EP2795687A2 - Élément thermoélectrique - Google Patents

Élément thermoélectrique

Info

Publication number
EP2795687A2
EP2795687A2 EP12821006.9A EP12821006A EP2795687A2 EP 2795687 A2 EP2795687 A2 EP 2795687A2 EP 12821006 A EP12821006 A EP 12821006A EP 2795687 A2 EP2795687 A2 EP 2795687A2
Authority
EP
European Patent Office
Prior art keywords
thermoelectric element
layer
element according
carrier layer
thermoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12821006.9A
Other languages
German (de)
English (en)
Inventor
Eduard BUTZETZKI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Buzetzki Eduard
Kirchheimer Karl
Padinger Franz
Schiller Karl
Original Assignee
Buzetzki Eduard
Kirchheimer Karl
Padinger Franz
Schiller Karl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Buzetzki Eduard, Kirchheimer Karl, Padinger Franz, Schiller Karl filed Critical Buzetzki Eduard
Publication of EP2795687A2 publication Critical patent/EP2795687A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
    • H10N19/101—Multiple thermocouples connected in a cascade arrangement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/60—Thermal-PV hybrids

Definitions

  • the invention relates to a thermoelectric element.
  • thermoelectric elements or thermoelectric generators (TEG) are based on the Seebeck effect, according to which there is a stress formation at a temperature difference along second interconnected conductors of different materials.
  • the Seebeck effect is considered herein to be known to those skilled in the art.
  • thermoelectric generators as a measuring point or measuring probe, for example in Zündschen of firing systems
  • a design is known as a planar element.
  • a semiconductor combination is used, structurally similar to a Peltier element.
  • the efficiency compared to thermocouples, based on metal pairings, can be significantly increased.
  • semiconductor elements in each case an n- and a p-type semiconductor, are connected in series in a known manner, the series connection bridge being arranged alternately opposite one another and thus forming a cold and a warm side of a Peltier element. When forming a temperature difference between see the cold and warm side of the Peltier element, it comes due to the Seeback- effect, at the connection points to a supply of electrical energy.
  • thermoelectric generators A disadvantage of such TEGs is that the Seebeck effect is based on a temperature difference, the deliverable voltage increases with increasing temperature difference up to a maximum value of the temperature difference, so that the largest possible temperature difference must be maintained for a reliable functioning of such an element. Therefore, one side, the cold side, usually cooled with quite expensive devices, for example by means of forced air cooling and possibly by means of water cooling. As a result of this additional expense, an economic energy recovery by means of TEGs is for the most part not given, since the expense for the required cooling makes up for the advantage of the energy gain.
  • Another field of application for thermoelectric generators is wherever process heat is present, which must be dissipated unused to the environment or via cooling systems.
  • thermoelectric elements have, as already described, the disadvantage that they are good for energy only in the presence of a temperature difference between the two flat sides, for energy, in Peltier elements up to 70 ° C temperature difference can be achieved / required. In the case of arrangement of known elements on a photovoltaic element, the energy gain obtained would be used up by the additional expense of cooling the thermoelectric element, so that economical use is essentially not possible.
  • thermoelectric element Due to the construction as a series connection of individual semiconductor blocks, the known, thermoelectric element, although a low electrical resistance, but at the same time also has a very low thermal resistance. As a result, when heat is introduced on one side, the heat flow penetrates the thermoelectric element very quickly and, without a sufficiently strong cooling of the opposite side, temperature compensation takes place, as a result of which the heat flow and thus also the energy conversion comes to a standstill.
  • the invention has for its object to provide a thin-film thermoelectric element (TEE), which has a higher efficiency compared to known TEEn and is simpler and cheaper to manufacture. Furthermore, it is the object of the invention to design the thermoelectric element in such a way that the temperature compensation in the element is reduced.
  • TEE thin-film thermoelectric element
  • thermoelectric element which comprises an electrically conductive carrier layer, an active element and an electrically conductive cover layer.
  • the carrier layer and the cover layer form the discharge electrodes, and furthermore the active element has a p-n junction from an n-type semiconductor to a p-type semiconductor.
  • the active element is arranged between the carrier layer and the cover layer and connected to these electrically conductive.
