EP2805570A1 - Dispositif à composants optoélectroniques - Google Patents

Dispositif à composants optoélectroniques

Info

Publication number
EP2805570A1
EP2805570A1 EP13702371.9A EP13702371A EP2805570A1 EP 2805570 A1 EP2805570 A1 EP 2805570A1 EP 13702371 A EP13702371 A EP 13702371A EP 2805570 A1 EP2805570 A1 EP 2805570A1
Authority
EP
European Patent Office
Prior art keywords
optoelectronic
group
optoelectronic component
components
component device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13702371.9A
Other languages
German (de)
English (en)
Inventor
Bernhard Siessegger
Hubert Maiwald
Marijan Kostrun
Philip E. Moskowitz
Warren P. Moskowitz
Norwin Von Malm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram GmbH
Original Assignee
Osram GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram GmbH filed Critical Osram GmbH
Publication of EP2805570A1 publication Critical patent/EP2805570A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B47/00—Circuit arrangements for operating light sources in general, i.e. where the type of light source is not relevant
    • H05B47/10—Controlling the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B44/00—Circuit arrangements for operating electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/20—Controlling the colour of the light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/395—Linear regulators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40—Details of LED load circuits
    • H05B45/44—Details of LED load circuits with an active control inside an LED matrix
    • H05B45/48—Details of LED load circuits with an active control inside an LED matrix having LEDs organised in strings and incorporating parallel shunting devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/50—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits
    • H05B45/58—Circuit arrangements for operating light-emitting diodes [LED] responsive to malfunctions or undesirable behaviour of LEDs; responsive to LED life; Protective circuits involving end of life detection of LEDs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40—Testing power supplies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/44—Testing lamps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/64—Testing of capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H02M1/4258—Arrangements for improving power factor of AC input using a single converter stage both for correction of AC input power factor and generation of a regulated and galvanically isolated DC output voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • Optoelectronic component device provided.
  • a redshift can often be perceived and desired.
  • the redshift is due to a change in the
  • LED light emitting diodes
  • LED for example, by means of the current intensity through the LED and / or the duty cycle of the LED (pulse width)
  • the LED chains may have one or more, the same or different LED chips. At the same time the light of
  • the first LED chain has a higher color temperature than the second LED chain.
  • the current through the first LED string is reduced, while at the same time the current through the second LED string is increased.
  • the current is then reduced again by the LED chain with a low color temperature, ie the current through both LED chains is low.
  • the maximum current through the LED strings is not present at the same time, i.
  • the LED lighting could emit light at a higher intensity than it actually does. Due to the nature of the driving of the LED chains, however, the possibility of higher light intensity is not used, as a result of which the LED chips of the LED chains are not optimally used.
  • At least two LED chains, one driver per LED chain and a control unit for the driver are required for this method of color-variable LED lighting.
  • dimmable, color-changeable LED lights can be more cost-intensive than LED lights without
  • Optoelectronic component device provided, with which it is possible in a technically simple manner to realize a dimmable, color variable LED lighting with little circuit complexity.
  • a group of optoelectronic components can also be understood to mean a pixel and / or a cluster of a plurality of optoelectronic components in each case.
  • an optoelectronic component can be understood as a component emitting electromagnetic radiation.
  • an optoelectronic device may be a semiconductor device emitting electromagnetic radiation and / or as an electromagnetic
  • electromagnetic radiation emitting diode as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • the radiation may, for example, be light in the visible range, UV light and / or infrared light.
  • light emitting diode light emitting diode
  • organic light emitting diode organic light emitting diode
  • Component may be part of an integrated circuit in various embodiments. Furthermore, a
  • emitting electromagnetic radiation can emit
  • a cycle may be understood to mean a period of, for example, a point-symmetrical and / or mirror-symmetrical geometric functions be, for example, a vibration similar to or equal to a sine function, cosine function.
  • the geometric function may be phase-shifted and / or modulated with further geometric functions, for example superimposed.
  • Optoelectronic component device comprising: a first group of optoelectronic components having at least one first optoelectronic component, wherein the
  • optoelectronic components having at least one second optoelectronic component, wherein the at least one, second optoelectronic component for providing
  • phase dimmer electromagnetic radiation of a second color valence is set up; and a phase dimmer, wherein the phase dimmer is arranged such that a first operating mode with a first degree of dimming and a second
  • phase dimmer the first group of optoelectronic devices and the second group
  • optoelectronic components such that in the first operating mode, a first region of optoelectronic components of the optoelectronic component device is energized and in the second operating mode, a second
  • Color valence in the first operating mode is smaller than in the second operating mode and the proportion of electromagnetic Radiation of the second color valence in the first operating mode is greater than in the second operating mode.
  • Optoelectronic device device is provided, smaller in the intensity of the
  • the second area is the second area
  • optoelectronic components such that the second region has at least one of the following differences with respect to optoelectronic components that provide electromagnetic radiation: a
  • the turn-on time i. the time within which the operating voltage is applied to the groups of optoelectronic components, too short for
  • the second group of optoelectronic components can no longer provide electromagnetic radiation in the de-energized state. As a result, for example, the second region of the energized optoelectronic components less
  • phase dimmer of the optoelectronic component device can be set up such that the first group of optoelectronic components and the second group of optoelectronic components such
  • the first group of optoelectronic components can still provide electromagnetic radiation, while the second group of optoelectronic components no electromagnetic
  • Phase control and / or phase control section of the optoelectronic devices be set up.
  • the first group is selected from:
  • optoelectronic components at least one
  • Optoelectronic device more or less than the second group of optoelectronic devices.
  • the first group is selected from:
  • Optoelectronic devices about twice as many or about half as many optoelectronic devices
  • the first group is selected from:
  • Optoelectronic components are electrically connected upstream of the second group of optoelectronic components.
  • the first group is selected from:
  • Optoelectronic component and / or the second group of optoelectronic components a series circuit, a parallel circuit and / or a combination of
  • Device device be configured such that the second optoelectronic devices, the first
  • Component device may be configured such that the number of optoelectronic components and thus the surface of the optoelectronic component device from which electromagnetic radiation is provided,
  • the size of the light field decreases with increasing dimming.
  • the luminous field can have a planar coherent geometric shape, for example a circle, a rectangle, a polygon or the like.
