EP2693495A1 - Unité de cellules solaires - Google Patents
Unité de cellules solaires Download PDFInfo
- Publication number
- EP2693495A1 EP2693495A1 EP12005554.6A EP12005554A EP2693495A1 EP 2693495 A1 EP2693495 A1 EP 2693495A1 EP 12005554 A EP12005554 A EP 12005554A EP 2693495 A1 EP2693495 A1 EP 2693495A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- solar cell
- optical element
- secondary optical
- cell unit
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 66
- 239000012790 adhesive layer Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 229920000642 polymer Polymers 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims abstract description 33
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 8
- 239000002318 adhesion promoter Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000004382 potting Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- -1 quartz glass compound Chemical class 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 description 10
- 239000002184 metal Substances 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
- H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the invention relates to a solar cell unit according to the preamble of patent claim 1.
- a solar cell module in which a semiconductor body designed as a solar cell is arranged on a carrier.
- a frame is arranged around the semiconductor body on four sides and closed with a transparent lid. Subsequently, the remaining space is filled with a transparent potting compound and attached an optical element.
- a solar cell unit which has a plurality of individual solar cells on a support.
- an optical element which is also referred to as a secondary optical element "SOE"
- the optical element directs the light of the sun, which is focused by a Fresnel lens, onto the surface of the solar cell.
- the object of the invention is to provide a device which further develops the prior art.
- a solar cell unit with a semiconductor body designed as a solar cell wherein the semiconductor body has a front side with a first electrical connection and a rear side with a second electrical connection and a side surface formed between the front side and the rear side, and with a carrier with one The upper side and a lower side, wherein the carrier has on the upper side a first conductor track area formed as part of the carrier and the first electrical connection is electrically connected to the first conductor track area, and the carrier has on the upper side a second conductor track area formed as part of the carrier and the second electrical connection is electrically connected to the second interconnect region, and having a secondary optical element which has a bottom surface and leads light to the front side of the semiconductor body and the optical element t has a flat surface on the entire underside and a part of the planar surface is arranged above the front side of the semiconductor body and a part of the underside of the optical element has a first adhesive layer bonded to the underside and a polymer adhesive layer at least
- the solar cell is preferably a III-V semiconductor solar cell based on GaAs, and the solar cell is most preferably designed as a stacked multiple solar cell and has efficiencies above 30%, inter alia, by using UV light components.
- Such solar cell units are used, inter alia because of the higher compared to the silicon solar cells manufacturing costs, in so-called CPV systems.
- CPV systems sunlight is bundled by factors above 50.
- the light bundled by means of a primary optical concentrator or element is directed to a secondary optical element.
- the Primary element is located above the secondary optical element. From the secondary optical element, the light is passed through the polymer adhesive layer to the front of the solar cell.
- the polymer adhesive layer In order to keep the optical losses low, the polymer adhesive layer must be formed in addition to a high UV resistance in the entire spectral range to be exploited particularly transparent. In addition, high temperatures of up to 120 ° C on the front of the solar cell are achieved by the high concentration of sunlight, d. H.
- the polymer adhesive layer must be particularly resistant to temperature and aging. It is understood that the primer layer has a different chemical composition compared to the polymer adhesive layer. Investigations have shown that already a formation of the polymer adhesive layer in the central region on the underside of the optical element and thereby also the front produces a frictional connection.
- the secondary optical element has a planar surface and can thereby be produced simply and inexpensively.
- a polymer adhesive layer which preferably comprises a silicone compound is formed between the underside of the secondary optical element and the top of the carrier or the front of the solar cell, can be produced without further connection means a frictional connection in a simple and cost-effective manner.
- the polymer adhesive layer is a small thickness, preferably below 2 mm, most preferably formed below 0.5 mm. Studies have shown that the adhesion between the polymer adhesive layer and the flat underside of the secondary optical element with the formation of a thin adhesion promoter layer substantially increase, thereby increasing the reliability.
- the primer layer transparent and very thin, preferably the thickness is less than 0.5 mm, most preferably less than 0.05 mm.
