EP2839523A1 - Verfahren zur herstellung einer photovoltaischen dünnschicht mit einem heteroübergang - Google Patents

Verfahren zur herstellung einer photovoltaischen dünnschicht mit einem heteroübergang

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Publication number
EP2839523A1
EP2839523A1 EP13717287.0A EP13717287A EP2839523A1 EP 2839523 A1 EP2839523 A1 EP 2839523A1 EP 13717287 A EP13717287 A EP 13717287A EP 2839523 A1 EP2839523 A1 EP 2839523A1
Authority
EP
European Patent Office
Prior art keywords
mixture
crosslinking
solvent
compounds
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13717287.0A
Other languages
English (en)
French (fr)
Inventor
Olivier Dautel
Lionel DERUE
Aurel DIACON
Pietrick HUDHOMME
Bertrand Pavageau
Guillaume WANTZ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite dAngers
Universite Montpellier 2 Sciences et Techniques
Universite des Sciences et Tech (Bordeaux 1)
Rhodia Operations SAS
Ecole Nationale Superieure de Chimie de Montpellier ENSCM
Institut Polytechnique de Bordeaux
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite dAngers
Universite Montpellier 2 Sciences et Techniques
Universite des Sciences et Tech (Bordeaux 1)
Rhodia Operations SAS
Ecole Nationale Superieure de Chimie de Montpellier ENSCM
Institut Polytechnique de Bordeaux
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR1253645A external-priority patent/FR2989835B1/fr
Priority claimed from FR1258904A external-priority patent/FR2996062B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Universite dAngers, Universite Montpellier 2 Sciences et Techniques, Universite des Sciences et Tech (Bordeaux 1), Rhodia Operations SAS, Ecole Nationale Superieure de Chimie de Montpellier ENSCM, Institut Polytechnique de Bordeaux filed Critical Centre National de la Recherche Scientifique CNRS
Publication of EP2839523A1 publication Critical patent/EP2839523A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/311—Purifying organic semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a process for the preparation of a heterojunction-type photovoltaic thin film, of the type implementing a deposit on a support of a composition comprising a first organic semiconductor C P , of the donor type. electron, and a second organic semiconductor C N , electron acceptor type, then phase segregation.
  • the method of the invention is a particular method of this type, which allows, more specifically, access to a thermal stabilization of the layer produced.
  • heterojunction photovoltaic thin film Various methods for the preparation of a heterojunction photovoltaic thin film (bulk or bulk heterojunction) are known, in particular based on mixtures of fullerene derivatives and polythiophene derivatives. It is also well known that obtaining good yields with this type of thin layer requires obtaining phase domains of the order of the diffusion length of the excitons which are photogenerated in each of the materials (less than 40 nm typically).
  • An object of the present invention is to provide an effective method for thermally stabilizing heterojunction photovoltaic thin films of the aforementioned type.
  • the present invention proposes the use of particular crosslinking agents in the synthesis medium, namely compounds bearing azide functional groups, typically intermolecular crosslinking agents bearing at least two azide functional groups (alternatively, as described above).
  • all or part of the organic semiconductors modified with azide functional groups may be functionalized, in which case the presence of a single azide function by modified semiconductor is sufficient to ensure the crosslinking), and to delay crosslinking effect of the azide functions up to the moment of phase segregation (typically by programming this crosslinking of the azide functions just at the moment when the phase segregation takes place), in particular by employing the crosslinking agents at a sufficiently low temperature beforehand.
  • the mixture M thus produced is deposited on all or part of the surface of a support and the phase segregation is carried out, by raising the temperature during or after this phase segregation and / or by subjecting the reaction medium to a UV radiation of wavelength adapted to be placed under conditions where the crosslinking additive reacts to form covalent bonds with at least a portion of the organic semiconductors, whereby a crosslinking within the Photovoltaic thin layer realized.
  • step (E2) is added to this mixture M the remainder of organic semiconductors, previously modified by grafting azide functions and optionally a solvent, under conditions of sufficiently low temperature to inhibit the precipitation by crosslinking of one and / or the other of the two organic semiconductors with the crosslinking additive during step (E2), so as to forming a mixture M comprising the semiconductors C P and C N , part of which is modified by azide functions in a solvent adapted to phase segregation; then
  • the steps (E1) and (E2) are generally distinct, but the process may alternatively comprise the steps (E1) and (E2) fused in a single step of preparing the mixture M by mixing the semiconductor assembly (functionalized and non-functionalized) in a suitable solvent.
