EP2571098B1 - Reconfigurable radiating phase-shifter cell based on resonances, slots and complementary microstrips - Google Patents

Reconfigurable radiating phase-shifter cell based on resonances, slots and complementary microstrips Download PDF

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Publication number
EP2571098B1
EP2571098B1 EP12183120.0A EP12183120A EP2571098B1 EP 2571098 B1 EP2571098 B1 EP 2571098B1 EP 12183120 A EP12183120 A EP 12183120A EP 2571098 B1 EP2571098 B1 EP 2571098B1
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EP
European Patent Office
Prior art keywords
phase
cell
shifting
slots
loads
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EP12183120.0A
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German (de)
French (fr)
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EP2571098A1 (en
Inventor
Hervé Legay
Etienne Girard
Daniel Bresciani
Raphaël Gillard
Hassan Salti
Tony Makdissy
Erwan Fourn
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Centre National de la Recherche Scientifique CNRS
Thales SA
Institut National des Sciences Appliquees de Rennes
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Centre National de la Recherche Scientifique CNRS
Thales SA
Institut National des Sciences Appliquees de Rennes
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/26Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
    • H01Q3/30Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
    • H01Q3/34Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
    • H01Q3/36Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/18Phase-shifters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H01Q3/46Active lenses or reflecting arrays

Definitions

  • the field of the invention is that of reconfigurable radiative phase-shifting cells. It applies in particular to reflector networks for an antenna intended to be mounted on a spacecraft such as a telecommunications satellite or on a terrestrial terminal for telecommunication or satellite broadcasting systems.
  • a reflecting array antenna (“reflectarray antenna”) comprises a set of radiant phase-shifter cells assembled in one or two-dimensional array and forming a reflective surface for increasing the directivity and gain of the antenna.
  • the radiative phase-shifting cells of the reflector network, of the metal-pellets (also called “metal patches”) and / or slot-type, are defined by parameters which can vary from one cell to another, these parameters being for example the geometric dimensions of the etched patterns (length and width of "patches” or slits) that are set to obtain a desired radiation pattern.
  • the radiative phase-shifting cells may consist of metal patches charged with radiating slots and separated from a metal mass plane of a typical distance between ⁇ g / 10 and ⁇ g / 6, where ⁇ g is the guided wavelength in the spacer medium.
  • This spacer medium may be a dielectric material, but also a composite stack produced by a symmetrical arrangement of a honeycomb type separator and dielectric skins of thin thicknesses.
  • the elementary cell can precisely control the phase shift it produces on an incident wave, for the different frequencies of the bandwidth. It is also necessary that the manufacturing process of the reflector network is as simple as possible.
  • a cell according to the figure 1 comprises a substrate SB having a rear face secured to a ground plane.
  • This phase-shifting cell only works for a single linear polarization of the incident wave.
  • the size of the cell is relatively large, of the order of 0.7 ⁇ , where ⁇ denotes the wavelength.
  • the mesh of the reflective network ie the spatial periodicity according to which the cells are arranged in a network, is therefore much greater than 0.5 ⁇ . This results in a non-optimal behavior for very oblique incidences of the wave, related to the possibility of excitation of a mode of Floquet higher order. This effect results in degradation of the secondary lobes of the radiation pattern, also designated by the person skilled in the art as the "image lobe".
  • the phase shifter cell functions primarily as a "patch" type resonance, modulated by the electrical length of the slot or slots.
  • the realization of a phase cycle greater than 360 ° by the modulation of this single resonance is a critical point, and certain phase states are made by very resonant configurations of the phase-shifter cell. These highly resonant configurations are also characterized by higher losses, as well as higher sensitivities of electrical characteristics to manufacturing uncertainties of the cell and variable and controlled localized loads.
  • the Applicant filed a second French patent application entitled "Optimally Arranged Reflector Network and Antenna With Such Reflector Network”. It presents a phase cycle carried out by phase-shifting cells having a progressively progressive internal structure from a phase-shifting cell to another phase-shifting cell. adjacent, and thus not introducing strong ruptures of periodicity on the reflecting surface. This type of cell thus makes it possible to avoid, in the radiation pattern, the disturbances induced by a parasitic diffraction phenomenon on areas with sudden rupture of periodicity.
  • the figure 1 bis represents an example of a periodic pattern comprising a one-dimensional arrangement of a plurality of elementary radiating elements and making it possible to obtain a phase rotation of 360 °. It has the property of having the same extreme phasing cells of the phase cycle.
  • a progressive phase cycle has also been proposed from a phase-shifting cell with variable and controlled localized loads.
  • the figure 2 presents the diagram of a radiant phase-shifting cell for such a reflector grating.
  • This phase-shifting cell is, according to one embodiment, in the form of a cross with two perpendicular branches.
  • the cross has three concentric annular slots 81, 82 and 83 made in a metal patch.
  • Variable localized and controlled loads 85 are arranged in a chosen manner in the slots and make it possible to vary the electrical length of the slots and therefore the phase of a wave reflected by the phase-shifting cell.
  • phase cycle greater than 360 °, and having the same initial and final phase-shifting cell of the cycle, it is very difficult to obtain these phase states with poorly resonant cells.
  • a large number of resonant modes may be potentially excited, due to the presence of several resonators.
  • the appearance of these resonant modes can lead to a sudden variation of the phase as a function of frequency. Rapid phase changes result in significant losses especially when ohmic MEMS are used and sensitivity to MEMS fabrication dispersions.
  • An object of the invention is to propose a variable phase and controlled localized phase shifter cell (microswitches) making it possible to cover a range of phase shift with a reduced frequency variation of the phase, in other words with a more linear, more stable behavior of the phase according to the frequency of the incident signal.
  • an object of the invention is to minimize the resonant nature of the cell.
  • the subject of the invention is a radiant phase-shifting cell comprising a plurality of conductive elements formed on the surface of a substrate, above and away from a ground plane, said conductive elements being separated by slots , the arrangement of the slots forming an equivalent resonator whose electrical shape configures the phase shift applied on a wave to be reflected, characterized in that the cell comprises controlled variable loads able to vary the length and / or the electrical width of said slots, the conductive elements and the variable loads controlled are arranged so that, according to at least a first configuration of said charges, a conductive surface of microwave signals is formed in order to create an inductively dominant resonator, and so that, according to at least one second configuration, a slot is formed around at least one conductive element to create a resonator dominated said capacitive surface, said conductive surface formed in the first configuration surrounding said conductive element around which a slot is formed in the second configuration.
  • the management of the resonances of the slots and the resonators of the microstrip type is carried out so as to rather excite an equivalent resonance of the "slits" type in a first part of the phase cycle, and rather equivalent resonance of the "microstrip” type (also called “microstrip”). patch ”) in a second part of the phase cycle.
  • the first part of the cycle phase corresponds to a resonator whose predominant behavior is inductive, in other words, whose equivalent resonator is more that of a parallel LC resonator than that of a serial LC.
  • the second part of the phase cycle corresponds to a resonator whose predominant behavior is capacitive, that is, whose equivalent resonator is more that of a series LC resonator than that of a parallel LC.
  • the equivalent resonators of the variable and controlled localized phase-shifting cell can describe a cycle similar to that presented in figure 1bis . This property makes it possible, for example, to perform a phase cycle greater than 360 °, and to have similar equivalent resonators for the extreme values of the phase cycle.
  • phase range of 360 ° can indeed be segmented into two sub-ranges of about 180 °. This segmentation into two sub-ranges is made possible by the complementarity of the resonant modes of slot or patch type.
  • the periodic arrangement of the radiant phase shifter cell according to the invention defines a reflector panel of an antenna assembly.
  • the assembly may, in addition, comprise a plurality of reflector panels comprising phase-shifting cells according to the invention.
  • the conductive surface on the front face is separated from the ground plane by a distance equal to a quarter of the wavelength of the incident signal.
  • the resonances in slot mode (first configuration) and in microstrip mode (second configuration) can be separated by 180 °.
  • the conductive element around which a slot is formed in the second configuration is located substantially in the center of the cell, the conductive elements forming the conductive surface being located at the periphery, said conductive surface being annular, each of said peripheral conductors being connected to the central conductor and neighboring peripheral conductors via controlled capacitive loads.
  • annular is meant a slot shaped closed loop. This is formed by the interconnection of different peripheral conductive elements. Its shape may be, for example, rectangular, circular, hexagonal or any other polygonal shape, or closed curve.
  • the conductive elements may take the form of a cross with four branches aligned in several rows, the crosses belonging to two successive rows being offset relative to each other, the crosses being connected via controlled variable capacitive loads.
  • the shape of the conductive elements may be different, for example, square patches, disc-shaped areas.
  • said annular conductive surface is formed by conducting ribbons framed by annular slots, said ribbons being connected by capacitive charges able to modify the length and / or the electrical width. interconnecting slots of said annular slots.
  • the cell may comprise a conductive surface in which at least two first substantially concentric slots are spaced apart from one another, the conductive surface being disposed above a ground plane, arrangement of the slots forming an equivalent resonator whose electrical shape configures the phase shift applied to an incident wave, the cell being characterized in that it comprises interconnection slots connecting said first slots to each other, and a plurality of variable charges controllers adapted to vary the length and / or the electrical width of said first slots and said interconnection slots, said charges being activatable to configure the cell according to a resonator substantially equivalent to a parallel LC circuit, said charges being also activatable according to at least another configuration to configure the cell according to a substantially equivalent resonator to a LC series circuit.
