EP2747190B1 - Kapazitive Mems-Komponente mit Erdübertragungslinie - Google Patents

Kapazitive Mems-Komponente mit Erdübertragungslinie Download PDF

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Publication number
EP2747190B1
EP2747190B1 EP13198695.2A EP13198695A EP2747190B1 EP 2747190 B1 EP2747190 B1 EP 2747190B1 EP 13198695 A EP13198695 A EP 13198695A EP 2747190 B1 EP2747190 B1 EP 2747190B1
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Prior art keywords
transmission line
pillars
membrane
stack
layer
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EP13198695.2A
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English (en)
French (fr)
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EP2747190A1 (de
Inventor
Paolo MARTINS
Shailendra Bansropun
Matthieu Le Bailiff
Afshin Ziaei
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Thales SA
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Thales SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127—Strip line switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • micro-switches also called “switches” made in MEMS technology, the acronym MEMS meaning “Micro Electro Mechanical System”, in English, and meaning electromechanical micro-system.
  • the privileged field of application relates to radiofrequency systems and more precisely to applications in the field of radars, in particular using frequencies between 8 and 12 GHz.
  • the MEMS components proposed can however find applications in very high frequency fields of the order of 150 GHz.
  • MEMS components By means of a control electrode, an electrostatic force is exerted on a mechanical object of very small dimensions arranged in the vicinity of a radiofrequency transmission line. The displacement or the deformation of the object subjected to this force varies an electronic parameter which is most often a resistance or a capacitance. This variation interrupts or restores the transmission of radio frequencies in the transmission line.
  • a capacitive type switch devices with a “bridge” or with a suspended membrane are preferably used.
  • a thin metal membrane or beam 1 of the order of 1 ⁇ m, is held suspended by pillars 2a, 2b above a radiofrequency transmission line 3 made on the surface of a substrate 4 in which a Sig signal is propagated.
  • a dielectric layer 5 is deposited on the surface of the transmission line 3.
  • Conductive lines 6a, 6b are connected to the transmission line 3 and connected to ground M.
  • the membrane 1 can be subjected to an electric voltage by means of a control electrode. In the absence of applied voltage, the membrane 1 is suspended above the transmission line 3 at a certain height or a certain first “gap” which can be assimilated to a first capacitor, typically the height is greater than 1 micron. When a sufficiently high voltage is applied to the control electrode, the membrane 1 is subjected to an electrostatic force which deforms it. The membrane 1 is then separated from the transmission line 3 by a dielectric layer forming a second capacitor which is much greater than the first formed by the air gap. Therefore, the radio frequencies are shorted to ground M.
  • this capacitance can be used to produce a micro-switch.
  • MEMS components as described above require a voltage generally greater than 10V to enable switching, and a switching time of a few microseconds.
  • the documents WO2010 / 138929 , EP2506282 , WO2010 / 065517 and US2010 / 141362 describe MEMS components of reduced dimensions.
  • miniMEMS MEMS components of reduced dimensions compared to conventional MEMS components.
  • miniMEMS MEMS components of small dimensions. More precisely, by miniMEMS component A MEMS component in which the dimensions are reduced by a factor of approximately 10.
  • the figure 2 shows a sectional view of a miniMEMS component produced according to a conventional technology proposed in the literature.
  • the miniMEMS component comprises a stack comprising a substrate 4, a transmission line 3, a layer of dielectric material 5 covering the transmission line 3, pillars 2a; 2b supporting a membrane 1.
  • the membrane 1 has a non-planar topology. This topology is the consequence of the process used to develop the miniMEMS component.
  • the conventional method of making a miniMEMS component comprises five main steps.
  • the first step consists in depositing the transmission line 3 in a longitudinal direction d Long on the substrate 4, the longitudinal direction d Long being parallel to the direction of propagation of the radiofrequencies inside the transmission line 3.
  • the second step consists in the deposition of the dielectric layer 5.
  • the third step consists in the deposition of a sacrificial layer 7.
  • the fourth step consists in the production of the pillars 2a; 2b and the fifth step of depositing the membrane 1.
