EP2904355A2 - Dispositif de détection optique et procédé permettant de détecter une valeur de mesure au moyen d'un dispositif de détection optique - Google Patents

Dispositif de détection optique et procédé permettant de détecter une valeur de mesure au moyen d'un dispositif de détection optique

Info

Publication number
EP2904355A2
EP2904355A2 EP13776716.6A EP13776716A EP2904355A2 EP 2904355 A2 EP2904355 A2 EP 2904355A2 EP 13776716 A EP13776716 A EP 13776716A EP 2904355 A2 EP2904355 A2 EP 2904355A2
Authority
EP
European Patent Office
Prior art keywords
measuring
conductor
optical sensor
sensor arrangement
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13776716.6A
Other languages
German (de)
English (en)
Other versions
EP2904355B1 (fr
Inventor
Ludwig Ross
Wolfgang Foss
Angel RADEV
Benjamin Ross
Stefan Kufner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leoni Kabel GmbH
Original Assignee
Leoni Kabel Holding GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leoni Kabel Holding GmbH filed Critical Leoni Kabel Holding GmbH
Publication of EP2904355A2 publication Critical patent/EP2904355A2/fr
Application granted granted Critical
Publication of EP2904355B1 publication Critical patent/EP2904355B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/266—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
    • G01N2021/458—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods using interferential sensor, e.g. sensor fibre, possibly on optical waveguide

