EP2682712A4 - DEVICE AND METHOD FOR ACQUIRING FILM SHAPE - Google Patents

DEVICE AND METHOD FOR ACQUIRING FILM SHAPE

Info

Publication number
EP2682712A4
EP2682712A4 EP11859710.3A EP11859710A EP2682712A4 EP 2682712 A4 EP2682712 A4 EP 2682712A4 EP 11859710 A EP11859710 A EP 11859710A EP 2682712 A4 EP2682712 A4 EP 2682712A4
Authority
EP
European Patent Office
Prior art keywords
film
shape acquisition
acquisition device
acquisition method
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11859710.3A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2682712A1 (en
Inventor
Hiroyuki Fujiwara
Shinji Yamaguchi
Yoshio Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Publication of EP2682712A1 publication Critical patent/EP2682712A1/en
Publication of EP2682712A4 publication Critical patent/EP2682712A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Photovoltaic Devices (AREA)
EP11859710.3A 2011-03-03 2011-09-28 DEVICE AND METHOD FOR ACQUIRING FILM SHAPE Withdrawn EP2682712A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011045941A JP2012181166A (ja) 2011-03-03 2011-03-03 膜形状取得装置および膜形状取得方法
PCT/JP2011/072220 WO2012117603A1 (ja) 2011-03-03 2011-09-28 膜形状取得装置および膜形状取得方法

Publications (2)

Publication Number Publication Date
EP2682712A1 EP2682712A1 (en) 2014-01-08
EP2682712A4 true EP2682712A4 (en) 2014-09-10

Family

ID=46757553

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11859710.3A Withdrawn EP2682712A4 (en) 2011-03-03 2011-09-28 DEVICE AND METHOD FOR ACQUIRING FILM SHAPE

Country Status (4)

Country Link
EP (1) EP2682712A4 (ja)
JP (1) JP2012181166A (ja)
TW (1) TWI457536B (ja)
WO (1) WO2012117603A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090135416A1 (en) * 2001-12-19 2009-05-28 Kla-Tencor Technologies Corporation Parametric Profiling Using Optical Spectroscopic Systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07231023A (ja) * 1994-02-17 1995-08-29 Fujitsu Ltd 薄膜の形状計測方法
JP3644863B2 (ja) * 2000-01-24 2005-05-11 沖電気工業株式会社 膜厚分布測定方法
US6704661B1 (en) * 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
JP2004157060A (ja) 2002-11-08 2004-06-03 Fujitsu Ltd 多層薄膜体の界面構造の計測方法
US20070228593A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Residual Layer Thickness Measurement and Correction
WO2006069469A1 (en) * 2004-12-27 2006-07-06 Sae Magnetics (H.K.) Ltd. Method of nano thin film thickness measurement by auger electron spectrscopy
JP5473265B2 (ja) * 2008-07-09 2014-04-16 キヤノン株式会社 多層構造計測方法および多層構造計測装置
JP5264374B2 (ja) * 2008-09-02 2013-08-14 東京エレクトロン株式会社 パターン形状検査方法及び半導体装置の製造方法
JP5297840B2 (ja) * 2009-03-03 2013-09-25 シャープ株式会社 積層体、薄膜光電変換素子、集積型薄膜太陽電池およびそれらの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090135416A1 (en) * 2001-12-19 2009-05-28 Kla-Tencor Technologies Corporation Parametric Profiling Using Optical Spectroscopic Systems

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHANDRA SAHOO K ET AL: "Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 57, no. 10, 1 October 2010 (2010-10-01), pages 2427 - 2433, XP011316021, ISSN: 0018-9383 *
R.W. COLLINS ET AL.: "Real time characterization of non-ideal surfaces and thin film growth by advanced ellipsometric spectroscopies", MAT. RES. SOC. SYMP. PROC., vol. 569, 1 January 1999 (1999-01-01), pages 43 - 57, XP002727926 *
SAENGER M F ET AL: "Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 518, no. 7, 31 January 2010 (2010-01-31), pages 1830 - 1834, XP026854317, ISSN: 0040-6090, [retrieved on 20090919] *
See also references of WO2012117603A1 *

Also Published As

Publication number Publication date
TW201237362A (en) 2012-09-16
TWI457536B (zh) 2014-10-21
WO2012117603A1 (ja) 2012-09-07
JP2012181166A (ja) 2012-09-20
EP2682712A1 (en) 2014-01-08

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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A4 Supplementary search report drawn up and despatched

Effective date: 20140813

RIC1 Information provided on ipc code assigned before grant

Ipc: G01N 21/21 20060101ALI20140805BHEP

Ipc: G01B 11/24 20060101AFI20140805BHEP

Ipc: H01L 31/04 20140101ALI20140805BHEP

Ipc: G01N 21/956 20060101ALI20140805BHEP

Ipc: G01B 11/06 20060101ALI20140805BHEP

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SCREEN HOLDINGS CO., LTD.

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SUGIMOTO, YOSHIO

Inventor name: FUJIWARA, HIROYUKI

Inventor name: YAMAGUCHI, SHINJI

STAA Information on the status of an ep patent application or granted ep patent

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Effective date: 20150310