EP2606511A1 - Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips - Google Patents
Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchipsInfo
- Publication number
- EP2606511A1 EP2606511A1 EP11743810.1A EP11743810A EP2606511A1 EP 2606511 A1 EP2606511 A1 EP 2606511A1 EP 11743810 A EP11743810 A EP 11743810A EP 2606511 A1 EP2606511 A1 EP 2606511A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor
- semiconductor layer
- layer
- semiconductor chip
- emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 237
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000001514 detection method Methods 0.000 claims abstract description 93
- 230000005855 radiation Effects 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 155
- 239000000463 material Substances 0.000 description 17
- 238000009413 insulation Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Definitions
- a photodiode can additionally be used in an arrangement of light-emitting diodes whose signal is supplied to a control for the operating parameters of the light-emitting diodes.
- an optoelectronic semiconductor chip has a carrier and one on the carrier
- Photodiode for monitoring can be dispensed with.
- the detection region and the emission region can emerge from the same semiconductor layer sequence. Depositing additional layers is not required for the formation of the detection area.
- the active area of the emission area and the active area of the detection area may be the same
- the emission region and the detection region are preferably in the lateral direction, that is, along one
- the semiconductor body is materially connected to the carrier.
- the carrier is in particular of a growth substrate for the
- the additional contact covers the detection area in a plan view of the
- Sub-layer is divided by means of a recess in at least two electrically isolated from each other subregions.
- a first connection layer is formed on the semiconductor layer sequence, wherein the first connection layer in the
- Semiconductor layer sequence and a carrier is formed.
- a plurality of emission regions and a plurality of detection regions are formed from the semiconductor layer sequence, wherein the emission regions each have at least one recess and the detection regions are each provided with an additional contact, which is electrically isolated from the emission regions.
- the composite is singulated into a plurality of semiconductor chips, wherein each semiconductor chip has at least one emission region and at least one detection region.
- a semiconductor chip with the growth substrate removed is also referred to as a thin-film semiconductor chip.
- FIGS. 6A to 6E show an exemplary embodiment of FIG.
- Terminal layer 32 is an insulation layer 71
- Detection area impinges, in particular by radiation which is generated in the active region 23 of the emission region and by a side surface 231 of the emission region
- the signal generated in the detection area 24 is therefore particularly suitable for monitoring or regulating the Emission range 23.
- a semiconductor chip in a semiconductor device with one or more such semiconductor chips 1 so no additional external photodiode is required.
- Gap 26 are completely filled with the encapsulating material. The radiation path between the
- the area of the detection area 24 is preferably small compared to the area of the emission area 23.
- the area of the detection area is preferably at most 20%, particularly preferably at most 10% of the area of the semiconductor chip 1. The smaller the area ratio of the detection area, the lower are the losses due to the integration of one detection area than for the emission area 24
- II-IV semiconductor materials are for generating radiation in the ultraviolet - visible above the (In x Ga y Al x y N)
- Terminal layer 32 preferably includes one each
- the first contact 41 and the second contact 42 may be identical.
- the first insulating layer 71 may be, for example, an oxide, such as silicon oxide or titanium oxide, a nitride, for example
- Silicon nitride or an oxynitride, such as silicon oxynitride contain or consist of such a material.
- first contact 41 and the second contact 42 are on the same side of the carrier 5
- the first semiconductor layer 21 may be used for the first semiconductor layer 21 .
- Terminal layer 32 with the second semiconductor layer in the detection area 24 is a second insulation layer 72 between the second terminal layer and the
- the electrical insulation can also be achieved in that the detection region 24 is arranged completely in top view of the semiconductor chip 1 within the detection window 320. On the second insulation layer can be dispensed with.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010034665A DE102010034665A1 (de) | 2010-08-18 | 2010-08-18 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| PCT/EP2011/063715 WO2012022657A1 (de) | 2010-08-18 | 2011-08-09 | Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2606511A1 true EP2606511A1 (de) | 2013-06-26 |