  • phase-shifting cell can also be considered as the arrangement of microstrip resonators, namely a metal frame, an intermediate metal ring cut at several points, and a metal central patch.
  • the connections made by variable and controlled localized loads - also called micro-actuators, microswitches or short-circuiting means - make it possible to modify the length and / or the electrical width of the equivalent microstrip resonator.
  • the cell comprises more than two concentric slots. It comprises for example three slots, with interconnection slots between each successive concentric slot.
  • the charges connecting the peripheral conductive elements to each other are activated, the charges connecting the central conductive element to the peripheral conductive elements being deactivated. , so as to form a resonant slot whose main contribution is equivalent to that of a parallel LC circuit.
  • the charges connecting the peripheral conductive elements to each other are adapted to take multiple values between two extreme values in order to be able to vary the dimensions of the resonant slot according to said values progressively.
  • the charges connecting the peripheral conductive elements to each other are deactivated, the charges connecting the central conductive element to the peripheral conductive elements being activated. , so as to form a resonant microstrip whose main contribution is equivalent to that of a series LC circuit.
  • the charges connecting the central conductive element to the peripheral conductive elements are adapted to take multiple values between two extreme values in order to be able to vary the dimensions of the gradually equivalent resonant microstrip according to said values.
  • the charges connecting the central conductive element to the peripheral conductive elements are adapted to vary independently of the value of the charges connecting the peripheral conductive elements to each other, so that the phase difference range applied to the incident wave is decomposed into two phase shift intervals, the phase shifts applied in the first interval being obtained with a resonant slot type configuration, the phase shifts applied in the second range being obtained with a microstrip type configuration resonant.
  • variable charges and the dimensions of the conductive elements are determined so that the configuration of the cell making it possible to apply the phase shift corresponding to the first end of the phase-shift range is identical to the configuration of the cell for applying the phase shift corresponding to the second end of the range.
  • the phase-shift range is 360 °.
  • the conductive elements, the slots and the capacitive charges are arranged on the cell according to a center of symmetry placed at the center of the cell.
  • the capacitive charges are diodes, MEMS, or ferroelectric capacitors.
  • the subject of the invention is also a reflector array comprising a plurality of radiative phase-shifting cells as described above, said cells forming the reflecting surface of the grating.
  • the invention also relates to an antenna comprising a reflector network as described above.
  • the figure 3 presents an embodiment of a radiant phase shifter cell 200 according to the invention.
  • the cell 200 comprises a planar structure as described in the phase-shifting cells of the state of the art and the figure 3 represents the front view of the planar structure.
  • a planar structure comprises a substrate having a rear face secured to a ground plane and a front face.
  • the materials used to form the substrate, the dielectric layers and the conductive layers do not limit the scope of the invention. For example, mention may be made of the materials named in the documents of the state of the art described above.
  • the phase shifter cell 200 is preferably of rectangular shape. However, other embodiments are possible and may be mentioned by way of non-limiting example a hexagonal shaped surface or circular shape.
  • the cell comprises at least two first slots, a first slot 202 and a second slot 203 concentric.
  • the first slot 202 is positioned at the outer periphery with respect to the second slot 203, that is to say at a greater distance from the center of the patch relative to the second slot 203.
  • the phase-shifter cell 200 may comprise two slots 202 and 203 or more, as illustrated on the figure 3 .
  • the slots 202 and 203 have a shape extending longitudinally to the shape of the metal frame 201.
  • the slots 202 positioned at the outer periphery of the patch surround the slots 203 at the inner periphery.
  • phase-shifting cells are intended to operate for a single linear polarization, it is possible to short-circuit the concentric slots at a point where the electric field is zero, as shown in FIG. figure 7 .
  • This possibility is not available when the cell is intended to operate in double linear polarization, because at the point where the electric field is zero in the concentric slot for a linear polarization, it is maximum for the other linear polarization orthogonally.
  • the periphery 201 of the cell is separated from the outer concentric slot 202 by a conductive strip 208, also known as the "frame".
  • the slots 202 and 203 are connected by at least four interconnection slots 204.
  • This slot arrangement defines metal strips 207 placed in interface between the concentric slots 201, 202.
  • localized variable and controlled loads 206 are arranged at selected locations on the first slots 202 and 203, and on the interconnection slots 204. These are for example on / off switches for making short circuits, or variable capacitive loads. The purpose of the switches is to change the length and / or electrical width of the equivalent "slot" resonator or equivalent "microstrip" resonator.
  • the various variable and controlled localized loads 206 of the phase-shifting cell are controlled to configure the length and / or the electrical width of the first slots 202 and 203 so that the equivalent resonator of the phase-shifting cell acts as a phase-shifting cell. introducing a selected phase shift onto an incident wave.
  • the variation of the electrical length of the interconnected slots 202, 203 and 204 modifies the electrical dimensions of the equivalent slot or patch resonator.
  • phase shift values of the same cell can vary continuously or discontinuously.
  • Electronic control means described below with regard to figures 8a , 8b , and 9 are able to control variable localized loads and controlled so as to vary the phase shift continuously or discontinuously.
  • the first is to dispose of the microswitches ON / OFF along the slot, and to vary the length of the section of the slot between two switches performing a short circuit (ON).
  • the ground plane is separated from the front surface of the antenna by a thickness equal to a quarter of the guided wavelength, then it is possible to cover the entire phase of 360 °.
  • the microswitches are activated according to a progression making it possible to approach the cycle of equivalent cells.
  • An example is proposed: the first cell 401 of the cycle illustrated in figure 4 is where all the micro-switches are in the low state. The phase difference is 180 °, corresponding to the response of a metallized plate. Gradually, from the second cell illustration 402 to the fifth cell illustration 405, the microswitches are released in the center of the cell, to perform a function equivalent to an opening in the metallized plate, the size of which increases. .
  • the microswitches are progressively closed again from the center, to have an operation equivalent to that of a central patch which expands, until finding for the ninth illustration 409 a identical configuration to the first illustration of cell 401.
  • the cycle travels a phase shift over a range of value delimited by a first extreme value and by a second extreme value, with a configuration of micro-switches identical for the first and for the second extreme value, without having to operate around a resonance frequency.
  • This first method of modifying the electric parameters of the slots requires a significant number of micro-switches. It is possible to reduce the number, and optimize the cycle to cover a range of sufficient phase shift. However, if the number of micro-actuators is significantly reduced, it will not be possible to avoid the excitation of higher modes inside this cell. These higher modes make it possible to carry out a phase shift, but are often associated with greater frequency variations of the phase. They can also induce cross polarization radiation.
  • the micro-switches are reconfigurable localized loads, for example MEMS type (acronym for Micro Electro-Mechanical System), diodes, or variable ferroelectric capacitors.
  • a phase-shifting cell producing the same phase for the two linear polarizations is invariable by rotation. This property of symmetry avoids exciting higher modes contributing to the cross polarization, and also can alter the stability of the phase in the main polarization. A minimum of four MEMS per command must generally be used to respect this symmetry constraint.
  • a phase-shifting cell operating in linear double polarization and producing independent phases in each of the linear polarizations has two axial symmetries. This property avoids exciting higher modes contributing to the cross polarization, and also can alter the stability of the phase in the main polarization. Such a property requires the use of a minimum of two MEMS per command and bias.
  • a cell operating in simple linear polarization has two axial symmetries. This property avoids exciting higher modes contributing to cross polarization and may also alter the stability of the phase in the main polarization. Such a property requires the use of a minimum of two MEMS per command.
  • Degraded embodiments can also be realized, for example with the aim of reducing the number of MEMS, or of increasing the number of phase states for the same number of MEMS.
  • the second method for managing the phase cycle by successively exciting a slot-like or patch-type equivalent resonator is to vary the capacitive loading of the slots.
  • a slot is loaded by a capacity, for example at its center. This capacitive loading of the slot makes it possible to vary the speed of the phase in the slot, and thus to modify their resonance frequency.
  • the capacity variation can be performed using several digital capabilities.
  • the concept is derivative of distributed capacitive loading transmission lines DMTL (Distributed MEMS Transmission Line).
  • phase-shifting cell operates in the same way as a slot whose length and electrical width parameters are varied.
  • the concentric slits are non-resonant.
  • the capacitive loads of the interconnection slots are varied, thus connecting the four pieces of tape 207 (cf. figure 2 ) of the intermediate microstrip ring.
  • the phase-shifting cell operates in the same way as a microstrip resonator whose length and electrical width parameters are varied.
  • variable capacitive loads are used to short-circuit the slots
  • these charges can be realized by means of a micro-switch in series with a capacitance.
  • the usual loading capacity values for changing slot resonances are between 20 and 200 fF for operation around 10 GHz. Nevertheless, it is not always easy to achieve varying capacities, and it is possible to vary the capacity in digital increments.
  • the load consists of several parallel capabilities connected to a switch.
  • the 360 ° phase shift range begins and ends optionally with an identical equivalent resonator.
  • the cell according to the invention can thus cover a range of 360 ° by a loopback of the equivalent resonator shape.
  • a reflecting surface may consist of several periodic patterns, a pattern consisting of several adjacent phase shifters each configuring a near phase shift, to avoid a significant break in the shape of the equivalent resonator of two adjacent cells. This reduces the parasites formed in the beam reflected by the reflective surface.
  • the electrical dimensions of the equivalent resonator depend on the length and / or the electrical width of the slots 202 and 203. Calculation and control means adapted to control the variable localized loads of the cells of the reflective surface allow to configure the desired phase shift.
