EP2751848A1 - Module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière - Google Patents

Module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière

Info

Publication number
EP2751848A1
EP2751848A1 EP12733473.8A EP12733473A EP2751848A1 EP 2751848 A1 EP2751848 A1 EP 2751848A1 EP 12733473 A EP12733473 A EP 12733473A EP 2751848 A1 EP2751848 A1 EP 2751848A1
Authority
EP
European Patent Office
Prior art keywords
substrate
thin
layer
photovoltaic module
film photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12733473.8A
Other languages
German (de)
English (en)
Inventor
Stephane Auvray
Dana Pakosch
Dang Cuong Phan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to EP12733473.8A priority Critical patent/EP2751848A1/fr
Publication of EP2751848A1 publication Critical patent/EP2751848A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a thin-film photovoltaic module with hydrophobic back coating, a process for its preparation and its use.
  • Thin-film photovoltaic modules for example, exposed to strong weathering on open fields or roof systems at high electrical voltages.
  • Thin film photovoltaic modules typically include monolithically integrated thin film photovoltaic cells that corrode in the presence of moisture in the photovoltaic modules.
  • a high electrical system voltage of up to 1000 V is established.
  • the environment at ground potential may, for example, be represented by grounded fasteners of the thin film photovoltaic module or by a conductive water film with a ground fault on the thin film photovoltaic module.
  • the high system voltage leads to high electric field strengths between the module frame and the photovoltaic layer structure. As a result, electrical transients can occur or ions from the glass can drift into the thin layers of the photovoltaic cells. Corrosion or delamination of the photovoltaic cells leads to permanent performance degradation or failure of the photovoltaic modules.
  • Photovoltaic systems require for the supply of electrical energy into the public grid a circuit of photovoltaic modules and inverters for the conversion of DC voltage into AC voltage.
  • DE 10 2008 007 640 A1 discloses a photovoltaic module with a hydrophobic coating of the light incident side (cover disk). This prevents wetting of the light incidence side with moisture. Impact of precipitation rolls off the cover disc and a deposit of dirt particles carried in the precipitate is reduced. This is intended to reduce the degradation of the efficiency of the photovoltaic module due to the contamination of the cover plate.
  • Glass panes with hydrophobic coatings which are provided as cover plates of photovoltaic modules facing the incident light, are also known from DE 100 63 739 A1, US 2002/0014090 A1 and US 2010/01 19774 A1.
  • the object of the present invention is to provide an improved thin-film photovoltaic module which is protected against moisture and high electric field strengths independently of the inverter and additional electrical components.
  • the thin film photovoltaic module according to the invention having a hydrophobic backside coating comprises the following features:
  • a photovoltaic layer structure on the front of the substrate and - A cover plate, which is connected via its rear side with at least one intermediate layer in terms of area with the front side of the substrate.
  • the front side refers to the side facing the light. With back side the side facing away from light is called.
  • the thin-film photovoltaic module according to the invention comprises a photovoltaic module in the substrate configuration.
  • the photovoltaic layer structure is deposited directly on the substrate.
  • the substrate is located on the side facing away from the light incident side of the photovoltaic module.
  • the cover plate faces the light. The light enters the photovoltaic module via the cover plate.
  • the strength of the electric field between the grounded module frame and the photovoltaic layer structure is decisively dependent on the electrical surface conductivity of the substrate on which the photovoltaic layer structure is arranged.
  • an increase in the surface conductivity of the glass substrate from 8.3 ⁇ 10 -14 S / m (fresh glass) to 3.3 ⁇ 10 ⁇ 8 S / m (aged glass) leads to an increase of the electric field strength by 16% from 630000 V / m to 730000 V / m.
  • the surface electrical conductivity of the substrate is particularly high when a continuous film of water forms on the surface of the substrate as a result of precipitation or condensing humidity.
