EP2747190A1 - Capacitive MEMS component with buried transmission line - Google Patents

Capacitive MEMS component with buried transmission line Download PDF

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Publication number
EP2747190A1
EP2747190A1 EP13198695.2A EP13198695A EP2747190A1 EP 2747190 A1 EP2747190 A1 EP 2747190A1 EP 13198695 A EP13198695 A EP 13198695A EP 2747190 A1 EP2747190 A1 EP 2747190A1
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Prior art keywords
transmission line
stack
membrane
substrate
pillars
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EP13198695.2A
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German (de)
French (fr)
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EP2747190B1 (en
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Paolo MARTINS
Shailendra Bansropun
Matthieu Le Bailiff
Afshin Ziaei
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Thales SA
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Thales SA
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/12Auxiliary devices for switching or interrupting by mechanical chopper
    • H01P1/127Strip line switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00Electrostatic relays; Electro-adhesion relays
    • H01H59/0009Electrostatic relays; Electro-adhesion relays making use of micromechanics

Definitions

  • micro-switches also called “switches” made in MEMS technology
  • MEMS Micro Electro Mechanical System
  • micro-electromechanical system micro-electromechanical system
  • the preferred field of application concerns radio frequency systems and more specifically applications in the field of radars including using frequencies between 8 and 12 GHz.
  • the proposed MEMS components can, however, find applications in very high frequency domains of the order of 150 GHz.
  • the operating principle of the MEMS components is as follows.
  • a control electrode By means of a control electrode, an electrostatic force is exerted on a mechanical object of very small dimensions arranged in the vicinity of a radio frequency transmission line.
  • the displacement or deformation of the object subjected to this force varies an electronic parameter which is most often a resistance or a capacity. This variation interrupts or restores the transmission of radio frequencies in the transmission line.
  • a capacitive-type switch it is preferable to use "bridge" or suspended-membrane devices.
  • FIG. Figures 1a and 1b respectively represent a state in which the signal passes and a state in which the signal is short-circuited.
  • a membrane or a metal beam 1 of small thickness, of the order of 1 micron, is held suspended by pillars 2a, 2b above a radiofrequency transmission line 3 made on the surface of a substrate 4 in which a Sig signal is propagated.
  • a dielectric layer 5 is deposited on the surface of the transmission line 3.
  • Conductive lines 6a, 6b are connected to the transmission line 3 and connected to the ground M.
  • the membrane 1 may be subjected to an electrical voltage by means of a control electrode. In the absence of applied voltage, the membrane 1 is suspended above the transmission line 3 at a certain height or a certain "gap" that can be likened to a first capacitance, typically the height is greater than 1 micron. When a sufficiently high voltage is applied to the control electrode, the membrane 1 is subjected to an electrostatic force which deforms it. The membrane 1 is then separated from the transmission line 3 by a dielectric layer forming a second capacitance which is much greater than the first formed by the air gap. As a result, radio frequencies are short-circuited to ground M.
  • the variation of this capacity can be used to make a microswitch.
  • the MEMS components as described above require a voltage generally greater than 10V to allow switching, and a switching time of a few microseconds.
  • miniMEMS component a MEMS component in which the dimensions are reduced by a factor of about 10.
  • the figure 2 represents a section view of a miniMEMS component produced according to a conventional technology proposed in the literature.
  • the miniMEMS component comprises a stack comprising a substrate 4, a transmission line 3, a layer of dielectric material 5 covering the transmission line 3, pillars 2a; 2b supporting a membrane 1.
  • the membrane 1 has a non-planar topology. This topology is the consequence of the process used for the development of the miniMEMS component.
  • the conventional method of developing a miniMEMS component comprises five main steps.
  • the first step consists of the deposition of the transmission line 3 in a longitudinal direction d Long on the substrate 4, the Long longitudinal direction being parallel to the direction of propagation of the radio frequencies inside the transmission line 3.
  • the second step consists in the deposition of the dielectric layer 5.
  • the third step consists in the deposition of a sacrificial layer 7.
  • the fourth step consists in the realization of the pillars 2a; 2b and the fifth membrane deposition step 1. At the end of miniMEMS component development process, the sacrificial layer 7 is eliminated.
  • the third step of producing the sacrificial layer 7 is carried out by applying a resin by spin coating known as "spin coating” in the English language, or by a chemical vapor deposition technique better known under the name “Chemical vapor deposition", in English, or CVD.
  • spin coating a resin by spin coating
  • chemical vapor deposition technique better known under the name “Chemical vapor deposition”, in English, or CVD.
  • the sacrificial layer 7 has a protrusion at the level of the transmission line 3 and the layer
  • the membrane 1 is then deposited on the sacrificial layer 7, it follows the topology of the sacrificial layer 7.
  • the order of magnitude of the deformation is substantially equal to the thickness of the transmission line 3.
  • the dimensions of the membrane 1 are of the order of 100 microns in the transverse direction d Trans and 300 microns in the longitudinal direction d Long , with an air gap of a few microns and a thickness of the order of the micron. These dimensions make it possible to compensate for the deformation, due to the topology during manufacture which has no influence on the operation of the MEMS component.
  • the topology of the membrane 1 affects the operation of the miniMEMS component rendering it unusable.
  • the literature proposes a first solution applied to the MEMS components making it possible to produce a substantially flat membrane. It consists in depositing a succession of thick layers of resins constituting the sacrificial layer 7. A succession of thermal anneals and dry etchings is then applied in order to improve the flatness of the sacrificial layer before the manufacture of the membranes.
  • An object of the invention is to develop a miniMEMS component for which the manufacturing method allows a simple and reproducible implementation on a large scale.
  • a capacitive micro electromechanical system (MEMS) electrostatic actuator comprising a stack comprising a substrate, a radio frequency transmission line in a longitudinal direction, a dielectric layer, said system further comprising two pillars arranged on the stack and supporting a metal membrane, the stack having a substantially planar upper surface.
  • MEMS micro electromechanical system
  • a stack having a substantially flat surface makes it possible in a single step to deposit a sacrificial layer of substantially flat surface.
  • this technology is not limited to the miniMEMS component, it is usable for a conventional MEMS component.
  • the substrate comprises a housing in which the transmission line is disposed.
  • the stack further comprises a passivation layer located between the substrate and the dielectric layer and comprising a housing inside which the radiofrequency transmission line is arranged.