  • the organic semiconductors whether or not the steps (E1) and (E2) are merged, act as crosslinking agents in the step (E3). ).
  • These organic semiconductors previously modified by grafting azide functional groups are preferably organic C n semiconductors functionalized with at least one group carrying at least one azide function.
  • compounds known as [60] PCB-C3-N3 or [60] PCB-C6-N3 obtained by hydrolysis of PCBM to the corresponding acid PCBA can be used as semiconductors carrying azide groups (for English "[6,6] -phenyl-C 6 -butyric acid"), especially according to the procedure described in J. Org. Chem. 60, pp. 532-538 (1995), then esterification of the PCBA obtained respectively with HO- (CH 2 ) 3 -N 3 or with HO- (CH 2 ) 6 -N 3 , typically according to the routes described below:
  • the inventors have now demonstrated that the crosslinking additive used in steps (E2) and (E3) makes it possible to ensure a thermal stabilization of the photovoltaic properties of the thin layer.
  • the use of the additive under the conditions of steps (E2) and (E3) makes it possible to reduce or even inhibit the formation of crystals (microcrystals of PCBM, typically) that the it is observed otherwise when the photovoltaic layer is subjected to high temperatures, typically above 100 ° C., for example around 150 ° C.
  • the crosslinking additive used according to the invention allows more generally to avoid the degradation of the photovoltaic properties of the thin layer when it is subjected to high temperatures of the aforementioned type.
  • the additive even allows, on the contrary, an improvement of the photovoltaic properties when it is subjected to a heat treatment, as is illustrated in the examples given at the end of the present description. Without wishing to be bound to a particular theory, it seems possible to be argued that this stabilization is explained by the fact that the crosslinking agent fixes, in a way, the structure obtained by phase segregation.
  • the method of the invention leads in particular to a stabilization of the photovoltaic efficiency of the coating, which is reflected in particular by an increase in the power conversion efficiency (PCE) and the fill factor (FF, namely "FUI Factor” in English) photovoltaic devices implementing a photovoltaic coating as obtained according to the invention
  • PCE power conversion efficiency
  • FF fill factor
  • the method of the present invention can be used with a very large number of organic semiconductors.
  • C N any electron acceptor material known to have such properties, which may for example be selected from the following compounds:
  • fullerenes and fullerene derivatives such as C60, C70, PCBM (also called “PC 60 BM” or, more precisely, PC61 BM, of formula [6,6] -phenyl-C 6 methyl butyrate) ), and PC 71 BM (of formula [6,6] -phenyl-C 7 methylbutyrate, which is sometimes referred to, more improperly, as "PC 70 BM”);
  • PCBM also called “PC 60 BM” or, more precisely, PC61 BM, of formula [6,6] -phenyl-C 6 methyl butyrate
  • PC 71 BM of formula [6,6] -phenyl-C 7 methylbutyrate
  • PCNEPV poly [oxa-1,4-phenylene- (1-cyano-1,2-vinylene) - (2-methoxy-5- (3,7-dimethyloctyloxy) -1,4-phenylene) -1,2 - (2-cyanovinylene) -1,4-phenylene); and poly (styrene sulfonate) (PSS).
  • the derivatives of fullerenes in particular PC 6- BM ([6,6] -phenyl-C 6 -methylbutyrate), or the PC 71 BM ([6,6] -phenyl-C 7 methylbutyrate) above, are particularly suitable as the semiconductor organic compound C N according to the present invention. These derivatives are particularly well crosslinked in the context of the process of the invention, which prevents their subsequent recrystallization, which results in increased thermal stability compared to photovoltaic coatings based on unstabilized fullerenes according to the present invention.
  • organic semiconductor compound C P it is possible to use, in the context of the present invention, any material known to have a P type semiconductor character.
  • organic semiconductor compound C P is an organic polymer. conjugate preferably selected from the following compounds:
  • polythiophene derivatives such as P3HT (Poly [3-hexylthiophene-2,5-diyl]);
  • PPV polyphenylenevinylene
  • MDMO-PPV poly [2-methoxy-5- (3,7-dimethyloctyloxy) -1,4-phenylenevinylene]
  • MEH-PPV poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene]
  • low bandgap also called third-generation semiconductor polymers, including derivatives known as "push-pu / structure, such as PCDTBT.