  • the hydrophobic coating according to the invention increases the contact angle for water to the surface of the substrate. This reduces the wetting of the surface of the substrate with water and, in particular, advantageously prevents the formation of a closed water film on the surface of the substrate facing away from the applied photovoltaic layer structure. This reduces the strength of the electric field between the module frame and the photovoltaic layer structure. This results in a reduced risk of electrical discharges from the photovoltaic system to the earth mass. In addition, the drifting of ions from the substrate into the thin layers of the photovoltaic cells is reduced.
  • the particular advantage lies in a reduced corrosion of the photovoltaic layer structure and thus in a reduced Performance degradation of the thin-film photovoltaic module in long-term use.
  • the hydrophobic coating according to the invention also advantageously reduces the risk of moisture penetration into the photovoltaic module.
  • the hydrophobic coating preferably contains at least one organosilane.
  • the silicon atom is substituted by at least one organic group.
  • the organic group is an alkyl group.
  • the alkyl group may be linear, branched or cyclic.
  • the alkyl group preferably has from 2 to 21 carbon atoms, more preferably from 8 to 16 carbon atoms. This is particularly advantageous in view of the hydrophobic properties of the coating and the reactivity of the alkyl silane in applying the coating.
  • the alkyl group is particularly preferably halogenated, most preferably fluorinated.
  • the alkyl chain contains at least one perfluorinated alkyl group on the chain end remote from the silicon atom or, in the case of a branched alkyl chain, on the chain ends facing away from the silicon atom.
  • Perfluorinated means that the alkyl group is completely substituted with fluorine atoms. This is particularly advantageous with regard to the hydrophobic properties and the chemical resistance of the coating.
  • the organic group may contain a polyether group, preferably a halogenated, more preferably fluorinated polyether group.
  • the organic group may also be unsaturated and contain one or more double and / or triple bonds.
  • the organic group may also contain aromatic groups.
  • the hydrophobic coating may also contain waxes, synthetic resins or silicones, preferably halogenated, particularly preferably fluorinated silicones.
  • the hydrophobic coating may also contain mixtures of various organosilanes, silicones, waxes and / or synthetic resins.
  • the hydrophobic coating may be covalently or electrostatically bonded to the surface of the substrate.
  • the layer thickness of the hydrophobic coating is preferably from 0.5 nm to 50 nm, particularly preferably from 1 nm to 5 nm, very particularly preferably from 1.2 nm to 4 nm and in particular from 1.5 nm to 3 nm. This is particularly advantageous in terms of the hydrophobic properties and the mechanical stability of the coating.
  • One or more further coatings may be arranged between the substrate and the hydrophobic coating.
  • a diffusion barrier layer is arranged against alkali ions between the substrate and the hydrophobic coating. This prevents the diffusion of alkali ions, for example, sodium or potassium ions, from the substrate to the surface of the substrate.
  • alkali ions for example, sodium or potassium ions
  • the accumulation of alkali ions on the surface of the substrate can lead to an increase in the surface conductivity of the substrate and thus to an increase in the electric field between the module frame and the photovoltaic layer structure.
  • the diffusion barrier layer thus advantageously achieves a further reduction of the electric field.
  • the diffusion barrier layer contains, for example, at least silicon nitride, silicon oxynitride, silicon oxide, aluminum nitride or aluminum oxynitride.
  • the diffusion barrier layer contains at least silicon nitride. This is particularly advantageous in terms of the thermal and chemical stability of the coating and the ability of the coating to prevent the diffusion of alkali ions.
  • the high resistivity of the silicon nitride further reduces the surface conductivity of the substrate.
  • the diffusion barrier layer may also contain admixtures of at least one metal, for example aluminum or boron.
  • the layer thickness of the diffusion barrier layer is preferably from 3 nm to 300 nm, particularly preferably from 10 nm to 200 nm and very particularly preferably from 20 nm to 100 nm. This achieves particularly good results.
  • Cover plate and substrate are preferably made of prestressed, partially prestressed or non-prestressed glass, in particular float glass.
  • the cover plate contains in particular hardened or non-hardened low iron soda lime glass with a high Permeability to sunlight.