  • a passivation layer located between the substrate and the dielectric layer and comprising a housing inside which the radiofrequency transmission line is arranged.
  • the height of the pillars is between 100 nm and 500 nm
  • a transverse dimension of the membrane in a direction perpendicular to the longitudinal direction is between 10 and 50 microns
  • a longitudinal dimension of the membrane in the longitudinal direction is between 20 and 100 microns
  • the thickness of the membrane is between 100 nm and 500 nm.
  • the MEMS proposed according to the invention is particularly recommended for the development of miniMEMS for which the reduced dimensions of the height of the pillars in particular cause many malfunctions when they are performed according to the embodiments proposed in the state of the art.
  • a method for producing an electrostatic electrostatic capacitive RF electromechanical system comprising a stack comprising a substrate, a radiofrequency transmission line in a longitudinal direction, a dielectric layer and two pillars arranged on the first stack supporting a metal membrane, the surface of the stack being flat.
  • the method notably comprises a step of integrating the radio frequency transmission line into the substrate or into the passivation layer.
  • the figure 3 represents a miniMEMS component according to the invention, it comprises a stack 8 comprising a substrate 4, a transmission line 3, a dielectric layer 5, and two pillars 2a; 2b positioned on the stack 8 and supporting a membrane 1.
  • the substrate 4 comprises a housing 9 in which the transmission line 3 is arranged, the transmission line 3 extending in a longitudinal direction parallel to the propagation direction of the Sig signal.
  • the substrate 4 comprises silicon and comprises a passivation layer comprising SiO 2 but may equally well be ceramic, sapphire or any other conventionally used material.
  • the dimensions of the housing 9 are adapted to receive the transmission line 3 to prevent the formation of a space between the side walls of the housing 9 and the transmission line 3, or to avoid the presence of beads around the transmission line 3.
  • the transmission line 3 is buried inside the substrate 4, the assembly comprising the substrate 4 and the transmission line 3 having a substantially flat surface.
  • the transmission line 3 comprises a highly conductive metal, usually gold.
  • a first transverse dimension d1 of the membrane 1 in the direction perpendicular to the longitudinal direction d Long is between 10 and 50 microns.
  • a second longitudinal dimension d2 of the membrane 1 in the longitudinal direction d Long is between 20 and 100 microns.
  • the thickness of the membrane 1 is between 100 and 500 nm.
  • the transverse dimension of the transmission line 3 is slightly smaller than the transverse dimension d1 of the membrane 1. Furthermore, the thickness of the transmission line 3 is a parameter making it possible to limit the ohmic losses.
  • the thickness of the transmission line depends, in particular, on the material used to make the transmission line 3 and the radiofrequency signal propagated inside the transmission line 3. In general, the lower the signal propagation frequency, the lower the frequency of propagation of the signal. the longer the transmission line is thick.
  • the thickness is generally between 500 nm and 1 micron under the membrane.
  • the stack 8 may further comprise a passivation layer 10, disposed on the surface of the substrate 4, and comprising a housing 9 in which the transmission line 3 is arranged.
  • the passivation layer 10 comprises a material low loss dielectric and low relative permittivity such as Si 3 N 4 or SiO 2 .
  • the thickness of the passivation layer 10 is equal to the thickness of the transmission line 3 to allow burial of the transmission line 3.
  • This variant is particularly advantageous when a housing 9 can not be formed directly in the substrate 4.
  • the passivation layer 10 then allows to bury the transmission line 3 so that the surface of the first stack 8 is substantially flat.
  • a dielectric layer 5 is disposed on the surface of the stack 8 and covering only the transmission line 3, or alternatively the entire surface of the stack 8.
  • the dielectric layer 5 comprises Sl 3 N 4 , SiO 2 or any other metal oxide.
  • the thickness of the layer is generally between 50 and 200 nm.
  • Pillars 2a; 2b are arranged on the surface of the stack so as to support the metal membrane 1. Pillars are columnar structures that can support a load. Advantageously the pillars 2a; 2b comprise a highly conductive metal generally gold.
  • the membrane 1 has a thickness of between 100 and 500 nm.
  • a space between the flat surface of the stack 8 and the membrane 1 defines the gap.
  • the gap is between 300 and 500 nm. This small gap value allows a fast switching of the miniMEMS component, the distance to travel through the membrane 1 being low. The switching speed is also improved by decreasing the dimensions of the membranes which increases their stiffness and therefore their resonance frequencies.
  • FIGS. 4a to 4f represent different steps of the process of developing a miniMEMS component according to one aspect of the invention.
  • the figure 4a represents the first step of elaboration of the miniMEMS component comprising two sub-steps: a first substep consisting of the deposition of the passivation layer 10 on the surface of the substrate 4 by a CVD technique for example and a second substep of forming the housing 9 by an engraving method.
  • the figure 4b represents the second development step consisting of the deposition of the transmission line 3 inside the housing 9 of the passivation layer 10. This step is performed by an evaporation-type metal deposition method.
  • the figure 4c represents the third development step of depositing the dielectric layer 6 followed by the deposition of a metal layer called the common electrode 11.
  • the common electrode 11 is deposited on the surface of the stack 8 with the exception of the surface located substantially above the transmission line 3.
  • the common layer 11 is gold or copper.
  • the figure 4d represents the fourth step of deposition of the sacrificial layer 7 made by centrifugal coating of a photosensitive resin or a dielectric type material deposited by a CVD technique.
  • the sacrificial layer 7 is then etched at the level of the areas on which the pillars 2a; 2b must grow.
  • the figure 4e represents the fifth stage of development of pillars 2a; 2b, this step is carried out by electrolytic growth from the common layer 11.
  • the figure 4f represents the sixth step of eliminating the sacrificial layer 7 and eliminating the excess of the common layer 11 that has not been used for producing the pillars 2a; 2b.
  • the miniMEMS component thus produced comprises the substantially planar surface stack 8 comprising the substrate 4, a passivation layer 10 comprising a housing 9 in which the transmission line 3 is arranged, and a dielectric layer 5.
  • the two pillars 2a; 2b located on the stack 8 support the membrane 1.
  • the Figures 5a and 5b are an example of using the miniMEMS components.
  • the figure 5a represents a substrate 4 on which is deposited a transmission line 3 in which the Sig signal propagates. On both sides of the transmission line 3, conductive lines 5a; 5b are connected to ground.
  • the miniMEMS according to the invention are arranged in matrix form.
  • the transmission line 3 is subdivided into four secondary transmission lines 3a, 3b, 3c, 3d.
  • miniMEMS components are arranged in series on each subdivision of the transmission line.
  • the attenuation obtained on one of the secondary transmission lines 3a, 3b, 3c, 3d corresponds to the cumulative influence of the set of miniMEMS of the matrix.
  • the switching time is also reduced by a factor of about 10.

