  • step e) the carrier and the adhesive of step c) are removed;
  • the solar cell is provided with contacts and anti-reflection layer.
  • the surface of the back and front side sub-cells may be polished and / or cleaned.
  • a backside subcell containing GaSb is grown;
  • a front-side subcell having at least two pn junctions of III-V compound semiconductors, wherein pn junctions with decreasing bandgap energy sequentially follow;
  • the subcell structures of a) and b) are connected by wafer bonding; d) after wafer bonding, the substrate is removed from GaAs or Ge; e) the solar cell is provided with contacts and anti-reflection coating.
  • the surface of the back and the front part cell may be polished and / or cleaned.
  • the methods according to the invention for producing a multiple solar cell can be characterized in that the GaSb substrate of the backside partial cell is at least partially removed during processing and the structure is transferred to a support, preferably a support of silicon, AISi, carbon, Mo or other composites.
  • the multiple solar cell according to the invention can be used in space or in terrestrial concentrator systems.
  • FIG. 1 shows a variant of a triple-junction solar cell according to the invention.
  • a first, GaSb-containing subcell 2 having a first pn junction is epitaxially connected to a backside substrate 1 containing or consisting of GaSb. It may be a GaSb wafer or a thin GaSb layer deposited on a conductive support (eg, a GaSb layer on Si, AISi, carbon, Mo, or other composites).
  • the substrate 1 has a rear side contact 7.
  • the first subcell 2 is connected to two further subcell 3 and 4 via a wafer bond connection 6.
  • the wafer-bond connection can be carried out by direct semiconductor bonding, by bonding amorphous semiconductor layers or by bonding transparent conductive intermediate layers such as indium tin oxide.
  • the decisive factor here is that the compound is electrically conductive and optically transparent to the light which is absorbed in the lowermost GaSb-containing subcell 2.
  • the bond may be thermally baked.
  • the surfaces of the sub-cells can polished and / or cleaned before bonding to ensure a low surface roughness and low concentration of impurities and oxides.
  • the subcell 4 On the front side, the subcell 4 has an antireflection layer 5 and a plurality of front side contacts 8.
  • the front-side contact is typically formed as a contact finger structure, which is designed to balance the reflection of light on the metal fingers with resistance losses due to limited conductivity.
  • the subcells 2, 3 and 4 each have a pn or np junction.
  • the bandgap energy of the semiconductors of the sub-cells increases from 2 to 3 and from 3 to 4.
  • the sub-cells may have further functional layers such as barrier layers or tunnel diodes for serial interconnection.
  • the substrate 1 and the first subcell 2 together form the rear-side subcell 9 while the second subcell 3 and the third subcell 4 together form the front-side subcell 10.
  • the back and front subcell differ in their lattice constant and are optically and electrically connected to each other via the bond 6.
  • FIG. 2 shows a variant of a quadruple solar cell according to the invention.
  • the GaSb-containing subcell 2 has a backside contact 7 and a substrate 1 containing or consisting of GaSb. It may be a GaSb wafer or a thin GaSb layer deposited on a conductive support (eg, a GaSb layer on Si, AISi, carbon, Mo, or other composites).
  • the first pn-junction 2 consists for example of GaSb with a bandgap energy of 0.7 eV.
  • GalnAsSb with a bandgap energy between 0.5-0.7 eV can be chosen, whereby the bandgap at constant lattice constant of GaSb by the addition of indium and arsenic in
  • GalnAsSb can be lowered.
  • the first subcell 2 is connected via a wafer bond connection 6 to the second subcell 3 made of GalnAs.
  • the wafer-bond connection can be carried out by direct semiconductor bonding, by bonding amorphous semiconductor layers or by bonding transparent conductive intermediate layers such as indium tin oxide.
  • the decisive factor here is that the compound is electrically conductive and optically transparent for the Light which is absorbed in the lowest GaSb-containing subcell. To increase the strength, the bond may be thermally baked.
  • the bandgap of the second GalnAs subcell 3 can be adjusted over the indium content in the crystal in a wide range. In particular, band gaps between 0.9 and 1.2 eV, in particular between 1.0 and 1.1 eV, are advantageous.
  • a metamorphic buffer layer 11 in which the lattice constant of the crystal is changed.
  • the lattice constant of the crystal lattice can be varied stepwise or linearly.
  • the buffer layer contains misfit dislocations which relax the grid.
  • the buffer layer may further contain an excess layer for complete relaxation of the crystal lattice, or blocking layers of dilute N-containing materials. Typical materials for buffer layers are GalnAs, GalnP, AIGalnP, AIGalnAs, GaPSb and combinations thereof.
  • the third subcell 4 has a band gap energy of 1.4-1.5 eV and is advantageously made of GaAs, AIGaAs or GalnAsP.
  • the third subcell 4 is adjoined by a further fourth subcell 12, which has a band gap in the range 1.8 eV - 1.9 eV and advantageously consists of GalnP or AIGalnP.
  • the quadruple solar cell has an antireflection layer 5 and a plurality of front side contacts 8.
  • the front-side contact is typically formed as a contact finger structure, which is designed to balance the reflection of light on the metal fingers with resistance losses due to limited conductivity.
  • the subcells 2, 3, 4 and 12 each have a pn or np junction.
  • the bandgap energy of the semiconductors of the sub-cells increases from 2 to 3 to 4 to 12.
  • the substrate 1 and the first subcell 2 together form the rear subcell 9 while the second subcell 3, the metamorphic buffer layer 11 and the third and fourth subcell 4 and 12 together form the front side subcell 10.
  • the back and front subcell differ in their lattice constant and are optically and electrically connected to each other via the bond 6.
  • the sub-cells may have further functional layers such as barrier layers or tunnel diodes for serial interconnection.
  • barrier layers or tunnel diodes for serial interconnection.
  • FIG. 1 A detailed example of an advantageous layer structure of a quadruple solar cell according to the invention with barrier layers and tunnel diodes is shown in FIG.
  • the substrate 1 consists in this case of p-GaSb.
  • Subcell 2 contains a pn junction of GaSb and barrier layers of n-AIGaPSb and p-AIGaSb.
  • the subcell 3 has a pn junction in GalnAs and barrier layers of n
  • the subcell 4 has a pn junction in (Al) GaAs and barrier layers of n-AlIGalnP, p-AIGaAs, and p-AIGalnP.
  • Subcell 12 has a pn junction in GalnP and n-AllnP, p-GalnP, and p-AIGalnP barrier layers.
  • the structure also has a metamorphic buffer layer 11 from AIGalnAs.
  • the wafer bonding compound 6 is located between the backside subcell which ends with an n-AIGaPSb bonding layer and the frontal subcell which ends with an n ++ -GalnAsP layer of the tunnel diode.
  • the subcells are each connected via tunnel diodes.
  • the tunnel diode between subcell 2 and 3 consists of p-GalnAsP and n-GalnAsP, the tunnel diode between subcell 3 and 4 of p-AIGaAs and n-
  • the solar cell in FIG. 3 has on the front side of the partial cell 12 a GaAs cover layer, which remains only under the contacts in order to ensure a low contact resistance. Furthermore, a front contact, for example, Ni / AuGe or Pd / Ge / Au. The reflection on the front side of the solar cell is reduced by an antireflection layer consisting of dielectric layers such as TaOx, TiOx, SiN, SiOx, SiC, MgF2, AlOx. On the rear side of the solar cell, a surface contact with a low ohmic resistance, for example, Au / Zn / Au,
  • one of the following quadruple solar cells can be produced: GalnP (1.9 eV) / GaAs (1.4 eV) / GalnAs (1.1 eV) / GaSb (0.7 eV);
  • GalnP (1.9 eV) / GaAs (1.4 eV) / GalnAs (1.0 eV) / GalnAsSb (0.5 eV);
  • GalnP (1.9 eV) as subcell 12
  • GaAs (1.4 eV) as subcell 4
  • GalnAs (1.1 eV) as subcell 3
  • GaSb (0.7 eV) as subcell 2;
  • GalnP (1.9 eV) as subcell 12
  • GaAs (1.4 eV) as subcell 4
  • GalnAs (1.0 eV) as subcell 3
  • GalnAsSb (0.5 eV) as subcell 2;
  • AIGalnP 2.0 eV as subcell 12
  • AIGaAs 1.5 eV
  • GalnAs 1.1 eV
  • GaSb 0.7 eV
  • GalnAsP 1.5 eV
  • GalnAs 1.1 eV
  • GaSb 0.7 eV
  • the solar cell structure can be produced, for example, via the following steps:
  • a GalnP, GaAs and GalnAs subcell is epitaxially grown on a GaAs or germanium substrate (e.g., by organometallic vapor phase epitaxy);
  • Gallium antimonide grown substrate e.g., by organometallic vapor phase epitaxy
  • Five-axis solar cells may consist of a front-side subcell with pn junctions in AIGalnP (2.0 eV), GalnAsP (1.6 eV) and GalnAs (1.2 eV), with a metamorphic buffer inserted between the GalnAsP and GalnAs subcell to bridge the lattice constant difference.
  • the front subcell is epitaxied on gallium arsenide substrate.
  • the backside subcell is grown on gallium antimonide and contains, for example, sub-cells with pn junctions in GaPSb (0.9 eV) and GalnAsSb (0.5 eV).
  • a metamorphic buffer layer can be inserted to bridge different lattice constants.
  • the back and front subcell are then bonded together after the epitaxy and any necessary polishing and cleaning steps, and the GaAs substrate of the front subcell is removed.