  • the n-type semiconductor is formed from the group of the cyanoferrate, which has the surprising advantage that with materials from this group, when arranged in a p-n junction, a conversion of heat into electrical energy takes place.
  • thermoelectric elements have a pn junction, wherein as semiconductor materials, for example, Bi 2 Te 3 , PbTe, SiGe, BiSb or FeSi 2 are known.
  • semiconductor materials for example, Bi 2 Te 3 , PbTe, SiGe, BiSb or FeSi 2 are known.
  • these elements are very expensive and, on the other hand, have a very modest conversion efficiency in the desired frequency range of the infrared radiation (IR).
  • IR infrared radiation
  • Si-based semiconductors are due to their band gap only for wavelengths greater than about 1.1 ⁇ largely unsuitable, GaSb-based semiconductors can be used up to about 1.5 ⁇ , but have a lower efficiency than Si semiconductors.
  • the active element is arranged on the carrier layer and on the active element, the cover layer is arranged, a protection of the active element is achieved by the two layers. Furthermore, by the two layers a good thermal Coupling to the environment or to a thermal energy source achieved, or a homogenization of the thermal energy input in the carrier or cover layer is achieved. This also results in a good derivation of the charge carriers generated by the active element.
  • a planar device is formed, which can be attached very well to a thermal energy source and thereby enables good thermal coupling with the energy source.
  • thermal energy can thus be removed from a source over a large area.
  • thermoelectric elements the semiconductive materials are arranged in blocks next to each other and each connected to the front side to form a series connection, wherein the respective end faces of all blocks form the two flat sides of such an element.
  • the structure of a known TEE is considered herein to be known to those skilled in the art.
  • this under inplane known arrangement has the advantage of low electrical resistance, but at the same time, the thermal resistance is low. Therefore, a temperature compensation occurs across the thickness of the semiconductor blocks, whereby the energy conversion disappears - since this is based on a temperature difference between the semiconductor junctions. Therefore, in such elements, a temperature difference across the thickness of the semiconductor blocks must be maintained - one side is usually quite expensive cooled, which significantly reduces the overall efficiency.
  • a claimed arrangement according to which the active element is designed as a layer structure (crossplane) now has the advantage that thereby the thermal resistance increases significantly over the thickness of the layer structure, so that it comes only to a low temperature compensation and the TEE thus manages without additional cooling ,
  • the visual structure is preferably constructed such that the p-type semiconductor is arranged on the carrier layer. Above this, the n-type semiconductor is arranged, on which the cover layer is arranged.
  • the n-type semiconductor is formed by hexacyanoferrate.
  • the n-type semiconductor is formed from iron (III) hexacyanoferrate (II / III) (FevCigNig).
  • Iron hexacyanoferrate is known as a dye under the name Prussian Blue. It is surprising that this dye is able to convert heat into electrical energy as an n-type semiconductor in a pn junction of an active element - similar to the Seebeck effect. Due to the cage-like structure of the hexa-cyanoferrate anion, when thermal energy is applied, the iron in the anion undergoes a disordered movement
  • Hole transporter acts, collected, on the electrically conductive carrier and cover layer, the generated charge carriers are removed from the n- and p-layer.
  • the n-type semiconductor is doped with at least one substance from the group of metal oxides, for example. With Ti0 2 , whereby an improvement in the conversion efficiency is achieved.
  • metal oxides all those substances which have a large band gap and / or a surface structure with large pores are advantageous, in order to achieve the greatest possible absorption of the impinging thermal energy (IR radiation).
  • the p-type semiconductor may be formed of a material of the group PEDOT: PSS, GaSb / PEDOT and Si.
  • PEDOT group PEDOT: PSS, GaSb / PEDOT and Si.
  • silicon nano Si or p-doped Si eg with boron is possible.
  • the carrier layer is formed by a transparent substrate, on which a transparent electrode is applied.
  • the carrier layer may be formed by glass, plastic, the transparent electrode is preferably designed as a TCO. forms.
  • the relevant wavelength range from 400 nm to 700 nm, is not attenuated by the carrier layer or the electrode, or only very slightly.
  • This design has the further advantage that the carrier layer can be formed electrically insulating and thus the attachment of the subject TEEs on a variety of materials, in particular electrically conductive, without additional protective measures is possible.
  • the carrier layer is formed by an elastically recoverable substrate