  • the sacrificial layer 7 is removed.
  • the third step of producing the sacrificial layer 7 is carried out by applying a resin by centrifugal coating better known under the name of "spin coating” in English, or by a chemical vapor deposition technique better known under the name “Chemical vapor deposition", in English, or CVD.
  • a resin by centrifugal coating better known under the name of "spin coating” in English, or by a chemical vapor deposition technique better known under the name “Chemical vapor deposition”, in English, or CVD.
  • a resin by centrifugal coating better known under the name of "spin coating” in English, or by a chemical vapor deposition technique better known under the name “Chemical vapor deposition”, in English, or CVD.
  • the dimensions of the membrane 1 are of the order of 100 microns according to the transverse direction d Trans and 300 microns according to the longitudinal direction d Long , with an air gap of a few microns and a thickness of the order of a micron. These dimensions make it possible to compensate for the deformation, due to the topology during manufacture, which has no influence on the operation of the MEMS component.
  • the topology of the membrane 1 affects the operation of the miniMEMS component making it unusable.
  • the literature proposes a first solution applied to MEMS components making it possible to produce a substantially planar membrane. It consists in depositing a succession of thick layers of resins constituting the sacrificial layer 7. A succession of thermal annealing and dry etching is then applied in order to improve the flatness of the sacrificial layer before manufacturing the membranes.
  • This process is complex and very difficult to apply on a large scale for a limited result.
  • this process is not compatible for the development of miniMEMS
  • An aim of the invention is to develop a miniMEMS component for which the manufacturing process allows simple and reproducible implementation on a large scale.
  • MEMS micro electromechanical system
  • a stack having a substantially flat surface makes it possible in a single step to deposit a sacrificial layer with a substantially flat surface.
  • this technology is not limited to the miniMEMS component, it can be used for a conventional MEMS component.
  • the height of the pillars is between 100 nm and 500 nm
  • a transverse dimension of the membrane in a direction perpendicular to the longitudinal direction is between 10 and 50 microns
  • a longitudinal dimension of the membrane in the longitudinal direction is between 20 and 100 microns
  • the thickness of the membrane is between 100 nm and 500 nm.
  • the MEMS proposed according to the invention is particularly recommended for the preparation of miniMEMS for which the reduced dimensions of the height of the pillars in particular generate numerous malfunctions when they are produced according to the embodiments proposed in the state of the art.
  • the figure 3 represents a miniMEMS component it comprises a stack 8 comprising a substrate 4, a transmission line 3, a dielectric layer 5, and two pillars 2a; 2b positioned on the stack 8 and supporting a membrane 1.
  • the substrate 4 comprises a housing 9 in which the transmission line 3 is arranged, the transmission line 3 extending in a longitudinal direction parallel to the direction of propagation of the signal Sig.
  • the substrate 4 comprises silicon and comprises a passivation layer comprising SiO 2 but can just as easily be made of ceramic, sapphire or any other material conventionally used.
  • the dimensions of the housing 9 are adapted to receive the transmission line 3 making it possible to avoid the formation of a space between the side walls of the housing 9 and the transmission line 3, or, to avoid the presence of beads around the transmission line 3.
  • the transmission line 3 is buried inside the substrate 4, the assembly comprising the substrate 4 and the transmission line 3 having a substantially planar surface.
  • the transmission line 3 comprises a highly conductive metal, generally gold.
  • a first transverse dimension d1 of the membrane 1 in the direction perpendicular to the longitudinal direction d Long measures between 10 and 50 microns.
  • a second longitudinal dimension d2 of the membrane 1 along the longitudinal direction d Long measures between 20 and 100 microns.
  • the thickness of the membrane 1 is between 100 and 500 nm.
  • the transverse dimension of the transmission line 3 is slightly less than the transverse dimension d1 of the membrane 1. Furthermore, the thickness of the transmission line 3 is a parameter making it possible to limit the ohmic losses.
