EP2883242A1 - Procédé de fabrication d'un boîtier hermétiquement fermé - Google Patents

Procédé de fabrication d'un boîtier hermétiquement fermé

Info

Publication number
EP2883242A1
EP2883242A1 EP12750530.3A EP12750530A EP2883242A1 EP 2883242 A1 EP2883242 A1 EP 2883242A1 EP 12750530 A EP12750530 A EP 12750530A EP 2883242 A1 EP2883242 A1 EP 2883242A1
Authority
EP
European Patent Office
Prior art keywords
bonding element
temperature
component
container
contact surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12750530.3A
Other languages
German (de)
English (en)
Inventor
Marc Christopher WURZ
Lutz Rissing
Stefan Zimmermann
Philipp COCHEMS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leibniz Universitaet Hannover
Original Assignee
Leibniz Universitaet Hannover
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leibniz Universitaet Hannover filed Critical Leibniz Universitaet Hannover
Publication of EP2883242A1 publication Critical patent/EP2883242A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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    • B81C2203/00—Forming microstructural systems
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    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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Definitions

  • the invention relates to a method for producing a hermetically sealed housing in which there is a negative pressure.
  • micromechanical and micro-optical systems or components are used. These can be designed, for example, as acceleration sensors, yaw rate sensors or micromirrors but also as radiation sources.
  • micromechanical and micro-optical components comprise freely movable microstructures, which are designed, for example, as beams, grids or plates.
  • CONFIRMATION COPY is already made to use as a housing part. By placing two of these structured silicon wafers on top of each other and joining them together, the two wafers form the housing in which the microcomponents are arranged. This is known, for example, from US Pat. No. 6,743,656.
  • the housing consists of the same material as the micro device. If this is not the case, for example because a part of the housing must be transparent for a specific wavelength range of electromagnetic radiation, this method can not be used. From WO 2004/1068665 a method is known for this case, in which a cover substrate, which is connected to the bottom substrate to jointly form the housing, consists of glass. The microcomponents fabricated on a silicon wafer are singulated and placed on a new substrate. There they are contacted and aligned relative to each other and only then introduced into the housing.
  • a housing for one or more micromechanical components which has at least one optical window on one side.
  • the part of the housing which has the window must be produced in a complicated process in which a borosilicate plate is placed on a structured mold and then melted so that it fills the mold. After solidification, this glass plate can be used as a lid wafer and connected to the second wafer.
  • DE 10 2005 011 449 B3 proposes to provide a semiconductor oxide region between two semiconductor components.
  • This has different permeabilities for noble gases at different temperatures.
  • the layer package comprising the two semiconductor components to be connected to one another and the semiconductor oxide layer arranged therebetween is first brought to a first temperature in which the permeability of the semiconductor oxide layer for a noble gas, for example neon, is relatively high. By the duration that this temperature is maintained, it can be adjusted how much of the noble gas diffuses into the housing.
  • the temperature is brought to a second value at which the permeability of the semiconductor oxide layer is significantly reduced. In this state, for example, it can be hermetically sealed from the outside with an additional coating. This process is complicated and therefore costly.
  • the invention is therefore based on the object to propose a method with which hermetically sealed housing can be produced, in which there is a negative pressure.
  • the invention achieves the stated object by such a method, wherein the housing consists of a first component having a first contact surface, which is provided with a layer is coated from a first bonding element, and at least one second component with a second contact surface, which is coated with a layer of a second bonding element, which has a higher soli temperature than the first bonding element is prepared.
  • the method comprises the following steps: a) positioning the first component and the second component in a container, so that the first contact surface of the first component at least partially abuts the second contact surface of the second component, b) generating a negative pressure in the container, c ) Increase a temperature in the container to a connection temperature value. wherein the first bonding element, the second bonding element and the bonding temperature value are selected such that a mixture of the first bonding element and the second bonding element has a liquidus temperature which is above the bonding temperature value.
  • the two components to be joined together are positioned relative to each other so that they are in the optimal alignment with each other for the process. Only then is the vacuum created. Further movement or alignment of the individual components relative to one another is then no longer necessary, so that in particular a complicated handling of the micromechanical components in a vacuum is eliminated. Instead, only the temperature prevailing in the container in which the two components are located, must be changed, in particular increased.
  • the two contact surfaces of the two components are each coated with a bonding element. Since, in method step a), the two components are arranged against one another such that the two contact surfaces at least partly abut one another, the two bonding elements also come into contact with each other.
  • the temperature in the container is increased to the connection temperature value, diffusion processes occur, resulting in a mixture of the materials of the two bonding elements.
