WO2015185309A1 - Composant semi-conducteur à base de in(alga)as et utilisation - Google Patents

Composant semi-conducteur à base de in(alga)as et utilisation Download PDF

Info

Publication number
WO2015185309A1
WO2015185309A1 PCT/EP2015/059795 EP2015059795W WO2015185309A1 WO 2015185309 A1 WO2015185309 A1 WO 2015185309A1 EP 2015059795 W EP2015059795 W EP 2015059795W WO 2015185309 A1 WO2015185309 A1 WO 2015185309A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
semiconductor
doped
semiconductor component
component according
Prior art date
Application number
PCT/EP2015/059795
Other languages
German (de)
English (en)
Inventor
Stefan HECKELMANN
Andreas W. Bett
Frank Dimroth
David LACKNER
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Publication of WO2015185309A1 publication Critical patent/WO2015185309A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the invention relates to semiconductor devices which are formed from a substrate and at least two semiconductor layers forming a pn junction, wherein the p-doped semiconductor layer consists of ln (AIGa) As and the n-doped semiconductor layer consists of ln (AIGa) P.
  • the semiconductor components according to the invention are used in particular as solar cells or multiple solar cells, but also as photodetectors.
  • the material Al x Gai_ x As offers a very interesting band gap for solar cells. With an Al content x to about 0.44, Al x Gai_ x As is a direct semiconductor and has a bandgap E g of 1.4 eV to about 1.9 eV.
  • defects form which are directly linked to the n-type dopant. From an AI content of about 0.20 up to the limit of indi- In addition to direct material, the energy levels of these defects are partly within the band gap. Since they are directly related to the n-type dopant, their concentration can reach the same order of magnitude as that of the n-type dopant. In the literature, these defects are often referred to as DX centers and modeled after Chadi and Chang (DJ Chadi and KJ
  • o y Ga y P lni_ example can be grown on GaAs or Ge.
  • this semiconductor has the same lattice constant only for a certain material composition (y about 0.50).
  • te such as GaAs or Ge, so that only for a certain band gap (about 1.9 eV) can be produced a solar cell with the lattice constant of GaAs or Ge [1].
  • solar cells can also be grown at other lattice constants and other band gaps.
  • this is much more complicated than varying the Al content in the Al x Gai_ x As since the lattice constant barely changes.
  • Ga 0 .5ol n 0 .5oP contains a significant amount of indium.
  • indium is a rare element of the earth's crust, this leads to higher material and thus production costs in comparison to a solar cell made of Al x Gai_ x As.
  • O Quaternary compounds such as GalnAsP can also be used as cell material.
  • the lattice constant and band gap of this quaternary material are, however, considerably more complicated to set and control than in Al x Gai_ x As - use of partially transparent solar cells with a lower band gap.
  • a semiconductor component having at least one substrate and at least two semiconductor layers forming a pn junction is provided.
  • the p-type semiconductor layer is made of In x (Al y Gai_ y) i_ x As ⁇ (with 0.00 ⁇ x ⁇ 0.49 and (0.15 + 0.4 x 2.7 + x 2) ⁇ y 0.44 + 0.8 x 2.2 + x 2) for 0.00 ⁇ x ⁇ 00:35 respectively (0.15 + 0.4 x 2.7 + x 2) ⁇ y ⁇ 1 0.35 ⁇ x ⁇ 0.49 formed.
  • the n-doped semiconductor layer is made of ln z (Al w Gai_ w) i_ z P 0.48 ⁇ z ⁇ 0.97 and 0 ⁇ w ⁇ 1, wherein the lattice mismatch of the n-type semiconductor layer to the p-doped semiconductor layer is at most 1.5%.
