EP2715797A4 - Ion implantation and annealing for high efficiency back-contact back-junction solar cells - Google Patents

Ion implantation and annealing for high efficiency back-contact back-junction solar cells

Info

Publication number
EP2715797A4
EP2715797A4 EP12793962.7A EP12793962A EP2715797A4 EP 2715797 A4 EP2715797 A4 EP 2715797A4 EP 12793962 A EP12793962 A EP 12793962A EP 2715797 A4 EP2715797 A4 EP 2715797A4
Authority
EP
European Patent Office
Prior art keywords
annealing
high efficiency
ion implantation
solar cells
junction solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12793962.7A
Other languages
German (de)
French (fr)
Other versions
EP2715797A2 (en
Inventor
Mehrdad M Moslehi
Virendra V Rana
Pawan Kapur
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of EP2715797A2 publication Critical patent/EP2715797A2/en
Publication of EP2715797A4 publication Critical patent/EP2715797A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
EP12793962.7A 2011-05-27 2012-05-29 Ion implantation and annealing for high efficiency back-contact back-junction solar cells Withdrawn EP2715797A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161490859P 2011-05-27 2011-05-27
PCT/US2012/039901 WO2012166749A2 (en) 2011-05-27 2012-05-29 Ion implantation and annealing for high efficiency back-contact back-junction solar cells

Publications (2)

Publication Number Publication Date
EP2715797A2 EP2715797A2 (en) 2014-04-09
EP2715797A4 true EP2715797A4 (en) 2015-05-27

Family

ID=47260262

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12793962.7A Withdrawn EP2715797A4 (en) 2011-05-27 2012-05-29 Ion implantation and annealing for high efficiency back-contact back-junction solar cells

Country Status (3)

Country Link
EP (1) EP2715797A4 (en)
KR (1) KR101396027B1 (en)
WO (1) WO2012166749A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
KR101925934B1 (en) 2012-09-06 2018-12-06 삼성에스디아이 주식회사 Battery pack
GB2521457A (en) * 2013-12-20 2015-06-24 Isis Innovation Charge stabilized dielectric film for electronic devices
CN113871494B (en) * 2020-06-30 2024-03-15 泰州隆基乐叶光伏科技有限公司 Solar cell and manufacturing method thereof
CN117374169B (en) * 2023-12-07 2024-03-12 浙江晶科能源有限公司 Preparation method of back contact solar cell and back contact solar cell

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227094A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Use of chained implants in solar cells
US20090308439A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US20100052088A1 (en) * 2008-09-03 2010-03-04 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US20100124619A1 (en) * 2008-11-14 2010-05-20 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US20100300518A1 (en) * 2009-05-29 2010-12-02 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
US20100304522A1 (en) * 2009-05-05 2010-12-02 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
KR20100128153A (en) * 2009-05-27 2010-12-07 (주)미래컴퍼니 Laser ablation apparatus and method for manufacturing opening using it

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7857907B2 (en) * 2007-01-25 2010-12-28 Au Optronics Corporation Methods of forming silicon nanocrystals by laser annealing
MY159267A (en) 2009-03-24 2016-12-30 Solexel Inc Method for fabricating a three-dimensional thin-film semiconductor substrate from a template

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090227094A1 (en) * 2008-03-05 2009-09-10 Nicholas Bateman Use of chained implants in solar cells
US20090308439A1 (en) * 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US20100052088A1 (en) * 2008-09-03 2010-03-04 Sionyx, Inc. High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation
US20100124619A1 (en) * 2008-11-14 2010-05-20 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
US20100304522A1 (en) * 2009-05-05 2010-12-02 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
KR20100128153A (en) * 2009-05-27 2010-12-07 (주)미래컴퍼니 Laser ablation apparatus and method for manufacturing opening using it
US20100300518A1 (en) * 2009-05-29 2010-12-02 Solexel, Inc. Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing

Also Published As

Publication number Publication date
WO2012166749A2 (en) 2012-12-06
KR101396027B1 (en) 2014-05-19
KR20140041602A (en) 2014-04-04
EP2715797A2 (en) 2014-04-09
WO2012166749A3 (en) 2013-03-28

Similar Documents

Publication Publication Date Title
EP2715802A4 (en) Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
EP2780952A4 (en) Smart photovoltaic cells and modules
EP2732527A4 (en) Systems and methods for solar photovoltaic energy collection and conversion
EP2689308A4 (en) Automatic generation and analysis of solar cell iv curves
GB2486509B (en) Solar photovoltaic power conditioning units
EP2795680A4 (en) Support for solar energy collectors
IL233193A0 (en) System and method for solar energy utilization
HK1219805A1 (en) High efficiency solar receivers including stacked solar cells for concentrator photovoltaics
EP2717325A4 (en) Solar cell and method for manufacturing same
HK1201375A1 (en) Method for manufacturing dye-sensitized solar cells and solar cells so produced
EP2659518A4 (en) Laser processing methods for photovoltaic solar cells
IL227595A0 (en) Systems and methods for photovoltaic micro-inverter power harvesting efficiency increase in shaded conditions
EP2688111A4 (en) Environmentally friendly backsheet for solar cell and method for manufacturing same
EP2747152A4 (en) Solar cell and method for manufacturing same
GB2495166B (en) Single-junction photovoltaic cell
EP2717330A4 (en) Interconnector for solar cells, and solar cell module
EP2693491A4 (en) Protective sheet for solar cells, method for producing same, and solar cell module
EP2660874A4 (en) Multi-junction compound solar cell, multi-junction compound solar battery, and method for manufacturing same
GB201419706D0 (en) High efficiency solar cells fabricated by in expensive pecvd
EP2763186A4 (en) Solar cell and method for manufacturing same
EP2715797A4 (en) Ion implantation and annealing for high efficiency back-contact back-junction solar cells
EP2695200A4 (en) Solar cell and manufacturing method thereof
EP2745058A4 (en) Non-orthogonal solar heat collector and solar energy cogeneration
EP2717327A4 (en) Solar cell and method for manufacturing same
GB2491494B (en) Solar photovoltaic power conditioning units

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20131212

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/18 20060101AFI20141222BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20150429

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/18 20060101AFI20150422BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20151201