WO2015185309A1 - Composant semi-conducteur à base de in(alga)as et utilisation - Google Patents
Composant semi-conducteur à base de in(alga)as et utilisation Download PDFInfo
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- WO2015185309A1 WO2015185309A1 PCT/EP2015/059795 EP2015059795W WO2015185309A1 WO 2015185309 A1 WO2015185309 A1 WO 2015185309A1 EP 2015059795 W EP2015059795 W EP 2015059795W WO 2015185309 A1 WO2015185309 A1 WO 2015185309A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010248 power generation Methods 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 22
- 230000007547 defect Effects 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Definitions
- the invention relates to semiconductor devices which are formed from a substrate and at least two semiconductor layers forming a pn junction, wherein the p-doped semiconductor layer consists of ln (AIGa) As and the n-doped semiconductor layer consists of ln (AIGa) P.
- the semiconductor components according to the invention are used in particular as solar cells or multiple solar cells, but also as photodetectors.
- the material Al x Gai_ x As offers a very interesting band gap for solar cells. With an Al content x to about 0.44, Al x Gai_ x As is a direct semiconductor and has a bandgap E g of 1.4 eV to about 1.9 eV.
- defects form which are directly linked to the n-type dopant. From an AI content of about 0.20 up to the limit of indi- In addition to direct material, the energy levels of these defects are partly within the band gap. Since they are directly related to the n-type dopant, their concentration can reach the same order of magnitude as that of the n-type dopant. In the literature, these defects are often referred to as DX centers and modeled after Chadi and Chang (DJ Chadi and KJ
- o y Ga y P lni_ example can be grown on GaAs or Ge.
- this semiconductor has the same lattice constant only for a certain material composition (y about 0.50).
- te such as GaAs or Ge, so that only for a certain band gap (about 1.9 eV) can be produced a solar cell with the lattice constant of GaAs or Ge [1].
- solar cells can also be grown at other lattice constants and other band gaps.
- this is much more complicated than varying the Al content in the Al x Gai_ x As since the lattice constant barely changes.
- Ga 0 .5ol n 0 .5oP contains a significant amount of indium.
- indium is a rare element of the earth's crust, this leads to higher material and thus production costs in comparison to a solar cell made of Al x Gai_ x As.
- O Quaternary compounds such as GalnAsP can also be used as cell material.
- the lattice constant and band gap of this quaternary material are, however, considerably more complicated to set and control than in Al x Gai_ x As - use of partially transparent solar cells with a lower band gap.
- a semiconductor component having at least one substrate and at least two semiconductor layers forming a pn junction is provided.
- the p-type semiconductor layer is made of In x (Al y Gai_ y) i_ x As ⁇ (with 0.00 ⁇ x ⁇ 0.49 and (0.15 + 0.4 x 2.7 + x 2) ⁇ y 0.44 + 0.8 x 2.2 + x 2) for 0.00 ⁇ x ⁇ 00:35 respectively (0.15 + 0.4 x 2.7 + x 2) ⁇ y ⁇ 1 0.35 ⁇ x ⁇ 0.49 formed.
- the n-doped semiconductor layer is made of ln z (Al w Gai_ w) i_ z P 0.48 ⁇ z ⁇ 0.97 and 0 ⁇ w ⁇ 1, wherein the lattice mismatch of the n-type semiconductor layer to the p-doped semiconductor layer is at most 1.5%.
- the semiconductor layers consist essentially of the materials mentioned. At the same time, however, small amounts of other elements may be included without adversely affecting the function of the semiconductor device. Likewise, small amounts of usual for the materials of the semiconductor layers impurities may be included.
- n-doped material can be in the composition range of In x (Al y Ga y) i- x As, in which the DX-centers the n-doped Significantly affect material, increase the efficiency of the semiconductor device.
- the absorption edge of the semiconductor component remains adjustable via the choice of the aluminum content in a region dependent on the content.
- the strength of the improvement depends not only on the material composition of In x (Al y Gai_ y) i_ x As, but also on the selected n-type dopant of the n-doped In x (Al y Gai_ y) i_ x As layer is replaced by the ln z (Al w Gai_ w) i_ z P.
