EP2702614B1 - Procédé de formation d'émetteurs pour une cellule solaire à contact arrière - Google Patents
Procédé de formation d'émetteurs pour une cellule solaire à contact arrière Download PDFInfo
- Publication number
- EP2702614B1 EP2702614B1 EP12776847.1A EP12776847A EP2702614B1 EP 2702614 B1 EP2702614 B1 EP 2702614B1 EP 12776847 A EP12776847 A EP 12776847A EP 2702614 B1 EP2702614 B1 EP 2702614B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- solid
- dopant source
- state dopant
- regions
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
- 238000000034 method Methods 0.000 title claims description 67
- 239000002019 doping agent Substances 0.000 claims description 197
- 239000000758 substrate Substances 0.000 claims description 93
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 45
- 229920005591 polysilicon Polymers 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 6
- 239000005368 silicate glass Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000000151 deposition Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 9
- 238000013459 approach Methods 0.000 description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000007641 inkjet printing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000443 aerosol Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- Embodiments of the present invention are in the field of renewable energy and, in particular, methods of forming emitters for back-contact solar cells.
- Photovoltaic cells are well known devices for direct conversion of solar radiation into electrical energy.
- solar cells are fabricated on a semiconductor wafer or substrate using semiconductor processing techniques to form a p-n junction near a surface of the substrate.
- Solar radiation impinging on the surface of, and entering into, the substrate creates electron and hole pairs in the bulk of the substrate.
- the electron and hole pairs migrate to p-doped and n-doped regions in the substrate, thereby generating a voltage differential between the doped regions.
- the doped regions are connected to conductive regions on the solar cell to direct an electrical current from the cell to an external circuit coupled thereto.
- KR 2010/0057424 A relates to a method of manufacturing back contact of solar cells.
- US 2009/308438 A1 relates to a trench process and a structure for backside contact solar cells.
- Emitters for back-contact solar cells may be formed by patterning through blanket-deposited doped films. This approach typically involves deposition of a blanket dopant-containing film, deposition of a sacrificial etch resist, etching of the dopant-containing film, and stripping of the etch resist. These multiple process operations increase the manufacturing complexity and cost for solar cell production. Since numerous operations are used, yield may also be reduced.
- a total number of process operations used for doping back-contact solar cells is reduced by using methods described herein.
- one or more of the embodiments of methods described herein may simplify emitter formation.
- such improvements are achieved through selective dopant deposition which combines dopant deposition and patterning in single operation.
- a conventional process having four operations in a portion of a manufacturing flow is reduced to two operations for that portion of the flow.
- a particular example includes replacing the operations: depositing first solid-state dopant source, masking, etching, and then depositing second solid-state dopant source, with the operations: ink jetting first solid-state dopant source and then depositing second solid-state dopant source.
- a conventional process having six operations in a portion of a manufacturing flow is reduced to five operations for that portion of the flow.
- a particular example includes replacing the operations: depositing first solid-state dopant source, masking, etching, depositing second solid-state dopant source, masking, and then etching, with the operations: depositing first solid-state dopant source, masking, etching, ink jetting second solid-state dopant source, and then curing, or with the operations: ink jetting first solid-state dopant source, depositing second solid-state dopant source, curing, masking, and then etching.
- printable dopant sources include ink-jet printable dopant source materials including, but not limited to, spin on glass-based materials or nanoparticle-based materials.
- contacts for a back-contact solar cell may be performed using laser ablation to form holes or openings through an anti-reflective coating (ARC) layer formed above an array of p-type and n-type doped regions on the back-side of the solar cell.
- Conductive contacts such as metal contacts, may then be formed in the openings to provide electrical coupling with the array of p-type and n-type doped regions.
- a second conductivity-type solid-state dopant source is printed between features of an already patterned first conductivity-type solid-state dopant source.
- Figure 1 illustrates a flowchart 100 representing operations in a method of forming emitters for a back-contact solar cell, in accordance with an embodiment of the present invention.
- Figures 2A-2I illustrate cross-sectional views of various stages in the fabrication of a back-contact solar cell, corresponding to operations of flowchart 100, in accordance with an embodiment of the present invention.
- a method of forming emitters for a back-contact solar cell includes optionally forming a thin dielectric layer 202 on a substrate 200.
- the thin dielectric layer 202 is composed of silicon dioxide and has a thickness approximately in the range of 5-50 Angstroms. In one embodiment, the thin dielectric layer 202 performs as a tunneling oxide layer.
- substrate 200 is a bulk single-crystal substrate, such as an n-type doped single crystalline silicon substrate. However, in an alternative embodiment, substrate 200 includes a polycrystalline silicon layer disposed on a global solar cell substrate.
- the method of forming emitters for the back-contact solar cell also includes optionally forming a polysilicon layer 204 on the thin dielectric layer 202. It is to be understood that use of the term polysilicon layer is intended to also cover material that can be described as amorphous- or ⁇ -silicon.
- the method of forming emitters for the back-contact solar cell includes forming (layer 205 of Figure 2C ) and patterning a first solid-state dopant source 206 of a first conductivity type on the polysilicon layer 204.
- the patterning forms gaps 208 exposing regions of the polysilicon layer 204 between a plurality of regions of the first solid-state dopant source 206, as depicted in Figure 2D .