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Abstract

Cellule solaire à multi-jonction comportant au moins trois jonctions p-n, cette cellule comprenant une cellule partielle arrière dotée d'au moins une jonction p-n et contenant du GaSb, et une cellule partielle avant dotée d'au moins deux jonctions p-n. L'invention est caractérisée en ce que la cellule partielle arrière présente une constante de réseau supérieure de ≥ 2 %, notamment de > 4 %, par rapport à la cellule partielle avant, les deux cellules partielles étant reliées ensemble par une liaison de tranche optiquement transparente et électriquement conductrice. La cellule solaire à multi-jonction présente une absorption élevée jusqu'à l'énergie de bande interdite de la cellule partielle inférieure contenant du GaSb, ainsi qu'une tension photoélectrique supérieure à celle des cellules solaires à multi-jonction de l'état de la technique. L'invention concerne en outre un procédé de fabrication de la cellule solaire à multi-jonction selon l'invention ainsi que des utilisations de cette cellule solaire à multi-jonction.
EP14703396.3A 2013-02-08 2014-02-10 Cellule solaire à multi-jonction, procédé de fabrication et utilisations Withdrawn EP2954559A1 (fr)

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DE201310002298 DE102013002298A1 (de) 2013-02-08 2013-02-08 Mehrfachsolarzelle, Verfahren zu deren Herstellung und Verwendung hiervon
PCT/EP2014/052552 WO2014122308A1 (fr) 2013-02-08 2014-02-10 Cellule solaire à multi-jonction, procédé de fabrication et utilisations

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WO2020072458A1 (fr) 2018-10-03 2020-04-09 Array Photonics, Inc. Couches tampons semi-conductrices optiquement transparentes et structures les utilisant
CN112103365A (zh) * 2020-11-13 2020-12-18 南昌凯迅光电有限公司 一种制作三结太阳电池的方法及三结太阳电池

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