- a further preferred embodiment provides that the p-doped semiconductor layer of In x (Al y Gai_ y) i_ x As with 0 ⁇ x ⁇ 12:32 and (0.15 + 0.4 * x + 2.7 * x 2) ⁇ y ⁇ (12:44 + 0.8 * x + 2.2 * x 2 ) and the n-doped semiconductor layer
- the space charge zone forming at the pn junction can also be enlarged by an unintentionally or lowly doped i-layer or expanded into the p-doped semiconductor layer or into the n-doped semiconductor layer.
- the not intentionally doped i-layer is preferably made of
- the n-doped semiconductor layer may additionally contain antimony.
- the proportion of antimony is preferably 0 to 5%, preferably 0.2 to 2.5% and particularly preferably 0.4 to 1.2%.
- the substrate of the semiconductor component according to the invention is preferably made of GaAs or Ge. It is likewise possible to use a substrate carrier, in particular made of silicon, which is formed at least in regions with a coating of GaAs or Ge.
- the substrate consists essentially of the materials mentioned. At the same time, however, small amounts of other elements may be included without adversely affecting the function of the semiconductor device. Likewise, small amounts of impurities common for the substrate materials may be included.
- a further preferred embodiment provides that the p-type semiconductor layer In x (Al y Gai_ y) i_ x As with 0.00 ⁇ x ⁇ 0.49 and (0.15 + 0.4 x 2.7 + 2 x ) ⁇ y ⁇ (0.44 + 0.8 x 2.2 + x 2) for 0.00 ⁇ x ⁇ 00:35 respectively (0.15 + 0.4 x 2.7 + x 2) ⁇ y ⁇ 1 for 0.35 ⁇ x ⁇ 0.49 and between p-doped semiconductor layer and substrate at least one metamorphic buffer layer, in particular of GalnP and / or ln (AIGa) As is deposited.
- the n-doped semiconductor layer be lattice-matched or slightly strained, i. with a maximum lattice mismatch of 1.5% to the p-doped semiconductor layer.
- the p-doped semiconductor layers preferably have a layer thickness in Range of 30 nm to 5 ⁇ , in particular from 500 nm to 3 ⁇ on.
- the n-doped semiconductor layers preferably have a layer thickness in the range from 30 nm to 2.5 ⁇ m, in particular from 90 nm to 500 nm.
- the non-doped i-region preferably has a layer thickness in the range from 0 nm to 1 ⁇ m, in particular from 0 nm to 300 nm.
- dopants used are carbon, zinc or mixtures thereof.
- the dopant concentration is preferably in the range of 1 ⁇ 10 16 cm “3 to 5 * 10 18 cm “ 3 , particularly preferably of 5 * 10 16 cm “3 to 5 * 10 17 cm “ 3 .
- the dopant used for the n-doped semiconductor layer is preferably silicon, tellurium, selenium or mixtures thereof. Here lies the
- Dopant concentration preferably in the range of 1 * 10 16 cm “3 to 5 * 10 18 cm “ 3 , particularly preferably from 5 * 10 17 cm “3 to 3 * 10 18 cm “ 3 .
- the semiconductor component according to the invention has at least one barrier layer.
- the barrier layers are preferably selected from In (AIGa) As and / or In (AIGa) P and have a layer thickness in the range of 15 nm to 150 nm.
- the semiconductor component can be grown both upright and inverted.
- the pn junction of the semiconductor device according to the invention can be used for light absorption.
- the pn junction has an internal quantum efficiency of at least 80% at at least one wavelength in the range of 300 nm to 840 nm.
- Quantum yield is a measure of the ability of a solar cell to emit photons in electrons convert.
- the measuring methodology for the determination of the internal quantum yield is described in B. Fischer, "Loss Analysis of crystalline silicon solar cells using photoconductance and quantum efficiency measurements", Dissertation, University of Konstanz, 2003, p. 39-46.
- the semiconductor component is preferably present as a solar cell or as a multiple solar cell.
- the semiconductor device is a photodetector or a receiver for laser power transmission.
- the semiconductor devices according to the invention are used in particular for power generation in space or in the terrestrial area.
- Fig. 1 shows a single solar cell according to the invention
- Fig. 2 shows a tandem solar cell according to the invention
- Fig. 3 shows a triple solar cell according to the invention
- Fig. 5 shows a five-axis solar cell according to the invention
- FIG. 1 shows by way of example a single solar cell according to the invention. This has a backside contact and consists of a p-GaAs substrate, a p-GaAs buffer layer, an AIGaAs / GalnP solar cell, a partially removed GaAs capping layer with front-side contact deposited thereon and an antireflection layer in the areas where the GaAs capping layer is removed.