- forming and patterning the first solid-state dopant source 206 includes forming and patterning a layer of boron silicate glass (BSG) or a layer of phosphorus silicate glass (PSG).
- BSG or PSG layer is formed by chemical vapor deposition as a uniform, blanket layer and then patterned by a lithography and etch process.
- the BSG or PSG layer is formed by a chemical vapor deposition technique such as, but not limited to, atmospheric pressure chemical vapor deposition (APCVD), plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), or ultra-high vacuum chemical vapor deposition (UHVCVD).
- APCVD atmospheric pressure chemical vapor deposition
- PECVD plasma-enhanced chemical vapor deposition
- LPCVD low-pressure chemical vapor deposition
- UHVCVD ultra-high vacuum chemical vapor deposition
- the BSG or PSG layer is deposited already having a pattern and, thus, the forming and patterning are performed simultaneously.
- the patterned BSG or PSG layer is formed by a screen-printing approach.
- a solid-state dopant source is a layer of film that includes dopant impurity atoms and can be deposited above a substrate. This is in contrast to an ion implantation approach.
- the method of forming emitters for the back-contact solar cell also includes forming, by printing, regions of a second solid-state dopant source 210 of a second conductivity type above the substrate 200.
- the printing is performed by a technique such as, but not limited to, ink-jet printing, screen printing, or aerosol printing.
- the regions of the second solid-state dopant source 210 are formed in the gaps 208 of the plurality of regions of the first solid-state dopant source 206 but not in contact with the plurality of regions of the first solid-state dopant source 206, as depicted in Figure 2E . And, in a more specific embodiment, the regions of the second solid-state dopant source 210 are spaced apart from the plurality of regions of the first solid-state dopant source 206, as is also depicted in Figure 2E . In an embodiment, the first solid-state dopant source 205/206 and the second solid-state dopant source 210 are formed on the polysilicon layer 204.
- the first solid-state dopant source 205/206 and the second solid-state dopant source 210 are formed directly on a substrate (such as directly on substrate 200) or on a thin oxide layer on the surface of the substrate.
- the second solid-state dopant source 210 is composed of a material such as, but not limited to, a spin-on-glass precursor material or a nanoparticle material.
- the spin-on-glass precursor material or the nanoparticle material includes dopants of the second conductivity type disposed therein.
- the second conductivity type is n-type and the dopant impurity atoms are phosphorus atoms.
- the second conductivity type is p-type and the dopant impurity atoms are boron atoms.
- the first conductivity type is opposite the second conductivity type.
- the first conductivity type is p-type
- the second conductivity type is n-type
- the first solid-state dopant source 205/206 is composed of BSG.
- the first conductivity type is n-type
- the second conductivity type is p-type
- the first solid-state dopant source 205/206 is composed of PSG.
- the method of forming emitters for the back-contact solar cell optionally further includes forming trenches 212 partially into the substrate 200, between the regions of the second solid-state dopant source 210 and the plurality of regions of the first solid-state dopant source 206.
- the trenches 212 are formed in the polysilicon layer 204, in the thin dielectric layer 202, and partially in the substrate 200, as depicted in Figure 2F .
- the method of forming emitters for the back-contact solar cell further includes, subsequent to forming the trenches 212, heating 250 the substrate 200.
- the heating drives dopants from the first and second solid-state dopant sources 206 and 210.
- the first and second solid-state dopant sources 206 and 210 are formed on the polysilicon layer 204 and heating the substrate 200 drives dopants from the first and second solid-state dopant sources 206 and 210, respectively, into the polysilicon layer 204.
- the first and second solid-state dopant sources 206 and 210 are formed directly on substrate 2090 or on a thin oxide on substrate 200, and heating the substrate 200 drives dopants from the first and second solid-state dopant sources 206 and 210, respectively, into the substrate 200.
- the substrate 200 is a bulk crystalline silicon substrate, and the first solid-state dopant source 206 and the second solid-state dopant source 210 are formed on the bulk crystalline silicon substrate.
- the bulk crystalline silicon substrate is then heated to drive dopants from the first and second solid-state dopant sources 206 and 210 into the bulk crystalline silicon substrate.
- the method of forming emitters for the back-contact solar cell optionally further includes, texturizing portions 214 of the substrate 200 exposed by the trenches 212.
- the texturing provides a random texture pattern.
- the random texturing pattern may be formed by applying an anisotropic etching process to exposed regions of substrate 200 and may thus be determined by crystal planes, such single-crystalline silicon planes, of the substrate 200.
- the heating of operation 112 hardens the second solid-state dopant source 210. Then, during the texturizing of the portions 214 of the substrate 200 exposed by the trenches 212, the hardened second solid-state dopant source acts as a mask.
- the hardened second solid-state dopant source acts as a mask to provide selectivity to hydroxide (OH - ) based etching. That is, inherent in the doping process using the printed solid-state dopant source is an ability to provide a mask for texturizing operations. It is to be understood that other doping approaches, such as atmospheric pressure chemical vapor deposition (APCVD), implantation, or laser doping, may not provide routes for such masking that are inherent in the doping process.
- APCVD atmospheric pressure chemical vapor deposition
- implantation implantation
- laser doping may not provide routes for such masking that are inherent in the doping process.
