EP2747190A1 - Kapazitive Mems-Komponente mit Erdübertragungslinie - Google Patents

Kapazitive Mems-Komponente mit Erdübertragungslinie Download PDF

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Publication number
EP2747190A1
EP2747190A1 EP13198695.2A EP13198695A EP2747190A1 EP 2747190 A1 EP2747190 A1 EP 2747190A1 EP 13198695 A EP13198695 A EP 13198695A EP 2747190 A1 EP2747190 A1 EP 2747190A1
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EP
European Patent Office
Prior art keywords
transmission line
stack
membrane
substrate
pillars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP13198695.2A
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English (en)
French (fr)
Other versions
EP2747190B1 (de
Inventor
Paolo MARTINS
Shailendra Bansropun
Matthieu Le Bailiff
Afshin Ziaei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
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Thales SA
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Publication of EP2747190A1 publication Critical patent/EP2747190A1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • micro-switches also called “switches” made in MEMS technology
  • MEMS Micro Electro Mechanical System
  • micro-electromechanical system micro-electromechanical system
  • the preferred field of application concerns radio frequency systems and more specifically applications in the field of radars including using frequencies between 8 and 12 GHz.
  • the proposed MEMS components can, however, find applications in very high frequency domains of the order of 150 GHz.
  • the operating principle of the MEMS components is as follows.
  • a control electrode By means of a control electrode, an electrostatic force is exerted on a mechanical object of very small dimensions arranged in the vicinity of a radio frequency transmission line.
  • the displacement or deformation of the object subjected to this force varies an electronic parameter which is most often a resistance or a capacity. This variation interrupts or restores the transmission of radio frequencies in the transmission line.
  • a capacitive-type switch it is preferable to use "bridge" or suspended-membrane devices.
  • FIG. Figures 1a and 1b respectively represent a state in which the signal passes and a state in which the signal is short-circuited.
  • a membrane or a metal beam 1 of small thickness, of the order of 1 micron, is held suspended by pillars 2a, 2b above a radiofrequency transmission line 3 made on the surface of a substrate 4 in which a Sig signal is propagated.
  • a dielectric layer 5 is deposited on the surface of the transmission line 3.
  • Conductive lines 6a, 6b are connected to the transmission line 3 and connected to the ground M.
  • the membrane 1 may be subjected to an electrical voltage by means of a control electrode. In the absence of applied voltage, the membrane 1 is suspended above the transmission line 3 at a certain height or a certain "gap" that can be likened to a first capacitance, typically the height is greater than 1 micron. When a sufficiently high voltage is applied to the control electrode, the membrane 1 is subjected to an electrostatic force which deforms it. The membrane 1 is then separated from the transmission line 3 by a dielectric layer forming a second capacitance which is much greater than the first formed by the air gap. As a result, radio frequencies are short-circuited to ground M.
  • the variation of this capacity can be used to make a microswitch.
  • the MEMS components as described above require a voltage generally greater than 10V to allow switching, and a switching time of a few microseconds.
  • miniMEMS component a MEMS component in which the dimensions are reduced by a factor of about 10.
  • the figure 2 represents a section view of a miniMEMS component produced according to a conventional technology proposed in the literature.
  • the miniMEMS component comprises a stack comprising a substrate 4, a transmission line 3, a layer of dielectric material 5 covering the transmission line 3, pillars 2a; 2b supporting a membrane 1.
  • the membrane 1 has a non-planar topology. This topology is the consequence of the process used for the development of the miniMEMS component.
  • the conventional method of developing a miniMEMS component comprises five main steps.
  • the first step consists of the deposition of the transmission line 3 in a longitudinal direction d Long on the substrate 4, the Long longitudinal direction being parallel to the direction of propagation of the radio frequencies inside the transmission line 3.
  • the second step consists in the deposition of the dielectric layer 5.
  • the third step consists in the deposition of a sacrificial layer 7.
  • the fourth step consists in the realization of the pillars 2a; 2b and the fifth membrane deposition step 1. At the end of miniMEMS component development process, the sacrificial layer 7 is eliminated.
  • the third step of producing the sacrificial layer 7 is carried out by applying a resin by spin coating known as "spin coating” in the English language, or by a chemical vapor deposition technique better known under the name “Chemical vapor deposition", in English, or CVD.
