EP2572186A1 - Procédé et dispositif pour caractériser des structures de surface pyramidales sur un substrat - Google Patents

Procédé et dispositif pour caractériser des structures de surface pyramidales sur un substrat

Info

Publication number
EP2572186A1
EP2572186A1 EP11710176A EP11710176A EP2572186A1 EP 2572186 A1 EP2572186 A1 EP 2572186A1 EP 11710176 A EP11710176 A EP 11710176A EP 11710176 A EP11710176 A EP 11710176A EP 2572186 A1 EP2572186 A1 EP 2572186A1
Authority
EP
European Patent Office
Prior art keywords
reflection
pyramidal
intensity
light beam
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11710176A
Other languages
German (de)
English (en)
Inventor
Martin Dupke
Karsten Funk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP2572186A1 publication Critical patent/EP2572186A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity

Definitions

  • the invention relates to a method for the characterization of pyramidal surface structures on a substrate according to claim 1 and a device therefor according to claim 11.
  • Pyramidal surface structures are used, for example, for the anti-reflection surface structuring of monocrystalline silicon wafers intended for the production of solar cells.
  • the substrates are wet-chemically treated so that the desired surface structure is formed on their surface. This consists of a large number of microscopic single pyramids. Each individual pyramid arises randomly, the size fluctuates within a certain tolerance range, but the overall structure formed from them is oriented over the entire surface in a given crystal direction. In the case of a substrate formed from a single crystal, a uniform orientation with larger and smaller random pyramids, so-called "random pyramids", thus forms on the surface.
  • the evaluation of the reflection pattern is carried out with an intensity determination of at least one directional pyramidal reflection maximum generated by side flanks of the pyramidal surface structures, a diffuse reflection band produced by edges of the pyramidal surface structures and a flaw maximum generated by flat flaws.
  • the entire characterization is thus carried out by light reflection and therefore contactless.
  • the process fully relies on the physical laws of light reflection. It therefore does not require a large apparatus
  • a size measurement of the pyramidal surface structures takes place by determining a ratio between the initial intensity of the incident light beam and the intensity component of the pyramidal reflection maximum.
  • Reflection maximums are proportional to the size of the reflective pyramid surfaces and therefore provide a first indication of their average size.
  • a size measurement of the pyramidal surface structures takes place by carrying out a comparative measurement of the intensity component of the pyramidal reflection maximum, an intensity component of the diffuse reflection band and an intensity component of the flaw maximum.
  • a measured value calibration is performed using reference substrates with known surface structures.
  • the measurement of a size distribution of the pyramidal surface structures is carried out by changing a cross section of the incident light beam.
  • the ratios of the intensity components of the reflection pattern are detected as a function of the change in cross-section, and an acquired intensity function is evaluated.
  • the cross-sectional change of the light beam is sensitive to the reflective areas of the surface structure.
  • the occurring intensities in the reflection pattern are then a direct representation of the size distribution of the random pyramids on the carrier surface.
  • the evaluation of the intensity function may suitably as a
  • Proportionality test between the cross-sectional change and the resulting variable intensity components are executed. If this dependence is not proportional, there is a negative test result. In such a negative test result, the irradiated light beam is moved over the substrate. In conjunction therewith, a tolerance measurement of the intensity components of the reflection pattern takes place. From the result of the tolerance measurement, the size distribution of the pyramidal surface structures is then determined.
  • the measurements of the size and the measurement of the size distribution can also be combined with each other.
  • the cross section of the light beam for measuring the size distribution is changed as described, and at a maximum cross section of the light beam, the size measurement of the pyramids is carried out in the manner described above.
  • a variation of a horizontal angle of incidence of the light beam can be executed.
  • the method steps described above do not change as a result.
  • the orientation of the pyramids on the support is very easy to detect.
  • the evaluation of the reflection pattern can be done in different ways.
  • the evaluation of the reflection pattern takes place via an image evaluation using image acquisition, in particular a screen projection or a projection on a sensor array.
  • the evaluation of the reflection pattern by a series of distributed individual light sensors is possible.
  • a device for characterizing pyramidal surface structures on a substrate comprises a light source directed towards the substrate for generating a light beam, a receiving and transporting device for the substrate, a detection device arranged in the reflection region of the light beam for a reflection pattern generated by the carrier Evaluation device for intensity maxima of the reflection pattern.
  • the light source may have a beam optics for generating a variable beam cross section.
  • a laser device is preferably used as the light source.
  • the detection device contains at a first guide form an image acquisition unit, in particular a sensor array. In another embodiment, the detection device includes a group of individual sensors.
  • the evaluation device is expediently designed as an electronic control and processing unit, in particular a computer, coupled to the receiving and transport device, the beam optics and the detection device, with a control, measurement and evaluation program.
  • Fig. La is a schematic representation of a carrier with a
  • Fig. Lb is an enlarged view of a single pyramid in one
  • 2b shows a representation of the reflection conditions on a single pyramid in a direction of incidence oriented view
  • 3a shows a reflection pattern of the pyramidal surface structure without flaws
  • 3b is a reflection pattern of the pyramidal surface structure with existing defects
  • FIG. 1a shows a substrate T whose surface is covered by a plurality of individual pyramids P.
  • the pyramids are formed, for example, by a wet-chemical etching of a single crystal. The size and position of each pyramid is random, but each pyramid is oriented in a unitary direction dictated by the single crystal. The pyramids are thus not twisted against each other. Within the pyramidal surface a defect E is indicated. At this point, the pyramids are missing. The surface of the carrier is there even.
  • the light reflection of the given pyramidal surface structure is evaluated.
  • a light beam L is directed onto the surface.
  • the pyramidal surface structure as a whole reflects the incident light beam into a series of reflected light components RL which are arranged in the form of a reflection pattern, as will be explained in more detail below.
  • Fig. Lb shows such a single pyramid P in a plan view.
  • the pyramid consists of a series of side surfaces S and edges K.
  • the reflection pattern generated by these sections is therefore not homogeneous or diffuse, as is the case with surfaces with random roughness. Rather shows the entire pyramidal surface structure is a typical for such structures reflection pattern.