Abstract

The system has an electrostatic actuator including a stack (8) having a substrate (4), a radio frequency transmission line (3) along a longitudinal direction, and a dielectric layer (5). Two pillars (2a, 2b) arranged on the stack supports a metal membrane (1), where the upper surface of the stack is planar. The substrate includes a housing (9) in which the transmission line is placed. A passivation layer is located between the substrate and the dielectric layer, where a transverse dimension of the membrane in a direction perpendicular to the longitudinal direction is between 10 and 50 microns. An independent claim is also included for a method for development of a capacitive microelectromechanical system.

Description

Le domaine de l'invention est celui des micro-interrupteurs encore dénommés « commutateurs » réalisés en technologie MEMS, l'acronyme MEMS signifiant « Micro Electro Mechanical System », en langue anglaise, et signifiant micro-système électromécanique.The field of the invention is that of micro-switches also called "switches" made in MEMS technology, the acronym MEMS meaning "Micro Electro Mechanical System", in English, and meaning micro-electromechanical system.

Le domaine privilégié d'application concerne les systèmes radiofréquences et plus précisément les applications dans le domaine des radars notamment utilisant des fréquences comprises entre 8 et 12 GHz. Les composants MEMS proposés peuvent toutefois trouver des applications dans des domaines de fréquences très élevées de l'ordre de 150 GHz.The preferred field of application concerns radio frequency systems and more specifically applications in the field of radars including using frequencies between 8 and 12 GHz. The proposed MEMS components can, however, find applications in very high frequency domains of the order of 150 GHz.

Le principe de fonctionnement des composants MEMS est le suivant. Au moyen d'une électrode de commande, on exerce une force électrostatique sur un objet mécanique de très faibles dimensions disposé au voisinage d'une ligne de transmission de radiofréquences. Le déplacement ou la déformation de l'objet soumis à cette force fait varier un paramètre électronique qui est le plus souvent une résistance ou une capacité. Cette variation interrompt ou rétablit la transmission des radiofréquences dans la ligne de transmission. Pour réaliser un interrupteur de type capacitif, on utilise préférentiellement des dispositifs à « pont » ou à membrane suspendue.The operating principle of the MEMS components is as follows. By means of a control electrode, an electrostatic force is exerted on a mechanical object of very small dimensions arranged in the vicinity of a radio frequency transmission line. The displacement or deformation of the object subjected to this force varies an electronic parameter which is most often a resistance or a capacity. This variation interrupts or restores the transmission of radio frequencies in the transmission line. To make a capacitive-type switch, it is preferable to use "bridge" or suspended-membrane devices.

Le principe de fonctionnement de ce type de dispositif est décrit dans le cas le plus simple de l'utilisation en micro-interrupteur, et est illustré en figures 1a et 1b qui représentent respectivement un état dans lequel le signal passe et un état dans lequel le signal est court-circuité.The operating principle of this type of device is described in the simplest case of micro-switch operation, and is illustrated in FIG. Figures 1a and 1b which respectively represent a state in which the signal passes and a state in which the signal is short-circuited.

Plus précisément, une membrane ou une poutre métallique 1 de faible épaisseur, de l'ordre de 1 µm, est maintenue suspendue par des piliers 2a, 2b au dessus d'une ligne de transmission de radiofréquences 3 réalisée à la surface d'un substrat 4 dans laquelle un signal Sig est propagé. Une couche diélectrique 5 est déposée sur la surface de la ligne de transmission 3. Des lignes conductrices 6a, 6b sont connectées à la ligne de transmission 3 et reliées à la masse M.More specifically, a membrane or a metal beam 1 of small thickness, of the order of 1 micron, is held suspended by pillars 2a, 2b above a radiofrequency transmission line 3 made on the surface of a substrate 4 in which a Sig signal is propagated. A dielectric layer 5 is deposited on the surface of the transmission line 3. Conductive lines 6a, 6b are connected to the transmission line 3 and connected to the ground M.

La membrane 1 peut être soumise à une tension électrique au moyen d'une électrode de commande. En l'absence de tension appliquée, la membrane 1 est suspendue au-dessus de la ligne de transmission 3 à une certaine hauteur ou un certain premier « gap » pouvant être assimilé à une première capacité, typiquement la hauteur est supérieure à 1 micron. Lorsque l'on applique une tension suffisamment élevée sur l'électrode de commande, la membrane 1 est soumise à une force électrostatique qui la déforme. La membrane 1 est alors séparée de la ligne de transmission 3 par une couche de diélectrique formant une deuxième capacité qui est très supérieure à la première formée par le gap d'air. Par conséquent, les radiofréquences sont court-circuitées vers la masse M.The membrane 1 may be subjected to an electrical voltage by means of a control electrode. In the absence of applied voltage, the membrane 1 is suspended above the transmission line 3 at a certain height or a certain "gap" that can be likened to a first capacitance, typically the height is greater than 1 micron. When a sufficiently high voltage is applied to the control electrode, the membrane 1 is subjected to an electrostatic force which deforms it. The membrane 1 is then separated from the transmission line 3 by a dielectric layer forming a second capacitance which is much greater than the first formed by the air gap. As a result, radio frequencies are short-circuited to ground M.