  • the semiconductor layers consist essentially of the materials mentioned. At the same time, however, small amounts of other elements may be included without adversely affecting the function of the semiconductor device. Likewise, small amounts of usual for the materials of the semiconductor layers impurities may be included.
  • n-doped material can be in the composition range of In x (Al y Ga y) i- x As, in which the DX-centers the n-doped Significantly affect material, increase the efficiency of the semiconductor device.
  • the absorption edge of the semiconductor component remains adjustable via the choice of the aluminum content in a region dependent on the content.
  • the strength of the improvement depends not only on the material composition of In x (Al y Gai_ y) i_ x As, but also on the selected n-type dopant of the n-doped In x (Al y Gai_ y) i_ x As layer is replaced by the ln z (Al w Gai_ w) i_ z P.
  • a further preferred embodiment provides that the p-doped semiconductor layer of In x (Al y Gai_ y) i_ x As with 0 ⁇ x ⁇ 12:32 and (0.15 + 0.4 * x + 2.7 * x 2) ⁇ y ⁇ (12:44 + 0.8 * x + 2.2 * x 2 ) and the n-doped semiconductor layer
  • the space charge zone forming at the pn junction can also be enlarged by an unintentionally or lowly doped i-layer or expanded into the p-doped semiconductor layer or into the n-doped semiconductor layer.
  • the not intentionally doped i-layer is preferably made of
  • the n-doped semiconductor layer may additionally contain antimony.
  • the proportion of antimony is preferably 0 to 5%, preferably 0.2 to 2.5% and particularly preferably 0.4 to 1.2%.
  • the substrate of the semiconductor component according to the invention is preferably made of GaAs or Ge. It is likewise possible to use a substrate carrier, in particular made of silicon, which is formed at least in regions with a coating of GaAs or Ge.
  • the substrate consists essentially of the materials mentioned. At the same time, however, small amounts of other elements may be included without adversely affecting the function of the semiconductor device. Likewise, small amounts of impurities common for the substrate materials may be included.
  • a further preferred embodiment provides that the p-type semiconductor layer In x (Al y Gai_ y) i_ x As with 0.00 ⁇ x ⁇ 0.49 and (0.15 + 0.4 x 2.7 + 2 x ) ⁇ y ⁇ (0.44 + 0.8 x 2.2 + x 2) for 0.00 ⁇ x ⁇ 00:35 respectively (0.15 + 0.4 x 2.7 + x 2) ⁇ y ⁇ 1 for 0.35 ⁇ x ⁇ 0.49 and between p-doped semiconductor layer and substrate at least one metamorphic buffer layer, in particular of GalnP and / or ln (AIGa) As is deposited.
  • the n-doped semiconductor layer be lattice-matched or slightly strained, i. with a maximum lattice mismatch of 1.5% to the p-doped semiconductor layer.
  • the p-doped semiconductor layers preferably have a layer thickness in Range of 30 nm to 5 ⁇ , in particular from 500 nm to 3 ⁇ on.
  • the n-doped semiconductor layers preferably have a layer thickness in the range from 30 nm to 2.5 ⁇ m, in particular from 90 nm to 500 nm.
  • the non-doped i-region preferably has a layer thickness in the range from 0 nm to 1 ⁇ m, in particular from 0 nm to 300 nm.
  • dopants used are carbon, zinc or mixtures thereof.
  • the dopant concentration is preferably in the range of 1 ⁇ 10 16 cm “3 to 5 * 10 18 cm “ 3 , particularly preferably of 5 * 10 16 cm “3 to 5 * 10 17 cm “ 3 .
  • the dopant used for the n-doped semiconductor layer is preferably silicon, tellurium, selenium or mixtures thereof. Here lies the