  • Figures 2a and 2b explain the reflections on a single pyramid in more detail. It is assumed that the individual pyramids, despite their microscopic dimensions, can be regarded as macroscopic reflective bodies, so that the laws of reflection of the ray optics can be used.
  • the investigation of the pyramidal surface structure by means of light reflection is based on the fact that the pyramidal structures, despite their microscopic dimensions, have optically reflective properties and act as a whole of small mirrors.
  • Fig. 2a shows the reflection of incident light in a transverse to the direction of light incidence oriented side view.
  • the beam directed from the top left onto the surface can be divided into a partial beam A and a partial beam F for the following consideration.
  • the partial beam A strikes the pyramid P and, in accordance with the laws of reflection of the beam optics, is reflected along a solder L P of the reflective pyramid surface in the direction of the partial beam A '.
  • the partial beam F strikes a plane defect E, at which there is no pyramidal structure. This partial beam is in accordance with
  • FIG. 2b shows a representation of the reflection conditions on a single pyramid in a view oriented in the direction of the light incidence.
  • the ray F is not shown in this illustration for the sake of simplicity.
  • the partial beams A and B are mirrored at different side surfaces of the pyramid and reflected in correspondingly different directions along the partial beams A 'and B'.
  • a partial beam C is shown. This strikes an edge of the pyramid. Since this edge is not a geometrically ideal edge and has a finite radius of curvature, the partial beam C is diffusely reflected in different directions C. All sub-beams C from the diffuse reflection are, however, essentially in one plane.
  • the reflection pattern R 'resulting from these reflections and, for example, displayable on a screen is shown in FIG. 3a.
  • the reflected partial beams A 'and B' result in each case a left and right of the incident
  • the diffused partial beams C are shown in the form of a circular arc-shaped reflection band between the reflection magnitudes A 'and B'.
  • the radius r of the reflection band and the distance between the maxima A 'and B' depend on the vertical angle of the incident light beam.
  • FIG. 3b shows the reflection image in the case of defects on the substrate E.
  • the partial beam F ' produces a defect maximum F', which is due to the simple reflection at the flat defect corresponding to the representation of Fig. 2a.
  • the position of the maxima A ', B' and F ', the radius and the length of the reflection band C and the distances of the maxima from each other also depend on the angle of incidence of the light beam on the surface.
  • the size and, on the other hand, the size distribution of the random pyramids on the surface of the support can be determined as follows:
  • the intensities I A - and I B - occupy a smaller proportion of the total reflected intensity, since in this case a larger part of the incident light is reflected at the edges of the pyramids and reflected back as reflection band C.
  • the pyramid size is therefore the smaller the higher the intensity I c of the reflection band or the stronger the
  • Reflection band is formed.
  • the sides of the pyramids are smaller and the number of edges located in a region detected by the incident light beam is thus larger.
  • the characterization of the pyramid size is expediently carried out by a comparative measurement.
  • incident light is resorted to a laser beam.
  • a reference carrier whose pyramid size has already been specified in another way is put into the reflection measurement.
  • two or more borderline specimens with particularly large or very small pyramidal structures are measured. Based on the measured light intensities I A -, I B -, I C and I F - and any other diffusely reflected light component, a calibration of the measurement is possible, so that a comparison measurement between different substrates with unknown pyramidal surface structure is possible.
  • the correspondingly expanded or focused light beam simply captures only a larger or smaller number of single pyramids proportional to the size of the light spot, which contribute in a similar manner to the overall intensities in the reflection pattern. If changes in the intensities, which are not proportional to the beam cross-section, are shown, a relative movement between the carrier surface and the laser beam is carried out with a narrow beam cross-section. The measured in this movement tolerance in the determined intensities I A -, IB-, IC and I F - then gives the size distribution of the individual pyramids on the surface studied.
  • the size and size measurements can also be combined.
  • a substrate is moved through under a corresponding measuring device. This is expediently achieved by installing the measuring apparatus in an already existing belt transport device and thus designed as part of an incoming control for later production processes. All substrates pass under the light source, i. H. the laser beam, through. During this transport, the beam cross section of the laser is continuously changed. The size distribution in the pyramidal surface structure is measured during narrow beam cross sections. During a large beam cross-section set for a short time, the size determination of the individual pyramids takes place as described. In this
  • An essential advantage of such an approach is that the size and the size distribution within the pyramidal surface structure and thus the "random pyramids", quasi instantaneous, because with optical metrology an evaluation during an ongoing process is unproblematic executable.
  • the measuring method can also be modified by irradiating the surface structure at other horizontal angles, in which, for. B. only one side surface of the pyramids is illuminated.
  • the reflection pattern appears in the form of a more or less strongly opened "V", whereby nothing changes at the defect maximums F.
  • the evaluation of the measured intensities in this case takes place in a manner which is fundamentally not different from the preceding method steps.
  • an image analysis of the reflection pattern projected on a screen or a construction of individual sensors can be used, which are attached in defined locations.
  • FIGS. 4 and 5 show exemplary measuring apparatuses for this purpose.
  • the measuring apparatus contains a light source 1, which is preferably designed as a laser light source and therefore a highly collimated light beam having a sufficient initial intensity and a defined impact point on the
  • Substrate T can produce. Furthermore, a receiving and Transportvor- device 2 is provided, which may also be designed as part of an existing conveyor system.
  • a detection device 3 is used to detect the reflected light components ⁇ ', B', C and F 'according to the preceding description.
  • Control and evaluation unit 4 is used for measured value determination and also generates an operation control for the recording and transport device 2. Furthermore, a beam optics 5 is provided, with which the cross section of the laser light emitted from the light source 1 can be influenced. Their operation is also determined by the control and evaluation unit 4. Finally, the control and evaluation unit contains corresponding control and measuring programs for carrying out the measuring process in accordance with the previously explained method steps.
  • a part of the detection device 3 is designed in the form of a sensor array 6, which is designed as a component of a camera device not shown here.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

