EP2591550A2 - Circuit de protection contre les inversions de polarité - Google Patents

Circuit de protection contre les inversions de polarité

Info

Publication number
EP2591550A2
EP2591550A2 EP11818916.6A EP11818916A EP2591550A2 EP 2591550 A2 EP2591550 A2 EP 2591550A2 EP 11818916 A EP11818916 A EP 11818916A EP 2591550 A2 EP2591550 A2 EP 2591550A2
Authority
EP
European Patent Office
Prior art keywords
mosfet
voltage
diode
bipolar transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11818916.6A
Other languages
German (de)
English (en)
Inventor
Michael Gueltig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INIT INNOVATIVE INFORMATIKANWENDUNGEN IN TRANSPORT
Original Assignee
INIT Innovative Informatikanwendungen in Transport Verkehrs und Leitsystemen GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INIT Innovative Informatikanwendungen in Transport Verkehrs und Leitsystemen GmbH filed Critical INIT Innovative Informatikanwendungen in Transport Verkehrs und Leitsystemen GmbH
Publication of EP2591550A2 publication Critical patent/EP2591550A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H83/00—Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current
    • H01H83/08—Protective switches, e.g. circuit-breaking switches, or protective relays operated by abnormal electrical conditions otherwise than solely by excess current operated by reversal of dc
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0034—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using reverse polarity correcting or protecting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K2017/307—Modifications for providing a predetermined threshold before switching circuits simulating a diode, e.g. threshold zero