  • Polythiophene derivatives such as P3HT (Poly [3-hexylthiophene-2,5-diyl]), P3BT (Poly [3-butylthiophene-2,5-diyl]), P30T (Poly [3-octylthiophene] 2,5-diyl]) or else P3DT (Poly [3-decylthiophene-2,5-diyl]) are particularly suitable as the semiconductor organic compound C P in the process of the present invention.
  • the organic semiconductor compounds (C N and C P ) which are used in the context of the present invention may also be chosen from conjugated aromatic molecules containing at least three aromatic nuclei, optionally fused.
  • Organic semiconductor compounds of this type may for example comprise 5, 6 or 7 conjugated aromatic rings, preferably 5 or 6. These compounds may be monomers as well as oligomers or polymers.
  • the invention is also well adapted to the particular pair of semiconductor organic compounds according to:
  • the use of the crosslinking agent according to the invention generally makes it possible to crosslink the compound of type C N (PCBM or similar) during step (E3), which makes it possible to achieve a particularly effective stabilization of the photovoltaic properties of the thin layer produced (this crosslinking in particular inhibits the natural tendency that fullerenes have and their derivatives to crystallize).
  • the molar ratio of crosslinking agent / semiconductor C N is less than 2, more preferably less than 1, in particular less than 0.5, for example less than or equal to 0.25.
  • the inventors have demonstrated that with a low ratio in these ranges, the thermal stabilization effect is particularly pronounced and inhibits the recrystallization phenomena of fullerenes which take place in the absence of crosslinking agent.
  • the introduction of the crosslinker does not affect the photovoltaic performance of the thin layer, and this particularly with a ratio in the aforementioned ranges.
  • a fullerene derivative of the PCBM type when used as a C N semiconductor and a polythiophene derivative such as P3HT as a C P semiconductor, it can for example be used in the step (E1) one or more solvents selected from chlorobenzene, dichlorobenzene (o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene), trichlorobenzene, benzene, toluene, chloroform, dichloromethane, dichloroethane, xylenes (especially ortho-xylene), ⁇ , ⁇ , ⁇ -trichlorotoluene, methylnaphthalene (1-methylnaphthalene and / or 2-methylnaphthalene), chloronaphthalene (1-chloronaphthalene and / or 2-chloronaphthalene).
  • the crosslinking agent may be introduced into step (E2) in the form of a solution
  • the solvent employed in step (E1) (and, where appropriate in step (E2)) comprises at least one or more xylene (s), for example ortho-xylene .
  • the crosslinking agent is typically introduced during step (E2) in the form of a solution, in a solvent that is identical or different to that of the mixture M1 prepared in step (E1).
  • solvent as used in the present description with reference to steps (E1) and (E2) denotes a single solvent or, most often, a mixture of several solvents (also called “solvent system”).
  • the phase segregation can be obtained by any means known per se, for example by a heat treatment (by annealing for example) and / or drying, in particular under solvent vapor (which allows slow down the kinetics of drying to allow the mixture to relax), for example according to the method known as "solvent annealing".
  • a heat treatment by annealing for example
  • solvent vapor which allows slow down the kinetics of drying to allow the mixture to relax
  • the steps (E1), (E2) and (E3) are conducted under the following conditions: (E1) preparing the first mixture M1 comprising, in the solvent medium S1, the organic semiconductor C P and the second organic semiconductor C N ,
  • (E2) is added to this mixture M1 the crosslinking additive in the form of a mixture M2 comprising the additive in a second solvent medium S2, whereby a mixture M is obtained comprising a solvent S including the solvent S1 and the optional solvent S2, where the solvent S of the mixture M is constituted by a mixture of:
  • a first fraction F1 consisting of a solvent or mixture of solvents having a boiling point lower than that of compounds C P and C N and which is capable of solvating the two compounds C P or C N ;
  • a second fraction F2 miscible with the first fraction, consisting of a solvent or mixture of solvents which has a boiling point greater than that of fraction F1 and less than that of compounds C P and C N and which is capable of to selectively solvate one of the compounds C P or C N but not the other (ie incapable of solvating respectively C N or C P ), this addition being operated under conditions of sufficiently low temperature to inhibit the crosslinking of the one and / or of the other of the two organic semiconductors by the crosslinking agent during step (E2),
  • (E3) is deposited on all or part of the surface of a support the mixture M thus produced and is removed by evaporation of the solvent S present in the deposit thus produced, and is carried, simultaneously or subsequently, the medium at a sufficient temperature to ensure crosslinking.