L'invention concerne un procédé et un dispositif pour caractériser des structures de surface pyramidales sur un substrat. Le procédé comprend les étapes consistant à soumettre la surface de substrat notamment à l'action de lumière laser, détecter un motif de réflexion du faisceau lumineux produit par la surface de substrat, évaluer le motif de réflexion par une détermination de l'intensité d'au moins un maximum de réflexion pyramidale orientée produit par des flancs latéraux des structures de surface pyramidales, d'une bande de réflexion diffuse produite par des bords des structures de surface pyramidales et d'un maximum d'endroits défectueux produits par des endroits défectueux plans.
EP11710176A 2010-05-19 2011-03-21 Procédé et dispositif pour caractériser des structures de surface pyramidales sur un substrat Withdrawn EP2572186A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201010029133 DE102010029133A1 (de) 2010-05-19 2010-05-19 Verfahren und Vorrichtung zur Charakterisierung von pyramidalen Oberflächenstrukturen auf einem Substrat
PCT/EP2011/054216 WO2011144374A1 (fr) 2010-05-19 2011-03-21 Procédé et dispositif pour caractériser des structures de surface pyramidales sur un substrat

Publications (1)

Publication Number Publication Date
EP2572186A1 true EP2572186A1 (fr) 2013-03-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP11710176A Withdrawn EP2572186A1 (fr) 2010-05-19 2011-03-21 Procédé et dispositif pour caractériser des structures de surface pyramidales sur un substrat

Country Status (3)

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EP (1) EP2572186A1 (fr)
DE (1) DE102010029133A1 (fr)
WO (1) WO2011144374A1 (fr)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
DE102012012156B4 (de) * 2012-06-19 2014-05-15 Audiodev Gmbh Verfahren zum optischen vermessen von pyramiden auf texturierten monokristallinen siliziumwafern
US10018565B2 (en) * 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
CN111192932B (zh) * 2018-11-14 2021-05-04 苏州纳捷森光电技术有限公司 一种具有图案化表面的硅结构、制备方法及太阳能电池
CN110426395B (zh) * 2019-07-02 2022-02-11 广州大学 一种太阳能el电池硅片表面检测方法及装置

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US3782836A (en) * 1971-11-11 1974-01-01 Texas Instruments Inc Surface irregularity analyzing method
ES2235608B1 (es) * 2003-07-15 2006-11-01 Consejo Sup. De Invest. Cientificas Metodo optico y dispositivo para la cuantificacion de la textura en celulas fotovoltaicas.
EP1692458B1 (fr) * 2003-12-12 2009-08-12 SolarWorld Industries Deutschland GmbH Mesure de la taille des pyramides sur une surface texturee
US7719674B2 (en) * 2006-11-28 2010-05-18 Applied Materials South East Asia Pte. Ltd. Image splitting in optical inspection systems

Non-Patent Citations (1)

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Title
See references of WO2011144374A1 *

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WO2011144374A1 (fr) 2011-11-24

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