Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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  • B22—CASTING; POWDER METALLURGY
  • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
  • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
  • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
  • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
  • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
  • C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/64—Burning or sintering processes
  • C04B35/645—Pressure sintering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
  • C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23B—TURNING; BORING
  • B23B2226/00—Materials of tools or workpieces not comprising a metal
  • B23B2226/12—Boron nitride
  • B23B2226/125—Boron nitride cubic [CBN]
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23B—TURNING; BORING
  • B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
  • B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
  • B23B27/148—Composition of the cutting inserts
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  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/38—Non-oxide ceramic constituents or additives
  • C04B2235/3817—Carbides
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  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/38—Non-oxide ceramic constituents or additives
  • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
  • C04B2235/3856—Carbonitrides, e.g. titanium carbonitride, zirconium carbonitride
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/38—Non-oxide ceramic constituents or additives
  • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/38—Non-oxide ceramic constituents or additives
  • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/38—Non-oxide ceramic constituents or additives
  • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
  • C04B2235/3886—Refractory metal nitrides, e.g. vanadium nitride, tungsten nitride
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  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
  • C04B2237/32—Ceramic
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  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
  • C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
  • C04B2237/582—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different additives
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  • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
  • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
  • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
  • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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  • Y10T428/23—Sheet including cover or casing
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Y10T428/31678—Of metal

Definitions

• the present disclosure relates to a polycrystalline boron cubic nitride (PcBN) body. More specifically, the present disclosure relates to a PcBN body that is fabricated using a process of overlaying layers of cubic boron nitride (cBN) powder or pre-compacted disks, where the layers have cBN mixed with various concentrations of a ceramic.
• PcBN polycrystalline boron cubic nitride
• a substrate is adjacent to a PcBN layer that is made from a single grade (i.e., cBN is the primary material in the layer) in its entirety. Because of desired and often competing characteristics in the grade, optimizing for one characteristic, such as for example toughness, may result in the degradation of another characteristic, such as for example brazing stability or wear resistance. [0005]Accordingly, there is a need for an improved PcBN fabrication process that produces a PcBN body with the desired characteristics, without degrading one or more of the desired characteristics in order to further another.
• This disclosure describes an improved PcBN fabrication process and the PcBN body created using the improved process.
• a process includes depositing, in a refractory capsule, the following: a substrate (e.g., with cobalt (Co)), cubic boron nitride (cBN), and a mixture of cBN and a ceramic.
• a substrate e.g., with cobalt (Co)
• cBN cubic boron nitride
• the deposited cBN and the mixture of cBN and ceramic may be a powder or a pre-compacted disk.
• the deposited substrate, cBN, and the mixture of cBN and ceramic being the content of the refractory capsule.
• the concentration of cBN in the layer with the mixture of cBN and ceramic is lower than the concentration of cBN in the layer that is deposited below it.
• a high pressure and high temperature is applied to the content of the refractory capsule.
• HPHT high pressure and high temperature
• the Co, for example, of the substrate first diffuses across the cBN layer, i.e., the cBN layer is swept by the Co.
• the Co may also sweep across the layer with a mixture of cBN and ceramic.
• the content is deposited in the reverse order, beginning with the mixture of cBN and a ceramic, the cBN, and the substrate (e.g., with cobalt (Co)).
• the concentration of cBN in the layer with the mixture of cBN and ceramic is lower than the concentration of cBN in the layer that is deposited above it.
• HPHT is applied to the content of the refractory capsule.
• the Co for example, of the substrate sweeps across the cBN layer.
• the Co may also sweep across the layer with a mixture of cBN and ceramic.
• a polycrystalline cubic boron nitride (PcBN) body is prepared by a process that includes the following steps. Depositing, in a refractory capsule, a substrate (e.g., with cobalt (Co)), cubic boron nitride (cBN), and a mixture of cBN and a ceramic. The deposited cBN and the mixture of cBN and ceramic may be a powder or a pre-compacted disk. After depositing the content, then applying a high pressure and high temperature (HPHT) to the content of the refractory capsule.