  • the first group is selected from:
  • Optoelectronic components are concentrically surrounded by the second group of optoelectronic devices. As a result, the luminous area can decrease with increasing degree of dimming from outside to inside.
  • the second group is selected from:
  • Optoelectronic components are concentrically surrounded by the first group of optoelectronic devices. As a result, the luminous area can decrease with increasing degree of dimming from the inside to the outside.
  • the first group
  • Optoelectronic devices and / or the second group of optoelectronic devices have one of the following arrangements: star-shaped, circular, rectangular, polygonal, arbitrary.
  • the optoelectronic device in one embodiment, the optoelectronic
  • Components of the first group and / or the second group have a concentric arrangement, for example in the form of rings, triangles, circles, cylinders, rectangles, cuboids, ellipses or similar geometric figures.
  • the first color valence may have a different color locus than the second color valence.
  • the first color valence may have a higher correlated color temperature than the second color valence
  • the optoelectronic device in one embodiment, the optoelectronic
  • Component device further comprise at least a third group of optoelectronic components having at least one, third optoelectronic component.
  • Optoelectronic components and / or the second group of optoelectronic components are Optoelectronic components and / or the second group of optoelectronic components.
  • the third group
  • Optoelectronic devices provide electromagnetic radiation with a third Farbvalenz.
  • the third color valence can have a correlated color temperature whose value is formed between the first color valence and the second color valence.
  • the third group of optoelectronic components can be set up such that the optoelectronic properties of the electromagnetic radiation that is provided by the third group of optoelectronic components,
  • the optoelectronic device has properties of the first group of optoelectronic device and / or the second group of optoelectronic device, for example, an increase and / or decrease in the relative proportion of the electromagnetic radiation, which is provided by the at least one, third optoelectronic device.
  • the optoelectronic device for example, an increase and / or decrease in the relative proportion of the electromagnetic radiation, which is provided by the at least one, third optoelectronic device.
  • Component device to be set up as a dimmable lighting, wherein the color valency of the provided
  • electromagnetic radiation is converted when dimming from the first color valence to the second color valence.
  • Figure 1 is a tabular overview of the light output
  • Figure 2 is a diagram of the relationship between
  • Figure 3 shows an embodiment of a circuit of a
  • Optoelectronic component device according to various embodiments.
  • Figure 4 shows an embodiment of a circuit of a
  • Optoelectronic component device according to various embodiments.
  • Figure 5 shows an embodiment of a circuit of a
  • Optoelectronic component device according to various embodiments.
  • Figure 6 shows a concrete embodiment of a
  • Optoelectronic component device according to various embodiments.
  • Figure 7 shows a concrete embodiment of a
  • FIG. 8 shows a concrete embodiment of a dimmable optoelectronic component device according to various embodiments.
  • Fig.l shows a tabular overview of the light output of an optoelectronic component device, according to various embodiments.
  • Optoelectronic components can be used for the optoelectronic component device.
  • Component device is provided, depending on the phase angle (in unit degrees) of the dimming. As a relative proportion of light, the average
  • Luminous intensity can be understood during a cycle of an optoelectronic component with respect to the total provided light intensity of the optoelectronic
  • An optoelectronic component device may have a plurality of groups of optoelectronic components, wherein the optoelectronic components in a common
  • electrical circuit are arranged, for example, have a common power source.
  • the optoelectronic components can be configured, for example, as light emitting diodes (light emitting diode).
  • Components can be bridged by means of an electrical switch.
  • the switch should be designed such that the on-time by means of the average amplitude of
  • Input voltage can be adjusted.
  • the on-switching time can be understood as the time in which the electrical switch of a group of optoelectronic components is opened and an electrical current flow through the group of optoelectronic components can take place.
  • Such an electrical switch for bridging can be, for example, a triac, a transistor, for example a MOSFET, a thyristor or a similar electronic Component, such as a circuit or an integrated circuit with a similar function.
  • the optoelectronic components themselves do not need to be directly bypassed, for example when the groups of optoelectronic components have energy stores, for example capacitors.
  • the electromagnetic waves are not need to be directly bypassed, for example when the groups of optoelectronic components have energy stores, for example capacitors.
  • radiation provided by an opto-electronic device may be partially modulated significantly at twice the frequency of the input voltage.
  • Components may be, for example, an AC voltage, for example, be a rectified AC voltage.
  • the mean amplitude of the input voltage can be any suitable amplitude.
  • phase control for example by means of a phase control
  • a concrete embodiment for the control of the groups of optoelectronic components can, for example, similar or equal to one of the embodiments of a
  • the different groups of optoelectronic components can thus be used together and with a phase dimmer
  • phase angle Phi can be understood to be the angular interval in one half cycle of the input voltage, while no voltage is applied to the groups of the optoelectronic components by means of the dimmer.
  • the phase angle may have an amount in a range of about 0 ° to about 180 °.
  • phase angle of about 0 ° can be considered as undimmed
  • phase angle of about 180 ° can be understood as being maximally dimmed.
  • Maximum dimming may be understood as being similar to or equivalent to an open switch electrically connected in series with the group of dimmed optoelectronic devices.
  • Electromagnetic radiation may be dependent on the configuration of the circuit, such as the phase dimmer, for example, the number of optoelectronic devices in the group and the color valence of
  • phase angles of 45 ° (108), 90 ° (110) and 135 ° (112) the absolute intensities of the electromagnetic radiation are shown, i. the light intensity in the unit lumens, that of the individual groups 102, 104, 106
  • the relative proportion of electromagnetic radiation provided by the first group increases from
  • the electromagnetic radiation 114 provided by the optoelectronic component device provides the electromagnetic radiation 114 provided.
  • the relative proportion of the electromagnetic radiation provided by the second group 106 is reduced from approximately 18% to approximately 0% during phase dimming, ie when the phase angle is increased. In other words, with regard to the increase in the phase angle, the relative proportion of the light intensity of the
  • the relative proportion can refer to the total, provided at a phase angle of the optoelectronic component device, electromagnetic radiation.
  • Device device i. the opposite behavior of the first group and second group can, by means of a suitable choice of the phase control and / or
  • Phase section control (see descriptions of Figure 3 to Figure 5) can be realized.
  • the relative proportion of the electromagnetic radiation of the third group 104 provided may have properties of the first group 102 and / or of the third group 104, that is, with regard to the light intensity between the first group 102 and the second group 106.