- the polymer adhesive layer is sealing Has properties and the top of the carrier and the semiconductor body and in particular the side surfaces of the semiconductor body are reliably protected by the polymer adhesive layer from environmental influences. Further investigations have shown that an additional sealing layer, which in particular encloses the outer edge of the sheet-shaped polymer adhesive layer, is unnecessary. As a result, the number of manufacturing steps for producing the solar cell unit can be further reduced.
- An advantage of the pillow-shaped formation of the polymer adhesive layer below the planar surface is that there is no limit to lateral expansion of the polymer adhesive layer.
- Expansion or shrinkage of the polymer adhesive layer both perpendicular to the direction of the top of the carrier and perpendicular to the direction due to a temperature change and / or humidity change is thereby readily possible. This can reduce the likelihood of delamination between the polymer adhesive layer and the carrier.
- a second adhesion promoter layer is formed between the polymer adhesive layer and the front side of the semiconductor body, and the second adhesion promoter layer is adhesively bonded to the front side of the semiconductor body.
- the second adhesion promoter layer is also formed on the upper side of the carrier.
- the first adhesion promoter layer is adhesively bonded to the entire underside of the secondary optical element.
- the polymer adhesive layer is formed as potting compound on the entire underside, wherein the front side of the semiconductor body and the side surfaces of the semiconductor body are positively covered.
- the polymer adhesive layer is preferably formed as a cushion between the bottom of the secondary optical element and the top of the carrier.
- the polymer adhesive layer terminates flush with the edge at the bottom of the secondary optical element.
- the projecting Polymer adhesive layer laterally on the underside of the secondary optical element and preferably covers a part of the adjoining the underside of the secondary optical element side surface of the secondary optical element.
- a protective diode preferably designed as a bypass diode, is arranged on the upper side of the carrier and has an electrical connection with the first printed conductor region and the second printed conductor region, ie. H. the protective diode is connected to the first printed conductor region and the second printed conductor region.
- the solar cell also has a diode characteristic and the protective diode is connected in anti-parallel to the solar cell.
- the protruding from the top of the carrier surfaces of the protective diode are preferably covered by the polymer adhesive layer.
- the carrier has at least in one direction, preferably in both directions formed within the upper side plane of the carrier, a greater lateral extent than the secondary optical element.
- the secondary optical element is in the form of a half-ellipsoid and preferably has a circumferential heel-shaped collar.
- the secondary optical element is formed in the shape of a truncated pyramid or funnel.
- An advantage of the inorganic material or the quartz glass compound is the very good UV transparency and the extraordinary high temperature stability and a large mechanical and chemical Resistance compared to an organic or plastic compound.
- a metal layer is formed as part of the carrier on the underside of the carrier, wherein the metal layer is preferably not formed in a peripheral edge region directly on the edge of the carrier.
- the picture of the FIG. 1 shows a solar cell unit 10 having a semiconductor body 20 formed as a solar cell, a secondary optical element 22 in the form of a half ellipsoid with a circumferential collar-shaped bead 23.
- the secondary optical element 22 has a bottom 24 and leads the light incident on the secondary optical element 22 on the front side of the semiconductor body 20.
- the optical element 22 has a flat surface on the entire underside 24, wherein a part of the planar surface is arranged above a front side of the semiconductor body 20. On the entire bottom 24 is a cohesively connected to the bottom 24 first adhesive layer 25 is formed.
- the carrier 30 has on the underside a metal layer 31 over the entire surface, except for a narrow edge region.
- the carrier 30 also has a larger lateral extent than the secondary optical element 22.
- the semiconductor body 20 has a front side with a first electrical connection and a rear side with a second electrical connection and between the front side and the rear side Side surface 28 on.
- the first electrical connection is electrically connected to the first interconnect region 40 by means of a plurality of welded connectors 26.
- the semiconductor body 20 is arranged with the rear side on an upper side of a carrier 30.
- a first formed as part of the carrier conductor track area 40 is formed.