Selon le montage électronique, la variation de cette capacité peut être utilisée pour réaliser un micro-interrupteur.According to the electronic assembly, the variation of this capacity can be used to make a microswitch.

Les composants MEMS tels que décrit précédemment nécessitent une tension généralement supérieure à 10V pour permettre une commutation, et, un temps de commutation de quelques microsecondes.The MEMS components as described above require a voltage generally greater than 10V to allow switching, and a switching time of a few microseconds.

Pour améliorer les performances de ces dispositifs telle que la vitesse de commutation, il est connu d'utiliser des matrices comprenant des composants MEMS de dimensions réduites par rapport aux composants MEMS classiques. Nous appellerons par la suite ces composants MEMS de petites dimensions des « miniMEMS ». Plus précisément, on entend par composant miniMEMS un composant MEMS dans lequel les dimensions sont réduites d'un facteur d'environ 10.To improve the performance of these devices such as the switching speed, it is known to use matrices comprising MEMS components of reduced dimensions compared to conventional MEMS components. We will call these small MEMS components of "miniMEMS" later. More specifically, we mean by miniMEMS component a MEMS component in which the dimensions are reduced by a factor of about 10.

La figure 2 représente une vue de coupe d'un composant miniMEMS réalisé selon une technologie classique proposée dans la littérature.The figure 2 represents a section view of a miniMEMS component produced according to a conventional technology proposed in the literature.

Le composant miniMEMS comprend un empilement comprenant un substrat 4, une ligne de transmission 3, une couche de matériau diélectrique 5 recouvrant la ligne de transmission 3, des piliers 2a ; 2b supportant une membrane 1. La membrane 1 présente une topologie non plane. Cette topologie est la conséquence du procédé utilisé pour l'élaboration du composant miniMEMS.The miniMEMS component comprises a stack comprising a substrate 4, a transmission line 3, a layer of dielectric material 5 covering the transmission line 3, pillars 2a; 2b supporting a membrane 1. The membrane 1 has a non-planar topology. This topology is the consequence of the process used for the development of the miniMEMS component.

Typiquement, le procédé classique d'élaboration d'un composant miniMEMS comprend cinq étapes principales. La première étape consiste au dépôt de la ligne de transmission 3 selon une direction longitudinale dLong sur le substrat 4, la direction longitudinale dLong étant parallèle à la direction de propagation des radiofréquences à l'intérieur de la ligne de transmission 3. La deuxième étape consiste au dépôt de la couche diélectrique 5. La troisième étape consiste au dépôt d'une couche sacrificielle 7. La quatrième étape consiste à la réalisation des piliers 2a ; 2b et la cinquième étape de dépôt de la membrane 1. En fin de procédé d'élaboration du composant miniMEMS, la couche sacrificielle 7 est éliminée.Typically, the conventional method of developing a miniMEMS component comprises five main steps. The first step consists of the deposition of the transmission line 3 in a longitudinal direction d Long on the substrate 4, the Long longitudinal direction being parallel to the direction of propagation of the radio frequencies inside the transmission line 3. The second step consists in the deposition of the dielectric layer 5. The third step consists in the deposition of a sacrificial layer 7. The fourth step consists in the realization of the pillars 2a; 2b and the fifth membrane deposition step 1. At the end of miniMEMS component development process, the sacrificial layer 7 is eliminated.

La troisième étape de réalisation de la couche sacrificielle 7 est réalisée par application d'une résine par enduction centrifuge plus connu sous le nom de « spin coating » en langue anglaise, ou par une technique de dépôt chimique en phase vapeur plus connue sous le nom « chemical vapor deposition », en langue anglaise, ou CVD. Quelque soit la méthode utilisée pour réaliser le dépôt de la couche sacrificielle 7, celle-ci épouse le relief de la surface sur laquelle elle est déposée. Par conséquent, la couche sacrificielle 7 présente une protubérance au niveau de la ligne de transmission 3 et de la couche diélectrique 5. La membrane 1 est ensuite déposée sur la couche sacrificielle 7, elle épouse la topologie de la couche sacrificielle 7. L'ordre de grandeur de la déformation est sensiblement égal à l'épaisseur de la ligne de transmission 3.The third step of producing the sacrificial layer 7 is carried out by applying a resin by spin coating known as "spin coating" in the English language, or by a chemical vapor deposition technique better known under the name "Chemical vapor deposition", in English, or CVD. Whatever the method used to achieve the deposition of the sacrificial layer 7, it matches the relief of the surface on which it is deposited. Consequently, the sacrificial layer 7 has a protrusion at the level of the transmission line 3 and the layer The membrane 1 is then deposited on the sacrificial layer 7, it follows the topology of the sacrificial layer 7. The order of magnitude of the deformation is substantially equal to the thickness of the transmission line 3.

Dans le cas de composants MEMS classiques, les dimensions de la membrane 1 sont de l'ordre 100 microns selon la direction transverse dTrans et 300 microns selon la direction longitudinale dLong, avec un gap d'air de quelques microns et une épaisseur de l'ordre du micron. Ces dimensions permettent de compenser la déformation, due à la topologie lors de la fabrication qui n'a pas d'influence sur le fonctionnement du composant MEMS.In the case of conventional MEMS components, the dimensions of the membrane 1 are of the order of 100 microns in the transverse direction d Trans and 300 microns in the longitudinal direction d Long , with an air gap of a few microns and a thickness of the order of the micron. These dimensions make it possible to compensate for the deformation, due to the topology during manufacture which has no influence on the operation of the MEMS component.