- heating the substrate 200 also includes activating the dopants from the first and second solid-state dopant sources 206 and 210, respectively, to form a plurality of polysilicon regions 220 of the second conductivity type and a plurality of polysilicon regions 222 of the first conductivity type.
- the activating includes changing the incorporation of at least some of the dopants from interstitial to substitutional within polysilicon layer 204.
- the first and second solid-state dopant sources 206 and 210 are also removed, as is also depicted in Figure 2H .
- the first and second solid-state dopant sources 206 and 210 are removed by using a wet etch technique by applying a wet solution including aqueous hydrofluoric acid or another source of HF. In another such embodiment, the first and second solid-state dopant sources 206 and 210 are removed by plasma etching.
- the method of forming emitters for the back-contact solar cell optionally further includes forming a dielectric layer 224 above the plurality of polysilicon regions 220 of the second conductivity type, above the plurality of polysilicon regions 222 of the first conductivity type, and above the exposed portions of substrate 200.
- the dielectric layer 224 is an anti-reflective coating (ARC) layer.
- the method of forming emitters for the back-contact solar cell optionally further includes forming, by laser abalation, a plurality of contact openings 226 to the plurality of polysilicon regions 220 of the second conductivity type and to the plurality of polysilicon regions 222 of the first conductivity type.
- Conductive contacts 228 may then be formed in the plurality of contact openings 226 and coupled to the plurality of polysilicon regions 220 of the second conductivity type and to the plurality of polysilicon regions 222 of the first conductivity type.
- the conductive contacts 228 are composed of metal and are formed by a deposition, lithographic, and etch approach.
- a second conductivity-type solid-state dopant source is formed by blanket deposition over features of a printed first conductivity-type solid-state dopant source.
- Figure 3 illustrates a flowchart 300 representing operations in a method of forming emitters for a back-contact solar cell, in accordance with another embodiment of the present invention.
- Figures 2A, 2B , and 4A-4E , 2I , and 2J illustrate cross-sectional views of various stages in the fabrication of a back-contact solar cell, corresponding to operations of flowchart 300, in accordance with an embodiment of the present invention.
- a method of forming emitters for a back-contact solar cell includes optionally forming a thin dielectric layer 202 on a substrate 200.
- the thin dielectric layer 202 is composed of silicon dioxide and has a thickness approximately in the range of 5-50 Angstroms. In one embodiment, the thin dielectric layer 202 performs as a tunneling oxide layer.
- substrate 200 is a bulk single-crystal substrate, such as an n-type doped single crystalline silicon substrate. However, in an alternative embodiment, substrate 200 includes a polycrystalline silicon layer disposed on a global solar cell substrate.
- the method of forming emitters for the back-contact solar cell also includes optionally forming a polysilicon layer 204 on the thin dielectric layer 202. It is to be understood that use of the term polysilicon layer is intended to also cover material that can be described as amorphous- or ⁇ -silicon.
- the method of forming emitters for the back-contact solar cell includes forming, by printing, a first solid-state dopant source 252 of a first conductivity type above substrate 200.
- the first solid-state dopant source 252 includes a plurality of regions separated by gaps 254.
- the printing is performed by a technique such as, but not limited to, ink-jet printing, screen printing, or aerosol printing.
- the gaps 254 expose regions of the polysilicon layer 204 between a plurality of regions of the first solid-state dopant source 252, as depicted in Figure 4A .
- the total coverage of the first solid-state dopant source 252 above the substrate 200 is in the range of 10-15% by surface area, e.g., approximately 12%.
- the first solid-state dopant source 252 is composed of a material such as, but not limited to, a spin-on-glass precursor material or a nanoparticle material.
- the spin-on-glass precursor material or the nanoparticle material includes dopants of the first conductivity type disposed therein.
- the first conductivity type is n-type and the dopant impurity atoms are phosphorus atoms.
- the first conductivity type is p-type and the dopant impurity atoms are boron atoms.
- the method of forming emitters for the back-contact solar cell also includes forming, by chemical vapor deposition, a second solid-state dopant source 256 of a second conductivity type above the first solid-state dopant source 252.
- the second solid-state dopant source 256 is also formed above the substrate 200, in the gaps 254 of the plurality of regions of the first solid-state dopant source 252.
- forming the second solid-state dopant source 256 includes forming a layer of BSG or a layer of PSG.
- the BSG or PSG layer is formed by chemical vapor deposition as a uniform, blanket layer.
- the second conductivity type is opposite the first conductivity type.
- the first conductivity type is p-type
- the second conductivity type is n-type
- the second solid-state dopant source 256 is composed of PSG.
- the first conductivity type is n-type
- the second conductivity type is p-type
- the second solid-state dopant source 256 is composed of BSG.
- the first solid-state dopant source 252 and portions of the second solid-state dopant source 256 are formed on the polysilicon layer 204.
- the first solid-state dopant source 252 and the portions of the second solid-state dopant source 256 are formed directly on a substrate (such as directly on substrate 200) or on a thin oxide layer on the surface of the substrate.