Definitions

  • the invention relates to a circuit for protecting an electrical consumer against reverse polarity using a MOSFET (metal oxide semiconductor field effect transistor), wherein the circuit is connected on the input side to a power supply and the output side to the consumer and wherein the source terminal of the MOSFET with the power supply and the Drain terminal of the MOSFET is connected to the consumer.
  • MOSFET metal oxide semiconductor field effect transistor
  • a diode in the input circuit also has the distinct advantage that it unfolds a buffer effect together with the capacitors in the device. For example, if the input voltage suddenly collapses during a starting operation in a vehicle, the capacitors with the charge stored there can maintain the functions of the apparatus for a certain time.
  • the diode prevents the charge in the capacitors from discharging in the direction of the power supply. For example, in a vehicle, the discharge would be via external loads such as the starter. The diode thus allows a certain support effect.
  • a decisive disadvantage of diodes is that they have a voltage loss of approximately 0.5 to 1 V in the direction of flow. This voltage loss has a negative effect on the device's properties in two respects.
  • the total power loss of the device increases.
  • the operating voltage has to be selected by 0.5 to 1 V higher than actually necessary due to the voltage loss across the diode. If the chip is not sufficiently selected reserve, for example, in a vehicle, the voltage drop across the diode can cause a reset of a device is triggered during a starting process.
  • MOSFETs metal oxide semiconductor field effect transistor
  • MOSFETs have the advantage that only a voltage of the order of 0.1 V drops across them. If the supply voltage is connected in reverse polarity, the MOSFET blocks; if it is correctly connected, the MOSFET conducts. Due to the relatively low voltage drop across the MOSFET, the losses can be greatly reduced.
  • a disadvantage of such protective circuits is that they differ significantly in dynamic behavior from a diode. MOSFETs conduct electricity in both directions when switched on. If the supply voltage drops, for example during a starting process in a vehicle, the capacities in the device thereby discharge via the MOSFET and via external loads. A support effect like using a diode does not exist.
  • the present invention is therefore the object of a protective circuit against reverse polarity of the type mentioned in such a way and further, that a safe reverse polarity protection can be realized with a dynamic behavior similar to a diode with low power dissipation.
  • the above object is achieved by the features of claim 1.
  • the circuit in question is characterized in that the gate of the MOSFET is connected to the collector of a first bipolar transistor and the source of the MOSFET is connected to the emitter of the first bipolar transistor and that the base of the first bipolar transistor is controlled with a control current, wherein the control current is derived from the voltage at the drain of the MOSFET.
  • a protection circuit can be achieved that is close to the behavior of an "ideal diode.”
  • An ideal diode conducts when current in the flow direction is desired, leaving only a negligible voltage drop across the diode.
  • Ideal diodes block very quickly when the current is reversed, and this can be realized by the protective circuit according to the invention
  • the gate of the MOSFET is connected to the collector of a first bipolar transistor and the source of the MOSFET is connected to the emitter of the first bipolar transistor
  • the base of the first bipolar transistor is driven by a control current derived from the voltage at the drain of the MOSFET so that the behavior of the MOSFET can be controlled by the voltage between the source and drain of the MOSFET.
  • a voltage is applied to the gate, which turns on the MOSFET.
  • a voltage of the order of 0.1 V drops across the MOSFET.
  • the first bipolar transistor is set in such a way that it blocks and thus has no influence on the behavior of the MOSFET. If the voltage at the source of the MOSFET breaks down, the emitter of the bipolar transistor is pulled to a lower level and the bipolar transistor switches through. The control voltage at the gate of the MOSFET is pulled down and the gate is discharged. The MOSFET becomes more high-impedance and the voltage at the emitter of the bipolar transistor continues to drop. This discharges the gate faster and faster until the MOSFET completely shuts off.
  • a circuit is provided according to the invention realized in the switched state, a voltage drop in the range of 0.1 V and below, but at the same time completely blocks in case of a voltage dip or reverse polarity.
  • the behavior of the circuit according to the invention is relatively close to that of an ideal diode.
  • a diode is used to derive the control current from the voltage at the drain of the MOSFET.
  • a diode there are Defined voltage level, since over a diode after exceeding the threshold voltage in wide ranges a nearly constant voltage drops.
  • this is formed by the base-emitter path of a second bipolar transistor.
  • This is preferably of the same type as the first bipolar transistor. This can be avoided in a simple manner that a different behavior of the first and the second bipolar transistor have a negative impact on the function of the circuit.
  • the first and second bipolar transistors could be placed as close to each other as possible. For very high demands, further improvements can be achieved when using a paired transistor in which two identical transistors are housed in a common housing. As a result, the threshold of the first transistor is clearly defined.
  • a second diode For even further improvement of the protection circuit may be arranged between the emitter and base of the second bipolar transistor, a second diode.
  • This diode can prevent too high reverse voltage between emitter and base in case of reverse polarity or voltage dip. If "only" one diode is used to derive the control current for the first bipolar transistor, the second diode would also be usable, with the second diode then being connected in anti-parallel to the first diode.
  • a resistor may be arranged between the first diode and the drain of the MOSFET. This resistor is used to affect the voltage between the gate and drain and thus in turn adjust the voltage drop across the source and drain.
  • a zener diode could be arranged in the source-gate direction parallel to the MOSFET. If too high a voltage drops across the zener diode in the event of a voltage dip or reverse polarity, then the zener diode would conduct, thus bypassing the MOSFET. The voltage between gate and Source is limited by this measure to the amount of breakdown voltage of the zener diode.
  • the wiring of the MOSFET can be powered by an auxiliary voltage.
  • the auxiliary voltage is generated by a charge pump.
  • the auxiliary voltage is preferably generated from the voltage at the drain of the MOSFET. This ensures a defined voltage difference between the voltage at the drain and the supply voltage of the wiring elements.
  • the auxiliary voltage may be above the supply voltage.
  • a preferred auxiliary voltage is 5 V above the supply voltage. Depending on the choice of the circuit elements, however, other voltage values can also be realized.
  • a third diode may be arranged in parallel to the MOSFET in the source-drain direction.
  • This diode may be formed by a diode integrated in the MOSFET. Additionally or alternatively, the third diode could be located external to the MOSFET. In this way, when an input voltage is applied to the protection circuit, the connected consumer is supplied comparatively quickly. If the auxiliary voltage for supplying the Bescharisimplantation of the MOSFETs is generated from the voltage at the drain of the MOSFETs, no further measures are necessary by the third diode to allow the building of the auxiliary voltage. The diode with the relatively high voltage drop, however, only acts during the switch-on process. After the MOSFET has been turned on, a lower voltage is dropped across the MOSFET, so that the voltage across the third diode is no longer sufficient to bring it into a conductive state or to hold it in the conducting state.
  • the third diode is preferably formed by a Schottky diode. This further reduces the power loss during the relatively short switch-on process.
  • the MOSFET is operated in the linear region.
  • the gate does not saturate and can be eliminated more quickly when the MOSFET is switched off, for example when the supply voltage drops. This contributes to an improvement of the dynamic behavior in case of error.
  • FIG. 1 shows a protective circuit according to the prior art with a diode
  • FIG. 2 shows three embodiments of protective circuits according to the prior art using a MOSFET
