EP2731770A1 - Saw for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor - Google Patents
Saw for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactorInfo
- Publication number
- EP2731770A1 EP2731770A1 EP12740104.0A EP12740104A EP2731770A1 EP 2731770 A1 EP2731770 A1 EP 2731770A1 EP 12740104 A EP12740104 A EP 12740104A EP 2731770 A1 EP2731770 A1 EP 2731770A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- frame
- blades
- packs
- silicon
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 83
- 239000010703 silicon Substances 0.000 title claims abstract description 83
- 238000005520 cutting process Methods 0.000 title claims abstract description 32
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000376 reactant Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 229910004721 HSiCl3 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/024—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with the stock carried by a movable support for feeding stock into engagement with the cutting blade, e.g. stock carried by a pivoted arm or a carriage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a plurality of cutting blades
Definitions
- This disclosure generally relates to systems and methods for cutting silicon and, more specifically, to a saw for cutting silicon ingots into seed rods for use in a chemical vapor deposition reactor.
- Ultrapure polysilicon used in the electronic and solar industry is often produced through deposition from gaseous reactants via a chemical vapor deposition (CVD) process conducted within a reactor.
- CVD chemical vapor deposition
- One process used to produce ultrapure polycrystalline silicon in a CVD reactor is referred to as a Siemens process.
- Silicon rods disposed within the reactor are used as seeds to start the process.
- Gaseous silicon-containing reactants flow through the reactor and deposit silicon onto the surface of the rods.
- the gaseous reactants i.e., gaseous precursors
- the reactants are heated to temperatures above 1000°C and under these conditions decompose on the surface of the rods. Silicon is thus deposited on the rods according to the following overall reaction:
- the process is stopped after a layer of silicon having a predetermined thickness has been deposited on the surface of the rods .
- the rods are then extracted from the CVD reactor and the silicon is harvested from the rods for further processing .
- the silicon seed rods used in the reactor are formed from larger blocks or ingots of silicon that are cut by a saw to form the seed rods.
- these saws cut the larger silicon ingots with a number of circular-shaped blades that are disposed in a parallel arrangement.
- eight blades are grouped together in a pack.
- multiple packs of blades are used in a typical saw and operated at the same time to multiple larger silicon ingots.
- Typical saws use either two or four packs of blades.
- the blades in each pack are connected by a drive system to a single motor which rotates the blades.
- the blades and motor are movable with respect to a frame of the saw during operation.
- the larger silicon ingot is disposed on a stationary bed, while the blades and the motor are movable along a track.
- each larger silicon ingot is cut by its respective pack of blades into seven smaller ingots (the two outer slabs are often discarded) as the saw travels along the track.
- the seven smaller ingots are then rotated 90 degrees and cut again by the saw and the two outermost rows of seed rods are often discarded. These smaller ingots are thus cut into a total of 49 silicon seed rods after this second pass through the saw.
- a first aspect is a method for cutting a silicon ingot into a plurality of smaller silicon ingots with a saw for use as silicon seed rods in a chemical vapor deposition polysilicon reactor, the saw comprising a plurality of packs of saw blades connected to at least one motor, the saw blades movable along a track connected to a frame of the saw.
- the method comprises cutting the silicon ingot with one of the plurality of packs of saw blades into a plurality of silicon slabs, wherein the pack of saw blades is moved along the track during cutting of the ingot at a first rate; rotating the plurality of silicon slabs 90 degrees; and cutting the plurality of silicon slabs with the pack of saw blades into a plurality of smaller-sized silicon seed rods for use in the chemical vapor deposition polysilicon reactor, wherein the pack of saw blades is moved along the track during cutting of the plurality of ingots a second rate different than the first rate.
- the system comprises a frame having a first portion and an opposing second portion, the first portion and the second portion movable independent of each other along a longitudinal axis of the frame; a first group of two or more packs of blades connected to the first portion of the frame; a second group of two or more packs of blades connected to the second portion of the frame; a first motor connected to the first group of packs of blades for rotation of the first group of packs of blades; a second motor connected to the second group of packs of blades for rotation of the second group of packs of blades, wherein the first motor is connected to the first portion of the frame and the second motor is connected to the second portion of the frame.
