EP2749156A1 - Sensor with a single electrical carrier means - Google Patents

Sensor with a single electrical carrier means

Info

Publication number
EP2749156A1
EP2749156A1 EP12761920.3A EP12761920A EP2749156A1 EP 2749156 A1 EP2749156 A1 EP 2749156A1 EP 12761920 A EP12761920 A EP 12761920A EP 2749156 A1 EP2749156 A1 EP 2749156A1
Authority
EP
European Patent Office
Prior art keywords
sensor
housing
carrier means
sensor according
designed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP12761920.3A
Other languages
German (de)
French (fr)
Inventor
Thomas Fischer
Stefan GÜNTHNER
Dietmar Huber
Jakob Schillinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Continental Teves AG and Co OHG
Original Assignee
Continental Teves AG and Co OHG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Continental Teves AG and Co OHG filed Critical Continental Teves AG and Co OHG
Publication of EP2749156A1 publication Critical patent/EP2749156A1/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/10886—Other details
    • H05K2201/10924—Leads formed from a punched metal foil

Definitions

  • the invention relates to a sensor according to the preamble of claim 1 and the use of the sensor in Kraftfahrzeu ⁇ gen.
  • micromechanical sensor elements or MEMS sensor elements and application specific integrated circuits or ASICs which are initially formed as unpackaged half ⁇ conductor devices, as so-called “bare die” already by the manufacturer equipped to produce inertial sensors, which as a solderable component or devisdommon ⁇ tierter component or as so-called
  • SMD Surface Mounted Device
  • Such SMDs can be soldered directly to a printed circuit board or "PCB" in a control unit (ECU, ACU) or in a separate housing of a satellite sensor.
  • PCB printed circuit board
  • the invention is based on the object to propose a excellentgüns ⁇ term and / or compact sensor.
  • the sensor preferably has a single carrier means.
  • the carrier means is preferably designed as a leadframe. Alternatively, preferably the carrier means is formed as a printed ⁇ te or "PCB".
  • a plug Under an electrical interface, is preferably understood a plug and, preferably, a cable connection or cable outlet.
  • the at least one sensor element and the signal processing element are each arranged as unpackaged ⁇ half-conductor components on the carrier.
  • Un ⁇ ter an unpackaged semiconductor device is understood to be ⁇ vorzugt a component whose functional structure is formed of a semiconductor material and having no own Ge ⁇ housing. Unpacked, for example
  • the senor has a transfer gold housing, which encloses the at least one sensor element and the signal processing element and the carrier completely or at least partially.
  • a transfer gold housing which encloses the at least one sensor element and the signal processing element and the carrier completely or at least partially.
  • the transfer gold housing is completely or at least partially enclosed by an overmold housing.
  • the at least one sensor element is designed as an inertial sensor element.
  • the sensor is also approved as a motor vehicle sensor.
  • a transfermold housing is preferably understood to mean a transfer molding housing or a premold housing.
  • An overmold housing is preferably understood to mean an injection-molded housing or an overmold housing or a housing made of epoxy.
  • the lead frame or lead frame preferably has at least one mounting island on which at least the sensor ⁇ element and the signal processing element are arranged.
  • the at least one sensor element is preferably designed as mik ⁇ romechanisches sensor element, in particular as a micromechanical Inertialsensorelement.
  • the sensor is preferably designed such that the
  • Overmold housing has two parts, a prefabricated housing part, in which the support means and the components connected thereto are introduced and a second part with which this prefabricated housing part is closed by means of Obermoldens or an overmold housing.
  • These two housing parts are particularly preferably made of injection molding or overmold or epoxy.
  • the unpackaged semiconductor components are preferably fastened or arranged on the carrier means by means of an adhesive.
  • the at least one sensor element as well as the signal processing element and / or optionally tere electrical components, by bonding or
  • Wire bonds are at least electrically connected to the carrier and / or under ⁇ each other.
  • the fixing and electrical contacting of the at least one sensor element and the signal processing element and / or optionally further elekt ⁇ -driven components in particular "bare dies” as removablebil ⁇ det formed by flip-chip.
  • This bare dies, or called non ⁇ grabbed semiconductor devices are then ⁇ example as flipped on the lead frame or circuit board placed and soldered by reflow or hot steam.
  • the sensor preferably has one or more additional electrical components, such as at least one resistor and / or at least one capacitor and / or at least one inductance and / or at least one further integrated circuit and / or at least one varistor.