  • FIG. 3 shows a first embodiment of a protection circuit according to the invention
  • Fig. 4 shows a second embodiment of a protection circuit according to the invention with components for improving the behavior of the circuit
  • Fig. 5 shows the second embodiment of a protection circuit according to the invention with an exemplary selection of components.
  • Figures 1 and 2 show protection circuits as known from the prior art.
  • Fig. 1 shows the use of a diode as reverse polarity protection.
  • the diode connects the voltage source with the other electronics.
  • a capacitor which is connected after the diode between the connecting line to the other electronics and ground, is representatively drawn as a buffer capacitor. If the input voltage, for example during a starting process of a vehicle, experiences a voltage dip, as shown in the diagram at the bottom left, the diode prevents a current flow in the direction of the supply network and the capacitor with its stored charge can continue to function for a certain time Maintain electronics. Without the diode, the capacitor would not have this supporting effect, since external loads, such as the starter, would discharge the capacitor. As a result, the output voltage to other electronics breaks much less than the input voltage, as can be seen in the diagrams to the right and left of FIG. 1.
  • Fig. 2 shows a further protection circuit known from the prior art.
  • This protection circuit is based on a p-channel MOSFET.
  • the source is connected to an input voltage, drain to the other electronics and the gate is grounded. If an input voltage between 5 and 15 V, the MOSFET turns on and the other electronics are powered. With a reverse polarity connection, i. at an input voltage ⁇ 0 V, the MOSFET does not turn on, so that a reverse polarity protection is guaranteed.
  • the circuit according to FIG. 2B shows a further embodiment in which elements for protecting the MOSFET are contained.
  • the illustrated circuits have the disadvantage that they differ significantly in dynamic behavior from that of a diode.
  • a MOSFET conducts current in both directions when switched on.
  • a supply voltage drops, for example during a starting process in a vehicle
  • internal buffer capacities discharge in the device.
  • Fig. 2C The protection circuit of FIG. 2B is connected to a buffer capacitor which is connected between the connection line to the further electronics and ground. If the input voltage experiences a voltage dip, as can be seen on the left under the input of the protection circuit, a current flows through the MOSFET to the input of the protection circuit in the direction of the supply network. The capacity is discharged via external loads, such as the starter. As a result, the output voltage of the protection circuit follows the input-side voltage dip almost unaffected.
  • FIG. 3 shows a basic circuit of a protection circuit 1 according to the invention for the protection of a consumer against reverse polarity.
  • a voltage source can be connected.
  • the output 3 of the protection circuit 1 can be connected to a further electronics or generally to an electrical consumer.
  • a MOSFET T1 is connected, wherein the source is connected to the input 2 and the drain to the output 3.
  • the gate of the MOSFET T1 is connected to the collector of a first bipolar transistor T3.
  • the collector of the first bipolar transistor T3 is connected to the source of the MOSFET T1.
  • the base of the first bipolar transistor T3 is connected via a resistor R3 to the base of a second bipolar transistor T2.
  • the emitter of the second bipolar transistor T2 is connected to the drain of the MOSFET T1.
  • the collector of the second bipolar transistor is not connected; we only used the base-emitter path of the second bipolar transistor.
  • the base-emitter path acts as a first diode, which is provided for deriving the control current for the first bipolar transistor T3 from the voltage at the drain of the MOSFET.
  • an auxiliary voltage source 4 is further provided, which is shown in Fig. 3 generally by the switching symbol of a voltage source.
  • the auxiliary voltage source 4 generates a voltage of 5 V, which is added to the voltage at the drain of the MOSFET T1.
  • the auxiliary voltage is connected via a resistor R1 to the gate of the MOSFET T1.
  • Another resistor R2 is connected to the base of the second bipolar transistor T2.
  • a diode is connected in source-drain direction, which acts as a diode in the sense of the third diode according to the appended claims.
  • the protection circuit 1 is not yet supplied with voltage on the input side. Further, it is assumed that the auxiliary power source 4 is generated by a charge pump.
  • the input 2 of the protection circuit 1 is now connected to a not shown voltage source.
  • the diode in the MOSFET serves as a reverse polarity protection, wherein the voltage drop across the protection circuit at this moment is still relatively large.
  • the auxiliary voltage is generated, which serves to supply the wiring, consisting of the resistors R1, R2 and R3 and the first and the second bipolar transistor T3 and T2.
  • the gate of the MOSFET charges and the MOSFET starts to conduct.
  • the voltage loss of about 0.8 V immediately after the voltage source at the input 2 of the protection circuit 1 is reduced to below about 50 mV.
  • the resistor R2 At the base of the second bipolar transistor T2 forms through the base-emitter path together with the resistor R2, a voltage which is about 0.65 V higher than the voltage at the drain of the MOSFET.
  • a voltage which is about 0.65 V higher than the voltage at the drain of the MOSFET flows through the base-emitter path of the first bipolar transistor T3 no current and T3 blocks. This condition can be described as undisturbed normal operation.
  • the MOSFET can be kept in the linear range and generates a voltage drop of about 50 mV, regardless of the load current.
  • FIG. 4 shows a basic circuit according to FIG. 3, supplemented by further circuit elements.
  • a resistor R4 is connected in series.
  • resistor R4 can be adjusted to some extent, what is the voltage drop across the MOSFET in normal operation.
  • R4 forms a voltage divider with R2, in which a voltage drop is generated depending on the auxiliary voltage at R4. This voltage drop can be, for example, 50 mV.
  • the circuit would regulate the voltage between source and drain to a voltage drop of about 0.1V. For the circuit shows a defined behavior with temperature fluctuations and component tolerances.
  • the MOSFET T1 When selecting the n-channel MOSFET T1 used, care should be taken to ensure that it has sufficient dielectric strength for the respective application. At the same time, it is advisable to select a MOSFET with the lowest possible gate-drain capacitance if the shortest possible blocking delay time is desired. Furthermore, if possible, the resistance R ds (on) of the MOSFET in the on state should be so small that at the highest current consumption of the subsequent circuit less than 0, 1 V voltage drop would occur. If this is not realized, the MOSFET would be fully controlled and a significantly longer blocking delay time would occur in the event of a voltage drop.
  • a zener diode D2 is connected between the source and gate of the MOSFET T1. This protects the gate-source path of the MOSFET from excessive or too low voltages. This may occur, for example, when the auxiliary voltage is clearly lower than the input voltage for some reason.
  • This diode D3 is a Schottky diode having only half the voltage drop as a standard diode. As a result, the voltage loss is immediately after switching on the protective circuit further reduced.
  • the Schottky diode takes over the function of the third diode according to appended claims.
  • Fig. 5 shows a circuit with which the protection circuit according to the invention can be implemented concretely.
  • a varistor VDR is additionally mounted, with the help of which the input voltage can be limited to values that certainly will not destroy the MOSFET.
  • a capacitor C1 is also mounted, can be buffered with the dips in the supply voltage. On the other hand, the capacitor helps to achieve the shortest possible blocking delay time. It should be noted that even more protective elements can be added.
  • the protection circuit is shown in FIG. 4.
  • the resistors R1, R2 and R3 are selected with 1 ⁇ , the resistor R4 is 10 kQ.
  • the MOSFET T1 is constituted by a BUK9Y53-100B.
  • the first and the second bipolar transistor is a BC846B.
  • the second diode D1 is a BAV99
  • the zener diode D2 is an 8V2
  • the Schottky diode D3 is a V10P10.
  • a charge pump is shown, by means of which the auxiliary voltage is generated.
  • the charge pump is powered by a 3.3V square wave.
  • the square-wave signal can be generated, for example, by a microcontroller.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