  • there is no loopback of the equivalent resonator shape in other words, the 360 ° phase shift range can start and end with two different configurations.
  • the phase-shifting cell behaves with respect to the incident wave, as a parallel LC circuit 501.
  • the equivalent diagram is presented in figure 5b .
  • the phase-shifting cell behaves with respect to the incident wave, like a series LC 502 circuit.
  • the ground plane separated from the conductive surface on the front face can be represented by a transmission line 504. .
  • the double resonance phase shifter cell can be likened to two parallel LC circuits 503, 505 placed in series.
  • the cell can be placed in a "slot" mode as illustrated in FIG. figures 5a and in the configurations 402, 403, 404, 405 of the figure 4 or in a "patch” mode, as illustrated in figure 5b and in the configurations 406, 407, 408, 409, 401.
  • the phase-shifting cell according to the invention provides a significant advantage over a phase-shifting cell of the prior art, based on a single resonance (slit or microstrip type).
  • a phase-shifting cell of the prior art it is necessary to make a 360 ° excursion by modifying the only parameters of the electric length and width of the resonator. This constraint leads to very resonant behaviors.
  • the resonance stresses are significantly reduced, and it is thus possible to significantly widen the bandwidth of the phase-shifter cell.
  • the figure 5c represents an equivalent diagram of the phase-shifting cell according to the invention. Depending on the configuration of the reconfigurable charges of the cell, it can adopt a behavior close of the "slot" configuration illustrated in figure 5a , or a behavior close to the "microstrip” configuration illustrated in figure 5b .
  • the figure 6a and the figure 6b represent phase shifters according to the invention with capacitive MEMS.
  • the figure 6a represents the case where the interconnection slots 640 are lightly charged and the capacitive loads of the slots 650 are varied.
  • the cell in such a configuration is equivalent to a slot-type resonator whose length and electrical width would be varied.
  • the figure 6b represents the case where the interconnection slots 640 are capacitively charged and the capacitive loads of the slots are varied.
  • the cell in such a configuration is equivalent to a "microstrip" resonator whose length and electrical width would be varied.
  • the radiant phase-shifter cell 700 is of rectangular shape with four first slots 702 and 703 and four second slots 704.
  • Two first slots 702 and 703, interconnected by two second slots 704, are positioned in a first half of the conductive surface 708.
  • the two other first slots 702 and 703, interconnected by the other two second slots 704, are positioned in the second half of the conductive surface of the patch.
  • the first slots 702 and 703 have a physical width advantageously chosen to be of the same order as that of the intermediate metal strips 707. Nevertheless, according to other embodiments, the widths of the slots 702 and 703 and the intermediate metal strips 707 can be different.
  • the phase-shifter cell 700 of the figure 7 is particularly suitable for the reflection of linear polarized incident waves.
  • a portion 705 of the conductive layer separates the first slots 702 and 703 from the upper half of the first slots 702 and 703 of the lower half of the patch.
  • the routing of the control signals to the microswitches arranged on a phase-shifting cell is also a problem. This routing must not disturb the radiation of the reflector network.
  • the invention also proposes an answer to the resolution of this problem.
  • control information is transmitted for example digitally to a specialized integrated circuit (ASIC) 801 placed near the variable loads controlled on the rear face 810 of the antenna panel.
  • ASIC specialized integrated circuit
  • This circuit transforms the information received into a control signal adapted for each controlled load.
  • a difficulty therefore consists in routing these control signals from the rear face to each load located on the front face 820 of the reflector network, by not disturbing the electromagnetic operation of the radiating cells.
  • the panel consists of a multilayer dielectric substrate on which is shown on the front face of the radio frequency (RF) chips, comprising the metallic pattern of the cell, and the MEMS.
  • RF radio frequency
  • These RF chips are then called monolithic, and for example made of quartz, fused silica or alumina.
  • the dielectric substrate for example in RO 4003, carries out the spacer function between the RF chips 803 and the ground plane, and carries out the traverses of the control signals towards the DC chips reported on the rear face of the substrate.
  • the routing of the control signals on the front panel is then performed within the RF chips.
  • the microelectronic methods can be used to make the resistive lines, at least in sections, where these lines intersect slots.
  • the panel consists of a multilayer dielectric substrate on which is engraved the metal pattern 851 of the cell, and on which are reported MEMS 853 components. This is a hybrid concept.
  • vias 901 commands at the periphery of the cell (in the frame 908), or in its center, without fundamentally altering its operation.
  • the periodic arrangement of peripheral metal bushings may have the same effect as a metallic peripheral wall connecting the frame 908 and the ground plane.
  • Several of these vias can then be used to route control signals from the back to the front.
  • a control via 902 can therefore also be implemented here. When this via is used for the control, it must be isolated from the pattern to avoid any risk of electrical short circuit.
  • a difficulty then consists in routing on the front face this control signal without altering the operation of the phase-shifting cell.
  • the technology makes it possible to produce very resistive lines (typically 10 k ⁇ /)
  • the commands can be conveyed to the MEMS without particular precautions.
  • the control tracks can for example pass through resonant slots without altering their behavior.
  • the command line may be resistive by section, these sections corresponding to the penetrations of the slots.
  • the figure 10 presents another embodiment of a radiant phase-shifting cell according to the invention.
  • the cell comprises a plurality of conductive elements 1001, 1002 in the form of, for example, printed patterns on a dielectric substrate.
  • the cell comprises a central conductive element 1001 and four peripheral conductive elements 1002 placed around this first conductive element 1001, the centers of the four peripheral conductive elements 1002 forming a square in the center of which the central conductive element 1001 is placed.
  • interconnection 1004 are interposed between each of the conductive elements 1001, 1002.
  • the conductive elements 1001, 1002 are connected with the interconnecting conductive elements 1004 by variable and controlled capacitive loads 1006.
  • a conductive element 1001 does not, on its own, create a resonant mode. It is the interconnection of these conductive elements that can make it possible to establish such a mode.
  • each conductive element has a cross-shaped pattern with four orthogonal branches, so that for aligned conductive elements, the ends of the branches of the crosses belonging to two adjacent crosses are close and easily connectable by an interconnecting conductive element 1004.
  • Variable and controlled capacitive loads 1005 are arranged in interface between the interconnecting conductor elements 1004 and the ends of the branches of the crosses forming the conductive elements 1001, 1002.
  • the figure 11 illustrates a plurality of configurations taken successively by the same phase-shifting cell as that presented in FIG. figure 10 .
  • a first configuration 1101 the cell behaves like a solid metal patch. All conductive elements are connected by capacitive loads.
  • This first configuration 1101 may, for example, be used to effect a phase shift of the incident wave around 180 °.
  • a second configuration 1102 the central capacitive charges 1110 - those which in the example are placed in interface between the central conductive element and the interconnecting conductive elements - are reduced, so that the cell behaves like an opening in the plane of mass, in other words, like an annular cleft 1150.
  • the cell has an inductive behavior.
  • This second configuration 1102 may correspond to a phase shift progressively moving away from 180 ° to reach, for example, about 80 ° when the central capacitors are totally discharged.
  • a third configuration 1103 the peripheral capacitive loads 1120 - i.e. those which in the example are interfaced between the peripheral conductive elements and the interconnecting conductive elements - are decreased, so that the behavior inductive is attenuated in favor of a capacitive behavior of the radiating cell.
  • This third configuration 1103 may correspond to a phase shift variation of between 80 ° (second configuration 1102) and -20 ° when the peripheral capacitors have totally discharged.
  • a fourth configuration 1104 the central capacitive loads 1110 are increased, while the peripheral capacitive loads are still discharged.
  • the cell has, in this fourth configuration 1104, a capacitive behavior.
  • This fourth configuration 1104 may correspond to a phase shift variation of between -20 ° and -50 °.
  • a fifth configuration 1105 the central capacitive loads are increased until the state of the first configuration 1101 is restored, this configuration being able to correspond, in the example, to a phase shift applied to the incident signal between -50 ° and -180. °.
  • the cell returns to its initial state corresponding to a solid metal patch.
  • the figure 12 illustrates means for routing the control signals to a phase-shifting cell such as that of the figure 10 .
  • Vias 1210 are made at the centers of the crosses forming the conductive elements.
  • the routing of commands can be done at a level below the surface of the cell.
  • phase-shifting cell according to the invention has several advantages with regard to the solutions of the state of the art.
  • a first advantage is that the phase-shifting cell is able to have two complementary resonances, a first resonance with a slot-like equivalent resonator and a second resonance with a patch-type equivalent resonator. This makes it possible to avoid the presence of highly resonant modes, and thus to limit the sensitivity of the cells to frequency variations. The phase value thus evolves much more linearly as a function of the frequency of the source signal, thus avoiding sudden phase jumps.
  • the phase-shifter cell according to the invention is usable over a wider frequency band (for example 30% band).
  • a second advantage is the reduction of parasitic effects of a reflector network as described in the patent application.
  • FR 0450575 because there is no strong break between two adjacent cells constituting the reflector array. This is possible thanks to the possibility of covering a 360 ° phase shift range by a variable localized load control cycle making it possible to minimize the frequency variation of the phase.
  • the invention it is possible to design a reflector network for an antenna whose surface is covered with radiating phase-shifting cells according to the invention. These are controlled to introduce a selected phase shift on an incident wave, each of the adjacent cells is controlled so that the equivalent resonator is in a configuration close to that of an adjacent cell.
  • the invention applies in particular to reflector array antennas on mobile equipment, such as for example a telecommunication satellite antenna.
  • the cell can be used in satellite panels for use in Ku-band or Ka-band both in transmission and reception.
  • the phase-shifter cells according to the invention can be used around 20 GHz for the emission and around 30 GHz for the reception.