• a substrate e.g., with cobalt (Co)
• cBN cubic boron nitride
• HPHT high pressure and high temperature
• the concentration of cBN in the layer with the mixture of cBN powder and ceramic powder is lower than the concentration of cBN in the layer that is deposited below it.
• the Co, for example, of the substrate diffuses across the cBN powder.
• the Co may also sweep across the layer with a mixture of cBN and ceramic.
• the deposition of the content is applied in the reverse order, beginning with the mixture of cBN and a ceramic, the cBN, and the substrate (e.g., with cobalt (Co)).
• the process yields a PcBN body having layers with various concentrations of cBN and a ceramic material (i.e., distinct PcBN layers).
• the desired characteristics of the resulting PcBN body may be controlled by adjusting the concentration of the cBN and the ceramic material in each of the PcBN layers adjacent to the substrate.
• FIG. 1 shows a cross-section, by a 60x scanning electron microscope (SEM), of an unpolished PcBN body fabricated using the disclosed process.
• FIG. 2a shows a cross-section, by a 60x SEM, of a polished PcBN body fabricated using the disclosed process.
• FIGs. 2b-e show multiple cross-sections, by a 1000x SEM, of various layers and inter-layer interfaces of a polished PcBN body fabricated using the disclosed process.
• FIGs. 2f-g show refractory capsules (cups) that may be used to hold deposited content in accordance with some embodiments.
• FIG. 3a shows a graph of Ti K fluorescent x-ray intensity generated using an energy dispersive x-ray (EDX) spectroscopy line-scan of a PcBN body fabricated using the disclosed process.
• EDX energy dispersive x-ray
• FIG. 3b shows a graph of Co K fluorescent x-ray intensity generated using an energy dispersive x-ray (EDX) spectroscopy line-scan of a PcBN body fabricated using the disclosed process.
• EDX energy dispersive x-ray
• FIG. 4 shows a flow diagram of steps of an improved process of fabricating a PcBN body.
• FIG. 5 shows a flow diagram of steps of another improved process of fabricating a PcBN body.
• embodiments are directed to a process for fabricating a polycrystalline cubic boron nitride (PcBN) body, that substantially obviates one or more problems due to limitations and disadvantages of the related art by improving brazing characteristics of the PcBN body using various concentrations of cBN powder and ceramic powder across different layers of the stack.
• PcBN polycrystalline cubic boron nitride
• FIG. 1 shows an EDM cut cross-section of an unpolished PcBN body 101 fabricated using an improved process.
• the cross-section shows the resulting material after HPHT sintering.
• a cemented carbide (WC/Co) substrate 102 there is a layer of cBN 103 (a high cBN material), and an adjacent mixture layer of cBN and ceramic 104 (a low cBN material).
• the layer of cBN 103 has a lower concentration of a ceramic than the low cBN layer 104.
• the process for fabricating the unpolished PcBN body 101 includes depositing, in a refractory capsule, the following: a substrate 102, a cubic boron nitride (high cBN) powder, and a mixture layer of cBN and ceramic powders (low cBN), then applying a high pressure and high temperature (HPHT) to the content of the refractory capsule.
• a substrate 102 include metallic cobalt (Co), cemented carbide (WC/Co), cermet ((W,Ti)(C,N)/(Co,Ni), silicon (Si), or nickel (Ni).
• the deposited layer of the high cBN and the low cBN layers may be powders or pre-compacted disks.
• pre-compacted disks also known as a pre-sintered bodies
• pre-compacted disks also known as a pre-sintered bodies
• the refractory capsule may be formed from a tantalum (Ta) or molybdenum (Mo) foil sheet/wrap, or any other grade IV-VI transition metal.
• a tantalum refractory capsule (cup) are shown in FIGs 2f-g.
• FIG. 2f illustrates a tantalum metal container (cup) with a non- crimped top.
• FIG. 2g illustrates a tantalum refractory capsule (cup) with a crimped top.
• the concentration of cBN in the low cBN powder is lower than the concentration of the high cBN powder.