- the first interconnect region 40 is connected to the first electrical connection.
- the carrier 30 has on the upper side a second conductor track region 45 formed as part of the carrier 30.
- the second interconnect region 45 and the second electrical connection are electrically interconnected by soldering the rear side of the semiconductor body 20 on the second interconnect region 45.
- two protective diodes 30 are arranged on the upper side of the carrier.
- the protective diodes are designed as bypass diodes 47. It is understood that with a different dimensioning of the protective dowels, a single protective diode is sufficient
- a second adhesion promoter layer 50 is formed and the second adhesion promoter layer 50 is integrally bonded to the front side of the semiconductor body.
- the second adhesion promoter layer 50 covers at least a part of the top side of the carrier 30.
- a silicone layer 60 is formed as a polymer adhesive layer. The silicone layer 60 fills in the form of a potting compound the space between the bottom 24 of the secondary optical element 22 and the carrier 30 form fit completely and establishes a frictional connection between the secondary optical element 22 and the carrier 30 ago.
- the silicone layer 60 covers both the side surfaces of the semiconductor body 20 and the surfaces of the two protective diodes protruding from the top side of the carrier 30. It is understood that the first adhesion promoter layer 25 and / or the second adhesion promoter layer 50 have a different chemical composition than the polymer adhesive layer or the silicone layer 60. In an alternative embodiment, shown by dashed lines 66 the silicone layer 60 projects laterally on the underside 24 of the secondary optical element 22 to different extents.
- FIG. 2 shows a plan view of the embodiment of the FIG. 1 .
- the lateral extent of the secondary optical element 22 including the circumferential collar 23 is smaller than the extent of the carrier 30.
- the two welding connectors 26 with which the front side of the semiconductor body 20 are electrically connected are shown as dashed lines.
- FIG. 3 shows a further cross section along the line II to the embodiment of the FIG. 1 .
- the polymer adhesive layer depending on the lateral extent represented by the dashed lines 66, is formed up to the edge of the carrier 20.
- FIG. 11 is a top plan view of another embodiment of a secondary optical element having an ellipsoidal shape and one compared to the secondary optical element of FIG. 1 smaller heel-shaped collar 124.
- the picture of the FIG. 4b shows a cross-sectional view of the embodiment of FIG. 4a and the Figure 4c a plan view from below of the secondary optical element of Fig. 4a , It can be seen in the plan view from below that the bottom 124 is planar.
- FIG. 12 is a top plan view of another embodiment of a secondary optical element 222 having an ellipsoidal shape but without a shouldered collar.
- FIG. 5b shows a cross-sectional view of the embodiment of FIG. 5a and the FIG. 5c a bottom plan view of the secondary optical element 222 of Fig. 5a , It can be seen in the plan view from below that the bottom 224 is again formed plan.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12005554.6A EP2693495B1 (fr) | 2012-07-31 | 2012-07-31 | Unité de cellules solaires |
ES12005554T ES2835739T3 (es) | 2012-07-31 | 2012-07-31 | Unidad de célula solar |
PT120055546T PT2693495T (pt) | 2012-07-31 | 2012-07-31 | Unidade de célula solar |
CN201380040564.1A CN104521008B (zh) | 2012-07-31 | 2013-07-22 | 太阳能电池单元 |