- the method of forming emitters for the back-contact solar cell also includes patterning the second solid-state dopant source 256 to form first regions 258 of the second solid-state dopant source 256 in the gaps 254 of the plurality of regions of the first solid-state dopant source 252 but not in contact with the plurality of regions of the first solid-state dopant source 252. Furthermore, second regions 260 of the second solid-state dopant source 256 are also formed on the plurality of regions of the first solid-state dopant source 252, as depicted in Figure 4C .
- patterning the second solid-state dopant source 256 includes patterning a layer of BSG or a layer of PSG.
- the BSG or PSG layer is formed by chemical vapor deposition as a uniform, blanket layer and then patterned by a lithography and etch process.
- the BSG or PSG layer is formed by a chemical vapor deposition technique such as, but not limited to, atmospheric pressure chemical vapor deposition (APCVD), plasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), or ultra-high vacuum chemical vapor deposition (UHVCVD).
- APCVD atmospheric pressure chemical vapor deposition
- PECVD plasma-enhanced chemical vapor deposition
- LPCVD low-pressure chemical vapor deposition
- UHVCVD ultra-high vacuum chemical vapor deposition
- first regions 258 of the second solid-state dopant source 256 are formed in the gaps 254 of the plurality of regions of the first solid-state dopant source 252 but not in contact with the plurality of regions of the first solid-state dopant source 252, as depicted in Figure 4C . And, in a more specific embodiment, the first regions 258 of the second solid-state dopant source 256 are spaced apart from the plurality of regions of the first solid-state dopant source 252, as is also depicted in Figure 4C .
- the method of forming emitters for the back-contact solar cell optionally further includes forming trenches 262 partially into the substrate 200, between the first regions 258 of the second solid-state dopant source 256 and the plurality of regions of the first solid-state dopant source 252.
- the trenches 262 are formed in the polysilicon layer 204, in the thin dielectric layer 202, and partially in the substrate 200, as depicted in Figure 4D .
- the method of forming emitters for the back-contact solar cell further includes, subsequent to forming the trenches 262, heating 250 the substrate 200.
- the heating drives dopants from the first and second solid-state dopant sources 252 and 258.
- the first and second solid-state dopant sources 252 and 258 are formed on the polysilicon layer 204 and heating the substrate 200 drives dopants from the first and second solid-state dopant sources 252 and 258, respectively, into the polysilicon layer 204.
- the first and second solid-state dopant sources 252 and 258 are formed directly on substrate 200 or on a thin oxide on substrate 200, and heating the substrate 200 drives dopants from the first and second solid-state dopant sources 252 and 258, respectively, into the substrate 200.
- the substrate 200 is a bulk crystalline silicon substrate, and the first solid-state dopant source 252 and the second solid-state dopant source 258 are formed on the bulk crystalline silicon substrate.
- the bulk crystalline silicon substrate is then heated to drive dopants from the first and second solid-state dopant sources 252 and 258 into the bulk crystalline silicon substrate.
- the first solid-state dopant source 252 is sufficiently thick to block driving of dopants from the second regions 260 of the second solid-state dopant source 256 through the plurality of regions of the first solid-state dopant source 252.
- the first regions 258 of the second solid-state dopant source 256 may be desirable to drive dopants from the first regions 258 of the second solid-state dopant source 256 into an underlying polysilicon layer or substrate, it may not be desirable for dopants to be driven from the second regions 260 of the second solid-state dopant source 256 into the underlying polysilicon layer or substrate.
- the first solid-state dopant source 252 it may only be desirable to drive dopants from the first solid-state dopant source 252, underlying the second regions 260 of the second solid-state dopant source 256, into the underlying polysilicon layer or substrate.
- other parameters that may be considered for adequate blocking of the driving of dopants from the second regions 260 of the second solid-state dopant source 256 through the plurality of regions of the first solid-state dopant source 252 include, but need not be limited to, dopant concentration in the first solid-state dopant source 252, density of the first solid-state dopant source 252, identity of dopant species, and timing for the heating operation 314.
- the method of forming emitters for the back-contact solar cell optionally further includes, texturizing portions 264 of the substrate 200 exposed by the trenches 262.
- the texturing provides a random texture pattern.
- the random texturing pattern may be formed by applying an anisotropic etching process to exposed regions of substrate 200 and may thus be determined by crystal planes, such single-crystalline silicon planes, of the substrate 200.
- the heating of operation 314 hardens the first solid-state dopant source 252. Then, during the texturizing of the portions 264 of the substrate 200 exposed by the trenches 262, the hardened first solid-state dopant source acts as a mask.
- heating the substrate 200 also includes activating the dopants from the first and second solid-state dopant sources 252 and 258, respectively, to form a plurality of polysilicon regions 220 of the first conductivity type and a plurality of polysilicon regions 222 of the second conductivity type.
- the activating includes changing the incorporation of at least some of the dopants from interstitial to substitutional within polysilicon layer 204.
- the first and second solid-state dopant sources 252 and 258 are also removed, as is also depicted in Figure 2H .
- the first and second solid-state dopant sources 252 and 258 are removed by using a wet etch technique by applying a wet solution including aqueous hydrofluoric acid or another source of HF. In another such embodiment, the first and second solid-state dopant sources 252 and 258 are removed by plasma etching.