Par contre dans le cas de miniMEMS, la topologie de la membrane 1 affecte le fonctionnement du composant miniMEMS le rendant inutilisable.On the other hand, in the case of miniMEMS, the topology of the membrane 1 affects the operation of the miniMEMS component rendering it unusable.

La littérature propose une première solution appliquée aux composants MEMS permettant de réaliser une membrane sensiblement plane. Elle consiste à déposer une succession de couches épaisses de résines constitutives de la couche sacrificielle 7. Une succession de recuits thermiques et de gravures sèches est alors appliquée afin d'améliorer la planéité de la couche sacrificielle avant la fabrication des membranes.The literature proposes a first solution applied to the MEMS components making it possible to produce a substantially flat membrane. It consists in depositing a succession of thick layers of resins constituting the sacrificial layer 7. A succession of thermal anneals and dry etchings is then applied in order to improve the flatness of the sacrificial layer before the manufacture of the membranes.

Ce procédé est complexe et très difficilement applicable à grande échelle pour un résultat limité. De plus, au regard des dimensions, ce procédé n'est pas compatible pour l'élaboration de miniMEMSThis process is complex and very difficult to apply on a large scale for a limited result. In addition, in terms of dimensions, this method is not compatible for the development of miniMEMS

Un but de l'invention est d'élaborer un composant miniMEMS pour lequel le procédé de fabrication permet une mise en oeuvre simple et reproductible à grande échelle.An object of the invention is to develop a miniMEMS component for which the manufacturing method allows a simple and reproducible implementation on a large scale.

Selon un aspect de l'invention, il est proposé un système micro électromécanique (MEMS) capacitif à actionneur électrostatique comprenant un empilement comprenant un substrat, une ligne de transmission de radiofréquences selon une direction longitudinale, une couche diélectrique, ledit système comprenant en outre deux piliers disposés sur l'empilement et supportant une membrane métallique, l'empilement présentant une surface supérieure sensiblement plane.According to one aspect of the invention, there is provided a capacitive micro electromechanical system (MEMS) electrostatic actuator comprising a stack comprising a substrate, a radio frequency transmission line in a longitudinal direction, a dielectric layer, said system further comprising two pillars arranged on the stack and supporting a metal membrane, the stack having a substantially planar upper surface.

Un empilement présentant une surface sensiblement plane permet dans une unique étape de réaliser le dépôt d'une couche sacrificielle de surface sensiblement plane.A stack having a substantially flat surface makes it possible in a single step to deposit a sacrificial layer of substantially flat surface.

Par ailleurs cette technologie ne se limite pas au composant miniMEMS, elle est utilisable pour un composant MEMS classique.Moreover, this technology is not limited to the miniMEMS component, it is usable for a conventional MEMS component.

Selon une variante de l'invention, le substrat comprend un logement dans lequel la ligne de transmission est disposée.According to a variant of the invention, the substrate comprises a housing in which the transmission line is disposed.

Selon une autre variante de l'invention, l'empilement comprend en outre une couche de passivation située entre le substrat et la couche diélectrique et comprenant un logement à l'intérieur duquel la ligne de transmission de radiofréquences est disposée. Cette caractéristique est avantageuse notamment lorsqu'il n'est pas possible d'intégrer la ligne de transmission dans le substrat.According to another variant of the invention, the stack further comprises a passivation layer located between the substrate and the dielectric layer and comprising a housing inside which the radiofrequency transmission line is arranged. This characteristic is advantageous especially when it is not possible to integrate the transmission line in the substrate.

Avantageusement, la hauteur des piliers est comprise entre 100 nm et 500 nm, une dimension transversale de la membrane selon une direction perpendiculaire à la direction longitudinale est comprise entre 10 et 50 microns, une dimension longitudinale de la membrane selon la direction longitudinale est comprise entre 20 et 100 microns et l'épaisseur de la membrane est comprise entre 100 nm et 500 nm.Advantageously, the height of the pillars is between 100 nm and 500 nm, a transverse dimension of the membrane in a direction perpendicular to the longitudinal direction is between 10 and 50 microns, a longitudinal dimension of the membrane in the longitudinal direction is between 20 and 100 microns and the thickness of the membrane is between 100 nm and 500 nm.

Le MEMS proposé selon l'invention est particulièrement recommandé pour l'élaboration de miniMEMS pour lesquels les dimensions réduites de la hauteur des piliers notamment engendrent de nombreux disfonctionnement lorsqu'ils sont réalisés selon les modes de réalisations proposés dans l'état de la technique.The MEMS proposed according to the invention is particularly recommended for the development of miniMEMS for which the reduced dimensions of the height of the pillars in particular cause many malfunctions when they are performed according to the embodiments proposed in the state of the art.

Selon un autre aspect de l'invention, il est proposé un procédé d'élaboration d'un système micro électromécanique RF capacitif à actionneur électrostatique comprenant un empilement comprenant un substrat, une ligne de transmission de radiofréquences selon une direction longitudinale, une couche diélectrique et deux piliers disposés sur le premier empilement supportant une membrane métallique, la surface de l'empilement étant plane. Le procédé comprend notamment une étape d'intégration de la ligne de transmission de radiofréquences dans le substrat ou dans la couche de passivation.According to another aspect of the invention, there is provided a method for producing an electrostatic electrostatic capacitive RF electromechanical system comprising a stack comprising a substrate, a radiofrequency transmission line in a longitudinal direction, a dielectric layer and two pillars arranged on the first stack supporting a metal membrane, the surface of the stack being flat. The method notably comprises a step of integrating the radio frequency transmission line into the substrate or into the passivation layer.

La figure 3 représente un composant miniMEMS selon l'invention, il comprend un empilement 8 comprenant un substrat 4, une ligne de transmission 3, une couche diélectrique 5, et deux piliers 2a ; 2b positionnés sur l'empilement 8 et supportant une membrane 1.The figure 3 represents a miniMEMS component according to the invention, it comprises a stack 8 comprising a substrate 4, a transmission line 3, a dielectric layer 5, and two pillars 2a; 2b positioned on the stack 8 and supporting a membrane 1.