  • Dopant concentration preferably in the range of 1 * 10 16 cm “3 to 5 * 10 18 cm “ 3 , particularly preferably from 5 * 10 17 cm “3 to 3 * 10 18 cm “ 3 .
  • the semiconductor component according to the invention has at least one barrier layer.
  • the barrier layers are preferably selected from In (AIGa) As and / or In (AIGa) P and have a layer thickness in the range of 15 nm to 150 nm.
  • the semiconductor component can be grown both upright and inverted.
  • the pn junction of the semiconductor device according to the invention can be used for light absorption.
  • the pn junction has an internal quantum efficiency of at least 80% at at least one wavelength in the range of 300 nm to 840 nm.
  • Quantum yield is a measure of the ability of a solar cell to emit photons in electrons convert.
  • the measuring methodology for the determination of the internal quantum yield is described in B. Fischer, "Loss Analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements", Dissertation, University of Konstanz, 2003, p. 39-46.
  • the semiconductor component is preferably present as a solar cell or as a multiple solar cell.
  • the semiconductor device is a photodetector or a receiver for laser power transmission.
  • the semiconductor devices according to the invention are used in particular for power generation in space or in the terrestrial area.
  • Fig. 1 shows a single solar cell according to the invention
  • Fig. 2 shows a tandem solar cell according to the invention
  • Fig. 3 shows a triple solar cell according to the invention
  • Fig. 5 shows a five-axis solar cell according to the invention
  • FIG. 1 shows by way of example a single solar cell according to the invention. This has a backside contact and consists of a p-GaAs substrate, a p-GaAs buffer layer, an AIGaAs / GalnP solar cell, a partially removed GaAs capping layer with front-side contact deposited thereon and an antireflection layer in the areas where the GaAs capping layer is removed.
  • the AIGaAs / GalnP solar cell consists of a highly p-doped (p + -doped) rear field of AIGaAs, a p-doped AIGaAs base, a lattice-matched n- (Al) GalnP emitter, and a highly n-doped (n + doped) window layer from AllnP.
  • FIG. 2 shows another application example for a tandem solar cell.
  • This has a backside contact and consists of a p-GaAs substrate, a p-GaAs buffer layer, a GaAs subcell, a tunnel diode, an AIGaAs / GalnP top cell, a partially removed GaAs cap layer with front contact applied thereto, and an antireflective layer in the regions in which the GaAs capping layer is removed.
  • the GaAs subcell consists of a p-AIGaAs barrier, a p-GaAs base, an n-GaAs emitter and an n + -AIGalnP barrier layer.
  • the subsequent tunnel diode consists of a very high n-doped (n ++ doped) GaAs
  • the subsequent AIGaAs / GalnP upper cell consists of a p + -AIGalnP barrier layer, a p + -AIGaAs back surface field, a p-doped AIGaAs base, a lattice-matched n- (Al) GalnP emitter, and a n-type window layer + -AllnP.
  • FIG. 3 shows a further example of application for a triple-junction solar cell.
  • This has a backside contact and consists of a Ge subcell, an n-doped growth layer, an n + AIGalnP barrier layer, a first tunnel diode, a GalnAs mid cell, a second tunnel diode, an AIGaAs / GalnP top cell, a partially removed GalnAs Cover layer with front side contact applied thereto and an antireflection layer in the areas in which the GalnAs cover layer is removed.
  • the Ge subcell consists of a p-Ge substrate and an n-Ge emitter diffused therein.
  • the two tunnel diodes each consist of an n ++ -GalnAs Layer and a p -AIGaAs layer.