  • the invention is particularly advantageous if the substrate contains 0.1% by weight to 20% by weight, preferably 10% by weight to 16% by weight, of alkali elements, particularly preferably Na 2 O.
  • alkali elements particularly preferably Na 2 O.
  • cover plate and substrate preferably have thicknesses of 1, 5 mm to 10 mm.
  • the disk surface can be 100 cm 2 to 18 m 2 , preferably 0.5 m 2 to 3 m 2 .
  • the thin-film photovoltaic modules can be flat or curved.
  • the photovoltaic layer structure comprises at least one photovoltaically active absorber layer between a front electrode layer and a back electrode layer.
  • the back electrode layer is arranged between the substrate and the absorber layer.
  • the photovoltaically active absorber layer comprises at least one p-type semiconductor layer.
  • the p-type semiconductor layer contains amorphous, micromorphous or polycrystalline silicon, cadmium telluride (CdTe), gallium arsenide (GaAs), an organic semiconductor or a p-type chalcopyrite semiconductor such as a compound of the group copper-indium Sulfur / selenium (CIS), for example copper indium diselenide (CulnSe 2 ), or a compound of the group copper indium gallium sulfur / selenium (CIGS), for example Cu (InGa) (SSe) 2 .
  • the absorber layer can be doped with metals, preferably sodium.
  • the photovoltaically active absorber layer preferably has a layer thickness of 500 nm to 5 ⁇ , more preferably from 1 ⁇ to 3 ⁇ .
  • the back electrode layer contains at least one metal, preferably molybdenum, titanium, tungsten, nickel, titanium, chromium and / or tantalum.
  • the back electrode layer preferably has a layer thickness of 300 nm to 600 nm.
  • the back electrode layer may comprise a layer stack of different individual layers.
  • the layer stack contains a diffusion barrier layer of, for example, silicon nitride in order to prevent diffusion of, for example, sodium from the substrate into the photovoltaically active absorber layer.
  • the front electrode layer is transparent in the spectral region in which the semiconductor layer is sensitive.
  • the Front electrode layer an n-type semiconductor, preferably aluminum-doped zinc oxide or indium-tin oxide.
  • the front electrode layer preferably has a layer thickness of 500 nm to 2 ⁇ m.
  • the electrode layers may also contain silver, gold, copper, nickel, chromium, tungsten, tin oxide, silicon dioxide, silicon nitride and / or combinations and mixtures thereof.
  • a buffer layer may be arranged between the front electrode layer and the absorber layer.
  • the buffer layer may cause electronic matching between the absorber material and the front electrode layer.
  • the buffer layer contains, for example, a cadmium-sulfur compound and / or intrinsic zinc oxide.
  • the buffer layer preferably has a layer thickness of 1 nm to 50 nm, particularly preferably 5 nm to 30 nm.
  • the photovoltaic layer structure is preferably a monolithically integrated electrical series circuit.
  • the photovoltaic layer structure is subdivided into individual photovoltaically active regions, so-called solar cells, which are connected in series with one another via a region of the back electrode layer.
  • the photovoltaic layer structure is preferably stripped at the edge of the substrate circumferentially with a width of preferably 5 mm to 20 mm, particularly preferably from 10 mm to 15 mm, in order to be protected against ingress of moisture or shading by fastening elements on the edge.
  • a peripheral edge region of the back electrode layer is preferably not coated with the photovoltaically active absorber layer.
  • the width of the edge region of the back electrode layer which is not coated with the absorber layer is preferably from 5 mm to 30 mm, for example approximately 15 mm. This area is preferably used for electrically contacting the back electrode layer with, for example, a foil conductor.
  • the cover plate is connected via its rear side with at least one intermediate layer in terms of area with the front side of the substrate. Since the photovoltaic layer structure is arranged over a large area on the front side of the substrate, the connection between substrate and intermediate layer takes place over a large area via the photovoltaic layer Layer structure.
  • the intermediate layer preferably contains thermoplastic materials, such as polyvinyl butyral (PVB) and / or ethylene vinyl acetate (EVA) or several layers thereof, preferably with thicknesses of 0.3 mm to 0.9 mm.