- Yet another aspect is a system for cutting a silicon ingot into a plurality of smaller silicon ingots for use as silicon seed rods in a chemical vapor deposition polysilicon reactor.
- the system comprises a frame having a first portion and an opposing second portion; six or more packs of saw blades connected to the frame, a first group of least three packs of saw blades connected to the first half of the frame, a second group of at least three other packs of saw blades connected to the second half of the frame; a first motor connected to the first group of packs of blades, the first motor configured to rotate the first group of packs of blades; a second motor connected to the second group of packs of blades, the second motor configured to rotate the second group of packs of blades.
- Figure 1 is a top view of a system for cutting larger silicon ingots into silicon seed rods
- Figure 2 is a cross-sectional view of the system of Figure 1 taken along the 2-2 line;
- Figure 3 is a cross-sectional view of the system of
- the embodiments described herein generally relate to systems and methods for cutting larger silicon ingots into silicon seed rods for use in a chemical vapor deposition (CVD) polysilicon reactor. These silicon seed rods are then used during production of polysilicon in the CVD reactor. While reference is made herein to cutting silicon ingots, silicon rods formed according to any suitable method may be cut to form the silicon seed rods described herein. Moreover, these systems and methods described herein may also be used to cut other semiconductor and solar materials.
- CVD chemical vapor deposition
- the silicon ingots 102 ( Figure 2) cut by the saw 100 may be formed according to any suitable process, such as the Czochralski process.
- the ingots 102 typically have a circular cross-sectional shape.
- the ingots 102 may be differently shaped (e.g., square or rectangular) without departing from the scope of the embodiments.
- the larger silicon ingots 102 may have a length of up to about 3000 mm and a diameter of up to about 125 mm.
- the larger silicon ingots 102 may have differing dimensions without departing from the scope of the embodiments.
- the system 100 has a frame 104 with a first portion 110 and an opposing second portion 120 that is laterally adjacent to the first portion.
- a first track 112 is connected to the first portion 110 and a second track 122 is connected to the second portion 120.
- the first portion 110 is movable along the first track 112 in a direction generally parallel to a longitudinal axis of the system 100.
- a first actuator 111 is connected to the first portion 110 and is operable to move the first portion along the first track 112.
- the second portion 120 is likewise movable along the second track 122 in a direction generally parallel to the longitudinal axis.
- a second actuator 121 is connected to the second portion 120. Referring to Figure 2, a first group 114 of packs 116 of saw blades is connected to the first portion 110.
- the first group 114 in the example embodiment includes three packs 116 of saw blades 118 (only one of which is numbered in Figure 2 for clarity) .
- the blades 118 in each pack 116 are spaced apart from each other and configured to cut the larger silicon ingot into silicon seed rods. Accordingly, the blades 118 are spaced apart a distance generally equal to a desired width of the silicon seed rods.
- the blades 118 in each individual pack 116 of blades are connected to an arbor 130 (i.e., a mandrel) such that the blades rotate substantially in unison.
- the arbor 130 is in turn connected to a first drive shaft 132 that is connected to a first motor 134.
- the first motor 134 thus results in rotation of the blades 118 in each pack 116 of saw blades in the first group 114.
- the first motor 134 is connected to the first portion 110 of the frame 104 in the example embodiment and moves along the first track 112 with the first group 114 of packs 116 of saw blades 118.
- the first motor 134 may be connected to other structures in the system 100 such that it remains stationary or does not move in unison with the first portion 110 of the frame 104.
- the first motor 134 is connected to the drive shaft 132 by a flexible drive shaft or other suitable power transmission system.
- a second group of packs of saw blades is connected to the second half of the frame.
- This group of packs of saw blades are not shown for clarity, but are configured the same as or similar to the first group 114 described above. Accordingly, rotation of a second motor 124 connected to the second group of packs of saw blades thus results in rotation of these blades.
- the second motor 124 is connected to the second portion 120 of the frame 104 in the example embodiment and moves along the second track 122 with the second group of packs of saw blades.
- the second motor 124 may be connected to other structures in the system 100 such that it remains stationary or does not move in unison with the second portion 120 of the frame 104.