  • an element is created which can be attached to non-planar surfaces without the risk of damaging the TEEs.
  • the backing layer may be formed by a PET layer, but it is within the skill of the artisan to set the minimum bending radii of the material, the active element, and particularly those of the drain electrodes to prevent damage by deformation.
  • a development according to which the carrier layer and / or the cover layer is formed by a metallic conductor has the advantage that once a very good dissipation of the charge carriers is given. Furthermore, a metallic conductor usually also has a good thermal conductivity, whereby a temperature compensation over the carrier and / or the cover layer is possible and this therefore each is at a uniform temperature level.
  • the n-type semiconductor is applied directly to the carrier layer, which thus assumes the support function and charge carrier discharge.
  • the carrier layer is formed by a collector layer, for example. From tungsten carbide. This advantageously achieves that incoming IR radiation from the collector layer is converted into convective heat, which then acts on the active element.
  • the collector layer may be selectively formed, for example, for a wavelength range, so as to absorb as much energy as possible despite a low incident radiation power and pass it on to the active element.
  • the subject TEE can be used in an environment where only a portion of the infrared spectrum is present and the energy content in this spectral range for a direct action on the active element possibly too low.
  • a significant increase in efficiency can be achieved with a frequency-selective collector.
  • a development further consists in that the carrier layer and / or the cover layer is formed by an electrically conductive grid structure. This ensures that the proportion of the area of the active element is covered, which is covered by the discharge electrodes and thus more area is available for exposure to the IR radiation. Nevertheless, the derivation grid ensures sufficiently good dissipation of the charge carriers.
  • a protective layer is applied over the portions of the active element which are not covered by the carrier layer and the cover layer.
  • This protective layer can be formed, for example, by glass, by a plastic film which may be coated with aluminum or boron nitride to reduce the moisture and oxygen permeability, or by a metallized film. Just moisture and / or oxygen can cause slowly progressive, irreversible changes in the semiconductor materials of the active element, which can lead to failure of the active element.
  • a development may also consist in that a protective layer is applied on the side facing away from the active element of the carrier layer and / or the cover layer. Since the two layers form the discharge electrodes, it is advantageous for application safety if the protective layer is designed to be electrically insulating, for example as a plastic film made of PET, PVA, PVC, PC, to name only the most important materials. Furthermore, the protective layer may also be designed to protect the layers, and in particular the entire TEE, from the environmental influences prevailing at the point of use.
  • the active element of the subject thermal-electrical element has a thickness in the range of ⁇ to 1mm, preferably in the range of ⁇ to 50 ⁇ .
  • a TEE is created, which has a very low overall thickness - and thus low weight - and thus can be very well attached to existing devices.
  • One possible embodiment for increasing the electrical voltage delivered is that at least one further active element, again with a cover layer, is arranged on the cover layer.
  • the top layer of the lower TEEs is the carrier layer of the TEEs arranged thereon, it is thus a construction-related, hardwired series circuits of several TEEe, the electrical energy is tapped on the lower carrier layer and on the upper cover layer.
  • This arrangement corresponds to a stack construction, wherein the terms lower and upper, denote the arrangement of the respective element in this stack construction.
  • Another possible training to increase the energy output is that arranged one above the other, a repeated structure of carrier layer, active element and top layer is present.
  • An insulating layer may be arranged between the cover layer and the carrier layer of the next TEE arranged thereon, or the cover layer and / or the carrier layer may be designed to be electrically insulating in order to prevent an electrical connection of the TEEs arranged on one another.
  • no electrical interconnection is specified, in particular, the lead electrodes of the individual TEEe are led to the outside and thus arbitrarily externally interconnected, so that any desired series and / or parallel connection can be formed. In particular, so that the voltage level and the current output can be adapted to the desired application.