Definitions

  • the invention relates to an optical sensor arrangement having the features of the preamble of claim 1 and to a method for detecting a measured variable with such an optical sensor arrangement.
  • the optical sensor arrangement has a so-called integrated optical sensor element, also referred to as an optical chip.
  • This comprises a longitudinally extending support in which a waveguide structure is introduced.
  • the carrier consists of a usually transparent substrate, for example glass or a suitable plastic.
  • the waveguide structure can be introduced in various ways.
  • the waveguide structures are formed by an ion exchange process, alternatively, deposition techniques, such as CVD (chemical vapor deposition) can be used to generate the optical tracks.
  • CVD chemical vapor deposition
  • two waveguide arms namely a reference conductor and a measuring conductor are formed to form an interferometer, which extend parallel to one another on the carrier in the longitudinal direction within a conductor plane.
  • Such a sensor arrangement can be taken, for example, from EP 1 469 292 A1.
  • the sensor arrangement described therein serves for temperature measurement.
  • the measuring conductor and the reference conductor are made of different materials with different thermal expansion coefficients or have a different length. This leads to a change in temperature at a different for the two waveguide sections elongation, which is detected due to the interferometric measuring principle and assigned to a defined temperature change.
  • the use as an optical switch or filter can be found in this document. This is an electrical
  • CONFIRMATION COPY arranged operable heating element, which leads to a defined change in temperature, so that a deliberate change in length is set and thus takes place via the interferometer detectable phase shift, which is considered as switching.
  • interferometer principle for manipulating an optical signal is generally known and is also described, for example, in EP 1 041 424 A2.
  • one of the two waveguide arms of the interferometer is provided with a heating element, so that a desired phase shift can be set.
  • the object of the invention is to expand the field of application of an optical sensor based on an integrated optical chip.
  • optical sensor arrangement having the features of claim 1 and by a method having the features of claim 15.
  • advantages and preferred embodiments cited with regard to the optical sensor arrangement are also to be transferred analogously to the method.
  • the optical sensor arrangement has an optical sensor element with a carrier extending in a longitudinal direction into which a waveguide structure is introduced.
  • this optical sensor element in particular in the carrier with the introduced waveguide structure is thus a so-called optical chip, in which integrated waveguide structures are formed by processing the carrier substrate.
  • the processing for the formation of the waveguide structures is carried out in a conventional manner by ion exchange processes or by deposition techniques such as CVD.
  • the optical chip is therefore usually a monolithic component to which usually optical fibers can be connected.
  • the optical chip itself, ie the carrier with the integrated waveguide structures, has no optical fibers.
  • This optical chip is now formed as a sensor element and comprises a reference conductor and a measuring conductor, which run together on the carrier in the longitudinal direction parallel to each other within a common plane, the so-called conductor level.
  • a measuring active side surface extending transversely to the conductor plane is now formed on the optical chip, wherein the measuring conductor is arranged adjacent to this side surface on the upper side of the carrier, ie within the conductor plane.
  • the measured variable to be detected acts.
  • the two signal components of the wave arms are usually combined and form an interference signal that is evaluated.
  • the measured variable is preferably a force which leads to a one-sided deformation / bending of the carrier and / or a substance which interacts with the sensor element and thereby causes a change in the optical path length in the measuring conductor in comparison to the reference conductor.
  • the two waveguide arms are preferably formed identically to one another, ie they consist of the same material and, moreover, are in particular also designed symmetrically with respect to a center axis.
  • the sensor arrangement therefore comprises, in a preferred embodiment, an evaluation unit which is designed to evaluate such an interference signal and in particular also deduces the magnitude of the measured variable acting on the sensor element from outside on only one side. For this purpose, the intensity of the light signal is detected and evaluated.
  • the direct interaction of the measured variable to be measured with the optical chip ie the integrated optical element
  • the entire sensor arrangement is therefore essentially a miniaturized, monolithic interferometer arrangement.
  • the entire interferometer arrangement is therefore integrated in the sensor element formed by the optical chip. Due to the only one-sided interaction with the one side surface designated as a measuring active side surface, a very high sensitivity is additionally achieved.
  • the very selective detection of the desired measured variable ie the sensor reacts only to the desired measured variable.
  • the waveguide pattern on the carrier may in principle be designed differently for the formation of different interferometer principles.
  • the waveguide structure is designed to form a Mach-Zehnder interferometer.
  • light is coupled in via an input channel, which is split between the two interferometer arms (measuring conductor, reference conductor) and then brought together again.