- the second motor 124 is connected to second group of packs of saw blades by a flexible drive shaft or other suitable power transmission system.
- packs 116, and groups 114 herein reference is intended to be made to the first group and/or the second group of packs of blades unless otherwise noted.
- three packs 116 of blades 118 are included in the first group 114 and the second group and each pack of saw blades includes eight individual blades.
- Other embodiments may use differing numbers of packs 116 of saw blades 118 or blades per pack without departing from the scope of the embodiments.
- some embodiments may use a different number of packs 116 of saw blades 118 for the first group 114 and the second group (i.e., the number of packs for the first group and the second group can be different) .
- each pack 116 of saw blades 118 is used to cut larger silicon ingots 102 into silicon seed rods.
- the larger silicon ingots 102 have a substantially circular cross-section, although in other embodiments they may be shaped differently (e.g., square or rectangular). Ingots of differing cross- sections may be cut into silicon seed rods by the system 100.
- the number of blades 118 per pack 116 and/or spacing between the blades can be changed to accommodate these differently sized ingots.
- the larger silicon ingot 102 is first cut by one of the packs 116 of saw blades 118 into a plurality of slabs during a first pass.
- the larger silicon ingot 102 is cut into nine slabs, and the two outermost slabs are often discarded.
- the remaining seven slabs are then rotated 90 degrees, either by an operator or other mechanical system.
- the slabs are then cut again during a second pass by the pack 116 of blades 118 into 49 silicon seed rods (the two outermost rows of seed rods are often discarded) .
- the seed rods are then removed from the system 100 and either stored for later use or installed in a CVD reactor.
- the two outermost slabs from the first and/or the two outermost rows of seed rods from the second pass may not be discarded.
- each pack 116 of saw blades 118 in each group 114 will be used to cut silicon ingots 102 into silicon seed rods at substantially the same time.
- six larger silicon ingots 102 are cut by the system 100 at substantially the same time.
- the larger silicon ingots 102 are loaded into the system and positioned by a hoist 140 on the frame 104 prior to beginning the first pass.
- six larger silicon ingots 102 may be loaded into the system 100 with each positioned generally parallel to a pack 116 of blades 118.
- the ingots 102 may be secured to the frame 104 of the system 100 by any suitable fasteners (e.g., pneumatic clamps) .
- the actuators 111, 121 then begin moving the first portion 110 and the second portion 120, along with the respective groups 114 of packs 116 of saw blades 118 connected to the respective portions of the frames.
- the motors 124, 134 rotate the groups 114 of packs 116 of saw blades 118 and the blades begin to cut the ingots 102.
- the actuators 111, 121 continue moving the portions 110, 120 until the ingots 102 have been cut into slabs and the first pass is complete.
- the slabs Prior to commencing the second pass, the slabs are then rotated 90 degrees and may be secured to the frame 104 of the system 100 by any suitable fasteners (e.g., pneumatic clamps) .
- the actuators then begin moving the first portion 110 and the second portion 120, along with the respective groups 114 of packs 116 of saw blades 118 connected to the respective portions of the frames.
- the motors 124, 134 rotate the groups 114 of packs 116 of saw blades 118 and the blades begin to cut the slabs.
- the actuators continue moving the portions 110, 120 until the slabs have been cut into silicon seed rods. These seed rods are then removed from the system 110 and either stored for later use or installed in a CVD reactor.
- the rate of movement of the frame portions 110, 120 (and hence the groups 114 of packs 116 of saw blades 118) during the first pass and the second pass may be altered.
- the rate of movement of the frame portions 110, 120 during the first pass may be less than the rate of movement of the portions during the second pass.
- the rate of movement during the first pass may be about 6 mm/min and during the second pass it may be about 10 mm/min.
- the rate of movement of the frame portions 110, 120 during the first pass may be greater than the rate of movement of the portions during the second pass.
- each frame portion 110, 120 may be different during the same pass. That is, during the first pass one frame portion may be moved at a different rate than the other. One frame portion may also be moved at a different rate than the other during the second pass.
- the larger silicon ingot 102 and the resulting slabs remain substantially stationary during cutting by the groups 114 of packs 116 of saw blades 118.