  • the proportion of the electromagnetic radiation of the third group 104 provided can be increased by means of increasing the
  • An optoelectronic component can, for example
  • Strahlers or Planck 'see radiator for example in a range of about 1000 K to about 8000 K, for example about 2500 K to about 6000 K,
  • the different groups of optoelectronic components can have optoelectronic components of the same and / or different design.
  • Optoelectronic components may be formed, for example, as inorganic LEDs, for example GaN diodes, InGaN diodes or InGaAlP diodes.
  • two or more light emitting diodes may be used.
  • two or more light emitting diodes may be used.
  • Have converter element for example a
  • Two or more light-emitting diodes may, for example, have the same or different design.
  • two or more light emitting diodes may be used
  • a substance can be understood as the luminescent material, which converts lossy electromagnetic radiation of one wavelength into electromagnetic radiation of a different wavelength, for example longer
  • the energy difference from absorbed electromagnetic radiation and emitted electromagnetic radiation may be expressed in phonons, i. Heat, be converted and / or by emission of
  • electromagnetic radiation having a wavelength as a function of the energy difference.
  • a phosphor can be Ce-doped garnets such as
  • YAG Ce and LuAG, for example, (Y, Lu) 3 (Al, Ga) 5O12: Ce; eu
  • doped nitrides for example CaAlSi 3: Eu,
  • Orthosilicates for example (Ba, Sr) 2S104: Eu;
  • Chlorosilicates Chlorosilicates, chlorophosphates, BAM
  • Phase angle 108 may be optoelectronic devices
  • the at least one group of optoelectronic components for example the third group 106, which provides little light at high phase angle 112, with respect to FIG.
  • provided electromagnetic radiation of the same group at high phase angles 112 may have optoelectronic devices that can provide electromagnetic radiation with a high color temperature.
  • the optoelectronic device in one embodiment, the optoelectronic
  • correlated color temperature in a range of about 1000K to about 8000K.
  • the optoelectronic device in one embodiment, the optoelectronic
  • Components for example the first group 102,
  • the second group 104 provide electromagnetic radiation with a correlated color temperature in a range of about 3500 K to about 8000 K, for example about 4500 K; and the third group 106,
  • Color temperature provide in a range of about 2000 K to about 8000 K, for example, about 3500 K.
  • a glow for example, similar or the same the glow when dimming a tungsten light bulb can be realized.
  • Component device can optoelectronic devices with other color temperatures, for example, 5500 K, and a fourth group and / or further groups of optoelectronic devices, for example, with another
  • spectral color for example, a spectral color or other color location.
  • Component device may be the opto-electronic
  • Component device having an energy storage, such as a capacitor.
  • Color temperature 202 provided electromagnetic radiation as a function of the phase angle 204 for a
  • the course of the color locus as a function of the dimming level, dimming level, or the phase angle can be seen.
  • the color locus with the phase angle that is to say in the course of the dimming, can be changed from the first color valence 212 to the second color valence 210.
  • Changing the color location in the course of dimming can be continuous, for example, continuous,
  • Optoelectronic component device for example the circuit, the phase dimmer and / or the type of the optoelectronic components can be correlated by means of the method described above in Fig.l for the selection of the correlated
  • Phase angles that is, at a high degree of dimming, are formed during phase dimming, for example, similar or equal to glowing of the provided electromagnetic radiation when dimming
  • FIG. 3 shows an embodiment of a circuit of a
  • FIG. 300 is a schematic view of a
  • the driver structure 304 may, for example, a
  • Rectifier circuit 404 and a regulator circuit 406 have. Further details regarding the components of the driver structure 304 can be found in the description of FIG.
  • the driver structure 304 may, according to various aspects
  • Embodiments at least partially be configured as a phase dimmer 304 or be understood as a phase dimmer 304.
  • the illumination structure 306 may include one or more switches 308 and one or more groups of opto-electronic
  • the illumination structure 306 can have any number of groups of optoelectronic components.
  • Each group of optoelectronic components 310, 318, 320, 322 can have any number of optoelectronic components and / or electrical resistances.
  • the groups of optoelectronic components 310, 318, 320, 322 may have an equal or different number
  • the switches 308 may for this purpose be electrically connected to the driver structure 304, for example by means of a Regulator line 312. Furthermore, the at least one
  • Switch 308 to be electrically connected to at least one group of optoelectronic devices 310.
  • the groups of optoelectronic components 310 can be connected by means of a first chain line 314 and a second chain line 314
  • Chain line 316 may be electrically connected, wherein the first chain line 314 has a different electrical potential
  • Component device may be the circuit for operating the optoelectronic devices similar or equal to a circuit without energy storage (zero energy storage ZES) set up, for example, similar or equal to the embodiment shown in view 400 of a circuit diagram.
  • a node K can be understood as an electrical equipotential, for example as an electrical line with a constant
  • electrical potential can be connected to the plurality of electrical and / or electronic components.
  • View 400 shows a circuit with a voltage source 302; a rectifier circuit 404; a regulator circuit 406; a current monitoring circuit 412 having resistors R50 and R51; a chain of optoelectronic devices with a large number of groups optoelectronic Devices 410-1, 410-2, 410-3, 410-n and a plurality of switch circuits 408-1, 408-2, 408-3, 408-n.
  • the voltage source 302 may be connected to the node K1 and the node K2.
  • the resistor R50 (shunt) may be connected to the node K5 and the node K10.
  • the resistor R51 may be connected to the node K8 and the node K10.
  • the first group of optoelectronic components 410-1 may be connected on the input side to the node K3 and in the forward direction on the output side to the node K12-1.
  • the second group of optoelectronic components 410-2 can be connected on the input side to the node K12-1 and in the forward direction on the output side to the node K12-2.
  • the third group of optoelectronic components 410-3 may be connected on the input side to the node K12-2 and in the forward direction on the output side to the node K12-3.
  • the n-th group of optoelectronic components 410-n can be connected on the input side to the node K12-n and in the forward direction on the output side to the node K10.
  • the further groups of the switch circuits of the further groups of optoelectronic components can be connected to the nodes K12-3 and the node K12-n (not shown).
  • the further high-voltage diode of the further regulator protection circuit of the further groups of the switch circuits may be connected to the node K9 (not shown).