  • a multilayer system can be constructed in an advantageous manner, which has a plurality of active elements applied one above another or arranged one on top of the other. Since it is possible to produce the discharge electrodes in the printing process, it is also possible to print several TEEs one above the other. For example, arrangements with 10 or more layers are conceivable.
  • the object of the invention is also achieved by a power conversion element having a photovoltaic element and a subject thermoelectric element.
  • the photovoltaic element has an entrance side for optical energy and a base opposite thereto.
  • the thermoelectric element is arranged with its carrier layer thermally contacting on the base.
  • a photovoltaic element heats up very strongly as a result of the sun's rays, with this heating possibly occurring reduces the efficiency of the photovoltaic element, since the conversion properties are temperature-dependent.
  • the photovoltaic element is cooled and that further, the energy previously lost as waste heat is additionally converted into electrical energy. This achieves an increase in the overall efficiency of about 2% compared to a pure photovoltaic conversion.
  • the subject TEE provides about 1.2V
  • a silicon photovoltaic element typically supplies 0.5V
  • the discharge electrodes of the photovoltaic element and the drain electrodes of the thermoelectric element are connected via a voltage converter to an electrical contact portion.
  • this is provided with an element which provides electrical energy at a contact section.
  • thermoelectric element is arranged by means of a clamping device or a clamping device to the photovoltaic element.
  • thermoelectric element is arranged by means of an adhesive bond to the photovoltaic element. This can be done, for example, by an adhesive bond or by lamination, wherein a good thermal connection between the photovoltaic element and the TEE must be given.
  • a heat conducting means is arranged between the base surface and the carrier layer.
  • thermoelectric element an embodiment of the subject thermoelectric element
  • Fig.2. a further possible embodiment of the subject thermoelectric element
  • Fig. 1 shows an embodiment of the subject thermoelectric element 1, in which the active element 2 is applied to the carrier layer 3 and wherein on the active element 2, the cover layer 4 is arranged.
  • the active element 2 has an n-type semiconductor 5 and a p-type semiconductor 6, which adjoin one another at a p-n junction 7.
  • the closed circuit via the consumer 12 is thermal when exposed
  • thermoelectric element 1 electrical energy delivered so that it comes to a current flow 13 in the circuit and the electrical load 12 can be operated by converting thermal energy 8.
  • semiconductor blocks are arranged side by side, each two semiconductor blocks are frontally connected via a contact bridge to form a series circuit with each other.
  • the construction of a Peltier element is assumed to be known herein, in particular it is known that a Peltier element has a warm and a cold flat side, wherein the definition of the hot or cold flat side corresponds to the polarity of the electrical voltage at the terminal electrodes. Since a semiconductor has a low electrical resistance and in particular also a low thermal resistance, heating of the warm flat side results in a thermal energy balance over the Peltier element.
  • the temperature of the cold flat side will match that of the warm, whereby the energy conversion comes to a standstill.
  • the active element 2 is now formed in a so-called crossplane arrangement, that is, the pn junction 7 is in the path of the temperature gradient 10.
  • this arrangement increases the electrical resistance of the active element 2, it is particularly advantageous As a result, the thermal resistance increases significantly. This means directly that the thermal compensation currents are significantly limited in the active element 2, so that cooling of the cold flat side 14 is not required for the subject TEE.
  • thermoelectric element 1 is surrounded by a protective layer 15, the protective layer 15 being arranged at least in those sections in which the active element 2 is not protected from the carrier 3 or cover layer 4 protected against the environment.
  • the carrier 3 or cover layer 4 can also be formed by a grid electrode, so that then preferably the protective layer 15 is disposed on the discharge electrodes 3, 4. It is precisely the protection of the active element 2 that is important, since the semiconductors 5, 6 may chemically react on contact with atmospheric oxygen and / or with ambient moisture, as a result of which the desired material properties may possibly be lost.
  • the protective layer may be formed, for example, by glass, a plastic film which may be coated with aluminum or boron nitride to reduce the moisture and oxygen permeability, or by a metallized film.
  • this material forms a good mechanical protection of the thermoelectric element, but on the other hand does not interfere or only very slightly disturbs the entry of the thermal energy 8 into the warm flat side 9.
  • the n-type semiconductor 5 of the subject thermoelectric element is formed from the group of cyanoferrate, preferably ferric hexacyanoferrate (II / III).