Description

Le domaine de l'invention est celui des cellules déphaseuses rayonnantes reconfigurables. Elle s'applique notamment aux réseaux réflecteurs pour une antenne destinée à être montée sur un engin spatial tel qu'un satellite de télécommunication ou sur un terminal terrestre pour les systèmes de télécommunication ou de diffusion par satellite.The field of the invention is that of reconfigurable radiative phase-shifting cells. It applies in particular to reflector networks for an antenna intended to be mounted on a spacecraft such as a telecommunications satellite or on a terrestrial terminal for telecommunication or satellite broadcasting systems.

Une antenne réseau réflecteur (« reflectarray antenna » en anglais) comporte un ensemble de cellules déphaseuses rayonnantes assemblées en réseau à une ou deux dimensions et formant une surface réfléchissante permettant d'augmenter la directivité et le gain de l'antenne. Les cellules déphaseuses rayonnantes du réseau réflecteur, de type pastilles métalliques (également appelées « patchs métalliques ») et/ou de type fente, sont définies par des paramètres pouvant varier d'une cellule à l'autre, ces paramètres étant par exemple, les dimensions géométriques des motifs gravés (longueur et largeur des « patchs » ou des fentes) qui sont réglées de façon à obtenir un diagramme de rayonnement souhaité.A reflecting array antenna ("reflectarray antenna") comprises a set of radiant phase-shifter cells assembled in one or two-dimensional array and forming a reflective surface for increasing the directivity and gain of the antenna. The radiative phase-shifting cells of the reflector network, of the metal-pellets (also called "metal patches") and / or slot-type, are defined by parameters which can vary from one cell to another, these parameters being for example the geometric dimensions of the etched patterns (length and width of "patches" or slits) that are set to obtain a desired radiation pattern.

Les cellules déphaseuses rayonnantes peuvent être constituées par des patchs métalliques chargés de fentes rayonnantes et séparés d'un plan de masse métallique d'une distance typique comprise entre λg/10 et λg/6, où λg est la longueur d'onde guidée dans le milieu espaceur. Ce milieu espaceur peut être un matériau diélectrique, mais aussi un empilement composite réalisé par un agencement symétrique d'un séparateur de type Nid d'abeille et de peaux diélectriques de fines épaisseurs. Pour qu'une antenne soit performante, il faut que la cellule élémentaire puisse contrôler précisément le déphasage qu'elle produit sur une onde incidente, pour les différentes fréquences de la bande passante. Il faut également que le procédé de fabrication du réseau réflecteur soit le plus simple possible.The radiative phase-shifting cells may consist of metal patches charged with radiating slots and separated from a metal mass plane of a typical distance between λg / 10 and λg / 6, where λg is the guided wavelength in the spacer medium. This spacer medium may be a dielectric material, but also a composite stack produced by a symmetrical arrangement of a honeycomb type separator and dielectric skins of thin thicknesses. For an antenna to be efficient, it is necessary that the elementary cell can precisely control the phase shift it produces on an incident wave, for the different frequencies of the bandwidth. It is also necessary that the manufacturing process of the reflector network is as simple as possible.

Pour cela, la demanderesse a déposé par le passé une première demande de brevet français FR 0450575 intitulée « cellule déphaseuse à polarisation linéaire et à longueur résonante variable au moyen de commutateurs mems ». La figure 1 représente un mode de réalisation de ce type de cellule déphaseuse CD. Son principe de fonctionnement consiste à modifier la longueur électrique de la fente FP en plaçant une ou plusieurs charges localisées variables et commandées DC' dans plusieurs états différents permettant et interdisant l'établissement d'un court-circuit. La variation de la longueur résonante caractéristique de la cellule permet de modifier le déphasage des ondes à réfléchir. Pour une antenne, les ondes proviennent de la source RF. Une cellule selon la figure 1 comprend un substrat SB comportant une face arrière solidarisée à un plan de masse.For this, the plaintiff filed in the past a first French patent application FR 0450575 entitled "phase-shifting cell to linear polarization and resonant variable length by means of "mems" switches. The figure 1 represents an embodiment of this type of CD phase shifter cell. Its operating principle consists in modifying the electrical length of the slot FP by placing one or more variable localized and controlled loads DC 'in several different states allowing and preventing the establishment of a short circuit. The variation of the characteristic resonant length of the cell makes it possible to modify the phase shift of the waves to be reflected. For an antenna, the waves come from the RF source. A cell according to the figure 1 comprises a substrate SB having a rear face secured to a ground plane.

Cette cellule déphaseuse ne fonctionne que pour une seule polarisation linéaire de l'onde incidente. En outre, la taille de la cellule est relativement importante, de l'ordre de 0.7 λ, où λ désigne la longueur d'onde. La maille du réseau réflecteur, c'est à dire la périodicité spatiale selon laquelle les cellules sont agencées en réseau, est donc très supérieure à 0.5 λ. Il en résulte un comportement non optimal pour des incidences très obliques de l'onde, liée à la possibilité d'excitation d'un mode de Floquet d'ordre supérieur. Cet effet se traduit par une dégradation des lobes secondaires du diagramme de rayonnement, également désigné par l'homme du métier comme le « lobe image ».This phase-shifting cell only works for a single linear polarization of the incident wave. In addition, the size of the cell is relatively large, of the order of 0.7 λ, where λ denotes the wavelength. The mesh of the reflective network, ie the spatial periodicity according to which the cells are arranged in a network, is therefore much greater than 0.5λ. This results in a non-optimal behavior for very oblique incidences of the wave, related to the possibility of excitation of a mode of Floquet higher order. This effect results in degradation of the secondary lobes of the radiation pattern, also designated by the person skilled in the art as the "image lobe".

La cellule déphaseuse fonctionne principalement comme une résonance de type « Patch », modulée par la longueur électrique de la fente ou des fentes. La réalisation d'un cycle de phase supérieur à 360° par la modulation de cette seule résonance est un point critique, et certains états de phase sont réalisés par des configurations très résonantes de la cellule déphaseuse. Ces configurations très résonantes sont également caractérisées par des plus fortes pertes, ainsi que des plus fortes sensibilités des caractéristiques électriques aux incertitudes de fabrication de la cellule et des charges localisées variables et commandées.The phase shifter cell functions primarily as a "patch" type resonance, modulated by the electrical length of the slot or slots. The realization of a phase cycle greater than 360 ° by the modulation of this single resonance is a critical point, and certain phase states are made by very resonant configurations of the phase-shifter cell. These highly resonant configurations are also characterized by higher losses, as well as higher sensitivities of electrical characteristics to manufacturing uncertainties of the cell and variable and controlled localized loads.

La demanderesse a déposé une deuxième demande de brevet français intitulée « Réseau réflecteur à arrangement optimisé et antenne comportant un tel réseau réflecteur». Il présente un cycle de phase réalisé par des cellules déphaseuses ayant une structure interne progressivement évolutive d'une cellule déphaseuse à une autre cellule déphaseuse adjacente, et ainsi n'introduisant pas de fortes ruptures de périodicité sur la surface réfléchissante. Ce type de cellule permet ainsi d'éviter, dans le diagramme de rayonnement, les perturbations induites par un phénomène de diffraction parasite sur des zones à rupture brusque de périodicité. La figure 1 bis représente un exemple de motif périodique comportant un arrangement à une dimension de plusieurs éléments rayonnants élémentaires et permettant d'obtenir une rotation de phase de 360°. Il présente la propriété d'avoir les cellules déphaseuses extrêmes du cycle de phase identiques. Un cycle de phase progressif a été également proposé à partir d'une cellule déphaseuse avec des charges localisées variables et commandées.The Applicant filed a second French patent application entitled "Optimally Arranged Reflector Network and Antenna With Such Reflector Network". It presents a phase cycle carried out by phase-shifting cells having a progressively progressive internal structure from a phase-shifting cell to another phase-shifting cell. adjacent, and thus not introducing strong ruptures of periodicity on the reflecting surface. This type of cell thus makes it possible to avoid, in the radiation pattern, the disturbances induced by a parasitic diffraction phenomenon on areas with sudden rupture of periodicity. The figure 1 bis represents an example of a periodic pattern comprising a one-dimensional arrangement of a plurality of elementary radiating elements and making it possible to obtain a phase rotation of 360 °. It has the property of having the same extreme phasing cells of the phase cycle. A progressive phase cycle has also been proposed from a phase-shifting cell with variable and controlled localized loads.

La figure 2 présente le schéma d'une cellule déphaseuse rayonnante pour un tel réseau réflecteur. Cette cellule déphaseuse est, selon un mode de réalisation, en forme de croix à deux branches perpendiculaires. La croix comporte trois fentes annulaires concentriques 81, 82 et 83 pratiquées dans un patch métallique. Des charges localisées variables et commandées 85 sont disposées de façon choisie dans les fentes et permettent de faire varier la longueur électrique des fentes et donc la phase d'une onde réfléchie par la cellule déphaseuse. A partir de plusieurs cellules, il est possible de réaliser sur la surface d'un réflecteur un motif à variation de phase progressive et ne comportant pas de transition brutale, en utilisant plusieurs éléments rayonnants ayant la même géométrie, le même nombre de MEMS positionnés au même endroit dans les fentes annulaires, mais des MEMS configurés dans des états différents. Par exemple, avec un motif constitué de plusieurs éléments rayonnants en forme de croix ou d'hexagone, munis de trois fentes annulaires concentriques et de MEMS dans chaque fente, il est possible de faire varier progressivement la phase jusqu'à 1000° en court-circuitant progressivement les différentes fentes des éléments rayonnants adjacents jusqu'à obtenir un élément rayonnant ayant tous ses MEMS à l'état fermé, puis sur plusieurs éléments adjacents additionnels, à progressivement mettre les MEMS à l'état ouvert jusqu'à obtenir un élément rayonnant ayant tous ses MEMS à l'état ouvert.The figure 2 presents the diagram of a radiant phase-shifting cell for such a reflector grating. This phase-shifting cell is, according to one embodiment, in the form of a cross with two perpendicular branches. The cross has three concentric annular slots 81, 82 and 83 made in a metal patch. Variable localized and controlled loads 85 are arranged in a chosen manner in the slots and make it possible to vary the electrical length of the slots and therefore the phase of a wave reflected by the phase-shifting cell. From several cells, it is possible to produce on the surface of a reflector a pattern with progressive phase variation and not having a sudden transition, by using several radiating elements having the same geometry, the same number of MEMS positioned at same place in the annular slots, but MEMS configured in different states. For example, with a pattern consisting of several cross-shaped or hexagonal radiating elements, provided with three concentric annular slots and MEMS in each slot, it is possible to progressively vary the phase up to 1000 ° in short. progressively circulating the different slots of the adjacent radiating elements to obtain a radiating element having all its MEMS in the closed state, then on several additional adjacent elements, to gradually put the MEMS in the open state until a radiating element is obtained having all his MEMS in the open state.