L'invention concerne un circuit de protection d'un consommateur électrique contre une inversion de polarité à l'aide d'un MOSFET (transistor à effet de champ de semi-conducteur d'oxyde de métal) (T1), ledit circuit étant raccordé côté entrée à une alimentation en tension et côté sortie au consommateur, et le raccordement source du MOSFET (T1) étant connecté à l'alimentation en tension et le raccordement drain du MOSFET (T1) étant connecté au consommateur. L'invention vise à créer une protection fiable contre les inversions de polarité, présentant un comportement dynamique similaire à celui d'une diode tout en réduisant la dissipation d'énergie. A cet effet, le circuit est caractérisé en ce que la grille du MOSFET (T1) est connectée au collecteur d'un premier transistor bipolaire (T3) et la source du MOSFET (T1) est connectée à l'émetteur du premier transistor bipolaire (T3), et la base du premier transistor bipolaire (T3) est commandée par un courant de commande, ledit courant de commande étant dérivé de la tension sur le drain du MOSFET (T1).
EP11818916.6A 2010-11-22 2011-10-12 Circuit de protection contre les inversions de polarité Withdrawn EP2591550A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010051874A DE102010051874A1 (de) 2010-11-22 2010-11-22 Schaltung zum Schutz gegen Verpolung
PCT/DE2011/050046 WO2012069045A2 (fr) 2010-11-22 2011-10-12 Circuit de protection contre les inversions de polarité