  • the housing of the sensor in particular the outer casing or Overmoldgetude one or two or meh ⁇ eral fastening means on which is particularly preferably designed so / are that the sensor is fastened by means of a screw connection.
  • the electric vehicle is preferably electrically kontak ⁇ advantage with one or more press-fit pins "press fit pins". In this case, the range in which this contacting is carried out recessed from the Overmoldgephase
  • the carrier means is electrically contacted by at least one welded-on pins, in particular ⁇ sondere with the electrical interface.
  • the fixation of the PCB in the satellite sensor is preferably carried out by constructive elements directly in the housing and cover (support domes, ribs, snap hooks, etc.). Alternatively, gluing or screwing the PCB is possible.
  • the invention also relates to the use of the sensor in motor vehicles.
  • the invention also relates to a manufacturing method of a sensor that is favorable and / or flexible.
  • the electrical and mechanical connecting ⁇ nisch carrier is initially loaded with unpackaged semiconductor elements and optionally further electronic components.
  • the unwrapped semiconductor elements and the optional further electronic components are preferably directly encapsulated so that they are in one
  • Transfer gold housing are arranged.
  • the unpackaged semiconductor elements and the optiona ⁇ len other electronic components prior to coating with the Transfermoldgeratiuse yet with a Vergussmass or "globe top” are covered, which then also in the
  • Transfermold housing is injected.
  • a sensor as a solderable component or surface mounted component or as so-called
  • SMD Surface Mounted Device
  • FIGS. 3 and 4 show exemplary production methods.
  • FIG. 1 shows a Ron sensor from two perspectives, which has a leadframe as carrier means 4.
  • the sensor comprises two glued-on sensor elements 1 and a signal processing element 2, which are electrically contacted by means of bonding wires 10.
  • Sensor elements 1 and a Sig ⁇ nal kauselement 2 are surrounded by a Transfermoldgephaseuse 5 or injected accordingly.
  • the lead frame 4 includes two further encapsulation as Transfermoldgephaseuse 5.
  • FIG. 2 shows an exemplary sensor as a surface-mounted component or so-called
  • SMD Surface Mounted Device
  • a sensor element 1 and a signal processing element 2, which are arranged on the support means 4, for example as a conductor ⁇ plate or "PCB.”
  • PCB conductor ⁇ plate
  • Printed circuit board 4 is contacted by Einpresspins 11 electrically, wherein the contact region of the housing of the sensor, a
  • Overmold housing 7 are recessed.
  • the housing has a recess / recess in this contacting region, in FIG. 2 b) arranged next to the housing 7 in this contacting region.
  • FIG. 1 An exemplary manufacturing method is illustrated with reference to FIG. Instead of conventionally two packaging ⁇ step for the construction of a satellite sensor, only one step is needed - the "bare dies" are arranged / equipped on the circuit board as a support means and there ⁇ after the contacting and training of the housing takes place SMDs omitted that would be too ⁇ additionally connected to the carrier and then would take up space.
  • the construction and connection technology of the bare die and the flip chip process is identical. It can be used the same front-end equipment to Her ⁇ position.
  • the printed circuit board can be completely or partially encapsulated by Transfermold.
  • the modular production method illustrated in FIG. 4 preferably allows or comprises two main variants, as illustrated schematically by way of example:
  • the populated leadframe having the contacted Bare This is preferred by a glob top or potting and after ⁇ following transfer mold or a total / Nachumspritzungsvorgang, for example by means of epoxy, ge ⁇ protects. It creates an SMD, so one
  • the populated leadframe with the contacted bare die is preferably ge ⁇ protected by a glob top or casting and a subsequent transfer mold or a complete / Nachumspritzungsvorgang, for example by means of epoxy.
  • the contact pins are previously welded to the leadframe or, alternatively, a cable can be attached by so-called crimping.
  • the fixing members can be inserted in the mold and introduced with or subsequently injection-molded, ⁇ example, by heat embedding and / or ultrasonic welding. After that 3 subvariants are possible:
  • the populated leadframe is partially encapsulated with an open housing and sealed with a potting and / or lid.
  • the lid may be made of a metallic or non-metallic material.
  • passive elements can be equipped to who, as exemplified schematically illustrates ⁇ ⁇ based Figure 1 additionally with or without protection (glob top and Transfer Mold).
  • any modular extensions of the leadframe are possible, which carry additional additional circuits, as illustrated schematically by way of example with reference to FIG. 1.
  • These may be other bare dies (MEMS, ASIC) or other components (R, C, IC, diodes, vanisters, LEDs, etc.).