- the method of forming emitters for the back-contact solar cell optionally further includes forming a dielectric layer 224 above the plurality of polysilicon regions 220 of the first conductivity type, above the plurality of polysilicon regions 222 of the second conductivity type, and above the exposed portions of substrate 200.
- a plurality of contact openings 226 may then be formed, exposing the plurality of polysilicon regions 220 of the first conductivity type and to the plurality of polysilicon regions 222 of the second conductivity type.
- Conductive contacts 228 may then be formed in the plurality of contact openings 226 and coupled to the plurality of polysilicon regions 220 of the first conductivity type and to the plurality of polysilicon regions 222 of the second conductivity type.
- a method includes forming, by chemical vapor deposition, a first solid-state dopant source of a first conductivity type above a substrate, the first solid-state dopant source including a plurality of regions separated by gaps.
- the method also includes forming, by printing, regions of a second solid-state dopant source of a second conductivity type above the substrate, in the gaps of the plurality of regions of the first solid-state dopant source but not in contact with the plurality of regions of the first solid-state dopant source, wherein the first conductivity type is opposite the second conductivity type.
- the second solid-state dopant source is composed of a spin-on-glass precursor material or a nanoparticle material.
- the first conductivity type is p-type
- the second conductivity type is n-type
- the first solid-state dopant source is composed of boron silicate glass (BSG).
- BSG boron silicate glass
- the first conductivity type is n-type
- the second conductivity type is p-type
- the first solid-state dopant source is composed of phosphorus silicate glass (PSG).
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Claims (12)
- Procédé de formation d'émetteurs pour une cellule solaire à contact arrière, le procédé consistant à :former, par dépôt chimique en phase vapeur, une première source de dopant à l'état solide (206) d'un premier type de conductivité au-dessus d'un substrat, la première source de dopant à l'état solide (206) comprenant une pluralité de régions séparées par des espaces (208) ;former, par impression, des régions d'une seconde source de dopant à l'état solide (210) d'un second type de conductivité au-dessus du substrat (200), dans les espaces (208) de la pluralité de régions de la première source de dopant à l'état solide (206) mais pas en contact avec la pluralité de régions de la première source de dopant à l'état solide (206), le premier type de conductivité étant opposé au second type de conductivité et les régions de la seconde source de dopant à l'état solide (208) étant espacées de la pluralité de régions de la première source de dopant à l'état solide (206) ;former des tranchées (212) partiellement dans le substrat (200), entre les régions de la seconde source de dopant à l'état solide (208) et la pluralité de régions de la première source de dopant à l'état solide (206) ; puis ensuitechauffer le substrat (200) pour entraîner les dopants des première et seconde sources de dopant à l'état solide (206, 208), le chauffage durcissant la seconde source de dopant à l'état solide (208).
- Procédé de la revendication 1, consistant en outre à :à la suite de la formation des tranchées (212) et du chauffage, texturiser des parties (214) du substrat (200) exposées par les tranchée (212), la seconde source de dopant à l'état solide (210) durcie agissant comme un masque pendant la texturisation.
- Procédé de la revendication 1 ou 2, consistant en outre à :avant la formation de la première source de dopant à l'état solide (205), former une fine couche diélectrique (202) sur le substrat ; etformer une couche de polysilicium (204) sur la fine couche diélectrique (202), la première source de dopant à l'état solide (205, 206) et la seconde source de dopant à l'état solide (208) étant formées sur la couche de polysilicium (204).
- Procédé de la revendication 3, consistant en outre à :chauffer le substrat (200) pour entraîner les dopants des première et seconde sources de dopant à l'état solide (206, 208) dans la couche de polysilicium (204).
- Procédé de l'une quelconque des revendications 1 à 4, dans lequel le substrat (200) est un substrat de silicium cristallin brut et dans lequel la première source de dopant à l'état solide (206) et la seconde source de dopant à l'état solide (208) sont formées sur le substrat de silicium cristallin brut.
- Procédé de la revendication 5, consistant en outre à :chauffer le substrat de silicium cristallin brut (200) pour entraîner les dopants des première et seconde sources de dopant à l'état solide (206, 208) dans le substrat de silicium cristallin brut.
- Procédé de l'une quelconque des revendications 1 à 6, dans lequel la seconde source de dopant à l'état solide (208) comprend un matériau précurseur de verre déposé par centrifugation ou un matériau de nanoparticule.
- Procédé de l'une quelconque des revendications 1 à 7, dans lequel le premier type de conductivité est le type p, le second type de conductivité est le type n et la première source de dopant à l'état solide (206) comprend du verre borosilicaté (BSG).
- Procédé de l'une quelconque des revendications 1 à 7, dans lequel le premier type de conductivité est le type n, le second type de conductivité est le type p et la première source de dopant à l'état solide (206) comprend du verre de phosphore silicaté (PSG).