  • the thickness of the transmission line depends in particular on the material used to make the transmission line 3 and on the radiofrequency signal propagated inside the transmission line 3. In general, the lower the signal propagation frequency and the thicker the transmission line. The thickness is generally between 500 nm and 1 micron below the membrane.
  • the stack 8 may further comprise a passivation layer 10, arranged on the surface of the substrate 4, and comprising a housing 9 in which the transmission line 3 is arranged.
  • the passivation layer 10 comprises a material. low loss dielectric with low relative permittivity such as Si 3 N 4 or SiO 2 .
  • the thickness of the passivation layer 10 is equal to the thickness of the transmission line 3 to allow the burial of the transmission line 3.
  • This variant is advantageous in particular when a housing 9 cannot be formed directly in the substrate 4.
  • the passivation layer 10 then allows the transmission line 3 to be buried so that the surface of the first stack 8 is substantially flat.
  • a dielectric layer 5 is placed on the surface of the stack 8 and covering only the transmission line 3, or, alternatively the entire surface of the stack 8.
  • the dielectric layer 5 comprises Si 3 N 4 , SiO 2 or any other metal oxide.
  • the thickness of the layer is generally between 50 and 200 nm.
  • pillars 2a; 2b are arranged on the surface of the stack so as to support the metallic membrane 1.
  • pillars is meant column-shaped structures capable of supporting a load.
  • the pillars 2a; 2b comprise a highly conductive metal generally gold.
  • the membrane 1 has a thickness between 100 and 500 nm.
  • a space between the flat surface of the stack 8 and the membrane 1 defines the gap.
  • the gap is between 300 and 500 nm. This low gap value allows rapid switching of the miniMEMS component, the distance to be traveled by the membrane 1 being small. The switching speed is also improved by reducing the dimensions of the membranes which increases their stiffness and therefore their resonance frequencies.
  • the figures 4a to 4f represent different steps of the process for developing a miniMEMS component according to one aspect of the invention.
  • the figure 4a represents the first step in the preparation of the miniMEMS component comprising two sub-steps: a first sub-step consisting in depositing the passivation layer 10 on the surface of the substrate 4 by a CVD technique for example and a second sub-step consisting in the formation of the housing 9 by an etching method.
  • the figure 4b shows the second development step consisting in depositing the transmission line 3 inside the housing 9 of the passivation layer 10. This step is carried out by a metal deposition method of the evaporation type.
  • the figure 4c shows the third development step consisting in depositing the dielectric layer 6 followed by the deposition of a metal layer called the common electrode 11.
  • the common electrode 11 is deposited on the surface of the stack 8 with the exception of the surface located substantially above the transmission line 3.
  • the common layer 11 is gold or copper.
  • the figure 4d represents the fourth step of depositing the sacrificial layer 7 carried out by centrifugal coating with a photosensitive resin or a dielectric type material deposited by a CVD technique.
  • the sacrificial layer 7 is then etched at the level of the areas on which the pillars 2a; 2b must grow.
  • the figure 4e represents the fifth stage in the development of pillars 2a; 2b, this step is carried out by electrolytic growth from the common layer 11.
  • the figure 4f shows the sixth step of eliminating the sacrificial layer 7 and eliminating the excess of the common layer 11 which has not been used for the production of the pillars 2a; 2b.
  • the miniMEMS component thus produced comprises the stack 8 with a substantially planar surface comprising the substrate 4, a passivation layer 10 comprising a housing 9 in which the transmission line 3 is arranged, and a dielectric layer 5.
  • the two pillars 2a; 2b located on stack 8 support membrane 1.
  • the figures 5a and 5b show an example of how to use miniMEMS components.
  • the figure 5a represents a substrate 4 on which is deposited a transmission line 3 in which the signal Sig propagates. On either side of the transmission line 3, conductive lines 5a; 5b are connected to ground.
  • the miniMEMS according to the invention are arranged in matrix form.
  • the transmission line 3 is subdivided into four secondary transmission lines 3a, 3b, 3c, 3d.
  • miniMEMS components are arranged in series on each subdivision of the transmission line.
  • the attenuation obtained on one of the secondary transmission lines 3a, 3b, 3c, 3d corresponds to the cumulative influence of all the miniMEMS of the matrix.
  • the switching time is also reduced by a factor of about 10.