  • This material is known as a dye Prussian Blue, which adjusts in a surprising manner when using this material as n-type semiconductor in a pn junction, a Seeback effect comparable effect, namely that a temperature effect on this combination of materials, a delivery of electrical energy via the discharge electrodes 26th results.
  • materials from the cyanoferrate group are very cost-effective and, in particular, can be processed very easily, for example with all those processes which are suitable for applying a paint to a substrate.
  • the p-type semiconductor 6 there are hardly any restrictions, since this only has to serve as an acceptor.
  • the p-type semiconductor will be formed of a material which, like the n-type semiconductor 5, can be easily processed and is adapted to the carrier 4 or cover layer 3 and the n-type semiconductor 5 with regard to the mechanical properties.
  • thermoelectric element 2 shows a further possible embodiment of the subject thermoelectric element 1.
  • an electrically conductive electrode 17 is arranged on a flat side 16 of the carrier layer 3, on which electrode 17 the active element 2 is arranged.
  • the p-type semiconductor 6 is arranged on the electrode 17, and the n-type semiconductor 5 is arranged thereon.
  • the cover layer 4 is arranged on the n-type semiconductor 5 as a discharge electrode.
  • the n-type semiconductor it is equally possible for the n-type semiconductor to be disposed on the carrier layer, then the n-type semiconductor and then the cover layer.
  • This embodiment has the advantage, for example, that the carrier layer 3 can be formed from an electrically insulating material, for example from a plastic film or glass, so that this TEE can be arranged directly on a thermal energy source with the carrier layer 3, without the user worrying about it the electrical insulation of the TEE 1 must make with respect to the thermal energy source.
  • This embodiment has the further advantage that the carrier layer 3 can serve as a support layer for the subsequently applied layer structure 2.
  • the thickness of the active element 2 is preferably less than 1 mm, such a thin element, even with the drain electrodes applied thereon, presents a problem for further processing of thermal energy sources such that such a thin element can be easily damaged .
  • the layer structure arranged thereon can be reliably protected against mechanical loads.
  • Fig. 3 shows a possible use of the subject, thermal-electrical element 1 in combination with a photovoltaic element 18.
  • the photovoltaic element 18 has a light entrance side 19, which is preferably aligned at an optimum angle to the sun. From the sun light 20 arrives as a mixture of different wavelengths on the light entrance side 19.
  • photovoltaic elements 18 it is known that they can convert only a portion of the incident light spectrum 20 into electrical energy.
  • photovoltaic elements made of polycrystalline or monocrystalline silicon achieve the highest degree of efficiency in comparison to other materials or photovoltaic technologies, they are limited to wavelengths smaller than 1400 ⁇ m from the usable spectral range.
  • thermoelectric element 1 preferably on the back 21 of the photovoltaic element 18, the waste heat of the photovoltaic element 18 is used and converted into electrical energy.
  • the present embodiment achieves a significant increase in the overall efficiency, but at a fraction of the cost of increasing the efficiency of a photovoltaic system. Make Elements 18 necessary.
  • the arrangement of the subject, thermal-electrical element 1 on a photovoltaic element 18 has the further advantage that the photovoltaic element 18 is cooled by the energy conversion, which is the operating parameters and thus the conversion efficiency of the individual photovoltaic Converter is beneficial. It is advantageous for a user if a power conversion element 22 provides its power at a single connection point.
  • a Voltage converter 23 is present. This is connected to the drain electrodes 24 of the photovoltaic element 18 and to the drain electrodes 26 of the thermoelectric element 1.
  • a voltage converter 23 is able in a known manner to combine the electrical energy levels of different electrical energy sources and to provide them at a common energy delivery section 25.
  • thermoelectric element 1 the layer thicknesses of the thermoelectric element 1, in particular the thickness ratios of the carrier 3 and cover layer 4 and of the active element 2 are exaggerated in the figure.
  • An optionally arranged above the layer structure protective layer is also not shown for purposes of illustration in the figure.
  • the thermoelectric element 1 is preferably attached with its carrier layer by gluing or laminating on the back 21 of the photovoltaic element 18, wherein in an adhesive bond, the adhesive must have a good heat conduction to a good thermal coupling of the TEEs to ensure the photovoltaic element 18.