  • the intermediate layer may also include polyurethane (PU), polypropylene (PP), polyacrylate, polyethylene (PE), polycarbonate (PC), polymethylmethacrylate, polyvinyl chloride, polyacetate resin, casting resins, acrylates, fluorinated ethylene-propylenes, polyvinyl fluoride, ethylene-tetrafluoroethylene, copolymers and / or mixtures thereof.
  • PU polyurethane
  • PP polypropylene
  • PE polyacrylate
  • PE polyethylene
  • PC polycarbonate
  • polymethylmethacrylate polyvinyl chloride
  • polyacetate resin casting resins
  • acrylates fluorinated ethylene-propylenes
  • polyvinyl fluoride polyvinyl fluoride
  • ethylene-tetrafluoroethylene copolymers and / or mixtures thereof.
  • electrically conductive fastening means are attached to the thin-film photovoltaic module, preferably at the outer edges of the cover plate and the substrate.
  • electrically conductive fastening means at the outer edges of the cover plate and substrate at least partially surround the thin-film photovoltaic module.
  • electrically conductive fastening means are designed as a peripheral frame along the outer edge of the thin-film photovoltaic module.
  • the electrically conductive attachment means may also be preferably designed as an interrupted frame, peripheral frame or as fittings.
  • the electrical potential of the attachment means usually corresponds to the ground potential of a reference system, preferably the potential of the earth mass.
  • the object of the invention is further achieved by a method for producing a thin-film photovoltaic module with hydrophobic backcoat, wherein at least
  • a photovoltaic layer structure is applied to the front side of a substrate, b) the front side of the substrate is bonded to the back of a cover plate via an intermediate layer under the action of heat, vacuum and / or pressure and c) a hydrophobic coating on the back side of the substrate is applied.
  • the hydrophobic coating is according to the invention after the connection of cover plate, substrate and photovoltaic layer structure to the photovoltaic module applied. As a result, damage to the hydrophobic coating due in particular to thermal and / or mechanical stresses during the production of the photovoltaic module can advantageously be avoided.
  • the hydrophobic coating is preferably applied as a solution to the back side of the substrate.
  • the solution preferably contains at least one organosilane.
  • the concentration of the organosilane in the solution is preferably from 0.05% by weight to 5% by weight, more preferably from 1% by weight to 3% by weight. This is particularly advantageous with regard to the formation of a homogeneous coating.
  • the organosilane preferably has the general chemical formula
  • X is a hydroxy group or a hydrolyzable functional group, preferably an alkoxy group, more preferably a methoxy or ethoxy group, or a halogen atom, more preferably a chlorine atom.
  • any hydrolyzable functional group can react with water with elimination of H-X to form a hydroxyl group.
  • the organosilane can react with reactive groups on the surface of the substrate, preferably hydroxy groups, with elimination of water and thus form a covalent bond to the substrate.
  • the organosilane may react with the hydroxy groups on the surface of the substrate with elimination of H-X.
  • the organosilane is at least one alkylsilane.
  • R can be a linear alkyl group.
  • the alkyl silane has the general chemical formula: CH 3 - (CH 2 ) q -SL- X ⁇ -p
  • q is an integer preferably from 1 to 20, more preferably from 7 to 15. This is particularly advantageous in view of the hydrophobic properties of the coating and the reactivity of the alkylsilane.
  • R may contain a branched alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group or an aryl group.
  • the organosilane is at least one halogenated, preferably fluorinated alkylsilane.
  • R contains at least one perfluorinated alkyl group on the chain end facing away from the silicon atom.
  • the fluorine atoms a particularly advantageous hydrophobic property and a chemical resistance of the coating are achieved.
  • the coating is additionally oleophobic.
  • the fluorinated alkylsilane preferably has the general chemical formula:
  • n is an integer preferably from 1 to 5.