  • Each of the switch circuits 408-1, 408-2, 408-3, 408-n may be connected in parallel with at least one group of opto-electronic devices 410-1, 410-2, 410-3, 410-n.
  • each of the switch circuits 408-1, 408-2, 408-3, 408-n may be associated with at least one group
  • optoelectronic devices 410-1, 410-2, 410-3, 410-n are examples of optoelectronic devices 410-1, 410-2, 410-3, 410-n.
  • a group of optoelectronic components 410-1, 410-2, 410-3, 410-n can have at least one optoelectronic component, for example two or more optoelectronic components.
  • An optoelectronic component can be, for example, a light-emitting diode, for example an organic and / or
  • Group and / or different groups may have the same or different design, for example, provide electromagnetic radiation with a different color valence and / or other optical
  • Wavelength converter or similar.
  • Group / n optoelectronic components may be densely packed, for example, be arranged side by side. This allows the electromagnetic radiation
  • the groups of optoelectronic components 410-1, 410-2, 410-3, 410-n may, for example, be arranged partially in a common package and / or in a common housing. The stream to operate the multitude of groups
  • Optoelectronic devices 410-1, 410-2, 410-3, 410-n may be provided by a voltage source 302.
  • the voltage source 302 may, for example, as a
  • AC power source 302 for example, a power grid, and / or be configured to provide an AC voltage.
  • the voltage source 302 may also be configured as a DC power source 302, for example a battery 302 or the like.
  • the circuit 400 may include a rectifier 404 and / or a rectifier circuit 404 configured to rectify the
  • Component device 304, 306 have.
  • the rectifier circuit 404 may be connected to the AC power source 302
  • AC voltage source 302 may provide AC voltage to rectifier circuit 404.
  • the rectifier 404 may comprise, for example, a plurality of electronic components, for example diodes, for example D52, D53, D54 and D55, and / or a
  • the rectifier 404 may be similar or equal to one
  • conventional rectifier circuit 404 for rectifying alternating current for example, similar or equal to a bridge rectifier 404, a
  • Half-wave rectifier 404 and / or a
  • Midpoint rectifier 404 In the case of a
  • a rectifier circuit 404 may be optional.
  • the diode D52 is connected to the node K2 by means of the anode and to the node K3 by means of the cathode;
  • the diode D53 is connected to the node Kl by means of the anode and to the node K3 by means of the cathode;
  • the diode D54 is connected to the node K5 by means of the anode and to the node K2 by means of the cathode;
  • the diode D55 is connected to the node K5 by means of the anode and to the node K1 by means of the cathode.
  • the regulator circuit 406 may include a supply voltage circuit 405, a voltage reference circuit 430 with the resistors R52 and R53, a voltage negative feedback circuit 432 with the resistor R56, a
  • the resistor R52 may be connected to the node K5 and the node K7.
  • the resistor R53 may be connected to the node K3 and the node K7.
  • the resistor R56 may be connected to the node K6 and the node K7.
  • the operational amplifier U50 may be connected to the input for the positive supply voltage to the node K6 and the other input for the supply voltage to the node K5.
  • the inverting input of the operational amplifier U50 may be connected to the node K8 and the non-inverting input to the node K7.
  • the output of operational amplifier U50 may be connected to node K9.
  • the supply voltage for the operational amplifier circuit 436 may be provided by means of a supply voltage circuit 405.
  • the supply voltage circuit 405 may include a
  • Resistor R54 a Zener diode D50, a diode D51, a capacitor C50, and a switch, such as a MOSFET M50 have.
  • the resistor R54 may be connected to the node K3 and the node K4.
  • the capacitor C50 may be connected to the node K5 and the node K6.
  • the diode D50 may be connected to the node K4 at the cathode and to the node K5 at the anode.
  • the diode D51 may be connected to the anode to the node K3 and to the cathode to the drain terminal of the MOSFET switch M50.
  • the MOSFET switch M50 may have its gate connected to node K4, its source connected to node K6, and its drain connected to the cathode of diode D51. These devices may be coupled to the output of rectifier circuit 404, ie node K3 and node K5, and have a low DC voltage,
  • the capacitor C50 can additionally with the
  • Supply voltage input of the operational amplifier U50 be coupled and thereby provide the supply voltage for the operational amplifier U50.
  • Resistors R 52 and R 53 of voltage reference circuit 430 are provided in a voltage divider arrangement with a terminal, such as a tap, between resistor R52 and resistor R53. This terminal may be coupled to the non-inverting input of operational amplifier U50 as a voltage reference signal.
  • the output of the current monitoring circuit 412 may be representative of the current flowing through the plurality of groups of opto-electronic devices 410-1, 410-2, 410-3, 410-n, and may above the resistor R51.
  • the output of the current monitoring circuit 412 may be coupled to the inverting input of the operational amplifier U50. This allows the current entering the regulator circuit 406 to be monitored so that the regulator circuit 406 can limit the total current flow through the groups of the opto-electronic devices 410-1, 410-2, 410-3, 410-4. n flows.
  • the current monitoring circuit 412 may also be used to monitor the current input of the battery
  • Operational amplifier U50 be formed in combination with an active feedback (active feedback).
  • active feedback active feedback
  • the current flow through the optoelectronic components in the multiplicity of groups of optoelectronic components 410-1, 410-2, 410-3, 410-n can be regulated such that the current flow through the optoelectronic components approximately follows the input current that originates from the voltage source 302 is provided.
  • the current flow in the circuit 400 can be ensured.
  • the current flow can be adjusted, for example, by adjusting the regulator signal in the regulator circuit 406.
  • the frequency stabilization circuit 434 may comprise a capacitor C51 and a resistor R55, which may be coupled to the output of the operational amplifier U50, ie the output signal of the regulator circuit 406.
  • the resistor R55 may be connected to the capacitor C51 and the
  • the capacitor C51 may be connected to the resistor R55 and the
  • Vibrations in the output signal of the regulator circuit 406 can be reduced and / or prevented.
  • Circuit 405 may be coupled to an input of the supply voltage of the operational amplifier U50.
  • the voltage negative feedback circuit 432 may include a
  • Resistor R56 which is between the input of
  • Input of the operational amplifier U50 is arranged.
  • This arrangement can compensate for voltage drops in the rectifier circuit 404 and the power factor
  • the op amp circuit 436 may compensate for the current flowing through the plurality of groups
  • opto-electronic devices 410-1, 410-2, 410-3, 410-n flows and the reference voltage signal, which is provided by the voltage reference circuit 430 form.