  • spin coating a resin by spin coating
  • chemical vapor deposition technique better known under the name “Chemical vapor deposition”, in English, or CVD.
  • the sacrificial layer 7 has a protrusion at the level of the transmission line 3 and the layer
  • the membrane 1 is then deposited on the sacrificial layer 7, it follows the topology of the sacrificial layer 7.
  • the order of magnitude of the deformation is substantially equal to the thickness of the transmission line 3.
  • the dimensions of the membrane 1 are of the order of 100 microns in the transverse direction d Trans and 300 microns in the longitudinal direction d Long , with an air gap of a few microns and a thickness of the order of the micron. These dimensions make it possible to compensate for the deformation, due to the topology during manufacture which has no influence on the operation of the MEMS component.
  • the topology of the membrane 1 affects the operation of the miniMEMS component rendering it unusable.
  • the literature proposes a first solution applied to the MEMS components making it possible to produce a substantially flat membrane. It consists in depositing a succession of thick layers of resins constituting the sacrificial layer 7. A succession of thermal anneals and dry etchings is then applied in order to improve the flatness of the sacrificial layer before the manufacture of the membranes.
  • An object of the invention is to develop a miniMEMS component for which the manufacturing method allows a simple and reproducible implementation on a large scale.
  • a capacitive micro electromechanical system (MEMS) electrostatic actuator comprising a stack comprising a substrate, a radio frequency transmission line in a longitudinal direction, a dielectric layer, said system further comprising two pillars arranged on the stack and supporting a metal membrane, the stack having a substantially planar upper surface.
  • MEMS micro electromechanical system
  • a stack having a substantially flat surface makes it possible in a single step to deposit a sacrificial layer of substantially flat surface.
  • this technology is not limited to the miniMEMS component, it is usable for a conventional MEMS component.
  • the substrate comprises a housing in which the transmission line is disposed.
  • the stack further comprises a passivation layer located between the substrate and the dielectric layer and comprising a housing inside which the radiofrequency transmission line is arranged.
  • a passivation layer located between the substrate and the dielectric layer and comprising a housing inside which the radiofrequency transmission line is arranged.
  • the height of the pillars is between 100 nm and 500 nm
  • a transverse dimension of the membrane in a direction perpendicular to the longitudinal direction is between 10 and 50 microns
  • a longitudinal dimension of the membrane in the longitudinal direction is between 20 and 100 microns
  • the thickness of the membrane is between 100 nm and 500 nm.
  • the MEMS proposed according to the invention is particularly recommended for the development of miniMEMS for which the reduced dimensions of the height of the pillars in particular cause many malfunctions when they are performed according to the embodiments proposed in the state of the art.
  • a method for producing an electrostatic electrostatic capacitive RF electromechanical system comprising a stack comprising a substrate, a radiofrequency transmission line in a longitudinal direction, a dielectric layer and two pillars arranged on the first stack supporting a metal membrane, the surface of the stack being flat.
  • the method notably comprises a step of integrating the radio frequency transmission line into the substrate or into the passivation layer.
  • the figure 3 represents a miniMEMS component according to the invention, it comprises a stack 8 comprising a substrate 4, a transmission line 3, a dielectric layer 5, and two pillars 2a; 2b positioned on the stack 8 and supporting a membrane 1.
  • the substrate 4 comprises a housing 9 in which the transmission line 3 is arranged, the transmission line 3 extending in a longitudinal direction parallel to the propagation direction of the Sig signal.
  • the substrate 4 comprises silicon and comprises a passivation layer comprising SiO 2 but may equally well be ceramic, sapphire or any other conventionally used material.
  • the dimensions of the housing 9 are adapted to receive the transmission line 3 to prevent the formation of a space between the side walls of the housing 9 and the transmission line 3, or to avoid the presence of beads around the transmission line 3.
  • the transmission line 3 is buried inside the substrate 4, the assembly comprising the substrate 4 and the transmission line 3 having a substantially flat surface.
  • the transmission line 3 comprises a highly conductive metal, usually gold.
  • a first transverse dimension d1 of the membrane 1 in the direction perpendicular to the longitudinal direction d Long is between 10 and 50 microns.
  • a second longitudinal dimension d2 of the membrane 1 in the longitudinal direction d Long is between 20 and 100 microns.