  • the GalnAs mid-cell consists of a p + -AIGalnP barrier layer, a p-AIGalnAs barrier, a p-GalnAs base, an n-GalnAs emitter, and an n + -AIGalnP barrier layer.
  • AIGaAs / GalnP upper cell consists of a p + -AIGalnP barrier layer, a p + -AIGalnAs back surface field, a p-doped AIGalnAs base, a lattice-matched n- (AI) GalnP emitter, and a window layer of n + -AllnP.
  • FIG. 4 shows a further example of an application for a metamorphic triple-junction solar cell.
  • This has a backside contact and consists of a Ge subcell, a buffer, a first tunnel diode, a GalnAs center cell, a second tunnel diode, an AigalnAs / GalnP top cell, a partially removed GalnAs cap layer with front contact applied thereto, and an antireflection layer in the Areas in which the GaAs cap layer is removed.
  • the Ge subcell consists of a p-Ge substrate and an n-Ge emitter diffused therein.
  • the buffer consists of an n-doped growth layer, several metamorphic n-GalnAs buffer layers and an n + -AIGalnP barrier layer.
  • the two tunnel diodes each consist of an n ++ -GalnAs layer and a p ++ -AIGaAs layer.
  • the GalnAs mid-cell consists of a p + -AIGalnP barrier layer, a p-AIGalnAs barrier, a p-GalnAs base, an n-GalnAs emitter, and an n + -AIGalnP barrier layer.
  • the AIGalnAs / GalnP upper cell consists of a p + -AIGalnP barrier layer, a p + -AIGalnAs back surface field, a p-doped AIGalnAs base, a lattice matched n- (AI) GalnP emitter, and a window layer of n + -AllnP.
  • FIG. 5 shows another application example for a five-axis solar cell. It has a backside contact and consists of a Ge subcell, an n-doped growth layer, an n + AIGalnP barrier layer, a first tunnel diode, a GaInNAs subcell, a second tunnel diode, a GalnAs subcell, a third tunnel diode, an AIGaAs / GalnP subcell, one a fourth tunnel diode, an AIGalnP top cell and a partially removed GalnAs cover layer with front contact applied thereto and an antireflection layer in the areas in which the GalnAs cover layer is removed.
  • the Ge subcell consists of a p-Ge substrate and an n-Ge emitter diffused therein.
  • the four tunnel diodes each consist of an n ++ -GalnAs layer and a p ++ -AIGaAs layer.
  • GalnNAs subcell consists of a p + -AIGalnP barrier layer, a p-GalnAs barrier, a p-GalnNAs base, an n-GalnNAs emitter, and an n + -AIGalnP barrier layer.
  • the GalnAs subcell consists of a p-AIGalnP barrier layer, a p-GalnAs base, an n-GalnAs emitter, and an n + -AIGalnP barrier layer.
  • the AIGalnAs / GalnP subcell consists of a p + -AIGalnP barrier layer, a p + -AIGalnAs back surface field, a p-doped AIGalnAs base, a lattice-matched n-GalnP emitter, and a barrier layer of n + -AIGalnP.
  • the AIGalnP top cell consists of a p + -AIGalnP barrier, a p-AIGalnP base, an n-AIGalnP emitter and a window layer of n + -AllnP.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne des composants semi-conducteurs constitués d'un substrat et d'au moins deux couches semi-conductrices formant une jonction pn, la couche semi-conductrice dopée p étant en In(AlGa)As et la couche semi-conductrice dopée n étant en In(Al Ga)P. Les composants semi-conducteurs selon l'invention trouvent une application notamment comme que cellules solaires ou cellules solaires multiples tout comme photodétecteurs.
PCT/EP2015/059795 2014-06-05 2015-05-05 Composant semi-conducteur à base de in(alga)as et utilisation WO2015185309A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014210753.9A DE102014210753B4 (de) 2014-06-05 2014-06-05 Halbleiterbauelement auf Basis von In(AlGa)As und dessen Verwendung
DE102014210753.9 2014-06-05