PCT/EP2013/002168 WO2014019652A1 (fr) | 2012-07-31 | 2013-07-22 | Unité photopile |
US14/611,543 US9899548B2 (en) | 2012-07-31 | 2015-02-02 | Solar cell unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12005554.6A EP2693495B1 (fr) | 2012-07-31 | 2012-07-31 | Unité de cellules solaires |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2693495A1 true EP2693495A1 (fr) | 2014-02-05 |
EP2693495B1 EP2693495B1 (fr) | 2020-09-09 |
Family
ID=46796210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12005554.6A Active EP2693495B1 (fr) | 2012-07-31 | 2012-07-31 | Unité de cellules solaires |
Country Status (6)
Country | Link |
---|---|
US (1) | US9899548B2 (fr) |
EP (1) | EP2693495B1 (fr) |
CN (1) | CN104521008B (fr) |
ES (1) | ES2835739T3 (fr) |
PT (1) | PT2693495T (fr) |
WO (1) | WO2014019652A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2950353A1 (fr) * | 2014-05-30 | 2015-12-02 | AZUR SPACE Solar Power GmbH | Unité de cellules solaires |
DE102015011295A1 (de) | 2015-09-02 | 2017-03-02 | Azur Space Solar Power Gmbh | Photovoltaische Anordnung aus einem sekundärem optischen Element und einem Halbleiterkörper |
DE102016011321A1 (de) | 2016-09-21 | 2018-03-22 | Azur Space Solar Power Gmbh | Solarzellenmodul |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016003486B4 (de) | 2016-03-24 | 2021-04-22 | Azur Space Solar Power Gmbh | Solarzelleneinheit und Solarzellenmodul |
DE102016003487B4 (de) | 2016-03-24 | 2020-03-12 | Azur Space Solar Power Gmbh | Solarzelleneinheit und Solarzellenmodul |
DE102016011320B3 (de) * | 2016-09-21 | 2017-08-24 | Azur Space Solar Power Gmbh | Linse, Solarzelleneinheit und Fügeverfahren für eine Solarzelleneinheit |
DE102016012644A1 (de) * | 2016-10-24 | 2018-04-26 | Azur Space Solar Power Gmbh | Nutzen von Solarzelleneinheiten und Herstellungsverfahren |
DE102016012645A1 (de) | 2016-10-24 | 2018-04-26 | Azur Space Solar Power Gmbh | Halbzeuganordnung auf einer Folie und ein Herstellungsverfahren für eine Halbzeuganordnung auf einer Folie |
DE102018001181B3 (de) * | 2018-02-15 | 2019-07-11 | Azur Space Solar Power Gmbh | Sonnenstandssensor |
DE102018002404A1 (de) * | 2018-03-23 | 2019-09-26 | Azur Space Solar Power Gmbh | Sonnennachführeinheit |
DE102018003272B3 (de) | 2018-04-23 | 2019-04-25 | Azur Space Solar Power Gmbh | Aufnahmevorrichtung für einen Solarzelleneinheiten-Nutzen und Herstellungsverfahren für einen Solarzelleneinheiten-Nutzen |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1953825A2 (fr) | 2002-09-04 | 2008-08-06 | Cree, Inc. | Ensemble de puces photoémettrices de puissance à montage en surface |
US20090120500A1 (en) * | 2007-11-14 | 2009-05-14 | Eric Prather | Solar cell package for solar concentrator |
EP2073279A1 (fr) | 2006-09-28 | 2009-06-24 | Sharp Kabushiki Kaisha | Cellule solaire, module de génération de puissance photovoltaïque à concentration de lumière, unité de génération de puissance photovoltaïque à concentration de lumière, procédé de fabrication de cellule solaire et appareil de fabrication de cellule solaire |
DE102009006286A1 (de) | 2008-02-11 | 2009-10-01 | Emcore Solar Power, Inc., Albuquerque | Konzentrierte photovoltaische Systemmodule unter Verwendung III-V-Halbleitersolarzellen |
EP2278631A1 (fr) * | 2009-07-20 | 2011-01-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bloc de cellules solaires et agencement de cellules solaires |
EP2312646A1 (fr) * | 2008-06-23 | 2011-04-20 | Sharp Kabushiki Kaisha | Cellule solaire, module photovoltaïque de type à photoconcentration et procédé de fabrication de cellule solaire |