  • the current through the groups of optoelectronic components 410-1, 410-2, 410-3, 410-n can be determined, for example, by means of the current through the resistor R51 of the current monitoring circuit 412.
  • Optoelectronic devices 410-1, 410-2, 410-3, 410-n may be modified by changing the value of resistor R52
  • Each switch circuit of the plurality or plurality of switch circuits 408-1, 408-2, 408-3, 408-n may have a
  • Switches 426-1, 426-2, 426-3, 426-n have, for example, a triac, a transistor, such as a MOSFET (shown), a thyristor or the like
  • Electronic device such as a circuit or an integrated circuit with a similar function.
  • MOSFET switches 426-1, 426-2, 426-3, 426-n may be connected to the
  • Terminals of a group of optoelectronic devices 410-1, 410-2, 410-3, 410-n with the respective switch circuit 408-1, 408-2, 408-3, 408-n of the respective Switch 426-1, 426-2, 426-3, 426-n,
  • the MOSFET switch 426-1 (Ml) may be connected with its gate terminal to the node Kll-1, with its source terminal to the node K12-1 and with its drain terminal to the node K3;
  • the MOSFET switch 426-2 (M2) may be connected with its gate terminal to the node Kll-2, with its source terminal to the node K12-2 and with its drain terminal to the node K12-1;
  • MOSFET switch 426-3 may have its gate connected to node Kll-3, its source connected to node K12-3, and its drain connected to node K12-2;
  • MOSFET switch 426-n may be connected at its gate to node Kll-n, its source to node K10, and its drain connected to node K12-n.
  • a switch 426-1, 426-2, 426-3, 426-n in an electrical current conducting state can supply the current through the switch circuit 408-1, 408-2, 408-3, 408 -n-associated group of optoelectronic devices 410-1, 410-2, 410-3, 410-n.
  • bridged groups of optoelectronic devices 410-1, 410-2, 410-3, 410-n be de-energized and no light
  • the group can optoelectronic Devices 410-1, 410-2, 410-3, 410-n connected in parallel with switch 426-1, 426-2, 426-3, 426-n
  • a switch circuit of the plurality of switch circuits 408-1, 408-2, 408-3, 408-n is in a non-conductive state with respect to an electric current, that is, opened, the current through the with the switch 426-1, 426-2, 426-3, 426-n associated group of optoelectronic devices 410-1, 410-2, 410-3, 410-n flow.
  • the group of optoelectronic components 410-1, 410-2, 410-3, 410-n associated with the open switch 426-1, 426-2, 426-3, 426-n can be energized and provide electromagnetic radiation, for example light emit.
  • a current may flow through the non-conductive switch circuit 408-1, 408 -2, 408-3, 408-n associated group of optoelectronic devices 410-1, 410-2, 410-3, 410-n.
  • the at least one optoelectronic component can be energized so that it can provide electromagnetic radiation, for example light.
  • Component 410-1, 410-2, 410-3, 410-n no longer be energized and provide no electromagnetic radiation.
  • each switch circuit 408-1 , 408-2, 408-3, 408-n one Switch protection circuit 422-1, 422-2, 422-3, 422-n
  • Component can be understood as an interruption of a circuit, similar to an open switch in a conventional circuit.
  • a switch protection circuit 422-1, 422-2, 422-3, 422-n may include a first protection resistor Ria, R2a, R3a, Rna connected between the drain terminal and the source terminal of each of them Switch protection circuit 422-1, 422-2, 422-3, 422-n associated switch 426-1, 426-2, 426-3, 426-n may be arranged.
  • the resistor Ria can be connected to the node K3 and the node Kll-1;
  • the resistor R2a can be connected to the node K12-1 and the
  • the resistor R3a can be connected to the node K12-2 and the
  • the resistor RNa can be connected to the node K12-n and the
  • the first protection resistor Ria, R2a, R3a, RNRNa can put the respective associated MOSFET switch 426-1, 426-2, 426-3, 426-n in a conductive state, if the
  • the switch protection circuit 422-1, 422-2, 422-3, 422-n may include a second protection resistor R1, R2, R3, RN.
  • the second protective resistor Rl, R2, R3, RN can be between the Gate terminal and the source terminal of the respectively to the switch protection circuit 422-1, 422-2, 422-3, 422-n
  • the resistor Rl can be connected to the node Kll-1 and the
  • the resistor R2 can be connected to the node Kll-2 and the
  • the resistor R3 can be connected to the node Kll-3 and the
  • the resistor RN can be connected to the node Kll-n and the
  • the MOSFET switch 426-1, 426-2, 426-3, 426-n can assume a non-conductive state.
  • the conductive state of each of the MOSFET switches 426-1, 426-2, 426-3, 426-n can be controlled by the output of the regulator circuit 406.
  • the regulator circuit 406 may be configured, for example, as an output of the operational amplifier U50 (shown).
  • the output of the regulator circuit 406 may be coupled through the respective regulator protection circuits 424-1, 424-2, 424-3, 424-n to the gate of each MOSFET switch 426-1, 426-2, 426- 3, 426-n.
  • a regulator protection circuit 424-1, 424-2, 424-3, 424-n may be, for example, a high voltage diode D1, D2, D3, DN
  • Diode D1 may be connected to the cathode with node Kll-1 and to the anode with node K9.
  • Diode D2 may be connected to the cathode at node Kll-2 and to the anode at node K9.
  • Diode D3 may be connected to the cathode with node Kll-3 and to the anode with node K9.
  • the diode DN may be connected to the cathode with the node Kll-N and to the anode with the node K9.
  • the respective high voltage diode D1, D2, D3, DN may be in the reverse direction
  • the regulator circuit 406 may precede the higher
  • the higher potential can be considered a free electric
  • the respective high-voltage diodes D1, D2, D3, DN can be set up in such a way that the diodes D1, D2, D3, DN can withstand the occurring voltage, for example withstanding, not breaking through.
  • the groups of optoelectronic components 410-1, 410-2, 410-3, 410-n can have a different design, for example provide electromagnetic radiation of different color temperature.