En l'espèce, le substrat 4 comprend un logement 9 dans lequel la ligne de transmission 3 est disposée, la ligne de transmission 3 s'étendant selon une direction longitudinale parallèle à la direction de propagation du signal Sig. Typiquement, le substrat 4 comprend du silicium et comprend une couche de passivation comprenant du SiO2 mais peut tout aussi bien être en céramique, saphir ou tout autre matériau classiquement utilisé.In this case, the substrate 4 comprises a housing 9 in which the transmission line 3 is arranged, the transmission line 3 extending in a longitudinal direction parallel to the propagation direction of the Sig signal. Typically, the substrate 4 comprises silicon and comprises a passivation layer comprising SiO 2 but may equally well be ceramic, sapphire or any other conventionally used material.

Les dimensions du logement 9 sont adaptées pour recevoir la ligne de transmission 3 permettant d'éviter la formation d'un espace entre les parois latérales du logement 9 et la ligne de transmission 3, ou, d'éviter la présence de bourrelets autour de la ligne de transmission 3. En d'autres termes, la ligne de transmission 3 est enfouie à l'intérieur du substrat 4, l'ensemble comprenant le substrat 4 et la ligne de transmission 3 présentant une surface sensiblement plane. Avantageusement, la ligne de transmission 3 comprend un métal hautement conducteur, généralement de l'or.The dimensions of the housing 9 are adapted to receive the transmission line 3 to prevent the formation of a space between the side walls of the housing 9 and the transmission line 3, or to avoid the presence of beads around the transmission line 3. In other words, the transmission line 3 is buried inside the substrate 4, the assembly comprising the substrate 4 and the transmission line 3 having a substantially flat surface. Advantageously, the transmission line 3 comprises a highly conductive metal, usually gold.

Une première dimension transverse d1 de la membrane 1 selon la direction perpendiculaire à la direction longitudinale dLong mesure entre 10 et 50 microns.A first transverse dimension d1 of the membrane 1 in the direction perpendicular to the longitudinal direction d Long is between 10 and 50 microns.

Une deuxième dimension longitudinale d2 de la membrane 1 selon la direction longitudinale dLong mesure entre 20 et 100 microns. L'épaisseur de la membrane 1 est comprise entre 100 et 500 nm.A second longitudinal dimension d2 of the membrane 1 in the longitudinal direction d Long is between 20 and 100 microns. The thickness of the membrane 1 is between 100 and 500 nm.

La dimension transverse de la ligne de transmission 3 est légèrement inférieure à la dimension transverse d1 de la membrane 1. Par ailleurs, l'épaisseur de la ligne de transmission 3 est un paramètre permettant de limiter les pertes ohmiques. L'épaisseur de la ligne de transmission dépend notamment du matériau utilisé pour réaliser la ligne de transmission 3 et du signal radiofréquences propagé à l'intérieur de la ligne de transmission 3. De manière générale, plus la fréquence de propagation du signal est basse et plus la ligne de transmission est épaisse. L'épaisseur est généralement comprise entre 500 nm et 1 micron sous la membrane.The transverse dimension of the transmission line 3 is slightly smaller than the transverse dimension d1 of the membrane 1. Furthermore, the thickness of the transmission line 3 is a parameter making it possible to limit the ohmic losses. The thickness of the transmission line depends, in particular, on the material used to make the transmission line 3 and the radiofrequency signal propagated inside the transmission line 3. In general, the lower the signal propagation frequency, the lower the frequency of propagation of the signal. the longer the transmission line is thick. The thickness is generally between 500 nm and 1 micron under the membrane.

En variante, l'empilement 8 peut comprendre en outre une couche de passivation 10, disposée à la surface du substrat 4, et comprenant un logement 9 dans lequel est disposée la ligne de transmission 3. Typiquement, la couche de passivation 10 comprend un matériau diélectrique à faible perte et faible permittivité relative tels que du Si3N4 ou du SiO2. L'épaisseur de la couche de passivation 10 est égale à l'épaisseur de la ligne de transmission 3 pour permettre l'enterrement de la ligne de transmission 3.Alternatively, the stack 8 may further comprise a passivation layer 10, disposed on the surface of the substrate 4, and comprising a housing 9 in which the transmission line 3 is arranged. Typically, the passivation layer 10 comprises a material low loss dielectric and low relative permittivity such as Si 3 N 4 or SiO 2 . The thickness of the passivation layer 10 is equal to the thickness of the transmission line 3 to allow burial of the transmission line 3.

Cette variante est avantageuse notamment lorsqu'un logement 9 ne peut être formé directement dans le substrat 4. La couche de passivation 10 permet alors d'enfouir la ligne de transmission 3 de manière à ce que la surface du premier empilement 8 soit sensiblement plane.This variant is particularly advantageous when a housing 9 can not be formed directly in the substrate 4. The passivation layer 10 then allows to bury the transmission line 3 so that the surface of the first stack 8 is substantially flat.

Une couche diélectrique 5 est disposée à la surface de l'empilement 8 et recouvrant uniquement la ligne de transmission 3, ou, alternativement toute la surface de l'empilement 8. Typiquement, la couche diélectrique 5 comprend du Sl3N4, SiO2 ou tout autre oxyde métallique. L'épaisseur de la couche est généralement comprise entre 50 et 200 nm.A dielectric layer 5 is disposed on the surface of the stack 8 and covering only the transmission line 3, or alternatively the entire surface of the stack 8. Typically, the dielectric layer 5 comprises Sl 3 N 4 , SiO 2 or any other metal oxide. The thickness of the layer is generally between 50 and 200 nm.

Deux piliers 2a ; 2b sont disposés à la surface de l'empilement de manière à supporter la membrane 1 métallique. On entend par « piliers » des structures en forme de colonne pouvant supporter une charge. Avantageusement les piliers 2a ; 2b comprennent un métal hautement conducteur généralement de l'or.Two pillars 2a; 2b are arranged on the surface of the stack so as to support the metal membrane 1. Pillars are columnar structures that can support a load. Advantageously the pillars 2a; 2b comprise a highly conductive metal generally gold.