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Casings For Electric Apparatus (AREA)

Abstract

The invention relates to a sensor, comprising at least one sensor element (1), at least a signal processing element (2), a housing (7), which has at least one attachment means, and an electrical interface for electrically connecting the sensor, wherein the sensor has an electrically and mechanically connecting carrier means (4) on which the at least one sensor element (1) and the signal processing element (2) are arranged and are electrically connected thereto, wherein the carrier means (4) is also at least electrically connected to the electrical interface.

Description

Sensor mit einem einzigen elektrischen Trägermittel Sensor with a single electrical carrier
Die Erfindung betrifft einen Sensor gemäß Oberbegriff von Anspruch 1 sowie die Verwendung des Sensors in Kraftfahrzeu¬ gen . The invention relates to a sensor according to the preamble of claim 1 and the use of the sensor in Kraftfahrzeu ¬ gen.
Üblicherweise werden mikromechanische Sensorelemente bzw. MEMS-Sensorelemente und applikationsspezifische integrierte Schaltungen bzw. ASICs, die zunächst als unverpackte Halb¬ leiterbauelemente ausgebildet sind, als so genannte „Bare Dies" bereits vom Hersteller zu fertigen Inertialsensoren bestückt, welche als lötfähiges Bauteil bzw. oberflächenmon¬ tiertes Bauelement bzw. als so genanntes Typically, micromechanical sensor elements or MEMS sensor elements and application specific integrated circuits or ASICs, which are initially formed as unpackaged half ¬ conductor devices, as so-called "bare die" already by the manufacturer equipped to produce inertial sensors, which as a solderable component or oberflächenmon ¬ tierter component or as so-called
„Surface Mounted Device" (SMD) , das mit einem Gehäuse gegen Umwelteinflüsse geschützt und nach außen kontaktiert ist, ausgebildet .  "Surface Mounted Device" (SMD), which is protected with a housing against environmental influences and contacted to the outside, formed.
Solche SMDs können direkt auf eine Leiterplatte bzw. „PCB" in ein Steuergerät (ECU, ACU) oder in ein separates Gehäuse eines Satelliten-Sensors gelötet werden. Such SMDs can be soldered directly to a printed circuit board or "PCB" in a control unit (ECU, ACU) or in a separate housing of a satellite sensor.
Der Erfindung liegt die Aufgabe zu Grunde einen kostengüns¬ tigen und/oder kompakten Sensor vorzuschlagen. The invention is based on the object to propose a kostengüns ¬ term and / or compact sensor.
Diese Aufgabe wird erfindungsgemäß gelöst durch den Sensor gemäß Anspruch 1. Der Sensor weist vorzugsweise ein einziges Trägermittel auf. This object is achieved by the sensor according to claim 1. The sensor preferably has a single carrier means.
Das Trägermittel ist bevorzugt als Leadframe ausgebildet. Alternativ vorzugsweise ist das Trägermittel als Leiterplat¬ te bzw. „PCB" ausgebildet. The carrier means is preferably designed as a leadframe. Alternatively, preferably the carrier means is formed as a printed ¬ te or "PCB".
Unter einer elektrischen Schnittstelle, wird bevorzugt ein Stecker und alternativ vorzugsweise ein Kabelanschluss bzw. Kabelabgang verstanden. Under an electrical interface, is preferably understood a plug and, preferably, a cable connection or cable outlet.
Es ist bevorzugt, dass das wenigstens eine Sensorelement und das Signalverarbeitungselement jeweils als unverpackte Halb¬ leiterbauelemente auf dem Trägermittel angeordnet sind. Un¬ ter einem unverpackten Halbleiterbauelement versteht man be¬ vorzugt ein Bauelement dessen funktionale Struktur aus einem Halbleitermaterial ausgebildet ist und das kein eigenes Ge¬ häuse aufweist. Unter unverpackt wird beispielsweise It is preferred that the at least one sensor element and the signal processing element are each arranged as unpackaged ¬ half-conductor components on the carrier. Un ¬ ter an unpackaged semiconductor device is understood to be ¬ vorzugt a component whose functional structure is formed of a semiconductor material and having no own Ge ¬ housing. Unpacked, for example
„siliziumverpackt" bzw. auf „Wafer-Ebene" verpackt bzw. ein „bare die" verstanden. "Silicon-packed" or "wafer-level" packed or a "bare the" understood.
Es ist bevorzugt, dass der Sensor ein Transfermoldgehäuse aufweist, welches das wenigstens eine Sensorelement und das Signalverarbeitungselement und das Trägermittel vollständig oder zumindest teilweise umschließt. Insbesondere sind dabei das wenigstens eine Sensorelement und das Signalverarbei¬ tungselement zumindest teilweise von einer Vergussmasse bzw. einem „globe top" bedeckt, innerhalb des It is preferred that the sensor has a transfer gold housing, which encloses the at least one sensor element and the signal processing element and the carrier completely or at least partially. In particular, are at least one sensor element and the Signalverarbei ¬ processing element at least partially covered by a sealing compound or a "globe top", within the
Transfermoldgehäuses . Transfermold housing.
