EP2893548A1 - Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière - Google Patents

Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière

Info

Publication number
EP2893548A1
EP2893548A1 EP13773190.7A EP13773190A EP2893548A1 EP 2893548 A1 EP2893548 A1 EP 2893548A1 EP 13773190 A EP13773190 A EP 13773190A EP 2893548 A1 EP2893548 A1 EP 2893548A1
Authority
EP
European Patent Office
Prior art keywords
electron
electrical component
nano
tips
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13773190.7A
Other languages
German (de)
English (en)
Inventor
Hans W. P. Koops
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HaWilKo GmbH
Original Assignee
HaWilKo GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HaWilKo GmbH filed Critical HaWilKo GmbH
Priority to EP13773190.7A priority Critical patent/EP2893548A1/fr
Publication of EP2893548A1 publication Critical patent/EP2893548A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/28—Non-electron-emitting electrodes; Screens
    • H01J19/38—Control electrodes, e.g. grid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/54—Vessels; Containers; Shields associated therewith
    • H01J19/57—Vessels; Containers; Shields associated therewith provided with coatings on the walls thereof; Selection of materials for the coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/24—Dynodes having potential gradient along their surfaces
    • H01J43/246—Microchannel plates [MCP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30488—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30496—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Luminescent Compositions (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

La présente invention concerne des matières nanogranulaires (NGM) qui ont l'extraordinaire capacité de conduire un courant dans une densité de courant de 100 fois comparée à des supraconducteurs à Tc élevée par des charges se déplaçant sous forme de bosons produits par condensation de Bose-Einstein (BEC) dans des états d'orbitale de surface d'exciton se chevauchant à température ambiante et ont une conductivité dépendant de la lumière. La matière est disposée entre des liaisons électroconductrices et est une matière composite nanocristallisée. La présente invention concerne en outre des composants électriques comprenant des NGM et des procédés et des agencements de leur réalisation par dépôt induit par faisceau corpusculaire appliqué à un substrat, l'utilisation de composés inorganiques qui sont adsorbés sur la surface du substrat en raison de leur pression de vapeur et qui fournissent une phase conductrice cristallisée intégrée dans une matrice isolante inorganique renfermant la matière.
EP13773190.7A 2012-09-07 2013-09-06 Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière Withdrawn EP2893548A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP13773190.7A EP2893548A1 (fr) 2012-09-07 2013-09-06 Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12183564 2012-09-07
PCT/EP2013/068420 WO2014037475A1 (fr) 2012-09-07 2013-09-06 Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière
EP13773190.7A EP2893548A1 (fr) 2012-09-07 2013-09-06 Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière

Publications (1)

Publication Number Publication Date
EP2893548A1 true EP2893548A1 (fr) 2015-07-15

Family

ID=46880990

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13773190.7A Withdrawn EP2893548A1 (fr) 2012-09-07 2013-09-06 Matière en matières nanogranulaires (ngm), procédés et agencements de fabrication de ladite matière et composants électroniques comprenant ladite matière

Country Status (5)

Country Link
US (1) US9583298B2 (fr)
EP (1) EP2893548A1 (fr)
CN (1) CN104756221B (fr)
HK (1) HK1210868A1 (fr)
WO (1) WO2014037475A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109939750A (zh) * 2017-12-20 2019-06-28 浙江大学自贡创新中心 一种功能化的微通道板及包含该微通道板的生物分子传感器
EP3762750A4 (fr) * 2018-03-09 2022-04-27 Indian Institute Of Science Bloc supraconducteur, nanocristal supraconducteur, dispositif supraconducteur et procédé associé

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
US6236060B1 (en) * 1997-11-19 2001-05-22 International Business Machines Corporation Light emitting structures in back-end of line silicon technology
WO2009080372A1 (fr) * 2007-12-20 2009-07-02 Abb Research Ltd Élément conducteur électrique en volume

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Publication number Priority date Publication date Assignee Title
US4324854A (en) * 1980-03-03 1982-04-13 California Institute Of Technology Deposition of metal films and clusters by reactions of compounds with low energy electrons on surfaces
JP3953525B2 (ja) * 1996-05-24 2007-08-08 ドイチェ テレコム アクチエンゲゼルシャフト 光子検出器及び光子検出器を製造する方法
JP2000200410A (ja) * 1999-01-07 2000-07-18 Hitachi Ltd 磁気記録媒体、磁気記録媒体の製造方法及び磁気記録装置
US6648711B1 (en) 1999-06-16 2003-11-18 Iljin Nanotech Co., Ltd. Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter
JP4309075B2 (ja) 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
JP3839713B2 (ja) * 2001-12-12 2006-11-01 株式会社ノリタケカンパニーリミテド 平面ディスプレイの製造方法
CN100459164C (zh) * 2002-02-08 2009-02-04 大日本印刷株式会社 有机半导体结构物、其制造方法和有机半导体装置
WO2004014794A2 (fr) 2002-08-07 2004-02-19 Guo-Meng Zhao Nanotubes de carbone supraconducteurs a haute temperature et procedes de fabrication de ces nanotubes
US7521851B2 (en) * 2003-03-24 2009-04-21 Zhidan L Tolt Electron emitting composite based on regulated nano-structures and a cold electron source using the composite
RU2406689C2 (ru) * 2005-04-25 2010-12-20 Смольтек Аб Наноструктура, предшественник наноструктуры и способ формирования наноструктуры и предшественника наноструктуры
US8299419B2 (en) * 2007-01-26 2012-10-30 President And Fellows Of Harvard College Methods, systems, and apparatus for storage, transfer and/or control of information via matter wave dynamics
FR2934705B1 (fr) * 2008-07-29 2015-10-02 Univ Toulouse 3 Paul Sabatier Materiau solide composite electriquement conducteur et procede d'obtention d'un tel materiau
JP2010157490A (ja) * 2008-12-02 2010-07-15 Canon Inc 電子放出素子および該電子放出素子を用いた表示パネル
US7968352B2 (en) * 2009-11-30 2011-06-28 Wise William G Superconductivity based on bose-einstein condensation of electron or electron-hole pairs in semiconductors
CN101859066B (zh) * 2010-06-02 2012-07-04 河南大学 一种基于生物材料表面结构的纳米压印模板及其制备方法
PL218232B1 (pl) * 2010-09-16 2014-10-31 Inst Technologii Materiałów Elektronicznych Pasta przewodząca nanosrebrowa, zwłaszcza do zastosowań wysokoprądowych i wysokotemperaturowych
CN202330728U (zh) * 2011-10-25 2012-07-11 中国科学院西安光学精密机械研究所 一种x射线探测器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
US6236060B1 (en) * 1997-11-19 2001-05-22 International Business Machines Corporation Light emitting structures in back-end of line silicon technology
WO2009080372A1 (fr) * 2007-12-20 2009-07-02 Abb Research Ltd Élément conducteur électrique en volume

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014037475A1 *

Also Published As

Publication number Publication date
WO2014037475A1 (fr) 2014-03-13
HK1210868A1 (en) 2016-05-06
US20150255239A1 (en) 2015-09-10
CN104756221B (zh) 2017-05-03
CN104756221A (zh) 2015-07-01
US9583298B2 (en) 2017-02-28

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