- the groups 114 of packs 116 of saw blades 118 remain stationary during cutting and instead the ingot 102 and resulting slabs are placed on a movable feed table (not shown) .
- the ingot 102 and resulting slabs are fed into the saw blades 118 by lateral movement of the feed table.
- An actuator or other suitable device may be used to move the feed table.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161508233P | 2011-07-15 | 2011-07-15 | |
PCT/EP2012/063799 WO2013010943A1 (en) | 2011-07-15 | 2012-07-13 | Saw for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2731770A1 true EP2731770A1 (en) | 2014-05-21 |
EP2731770B1 EP2731770B1 (en) | 2015-05-27 |
EP2731770B8 EP2731770B8 (en) | 2015-07-15 |
Family
ID=46581933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12740104.0A Active EP2731770B8 (en) | 2011-07-15 | 2012-07-13 | Saw for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130014738A1 (en) |
EP (1) | EP2731770B8 (en) |
KR (1) | KR20140054050A (en) |
CN (1) | CN103813891B (en) |
WO (1) | WO2013010943A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9102035B2 (en) * | 2012-03-12 | 2015-08-11 | MEMC Electronics Materials S.p.A. | Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor |
DE102015219925A1 (en) | 2015-10-14 | 2017-04-20 | Wacker Chemie Ag | Reactor for the deposition of polycrystalline silicon |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2355877A (en) * | 1942-08-18 | 1944-08-15 | Hamilton Watch Co | Processing crystalline structures |
US4475527A (en) * | 1982-06-11 | 1984-10-09 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ingot slicing machine and method |
FR2752768B1 (en) * | 1996-08-27 | 2003-04-11 | Commissariat Energie Atomique | PROCESS FOR OBTAINING A WAFER OF LARGE-SIZE SEMICONDUCTOR MATERIAL AND USE OF THE WAFER OBTAINED FOR MAKING SEMICONDUCTOR-TYPE SUBSTRATES ON INSULATION |
US6595094B1 (en) * | 1999-01-29 | 2003-07-22 | Sumitomo Special Metals Co., Ltd. | Working cutting apparatus and method for cutting work |
US20020157657A1 (en) * | 2001-04-25 | 2002-10-31 | Kulicke & Soffa Investments Inc. | Dicing method and apparatus for cutting panels or wafers into rectangular shaped die |
US7267037B2 (en) * | 2001-05-05 | 2007-09-11 | David Walter Smith | Bidirectional singulation saw and method |
JP4532895B2 (en) * | 2003-12-18 | 2010-08-25 | 株式会社ディスコ | Plate cutting machine |
CN1951658A (en) * | 2005-10-20 | 2007-04-25 | 冯金生 | Monocrystalline silicon squaring mechanism |
US8425279B2 (en) * | 2008-09-30 | 2013-04-23 | Misubishi Polycrystalline Silicon America Corporation (MIPSA) | Apparatus for manufacturing seeds for polycrystalline silicon manufacture |
CN102101324A (en) * | 2009-12-17 | 2011-06-22 | 绿能科技股份有限公司 | Ultrasonic cutting device of silicon ingot |
KR101137534B1 (en) * | 2011-05-23 | 2012-04-20 | 주식회사동아쏠라 | Slim rod cutter |
-
2012
- 2012-07-10 US US13/545,093 patent/US20130014738A1/en not_active Abandoned
- 2012-07-13 KR KR1020147003701A patent/KR20140054050A/en active Search and Examination
- 2012-07-13 CN CN201280044791.7A patent/CN103813891B/en active Active
- 2012-07-13 EP EP12740104.0A patent/EP2731770B8/en active Active
- 2012-07-13 WO PCT/EP2012/063799 patent/WO2013010943A1/en active Application Filing
Non-Patent Citations (1)
Title |
---|
See references of WO2013010943A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2013010943A1 (en) | 2013-01-24 |
EP2731770B1 (en) | 2015-05-27 |
CN103813891B (en) | 2015-11-25 |
US20130014738A1 (en) | 2013-01-17 |
KR20140054050A (en) | 2014-05-08 |
EP2731770B8 (en) | 2015-07-15 |
CN103813891A (en) | 2014-05-21 |
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