Family
ID=44630317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP11743810.1A Withdrawn EP2606511A1 (de) | 2010-08-18 | 2011-08-09 | Optoelektronischer halbleiterchip und verfahren zur herstellung von optoelektronischen halbleiterchips |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8878227B2 (zh) |
| EP (1) | EP2606511A1 (zh) |
| JP (1) | JP6104158B2 (zh) |
| KR (1) | KR101762820B1 (zh) |
| CN (1) | CN103069568B (zh) |
| DE (1) | DE102010034665A1 (zh) |
| TW (1) | TWI505493B (zh) |
| WO (1) | WO2012022657A1 (zh) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010034665A1 (de) | 2010-08-18 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| JP2014022401A (ja) * | 2012-07-12 | 2014-02-03 | Toshiba Corp | 窒化物半導体発光素子 |
| JP5983125B2 (ja) * | 2012-07-18 | 2016-08-31 | 日亜化学工業株式会社 | 半導体発光素子の製造方法 |
| DE102012110909A1 (de) * | 2012-11-13 | 2014-05-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zum Betreiben eines Halbleiterchips |
| KR20140098564A (ko) * | 2013-01-31 | 2014-08-08 | 삼성전자주식회사 | 반도체 발광소자 |
| DE102013103409A1 (de) | 2013-04-05 | 2014-10-09 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Modul |
| TWI661578B (zh) | 2013-06-20 | 2019-06-01 | 晶元光電股份有限公司 | 發光裝置及發光陣列 |
| CN104934510A (zh) * | 2014-03-20 | 2015-09-23 | 山东华光光电子有限公司 | 一种无顶电极遮挡的AlGaInP发光二极管结构 |
| FR3031238B1 (fr) * | 2014-12-30 | 2016-12-30 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
| DE102015107526A1 (de) | 2015-05-13 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Modul |
| DE102015108056A1 (de) * | 2015-05-21 | 2016-11-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| FR3046298B1 (fr) * | 2015-12-23 | 2018-01-26 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique d’emission de lumiere |
| TWI617056B (zh) * | 2016-10-28 | 2018-03-01 | 隆達電子股份有限公司 | 發光二極體晶片 |
| US10205064B2 (en) * | 2016-12-22 | 2019-02-12 | Lumileds Llc | Light emitting diodes with sensor segment for operational feedback |
| JP2020503679A (ja) | 2016-12-22 | 2020-01-30 | ルミレッズ リミテッド ライアビリティ カンパニー | 動作フィードバックのためのセンサセグメントを備えた発光ダイオード |
| AT16541U1 (de) * | 2017-03-22 | 2019-12-15 | Zumtobel Lighting Gmbh | Lichtemittierende Anordnung mit lichtemittierendem Halbleiterelement |
| JP6986697B2 (ja) * | 2017-06-28 | 2021-12-22 | パナソニックＩｐマネジメント株式会社 | 紫外線発光素子 |
| DE102017123755B4 (de) * | 2017-10-12 | 2020-12-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Laserdiodenbarrens und Laserdiodenbarren |
| EP3537119B1 (de) * | 2018-03-06 | 2022-09-28 | Vorwerk & Co. Interholding GmbH | System mit einem speisenzubereitungsgerät und einem spektrometer |
| JP6909983B2 (ja) * | 2018-11-29 | 2021-07-28 | 日亜化学工業株式会社 | 発光素子 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS58204574A (ja) | 1982-05-24 | 1983-11-29 | Toshiba Corp | 複合型光半導体装置 |
| JPH03230571A (ja) * | 1990-02-06 | 1991-10-14 | Ricoh Co Ltd | 高密度光プリンター光源 |
| JPH0715030A (ja) | 1993-06-07 | 1995-01-17 | Motorola Inc | 線形集積光結合素子およびその製造方法 |
| JP2002353144A (ja) * | 2001-05-23 | 2002-12-06 | Ricoh Co Ltd | ｐ型ＩＩＩ族窒化物半導体およびその作製方法および半導体装置 |
| JP4697397B2 (ja) | 2005-02-16 | 2011-06-08 | サンケン電気株式会社 | 複合半導体装置 |
| DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| US7888688B2 (en) * | 2008-04-29 | 2011-02-15 | Bridgelux, Inc. | Thermal management for LED |
| US20100006873A1 (en) * | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
| EP2357679B1 (en) | 2008-11-14 | 2018-08-29 | Samsung Electronics Co., Ltd. | Vertical/horizontal light-emitting diode for semiconductor |
| DE102009006177A1 (de) | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| DE102009006250A1 (de) * | 2009-01-27 | 2009-10-01 | Daimler Ag | Elektrooptisches Leuchtelement und Verfahren zur Überwachung desselben |
| DE102010034665A1 (de) | 2010-08-18 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
-
2010
- 2010-08-18 DE DE102010034665A patent/DE102010034665A1/de active Pending
-
2011
- 2011-08-08 TW TW100128127A patent/TWI505493B/zh active
- 2011-08-09 EP EP11743810.1A patent/EP2606511A1/de not_active Withdrawn
- 2011-08-09 JP JP2013525231A patent/JP6104158B2/ja active Active
- 2011-08-09 US US13/817,210 patent/US8878227B2/en active Active
- 2011-08-09 WO PCT/EP2011/063715 patent/WO2012022657A1/de active Application Filing
- 2011-08-09 CN CN201180040000.9A patent/CN103069568B/zh active Active
- 2011-08-09 KR KR1020137006678A patent/KR101762820B1/ko active IP Right Grant
Non-Patent Citations (1)
| Title |
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| See references of WO2012022657A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130207156A1 (en) | 2013-08-15 |
| KR20130064786A (ko) | 2013-06-18 |
| CN103069568B (zh) | 2016-10-26 |
| DE102010034665A1 (de) | 2012-02-23 |
| JP2013535850A (ja) | 2013-09-12 |
| JP6104158B2 (ja) | 2017-03-29 |
| CN103069568A (zh) | 2013-04-24 |
| KR101762820B1 (ko) | 2017-08-04 |
| TWI505493B (zh) | 2015-10-21 |
| WO2012022657A1 (de) | 2012-02-23 |
| US8878227B2 (en) | 2014-11-04 |
| TW201212261A (en) | 2012-03-16 |
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