  • a heat transfer medium is present, on the one hand to improve the temperature transport and possibly compensate for existing, small bumps of the back 21 and a good concern of the carrier layer 3 on the back 21 to ensure.
  • the subject thermoelectric element 1 is arranged with its carrier layer on the back of the thermal energy source, here the photovoltaic element 18.
  • the TEE is arranged with its cover layer 4 at the back.
  • the carrier layer 3 is formed as an electrically non-conductive substrate, on which an electrode 17 is arranged, so as to form the discharge electrode. If the TEE is mounted with its electrically conductive cover layer 4 on the back of the photovoltaic element 18, provision must be made that it does not come to a short circuit or to a mutual, electrical impairment between TEE 1 and photovoltaic element 18.
  • the use of printing processes provides a very cost-effective option for producing individual designs of TEEs up to a batch size of 1.
  • the ready-made photovoltaic element can be arranged in a printing device, for example an inkjet printer, and then the thermoelectric element can be printed directly.
  • the individual layers are applied with a print head, which is guided over the section to be printed. Possible is a stratified order, with an interim stored drying step.
  • the entire layer structure can be applied with the discharge electrodes in one pass.
  • a photovoltaic element 18, in particular each individual photovoltaic converter element is usually constructed in a layered manner in a known manner, the base substrate usually forming one of the two discharge electrodes.
  • a possible further development can also consist in that the discharge electrode of the photovoltaic converter elements of the photovoltaic element 18 is formed by the electrically conductive carrier 3 or cover layer 4.
  • a discharge electrode is saved and, furthermore, a particularly compact structure with a very good thermal coupling from the photovoltaic converter elements to the thermoelectric element 1 is achieved.
  • thermoelectric element lies in the fact that with a very cost-effective material, which can be processed very easily, a semiconductor element can be formed, which emits electrical energy when exposed to temperature.
  • materials from the cyanoferrate group exhibit this effect similar to the Seebeck effect, in particular that the preferred iron (III) hexacyanoferrate (II / III), which is generally known as a dye, exhibits this effect.
  • the overall efficiency is significantly increased by the additional energy production from the waste heat and, on the other hand, the operating parameters of the photovoltaic element are stabilized.
  • FIG. 4 shows a possible further embodiment of the subject thermal-electrical element as a stack structure 27, in which a plurality of TEEe 1 are arranged one above the other.
  • a plurality of TEEe 1 are arranged one above the other.
  • another TEE 1 is arranged with its carrier layer. Since the carrier 3 and cover layer 4 also form the discharge electrodes in each case, it can be provided that an electrically insulating layer 28 can be arranged between the two layers.
  • This completely self-sufficient TEEe are created, which are indeed arranged on top of each other and thus are in the same thermal energy flow, but are completely free in terms of their electrical wiring.
  • FIG. 4 shows an electrical circuit network 29 which switches two TEEs in series in each case in order to achieve a higher output voltage.
  • the series circuits are connected in parallel to increase the output current. As a result of multiple superimposing the energy yield can be significantly increased. Since a single TEE can deliver an electrical voltage of up to 1.2 V and a current of up to 3A / m 2 , a series or parallel connection is particularly advantageous if the electrical output parameters can be adapted in a simple way , For example, to be able to operate directly a consumer, or possibly adjust the output voltage in a downstream voltage converter.
  • a further development may be that no insulating layer 28 is present, the cover 4 of the bottom and the support layer 3 of the TEEs arranged thereon are thus in electrical contact.
  • one of the two layers could be omitted, so that the cover layer of the lower, forms the carrier layer of the element arranged thereon.
  • the entire stack structure 27 is connected in series, the output voltage is then tapped on the carrier layer 3 of the lowermost element 1 and on the cover layer 4 of the uppermost element 1.
  • FIGS. 2 to 4 each show a further embodiment of the thermoelectric generator, which is possibly independent of itself, wherein the same reference numerals or component designations are used again for identical parts as in the preceding figures. To avoid unnecessary repetition, reference is made to the detailed description in the preceding figures.
  • thermoelectric generator for a better understanding of the design of the thermoelectric generator, this or its components have been shown partly out of scale and / or enlarged and / or reduced in size.
  • thermoelectric element Dissipation electrodes of the thermoelectric element