• the ceramic powder may include, for example, titanium nitride (TiN) or aluminum oxide (AI 2 O 3 ) or Ti 2 AIN.
• TiN titanium nitride
• AI 2 O 3 aluminum oxide
• Ti 2 AIN titanium nitride
• Other ceramics may also be used without departing from the scope of the embodiments described.
• ceramics such as AIN, TiC, TiCN, ZrN, Zr0 2 , HfO 2 , or any other grade IV-VI transition metal like Me (C,N,O) may be used.
• the high cBN powder has a high cBN content of approximately 90%, for example.
• the layer 103 contains approximately 90% cBN and approximately 10% of some other material(s), which may include the ceramic.
• the cBN layer 103 may also include a relatively low concentration of approximately 10%, for example, of a ceramic such as TiN or AI2O3.
• the low cBN layer 104 may have a cBN content of approximately 50%, for example.
• the layer 104 may also include a relatively high concentration of approximately 50%, for example, of a ceramic such as TiN or AI2O3.
• the Co of the substrate 102 first diffuses across the cBN powder layer 103, and then, in some embodiments, diffuses across the mixture of cBN powder and ceramic powder layer 104.
• two inter-diffusion layers may be formed. A first inter-diffusion layer between the substrate 102 and high cBN layer 103, and a second inter- diffusion layer between the high cBN layer 103 and the low cBN layer 104.
• substrate material e.g., Co
• substrate material e.g., Co
• the process yields a PcBN body having layers with various concentrations of cBN and a ceramic material (i.e., distinct PcBN layers).
• the desired characteristics of the resulting PcBN body may be controlled by adjusting the concentration of the cBN and the ceramic material in each of the PcBN layers adjacent to the substrate layer 102.
• the high cBN layer 103 has an approximately 86-99% volume of cBN, and an 88-96% volume of cBN, as well as a metallic binder with a ceramic content of approximately 2-8%.
• the low cBN layer 104 has an approximately 35-85% volume of cBN, and a binder of ceramic character after HPHT.
• a first amount corresponding to a thickness of a layer of a substrate 102 may be, for example, approximately between 0.0 and 8 mm.
• a second amount corresponding to a thickness of a high cBN layer 103 may be, for example, approximately between 0.3 and 3.2 mm, and between approximately 0.5 and 1 .0 mm.
• a third amount corresponding to a thickness of a low cBN layer 104 may be, for example, approximately between 0.2 and 3.2 mm, and between 0.3 and 1 .0 mm.
• FIG. 2a shows a cross-section, using a scanning electron microscope (SEM) at 60x, of a polished PcBN body 201 fabricated using the improved process.
• the polished PcBN body 201 has a first WC/Co cemented carbide substrate layer 202, a second high cBN layer 203, and a third low cBN layer 204.
• the carbide substrate layer 202 (not shown in its entirety) has a thickness of approximately 4 mm.
• the second layer of cBN powder 203 has a thickness of approximately 0.6 mm.
• the third low cBN layer 204 has a thickness of approximately 0.4 mm.
• the polished PcBN body 201 was fabricated using the process described earlier. After HPHT the body 201 was EDM cut, and the cross section polished in order to enhance microscopy.
• Polishing was accomplished by using standard metallographic methods.
• FIGs. 2b-e show multiple cross-sections, at a higher magnification of 1000x in the SEM, of various layers and inter-layer interfaces of a PcBN body
• Fig. 2b shows the substrate 202 -high cBN layer 203 interface 205;
• Fig. 2c shows the second layer 203 at high4er magnification 206;
• Fig. 2d shows the high cBN layer 203 - low cBN layer 204 interface 207; and
• Fig. 2e shows the low cBN layer 204 at higher magnification 208.
• the substrate 202 has a visible light contrast (see Fig. 2b), which is due to its WC and Co content.
• the second layer 203 is shown in higher magnification 206 in Fig 2e.
• the dark grains are cBN and the light contrast in the binder phase is due to interdiffused Co from the substrate, also known as sweep.