Vorzugsweise ist das Transfermoldgehäuse vollständig oder zumindest teilweise von einem Overmoldgehäuse umschlossen. Preferably, the transfer gold housing is completely or at least partially enclosed by an overmold housing.
Es ist bevorzugt, dass das wenigstens eine Sensorelement als Inertialsensorelement ausgebildet ist. Vorzugsweise ist der Sensor als Satelliten-Sensor ausgebil¬ det, insbesondere als Kraftfahrzeugsensor. It is preferred that the at least one sensor element is designed as an inertial sensor element. Preferably, the sensor is ausgebil ¬ det as a satellite sensor, in particular as a motor vehicle sensor.
Unter einem Transfermoldgehäuse versteht man bevorzugt ein Spritzpressgehäuse bzw. ein Premoldgehäuse . A transfermold housing is preferably understood to mean a transfer molding housing or a premold housing.
Unter einem Overmoldgehäuse versteht man vorzugsweise ein Spritzgussgehäuse bzw. ein Overmoldgehäuse bzw. ein Gehäuse aus Epoxy. An overmold housing is preferably understood to mean an injection-molded housing or an overmold housing or a housing made of epoxy.
Der Leadframe bzw. Leiterrahmen weist bevorzugt wenigstens eine Bestückungsinsel auf, auf welcher zumindest das Sensor¬ element und das Signalverarbeitungselement angeordnet sind. The lead frame or lead frame preferably has at least one mounting island on which at least the sensor ¬ element and the signal processing element are arranged.
Das mindestens eine Sensorelement ist vorzugsweise als mik¬ romechanisches Sensorelement ausgebildet, insbesondere als mikromechanisches Inertialsensorelement . The at least one sensor element is preferably designed as mik ¬ romechanisches sensor element, in particular as a micromechanical Inertialsensorelement.
Der Sensor ist bevorzugt so ausgebildet, dass das The sensor is preferably designed such that the
Overmoldgehäuse zwei Teile aufweist, einen vorgefertigten Gehäuseteil, in welchen das Trägermittel und die mit diesem verbundenen Bauteile eingebracht sind und einen zweiten Teil, mit welchen dieses vorgefertigte Gehäuseteil mittels Obermoldens bzw. eines Overmoldgehäuses geschlossen wird. Diese beiden Gehäuseteile bestehen besonders bevorzugt aus Spritzguss bzw. Overmold bzw. Epoxy. Overmold housing has two parts, a prefabricated housing part, in which the support means and the components connected thereto are introduced and a second part with which this prefabricated housing part is closed by means of Obermoldens or an overmold housing. These two housing parts are particularly preferably made of injection molding or overmold or epoxy.
Die unverpackten Halbleiterbauelemente sind vorzugsweise mittels eines Klebers auf dem Trägermittel befestigt bzw. angeordnet . The unpackaged semiconductor components are preferably fastened or arranged on the carrier means by means of an adhesive.
Es ist zweckmäßig, dass das wenigstens eine Sensorelement sowie das Signalverarbeitungselement und/oder optional wei- tere elektrische Bauelemente, mittels Bondens bzw. It is expedient that the at least one sensor element as well as the signal processing element and / or optionally tere electrical components, by bonding or
Drahtbondens zumindest mit dem Trägermittel und/oder unter¬ einander elektrisch verbunden sind. Wire bonds are at least electrically connected to the carrier and / or under ¬ each other.
Alternativ vorzugsweise ist die Fixierung und elektrische Kontaktierung des zumindest einen Sensorelements sowie das Signalverarbeitungselement und/oder optional weiterer elekt¬ rischer Bauelemente, insbesondere als „bare dies" ausgebil¬ det, per Flip-Chip ausgebildet. Dazu werden besonders bevor¬ zugt entweder "Solder Balls" bzw. Lötkugeln, "Copper Alternatively, preferably, the fixing and electrical contacting of the at least one sensor element and the signal processing element and / or optionally further elekt ¬-driven components, in particular "bare dies" as ausgebil ¬ det formed by flip-chip. For this purpose, especially before ¬ Trains t either "Solder Balls "or solder balls," Copper
Pillars" bzw. Kupferdome und/oder Lötpads auf die Oberseite der „bare dies" aufgebracht. Diese bare dies, bzw. unver¬ packte Halbleiterbauelemente genannt, sind dann beispiels¬ weise umgedreht auf dem Leadframe oder der Leiterplatte platziert und werden per Reflow- oder Heißdampf gelötet. Pillars "or copper dome and / or solder pads applied to the top of the" bare dies ". This bare dies, or called non ¬ grabbed semiconductor devices are then ¬ example as flipped on the lead frame or circuit board placed and soldered by reflow or hot steam.
Der Sensor weist bevorzugt ein oder mehrere zusätzliche elektrische Bauelemente, wie zumindest einen Widerstand und/oder wenigstens eine Kapazität und/oder mindestens eine Induktivität und/oder zumindest eine weitere integrierte Schaltung und/oder wenigstens einen Varistor auf. The sensor preferably has one or more additional electrical components, such as at least one resistor and / or at least one capacitor and / or at least one inductance and / or at least one further integrated circuit and / or at least one varistor.