  • This results in the interference signal which is coupled via an output channel and the evaluation is transmitted.
  • the output channel can be arranged on the same front side as the input channel or on the opposite end side.
  • a so-called 3x3 coupler is provided in the carrier, in particular on the output side, so that a total of three outputs for the interference signal are available, which are each connected via an optical fiber to the evaluation unit.
  • the two interference arms are brought up to a coupling distance to a third waveguide, so that the light from the two interference arms is coupled into the third waveguide.
  • the coupling distance is chosen in particular such that the light components in the three waveguides are 120 ° out of phase with each other.
  • the coupling distance depends in particular on the material used of the waveguide and the carrier, ie in particular the refractive index difference, and is for example in the range of 6-1 Opm. Overall, this makes it possible in particular to derive information about the direction of propagation of the light.
  • an end face of the carrier is mirrored, so that the light is thrown back into the respective reference or measuring conductor and thus the distance (length of the carrier) is traversed twice.
  • the light is preferably integrated into the optical chip, that is to say into the carrier with the introduced waveguide pattern, and preferably also coupled out with the aid of at least one optical fiber.
  • the sensor element is usually connected to the control and evaluation unit via this optical fiber.
  • This includes, inter alia, a light source, preferably a laser, which emits a coherent light, for generating the input light.
  • the evaluation unit comprises at least one light sensor, for example a photodiode for detecting the light which has been decoupled from the sensor element (interference signal). This interference signal is then evaluated in a conventional manner according to the interferometric principle.
  • a coupling element is expediently attached to the end face of the carrier, to which, on the one hand, the optical fiber is connected and which is coupled on its output side to the waveguide pattern of the substrate.
  • the coupling element itself is in turn preferably a carrier, in which for the coupling of the fibers V-grooves are introduced, in which the fibers are inserted.
  • the division of the light on the measuring conductor and the reference conductor is preferably carried out by means of a Y-divider. This is preferably formed on the carrier as part of the waveguide structure.
  • the sensor element has a very elongated extent and its length is preferably more than twenty times greater than its width. Because of this very elongated design, even comparatively small interactions with the size to be measured lead to a sufficient influence on the optical path length of the measuring conductor and thus an evaluable signal by means of the sensitive interferometer.
  • the two waveguide arms of the interferometer so the reference conductor and the measuring conductor, on the carrier in the transverse direction as far as possible from each other spaced to the largest possible relativeAusunter- to get divorced.
  • the measuring conductor and the reference conductor are therefore preferably arranged as far outside as possible and are objected to by the respective side surfaces of the sensor element, in particular by a maximum of 100 ⁇ m and preferably only by a maximum of 50 ⁇ m.
  • the distance is chosen in particular such that the outer side surfaces of the sensor element have no interaction with the so-called evanescent field, which typically forms in operation in the vicinity of the waveguides in a range of about 10-20 ⁇ .
  • the distance is therefore chosen sufficiently large that the light can propagate through the waveguide without interference.
  • the distance depends on the radius of a mode field of the propagating light in the waveguide.
  • the radius depends in particular on the refractive index difference between the carrier and the waveguide. The higher the refractive index difference, the smaller the radius.
  • the radius is defined as the distance to a central axis at which the intensity of the light has fallen in the radial direction to 1 / e 2 .
  • the intensity has a bell-shaped (Gaussian) distribution in the radial direction perpendicular to the propagation direction.
  • the waveguides are generally designed as single-mode waveguides.
  • the distance is generally preferably more than 2 times the radius of the mode field.
  • a preferably mechanical force acts on the measuring-active side surface, so that a mechanical bending of the carrier is caused, which leads to an asymmetrical change in length of the measuring conductor in relation to the reference conductor.
  • the detection of a mechanical deformation or bending of the carrier with the aid of the evaluation unit is therefore fundamentally provided. From this is then inferred on the deformation causing this measure.
  • the sensor arrangement is designed for example as a strain sensor and the side surface is a mounting surface with which the carrier is mounted in its mounted state on one side of a component to be tested.
  • the attachment takes place via its measuring-active side surface.
  • a mounting unit is provided here for simple assembly, via which the sensor element ment is attached to the component.
  • This mounting unit is, for example, a particular frame-shaped support member in which the sensor element is quasi embedded, wherein the measuring-active side surface protrudes from the frame opening or flush and terminates in the assembled state over the entire surface on the component.
  • the mounting frame has, for example, fasteners.
  • the measuring-active side surface is glued to the component.
  • the sensor element is designed as a vibration sensor, for which purpose the sensor element is fastened in the mounted state only with a fixing end to a component to be tested, so that the sensor element can oscillate at a free end.