  • m is an integer preferably from 0 to 15. More preferably m is at least twice as large as n. This is particularly advantageous in view of the hydrophobic properties and chemical resistance of the coating and the reactivity of the fluorinated alkylsilane.
  • R contains a polyether group, preferably a halogenated, particularly preferably fluorinated polyether group.
  • the polyethersilane preferably has the general chemical formula:
  • the fluorinated polyethersilane preferably has the general chemical formula F 3 C - (CF 2 -CF 2 -CF 2 -O) s - (CH 2 -CH) r - H
  • s is an integer preferably from 2 to 30. This results in particularly good results.
  • the hydrophobic coating solution may alternatively contain waxes, synthetic resins or silicones, preferably halogenated, more preferably fluorinated silicones.
  • the hydrophobic coating solution may also contain mixtures of various organosilanes, silicones, waxes and / or synthetic resins.
  • R ' is preferably an alkyl group or hydrogen.
  • the solvent preferably contains at least one alcohol, for example ethanol or isopropanol.
  • the solvent particularly preferably contains a mixture of at least one alcohol and water.
  • the water serves to hydrolyze the hydrolyzable groups of the organosilane. This is particularly advantageous in terms of the stability and rate of binding of the hydrophobic coating to the surface of the substrate.
  • the proportion of water in the solvent is preferably from 3% by volume to 20% by volume. This is particularly advantageous in terms of effective activation of the Organosilane by hydrolysis and avoid homopolymerization of the organosilane.
  • the solution further contains a catalyst.
  • the catalyst accelerates the hydrolysis of the hydrolyzable groups of the organosilane.
  • the catalyst preferably contains a Bronsted acid, for example hydrochloric acid or acetic acid, or a Bronsted base, for example sodium hydroxide.
  • the solution preferably contains 0.005 wt .-% to 20 wt .-%, particularly preferably from 5 wt .-% to 15 wt .-% catalyst. This achieves particularly good results.
  • the solution can be applied, for example, by spraying or brushing.
  • the substrate may be immersed in the solution.
  • the temperature of the substrate during application of the solution is preferably from 20 ' ⁇ to 300' ⁇ . This is particularly advantageous in terms of the speed of the combination of hydrophobic coating and substrate and the avoidance of thermal damage to the components of the hydrophobic coating.
  • the substrate can also be heated to a temperature of 20 ' ⁇ to 300' ⁇ after application of the solution.
  • a bonding agent is applied to the back of the substrate prior to applying the hydrophobic coating.
  • the adhesion promoter preferably contains at least one silane, where the silicon atom is substituted by at least two hydroxyl groups and / or hydrolyzable groups, for example alkoxy groups or halogen atoms. Particularly preferably, the silicon atom is substituted by four hydroxy groups and / or hydrolyzable groups.
  • the silane can be bound via the hydroxy groups or the hydrolyzable groups on the one hand to the surface of the substrate and on the other hand to the hydrophobic coating, in particular by a covalent chemical bond.
  • the particular advantage lies in a permanently stable connection of the hydrophobic coating to the substrate.
  • the adhesion promoter is preferably applied in a solvent, for example by spraying, brushing or immersing the substrate in the solution.
  • the solution preferably contains from 0.001% by weight to 5% by weight of the adhesion promoter. This achieves particularly good results.
  • a diffusion barrier layer against alkali ions is applied to the back of the substrate before the hydrophobic coating is applied.
  • the diffusion barrier layer can be applied to the front side of the substrate before or after the application of the photovoltaic layer structure.
  • the diffusion barrier layer can be applied before or after bonding the cover plate and the substrate.
  • the diffusion barrier layer contains, for example, silicon oxynitride, silicon oxide, aluminum nitride, aluminum oxynitride, preferably silicon nitride.
  • the diffusion barrier layer is applied to the substrate, for example, by sputtering.
  • the individual layers of the photovoltaic layer structure are preferably applied to the substrate by sputtering, vapor deposition or chemical vapor deposition (CVD).
  • the photovoltaic layer structure is subdivided into individual photovoltaically active regions, so-called solar cells.