S'il est possible de réaliser un cycle de phase supérieur à 360°, et ayant la même cellule déphaseuse initiale et finale du cycle, il est très difficile d'obtenir ces états de phases avec des cellules peu résonantes. Un grand nombre de modes résonants peuvent être potentiellement excités, du fait de la présence de plusieurs résonateurs. L'apparition de ces modes résonants peut conduire à une variation brusque de la phase en fonction de la fréquence. Les variations rapides de la phase se traduisent par des pertes significatives en particulier lorsque des MEMS ohmiques sont utilisés et en une sensibilité aux dispersions de fabrication des MEMS.If it is possible to carry out a phase cycle greater than 360 °, and having the same initial and final phase-shifting cell of the cycle, it is very difficult to obtain these phase states with poorly resonant cells. A large number of resonant modes may be potentially excited, due to the presence of several resonators. The appearance of these resonant modes can lead to a sudden variation of the phase as a function of frequency. Rapid phase changes result in significant losses especially when ohmic MEMS are used and sensitivity to MEMS fabrication dispersions.

Un objectif de l'invention est de proposer une cellule déphaseuse à charges localisées variables et commandées (micro-commutateurs) permettant de couvrir une plage de déphasage avec une variation fréquentielle réduite de la phase, autrement dit avec un comportement plus linéaire, plus stable de la phase en fonction de la fréquence du signal incident. Autrement dit, un objectif de l'invention est de minimiser le caractère résonant de la cellule.An object of the invention is to propose a variable phase and controlled localized phase shifter cell (microswitches) making it possible to cover a range of phase shift with a reduced frequency variation of the phase, in other words with a more linear, more stable behavior of the phase according to the frequency of the incident signal. In other words, an object of the invention is to minimize the resonant nature of the cell.

A cet effet, l'invention a pour objet une cellule déphaseuse rayonnante comprenant une pluralité d'éléments conducteurs formés en surface d'un substrat, au-dessus et à distance d'un plan de masse, lesdits éléments conducteurs étant séparés par des fentes, l'agencement des fentes formant un résonateur équivalent dont la forme électrique configure le déphasage appliqué sur une onde à réfléchir, caractérisée en ce que la cellule comprend des charges variables commandées aptes à faire varier la longueur et/ou la largeur électrique desdites fentes, les éléments conducteurs et les charges variables commandées sont agencés pour que selon au moins une première configuration desdites charges, une surface conductrice de signaux hyperfréquences soit formée afin de créer un résonateur à dominance inductive, et pour que selon au moins une deuxième configuration, une fente soit formée autour d'au moins un élément conducteur afin de créer un résonateur à dominance capacitive, ladite surface conductrice formée dans la première configuration entourant ledit élément conducteur autour duquel une fente est formée dans la deuxième configuration.For this purpose, the subject of the invention is a radiant phase-shifting cell comprising a plurality of conductive elements formed on the surface of a substrate, above and away from a ground plane, said conductive elements being separated by slots , the arrangement of the slots forming an equivalent resonator whose electrical shape configures the phase shift applied on a wave to be reflected, characterized in that the cell comprises controlled variable loads able to vary the length and / or the electrical width of said slots, the conductive elements and the variable loads controlled are arranged so that, according to at least a first configuration of said charges, a conductive surface of microwave signals is formed in order to create an inductively dominant resonator, and so that, according to at least one second configuration, a slot is formed around at least one conductive element to create a resonator dominated said capacitive surface, said conductive surface formed in the first configuration surrounding said conductive element around which a slot is formed in the second configuration.

La gestion des résonances des fentes et des résonateurs de type microruban est réalisée de sorte à exciter plutôt une résonance équivalente de type « fentes » dans un première partie du cycle de phase, et plutôt résonance équivalente de type « microruban » (qualifié aussi de « patch ») dans une seconde partie du cycle de phase. La première partie du cycle de phase correspond à un résonateur dont le comportement prédominant est inductif, autrement dit, dont le résonateur équivalent est davantage celui d'un résonateur LC parallèle que celui d'un LC série. La deuxième partie du cycle de phase correspond à un résonateur dont le comportement prédominant est capacitif, autrement dit, dont le résonateur équivalent est davantage celui d'un résonateur LC série que celui d'un LC parallèle.The management of the resonances of the slots and the resonators of the microstrip type is carried out so as to rather excite an equivalent resonance of the "slits" type in a first part of the phase cycle, and rather equivalent resonance of the "microstrip" type (also called "microstrip"). patch ") in a second part of the phase cycle. The first part of the cycle phase corresponds to a resonator whose predominant behavior is inductive, in other words, whose equivalent resonator is more that of a parallel LC resonator than that of a serial LC. The second part of the phase cycle corresponds to a resonator whose predominant behavior is capacitive, that is, whose equivalent resonator is more that of a series LC resonator than that of a parallel LC.

Les résonateurs équivalents de la cellule déphaseuse à charges localisées variables et commandées peuvent décrivent un cycle semblable à celui présenté en figure 1bis. Cette propriété permet, par exemple, de réaliser un cycle de phase supérieur à 360°, et d'avoir des résonateurs équivalents semblables pour les valeurs extrêmes du cycle de phase.The equivalent resonators of the variable and controlled localized phase-shifting cell can describe a cycle similar to that presented in figure 1bis . This property makes it possible, for example, to perform a phase cycle greater than 360 °, and to have similar equivalent resonators for the extreme values of the phase cycle.

Cette propriété permet également d'optimiser la bande passante des cellules déphaseuses. La gamme de phase de 360°, par exemple, peut en effet être segmentée en deux sous-gammes d'environ 180°. Cette segmentation en deux sous gammes est rendue possible par la complémentarité des modes résonants de type fente ou patch.This property also makes it possible to optimize the bandwidth of the phase-shifting cells. The phase range of 360 °, for example, can indeed be segmented into two sub-ranges of about 180 °. This segmentation into two sub-ranges is made possible by the complementarity of the resonant modes of slot or patch type.

La minimisation de la résonance se traduit par des moindres pertes. Plus la phase varie de façon linéaire, plus cette caractéristique s'obtient sur une large bande (par opposition à un fonctionnement de type seuil). Des bandes passantes de l'ordre de 30% peuvent être obtenues grâce à la cellule selon l'invention.Minimizing the resonance results in lower losses. The more the phase varies in a linear fashion, the more this characteristic is obtained over a wide band (as opposed to a threshold type operation). Bandwidths of the order of 30% can be obtained thanks to the cell according to the invention.

L'arrangement périodique de la cellule déphaseuse rayonnante selon l'invention définit un panneau réflecteur d'un montage d'antenne. Le montage peut, en outre, comporter plusieurs panneaux réflecteurs comportant des cellules déphaseuses selon l'invention.The periodic arrangement of the radiant phase shifter cell according to the invention defines a reflector panel of an antenna assembly. The assembly may, in addition, comprise a plurality of reflector panels comprising phase-shifting cells according to the invention.

Avantageusement, la surface conductrice en face avant, est séparée du plan de masse par une distance égale au quart de la longueur d'onde du signal incident. De cette manière, les résonances en mode fente (première configuration) et en mode microruban (deuxième configuration) peuvent être séparées de 180°.Advantageously, the conductive surface on the front face is separated from the ground plane by a distance equal to a quarter of the wavelength of the incident signal. In this way, the resonances in slot mode (first configuration) and in microstrip mode (second configuration) can be separated by 180 °.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, l'élément conducteur autour duquel une fente est formée dans la deuxième configuration est situé sensiblement au centre de la cellule, les éléments conducteurs formant la surface conductrice étant situés en périphérie, ladite surface conductrice étant annulaire, chacun desdits conducteurs périphériques étant reliés au conducteur central et aux conducteurs périphériques voisins par l'intermédiaire de charges capacitives commandées. Par « annulaire », on entend une fente en forme de boucle fermée. Celle-ci est formée par l'interconnexion de différents éléments conducteurs périphériques. Sa forme peut être, par exemple, rectangulaire, circulaire, hexagonale ou tout autre forme polygonale, ou courbe fermée.According to one embodiment of the radiative phase-shifter cell according to the invention, the conductive element around which a slot is formed in the second configuration is located substantially in the center of the cell, the conductive elements forming the conductive surface being located at the periphery, said conductive surface being annular, each of said peripheral conductors being connected to the central conductor and neighboring peripheral conductors via controlled capacitive loads. By "annular" is meant a slot shaped closed loop. This is formed by the interconnection of different peripheral conductive elements. Its shape may be, for example, rectangular, circular, hexagonal or any other polygonal shape, or closed curve.

Les éléments conducteurs peuvent prendre une forme de croix à quatre branches alignées selon plusieurs rangées, les croix appartenant à deux rangées successives étant décalées les unes par rapport aux autres, les croix étant reliées par l'intermédiaire de charges capacitives variables commandées. La forme des éléments conducteurs peut être différente, par exemple, des patchs carrés, des zones en forme de disque. Un avantage des éléments conducteurs en forme de croix est qu'ils permettent des interconnexions plus aisées.The conductive elements may take the form of a cross with four branches aligned in several rows, the crosses belonging to two successive rows being offset relative to each other, the crosses being connected via controlled variable capacitive loads. The shape of the conductive elements may be different, for example, square patches, disc-shaped areas. An advantage of the cross-shaped conductive elements is that they allow easier interconnections.

Selon un autre mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, ladite surface conductrice annulaire est formée par des rubans conducteurs encadrés par des fentes annulaires lesdits rubans étant reliés par des charges capacitives aptes à modifier la longueur et/ou la largeur électrique de fentes d'interconnexion desdites fentes annulaires.According to another embodiment of the radiative phase-shifting cell according to the invention, said annular conductive surface is formed by conducting ribbons framed by annular slots, said ribbons being connected by capacitive charges able to modify the length and / or the electrical width. interconnecting slots of said annular slots.