  • the assembly is in this case preferably again by means of a mounting unit in which the sensor element is held.
  • a force or pressure sensor is provided by opposing front ends of the sensor element are fixed and a preferably central force on the measuring active side surface leads to the asymmetric elongation.
  • a measuring layer is applied according to a second basic type of execution on the support, on the asymmetric optical Weglen shortung in interaction with the measured quantity to be detected is done indirectly.
  • the interaction of the measured variable with the measuring layer leads to a deformation, in particular a change in length of the measuring layer, which is then transmitted to the carrier.
  • the measuring layer is generally mechanically strong and in particular also materially connected to the carrier.
  • the sensor element is preferably designed as a magnetic field sensor and the measuring layer is a magnetostrictive layer which is deformed in the presence of an external magnetic field to be measured. The measurand to be measured is therefore the magnetic field strength.
  • the measuring layer is preferably a reaction layer, which is designed such that it reacts chemically, biologically or even physically with a substance forming the measured quantity, whereby a change in the optical path length of the measuring conductor in comparison to the reference conductor is brought about.
  • the sensor element is designed as a substance sensor for detecting a substance (gas, molecule ).
  • the optical sensor arrangement forms a miniaturized substance / gas sensor with a monolithic optical chip.
  • the sensor is preferably used both for qualitative and quantitative detection of the measured variable.
  • the measuring layer is designed to be correspondingly sensitive, so that it reacts selectively to the presence of the measured variable, wherein at the same time the intensity of the signal depends on the concentration of the measured variable.
  • this reaction leads to a mechanical deformation of the reaction layer.
  • the reaction layer is in particular a palladium layer and the sensor element is designed as a gas sensor for detecting hydrogen.
  • the effect is exploited that palladium absorbs hydrogen and thereby causes a change in length.
  • other gases / substances can also be measured via the design of suitable reaction layers.
  • the reaction layer is brought very close to the measuring conductor.
  • the distance to the measuring conductor itself is only a maximum of about 10 m to 20 ⁇ .
  • the distance is sufficiently close to interact with the evanescent field.
  • the distance is preferably in the range between 1, 3 and 4 times the radius of the mode field of the light propagating in the waveguide.
  • reaction layers a variety of layers are possible, which are sensitive to a substance / molecule / enzyme .... and integrate this from physical / chemical / biological way, so that the optical property, in particular the refractive index of the reaction layer changes.
  • material is first removed by polishing or grinding on one of the side surfaces of the carrier until the side surface assumes the desired distance from the measurement conductor.
  • polishing light is preferably switched on and off in the sensor element and the light propagation is monitored.
  • the degree of interaction of the polishing with the substrate is monitored by measuring the outgoing interferometer signal.
  • a chemical or biologically active receptor is contained in the reaction layer, which interacts with a molecule to be measured, in particular a so-called ligand molecule, which in turn causes a change in the optical path length.
  • FIGS. show each in schematic representations: 1 shows an optical sensor arrangement with an optical sensor element with integrated optical chip, which is connected to a control and evaluation unit,
  • FIG. 3 is a fragmentary plan view of a carrier with measuring conductor introduced therein and reference conductor, wherein on the one side of the carrier for the formation of the measuring-active side surface, a measuring layer is applied,
  • FIG. 6 shows the sensor element as a pressure or force sensor, in which the
  • the optical sensor arrangement according to FIG. 1 comprises a sensor element 2, which as an optical chip comprises a carrier 4 with waveguide structure 6 mounted thereon.
  • the carrier 4 has a length L in the longitudinal direction 8 and a width B in a transverse direction 10 for this purpose.
  • the longitudinal direction 8 and the transverse direction 10 define a conductor plane in which the waveguide structure 6 is formed.
  • the height of the carrier 4 is in particular less than or equal to the width B.
  • the width of the sensor element 2 is generally approximately in the range of typically 1 to 5 mm.
  • the length is at least about 20 times this width B and is therefore typically about in the range of 20 to 100 mm or even up to 150 mm.
  • the carrier 4 is cuboid in the embodiment, wherein it has two opposite side surfaces 12A, B.
  • the one side surface 12A is in this case a measuring-active side surface, via which a measured variable to be detected acts on the sensor element 2 laterally and thus laterally relative to the waveguide structure 6.
  • a coupling element 14 is arranged, via which in each case an optical fiber 16 is coupled to the waveguide structure 6.
  • the sensor element 2 is connected to a control and evaluation unit 18 via the optical fibers 16. This serves, on the one hand, to generate the light coupled into the sensor element 2 on the input side and to evaluate the output signal S (interference signal) coupled on the output side.
  • the coupled-in light is represented in the figures by a solid arrow and the decoupled signal S by a dashed arrow.