DE102011084054A1 (de) * | 2010-12-07 | 2012-06-14 | Evonik Degussa Gmbh | Photovoltaik(PV)-PSA-Verbund und Verwendung zur Herstellung von PV-Modulen durch Flüssigeinbettung |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8759138B2 (en) * | 2008-02-11 | 2014-06-24 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
JP4618451B2 (ja) * | 2008-02-19 | 2011-01-26 | 信越化学工業株式会社 | トリアジンチオール基及びアルケニル基を有するオルガノポリシロキサン及びその製造方法、並びに当該オルガノポリシロキサンを含有する接着用プライマー組成物 |
US20110240096A1 (en) * | 2010-02-01 | 2011-10-06 | Solaria Corporation | Large area concentrator lens structure and method configured for stress relief |
WO2013179287A1 (fr) * | 2012-05-29 | 2013-12-05 | Essence Solar Solutions Ltd. | Ensemble module photovoltaïque |
-
2012
- 2012-07-31 ES ES12005554T patent/ES2835739T3/es active Active
- 2012-07-31 PT PT120055546T patent/PT2693495T/pt unknown
- 2012-07-31 EP EP12005554.6A patent/EP2693495B1/fr active Active
-
2013
- 2013-07-22 WO PCT/EP2013/002168 patent/WO2014019652A1/fr active Application Filing
- 2013-07-22 CN CN201380040564.1A patent/CN104521008B/zh active Active
-
2015
- 2015-02-02 US US14/611,543 patent/US9899548B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1953825A2 (fr) | 2002-09-04 | 2008-08-06 | Cree, Inc. | Ensemble de puces photoémettrices de puissance à montage en surface |
EP2073279A1 (fr) | 2006-09-28 | 2009-06-24 | Sharp Kabushiki Kaisha | Cellule solaire, module de génération de puissance photovoltaïque à concentration de lumière, unité de génération de puissance photovoltaïque à concentration de lumière, procédé de fabrication de cellule solaire et appareil de fabrication de cellule solaire |
US20090120500A1 (en) * | 2007-11-14 | 2009-05-14 | Eric Prather | Solar cell package for solar concentrator |
DE102009006286A1 (de) | 2008-02-11 | 2009-10-01 | Emcore Solar Power, Inc., Albuquerque | Konzentrierte photovoltaische Systemmodule unter Verwendung III-V-Halbleitersolarzellen |
EP2312646A1 (fr) * | 2008-06-23 | 2011-04-20 | Sharp Kabushiki Kaisha | Cellule solaire, module photovoltaïque de type à photoconcentration et procédé de fabrication de cellule solaire |
EP2278631A1 (fr) * | 2009-07-20 | 2011-01-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bloc de cellules solaires et agencement de cellules solaires |
DE102011084054A1 (de) * | 2010-12-07 | 2012-06-14 | Evonik Degussa Gmbh | Photovoltaik(PV)-PSA-Verbund und Verwendung zur Herstellung von PV-Modulen durch Flüssigeinbettung |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2950353A1 (fr) * | 2014-05-30 | 2015-12-02 | AZUR SPACE Solar Power GmbH | Unité de cellules solaires |
US10211358B2 (en) | 2014-05-30 | 2019-02-19 | Azur Space Solar Power Gmbh | Solar cell unit |
DE102015011295A1 (de) | 2015-09-02 | 2017-03-02 | Azur Space Solar Power Gmbh | Photovoltaische Anordnung aus einem sekundärem optischen Element und einem Halbleiterkörper |
DE102015011295B4 (de) * | 2015-09-02 | 2020-03-12 | Azur Space Solar Power Gmbh | Photovoltaische Anordnung aus einem sekundärem optischen Element und einem Halbleiterkörper |
DE102016011321A1 (de) | 2016-09-21 | 2018-03-22 | Azur Space Solar Power Gmbh | Solarzellenmodul |
Also Published As
Publication number | Publication date |
---|---|
US9899548B2 (en) | 2018-02-20 |
CN104521008A (zh) | 2015-04-15 |
ES2835739T3 (es) | 2021-06-23 |
CN104521008B (zh) | 2017-04-12 |
PT2693495T (pt) | 2020-11-17 |
EP2693495B1 (fr) | 2020-09-09 |
US20150144189A1 (en) | 2015-05-28 |
WO2014019652A1 (fr) | 2014-02-06 |
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