Typiquement, la membrane 1 a une épaisseur comprise entre 100 et 500 nm.Typically, the membrane 1 has a thickness of between 100 and 500 nm.

Un espace entre la surface plane de l'empilement 8 et la membrane 1 définit le gap. Dans le cas d'un composant miniMEMS, le gap est compris entre 300 et 500 nm. Cette faible valeur de gap permet une commutation rapide du composant miniMEMS, la distance à parcourir par la membrane 1 étant faible. La vitesse de commutation est également améliorée par la diminution des dimensions des membranes qui augmente leurs raideurs et donc leurs fréquences de résonances.A space between the flat surface of the stack 8 and the membrane 1 defines the gap. In the case of a miniMEMS component, the gap is between 300 and 500 nm. This small gap value allows a fast switching of the miniMEMS component, the distance to travel through the membrane 1 being low. The switching speed is also improved by decreasing the dimensions of the membranes which increases their stiffness and therefore their resonance frequencies.

Les figures 4a à 4f représentent différentes étapes du procédé d'élaboration d'un composant miniMEMS selon un aspect de l'invention.The Figures 4a to 4f represent different steps of the process of developing a miniMEMS component according to one aspect of the invention.

La figure 4a représente la première étape d'élaboration du composant miniMEMS comprenant deux sous-étapes : une première sous-étape consistant au dépôt de la couche de passivation 10 à la surface du substrat 4 par une technique CVD par exemple et une deuxième sous-étape consistant à la formation du logement 9 par une méthode de gravure.The figure 4a represents the first step of elaboration of the miniMEMS component comprising two sub-steps: a first substep consisting of the deposition of the passivation layer 10 on the surface of the substrate 4 by a CVD technique for example and a second substep of forming the housing 9 by an engraving method.

La figure 4b représente la deuxième étape d'élaboration consistant au dépôt de la ligne de transmission 3 à l'intérieur du logement 9 de la couche de passivation 10. Cette étape est réalisée par une méthode de dépôt métallique de type évaporation.The figure 4b represents the second development step consisting of the deposition of the transmission line 3 inside the housing 9 of the passivation layer 10. This step is performed by an evaporation-type metal deposition method.

La figure 4c représente la troisième étape d'élaboration consistant à déposer la couche diélectrique 6 suivie du dépôt d'une couche métallique appelée électrode commune 11. L'électrode commune 11 est déposée à la surface de l'empilement 8 à l'exception de la surface située sensiblement au-dessus de la ligne de transmission 3. Avantageusement, la couche commune 11 est de l'or ou du cuivre.The figure 4c represents the third development step of depositing the dielectric layer 6 followed by the deposition of a metal layer called the common electrode 11. The common electrode 11 is deposited on the surface of the stack 8 with the exception of the surface located substantially above the transmission line 3. Advantageously, the common layer 11 is gold or copper.

La figure 4d représente la quatrième étape de dépôt de la couche sacrificielle 7 réalisé par enduction centrifuge d'une résine photosensible ou d'un matériau type diélectrique déposé par une technique CVD. La couche sacrificielle 7 est ensuite gravée au niveau des zones sur lesquelles les piliers 2a ; 2b doivent croître.The figure 4d represents the fourth step of deposition of the sacrificial layer 7 made by centrifugal coating of a photosensitive resin or a dielectric type material deposited by a CVD technique. The sacrificial layer 7 is then etched at the level of the areas on which the pillars 2a; 2b must grow.

La figure 4e représente la cinquième étape d'élaboration des piliers 2a ; 2b, cette étape est réalisée par croissance électrolytique à partir de la couche commune 11.The figure 4e represents the fifth stage of development of pillars 2a; 2b, this step is carried out by electrolytic growth from the common layer 11.

La figure 4f représente la sixième étape d'élimination de la couche sacrificielle 7 et d'élimination de l'excès de la couche commune 11 n'ayant pas été utilisé pour la réalisation des piliers 2a ; 2b.The figure 4f represents the sixth step of eliminating the sacrificial layer 7 and eliminating the excess of the common layer 11 that has not been used for producing the pillars 2a; 2b.

Le composant miniMEMS ainsi réalisé comprend l'empilement 8 de surface sensiblement plane comprenant le substrat 4, une couche de passivation 10 comprenant un logement 9 dans lequel est disposée la ligne de transmission 3, et une couche diélectrique 5. Les deux piliers 2a ; 2b situées sur l'empilement 8 supportent la membrane 1.The miniMEMS component thus produced comprises the substantially planar surface stack 8 comprising the substrate 4, a passivation layer 10 comprising a housing 9 in which the transmission line 3 is arranged, and a dielectric layer 5. The two pillars 2a; 2b located on the stack 8 support the membrane 1.

Les figures 5a et 5b représentent un exemple d'utilisation des composants miniMEMS.The Figures 5a and 5b are an example of using the miniMEMS components.

La figure 5a représente un substrat 4 sur lequel est déposée une ligne de transmission 3 dans laquelle le signal Sig se propage. De part et d'autre de la ligne de transmission 3, des lignes conductrices 5a ; 5b sont connectées à la masse.The figure 5a represents a substrate 4 on which is deposited a transmission line 3 in which the Sig signal propagates. On both sides of the transmission line 3, conductive lines 5a; 5b are connected to ground.

Les miniMEMS selon l'invention sont disposés sous forme matricielle. La ligne de transmission 3 est subdivisée en quatre lignes de transmission secondaires 3a, 3b, 3c, 3d.The miniMEMS according to the invention are arranged in matrix form. The transmission line 3 is subdivided into four secondary transmission lines 3a, 3b, 3c, 3d.

Sur chacune des lignes de transmission secondaires 3a, 3b, 3c, 3d, des composants miniMEMS sont disposés en série sur chaque subdivision de la ligne de transmission.On each of the secondary transmission lines 3a, 3b, 3c, 3d, miniMEMS components are arranged in series on each subdivision of the transmission line.