  • the subdivision is made by incisions into individual layers or individual groups of layers of the layer structure after their application using a suitable structuring technology such as laser writing and mechanical processing, for example by lifting or scribing.
  • the edge region of the substrate is stripped.
  • the EntSchichtung the edge region for example by means of laser ablation, plasma etching or mechanical methods. Alternatively, masking techniques may be used.
  • the back and / or the front electrode layer for electrical contacting after the application of the layer structure to the substrate and before the connection of the cover plate and the substrate with, for example, a foil conductor are electrically connected.
  • the electrically conductive connection is effected for example by welding, bonding, soldering, clamping or gluing with an electrically conductive adhesive.
  • the connection of foil conductor with the back and / or the front electrode layer can also take place via a bus bar.
  • the methods familiar to the person skilled in the art can be used with and without prior preparation of a precompound.
  • so-called autoclave processes can be carried out at an elevated pressure of about 10 bar to 15 bar and temperatures of 130 ° to 145 ° C. for about 2 hours.
  • vacuum bag or vacuum ring methods known per se operate at about 200 mbar and 130 ° C. to 145 ° C.
  • cover disk and substrate can be pressed with an intermediate layer in a calender between at least one pair of rollers to form a photovoltaic module according to the invention.
  • Systems of this type are known for the production of laminated glazing and usually have at least one heating tunnel in front of a press shop. The temperature during the pressing process is for example from 40 ° C to 150 ' ⁇ . Combinations of calender and autoclave processes have proven particularly useful in practice.
  • vacuum laminators are used to produce the photovoltaic modules according to the invention. These consist of one or more heatable and evacuable chambers, in which cover plate and substrate can be laminated within for example about 60 minutes at reduced pressures of 0.01 mbar to 800 mbar and temperatures of 80 ° C to 170 ° C.
  • the thin-film photovoltaic module is preferably used in a series connection of photovoltaic modules with a negative ground potential of at least -100 V and particularly preferably at least -600 V.
  • the invention also encompasses the use of the hydrophobic coating on the surface remote from the light entrance of thin-film photovoltaic modules to prevent the formation of a closed water film and thus to reduce the surface conductivity.
  • the invention will be explained in more detail with reference to a drawing and exemplary embodiments.
  • the drawing is a schematic representation and not to scale. The drawing does not limit the invention in any way. Show it:
  • Fig. 1 shows a cross section through an inventive thin-film photovoltaic module with hydrophobic back coating.
  • Fig. 3 is a detailed flow chart of the method according to the invention.
  • the thin-film photovoltaic module comprises an electrically insulating substrate 1 made of soda lime glass with a sodium oxide content of 12% by weight. On the front side (III) of the substrate 1, a photovoltaic layer structure 2 is applied.
  • the photovoltaic layer structure 2 comprises a rear electrode layer 10 which is arranged on the front side (III) of the substrate 1 and contains molybdenum and has a layer thickness of approximately 300 nm.
  • the photovoltaic layer structure 2 further contains a photovoltaically active absorber layer 1 1, which contains sodium-doped Cu (InGa) (SSe) 2 and has a layer thickness of about 2 ⁇ .
  • the photovoltaic layer structure 2 further includes a front electrode layer 12 containing aluminum-doped zinc oxide (AZO) and having a layer thickness of about 1 ⁇ .
  • a buffer layer 13 is deposited, which contains a single layer of cadmium sulfide (CdS) and a single layer intrinsic zinc oxide (i-ZnO).
  • the photovoltaic layer structure 2 is subdivided by known methods for producing a thin-film photovoltaic module into individual photovoltaically active regions, so-called solar cells, which are connected in series with each other over a region of the back electrode layer 10.
  • the photovoltaic layer structure 2 is mechanically abraded in the edge region of the substrate 1 with a width of 15 mm.
  • the substrate 1 and the photovoltaic layer structure 2 are connected via the intermediate layer 4 to the rear side (II) of the cover disk 3.
  • the cover plate 3 is transparent to sunlight and contains tempered, extra-white low-iron glass.