  • the thickness of the membrane 1 is between 100 and 500 nm.
  • the transverse dimension of the transmission line 3 is slightly smaller than the transverse dimension d1 of the membrane 1. Furthermore, the thickness of the transmission line 3 is a parameter making it possible to limit the ohmic losses.
  • the thickness of the transmission line depends, in particular, on the material used to make the transmission line 3 and the radiofrequency signal propagated inside the transmission line 3. In general, the lower the signal propagation frequency, the lower the frequency of propagation of the signal. the longer the transmission line is thick.
  • the thickness is generally between 500 nm and 1 micron under the membrane.
  • the stack 8 may further comprise a passivation layer 10, disposed on the surface of the substrate 4, and comprising a housing 9 in which the transmission line 3 is arranged.
  • the passivation layer 10 comprises a material low loss dielectric and low relative permittivity such as Si 3 N 4 or SiO 2 .
  • the thickness of the passivation layer 10 is equal to the thickness of the transmission line 3 to allow burial of the transmission line 3.
  • This variant is particularly advantageous when a housing 9 can not be formed directly in the substrate 4.
  • the passivation layer 10 then allows to bury the transmission line 3 so that the surface of the first stack 8 is substantially flat.
  • a dielectric layer 5 is disposed on the surface of the stack 8 and covering only the transmission line 3, or alternatively the entire surface of the stack 8.
  • the dielectric layer 5 comprises Sl 3 N 4 , SiO 2 or any other metal oxide.
  • the thickness of the layer is generally between 50 and 200 nm.
  • Pillars 2a; 2b are arranged on the surface of the stack so as to support the metal membrane 1. Pillars are columnar structures that can support a load. Advantageously the pillars 2a; 2b comprise a highly conductive metal generally gold.
  • the membrane 1 has a thickness of between 100 and 500 nm.
  • a space between the flat surface of the stack 8 and the membrane 1 defines the gap.
  • the gap is between 300 and 500 nm. This small gap value allows a fast switching of the miniMEMS component, the distance to travel through the membrane 1 being low. The switching speed is also improved by decreasing the dimensions of the membranes which increases their stiffness and therefore their resonance frequencies.
  • FIGS. 4a to 4f represent different steps of the process of developing a miniMEMS component according to one aspect of the invention.
  • the figure 4a represents the first step of elaboration of the miniMEMS component comprising two sub-steps: a first substep consisting of the deposition of the passivation layer 10 on the surface of the substrate 4 by a CVD technique for example and a second substep of forming the housing 9 by an engraving method.
  • the figure 4b represents the second development step consisting of the deposition of the transmission line 3 inside the housing 9 of the passivation layer 10. This step is performed by an evaporation-type metal deposition method.
  • the figure 4c represents the third development step of depositing the dielectric layer 6 followed by the deposition of a metal layer called the common electrode 11.
  • the common electrode 11 is deposited on the surface of the stack 8 with the exception of the surface located substantially above the transmission line 3.
  • the common layer 11 is gold or copper.
  • the figure 4d represents the fourth step of deposition of the sacrificial layer 7 made by centrifugal coating of a photosensitive resin or a dielectric type material deposited by a CVD technique.
  • the sacrificial layer 7 is then etched at the level of the areas on which the pillars 2a; 2b must grow.
  • the figure 4e represents the fifth stage of development of pillars 2a; 2b, this step is carried out by electrolytic growth from the common layer 11.
  • the figure 4f represents the sixth step of eliminating the sacrificial layer 7 and eliminating the excess of the common layer 11 that has not been used for producing the pillars 2a; 2b.
  • the miniMEMS component thus produced comprises the substantially planar surface stack 8 comprising the substrate 4, a passivation layer 10 comprising a housing 9 in which the transmission line 3 is arranged, and a dielectric layer 5.
  • the two pillars 2a; 2b located on the stack 8 support the membrane 1.
  • the Figures 5a and 5b are an example of using the miniMEMS components.
  • the figure 5a represents a substrate 4 on which is deposited a transmission line 3 in which the Sig signal propagates. On both sides of the transmission line 3, conductive lines 5a; 5b are connected to ground.
  • the miniMEMS according to the invention are arranged in matrix form.
  • the transmission line 3 is subdivided into four secondary transmission lines 3a, 3b, 3c, 3d.
  • miniMEMS components are arranged in series on each subdivision of the transmission line.
  • the attenuation obtained on one of the secondary transmission lines 3a, 3b, 3c, 3d corresponds to the cumulative influence of the set of miniMEMS of the matrix.
  • the switching time is also reduced by a factor of about 10.