Vorzugsweise weist das Gehäuse des Sensors, insbesondere das äußere Gehäuse bzw. Overmoldgehäuse eine oder zwei oder meh¬ rere Befestigungseinrichtungen auf, welche besonders bevorzugt so ausgebildet ist/sind, dass der Sensor mittels einer Schraubverbindung befestigbar ist. Preferably, the housing of the sensor, in particular the outer casing or Overmoldgehäuse one or two or meh ¬ eral fastening means on which is particularly preferably designed so / are that the sensor is fastened by means of a screw connection.
Das elektrische Trägermittel ist bevorzugt mit einem oder mehreren Einpresspins „press fit pins" elektrisch kontak¬ tiert. Dabei ist der Bereich in welchem diese Kontaktierung durchgeführt wird ausgespart von dem Overmoldgehäuse The electric vehicle is preferably electrically kontak ¬ advantage with one or more press-fit pins "press fit pins". In this case, the range in which this contacting is carried out recessed from the Overmoldgehäuse
und/oder dem Transfermoldgehäuse . Alternativ vorzugsweise erfolgt die Kontaktierung durch Lötstifte aus einem leit- und lötfähigen Material. Diese könne einen beliebigen Querschnitt haben. Typischerweise sind diese rund oder quadratisch. Diese werden mit der PCB verlötet sog. Durchsteckmontage (THT-Technologie = Through- Hole-Technologie) . and / or the transfermold housing. Alternatively, preferably, the contact is made by solder pins made of a conductive and solderable material. This could have any cross section. Typically these are round or square. These are soldered to the PCB so-called through-hole mounting (THT technology = through-hole technology).
Es ist bevorzugt, dass das Trägermittel mittels wenigstens eines angeschweißten Pins elektrisch kontaktiert ist, insbe¬ sondere mit der elektrischen Schnittstelle. It is preferred that the carrier means is electrically contacted by at least one welded-on pins, in particular ¬ sondere with the electrical interface.
Die Fixierung der PCB in dem Satelliten-Sensor erfolgt vorzugsweise durch konstruktive Elemente direkt im Gehäuse und Deckel (Auflagedome, Rippen, Rasthaken, etc.). Alternativ ist ein Einkleben oder Verschrauben der PCB möglich. The fixation of the PCB in the satellite sensor is preferably carried out by constructive elements directly in the housing and cover (support domes, ribs, snap hooks, etc.). Alternatively, gluing or screwing the PCB is possible.
Zum Schutz vor Umwelteinflüssen wird nach Einbau der PCB in das Gehäuse des Satelliten-Sensors dieses Gehäuse zweckmäßi¬ gerweise mittels einer Vergussmasse oder mit einem Deckel aus metallischem oder nicht-metallischem Material verschlossen . To protect against environmental influences, this housing zweckmäßi ¬ gerweise after installation of the PCB in the housing of the satellite sensor is closed by means of a potting compound, or with a lid made of metallic or non-metallic material.
Die Erfindung bezieht sich außerdem auf die Verwendung des Sensors in Kraftfahrzeugen. The invention also relates to the use of the sensor in motor vehicles.
Insbesondere bezieht sich die Erfindung außerdem auf ein Herstellungsverfahren eines Sensors, das günstig und/oder flexibel ist. Dabei wird zunächst das elektrisch und mecha¬ nisch verbindende Trägermittel mit unverpackten Halbleiterelementen sowie optional weiteren elektronischen Bauelementen bestückt. Die unverpackten Halbleiterelemente und die optionalen weiteren elektronischen Bauelemente werden bevorzugt direkt umspritzt, so dass sie in einem In particular, the invention also relates to a manufacturing method of a sensor that is favorable and / or flexible. Here, the electrical and mechanical connecting ¬ nisch carrier is initially loaded with unpackaged semiconductor elements and optionally further electronic components. The unwrapped semiconductor elements and the optional further electronic components are preferably directly encapsulated so that they are in one
Transfermoldgehäuse angeordnet sind. Alternativ vorzugsweise werden die unverpackten Halbleiterelemente und die optiona¬ len weiteren elektronischen Bauelemente vor der Umspritzung mit dem Transfermoldgehäuse erst noch mit einer Vergussmass bzw. „globe top" bedeckt, die dann ebenfalls in das Transfer gold housing are arranged. Alternatively preferably the unpackaged semiconductor elements and the optiona ¬ len other electronic components prior to coating with the Transfermoldgehäuse yet with a Vergussmass or "globe top" are covered, which then also in the
Transfermoldgehäuse eingespritzt wird. Transfermold housing is injected.
Anschließend wird aus diesen teilfertigen Sensoren mittels einer Overmoldumspritzung bzw. einem Overmoldgehäuse  Subsequently, these semi-finished sensors by means of an overmoldum extrusion or an overmold housing
und/oder einem zusätzlichen vorgefertigten Gehäuse wahlweise ein Sensor als lötfähiges Bauteil bzw. oberflächenmontiertes Bauelement bzw. als so genanntes and / or an additional prefabricated housing optionally a sensor as a solderable component or surface mounted component or as so-called
„Surface Mounted Device" ( SMD) erzeugt/gefertigt oder ein Sensor als Satelliten-Sensor.  "Surface Mounted Device" (SMD) created / manufactured or a sensor as a satellite sensor.
Es zeigen in schematischer, beispielhafter Darstellung They show in a schematic, exemplary representation