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un élément thermoélectrique (1), comprenant une couche support (3) électriquement conductrice, un élément actif (2) et une couche de recouvrement (4) électriquement conductrice. La couche support (3) et la couche de recouvrement (4) forment les électrodes de dissipation. L'élément actif (2) présente en outre une transition p-n (7) d'un semi-conducteur de type n (5) à un semi-conducteur de type p (6), il est disposé entre la couche support (3) et la couche de recouvrement (4) et il est relié à celles-ci de manière électriquement conductrice. Le semi-conducteur de type n (5) est formé à partir du groupe des cyanoferrates. L'invention concerne en outre un élément convertisseur d'énergie (22) comprenant un élément photovoltaïque (18) et un élément thermoélectrique (1). L'élément photovoltaïque (18) présente une face d'entrée (19) pour l'énergie optique (20) et une surface de base (21) opposée à cette face et l'élément thermoélectrique (1) est disposé avec sa couche support (3) en contact thermique sur la surface de base (21).
EP12821006.9A 2011-12-19 2012-12-12 Élément thermoélectrique Withdrawn EP2795687A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA1841/2011A AT512315B1 (de) 2011-12-19 2011-12-19 Thermo-elektrisches-element
PCT/AT2012/050193 WO2013090961A2 (fr) 2011-12-19 2012-12-12 Élément thermoélectrique