Publications (1)

Publication Number Publication Date
WO2015185309A1 true WO2015185309A1 (fr) 2015-12-10

Family

ID=53055046

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2015/059795 WO2015185309A1 (fr) 2014-06-05 2015-05-05 Composant semi-conducteur à base de in(alga)as et utilisation

Country Status (2)

Country Link
DE (1) DE102014210753B4 (fr)
WO (1) WO2015185309A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107845695A (zh) * 2017-12-08 2018-03-27 苏州矩阵光电有限公司 一种晶体外延结构及生长方法
WO2018134016A1 (fr) * 2017-01-18 2018-07-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellule solaire multiple avec sous-cellule au germanium au dos et son utilisation

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016225186A1 (de) * 2016-12-15 2018-06-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaisches Halbleiterbauelement zur Konversion von Strahlungsleistung in elektrische Leistung, Verfahren zu dessen Herstellung und dessen Verwendung
DE102018001592A1 (de) * 2018-03-01 2019-09-05 Azur Space Solar Power Gmbh Mehrfachsolarzelle
EP3965169B1 (fr) 2020-09-07 2023-02-15 AZUR SPACE Solar Power GmbH Cellule solaire multiple monolithique empilée

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096010A1 (en) * 2008-10-17 2010-04-22 Kopin Corporation Ingap heterojunction barrier solar cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5342453A (en) 1992-11-13 1994-08-30 Midwest Research Institute Heterojunction solar cell
US5316593A (en) 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
US6340788B1 (en) * 1999-12-02 2002-01-22 Hughes Electronics Corporation Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
DE102012004734A1 (de) * 2012-03-08 2013-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle und deren Verwendung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100096010A1 (en) * 2008-10-17 2010-04-22 Kopin Corporation Ingap heterojunction barrier solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
D. JUNG ET AL: "AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application", JOURNAL OF APPLIED PHYSICS, vol. 74, no. 3, August 1993 (1993-08-01), pages 2090, XP055101347, ISSN: 0021-8979, DOI: 10.1063/1.354753 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018134016A1 (fr) * 2017-01-18 2018-07-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Cellule solaire multiple avec sous-cellule au germanium au dos et son utilisation
CN107845695A (zh) * 2017-12-08 2018-03-27 苏州矩阵光电有限公司 一种晶体外延结构及生长方法
CN107845695B (zh) * 2017-12-08 2024-01-16 苏州矩阵光电有限公司 一种晶体外延结构及生长方法

Also Published As

Publication number Publication date
DE102014210753A1 (de) 2015-12-17
DE102014210753B4 (de) 2017-04-27

Similar Documents

Publication Publication Date Title
DE102014000156A1 (de) Mehrfachsolarzelle mit einer einen niedrigen Bandabstand aufweisenden Absorptionsschicht in der Mittelzelle
DE112011103244T5 (de) Mehrfachübergangssolarzelle mit schwachnitridischer Teilzelle, die eine graduierte Dotierung aufweist
DE102012220933A1 (de) Mehrfachübergangs-Solarzellen hohen Wirkungsgrades
DE102014210753B4 (de) Halbleiterbauelement auf Basis von In(AlGa)As und dessen Verwendung
DE3635944A1 (de) Tandem-solarzelle
DE102012004734A1 (de) Mehrfachsolarzelle und deren Verwendung
EP2264788A2 (fr) Cellule solaire multiple monolithique
DE2624348A1 (de) Heterouebergang-pn-diodenphotodetektor
DE2607005C2 (de) Integrierte Tandem-Solarzelle
DE102017200700A1 (de) Mehrfachsolarzelle mit rückseitiger Germanium-Teilzelle und deren Verwendung
DE202011101552U1 (de) Gitterdesign für eine III-V-Verbindungshalbleiterzelle
DE102015016822A1 (de) Stapelförmige Mehrfach-Solarzelle
DE102018203509A1 (de) Vierfach-Solarzelle für Raumanwendungen
DE102012211296A1 (de) Verbesserungen der Leistung von III/V-Heteroübergangs-Solarzellen
WO2013043875A2 (fr) Cellule de nitrure du groupe iii-v dilué à gradient de composition ayant des couches de blocage pour une cellule solaire multi-jonctions
DE102012218265B4 (de) Rückseitenfeld-Strukturen für Mehrfachübergang-III-V-Photovoltaikeinheiten und Verfahren zum Herstellen einer Mehrfachübergang-III-V-Photovoltaikeinheit
DE202023101309U1 (de) Solarzelle und Photovoltaikmodul
DE102010010880A1 (de) Multijunction-Solarzellen basierend auf Gruppe-IV/III-V Hybrid-Halbleiterverbindungen
DE102012005802A1 (de) Energiewandeleinrichtung mit selektiven Kontakten
DE102011081983A1 (de) Solarzelle und Verfahren zu ihrer Herstellung
DE102016208113A1 (de) Mehrfachsolarzelle und deren Verwendung
EP3503211B1 (fr) Composant semi-conducteur pourvu d'émetteur à structure quantique fortement dopé
EP3442036B1 (fr) Composant semi-conducteur optoélectronique
EP3937260A1 (fr) Cellule solaire multiple métamorphique monolithique
EP3712965A1 (fr) Cellule solaire de concentrateur terrestre, métamorphique droit, monolithique et en forme d'empilement

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15720980

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15720980

Country of ref document: EP

Kind code of ref document: A1