  • this mixture has a liquidus temperature that is above the bonding temperature value to which the temperature in the vessel was brought. It is therefore not warm enough in the container to melt the mixture of the two bonding elements, so that it comes to a curing. In this way, the two components that make up the housing are connected together. Again, this is possible without further alignment of the two components to each other, but only happens by increasing the temperature and maintaining the temperature at the predetermined connection temperature value.
  • first and second bonding element By the clever choice of the first and second bonding element, it is thus possible to produce a hermetically sealed housing in that outside the vacuum, the two components to be joined are aligned relative to each other and not further movement and alignment, for example after the generation of the vacuum more is needed. This method is thus fast, easy, inexpensive and accurate.
  • At least one recess is arranged, which is formed such that at least one passage into the housing results in when the first contact surface bears against the second contact surface.
  • the two components are aligned relative to one another, there is at least deepen a passage into the housing. At this moment, therefore, it does not come to a hermetic conclusion of the housing.
  • this passage it is possible through this passage to set the desired pressure within the housing when generating the negative pressure.
  • at least one depression which may be provided in at least one contact surface, this effect can also be achieved by sufficiently rough surfaces of the bonding elements.
  • recesses provided in at least one of the contact surfaces are suitable for this purpose.
  • process step b) consequently, the negative pressure generated in the container is generated by this passage also within the housing.
  • Increasing the temperature in method step c) increases the deformability of the first bonding element, so that recesses or likewise provided roughnesses of the contact surfaces provided in the contact surfaces disappear and a hermetic closure of the housing occurs.
  • the first bonding element and / or the second bonding element preferably has a topography tolerance of between 0.4 ⁇ m and 1 ⁇ m.
  • a topography tolerance is understood as the deviation from the flat, planar surface. Due to the fact that the first bonding element and / or the second bonding element have such a topography tolerance, a hermetic closure does not occur when the two contact surfaces are applied to each other, but rather a multiplicity of small passages form, through which in particular a pressure exchange between the interior of the Housing and the container can take place as long as the temperature was not increased within the container. This can preferably take place in addition to the recess provided in at least one of the two contact surfaces in order to achieve an even better pressure equalization here. Of course, it is also possible, no additional intentional depression in one of the two contact surface chen and make the pressure balance only by the achieved by the topography tolerance micro-passages.
  • both the first bonding element and the second bonding element have a corresponding topography tolerance.
  • the first bonding element is an indium coating.
  • the second bonding element is a gold or a silver coating.
  • indium has proven to be particularly advantageous.
  • other materials such as glass based, may be used.
  • Indium has a relatively low melting point of about 150 ° C.
  • gold which is used as a second bonding element, can be relatively easily dissolved in liquid indium or diffuses rapidly into the liquid indium. As soon as the gold concentration in the liquid indium increases, so does the melting point of this mixture up to a melting point of almost 540 ° C at a gold content of about 33%. Due to the fact that the applied bonding elements are only thin coatings, the gold concentration in the entire indium coating is rapidly compensated for, resulting in a sufficiently homogeneous mixture having a liquidus temperature above the bonding temperature value.
  • the first bonding element and the second bonding element chosen so that the mixture forms a eutectic. It has proven to be particularly advantageous if the compound temperature value is greater than or equal to a eutectic temperature of this mixture.
  • the temperature in the container is maintained at the connection temperature value for a connection duration, wherein the connection duration and the connection temperature value are adapted to a layer thickness of the first bonding element, so that after the connection period, the first bonding element is completely contained in the mixture.
  • This achieves a particularly stable hermetic connection so that there is no longer any phase with a relatively low soliotherm temperature, such as that of the first bonding element.
  • the temperature in the container is raised before increasing it to the connection temperature value to a Ausgaswert, which is smaller than the liquidus temperature of the first bonding element.
  • a Ausgaswert which is smaller than the liquidus temperature of the first bonding element.
  • This outgassing value must be smaller than the solidus temperature of the first bonding element in order to maintain a continuous connection to the interior of the housing.
  • the Outgassing value however, greater than 100 ° C. It can thereby be achieved that, in particular, water contained on the surfaces or in the individual constituents is condemned and withdrawn from the container by the vacuum pump. This is also possible, for example, with the use of indium as the first bonding element without problems.
  • a getter material is advantageously arranged within the housing, which has an activation temperature which is greater than the connection temperature value.
  • the method additionally includes the step of raising the temperature in the container to an activation value that is greater than the activation temperature of the getter material.