  • the carrier 4 is preferably made of glass or alternatively of an optical crystal or of a transparent crystalline plastic.
  • the waveguide structure 6 is preferably introduced into the glass surface of the carrier 4 by ion exchange.
  • the waveguide structure 6 is applied by a structured coating method, such as a CVD method.
  • a structured coating method such as a CVD method.
  • the waveguide structure 6 is arranged virtually below the surface of the carrier.
  • the waveguide structure 6 on the carrier 4 has two
  • Interferometerarme on namely a measuring conductor 20 and a reference conductor 22. These two conductors 20, 22 therefore form part of the waveguide structure 6.
  • Other waveguides or integrated components - except the subregions for coupling and uncoupling the light in the measuring conductor 20 and the reference conductor 22 - are not incorporated in the carrier 4.
  • the coupled-in light is divided on the input side via a Y-distributor 24 onto these two waveguides 20, 22 and subsequently the two component signals of these waveguides 20, 22 are again combined and supplied to the evaluation unit 18 as interference signal S.
  • Different embodiments of the waveguide structure 6 are shown in Figs. 2A - 2E.
  • FIGS. 2A and 2B each show a waveguide structure for forming a Mach-Zehnder interferometer, and the waveguide structures 6 shown in FIGS. 2C-E are for forming a Michelson interferometer.
  • the measuring principles of these two interferometers are known per se.
  • the signal S is coupled opposite to the injected light and the two waveguides 20, 22 through two opposite Y-manifold 24 are interconnected.
  • the waveguides 20, 22 are guided to a so-called 3x3 coupler, so that the output signal S is output via three output channels, in each case by 120 ° out of phase.
  • an optical fiber 16 is connected via the coupling element 14.
  • the enlarged view according to FIG. 3 shows a variant in which the measuring-active side surface 12A is formed by a measuring layer 28.
  • the measuring layer 28 is preferably only a few 100 nm to a few pm thick and is brought very close to the measuring conductor 20 and preferably of this a distance a1 spaced, which is only in the range of, for example, 10 to 20 ⁇ .
  • the reference conductor 22 has the side surface 12B at a distance a2, which is at most about 100 ⁇ , but at least 20 ⁇ .
  • the measuring conductor 20 is also spaced from the lateral boundary surface by approximately the same distance a2. This lateral boundary surface then immediately forms the measuring-active side surface 12A.
  • FIGS. 4 to 6 show various embodiments in which a mechanical deformation of the sensor element 20 takes place, namely a bending of the carrier 4 about an axis perpendicular to the plane of the conductor.
  • the sensor element 2 is fixed with its measuring-active side surface 12A over the entire surface of a component 30, for example by gluing or by means of a mechanical assembly unit.
  • a bending of the component 30 in the direction of the double arrow 32 leads directly to a bending of the sensor element 2 and thus to an asymmetric change in length between the two waveguides 20, 22nd
  • the sensor element 2 is designed as a vibration sensor and fastened to the component 30 with only one end, here its rear fixing end 34.
  • the front free end 36 can swing freely, so that upon vibration of the component 30, the free end 36 is deflected. In turn, the deflection caused thereby in the signal S due to the asymmetric change in length between the waveguides 20, 22 can be detected.
  • FIG. 6 finally shows an embodiment in the form of a pressure or force sensor in which the opposite ends of the sensor element 2 are replaced by fixing elements. 38 are firmly clamped. These are, for example, parts of a housing of a pressure sensor. If a force is applied to the sensor element 2 in the middle, a mechanical deformation takes place again, which can be detected by the interferometric measuring principle.
  • the measuring layer 28 is a palladium layer and the sensor element 2 is designed overall as an H2 sensor. The effect is based on the fact that the gaseous hydrogen is absorbed by the palladium layer and the
  • Palladium layer expands here, which in turn leads to an asymmetric change in length of the waveguides 20, 22, which is reflected in the signal S.
  • measuring layers 28 are possible.
  • the measuring layers interact in an interaction with the substance to be measured (liquid, gases, molecules ...), such that the optical path length of the measuring conductor 20 is influenced. This can be caused by a temporary mechanical elongation / shortening of the carrier 4 on the measuring-active side surface 12A or alternatively by a temporary change in the optical properties of the carrier 4, in particular the refractive index.
  • the measuring layer 28 is arranged very close to the measuring conductor 20 in order to actually be able to cause an interaction with the light propagating in the measuring conductor 20 by the change in the refractive index.
  • the decoupled signal S (interference signal) is evaluated by the evaluation unit 18, which inferred qualitatively and / or quantitatively on the measured variable, ie either a force or a substance.
  • the different optical path length is first determined from the phase position of the two signal components from the measuring conductor 20 and from the reference conductor 22. From the change in the optical path length is then determined whether and preferably also with what strength the measured variable acts on the measuring-active side surface 12A.
  • the evaluation unit tables or functions The relationships between the change in length and the magnitude of the measured variable, ie the presence of a physical force or a substance, are stored. Decisive here is that the evaluation unit 18 and the electronics contained therein for the evaluation of the signal S, taking into account only one-sided action on the sensor element 2 is formed.