- Procédé de formation d'émetteurs pour une cellule solaire à contact arrière, le procédé consistant à :former, par impression, une première source de dopant à l'état solide (252) d'un premier type de conductivité au-dessus d'un substrat (200), la première source de dopant à l'état solide (252) comprenant une pluralité de régions séparées par des espaces (254) ;former, par dépôt chimique en phase vapeur, une seconde source de dopant à l'état solide (256) d'un second type de conductivité au-dessus de la première source de dopant à l'état solide (252) et au-dessus du substrat (200) dans les espaces (254) de la pluralité de régions de la première source de dopant à l'état solide (252), le premier type de conductivité étant opposé au second type de conductivité ; etstructurer la seconde source de dopant à l'état solide (256) pour former des premières régions (258) de la seconde source de dopant à l'état solide dans les espaces (254) de la pluralité de régions de la première source de dopant à l'état solide (252) mais pas en contact avec la pluralité de régions de la première source de dopant à l'état solide (252) et des secondes régions (260) de la seconde source de dopant à l'état solide (256) sur la pluralité de régions de la première source de dopant à l'état solide (252),dans lequel la première source de dopant à l'état solide (252) est suffisamment épaisse pour bloquer l'entraînement des dopants des secondes régions (260) de la seconde source de dopant à l'état solide à travers la pluralité de régions de la première source de dopant à l'état solide (252),dans lequel les premières régions (258) de la seconde source de dopant à l'état solide sont espacées de la pluralité de régions de la première source de dopant à l'état solide (252), le procédé consistant en outre à :former des tranchées (262) partiellement dans le substrat (200), entre les premières régions (258) de la seconde source de dopant à l'état solide et la pluralité de régions de la première source de dopant à l'état solide (252) ; puis ensuitechauffer le substrat (200) pour entraîner les dopants de la première source de dopant à l'état solide (252) et les premières régions (258) de la seconde source de dopant à l'état solide, le chauffage durcissant la première source de dopant à l'état solide (252).
- Procédé de la revendication 10, consistant en outre à :à la suite de la formation des tranchées (262) et du chauffage, texturiser des parties (264) du substrat (200) exposées par les tranchée (262), la seconde source de dopant à l'état solide (252) durcie agissant comme un masque pendant la texturisation.
- Procédé de la revendication 10 ou 11, consistant en outre à :avant la formation de la première source de dopant à l'état solide (252), former une fine couche diélectrique (202) sur le substrat (200) ; etformer une couche de polysilicium (204) sur la fine couche diélectrique (202), la première source de dopant à l'état solide (252) et la seconde source de dopant à l'état solide (256) au-dessus du substrat (200) dans les espaces (254) de la pluralité de régions de la première source de dopant à l'état solide (252) étant formées sur la couche de polysilicium (204).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161478804P | 2011-04-25 | 2011-04-25 | |
US13/372,235 US8802486B2 (en) | 2011-04-25 | 2012-02-13 | Method of forming emitters for a back-contact solar cell |
PCT/US2012/025264 WO2012148523A1 (fr) | 2011-04-25 | 2012-02-15 | Procédé de formation d'émetteurs pour une cellule solaire à contact arrière |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2702614A1 EP2702614A1 (fr) | 2014-03-05 |
EP2702614A4 EP2702614A4 (fr) | 2014-09-24 |
EP2702614B1 true EP2702614B1 (fr) | 2018-04-11 |
Family
ID=47020339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12776847.1A Not-in-force EP2702614B1 (fr) | 2011-04-25 | 2012-02-15 | Procédé de formation d'émetteurs pour une cellule solaire à contact arrière |
Country Status (7)
Country | Link |
---|---|
US (3) | US8802486B2 (fr) |
EP (1) | EP2702614B1 (fr) |
JP (2) | JP6026508B2 (fr) |
KR (1) | KR20140041494A (fr) |
CN (2) | CN103493216B (fr) |
TW (2) | TWI545786B (fr) |
WO (1) | WO2012148523A1 (fr) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8802486B2 (en) * | 2011-04-25 | 2014-08-12 | Sunpower Corporation | Method of forming emitters for a back-contact solar cell |
US9054255B2 (en) | 2012-03-23 | 2015-06-09 | Sunpower Corporation | Solar cell having an emitter region with wide bandgap semiconductor material |
US20140158192A1 (en) * | 2012-12-06 | 2014-06-12 | Michael Cudzinovic | Seed layer for solar cell conductive contact |
US20140166094A1 (en) * | 2012-12-18 | 2014-06-19 | Paul Loscutoff | Solar cell emitter region fabrication using etch resistant film |
US20140166093A1 (en) * | 2012-12-18 | 2014-06-19 | Paul Loscutoff | Solar cell emitter region fabrication using n-type doped silicon nano-particles |
US8785233B2 (en) | 2012-12-19 | 2014-07-22 | Sunpower Corporation | Solar cell emitter region fabrication using silicon nano-particles |
CN105190903B (zh) * | 2013-03-15 | 2017-07-14 | 太阳能公司 | 太阳能电池降低的接触电阻及延长的寿命 |
US9401450B2 (en) * | 2013-12-09 | 2016-07-26 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
US9577134B2 (en) * | 2013-12-09 | 2017-02-21 | Sunpower Corporation | Solar cell emitter region fabrication using self-aligned implant and cap |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
