EP2700900A4 - Dispositif de mesure de quantités dynamiques, dispositif semi-conducteur, dispositif de détection de détachement et module - Google Patents

Dispositif de mesure de quantités dynamiques, dispositif semi-conducteur, dispositif de détection de détachement et module

Info

Publication number
EP2700900A4
EP2700900A4 EP11864001.0A EP11864001A EP2700900A4 EP 2700900 A4 EP2700900 A4 EP 2700900A4 EP 11864001 A EP11864001 A EP 11864001A EP 2700900 A4 EP2700900 A4 EP 2700900A4
Authority
EP
European Patent Office
Prior art keywords
module
quantity measuring
detachment detection
dynamic quantity
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11864001.0A
Other languages
German (de)
English (en)
Other versions
EP2700900A1 (fr
EP2700900B1 (fr
Inventor
Hiroyuki Ota
Kisho Ashida
Kentaro Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of EP2700900A1 publication Critical patent/EP2700900A1/fr
Publication of EP2700900A4 publication Critical patent/EP2700900A4/fr
Application granted granted Critical
Publication of EP2700900B1 publication Critical patent/EP2700900B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
    • G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
    • G01M5/0033—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by determining damage, crack or wear
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M5/00—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings
    • G01M5/0083—Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings by measuring variation of impedance, e.g. resistance, capacitance, induction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
EP11864001.0A 2011-04-21 2011-04-21 Dispositif de détection de détachement, dispositif semi-conducteur, dispositif de mesure de quantités mécaniques et module Active EP2700900B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/059860 WO2012144054A1 (fr) 2011-04-21 2011-04-21 Dispositif de mesure de quantités dynamiques, dispositif semi-conducteur, dispositif de détection de détachement et module

Publications (3)

Publication Number Publication Date
EP2700900A1 EP2700900A1 (fr) 2014-02-26
EP2700900A4 true EP2700900A4 (fr) 2014-11-12
EP2700900B1 EP2700900B1 (fr) 2017-07-12

Family

ID=47041203

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11864001.0A Active EP2700900B1 (fr) 2011-04-21 2011-04-21 Dispositif de détection de détachement, dispositif semi-conducteur, dispositif de mesure de quantités mécaniques et module

Country Status (6)

Country Link
US (1) US20140042566A1 (fr)
EP (1) EP2700900B1 (fr)
JP (1) JP5843850B2 (fr)
KR (1) KR20140021606A (fr)
CN (1) CN103477182B (fr)
WO (1) WO2012144054A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9252202B2 (en) * 2011-08-23 2016-02-02 Wafertech, Llc Test structure and method for determining overlay accuracy in semiconductor devices using resistance measurement
JP6090742B2 (ja) * 2013-02-28 2017-03-08 日立オートモティブシステムズ株式会社 圧力検出装置
WO2015190331A1 (fr) * 2014-06-09 2015-12-17 日立オートモティブシステムズ株式会社 Dispositif de mesure de quantité dynamique et capteur de pression utilisant un tel dispositif
EP3358325A4 (fr) * 2015-09-30 2020-11-25 Hitachi Automotive Systems, Ltd. Dispositif de mesure de quantité mécanique et capteur de pression l'utilisant
JP6776909B2 (ja) * 2017-01-23 2020-10-28 株式会社デンソー 車両用衝突センサ及びその取付構造
DE102019129411A1 (de) * 2019-09-12 2021-03-18 Wika Alexander Wiegand Se & Co. Kg Aufnehmerkörper mit einem Messelement und Herstellungsverfahren für einen Aufnehmerkörper
US11885704B2 (en) 2020-07-27 2024-01-30 Precision Biomems Corporation Flexible two-dimensional sheet array of electronic sensor devices
US11650110B2 (en) * 2020-11-04 2023-05-16 Honeywell International Inc. Rosette piezo-resistive gauge circuit for thermally compensated measurement of full stress tensor
JP2023119476A (ja) * 2022-02-16 2023-08-28 Tdk株式会社 膜電極構造および圧力センサ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060207339A1 (en) * 2005-03-18 2006-09-21 Takashi Sumigawa Mechanical-quantity measuring device
US20070228500A1 (en) * 2006-03-29 2007-10-04 Hitachi, Ltd. Mechanical-Quality measuring device
US20080034882A1 (en) * 2006-08-09 2008-02-14 Hiroyuki Ohta Monitoring system for valve device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118374A (en) * 1980-02-22 1981-09-17 Hitachi Ltd Semiconductor strain gauge
JP3969228B2 (ja) * 2002-07-19 2007-09-05 松下電工株式会社 機械的変形量検出センサ及びそれを用いた加速度センサ、圧力センサ
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
JP4949733B2 (ja) * 2006-05-11 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置
KR101151125B1 (ko) * 2007-08-27 2012-06-01 가부시키가이샤 히타치세이사쿠쇼 반도체 왜곡 센서
JP2010205889A (ja) * 2009-03-03 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060207339A1 (en) * 2005-03-18 2006-09-21 Takashi Sumigawa Mechanical-quantity measuring device
US20070228500A1 (en) * 2006-03-29 2007-10-04 Hitachi, Ltd. Mechanical-Quality measuring device
US20080034882A1 (en) * 2006-08-09 2008-02-14 Hiroyuki Ohta Monitoring system for valve device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012144054A1 *

Also Published As

Publication number Publication date
EP2700900A1 (fr) 2014-02-26
JP5843850B2 (ja) 2016-01-13
JPWO2012144054A1 (ja) 2014-07-28
KR20140021606A (ko) 2014-02-20
CN103477182A (zh) 2013-12-25
WO2012144054A1 (fr) 2012-10-26
EP2700900B1 (fr) 2017-07-12
US20140042566A1 (en) 2014-02-13
CN103477182B (zh) 2016-10-05

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