En d'autres termes, la cellule peut comprendre une surface conductrice dans laquelle sont formées au moins deux premières fentes sensiblement concentriques et espacées l'une de l'autre, la surface conductrice étant disposée au-dessus d'un plan de masse, l'agencement des fentes formant un résonateur équivalent dont la forme électrique configure le déphasage appliqué à une onde incidente, la cellule étant caractérisée en ce qu'elle comprend des fentes d'interconnexion reliant lesdites premières fentes entre-elles, et une pluralité de charges variables commandées aptes à faire varier la longueur et/ou la largeur électrique desdites premières fentes et desdites fentes d'interconnexion, lesdites charges étant activables pour configurer la cellule selon un résonateur sensiblement équivalent à un circuit LC parallèle, lesdites charges étant également activables selon au moins une autre configuration pour configurer la cellule selon un résonateur sensiblement équivalent à un circuit LC série.In other words, the cell may comprise a conductive surface in which at least two first substantially concentric slots are spaced apart from one another, the conductive surface being disposed above a ground plane, arrangement of the slots forming an equivalent resonator whose electrical shape configures the phase shift applied to an incident wave, the cell being characterized in that it comprises interconnection slots connecting said first slots to each other, and a plurality of variable charges controllers adapted to vary the length and / or the electrical width of said first slots and said interconnection slots, said charges being activatable to configure the cell according to a resonator substantially equivalent to a parallel LC circuit, said charges being also activatable according to at least another configuration to configure the cell according to a substantially equivalent resonator to a LC series circuit.

Cette même cellule déphaseuse peut également être considérée comme l'agencement de résonateurs de type microruban, à savoir d'un cadre métallique, un anneau métallique intermédiaire coupé en plusieurs points, et un patch central métallique. Les connexions réalisées par des charges localisées variables et commandées - aussi qualifiées de micro actuateurs, micro-interrupteurs ou de moyens de court-circuitage - permettent de modifier la longueur et/ou la largeur électrique du résonateur microruban équivalent.This same phase-shifting cell can also be considered as the arrangement of microstrip resonators, namely a metal frame, an intermediate metal ring cut at several points, and a metal central patch. The connections made by variable and controlled localized loads - also called micro-actuators, microswitches or short-circuiting means - make it possible to modify the length and / or the electrical width of the equivalent microstrip resonator.

Selon un autre mode de réalisation de la cellule selon l'invention, la cellule comprend plus de deux fentes concentriques. Elle comprend par exemple trois fentes, avec des fentes d'interconnexion entre chaque fente concentrique successive.According to another embodiment of the cell according to the invention, the cell comprises more than two concentric slots. It comprises for example three slots, with interconnection slots between each successive concentric slot.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, lorsque la cellule est dans la première configuration, les charges reliant les éléments conducteurs périphériques entre eux sont activées, les charges reliant l'élément conducteur central aux éléments conducteurs périphériques étant désactivées, de manière à former une fente résonante dont la contribution principale équivaut à celle d'un circuit LC parallèle.According to one embodiment of the radiant phase shifter cell according to the invention, when the cell is in the first configuration, the charges connecting the peripheral conductive elements to each other are activated, the charges connecting the central conductive element to the peripheral conductive elements being deactivated. , so as to form a resonant slot whose main contribution is equivalent to that of a parallel LC circuit.

Avantageusement, les charges reliant les éléments conducteurs périphériques entre eux sont adaptées à prendre des valeurs multiples entre deux valeurs extrêmes pour pouvoir faire varier les dimensions de la fente résonante équivalente progressivement en fonction desdites valeurs.Advantageously, the charges connecting the peripheral conductive elements to each other are adapted to take multiple values between two extreme values in order to be able to vary the dimensions of the resonant slot according to said values progressively.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, lorsque la cellule est dans la deuxième configuration, les charges reliant les éléments conducteurs périphériques entre eux sont désactivées, les charges reliant l'élément conducteur central aux éléments conducteurs périphériques étant activées, de manière à former un microruban résonant dont la contribution principale équivaut à celle d'un circuit LC série.According to one embodiment of the radiative phase-shifter cell according to the invention, when the cell is in the second configuration, the charges connecting the peripheral conductive elements to each other are deactivated, the charges connecting the central conductive element to the peripheral conductive elements being activated. , so as to form a resonant microstrip whose main contribution is equivalent to that of a series LC circuit.

Avantageusement, les charges reliant l'élément conducteur central aux éléments conducteurs périphériques sont adaptées à prendre des valeurs multiples entre deux valeurs extrêmes pour pouvoir faire varier les dimensions du microruban résonant équivalent progressivement en fonction desdites valeurs.Advantageously, the charges connecting the central conductive element to the peripheral conductive elements are adapted to take multiple values between two extreme values in order to be able to vary the dimensions of the gradually equivalent resonant microstrip according to said values.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, les charges reliant l'élément conducteur central aux éléments conducteurs périphériques sont adaptées à varier indépendamment de la valeur des charges reliant les éléments conducteurs périphériques entre eux, de manière à ce que la plage de déphasage appliqué à l'onde incidente soit décomposée en deux intervalles de déphasage, les déphasages appliqués dans le premier intervalle étant obtenus avec une configuration de type fente résonante, les déphasages appliqués dans le deuxième intervalle étant obtenus avec une configuration de type microruban résonant.According to one embodiment of the radiative phase shifter cell according to the invention, the charges connecting the central conductive element to the peripheral conductive elements are adapted to vary independently of the value of the charges connecting the peripheral conductive elements to each other, so that the phase difference range applied to the incident wave is decomposed into two phase shift intervals, the phase shifts applied in the first interval being obtained with a resonant slot type configuration, the phase shifts applied in the second range being obtained with a microstrip type configuration resonant.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, les charges variables et les dimensions des éléments conducteurs sont déterminés pour que la configuration de la cellule permettant d'appliquer le déphasage correspondant à la première extrémité de la plage de déphasage est identique à la configuration de la cellule permettant d'appliquer le déphasage correspondant à la deuxième extrémité de la plage.According to one embodiment of the radiant phase-shifter cell according to the invention, the variable charges and the dimensions of the conductive elements are determined so that the configuration of the cell making it possible to apply the phase shift corresponding to the first end of the phase-shift range is identical to the configuration of the cell for applying the phase shift corresponding to the second end of the range.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, la plage de déphasage est de 360°.According to one embodiment of the radiative phase-shifting cell according to the invention, the phase-shift range is 360 °.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, les éléments conducteurs, les fentes et les charges capacitives sont disposés sur la cellule selon un centre de symétrie placé au centre de la cellule.According to one embodiment of the radiative phase-shifting cell according to the invention, the conductive elements, the slots and the capacitive charges are arranged on the cell according to a center of symmetry placed at the center of the cell.

Selon un mode de réalisation de la cellule déphaseuse rayonnante selon l'invention, les charges capacitives sont des diodes, des MEMS, ou des capacités ferroélectriques.According to one embodiment of the radiative phase-shifter cell according to the invention, the capacitive charges are diodes, MEMS, or ferroelectric capacitors.

L'invention a également pour objet un réseau réflecteur comprenant une pluralité de cellules déphaseuses rayonnantes telles que décrites plus haut, lesdites cellules formant la surface réfléchissante du réseau.The subject of the invention is also a reflector array comprising a plurality of radiative phase-shifting cells as described above, said cells forming the reflecting surface of the grating.

L'invention a également pour objet une antenne comprenant un réseau réflecteur tel que décrit plus haut.The invention also relates to an antenna comprising a reflector network as described above.

L'invention sera mieux comprise et d'autres avantages apparaîtront à la lecture de la description qui suit, donnée à titre non limitatif, et grâce aux figures annexées parmi lesquelles :

  • la figure 3, un exemple d'un schéma d'architecture mécanique et de positionnement de charges localisées variables et commandées d'une cellule déphaseuse rayonnante selon l'invention, en vue de face du plan de rayonnement de la cellule ;
  • la figure 4, un exemple d'un cycle de cellules déphaseuses rayonnantes selon l'invention couvrant une plage de déphasage de 360°; la figure représente un exemple d'agencement de l'architecture mécanique et de la configuration des charges localisées variables et commandées pour chaque cellule déphaseuse du cycle ;
  • la figure 5a, une représentation du résonateur équivalent lorsque la cellule déphaseuse selon l'invention est en mode de résonance « fente » ;
  • la figure 5b, une représentation du résonateur équivalent lorsque la cellule déphaseuse selon l'invention est en mode de résonance « microruban » ;
  • la figure 5c, un modèle électrique de la cellule déphaseuse selon l'invention ;
  • les figures 6a et 6b, des cellules déphaseuses selon l'invention à MEMS capacitifs ;
  • la figure 7, un autre mode de réalisation de la cellule déphaseuse selon l'invention ;
  • la figure 8a, une illustration d'un premier type de dispositif de commande des charges variables utilisées pour reconfigurer la cellule déphaseuse selon l'invention ;
  • la figure 8b, une illustration d'un deuxième type de dispositif de commande des charges variables utilisées pour reconfigurer la cellule déphaseuse selon l'invention ;
  • la figure 9, un mode de réalisation de la cellule déphaseuse selon l'invention dans laquelle des vias sont disposés pour faire transiter les signaux de commandes vers les charges capacitives variables ;
  • la figure 10, un autre mode de réalisation d'une cellule déphaseuse rayonnante selon l'invention ;
  • la figure 11, une pluralité de configurations prises successivement par une même cellule déphaseuse telle que celle présentée en figure 10 ;
  • la figure 12, un exemple de moyens d'acheminement des signaux de commande vers une cellule déphaseuse telle que celle de la figure 10.
The invention will be better understood and other advantages will appear on reading the description which follows, given by way of non-limiting example, and by virtue of the appended figures among which:
  • the figure 3 an example of a mechanical architecture scheme and localized variable and controlled load positioning of a radiative phase shifter cell according to the invention, in front view of the radiation plane of the cell;
  • the figure 4 an example of a cycle of radiative phase shifters according to the invention covering a range of 360 ° phase shift; the figure shows an example of arrangement of the mechanical architecture and the configuration of variable and controlled localized loads for each phase-shifting cell of the cycle;
  • the figure 5a , a representation of the equivalent resonator when the phase-shifter cell according to the invention is in "slot" resonance mode;
  • the figure 5b , a representation of the equivalent resonator when the phase-shifter cell according to the invention is in "microstrip" resonance mode;
  • the figure 5c an electrical model of the phase-shifting cell according to the invention;
  • the Figures 6a and 6b phase-shifting cells according to the invention with capacitive MEMS;
  • the figure 7 another embodiment of the phase-shifter cell according to the invention;
  • the figure 8a , an illustration of a first type of variable load control device used to reconfigure the phase shifter cell according to the invention;
  • the figure 8b , an illustration of a second type of variable load control device used to reconfigure the phase shifter cell according to the invention;
  • the figure 9 , an embodiment of the phase-shifter cell according to the invention in which vias are arranged for passing the control signals to the variable capacitive loads;
  • the figure 10 another embodiment of a radiant phase-shifting cell according to the invention;
  • the figure 11 , a plurality of configurations successively taken by the same phase-shifting cell as that presented in FIG. figure 10 ;
  • the figure 12 , an example of means for routing the control signals to a phase-shifting cell such as that of the figure 10 .