• the third layer 204 is shown in higher magnification 208. Dark grains are cBN and the gray phase is the ceramic binder with no Co interdiffusion. Both the substrate layer
• FIGs. 2f-g show refractory capsules (cups) 210 that may be used to hold deposited content in accordance with some embodiments.
• Fig. 2f illustrates a refractory capsule 210 made of tantalum and having a non-crimped top.
• Fig. 2g illustrates a refractory capsule made of tantalum and having a crimped top.
• refractory capsule types than Fig. 2f or Fig. 2g may be used without departing from the scope of the embodiments.
• FIG. 3a shows a graph of Ti K fluorescent x-ray intensity generated using energy dispersive x-ray (EDX) spectroscopy of a PcBN body fabricated using the disclosed process.
• the graph 301 is a line-scan (along the white line 302) of the PcBN body qualitatively illustrating the concentration of Ti across the depth of the PcBN body.
• the line-scan 301 was taken from the top to the bottom along the white line 302.
• Ti which may be bound as ceramic TiN, does not show any evidence of diffusing, as the second-to-third layer interface 303 corresponds to the open arrow on the graph 301 .
• the presence of TiN in the third layer 204 is for increasing the PcBN layer's chemical stability and strengthening the PcBN body for its use, for example, as a cutting tool in hard part turning applications.
• the higher cBN content in the second layer 203 gives the material higher toughness and hardness.
• FIG. 3b shows a graph 305 of Co K fluorescent x-ray intensity generated using energy dispersive x-ray (EDX) spectroscopy of a PcBN body fabricated using the disclosed process.
• the graph 305 is a line-scan of the PcBN qualitatively illustrating the concentration of cobalt (Co), across the depth of the PcBN body.
• the line-scan 306 is taken from the top to the bottom along the white line 305.
• Co metal from the substrate 202 has enriched at the first interface 308 between the substrate layer and the second layer, and diffused through the second layer 203 across the interface 308 but not past the second interface 307 into the third layer 204.
• FIG. 4 shows a flow diagram 400 of steps 401 -404 of an improved process of fabricating a polycrystalline cubic boron nitride (PcBN body).
• the process includes: depositing, in a refractory capsule, a first amount of a substrate 401 ; depositing, in the refractory capsule, a second amount of at least cubic boron nitride (cBN) 402; depositing, in the refractory capsule, a third amount of a mixture of cBN and ceramic 403; and applying a high pressure and high temperature (HPHT) to a content of the refractory capsule 404, where a first concentration of cBN in the third amount is lower than a second concentration of cBN in the second amount, and where, upon applying HPHT, Co of the substrate first diffuses across the second amount of at least the cBN, and then diffuses across the third amount of the mixture of cBN and ceramic.
• HPHT high pressure and high temperature
• FIG. 5 shows a flow diagram 500 of steps 501 -504 of another improved process of fabricating a PcBN body.
• the process includes: depositing, in a refractory capsule, a first amount of a mixture of cubic boron nitride (cBN) and ceramic 501 ; depositing, in the refractory capsule, a second amount of at least cBN 502; depositing, in the refractory capsule, a third amount of a substrate 503; applying a high pressure and high temperature (HPHT) to a content of the refractory capsule, where a first concentration of cBN in the first amount is lower than a second concentration of cBN in the second amount, and where, upon applying HPHT, Co of the substrate first diffuses across the second amount of at least the cBN, and then diffuses across the first amount of the mixture of cBN and ceramic 504.
• the advantage here is that the refractory capsule does not require an extra tantalum (Ta) layer as a lid.

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• 2013
  • 2013-06-28 KR KR1020157000586A patent/KR102125590B1/ko active IP Right Grant
  • 2013-06-28 WO PCT/US2013/048666 patent/WO2014011420A1/en active Application Filing
  • 2013-06-28 US US13/931,065 patent/US20140017435A1/en not_active Abandoned
  • 2013-06-28 JP JP2015521649A patent/JP6377057B2/ja not_active Expired - Fee Related
  • 2013-06-28 EP EP13739547.1A patent/EP2872274A1/de not_active Withdrawn
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