  • the optoelectronic components of a group of optoelectronic components 410-1, 410-2, 410-3, 410-n can be interconnected as a series circuit, as
  • the sum of the voltage drop across all groups should be approximately greater than the voltage spike of the
  • the switch circuits 408-1, 408-2, 408-3, 408-n can be used to bridge non-active groups of optoelectronic devices 410-1, 410-2, 410-3, 410-n and to bypass the current be configured of the controller circuit 406.
  • these functions may be separated, for example, by operating the switch device completely in an "on-state” or “off-state” and current control of the regulator circuit 406 by means of a separate electronic device
  • the optoelectronic devices may be operated at frequencies approximately equal to the switching speed of the switch circuits 408-1, 408-2, 408-3, 408-n and / or the response time of the operational amplifier circuit 436 of the regulator circuit 406.
  • the Frequency need not be limited to the frequency of the input voltage of the voltage source 302.
  • the principle of the current flow control function is the example of the circuit state of the MOSFET switch 426-2
  • MOSFET switch for example, to the left of MOSFET switch 426-2, i. Switch 426-1, in a non-conductive state (open) and all MOSFET switches on the right of MOSFET switch 426-2, i. Switch 426-3, 426-n, in one
  • Components 410-1, 410-2, 410-3, 410-n are energized to the left of MOSFET switch 426-2, ie 410-1, and all groups Optoelectronic devices 410-1, 410-2, 410-3, 410-n right of the MOSFET switch 426-2, ie 410-3, 410-n, are not energized.
  • Optoelectronic devices may be approximately smaller than the rectified input voltage provided by the
  • Rectifier 404 is provided by means of the first chain line 314 and the second chain line 316.
  • Voltage drop across the energized group of opto-electronic devices 410-1 may be via the MOSFET switch 426-2 and the group associated with the MOSFET switch 426-2
  • abut optoelectronic components 410-2 for example fall off.
  • the voltage drop may not be sufficient around the group of optoelectronic devices 410-2
  • the MOSFET switch 426-1 to the left of the MOSFET switch 426-2 may have a source voltage larger than that
  • MOSFET switches 426-2 flow.
  • the MOSFET switches 426-1, 426-2, 426-3, 426-n may be any MOSFET switches 426-1, 426-2, 426-3, 426-n.
  • the MOSFET switch 426-3 to the right of the MOSFET switch 426-2 can assume a higher resistance, for example, form.
  • the voltage at the source terminal of the MOSFET switch 426-2 may increase and the MOSFET switch 426-2 may become non-conductive (opened).
  • the rectified input voltage Vj_ n is changed, for example, increases, for example, by means of time modulating the input voltage or changing the degree of dimming, the current flow through the group can
  • the regulator circuit 406 may be at a concrete
  • the plurality of switch circuits 408-1, 408-2, 408-3, 408-n can be directly opened and / or closed, for example as a result of
  • Voltage change for example, the voltage drop across the plurality of groups of optoelectronic devices.
  • the switch 426-3 and further switches 426-n can be opened in a similar manner until the sum of the
  • optoelectronic devices 410-3, 410-n reaches the magnitude of the input voltage approximately.
  • the first group of optoelectronic components 410-1 can be energized for a longer time than all energized groups of optoelectronic devices 426-2, 426-3, 426-n right of the first group 410-1.
  • the group of optoelectronic devices with the shortest on-time can be the last energized group
  • Optoelectronic devices for example, 410-n.
  • the current can be adjusted by the groups of optoelectronic components. This can also be called changing dimmer firing time
  • the dimmer ignition time can be used as the phase angle of a
  • the resistor R52 can be embodied as a variable resistor R52, for example a
  • Potentiometer R52 be set up.
  • the delay can correspond to the time associated with the phase angle.
  • the time may depend on the frequency of one
  • the electromagnetic radiation having a higher correlated color temperature
  • second color valence than the optoelectronic components of the groups with a longer on-time (first color valence), for example the groups of optoelectronic components 408-1, 408-2.
  • Electromagnetic radiation of the second color valence for example with a higher, correlated color temperature, can reduce the overall brightness, that is to say the overall intensity of the electromagnetic radiation provided, and the correlated color temperature of the total electromagnetic radiation provided (see also Table 100).
  • Light components of the optoelectronic components of the higher color temperature can be reduced.
  • Vertex voltage that is, the instantaneous voltage or the input voltage to a group of optoelectronic Components
  • the groups of optoelectronic devices right for example, from the group of optoelectronic devices 410-n starting to the left, for example, to the group of optoelectronic devices 410-1, ie the groups 410-n, 410-3, 410-2, for example none
  • Optoelectronic devices 410-1, 410-2, 410-3, 410-n for example, the switch 426-3, 426-n, in a non-conductive state to move (open).
  • Optoelectronic devices provide electromagnetic radiation.
  • Shift color valency for example the correlated color temperature, of the total electromagnetic radiation provided in the direction of the color valence of the first group of optoelectronic components 408-1,
  • Components 410-2, 410-3, 410-n have a shorter duty cycle and / or some groups at high phase angles
  • Optoelectronic components 410-2, 410-3, 410-n can no longer provide electromagnetic radiation.
  • Adjusting the phase angle, the light field can change, for example the brightness, the color temperature provided electromagnetic radiation and the number of electromagnetic radiation providing
  • the brightness may be small, the color temperature may appear lower, for example, and the light field may be smaller.
  • a first group of optoelectronic components 410-1 electromagnetic
  • a first group of optoelectronic components 410-1 may have, for example, approximately 19 optoelectronic components, for example light emitting diodes.
  • a second group of optoelectronic components 410-2 electromagnetic
  • a second group of optoelectronic components 410-2 may have, for example, approximately 18 optoelectronic components, for example light emitting diodes.
  • a third group of optoelectronic components 410-3 may be approximately 25 optoelectronic components, such as LEDs have.
  • a fourth group of optoelectronic components 410-4 may have, for example, approximately 15 optoelectronic components, for example light-emitting diodes.
  • a fifth group of optoelectronic components 410-5 may comprise, for example, approximately 15 optoelectronic components, for example light-emitting diodes.
  • Device device may comprise a rectifier which is electrically connected to a linear regulator.
  • the controller can be used for several groups of optoelectronic
  • Component such as light emitting diodes, provide a voltage VLE D.
  • each group of optoelectronic components may comprise approximately twice and / or approximately half the number of optoelectronic components with respect to FIG
  • FIG. 5 shows, as an example, the light-emitting diode / switch region of a circuit with four LED groups 510, 512, 514, 516.