La figure 3 présente un mode de réalisation d'une cellule déphaseuse rayonnante 200 selon l'invention. La cellule 200 comporte une structure planaire telle que décrit dans les cellules déphaseuses de l'état de la technique et la figure 3 représente la vue de face de la structure planaire. Typiquement une structure planaire comprend un substrat comportant une face arrière solidarisée à un plan de masse et une face avant. Les matériaux utilisés pour former le substrat, les couches de diélectrique et les couches conductrices ne limitent pas la portée de l'invention. On peut citer par exemple, les matériaux nommés dans les documents de l'état de la technique décrit précédemment.The figure 3 presents an embodiment of a radiant phase shifter cell 200 according to the invention. The cell 200 comprises a planar structure as described in the phase-shifting cells of the state of the art and the figure 3 represents the front view of the planar structure. Typically a planar structure comprises a substrate having a rear face secured to a ground plane and a front face. The materials used to form the substrate, the dielectric layers and the conductive layers do not limit the scope of the invention. For example, mention may be made of the materials named in the documents of the state of the art described above.

La cellule déphaseuse 200 est préférablement de forme rectangulaire. Toutefois, d'autres modes de réalisation sont possibles et on peut citer à titre d'exemple non limitatif une surface en forme hexagonale ou en forme circulaire.The phase shifter cell 200 is preferably of rectangular shape. However, other embodiments are possible and may be mentioned by way of non-limiting example a hexagonal shaped surface or circular shape.

La cellule comporte au moins deux premières fentes, une première fente 202 et une deuxième fente 203 concentriques. La première fente 202 est positionnée en périphérie extérieure par rapport à la seconde fente 203, c'est-à-dire à une distance plus élevée du centre du patch par rapport à la seconde fente 203. La cellule déphaseuse 200 peut comporter deux fentes 202 et 203 ou plus, comme illustré sur la figure 3. De préférence, les fentes 202 et 203 ont une forme s'étendant longitudinalement à la forme du cadre métallique 201. Ainsi, les fentes 202 positionnées en périphérie extérieure du patch entourent les fentes 203 en périphérie intérieure. Si les cellules déphaseuses sont destinées à fonctionner pour une seule polarisation linéaire, il est possible de court-circuiter au moyen de jonctions métalliques 705 les fentes concentriques en un point ou le champ électrique est nul, comme illustré en figure 7. Cette possibilité n'est pas offerte lorsque la cellule est destinée à fonctionner en double polarisation linéaire, car à l'endroit où le champ électrique est nul dans la fente concentrique pour une polarisation linéaire, il est maximal pour l'autre polarisation linéaire orthogonale. La périphérie 201 de la cellule est séparée de la fente concentrique extérieure 202 par une bande conductrice 208, également désigné par le terme « cadre ».The cell comprises at least two first slots, a first slot 202 and a second slot 203 concentric. The first slot 202 is positioned at the outer periphery with respect to the second slot 203, that is to say at a greater distance from the center of the patch relative to the second slot 203. The phase-shifter cell 200 may comprise two slots 202 and 203 or more, as illustrated on the figure 3 . Preferably, the slots 202 and 203 have a shape extending longitudinally to the shape of the metal frame 201. Thus, the slots 202 positioned at the outer periphery of the patch surround the slots 203 at the inner periphery. If the phase-shifting cells are intended to operate for a single linear polarization, it is possible to short-circuit the concentric slots at a point where the electric field is zero, as shown in FIG. figure 7 . This possibility is not available when the cell is intended to operate in double linear polarization, because at the point where the electric field is zero in the concentric slot for a linear polarization, it is maximum for the other linear polarization orthogonally. The periphery 201 of the cell is separated from the outer concentric slot 202 by a conductive strip 208, also known as the "frame".

Les fentes 202 et 203 sont reliées par au moins quatre fentes d'interconnexion 204. Cet agencement de fentes définit des rubans métalliques 207 placés en interface entre les fentes concentriques 201, 202. En outre, des charges localisées variables et commandées 206 sont disposées à des endroits choisis sur les premières fentes 202 et 203, ainsi que sur les fentes d'interconnexion 204. Il s'agit par exemple de commutateurs on/off permettant de réaliser des courts-circuits, ou de charges capacitives variables. Les commutateurs ont pour but de modifier la longueur et/ou la largeur électrique du résonateur « fente » équivalent ou du résonateur « microruban » équivalent.The slots 202 and 203 are connected by at least four interconnection slots 204. This slot arrangement defines metal strips 207 placed in interface between the concentric slots 201, 202. In addition, localized variable and controlled loads 206 are arranged at selected locations on the first slots 202 and 203, and on the interconnection slots 204. These are for example on / off switches for making short circuits, or variable capacitive loads. The purpose of the switches is to change the length and / or electrical width of the equivalent "slot" resonator or equivalent "microstrip" resonator.

Selon l'invention, les différentes charges localisées variables et commandées 206 de la cellule déphaseuse sont commandées pour configurer la longueur et/ou la largeur électrique des premières fentes 202 et 203 de sorte que le résonateur équivalent de la cellule déphaseuse agisse comme une cellule déphaseuse introduisant un déphasage choisi sur une onde incidente. La variation de la longueur électrique des fentes interconnectées 202, 203 et 204 modifie les dimensions électriques du résonateur fente ou patch équivalent. Ainsi, grâce aux charges localisées variables et commandées 206, il est possible d'obtenir une cellule déphaseuse couvrant une plage de déphasage d'au moins 360° délimitée par une première valeur extrême et par une seconde valeur extrême. Il est également possible, avantageusement, d'obtenir une cellule dont la forme électrique du résonateur équivalent est identique pour la première et pour la seconde valeur extrême. Au sein de la plage de déphasage, les valeurs de déphasage d'une même cellule peuvent varier de façon continue ou discontinue. Des moyens électroniques de commande, décrits plus loin en regard des figures 8a, 8b, et 9 sont aptes à contrôler les charges localisées variables et commandées de sorte à faire varier le déphasage de façon continue ou discontinue.According to the invention, the various variable and controlled localized loads 206 of the phase-shifting cell are controlled to configure the length and / or the electrical width of the first slots 202 and 203 so that the equivalent resonator of the phase-shifting cell acts as a phase-shifting cell. introducing a selected phase shift onto an incident wave. The variation of the electrical length of the interconnected slots 202, 203 and 204 modifies the electrical dimensions of the equivalent slot or patch resonator. Thus, thanks to the variable and controlled localized loads 206, it is possible to obtain a phase-shifting cell covering a phase shift range of at least 360 ° delimited by a first extreme value and by a second extreme value. It is also possible, advantageously, to obtain a cell whose electrical form of the equivalent resonator is identical for the first and for the second extreme value. Within the phase shift range, the phase shift values of the same cell can vary continuously or discontinuously. Electronic control means, described below with regard to figures 8a , 8b , and 9 are able to control variable localized loads and controlled so as to vary the phase shift continuously or discontinuously.

On peut distinguer notamment deux méthodes pour modifier les paramètres électriques des fentes : la première consiste à disposer des micro-commutateurs ON/OFF le long de la fente, et à faire varier la longueur de la section de la fente comprise entre deux commutateurs réalisant un court circuit (ON). Avantageusement, lorsque le plan de masse est séparé de la surface avant de l'antenne d'une épaisseur égale à un quart de la longueur d'onde guidée, alors il est possible de parcourir la totalité de la phase de 360°.In particular, two methods can be distinguished for modifying the electrical parameters of the slots: the first is to dispose of the microswitches ON / OFF along the slot, and to vary the length of the section of the slot between two switches performing a short circuit (ON). Advantageously, when the ground plane is separated from the front surface of the antenna by a thickness equal to a quarter of the guided wavelength, then it is possible to cover the entire phase of 360 °.