L'atténuation obtenue sur une des lignes de transmission secondaires 3a, 3b, 3c, 3d correspond à l'influence cumulée de l'ensemble des miniMEMS de la matrice.The attenuation obtained on one of the secondary transmission lines 3a, 3b, 3c, 3d corresponds to the cumulative influence of the set of miniMEMS of the matrix.

Ainsi, il est possible de réaliser un composant de type micro-interrupteur en utilisant une matrice de composants miniMEMS permettant de réduire la tension nécessaire pour la commutation de chacun des miniMEMS.Thus, it is possible to make a micro-switch component using a matrix of miniMEMS components to reduce the voltage required for the switching of each miniMEMS.

Par ailleurs, le temps de commutation est lui aussi réduit d'un facteur d'environ 10.In addition, the switching time is also reduced by a factor of about 10.

Claims (8)

Système micro électromécanique (MEMS) capacitif à actionneur électrostatique comprenant un empilement (8) comprenant un substrat (4), une ligne de transmission de radiofréquences (3) selon une direction longitudinale (dLong), une couche diélectrique (5), ledit système comprenant en outre deux piliers (2a ; 2b) disposés sur l'empilement (8) supportant une membrane (1) métallique, le système étant caractérisé en ce que la surface supérieure de l'empilement (8) est plane.Electrostatic micro electromechanical system (MEMS) having an electrostatic actuator comprising a stack (8) comprising a substrate (4), a radio frequency transmission line (3) in a longitudinal direction (d Long ), a dielectric layer (5), said system further comprising two pillars (2a; 2b) disposed on the stack (8) supporting a metal membrane (1), the system being characterized in that the upper surface of the stack (8) is flat. Système selon la revendication 1 dans lequel le substrat (4) comprend un logement (9) dans lequel la ligne de transmission (3) est disposée.The system of claim 1 wherein the substrate (4) comprises a housing (9) in which the transmission line (3) is disposed. Système selon la revendication 1 dans lequel l'empilement (8) comprend en outre une couche de passivation (10) située entre le substrat (4) et la couche diélectrique (5) et comprenant un logement (9) à l'intérieur duquel la ligne de transmission de radiofréquences (3) est disposée.The system of claim 1 wherein the stack (8) further comprises a passivation layer (10) located between the substrate (4) and the dielectric layer (5) and comprising a housing (9) within which the radiofrequency transmission line (3) is arranged. Système selon l'une des revendications précédentes dans lequel la hauteur des piliers (2a ; 2b) est comprise entre 100 nm et 500 nm.System according to one of the preceding claims wherein the height of the pillars (2a; 2b) is between 100 nm and 500 nm. Système selon l'une des revendications précédentes dans lequel une dimension transversale (d1) de la membrane (1) selon une direction perpendiculaire à la direction longitudinale (dLong) est comprise entre 10 et 50 microns.System according to one of the preceding claims wherein a transverse dimension (d1) of the membrane (1) in a direction perpendicular to the longitudinal direction (d Long ) is between 10 and 50 microns. Système selon l'une des revendications précédentes dans lequel une dimension longitudinale (d2) de la membrane (1) selon la direction longitudinale (dLong) est comprise entre 20 et 100 microns.System according to one of the preceding claims wherein a longitudinal dimension (d2) of the membrane (1) in the longitudinal direction (d Long ) is between 20 and 100 microns. Système selon l'une des revendications précédentes dans lequel l'épaisseur de la membrane (1) est comprise entre 100 nm et 500 nm.System according to one of the preceding claims wherein the thickness of the membrane (1) is between 100 nm and 500 nm. Procédé d'élaboration d'un système micro électromécanique (MEMS) capacitif à actionneur électrostatique comprenant un empilement (8) comprenant un substrat (4), une ligne de transmission de radiofréquences (3) selon une direction longitudinale (dLong), une couche diélectrique (5) et deux piliers (2a ; 2b) disposés sur l'empilement (8) supportant une membrane métallique (1), la surface de l'empilement (8) étant plane, caractérisé en ce qu'il comprend une étape d'intégration de la ligne de transmission de radiofréquences (3) dans le substrat (4) ou dans la couche de passivation (10).A method of producing a capacitive electrostatic microelectromechanical system (MEMS) with an electrostatic actuator comprising a stack (8) comprising a substrate (4), a radio frequency transmission line (3) in a longitudinal direction (d Long ), a layer dielectric (5) and two pillars (2a; 2b) arranged on the stack (8) supporting a metal membrane (1), the surface of the stack (8) being flat, characterized in that it comprises a step of integrating the radio frequency transmission line (3) in the substrate (4) or in the passivation layer (10).
EP13198695.2A 2012-12-21 2013-12-20 Capacitive MEMS component with buried transmission line Active EP2747190B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709911A2 (en) * 1994-10-31 1996-05-01 Texas Instruments Incorporated Improved switches
US20100141362A1 (en) * 2008-12-04 2010-06-10 Industrial Technology Research Institute Multi-actuation mems switch
WO2010065517A1 (en) * 2008-12-01 2010-06-10 The Trustees Of Columbia University In The City Of New York Electromechanical devices and methods for fabrication of the same
WO2010138929A1 (en) * 2009-05-28 2010-12-02 Qualcomm Incorporated Mems varactors
EP2506282A1 (en) * 2011-03-28 2012-10-03 Delfmems RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0709911A2 (en) * 1994-10-31 1996-05-01 Texas Instruments Incorporated Improved switches
WO2010065517A1 (en) * 2008-12-01 2010-06-10 The Trustees Of Columbia University In The City Of New York Electromechanical devices and methods for fabrication of the same
US20100141362A1 (en) * 2008-12-04 2010-06-10 Industrial Technology Research Institute Multi-actuation mems switch
WO2010138929A1 (en) * 2009-05-28 2010-12-02 Qualcomm Incorporated Mems varactors
EP2506282A1 (en) * 2011-03-28 2012-10-03 Delfmems RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches

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