  • the front side (I) of the cover plate 3 is turned towards the incidence of light.
  • the cover plate 3 has an area of 1, 6 mx 0.7 m.
  • the intermediate layer 4 contains polyvinyl butyral (PVB) and has a layer thickness of 0.76 mm.
  • the outer edge of the thin-film photovoltaic module is framed by an aluminum frame as an electrically conductive attachment 6. The clamping of the mounting frame 6 takes place with a depth of 5 mm on the surfaces of the substrate 1 and cover disk. 3
  • a hydrophobic coating 5 is applied.
  • the hydrophobic coating 5 covers the entire area of the back side (IV) of the substrate 1, which is not covered by the electrically conductive attachment 8.
  • the hydrophobic coating 5 contains a fluorinated alkylsilane which has been applied to the substrate 1 as F 3 C (CF 2 ) 7 (CH 2 ) 2 SiCl 3 .
  • the hydrophobic coating 5 has a layer thickness of 1.5 nm.
  • the hydrophobic coating 5 is connected to the surface (IV) of the substrate 1 via a bonding agent 9.
  • the adhesion promoter 9 was applied to the substrate 1 as alkoxysilane having the chemical formula Si (OCH 3 ) 4 .
  • the hydrophobic coating 5 increases the contact angle for water to the surface (IV) of the substrate 1. As a result, the wetting of the surface (IV) of the substrate 1 with water as a result of precipitation or due to condensed air humidity is reduced, and in particular the formation of a closed water film on the surface (IV) of the substrate 1 is prevented. Thereby, a reduction of the surface conductivity of the substrate 1 is achieved.
  • the lower surface conductivity of the substrate 1 leads to a lower electric field strength between the electrically conductive attachment 6 and the photovoltaic layer structure 2. The migration of alkali ions from the substrate 1 into the photovoltaic layer structure 2 caused by the electric field can thus be reduced. As a result, the corrosion of the photovoltaic layer structure 2 is advantageously reduced.
  • the hydrophobic coating 2 reduces the risk of moisture entering the thin-film photovoltaic module.
  • Fig. 2 shows a section through an alternative embodiment of the thin-film photovoltaic module according to the invention with hydrophobic backside coating 5.
  • a diffusion barrier layer 7 is arranged against alkali ions.
  • the diffusion barrier layer 7 contains silicon nitride and has a layer thickness of 50 nm.
  • the diffusion barrier layer 7 prevents the diffusion of alkali ions from the substrate 1 to the surface (IV) of the substrate 1. Thereby, the attachment of alkali ions on the surface (IV) of the substrate 1 is prevented and the surface conductivity of the substrate 1 is further reduced.
  • FIG. 3 shows, by way of example, the method according to the invention for producing a thin-film photovoltaic module with a hydrophobic backcoat 5.
  • Test samples of a thin-film photovoltaic module were prepared with the substrate 1, the photovoltaic layer structure 2, the cover plate 3, the intermediate layer 4, the electrically conductive attachment 6 and the hydrophobic coating 5.
  • the substrate 1 and the cover plate 3 were made of soda-lime Glass and had a length and width of 30 cm and a thickness of 2.9 mm.
  • the photovoltaic layer structure 2 comprised successively a back electrode layer 10, a photovoltaically active absorber layer 11, a buffer layer 13 and a front electrode layer 12.
  • the back electrode layer 10 contained molybdenum and had a layer thickness of 300 nm.
  • the photovoltaically active absorber layer 1 1 contained sodium-doped Cu (InGa) (SSe) 2 and had a layer thickness of 2 ⁇ .
  • the buffer layer 13 contained cadmium sulfide (CdS) and had a thickness of about 20 nm.
  • the front electrode layer 12 contained aluminum-doped zinc oxide (AZO) and had a layer thickness of 1 ⁇ .
  • the photovoltaic layer structure 2 was stripped in the edge region of the substrate 1 with a width of 15 mm and had a length and width of 27 cm. The photovoltaic layer structure 2 was not subdivided into individual photovoltaically active areas and thus formed a single solar cell.