US20150179834A1 (en) * | 2013-12-20 | 2015-06-25 | Mukul Agrawal | Barrier-less metal seed stack and contact |
US20150270421A1 (en) * | 2014-03-20 | 2015-09-24 | Varian Semiconductor Equipment Associates, Inc. | Advanced Back Contact Solar Cells |
US20150280043A1 (en) * | 2014-03-27 | 2015-10-01 | David D. Smith | Solar cell with trench-free emitter regions |
US9947812B2 (en) | 2014-03-28 | 2018-04-17 | Sunpower Corporation | Metallization of solar cells |
US9818903B2 (en) * | 2014-04-30 | 2017-11-14 | Sunpower Corporation | Bonds for solar cell metallization |
US9263625B2 (en) * | 2014-06-30 | 2016-02-16 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
KR101622091B1 (ko) * | 2014-08-20 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
US9837576B2 (en) * | 2014-09-19 | 2017-12-05 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion |
US9246046B1 (en) * | 2014-09-26 | 2016-01-26 | Sunpower Corporation | Etching processes for solar cell fabrication |
US9559245B2 (en) * | 2015-03-23 | 2017-01-31 | Sunpower Corporation | Blister-free polycrystalline silicon for solar cells |
US9997652B2 (en) * | 2015-03-23 | 2018-06-12 | Sunpower Corporation | Deposition approaches for emitter layers of solar cells |
US20160284917A1 (en) * | 2015-03-27 | 2016-09-29 | Seung Bum Rim | Passivation Layer for Solar Cells |
US9634178B1 (en) | 2015-12-16 | 2017-04-25 | Sunpower Corporation | Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells |
US10079319B2 (en) * | 2015-12-16 | 2018-09-18 | Sunpower Corporation | Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers and the resulting solar cells |
CN106112870B (zh) * | 2016-08-30 | 2018-09-04 | 通威太阳能(合肥)有限公司 | 一种5bb组件电池串定位工装 |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
CN107731957A (zh) * | 2017-09-29 | 2018-02-23 | 浙江晶科能源有限公司 | 一种太阳能电池的制备方法 |
EP3982421A1 (fr) | 2020-10-09 | 2022-04-13 | International Solar Energy Research Center Konstanz E.V. | Procédé de modification locale de la résistance à la gravure dans une couche de silicium, utilisation de ce procédé pour la production de cellules solaires à contact de passivation et cellule solaire ainsi créée |
CN115274871B (zh) * | 2021-04-30 | 2024-04-02 | 泰州中来光电科技有限公司 | 一种应用于隧穿型太阳能电池上的接触结构、带有该接触结构的太阳能电池及其制造方法 |
CN113921626A (zh) * | 2021-09-30 | 2022-01-11 | 泰州隆基乐叶光伏科技有限公司 | 一种背接触电池的制作方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252488A1 (en) | 2003-04-01 | 2004-12-16 | Innovalight | Light-emitting ceiling tile |
US7279832B2 (en) | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
US7138307B2 (en) * | 2004-08-04 | 2006-11-21 | Intel Corporation | Method to produce highly doped polysilicon thin films |
US7750352B2 (en) | 2004-08-10 | 2010-07-06 | Pinion Technologies, Inc. | Light strips for lighting and backlighting applications |
DE102005040871A1 (de) * | 2005-04-16 | 2006-10-19 | Institut Für Solarenergieforschung Gmbh | Rückkontaktierte Solarzelle und Verfahren zu deren Herstellung |
EP1922746A4 (fr) | 2005-08-11 | 2010-08-11 | Innovalight Inc | Nanoparticules stablement passivees d'un semi-conducteur de groupe iv, procedes et compositions associes |
CN106409970A (zh) * | 2005-12-21 | 2017-02-15 | 太阳能公司 | 背面触点太阳能电池及制造方法 |
US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
FR2906405B1 (fr) * | 2006-09-22 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
US7705237B2 (en) | 2006-11-27 | 2010-04-27 | Sunpower Corporation | Solar cell having silicon nano-particle emitter |
US7776724B2 (en) | 2006-12-07 | 2010-08-17 | Innovalight, Inc. | Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material |
US7718707B2 (en) | 2006-12-21 | 2010-05-18 | Innovalight, Inc. | Method for preparing nanoparticle thin films |
US7572740B2 (en) | 2007-04-04 | 2009-08-11 | Innovalight, Inc. | Methods for optimizing thin film formation with reactive gases |
US7727901B2 (en) | 2007-05-03 | 2010-06-01 | Innovalight, Inc. | Preparation of group IV semiconductor nanoparticle materials and dispersions thereof |
US20090092745A1 (en) | 2007-10-05 | 2009-04-09 | Luca Pavani | Dopant material for manufacturing solar cells |
US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
US8222516B2 (en) * | 2008-02-20 | 2012-07-17 | Sunpower Corporation | Front contact solar cell with formed emitter |
US7704866B2 (en) | 2008-03-18 | 2010-04-27 | Innovalight, Inc. | Methods for forming composite nanoparticle-metal metallization contacts on a substrate |
US7923368B2 (en) * | 2008-04-25 | 2011-04-12 | Innovalight, Inc. | Junction formation on wafer substrates using group IV nanoparticles |
US7851698B2 (en) | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US7951637B2 (en) * | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
US7615393B1 (en) | 2008-10-29 | 2009-11-10 | Innovalight, Inc. | Methods of forming multi-doped junctions on a substrate |
KR101482130B1 (ko) * | 2008-11-21 | 2015-01-15 | 엘지전자 주식회사 | 후면전극 태양전지의 제조방법 및 이를 이용한 후면전극 태양전지 |
US8242354B2 (en) | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
JP2010161317A (ja) * | 2009-01-09 | 2010-07-22 | Tokyo Ohka Kogyo Co Ltd | 拡散剤組成物、不純物拡散層の形成方法、および太陽電池 |
US8138070B2 (en) | 2009-07-02 | 2012-03-20 | Innovalight, Inc. | Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles |
US8492253B2 (en) * | 2010-12-02 | 2013-07-23 | Sunpower Corporation | Method of forming contacts for a back-contact solar cell |