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  • Micromachines (AREA)

Claims (5)

  1. Kapazitives mikroelektromechanisches System (MEMS) mit elektrostatischem Betätigungselement, Folgendes beinhaltend:
    - einen Stapel (8), beinhaltend ein Substrat (4), eine Funkfrequenz-Übertragungsleitung (3) entlang einer Längsrichtung (dLong), eine dielektrische Schicht (6), eine Passivierungsschicht (10), befindlich zwischen dem Substrat (4) und der dielektrischen Schicht (6), beinhaltend ein Gehäuse (9), in welchem die Funkfrequenz-Übertragungsleitung (3) angeordnet ist, wobei die Oberfläche des Stapels (8) eben ist,
    - eine gemeinsame Elektrode (11), welche mit der Masse verbunden und an der Oberfläche des Stapels (8) auf der dielektrischen Schicht angeordnet ist, und außerhalb der Oberfläche, welche im Wesentlichen oberhalb der Übertragungsleitung (3) angeordnet ist,
    - eine Metallmembran (1) und zwei Pfeiler (2a; 2b), wobei die beiden Pfeiler auf der gemeinsamen Elektrode (11) angeordnet sind und die Metallmembran (1) stützen, wobei die Höhe der Pfeiler (2a; 2b) zwischen 100 nm und 500 nm beträgt.
  2. System nach einem der vorhergehenden Ansprüche, wobei eine Querabmessung (d1) der Membran (1) in einer Richtung rechtwinklig zur Längsrichtung (dLong) zwischen 10 und 50 Mikrometern beträgt.
  3. System nach einem der vorhergehenden Ansprüche, wobei eine Längsabmessung (d2) der Membran (1) entlang der Längsrichtung (dLong) zwischen 20 und 100 Mikrometern beträgt.
  4. System nach einem der vorhergehenden Ansprüche, wobei die Dicke der Membran (1) zwischen 100 nm und 500 nm beträgt.
  5. Herstellungsverfahren eines kapazitiven mikroelektromechanischen Systems (MEMS) mit elektrostatischem Betätigungselement, Folgendes beinhaltend:
    - einen Stapel (8), beinhaltend ein Substrat (4), eine Funkfrequenz-Übertragungsleitung (3) entlang einer Längsrichtung (dLong) und eine dielektrische Schicht (6), wobei die Oberfläche des Stapels (8) eben ist,
    - eine Metallmembran und zwei Pfeiler (2a; 2b), welche die Metallmembran (1) stützen, wobei die Höhe der Pfeiler (2a; 2b) zwischen 100 nm und 500 nm beträgt,
    wobei das Verfahren Folgendes beinhaltet:
    - einen ersten Schritt der Herstellung des Systems, beinhaltend zwei Teilschritte:
    - einen ersten Teilschritt des Ablagerns einer Passivierungsschicht (10) an der Oberfläche des Substrates (4),
    - einen zweiten Teilschritt des Bildens eines Gehäuses (9) durch Gravur,
    - einen zweiten Schritt des Ablagerns der Übertragungsleitung (3) im Innern des Gehäuses (9) der Passivierungsschicht (10),
    - einen dritten Schritt des Ablagerns der dielektrischen Schicht (6), gefolgert vom Ablagern einer Metallschicht, genannt gemeinsame Elektrode (11), wobei die gemeinsame Elektrode an der Oberfläche des Stapels auf der dielektrischen Schicht und außerhalb derjenigen Oberfläche angeordnet ist, welche sich im Wesentlichen oberhalb der Übertragungsleitung (3) befindet,
    - einen vierten Schritt des Ablagerns einer Opferschicht (7), wobei die Opferschicht anschließend auf Bereiche graviert wird, an welchen die Pfeiler wachsen sollen,
    - einen fünften Schritt der Herstellung der Pfeiler (2a, 2b) durch elektrolytisches Wachstum ab der gemeinsamen Elektrode (11),
    - einen sechsten Schritt des Ablagerns der Metallmembran (1) auf der Opferschicht, und der Beseitigung der Opferschicht (7) und des Überschusses der gemeinsamen Elektrode (11), welche nicht zur Schaffung der Pfeiler genutzt wurde.
EP13198695.2A 2012-12-21 2013-12-20 Kapazitive Mems-Komponente mit Erdübertragungslinie Active EP2747190B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1203561A FR3000049B1 (fr) 2012-12-21 2012-12-21 Composant mems capacitif a ligne de transmission enterree

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EP2747190B1 true EP2747190B1 (de) 2020-10-07

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5619061A (en) * 1993-07-27 1997-04-08 Texas Instruments Incorporated Micromechanical microwave switching
WO2010065517A1 (en) * 2008-12-01 2010-06-10 The Trustees Of Columbia University In The City Of New York Electromechanical devices and methods for fabrication of the same
US7978045B2 (en) * 2008-12-04 2011-07-12 Industrial Technology Research Institute Multi-actuation MEMS switch
US8363380B2 (en) * 2009-05-28 2013-01-29 Qualcomm Incorporated MEMS varactors
EP2506282B1 (de) * 2011-03-28 2013-09-11 Delfmems RF-MEMS-Kreuzpunktschalter und Kreuzpunktschaltermatrix mit RF-MEMS-Kreuzpunktschaltern

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
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EP2747190A1 (de) 2014-06-25
FR3000049A1 (fr) 2014-06-27
FR3000049B1 (fr) 2016-01-15

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