Publications (1)

Publication Number Publication Date
EP2795687A2 true EP2795687A2 (fr) 2014-10-29

Family

ID=47631123

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12821006.9A Withdrawn EP2795687A2 (fr) 2011-12-19 2012-12-12 Élément thermoélectrique

Country Status (5)

Country Link
US (1) US20140366925A1 (fr)
EP (1) EP2795687A2 (fr)
AT (1) AT512315B1 (fr)
BR (1) BR112014015216A2 (fr)
WO (1) WO2013090961A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9464124B2 (en) 2011-09-12 2016-10-11 Moderna Therapeutics, Inc. Engineered nucleic acids and methods of use thereof
EP3047525A4 (fr) * 2013-09-17 2017-06-21 Roger Webb Unité modulaire de fixation à un panneau solaire
IT201900003611A1 (it) * 2019-03-12 2020-09-12 Novaprecisio S R L Apparato scambiatore per la generazione di corrente elettrica e calore.
JP7374624B2 (ja) * 2019-06-26 2023-11-07 三桜工業株式会社 熱発電装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9307689D0 (en) * 1993-04-14 1993-06-02 King Peter Differential voltage cell
WO2010073391A1 (fr) * 2008-12-26 2010-07-01 富士通株式会社 Élément de conversion thermoélectrique, procédé de fabrication d'élément de conversion thermoélectrique et dispositif électronique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2013090961A2 *

Also Published As

Publication number Publication date
WO2013090961A2 (fr) 2013-06-27
WO2013090961A3 (fr) 2013-12-27
BR112014015216A2 (pt) 2017-07-04
US20140366925A1 (en) 2014-12-18
AT512315B1 (de) 2014-05-15
AT512315A1 (de) 2013-07-15

Similar Documents

Publication Publication Date Title
EP2700105B1 (fr) Dispositif solaire
AT505168B1 (de) Thermoelektrisches element
WO2001084641A1 (fr) Element thermoelectrique
DE202011104896U1 (de) Struktur für ein Hocheffizienz-CIS/CIGS-basiertes Tandemphotovoltaikmodul
EP2656405B1 (fr) Ensemble thermoélectrique
EP2389687B1 (fr) Élément semiconducteur thermoélectrique
DE102012109992A1 (de) Thermoelektrische Energieerzeugung für Flugzeuge
DE112014006636B4 (de) Thermoelektrischer Wandler und Verfahren zum Herstellen eines thermoelektrischen Wandlers
WO2013090961A2 (fr) Élément thermoélectrique
EP2356704B1 (fr) Procédé de transformation d'énergie thermique en énergie électrique
EP2603940B1 (fr) Générateur thermoélectrique
DE102017223897B4 (de) Solarzelle mit einer Mehrzahl von Unterzellen, die durch eine Verschaltung auf Zellenebene gekoppelt sind
EP2301088B1 (fr) Module doté de plusieurs éléments thermoélectriques
EP2728627A1 (fr) Dispositif de liaison et agencement doté de celui-ci et d'un module photovoltaïque
EP2917944B1 (fr) Élément thermoélectrique et procédé de fabrication correspondant
DE112009000177T5 (de) Infrarotsensor
DE102010015848A1 (de) Solarmodul oder Solarzelle mit optisch funktionaler witterungsbeständiger Oberflächenschicht
DE102013105462A1 (de) Schichtenfolge zur photoelektrischen Umwandlung von Licht sowie Hot Carrier Solarzelle
WO2009023881A1 (fr) Dispositif de conversion de rayonnement infrarouge en courant électrique
EP2181465A2 (fr) Generateur thermoelectrique
DE102012223698A1 (de) Konzentratorsystem
DE202007010981U1 (de) Thermischer Konverter
DE10147796B4 (de) Fotovoltaische Vorrichtung mit elektrischem Verbindungsband als Träger einer fotovoltaischen Zelle in Klebeverbund mit Kühlkörper und Verfahren zur Herstellung
DE102012209322B4 (de) Sonnenkollektor und Verfahren zur Herstellung desselben
EP1202356A2 (fr) Source de tension sous forme de cellule - bouton

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20140714

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H02S 40/44 20140101ALN20150928BHEP

Ipc: H01L 35/32 20060101ALI20150928BHEP

Ipc: H01L 35/14 20060101AFI20150928BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 35/14 20060101AFI20151126BHEP

Ipc: H01L 35/32 20060101ALI20151126BHEP

Ipc: H02S 40/44 20140101ALN20151126BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 35/14 20060101AFI20160129BHEP

Ipc: H02S 40/44 20140101ALN20160129BHEP

Ipc: H01L 35/32 20060101ALI20160129BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20160701