  • fraction F1 more volatile than fraction F2 evaporates first, which leads to an enrichment in phase F2 in the solvent medium of the deposit produced, which makes the solvent medium less and less capable of solvating the compound that the fraction F 2 is not capable of solvating. It follows a desolvation of at least a part of one of the compounds C P or C N proper to lead to a demixing phenomenon of this compound, the other compound (respectively C N or C P ) remaining instead, first, in a solvated form, taking into account the presence of a sufficient amount of S1 fraction in the medium, not yet evaporated.
  • step (E3) it is only in a second phase of step (E3) that all of the solvents are evaporated, to leave as a coating a mixture of compounds C N and C P substantially free of solvent.
  • the solid coating obtained on the support has a specific morphology at the nanoscale, having a high contact interface. between the compounds C N and C P.
  • step (E2) is conducted at a temperature below the temperature leading to the crosslinking (typically at a temperature below 50 ° C, more preferably below 40 °, or even 30 ° C). Typically, the temperature is then increased, only after the step (E2), beyond the temperature at which the crosslinking operates.
  • step (E3) can be carried out by exposing the mixture to UV radiation, typically radiation at 254 nm, with or without (and preferably without) temperature rise.
  • UV radiation typically radiation at 254 nm
  • step (E1) generally requires hot dissolution (above 60 ° C in general) to form the mixture M1. Following this hot mix, it is essential to cool the medium before implementing the mixture of step (E2).
  • step (E2) has the advantage of being able to be conducted at room temperature, which is of significant economic interest when the process is used on an industrial scale.
  • the crosslinking agent employed in step (E2) is an agent which also provides a role of texturing agent during the formation of the layer in the step ( E3).
  • the crosslinking agent is a compound which, in addition to carrying azide groups, has a selective solvent character of one of the compounds C P or C N and not of the other.
  • the method is conducted under the following conditions:
  • the solvent S1 is a solvent medium having a boiling point lower than that of the compounds C P and C N and which is capable of solvating these two compounds C P or C N ;
  • crosslinking agents that may be used according to this specific embodiment, mention may notably be made of:
  • -Ra- is a linear or branched hydrocarbon chain, saturated or unsaturated, preferably linear, Ra being preferably an -alkyl- or -alkenyl- group, advantageously comprising from 2 to 18 carbon atoms;
  • -Rb- is a linear or branched hydrocarbon chain, saturated or unsaturated, preferably linear, Ra being preferably an -alkyl- or -alkenyl- group, advantageously comprising from 1 to 18 carbon atoms,
  • step (E2) are compounds which, to the knowledge of the inventors, have never been described. They constitute, in another aspect, a specific object of the present invention.
  • crosslinking agents may in particular be used for the production of coating based on a mixture of PCBM / P3HT type semiconductors, where they may be used with a solvent S1 of the type recommended for carrying out the depositing this mixture of polymers of this type, well known in itself.
  • the subject of the present invention is the supports provided with a photovoltaic coating of the type obtained (that is to say obtained or obtainable) according to the method described above in the present description.
  • the subject of the invention is the use of the method of the invention for producing photovoltaic cells.
  • the photovoltaic coating is generally deposited on an anode (generally an anode transparent to visible radiation, for example ITO, advantageously a layer of ITO deposited on a plastic sheet).
  • the anode may be pre-coated with a layer of conductive material.
  • a thin layer of photovoltaic nature according to the invention is deposited (by implementing steps (E1), (E2), and (E3)), then a cathode is deposited on the photovoltaic coating (for example in the form a metal overlay, for example an aluminum overlay).
  • the method of the invention can be implemented to perform both devices using the extraction of holes or the extraction of electrons by the lower and upper electrodes (direct or inverse devices).
  • PCBM [6,6] -phenyl-C 6 methylbutyrate
  • 1, 10-diazidodecane of formula N 3 - (CH 2 ) 10 -N 3 synthesized according to the method described in J. Am. Chem. Soc., Vol. 127, pp.12434- 12435 (2005), or
  • a solution S 'of BPN was made in ODCB at a concentration of 20 mg / mL in BPN.
  • the ink 1 is deposited in the form of a thin film on a glass plate.