- the AIGaAs / GalnP solar cell consists of a highly p-doped (p + -doped) rear field of AIGaAs, a p-doped AIGaAs base, a lattice-matched n- (Al) GalnP emitter, and a highly n-doped (n + doped) window layer from AllnP.
- FIG. 2 shows another application example for a tandem solar cell.
- This has a backside contact and consists of a p-GaAs substrate, a p-GaAs buffer layer, a GaAs subcell, a tunnel diode, an AIGaAs / GalnP top cell, a partially removed GaAs cap layer with front contact applied thereto, and an antireflective layer in the regions in which the GaAs capping layer is removed.
- the GaAs subcell consists of a p-AIGaAs barrier, a p-GaAs base, an n-GaAs emitter and an n + -AIGalnP barrier layer.
- the subsequent tunnel diode consists of a very high n-doped (n ++ doped) GaAs
- the subsequent AIGaAs / GalnP upper cell consists of a p + -AIGalnP barrier layer, a p + -AIGaAs back surface field, a p-doped AIGaAs base, a lattice-matched n- (Al) GalnP emitter, and a n-type window layer + -AllnP.
- FIG. 3 shows a further example of application for a triple-junction solar cell.
- This has a backside contact and consists of a Ge subcell, an n-doped growth layer, an n + AIGalnP barrier layer, a first tunnel diode, a GalnAs mid cell, a second tunnel diode, an AIGaAs / GalnP top cell, a partially removed GalnAs Cover layer with front side contact applied thereto and an antireflection layer in the areas in which the GalnAs cover layer is removed.
- the Ge subcell consists of a p-Ge substrate and an n-Ge emitter diffused therein.
- the two tunnel diodes each consist of an n ++ -GalnAs Layer and a p -AIGaAs layer.
- the GalnAs mid-cell consists of a p + -AIGalnP barrier layer, a p-AIGalnAs barrier, a p-GalnAs base, an n-GalnAs emitter, and an n + -AIGalnP barrier layer.
- AIGaAs / GalnP upper cell consists of a p + -AIGalnP barrier layer, a p + -AIGalnAs back surface field, a p-doped AIGalnAs base, a lattice-matched n- (AI) GalnP emitter, and a window layer of n + -AllnP.
- FIG. 4 shows a further example of an application for a metamorphic triple-junction solar cell.
- This has a backside contact and consists of a Ge subcell, a buffer, a first tunnel diode, a GalnAs center cell, a second tunnel diode, an AigalnAs / GalnP top cell, a partially removed GalnAs cap layer with front contact applied thereto, and an antireflection layer in the Areas in which the GaAs cap layer is removed.
- the Ge subcell consists of a p-Ge substrate and an n-Ge emitter diffused therein.
- the buffer consists of an n-doped growth layer, several metamorphic n-GalnAs buffer layers and an n + -AIGalnP barrier layer.
- the two tunnel diodes each consist of an n ++ -GalnAs layer and a p ++ -AIGaAs layer.
- the GalnAs mid-cell consists of a p + -AIGalnP barrier layer, a p-AIGalnAs barrier, a p-GalnAs base, an n-GalnAs emitter, and an n + -AIGalnP barrier layer.
- the AIGalnAs / GalnP upper cell consists of a p + -AIGalnP barrier layer, a p + -AIGalnAs back surface field, a p-doped AIGalnAs base, a lattice matched n- (AI) GalnP emitter, and a window layer of n + -AllnP.
- FIG. 5 shows another application example for a five-axis solar cell. It has a backside contact and consists of a Ge subcell, an n-doped growth layer, an n + AIGalnP barrier layer, a first tunnel diode, a GaInNAs subcell, a second tunnel diode, a GalnAs subcell, a third tunnel diode, an AIGaAs / GalnP subcell, one a fourth tunnel diode, an AIGalnP top cell and a partially removed GalnAs cover layer with front contact applied thereto and an antireflection layer in the areas in which the GalnAs cover layer is removed.
- the Ge subcell consists of a p-Ge substrate and an n-Ge emitter diffused therein.
- the four tunnel diodes each consist of an n ++ -GalnAs layer and a p ++ -AIGaAs layer.
- GalnNAs subcell consists of a p + -AIGalnP barrier layer, a p-GalnAs barrier, a p-GalnNAs base, an n-GalnNAs emitter, and an n + -AIGalnP barrier layer.