US8802486B2 (en) * | 2011-04-25 | 2014-08-12 | Sunpower Corporation | Method of forming emitters for a back-contact solar cell |
-
2012
- 2012-02-13 US US13/372,235 patent/US8802486B2/en not_active Expired - Fee Related
- 2012-02-15 KR KR1020137030732A patent/KR20140041494A/ko active IP Right Grant
- 2012-02-15 CN CN201280020157.XA patent/CN103493216B/zh not_active Expired - Fee Related
- 2012-02-15 CN CN201610809576.1A patent/CN106887474A/zh active Pending
- 2012-02-15 JP JP2014508344A patent/JP6026508B2/ja not_active Expired - Fee Related
- 2012-02-15 EP EP12776847.1A patent/EP2702614B1/fr not_active Not-in-force
- 2012-02-15 WO PCT/US2012/025264 patent/WO2012148523A1/fr active Application Filing
- 2012-03-23 TW TW101110100A patent/TWI545786B/zh not_active IP Right Cessation
- 2012-03-23 TW TW105117232A patent/TWI588911B/zh not_active IP Right Cessation
-
2014
- 2014-06-11 US US14/302,256 patent/US8912038B2/en not_active Expired - Fee Related
- 2014-11-26 US US14/555,383 patent/US9147795B2/en not_active Expired - Fee Related
-
2016
- 2016-07-07 JP JP2016135400A patent/JP6209251B2/ja not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
None * |
Also Published As
Publication number | Publication date |
---|---|
WO2012148523A1 (fr) | 2012-11-01 |
KR20140041494A (ko) | 2014-04-04 |
CN106887474A (zh) | 2017-06-23 |
JP6209251B2 (ja) | 2017-10-04 |
TWI545786B (zh) | 2016-08-11 |
US20150087100A1 (en) | 2015-03-26 |
JP2016197742A (ja) | 2016-11-24 |
TWI588911B (zh) | 2017-06-21 |
JP2014512701A (ja) | 2014-05-22 |
US8912038B2 (en) | 2014-12-16 |
TW201304160A (zh) | 2013-01-16 |
EP2702614A4 (fr) | 2014-09-24 |
JP6026508B2 (ja) | 2016-11-16 |
EP2702614A1 (fr) | 2014-03-05 |
CN103493216A (zh) | 2014-01-01 |
US20140295608A1 (en) | 2014-10-02 |
US20120266951A1 (en) | 2012-10-25 |
US8802486B2 (en) | 2014-08-12 |
CN103493216B (zh) | 2016-10-12 |
TW201701367A (zh) | 2017-01-01 |
US9147795B2 (en) | 2015-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2702614B1 (fr) | Procédé de formation d'émetteurs pour une cellule solaire à contact arrière | |
EP2647056B1 (fr) | Procédé pour réaliser les contacts destinés à une cellule photovoltaïque à contacts arrière | |
EP2296182A2 (fr) | Cellule solaire et son procédé de fabrication | |
TW201528344A (zh) | 使用離子佈植製造的太陽電池射極區域 | |
WO2014100004A1 (fr) | Cellule solaire à contact arrière intégral à émetteur hybride | |
WO2010033296A1 (fr) | Procédé pour fabriquer une pile solaire à l'aide d'une couche de masquage sans piqûre à motif direct | |
TW202027286A (zh) | 使用離子植入的太陽能電池射極區製造 | |
AU2010347232A1 (en) | Method of fabricating a back-contact solar cell and device thereof | |
KR101160116B1 (ko) | 후면 접합 태양전지의 제조방법 | |
CN115836398A (zh) | 太阳能电池的制造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20131125 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: SMITH, DAVID, D. Inventor name: LI, BO Inventor name: COUSINS, PETER, J. |
|
DAX | Request for extension of the european patent (deleted) | ||
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602012045090 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0031042000 Ipc: H01L0031022400 |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20140821 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 31/18 20060101ALI20140815BHEP Ipc: H01L 31/0224 20060101AFI20140815BHEP Ipc: H01L 31/068 20120101ALI20140815BHEP |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20170425 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20170925 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: LI, BO Inventor name: SMITH, DAVID, D. Inventor name: COUSINS, PETER |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SUNPOWER CORPORATION |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 988883 Country of ref document: AT Kind code of ref document: T Effective date: 20180415 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602012045090 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20180411 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180711 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180711 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180712 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 988883 Country of ref document: AT Kind code of ref document: T Effective date: 20180411 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180813 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602012045090 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
26N | No opposition filed |
Effective date: 20190114 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 602012045090 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20190215 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190215 |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20190228 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190228 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190228 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190215 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190215 Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190903 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190228 Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190228 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190215 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180811 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20120215 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20180411 |