  • the photovoltaic layer structure 2 was connected via the back electrode layer 10 to the front side (III) of the substrate 1.
  • the back side (II) of the cover disk 3 was connected via the intermediate layer 4 to the front side (III) of the substrate 1.
  • the intermediate layer 4 contained polyvinyl butyral (PVB) and had a layer thickness of 0.76 mm.
  • the outer edge of the thin-film photovoltaic module was framed by an electrically conductive attachment 6 made of aluminum.
  • a hydrophobic coating 5 was applied on the back side (IV) of the substrate 1.
  • the composition and the layer thickness of the hydrophobic coating 5 are shown in Table 1.
  • a Adhesive 9 applied to the back (IV) of the substrate 1, which contained the alkoxysilane Si (OCH 3 ) 4 .
  • Example 2 was carried out in the same way as Example 1. Between substrate 1 and hydrophobic coating 5, a diffusion barrier layer 7 was additionally applied against alkali ions.
  • the compositions and the layer thicknesses of the hydrophobic coating 5 and the diffusion barrier layer 7 are shown in Table 1.
  • the diffusion barrier layer 7 the deposition of alkali ions on the back side (IV) of the substrate 1 during the manufacturing process of the thin film photovoltaic module could be reduced.
  • the surface conductivity of the substrate 1 could be further reduced.
  • Example 2 Compared to Example 1, a later onset of corrosion of the photovoltaic layer structure 2 could be observed. After a test time of 500 hours, a smaller proportion of the photovoltaic layer structure 2 was corroded or delaminated. The results are shown in Table 2. Comparative example
  • Example 2 The comparative example was carried out in the same way as Example 1. In contrast to Example 1, no hydrophobic coating 5 was applied on the back side (IV) of the substrate 1. The formation of a closed water film on the back side (IV) of the substrate 1 as a result of condensed moisture in the test cell could not be prevented in this way.
  • the substrate 1 therefore had a higher surface conductivity than in the inventive examples.

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  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

L'invention concerne un module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière, comprenant au moins : - un substrat (1) (verre sodocalcique), au moins un revêtement hydrophobe (5) (contenant un alkylsilane, de préférence un alkylsilane fluoré) étant disposé sur la face arrière (IV) du substrat (1), - une structure photovoltaïque en couche (2) sur la face avant (III) du substrat (1) et - une vitre de couverture (3) dont la face arrière (II) est reliée, à travers au moins une couche intermédiaire (4) et sur toute la surface, à la face avant (III) du substrat (1).
EP12733473.8A 2011-08-29 2012-07-05 Module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière Withdrawn EP2751848A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12733473.8A EP2751848A1 (fr) 2011-08-29 2012-07-05 Module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière

Applications Claiming Priority (3)

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EP11179157 2011-08-29
PCT/EP2012/063104 WO2013029845A1 (fr) 2011-08-29 2012-07-05 Module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière
EP12733473.8A EP2751848A1 (fr) 2011-08-29 2012-07-05 Module photovoltaïque à couche mince comportant un revêtement hydrophobe sur sa face arrière

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EP2751848A1 true EP2751848A1 (fr) 2014-07-09

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US (1) US20140196771A1 (fr)
EP (1) EP2751848A1 (fr)
JP (1) JP6092217B2 (fr)
KR (1) KR20140053225A (fr)
CN (1) CN103765599A (fr)
WO (1) WO2013029845A1 (fr)

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PL3009470T3 (pl) * 2014-10-13 2021-04-06 Leonhard Kurz Stiftung & Co. Kg Korpus wielowarstwowy i sposób powlekania podłoża
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US20140196771A1 (en) 2014-07-17
JP6092217B2 (ja) 2017-03-08
CN103765599A (zh) 2014-04-30
WO2013029845A1 (fr) 2013-03-07
JP2014531745A (ja) 2014-11-27
KR20140053225A (ko) 2014-05-07

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