Publications (1)

Publication Number Publication Date
EP2591550A2 true EP2591550A2 (fr) 2013-05-15

Family

ID=43878000

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11818916.6A Withdrawn EP2591550A2 (fr) 2010-11-22 2011-10-12 Circuit de protection contre les inversions de polarité

Country Status (5)

Country Link
US (1) US9324530B2 (fr)
EP (1) EP2591550A2 (fr)
CA (1) CA2815248A1 (fr)
DE (2) DE102010051874A1 (fr)
WO (1) WO2012069045A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010054402A1 (de) 2010-12-14 2012-06-14 Init Innovative Informatikanwendungen In Transport-, Verkehrs- Und Leitsystemen Gmbh Schaltung zum Schutz eines elektrischen Verbrauchers gegen Überspannungen
DE102011054729B4 (de) * 2011-10-21 2013-12-19 Nsm-Löwen Entertainment Gmbh Unterhaltungsspielgerät
DE102012219365A1 (de) * 2012-10-23 2014-04-24 Schmidhauser Ag Gleichspannungswandler
DE102012222895A1 (de) * 2012-12-12 2014-06-12 Robert Bosch Gmbh Schutzschaltung
CN103390883B (zh) * 2013-06-28 2016-03-02 惠州市蓝微电子有限公司 一种锂电池充电保护电路
CN104702097B (zh) * 2013-12-04 2017-11-24 台达电子企业管理（上海）有限公司 电源装置和通过电源装置产生电源的方法
DE102016114002A1 (de) * 2016-07-29 2018-02-01 Eberspächer Controls Landau Gmbh & Co. Kg Trennschalteranordnung, insbesondere für ein Bordspannungssystem eines Fahrzeugs
US10778019B2 (en) * 2017-07-20 2020-09-15 Connaught Electronics Ltd. Reverse current prevention for FET used as reverse polarity protection device
TWI664814B (zh) 2017-11-03 2019-07-01 尼克森微電子股份有限公司 單向導通裝置
WO2021252547A1 (fr) * 2020-06-08 2021-12-16 A123 Systems, LLC Circuit de protection pour système de gestion de batterie

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US5539610A (en) * 1993-05-26 1996-07-23 Siliconix Incorporated Floating drive technique for reverse battery protection
US5434739A (en) * 1993-06-14 1995-07-18 Motorola, Inc. Reverse battery protection circuit
US5636116A (en) * 1993-07-14 1997-06-03 Melcher Ag Synchronous rectifier impervious to reverse feed
DE19506074A1 (de) * 1995-02-22 1996-09-05 Telefunken Microelectron Schaltungsanordnung zum Schutz der elektrischen Verbraucher eines Kraftfahrzeugs vor unzulässigen negativen Spannungen auf dem Bordnetz
US6469564B1 (en) 1998-04-14 2002-10-22 Minebea Co., Ltd. Circuit simulating a diode
DE19840300A1 (de) * 1998-09-04 2000-03-16 Bosch Gmbh Robert Verpol-Schutzschaltung für eine elektronische Leistungsendstufe
FI118024B (fi) * 2001-12-17 2007-05-31 Tellabs Oy MOSFETn avulla toteutettu polariteettisuoja
ITTO20020805A1 (it) * 2002-09-17 2004-03-18 Finmek Magneti Marelli Sistemi Elettronici Spa Circuito di protezione dall'inversione di polarita'
EP1420457B1 (fr) * 2002-11-14 2012-01-11 STMicroelectronics Srl Procédé de fabrication d'un dispositif semi-conducteur de puissance à grille isolée et diode Schottky
US20080239603A1 (en) * 2007-03-27 2008-10-02 Eaglepicher Energy Products Corporation Battery protection circuit for lithium cabon monofluoride battery
US7898219B2 (en) * 2008-02-25 2011-03-01 Jimmie Doyle Felps On-board battery supervisor

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See also references of WO2012069045A2 *

Also Published As

Publication number Publication date
US20130229738A1 (en) 2013-09-05
DE202010016526U1 (de) 2011-04-14
WO2012069045A3 (fr) 2012-08-23
US9324530B2 (en) 2016-04-26
DE102010051874A1 (de) 2012-05-24
CA2815248A1 (fr) 2012-05-31
WO2012069045A2 (fr) 2012-05-31

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