  • switches 502, 504, 506, 508 may be operated in a binary circuit pattern, shown in view 520.
  • the voltage drop across the linear regulator can be kept low and a good electrical efficiency can be achieved.
  • the dimming of the circuit has a phase control, for example, at large phase angles some of the groups of optoelectronic components with a large number of optoelectronic devices are no longer energized, for example, the group of optoelectronic devices 516.
  • the groups of optoelectronic devices that are no longer turned on, for example are not energized, because the voltage drop VLE D over the LED chain, that is about the energized groups of the optoelectronic devices should be approximately smaller than the applied input voltage.
  • Device devices may include the groups of opto-electronic devices operating at high phase angles, i. high dimming level, no longer be energized, optoelectronic
  • Components D41-D48 for example, a larger
  • Probability to be energized at higher voltage for example, electron-magnetic radiation with a second color valence, for example, a higher
  • Color temperature with respect to other groups optoelectronic device of the optoelectronic component device provide.
  • the higher color temperature can also be higher, for example, with respect to the mean color temperature of the group of optoelectronic components with respect to at least one further group of optoelectronic components.
  • devices such as Dil may have a higher probability of being operated at a lower voltage or no dependence
  • optoelectronic components for example a warm white emitting LED and a cold white emitting LED.
  • the optoelectronic components for example a warm white emitting LED and a cold white emitting LED.
  • the optoelectronic components for example a warm white emitting LED and a cold white emitting LED.
  • Components of the first group Dil and the optoelectronic devices of the second group D21, D22, for example, provide warm white light.
  • the optoelectronic components of the third group D31-D34 can be, for example, optoelectronic components
  • the optoelectronic components of the fourth group D41-D48 can have, for example, optoelectronic components which provide cool white light.
  • 6 shows a concrete embodiment of a
  • the groups of optoelectronic components can have optoelectronic components which, for example, provide blue light and / or a Wavelength converter, for example a phosphor layer.
  • the wavelength converter can be used in the beam path of the
  • provided electromagnetic radiation may be formed on or above the optoelectronic device.
  • package 600 Shown in the schematic cross-sectional view of package 600 (package 600) are a first one
  • Wavelength converter 606 on or above a first one
  • Wavelength converter 608 on or over a second
  • Optoelectronic devices 602, 604 on or over a substrate 610 for example, a chip carrier 610 (chip carrier 610) are applied.
  • color temperature have as the
  • the wavelength converter for example a phosphor layer, on or via the optoelectronic component can be printed, for example, on the optoelectronic component and / or applied as ceramic plates on or over the optoelectronic components, for example, placed.
  • the substrate can be, for example, electrically different, conductive Have area, such as the
  • Optoelectronic components can be set up.
  • the optoelectronic components can be set up. In one embodiment, the optoelectronic
  • device 602, 604 may be part of the same and / or different group of optoelectronic
  • Substrate 610 may be arranged for storing electrical energy 612, for example in the substrate 610
  • capacitors 612 may be formed on or above the substrate 610.
  • the substrate 610 may, for example, be arranged on or over at least one part of a leadframe 702, 706 (leadframe 702, 706), for example in the electrical and / or physical, for example cohesive, contact.
  • a leadframe 702, 706 may, for example, be understood to mean a metal structure that has one or more metal pieces,
  • a leadframe 702, 706 may be formed of, for example, a sheet metal plate, for example, by a chemical method such as etching, or by a mechanical method such as punching.
  • a leadframe 702, 706 may include a metal frame that includes a plurality of later-electrode-forming pieces of metal
  • a leadframe 702, 706 may be understood to be one of the above Metal pieces formed metal frame which form electrodes, wherein the metal pieces are no longer physically connected to each other by means of the metal, ie
  • the leadframe itself or can represent isolated parts of a leadframe.
  • the different electrical and / or electronic components 610, 612 of the component device can be connected to the substrate 610 and / or the leadframe 702, 706 by means of wirings 614.
  • the optoelectronic component device may comprise a potting material 620, for example a housing 620.
  • the potting material 620 may include, for example, a plastic or be formed therefrom.
  • the potting material may comprise or be formed from a group of substances as a substance: polyolefins (for example high or low density polyethylene (PE) or polypropylene (PP)), polyvinyl chloride (PVC), polystyrene (PS), polyester, polycarbonate (PC),
  • polyolefins for example high or low density polyethylene (PE) or polypropylene (PP)
  • PVC polyvinyl chloride
  • PS polystyrene
  • polyester polycarbonate
  • PET Polyethylene terephthalate
  • PES polyethersulfone
  • PEN Polyethylene naphthalate
  • PMMA polymethyl methacrylate
  • PI polyimide
  • PEEK polyether ketone
  • the potting material 620 may be configured for mechanical stabilization of the optoelectronic component device. In one embodiment, at least a part of the
  • Leadframes 702, 706 from the housing 620 and / or the package 620 be led out, for example, for conversion.
  • the exported parts of the leadframe 702, 706 can
  • pin 1 for example, referred to as a pin
  • pin 5 see, for example, Fig.7.
  • the lead-out parts of the leadframe 702, 706 can be set up, for example, to make electrical contact with the groups of the optoelectronic components 602, 604.
  • the optoelectronic component device can have an optical component 622, for example an optical lens 622.
  • the optical lens 622 can be any optical lens 622.
  • Vergusses be formed.
  • the optical lens 622 may comprise or be formed from, for example, a silicone, a silazane and / or an epoxy.
  • the switch circuits 408-1, 408-2, 408-3, 408-n for the optoelectronic components may, for example, be formed on or in the substrate 610 (not shown).
  • different wavelength converters 606, 608 for example different phosphor layers 606, 608 on the different groups of the optoelectronic components 602, 604, the same substance and / or the same substance mixture with the same phosphor for both
  • Groups of optoelectronic device 602, 604 are used.
  • Phosphor layer 606, 608 for different groups Optoelectronic components are set up differently.
  • Groups of the optoelectronic components can be similar or identical and the different color location can be formed by means of different layer thicknesses of the phosphor layer.
  • a series of groups of optoelectronic components 602, 604 may be applied and / or formed on or above the substrate 610, and a phosphor layer 606, 608 may be applied thereto or thereon by screen printing.