- the GalnAs subcell consists of a p-AIGalnP barrier layer, a p-GalnAs base, an n-GalnAs emitter, and an n + -AIGalnP barrier layer.
- the AIGalnAs / GalnP subcell consists of a p + -AIGalnP barrier layer, a p + -AIGalnAs back surface field, a p-doped AIGalnAs base, a lattice-matched n-GalnP emitter, and a barrier layer of n + -AIGalnP.
- the AIGalnP top cell consists of a p + -AIGalnP barrier, a p-AIGalnP base, an n-AIGalnP emitter and a window layer of n + -AllnP.
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Abstract
L'invention concerne des composants semi-conducteurs constitués d'un substrat et d'au moins deux couches semi-conductrices formant une jonction pn, la couche semi-conductrice dopée p étant en In(AlGa)As et la couche semi-conductrice dopée n étant en In(Al Ga)P. Les composants semi-conducteurs selon l'invention trouvent une application notamment comme que cellules solaires ou cellules solaires multiples tout comme photodétecteurs.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102014210753.9A DE102014210753B4 (de) | 2014-06-05 | 2014-06-05 | Halbleiterbauelement auf Basis von In(AlGa)As und dessen Verwendung |
DE102014210753.9 | 2014-06-05 |
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WO2015185309A1 true WO2015185309A1 (fr) | 2015-12-10 |
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PCT/EP2015/059795 WO2015185309A1 (fr) | 2014-06-05 | 2015-05-05 | Composant semi-conducteur à base de in(alga)as et utilisation |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107845695A (zh) * | 2017-12-08 | 2018-03-27 | 苏州矩阵光电有限公司 | 一种晶体外延结构及生长方法 |
WO2018134016A1 (fr) * | 2017-01-18 | 2018-07-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Cellule solaire multiple avec sous-cellule au germanium au dos et son utilisation |
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DE102016225186A1 (de) * | 2016-12-15 | 2018-06-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaisches Halbleiterbauelement zur Konversion von Strahlungsleistung in elektrische Leistung, Verfahren zu dessen Herstellung und dessen Verwendung |
DE102018001592A1 (de) * | 2018-03-01 | 2019-09-05 | Azur Space Solar Power Gmbh | Mehrfachsolarzelle |
EP3965169B1 (fr) | 2020-09-07 | 2023-02-15 | AZUR SPACE Solar Power GmbH | Cellule solaire multiple monolithique empilée |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100096010A1 (en) * | 2008-10-17 | 2010-04-22 | Kopin Corporation | Ingap heterojunction barrier solar cells |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5342453A (en) | 1992-11-13 | 1994-08-30 | Midwest Research Institute | Heterojunction solar cell |
US5316593A (en) | 1992-11-16 | 1994-05-31 | Midwest Research Institute | Heterojunction solar cell with passivated emitter surface |
US6340788B1 (en) * | 1999-12-02 | 2002-01-22 | Hughes Electronics Corporation | Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications |
DE102012004734A1 (de) * | 2012-03-08 | 2013-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mehrfachsolarzelle und deren Verwendung |
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2014
- 2014-06-05 DE DE102014210753.9A patent/DE102014210753B4/de active Active
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- 2015-05-05 WO PCT/EP2015/059795 patent/WO2015185309A1/fr active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100096010A1 (en) * | 2008-10-17 | 2010-04-22 | Kopin Corporation | Ingap heterojunction barrier solar cells |
Non-Patent Citations (1)
Title |
---|
D. JUNG ET AL: "AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application", JOURNAL OF APPLIED PHYSICS, vol. 74, no. 3, August 1993 (1993-08-01), pages 2090, XP055101347, ISSN: 0021-8979, DOI: 10.1063/1.354753 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018134016A1 (fr) * | 2017-01-18 | 2018-07-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Cellule solaire multiple avec sous-cellule au germanium au dos et son utilisation |
CN107845695A (zh) * | 2017-12-08 | 2018-03-27 | 苏州矩阵光电有限公司 | 一种晶体外延结构及生长方法 |
CN107845695B (zh) * | 2017-12-08 | 2024-01-16 | 苏州矩阵光电有限公司 | 一种晶体外延结构及生长方法 |
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DE102014210753A1 (de) | 2015-12-17 |
DE102014210753B4 (de) | 2017-04-27 |
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