Fig. 1 und 2 Ausführungsbeispiele des Sensors, 1 and 2 embodiments of the sensor,
Fig. 3 und 4 beispielhafte Herstellungsverfahren. FIGS. 3 and 4 show exemplary production methods.
In Fig. 1 ist ein Ron-Sensor aus zwei Perspektiven dargestellt, welcher einen Leadframe als Trägermittel 4 aufweist. Der Sensor umfasst zwei aufgeklebte Sensorelemente 1 sowie ein Signalverarbeitungselement 2, die mittels Bonddrähten 10 elektrisch kontaktiert sind. Sensorelemente 1 sowie ein Sig¬ nalverarbeitungselement 2 sind von einem Transfermoldgehäuse 5 umgeben bzw. entsprechend eingespritzt. Der Leadframe 4 umfasst zwei weitere Umspritzungen als Transfermoldgehäuse 5. Darüber hinaus ist der Leadframe mit zusätzlichen elekt¬ ronischen Bauelementen 8, wie beispielsweise „R", „C", „IC", Dioden oder wenigstens einem Varistor bestückt. FIG. 1 shows a Ron sensor from two perspectives, which has a leadframe as carrier means 4. The sensor comprises two glued-on sensor elements 1 and a signal processing element 2, which are electrically contacted by means of bonding wires 10. Sensor elements 1 and a Sig ¬ nalverarbeitungselement 2 are surrounded by a Transfermoldgehäuse 5 or injected accordingly. The lead frame 4 includes two further encapsulation as Transfermoldgehäuse 5. In addition, the lead frame with additional elekt ¬ tronic components 8, such as "R", "C", "IC", diodes, or fitted to at least one varistor.
Fig. 2 zeigt einen beispielhaften Sensor als oberflächenmontiertes Bauelement bzw. so genanntes FIG. 2 shows an exemplary sensor as a surface-mounted component or so-called
„Surface Mounted Device" (SMD) ausgebildet. Der Sensor weist ein Sensorelement 1 und ein Signalverarbeitungselement 2 auf, die auf dem Trägermittel 4, beispielgemäß als Leiter¬ platte bzw. „PCB" ausgebildet, angeordnet sind. Leiterplatte 4 ist mittels Einpresspins 11 elektrisch kontaktiert, wobei der Kontaktbereich von Gehäuse des Sensors, einem "Surface Mounted Device" (SMD) is formed a sensor element 1 and a signal processing element 2, which are arranged on the support means 4, for example as a conductor ¬ plate or "PCB." Printed circuit board 4 is contacted by Einpresspins 11 electrically, wherein the contact region of the housing of the sensor, a
Overmoldgehäuse 7 ausgespart sind. In Fig. 2 a) weist das Gehäuse eine Ausnehmung/ Aussparung in diesem Kontaktie- rungsbereich auf, in Fig. 2 b) in dieser Kontaktierungsbe- reich neben dem Gehäuse 7 angeordnet. Overmold housing 7 are recessed. In FIG. 2 a), the housing has a recess / recess in this contacting region, in FIG. 2 b) arranged next to the housing 7 in this contacting region.
Anhand der Fig. 3 ist ein beispielhaftes Herstellungsverfahren veranschaulicht. Statt konventionell zwei Verpackungs¬ schritt für den Aufbau eines Satelliten-Sensors wird nur noch ein Schritt benötigt - die „bare dies" werden auf der Leiterplatte als Trägermittel angeordnet/ bestückt und da¬ nach erfolgt die Kontaktierung und Ausbildung des Gehäuses. Der Aufbau eines separaten SMDs entfällt, das dann noch zu¬ sätzlich mit dem Trägermittel verbunden werden müsste und Raum beanspruchen würde. An exemplary manufacturing method is illustrated with reference to FIG. Instead of conventionally two packaging ¬ step for the construction of a satellite sensor, only one step is needed - the "bare dies" are arranged / equipped on the circuit board as a support means and there ¬ after the contacting and training of the housing takes place SMDs omitted that would be too ¬ additionally connected to the carrier and then would take up space.
- Für PCB-Sensoren und Satelliten-Sensoren ist die Aufbau- und Verbindungstechnik der Bare Dies und der Flip-Chip Pro- zess identisch. Es kann gleiches Frontend-Equipment zur Her¬ stellung genutzt werden. - For PCB sensors and satellite sensors, the construction and connection technology of the bare die and the flip chip process is identical. It can be used the same front-end equipment to Her ¬ position.
- Die Fertigungsprozesse Glob Top und Transfermold zum  - The manufacturing processes Glob Top and Transfermold for
Schutz der Bare Dies sind identisch. Die Leiterplatte kann komplett oder teilweise per Transfermold umspritzt werden. Protection of the Bare These are identical. The printed circuit board can be completely or partially encapsulated by Transfermold.
Das in Fig. 4 dargestellte modulare Herstellungsverfahren ermöglicht bzw. umfasst bevorzugt zwei Hauptvarianten, wie beispielhaft schematisch dargestellt: The modular production method illustrated in FIG. 4 preferably allows or comprises two main variants, as illustrated schematically by way of example:
"Onboard" Variante (SMD) : "Onboard" variant (SMD):
Der bestückte Leadframe mit den kontaktierten Bare Dies wird bevorzugt durch einen Glob Top bzw. Verguss und einem nach¬ folgenden Transfer Mold bzw. einen Gesamt- /Nachumspritzungsvorgang, beispielsweise mittels Epoxy, ge¬ schützt. Es entsteht ein SMD, also ein The populated leadframe having the contacted Bare This is preferred by a glob top or potting and after ¬ following transfer mold or a total / Nachumspritzungsvorgang, for example by means of epoxy, ge ¬ protects. It creates an SMD, so one