Abstract

L'invention concerne un élément de détection comprenant un support (4) s'étendant dans la direction longitudinale et présentant une structure de guide d'ondes (6), afin de former un dispositif interféromètre monolithique miniaturisé pour la détection d'une valeur de mesure. Pour former un interféromètre, la structure de guide d'ondes (6) comprend un conducteur de référence (22) et un conducteur de mesure (20) qui sont guidés parallèlement l'un à côté de l'autre. Pour détecter la valeur de mesure, l'élément de détection (2) possède une surface latérale (12A) active en mesure sur laquelle agit la valeur de mesure à détecter, de sorte qu'une interaction asymétrique de la valeur de mesure a lieu avec la structure de guide d'ondes (6), le trajet optique du conducteur de mesure (20) variant relativement au conducteur de référence (22). Cette différence de trajet optique est évaluée électroniquement par l'interféromètre.
EP13776716.6A 2012-10-04 2013-10-01 Dispositif de détection optique et procédé permettant de détecter une valeur de mesure au moyen d'un dispositif de détection optique Active EP2904355B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012019407.2A DE102012019407A1 (de) 2012-10-04 2012-10-04 Optische Sensoranordnung sowie Verfahren zur Erfassung einer Messgröße mit Hilfe einer optischen Sensoranordnung
PCT/EP2013/002940 WO2014053234A2 (fr) 2012-10-04 2013-10-01 Dispositif de détection optique et procédé permettant de détecter une valeur de mesure au moyen d'un dispositif de détection optique

Publications (2)

Publication Number Publication Date
EP2904355A2 true EP2904355A2 (fr) 2015-08-12
EP2904355B1 EP2904355B1 (fr) 2021-06-23

Family

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EP13776716.6A Active EP2904355B1 (fr) 2012-10-04 2013-10-01 Dispositif de détection optique et procédé permettant de détecter une valeur de mesure au moyen d'un dispositif de détection optique

Country Status (3)

Country Link
EP (1) EP2904355B1 (fr)
DE (1) DE102012019407A1 (fr)
WO (1) WO2014053234A2 (fr)

Citations (1)

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WO1988005529A1 (fr) * 1987-01-21 1988-07-28 Pfister Gmbh Capteur optique

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DE3701548A1 (de) * 1987-01-21 1988-08-04 Pfister Gmbh Optischer kraftmessensor
ATE71718T1 (de) * 1987-06-04 1992-02-15 Walter Lukosz Optisches modulations- und mess-verfahren.
US6240221B1 (en) 1999-03-29 2001-05-29 Nortel Networks Limited Integrated optical mach zehnder structures
GB0021976D0 (en) * 2000-09-07 2000-10-25 Optomed As Multi-parameter fiber optic probes
US20040208421A1 (en) 2003-04-17 2004-10-21 Alps Electric Co., Ltd. Mach-zehnder interferometer optical switch and mach-zehnder interferometer temperature sensor
EP2310806A2 (fr) * 2008-07-24 2011-04-20 Ramot at Tel-Aviv University Ltd. Capteurs interférométriques à sensibilité améliorée
CN102483427B (zh) * 2009-06-15 2014-11-26 茨瓦内科技大学 Cmos moems传感器器件

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Publication number Priority date Publication date Assignee Title
WO1988005529A1 (fr) * 1987-01-21 1988-07-28 Pfister Gmbh Capteur optique

Non-Patent Citations (1)

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Title
See also references of WO2014053234A2 *

Also Published As

Publication number Publication date
WO2014053234A3 (fr) 2014-08-07
WO2014053234A2 (fr) 2014-04-10
EP2904355B1 (fr) 2021-06-23
DE102012019407A1 (de) 2014-04-10

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