  • the phosphor layer 606, 608 can with respect to the flat surface of the substrate 610 and the optoelectronic device 602, 604 a
  • the layer thickness gradient of the phosphor layer 606, 608 can be selected such that the average layer thickness of the phosphor layer 606, 608 is limited to groups
  • the phosphor layer can be dispensed, for example dispensed irregularly, and / or the phosphor layer can be applied by means of volume encapsulation.
  • FIG. 7 shows a printed circuit board, which can be understood as a specific embodiment of an optoelectronic component device, wherein both ends of the LED chains are arranged close to one another.
  • a package 600 with at least a group of optoelectronic components shown two groups 602, 604, for example, similar or equal to one of
  • the pin 2 and the pin 3 may be configured as contacts of a first group of optoelectronic components.
  • the pin 1 and the pin 5 may be configured as contacts of a second group of optoelectronic components.
  • Pins 2, 3 and 1, 5 can be used to serially power the different packages 716-1, 716-2, 716-3, 716-4, 716-5, 716-6, 716-7, 716-8, 716 -9 be set up.
  • the pin 4 may be configured as a common terminal 312 of the regulator circuit.
  • the components of the circuit for operating an optoelectronic component device described above for example the switch circuits 426-1, 426-2, 426-3, 426-n, can be found, for example, in the respective package 716-1, 716-2, 716-3, 716-4, 716-5, 716-6, 716-7, 716-8, 716-9.
  • the rectifier 404 and the voltage source 402 are not shown in the view 500 and can be realized, for example, on a further, not shown board.
  • the series connection of groups of optoelectronic devices 410-1, 410-2, 410-3, 410-n by means of the electrical coupling of the pin 1 of a first package to the pin 5 of a second package and an electrical coupling of the pin 2 a first package with the pin 3 of a second package can be realized.
  • the illustrated arrangement may have the advantage that the printed circuit board can be printed on one side, since the electrical interconnects 712 do not intersect and / or the electrical interconnects 714 can run invisible under the packages of the groups of optoelectronic components.
  • FIG. 8 shows a concrete embodiment of a dimmable, optoelectronic component device, according to
  • the view 800 shows a plan view of a part of an optoelectronic component device, according to one embodiment of the descriptions of FIGS. 1 to 7.
  • Component device can the groups of optoelectronic devices 410-1, 410-2, 410-3, 410-4, 410-5 such
  • the groups of optoelectronic components with a second color valence for example high correlated color temperature, concentric at least partially surrounded or surrounded at least a group of optoelectronic devices with first Farbvalenz, for example, lower correlated color temperature.
  • the fifth group of optoelectronic components 410-5 with the shortest on-switching time can be, for example
  • the fifth group can optoelectronic
  • Components 410-5 go out first, i. no longer be energized. Thereafter, the fourth group of optoelectronic devices 410-4 may follow with lower correlated color temperature.
  • Optoelectronic devices are surrounded with the highest correlated color temperature of groups of optoelectronic devices with lower temperature.
  • Different temperature devices may be arranged concentrically with each other so that the color valence of provided electromagnetic radiation, i. of the
  • Color location for example, the color temperature, from the inside increases externally, increases from outside to inside or
  • the concentric arrangement may, for example, have a shape similar to or equal to one of the geometric shape: a square, a rectangle, a triangle, a circle, an ellipse, a quadrangle, a meandering arrangement, or the like.
  • optoelectronic component device If more than two groups of optoelectronic component are required for the optoelectronic component device, they can be formed, for example, alternately within a segment, ie within a ring, for example represented by the fourth group 410-4 and fifth group 410-5 in the view 800.
  • Optoelectronic device device provided with which it is possible by means of very little circuit complexity with only a chain of groups optoelectronic
  • Design elements with different Farbvalenz provided electromagnetic radiation, such as correlated color temperature, during dimming.
  • the optoelectronic components can be arranged such that the optoelectronic components, the electromagnetic radiation with a high correlated color temperature
  • Diffuser material and a lower diffuser thickness may be necessary.
  • the optical loss can be lower, whereby the efficiency of the light source can be increased.
  • Optoelectronic component device such as LED lighting, with variable correlated
  • the optoelectronic component device may have the advantage that the optoelectronic
  • Components such as LEDs, with lower correlated color temperature and associated lower efficiency are switched on longer and thus the impression of the total luminance appears homogeneous.
  • Color temperature also already provide electromagnetic radiation, while the input voltage to the

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  • Optics & Photonics (AREA)
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Abstract

Dans différents exemples de réalisation, l'invention concerne un dispositif à composants optoélectroniques présentant des composants optoélectroniques qui comprennent : un premier groupe de composants optoélectroniques (106, 410-n) présentant au moins un premier composant optoélectronique, ledit au moins un premier composant optoélectronique étant conçu pour fournir un rayonnement électromagnétique d'une première valence chromatique (212), un deuxième groupe de composants optoélectroniques (102, 410-1) présentant au moins un deuxième composant optoélectronique, ledit au moins un deuxième composant optoélectronique étant conçu pour fournir un rayonnement électromagnétique d'une deuxième valence chromatique (210), ainsi qu'un variateur de phase (406), ledit variateur de phase (406) étant conçu de manière à fournir un premier mode de fonctionnement présentant un premier degré de variation d'éclairage et un second mode de fonctionnement présentant un second degré de variation d'éclairage. Le variateur de phase (406) pilote le premier groupe de composants optoélectroniques (106, 410n) et le second groupe de composants optoélectroniques (102, 410-1), de sorte que dans le premier mode de fonctionnement, une première zone de composants optoélectroniques du dispositif à composants optoélectroniques est parcourue par le courant et que dans le second mode de fonctionnement, une seconde zone de composants optoélectroniques du dispositif à composants optoélectroniques est parcourue par le courant. En ce qui concerne l'intensité totale du rayonnement électromagnétique fourni du dispositif à composants optoélectroniques, la part du rayonnement électromagnétique de la première valence chromatique (212) du premier mode de fonctionnement est inférieure à celle du second mode de fonctionnement et la part du rayonnement électromagnétique de la seconde valence chromatique (210) du premier mode de fonctionnement est supérieure à celle du second mode de fonctionnement.
EP13702371.9A 2012-01-20 2013-01-18 Dispositif à composants optoélectroniques Withdrawn EP2805570A1 (fr)

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US9450505B2 (en) 2016-09-20

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