  • the deposit was made by spin coating at 2000 rpm, with 5 seconds of acceleration and 60 seconds at 2000 rpm.
  • the deposit was made using a freshly prepared mixture. In this regard, it should be noted that the deposition must be carried out in the minutes following the mixing of the solutions S and S '.
  • Example 2 Production of a crosslinked photovoltaic coating (N 3 - (CH 2 ) 10 -N 3 )
  • a solution S 'of N 3 - (CH 2 ) 10 -N 3 in ODCB at a concentration of 20 mg / ml of N 3 - (CH 2 ) 10 -N 3 was made .
  • the ink 2 is deposited in the form of a thin film on a glass plate.
  • the deposit was made by spin coating at 2000 rpm, with 5 seconds of acceleration and 60 seconds at 2000 rpm.
  • Example 3 Making a crosslinked photovoltaic coating
  • the ink 3 is deposited in the form of a thin film on a glass plate.
  • the deposit was made by spin coating at 2000 rpm, with 5 seconds of acceleration and 60 seconds at 2000 rpm.
  • the deposit was made using a freshly prepared mixture. In this regard, it should be noted that the deposition must be carried out in the minutes following the mixing of the solutions S and S '.
  • Example 1 The coatings made in Examples 1 to 3 were subjected to a heat treatment at 150 ° C. and the evolution of their structure was studied over time by optical microscopy. By way of comparison, the same experiment was carried out with a coating produced under the conditions of Example 1 but without adding solution S 'to solution S.
  • a photovoltaic cell was made using the coating made according to Example 1; and these cells were taken at ⁇ ⁇ ' ⁇ , where the evolution of the yield over time was studied and the time t was noted at 80% at the end of which the yield drops by 80%.
  • the results obtained are shown in the table below:
  • Example 6 Production of a crosslinked photovoltaic coating
  • This example describes the preparation of coating based on [60] PCB-C3-N3 or [60] PCB-C6-N3), which were obtained according to identical protocols.
  • the 3-azidopropan-1-ol and 6-azidohexan-1-ol used are prepared by reaction of NaN 3 with commercial 3-bromopropan-1-ol and 6-bromohexan-1-ol, according to procedures described respectively in J. Mater. Chem. flight. 22, pp. 1100-1106 (2012) and J. Med. Chem. flight. 54, pp. 7363-7374 (201 1).
  • PCBM 40 mg were dissolved in 1 ml of ODCB (ortho-dichlorobenzene), bringing the mixture to 60 ° C with stirring (hot plate), so as to obtain a second mother solution S2.
  • ODCB ortho-dichlorobenzene
  • the ink 6 is deposited in the form of a thin film on a glass plate.
  • the deposit was carried out by spin coating at 1000 rpm, with 1 second of acceleration and 60 seconds at 1000 rpm.
  • the deposit was made using a freshly prepared mixture. In this regard, it should be noted that the deposit must be made within minutes of mixing the solutions.
  • Example 6 The coatings made in Example 6 were subjected to a heat treatment at 150 ° C. and the evolution of their structure was studied over time by optical microscopy.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
EP13717287.0A 2012-04-20 2013-04-19 Verfahren zur herstellung einer photovoltaischen dünnschicht mit einem heteroübergang Withdrawn EP2839523A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1253645A FR2989835B1 (fr) 2012-04-20 2012-04-20 Procede de preparation d'une couche mince a caractere photovoltaique a heterojonction
FR1258904A FR2996062B1 (fr) 2012-09-21 2012-09-21 Procede de preparation d'une couche mince a caractere photovoltaique a heterojonction
PCT/EP2013/058207 WO2013156609A1 (fr) 2012-04-20 2013-04-19 Procédé de préparation d'une couche mince à caractère photovoltaïque à hétérojonction

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EP2839523A1 true EP2839523A1 (de) 2015-02-25

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US10910439B1 (en) * 2016-12-21 2021-02-02 Government Of The United States As Represented By The Secretary Of The Air Force Efficient interconnecting layer for tandem solar cells
KR102065710B1 (ko) * 2018-05-17 2020-01-13 한국교통대학교 산학협력단 많은 가교 작용기를 가지는 아지드 유형의 가교제
CN108832004B (zh) * 2018-06-14 2021-08-03 南京邮电大学 一种消除钙钛矿电池滞后现象的界面修饰方法

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