oberflächenmontierbares Bauelement, surface mountable device,
(Surface Mounted Device) , das direkt auf die PCB, „Printed Circuit Board" bzw. elektronische Leiterplatte eines Steuer¬ gerätes gelötet wird. Als Lötverfahren sind Reflow- oder Heißdampflöten geeignet. (Surface Mounted Device), which is soldered directly to the PCB, "Printed Circuit Board" and electronic circuit board of a control ¬ device. As a soldering reflow soldering or hot steam are suitable.
"Satellite" Variante (IS) : "Satellite" variant (IS):
Der bestückte Leadframe mit den kontaktierten Bare Dies wird vorzugsweise durch einen Glob Top bzw. Verguss und einem nachfolgenden Transfer Mold bzw. einen Gesamt- /Nachumspritzungsvorgang, beispielsweise mittels Epoxy, ge¬ schützt . The populated leadframe with the contacted bare die is preferably ge ¬ protected by a glob top or casting and a subsequent transfer mold or a complete / Nachumspritzungsvorgang, for example by means of epoxy.
Die Kontaktpins werden vorher an den Leadframe angeschweißt oder alternativ kann ein Kabel durch sogenanntes Crimpen bzw. Bördeln angebracht werden.  The contact pins are previously welded to the leadframe or, alternatively, a cable can be attached by so-called crimping.
Die Befestigungsteile können im Werkzeug eingelegt und mit umspritzt oder nachträglich eingebracht werden, beispiels¬ weise durch Warmeinbetten und/oder Ultraschallschweißen. Danach sind 3 Untervarianten möglich: The fixing members can be inserted in the mold and introduced with or subsequently injection-molded, ¬ example, by heat embedding and / or ultrasonic welding. After that 3 subvariants are possible:
a) Der bestückte Leadframe wird komplett mit dem Gehäuse umspritzt . a) The populated leadframe is completely encapsulated with the housing.
b) Der bestückte Leadframe wird mit einem offenen Gehäuse teilweise umspritzt und mit einem Verguss und/oder Deckel verschlossen. Der Deckel kann aus einem metallischen oder nicht-metallischen Material bestehen. b) The populated leadframe is partially encapsulated with an open housing and sealed with a potting and / or lid. The lid may be made of a metallic or non-metallic material.
c) Der bestückte Leadframe wird mit einem Halter (sog. Car- rier) aus Kunststoff teilumspritzt und danach komplett mit dem Gehäuse umspritzt. Das vorgeschlagene Verfahren und seine Varianten bzw. der damit hergestellte Sensor weisen beispielgemäß folgende Vor¬ teile auf: c) The assembled leadframe is partially molded with a holder (so-called Carrier) made of plastic and then completely encapsulated with the housing. The proposed method and its variants or the sensor produced therewith have, for example, the following advantages :
- Für beide Hauptvarianten sind die Prozesse der Bestückung, der Kontaktierung und dem Schutz der Bare Dies identisch.- For both main variants, the processes of assembly, contacting and protection of the bare dies are identical.
- Statt konventionell zwei Verpackungsschritt für den Aufbau der Satelliten (IS) wird nur noch ein Schritt benötigt (Ba- re-Die Satellitenprodukt) . Der Aufbau eines separaten SMD entfällt . - Instead of the conventional two packaging steps for the construction of the satellites (IS), only one step is needed (Bear-The satellite product). The structure of a separate SMD is eliminated.
- Für Onboard- und Satellitenlösung (SMD und IS) ist die Aufbau- und Verbindungstechnik der Bare Dies identisch, d.h. gleiche Fertigungseinrichtungen (Frontend-Equipment ) .  For onboard and satellite solutions (SMD and IS), the construction and connection technique of the bare dies is identical, i. Same production facilities (front-end equipment).
- Die Fertigungsprozesse Glob Top und Transfermold zum  - The manufacturing processes Glob Top and Transfermold for
Schutz der Bare Dies sind identisch. Protection of the Bare These are identical.
- Auf dem Leadframe können zusätzlich passive Elemente ohne oder mit Schutz (Glob Top und Transfer Mold) bestückt wer¬ den, wie beispielhaft anhand Fig. 1 schematisch veranschau¬ licht . - On the leadframe passive elements can be equipped to who, as exemplified schematically illustrates ¬ ¬ based Figure 1 additionally with or without protection (glob top and Transfer Mold)..
- Weiterhin sind beliebige modulare Erweiterungen des Lead- frames möglich, die weitere Zusatzbeschaltungen tragen, wie beispielhaft anhand Fig. 1 schematisch veranschaulicht. Dies können weiteren Bare Dies (MEMS, ASIC) oder andere Bauteile sein (R, C, IC, Dioden, Vanister, LED, etc.) .  Furthermore, any modular extensions of the leadframe are possible, which carry additional additional circuits, as illustrated schematically by way of example with reference to FIG. 1. These may be other bare dies (MEMS, ASIC) or other components (R, C, IC, diodes, vanisters, LEDs, etc.).
- Alle Module können ohne oder mit Schutz ausgeführt werden (Glob Top + Transfer Mold) . Bei entsprechender Auslegung ist für den alle Module nur ein Mold-Werkzeug Schutz nötig.  - All modules can be executed without or with protection (Glob Top + Transfer Mold). With appropriate design, only one mold tool protection is required for all modules.