  • Activation of the getter material after the hermetic closure of the container prevents the getter material, for example, from absorbing molecules, for example, from the melt of the first bonding element or already during the production of the negative pressure, thus using its absorption capacity for quantities of material which are actually absorbed by the vacuum pump used Container could be withdrawn.
  • the getter material is advantageously activated only when the housing is already hermetically sealed, so that it is ensured that only molecules that occur within the housing, for example by outgassing, can be captured by the getter material.
  • the skillful choice of materials used as the first and second bonding element allows the complete package, including the creation of the vacuum, the hermetic seal and the activation of the getter by going through a single temperature profile. This makes the process simple, fast, easy to reproduce and inexpensive.
  • a recess which is arranged in the first or the second component can advantageously be covered by a cover.
  • a recess or cover for example, is a window which is always necessary when a certain type of radiation is to be conducted into or out of the housing.
  • This can be electromagnetic radiation of almost any desired wavelength, for example infrared, visible light, UV radiation or, for example, electron beams of an electron beam source arranged in the housing.
  • the method described here can be used very flexibly in this case. For example, it is possible to connect the component in which the recess is provided to the cover before the two components are to be connected to form a housing.
  • first and a second bonding element at corresponding contact surfaces with which the respective component in which the recess is located comes into contact with the cover.
  • Which bonding element is arranged on which component to be connected is of course irrelevant.
  • the same bonding elements used which is also used for the connection of the two housing-forming components In this way, the two components to be connected and the cover must be positioned only once relative to each other in the container before generating the vacuum. However, this is done outside the vacuum and is thus easy and accurate. The container is then closed and evacuated so that the desired negative pressure prevails. Further movement or alignment of the individual components or the cover relative to one another is no longer necessary with the method presented here.
  • a hermetic sealing of the housing can be achieved by the method according to the invention, as can not be achieved, for example, by using most adhesives.
  • ceramic components can be connected to each other, which is not possible by the very common in the art anodic bonding. This method also has the disadvantage that it can lead to water releases that jeopardize the pressure prevailing in the housing vacuum.
  • the component to be enclosed in the housing is advantageously arranged in method step a).
  • This can be, for example, an electron source or a micromechanical or micro-optical component.
  • an upper and a lower component are connected together.
  • the upper component corresponds to the first component, which in the method described here is a silicon oxide component.
  • Its contact surface was coated with a chromium-based adhesion promoter with a Layer thickness of about 1000 A coated.
  • a gold layer with a thickness of about 500 A was applied. This can be done, for example, by vapor deposition or sputtering. Subsequently, an indium layer was vapor-deposited on the gold layer thus produced.
  • the indium is the first bonding element which was applied in the process described here in a layer thickness of 25,000 A and was enclosed by a further gold layer in a thickness of 500 A in order to counteract an oxidation of the indium.
  • the topography tolerance of this layer was 0.6 pm.
  • the second component consists of a silicon substrate, which has also been coated with a chromium-based adhesion promoter. Again, a layer of about 1000 A thickness was evaporated. Then, as a second bonding element, a gold layer was sputtered to a thickness of approximately 20 000 A, the topography tolerance being less than 1 ⁇ m, namely in the specific case 0.6 ⁇ m.
  • the two bonding elements expand so far that the interior, which is located between the components to be connected within the housing, could be evacuated.
  • the temperature for the Ausgaswert about 200 ° C were used.
  • the container in which the components to be connected are evacuated.
  • the temperature to the connection temperature value in this case about 300 ° C, heated.
  • gold diffuses from the gold layer used as a second bonding element into the indium layer on the first component.
  • the gold layer used as a second bonding element acts as a reservoir, from which flows in the course of the bonding process gold in the indium region and there connects with the indium to the eutectic.
  • FIG. 1 shows the schematic temperature profile as a function of time in a method according to an exemplary embodiment of the present invention
  • FIG. 2 two components to be connected
  • FIG. 3 shows two components oriented relative to one another
  • Figure 5 two interconnected components with activated animals.
  • FIG. 1 shows a schematic view of a temperature profile of the temperature T in a container in which the method is carried out according to this embodiment of the present invention.
  • the temperature level is at room temperature 2.
  • the components to be joined together are aligned relative to each other and the vacuum is generated within the container.
  • the temperature T is brought to a Ausgaswert 6 at a first temperature increase 4.
  • the temperature T is kept for a Ausgasdauer 8.
  • impurities are outgassed and removed and, for example, any water present evaporated.
  • a second temperature increase 10 takes place, during which the temperature T is brought to a connection temperature value 12.