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  • Micromachines (AREA)
EP13198695.2A 2012-12-21 2013-12-20 Kapazitive Mems-Komponente mit Erdübertragungslinie Active EP2747190B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1203561A FR3000049B1 (fr) 2012-12-21 2012-12-21 Composant mems capacitif a ligne de transmission enterree

Publications (2)

Publication Number Publication Date
EP2747190A1 true EP2747190A1 (de) 2014-06-25
EP2747190B1 EP2747190B1 (de) 2020-10-07

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ID=48521021

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EP13198695.2A Active EP2747190B1 (de) 2012-12-21 2013-12-20 Kapazitive Mems-Komponente mit Erdübertragungslinie

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EP (1) EP2747190B1 (de)
FR (1) FR3000049B1 (de)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709911A2 (de) * 1994-10-31 1996-05-01 Texas Instruments Incorporated Verbesserte Schalter
US20100141362A1 (en) * 2008-12-04 2010-06-10 Industrial Technology Research Institute Multi-actuation mems switch
WO2010065517A1 (en) * 2008-12-01 2010-06-10 The Trustees Of Columbia University In The City Of New York Electromechanical devices and methods for fabrication of the same
WO2010138929A1 (en) * 2009-05-28 2010-12-02 Qualcomm Incorporated Mems varactors
EP2506282A1 (de) * 2011-03-28 2012-10-03 Delfmems RF-MEMS-Kreuzpunktschalter und Kreuzpunktschaltermatrix mit RF-MEMS-Kreuzpunktschaltern

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709911A2 (de) * 1994-10-31 1996-05-01 Texas Instruments Incorporated Verbesserte Schalter
WO2010065517A1 (en) * 2008-12-01 2010-06-10 The Trustees Of Columbia University In The City Of New York Electromechanical devices and methods for fabrication of the same
US20100141362A1 (en) * 2008-12-04 2010-06-10 Industrial Technology Research Institute Multi-actuation mems switch
WO2010138929A1 (en) * 2009-05-28 2010-12-02 Qualcomm Incorporated Mems varactors
EP2506282A1 (de) * 2011-03-28 2012-10-03 Delfmems RF-MEMS-Kreuzpunktschalter und Kreuzpunktschaltermatrix mit RF-MEMS-Kreuzpunktschaltern

Also Published As

Publication number Publication date
FR3000049A1 (fr) 2014-06-27
FR3000049B1 (fr) 2016-01-15
EP2747190B1 (de) 2020-10-07

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