Claims

Patentansprüche claims
Sensor, umfassend wenigstens ein Sensorelement (1), zu¬ mindest ein Signalverarbeitungselement (2), ein Gehäuse (7), das wenigstens ein Befestigungsmittel aufweist, so¬ wie eine elektrische Schnittstelle zur elektrischen An- bindung des Sensors, dadurch gekennzeichnet, dass der Sensor ein elektrisch und mechanisch verbindendes Trägermittel (4) aufweist, auf welchem das wenigstens eine Sensorelement (1) und das Signalverarbeitungsele¬ ment (2) angeordnet sind und mit diesem elektrisch ver¬ bunden sind, wobei das Trägermittel (4) auch mit der elektrischen Schnittstelle zumindest elektrisch verbunden ist. Sensor, comprising at least one sensor element (1), ¬ at least one signal processing element (2), a housing (7) having at least one fastening means, ¬ such as an electrical interface for electrical connection of the sensor, characterized in that the sensor is an electrically and mechanically connecting carrier means (4), on which the at least one sensor element (1) and the Signalverarbeitungsele ¬ ment (2) are arranged and are connected to this electrically ver ¬ connected, wherein the carrier means (4) with the electrical Interface is at least electrically connected.
Sensor nach Anspruch 1, dadurch gekennzeichnet, dass der Sensor ein einziges Trägermittel (4) aufweist. Sensor according to claim 1, characterized in that the sensor comprises a single carrier means (4).
Sensor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Trägermittel (4) als Leadframe ausgebildet ist. Sensor according to claim 1 or 2, characterized in that the carrier means (4) is designed as a leadframe.
Sensor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass das Trägermittel (4) als Leiterplatte ausgebildet ist . Sensor according to claim 1 or 2, characterized in that the carrier means (4) is designed as a printed circuit board.
Sensor nach mindestens einem der Ansprüche 1 bis 4, da¬ durch gekennzeichnet, dass das wenigstens eine Sensor¬ element (1) und das Signalverarbeitungselement (2) je¬ weils als unverpackte Halbleiterbauelemente auf dem Trä¬ germittel (4) angeordnet sind. Sensor according to at least one of claims 1 to 4, since ¬ characterized by that the at least one sensor ¬ element (1) and the signal processing element (2) are sorted ¬ weils arranged as unpackaged semiconductor devices on the Trä ¬ germittel (4).
6. Sensor nach mindestens einem der Ansprüche 1 bis 5, da- durch gekennzeichnet, dass der Sensor ein 6. Sensor according to at least one of claims 1 to 5, character- ized in that the sensor a
Transfermoldgehäuse (5 ) aufweist, welches das wenigstens eine Sensorelement (1) und das Signalverarbeitungsele¬ ment (2) und das Trägermittel (4) vollständig oder zu¬ mindest teilweise umschließt. Transfer gold housing (5), which at least a sensor element (1) and the Signalverarbeitungsele ¬ element (2) and the carrier means (4) completely or at least ¬ partially encloses.
7. Sensor nach Anspruch 6, dadurch gekennzeichnet, dass das das wenigstens eine Sensorelement (1) und das Signalver¬ arbeitungselement (2) zumindest teilweise von einer Vergussmasse bedeckt sind, innerhalb des 7. Sensor according to claim 6, characterized in that the at least one sensor element (1) and the Signalver ¬ processing element (2) are at least partially covered by a potting compound, within the
Transfermoldgehäuses .  Transfermold housing.
Sensor nach Anspruch 6 oder 7, dadurch gekennzeichnet, dass das Transfermoldgehäuse (5) vollständig oder zumin¬ dest teilweise von einem Overmoldgehäuse (7) umschlossen ist . The sensor of claim 6 or 7, characterized in that the Transfermoldgehäuse (5) is enclosed completely or at least partially by a ¬ Overmoldgehäuse (7).
9. Sensor nach mindestens einem der Ansprüche 1 bis 8, da¬ durch gekennzeichnet, dass das wenigstens eine Sensor¬ element (1) als Inertialsensorelement ausgebildet ist. 9. Sensor according to at least one of claims 1 to 8, since ¬ characterized in that the at least one sensor ¬ element (1) is designed as an inertial sensor element.
Sensor nach mindestens einem der Ansprüche 1 bis 9, da durch gekennzeichnet, dass der Sensor als Satelliten- Sensor ausgebildet ist, insbesondere als Kraftfahrzeug sensor . Sensor according to at least one of claims 1 to 9, characterized in that the sensor is designed as a satellite sensor, in particular as a motor vehicle sensor.
EP12761920.3A 2011-08-24 2012-08-24 Sensor with a single electrical carrier means Ceased EP2749156A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102011081505 2011-08-24
DE102011081512 2011-08-24
PCT/EP2012/066503 WO2013026923A1 (en) 2011-08-24 2012-08-24 Sensor with a single electrical carrier means

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EP2749156A1 true EP2749156A1 (en) 2014-07-02

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US (1) US9645163B2 (en)
EP (1) EP2749156A1 (en)
KR (1) KR102182947B1 (en)
CN (2) CN107954393B (en)
DE (1) DE102012215091A1 (en)
WO (1) WO2013026923A1 (en)

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Publication number Publication date
CN103748976B (en) 2018-01-02
DE102012215091A1 (en) 2013-02-28
CN103748976A (en) 2014-04-23
US20140202246A1 (en) 2014-07-24
US9645163B2 (en) 2017-05-09
KR20140054333A (en) 2014-05-08
CN107954393B (en) 2021-06-22
KR102182947B1 (en) 2020-11-25
CN107954393A (en) 2018-04-24
WO2013026923A1 (en) 2013-02-28

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