  • the temperature is held for a connection period 14.
  • the connection between the two bonding layers occurs. elements.
  • the temperature is increased to an activation value 18 that is greater than an activation temperature of a getter material that is arranged in the housing.
  • Figure 2 shows the situation before the start of the method according to an embodiment of the present invention. It can be seen a first component 20, which forms the lower part of a housing 22 in the illustrated embodiment. Opposite a second component 24 is arranged, which is to be connected to the first component 20.
  • the first component 20 has a first contact surface 26, which is coated with a first bonding element 28.
  • the second component 24 has a second contact surface 30, which is coated with a second bonding element 32.
  • a getter material 34 is arranged in order to be able to maintain a negative pressure to be reached in the housing 22 as long as possible.
  • FIG. 3 shows the situation after the positioning of the first component 20 and of the second component 24 relative to one another. This corresponds to the situation after method step a). It can be seen that the first bonding element 28 and the second bonding element 32 abut one another. In the enlarged section, it can be seen that a passage 36 is present between the second bonding element 32 and the first bonding element 28, so that access into the interior of the housing 22 is possible.
  • the passage 36 is achieved by structuring in the surfaces of the first bonding element 28 and the second bonding element 32. In this case, the different bonding elements 28, 32 rest on one another or against each other in other areas. A separate holder, in particular of the second component 24 is thus not required.
  • FIG. 4 shows the situation after the temperature T in the container for the connection duration 14 has been kept at the connection temperature 12.
  • a mixture 38 of the two materials is now located between the first component 20 and the second component 24.
  • intermetallic compounds having a significantly higher melting point than the indium used as first bonding element 28 are obtained.
  • the getter material 34 which is located in the now hermetically sealed housing 22, has not yet been activated in the situation shown in FIG.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un boîtier (22) hermétiquement fermé dans lequel règne une dépression, en partant d'une première partie (20) comportant une première surface de contact (26) qui est enduite d'une couche d'un premier élément liant (28), et d'au moins une deuxième partie (24) comportant une deuxième surface de contact (30) qui est enduite d'une couche d'un deuxième élément liant (32) qui présente une température de solidus plus élevée que celle du premier élément liant (28), le procédé présentant les étapes suivantes : a) positionnement de la première partie (20) et de la deuxième partie (24) dans un récipient de telle manière que la première surface de contact (26) de la première partie (20) soit au moins partiellement en contact avec la deuxième surface de contact (30) de la deuxième partie (24), b) production d'une dépression dans le récipient, c) élévation d'une température (T) dans le récipient à une valeur de température d'assemblage (12), le premier élément liant (28), le deuxième élément liant (32) et la valeur de température d'assemblage (12) étant choisis de telle manière qu'il se forme un mélange (38) du premier élément liant (28) et du deuxième élément liant (32) qui présente une température de liquidus qui est supérieure à la valeur de température d'assemblage (12).
EP12750530.3A 2012-08-10 2012-08-10 Procédé de fabrication d'un boîtier hermétiquement fermé Withdrawn EP2883242A1 (fr)

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US10115716B2 (en) * 2015-07-18 2018-10-30 Semiconductor Components Industries, Llc Die bonding to a board
US9847310B2 (en) 2015-07-18 2017-12-19 Semiconductor Components Industries, Llc Flip chip bonding alloys
GB201604453D0 (en) * 2016-03-16 2016-04-27 Element Six Uk Ltd Assembly for synthesis of a superhard material
CN108529550B (zh) * 2018-04-28 2019-12-20 北京航天控制仪器研究所 基于晶圆键合工艺的圆片级封装mems芯片结构及其加工方法

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US6452238B1 (en) 1999-10-04 2002-09-17 Texas Instruments Incorporated MEMS wafer level package
DE10324731A1 (de) 2003-05-31 2004-12-16 Braun Gmbh Verfahren und Schaltungsanordnung zur Detektion eines Füllstands einer Flüssigkeit
EP1575084B1 (fr) * 2004-03-01 2010-05-26 Imec Procédé pour déposer un matériau de soudure sur un substrat
DE102005001449B3 (de) 2005-01-12 2006-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen eines vorgegebenen Innendrucks in einem Hohlraum eines Halbleiterbauelements
US8288211B2 (en) * 2005-08-26 2012-10-16 Innovative Micro Technology Wafer level hermetic bond using metal alloy with keeper layer
DE102007002725A1 (de) 2007-01-18 2008-07-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse für in mobilen Anwendungen eingesetzte mikromechanische und mikrooptische Bauelemente
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