Selon la première méthode, les micro-commutateurs sont activés selon une progression permettant d'approcher le cycle de cellules équivalentes. Un exemple est proposé : la première cellule 401 du cycle illustré en figure 4 est celle où tous les micro-commutateurs sont à l'état bas. Le déphasage réalisé est 180°, correspondant à la réponse d'une plaque métallisée. Progressivement, à partir de la deuxième illustration de cellule 402 à la cinquième illustration de cellule 405, les micro-commutateurs sont libérés au centre de la cellule, pour réaliser un fonctionnement équivalent à une ouverture dans la plaque métallisée, dont la taille s'agrandit. Puis, à partir de la sixième illustration de cellule 406, les micro-commutateurs sont progressivement refermés depuis le centre, pour avoir un fonctionnement équivalent à celui d'un patch central qui s'agrandit, jusqu'à retrouver pour la neuvième illustration 409 une configuration identique à la première illustration de cellule 401. Avec une telle progression, le cycle parcourt un déphasage sur une plage de valeur délimitée par une première valeur extrême et par une seconde valeur extrême, avec une configuration des micro-commutateurs identique pour la première et pour la seconde valeur extrême, sans devoir assurer un fonctionnement autour d'une fréquence de résonance.According to the first method, the microswitches are activated according to a progression making it possible to approach the cycle of equivalent cells. An example is proposed: the first cell 401 of the cycle illustrated in figure 4 is where all the micro-switches are in the low state. The phase difference is 180 °, corresponding to the response of a metallized plate. Gradually, from the second cell illustration 402 to the fifth cell illustration 405, the microswitches are released in the center of the cell, to perform a function equivalent to an opening in the metallized plate, the size of which increases. . Then, starting from the sixth illustration of cell 406, the microswitches are progressively closed again from the center, to have an operation equivalent to that of a central patch which expands, until finding for the ninth illustration 409 a identical configuration to the first illustration of cell 401. With such a progression, the cycle travels a phase shift over a range of value delimited by a first extreme value and by a second extreme value, with a configuration of micro-switches identical for the first and for the second extreme value, without having to operate around a resonance frequency.

Cette première méthode de modification des paramètres électriques des fentes nécessite un nombre significatif de micro-commutateurs. Il est possible d'en réduire le nombre, et d'optimiser le cycle pour parcourir une gamme de déphasage suffisante. Toutefois, si le nombre de micro-actuateurs est significativement réduit, il ne sera pas possible d'éviter l'excitation de modes supérieurs à l'intérieur de cette cellule. Ces modes supérieurs permettent de réaliser un déphasage, mais sont souvent associés à des variations fréquentielles de la phase plus importantes. Ils peuvent aussi induire un rayonnement en polarisation croisée. Les micro-commutateurs sont des charges localisées reconfigurables, par exemple de type MEMS (acronyme Micro Electro-Mechanical System), des diodes, ou des capacités ferroélectriques variables.This first method of modifying the electric parameters of the slots requires a significant number of micro-switches. It is possible to reduce the number, and optimize the cycle to cover a range of sufficient phase shift. However, if the number of micro-actuators is significantly reduced, it will not be possible to avoid the excitation of higher modes inside this cell. These higher modes make it possible to carry out a phase shift, but are often associated with greater frequency variations of the phase. They can also induce cross polarization radiation. The micro-switches are reconfigurable localized loads, for example MEMS type (acronym for Micro Electro-Mechanical System), diodes, or variable ferroelectric capacitors.

Avantageusement, une cellule déphaseuse réalisant la même phase pour les deux polarisations linéaires est invariable par rotation. Cette propriété de symétrie évite d'exciter des modes supérieurs contribuant à la polarisation croisée, et également pouvant altérer la stabilité de la phase dans la polarisation principale. Un minimum de quatre MEMS par commande doit généralement être utilisé pour respecter cette contrainte de symétrie.Advantageously, a phase-shifting cell producing the same phase for the two linear polarizations is invariable by rotation. This property of symmetry avoids exciting higher modes contributing to the cross polarization, and also can alter the stability of the phase in the main polarization. A minimum of four MEMS per command must generally be used to respect this symmetry constraint.

Avantageusement, une cellule déphaseuse fonctionnant en double polarisation linéaire et réalisant des phases indépendantes dans chacune des polarisations linéaires possède deux symétries axiales. Cette propriété évite d'exciter des modes supérieurs contribuant à la polarisation croisée, et également pouvant altérer la stabilité de la phase dans la polarisation principale. Une telle propriété nécessite d'utiliser un minimum de deux MEMS par commande et par polarisation.Advantageously, a phase-shifting cell operating in linear double polarization and producing independent phases in each of the linear polarizations has two axial symmetries. This property avoids exciting higher modes contributing to the cross polarization, and also can alter the stability of the phase in the main polarization. Such a property requires the use of a minimum of two MEMS per command and bias.

Avantageusement, une cellule fonctionnant en simple polarisation linéaire possède deux symétries axiales. Cette propriété évite d'exciter des modes supérieurs contribuant à la polarisation croisée et pouvant également altérer la stabilité de la phase dans la polarisation principale. Une telle propriété nécessite d'utiliser un minimum de deux MEMS par commande.Advantageously, a cell operating in simple linear polarization has two axial symmetries. This property avoids exciting higher modes contributing to cross polarization and may also alter the stability of the phase in the main polarization. Such a property requires the use of a minimum of two MEMS per command.

Des modes de réalisations dégradés peuvent être aussi réalisés, par exemple dans l'objectif de réduire le nombre de MEMS, ou d'augmenter le nombre d'états de phase pour un même nombre de MEMS. Ainsi, il est possible de varier légèrement l'emplacement des MEMS autour de ces symétries, ou de moduler faiblement la valeur des capacités réalisées par ces MEMS disposés aux emplacements symétriques.Degraded embodiments can also be realized, for example with the aim of reducing the number of MEMS, or of increasing the number of phase states for the same number of MEMS. Thus, it is possible to slightly vary the location of the MEMS around these symmetries, or to modulate slightly the value of the capacitances achieved by these MEMS arranged at the symmetrical locations.

La deuxième méthode pour gérer le cycle de phase en excitant successivement un résonateur équivalent de type fente ou de type patch consiste à faire varier le chargement capacitif des fentes. Une fente est chargée par une capacité, par exemple en son centre. Ce chargement capacitif de la fente permet de faire varier la vitesse de la phase dans la fente, et ainsi modifier leur fréquence de résonance. La variation de capacité peut être effectuée à l'aide de plusieurs capacités digitales. Le concept est dérivé des lignes de transmission à chargement capacitif distribué DMTL (Distributed MEMS Transmission Line).The second method for managing the phase cycle by successively exciting a slot-like or patch-type equivalent resonator is to vary the capacitive loading of the slots. A slot is loaded by a capacity, for example at its center. This capacitive loading of the slot makes it possible to vary the speed of the phase in the slot, and thus to modify their resonance frequency. The capacity variation can be performed using several digital capabilities. The concept is derivative of distributed capacitive loading transmission lines DMTL (Distributed MEMS Transmission Line).

Un exemple de progression est présenté ci-après en regard des figures 6a et 6b. Dans une première partie du cycle de phase, illustrée en figure 6a, les fentes d'interconnexion ne sont pas chargées. Les charges capacitives des fentes concentriques sont en revanche variées. La cellule déphaseuse fonctionne de la même façon qu'une fente dont on fait varier les paramètres longueur et largeur électrique. Dans une seconde partie du cycle, illustré en figure 6b, les fentes concentriques sont non résonantes. Les charges capacitives des fentes d'interconnexion sont variées, connectant ainsi les quatre morceaux rubans 207 (cf. figure 2) de l'anneau microruban intermédiaire. La cellule déphaseuse fonctionne de la même façon qu'un résonateur microruban dont on fait varier les paramètres longueur et largeur électrique.An example of progression is presented below in relation to Figures 6a and 6b . In a first part of the phase cycle, illustrated in figure 6a , the interconnect slots are not loaded. The capacitive loads of the concentric slots, on the other hand, are varied. The phase-shifting cell operates in the same way as a slot whose length and electrical width parameters are varied. In a second part of the cycle, illustrated in figure 6b , the concentric slits are non-resonant. The capacitive loads of the interconnection slots are varied, thus connecting the four pieces of tape 207 (cf. figure 2 ) of the intermediate microstrip ring. The phase-shifting cell operates in the same way as a microstrip resonator whose length and electrical width parameters are varied.

Dans le cas où des charges capacitives variables sont employées pour court-circuiter les fentes, ces charges peuvent être réalisées au moyen d'un micro-commutateur en série avec une capacité. Les valeurs usuelles des capacités de chargement permettant de modifier les résonances fentes sont entre 20 et 200 fF pour un fonctionnement autour de 10 GHz. Néanmoins, il n'est pas toujours aisé de réaliser des capacités variables, et il est possible de faire varier la capacité par incréments digitaux. Dans ce cas, la charge est constituée de plusieurs capacités en parallèles connectées à un commutateur.In the case where variable capacitive loads are used to short-circuit the slots, these charges can be realized by means of a micro-switch in series with a capacitance. The usual loading capacity values for changing slot resonances are between 20 and 200 fF for operation around 10 GHz. Nevertheless, it is not always easy to achieve varying capacities, and it is possible to vary the capacity in digital increments. In this case, the load consists of several parallel capabilities connected to a switch.

Comme illustré en figure 4, la plage de déphasage de 360° commence et se termine optionnellement par un résonateur équivalent identique. La cellule selon l'invention peut ainsi couvrir une plage de 360° par un rebouclage de la forme du résonateur équivalent. Ainsi, une surface réfléchissante peut être constituée de plusieurs motifs périodiques, un motif étant constitué de plusieurs cellules déphaseuses adjacentes configurant chacune un déphasage proche, pour éviter une rupture importante dans la forme du résonateur équivalent de deux cellules adjacentes. Cela réduit les parasites formés dans le faisceau réfléchi par la surface réfléchissante. Les dimensions électriques du résonateur équivalent dépendent de la longueur et/ou de la largeur électrique des fentes 202 et 203. Des moyens de calculs et de commande adaptés au contrôle des charges localisées variables des cellules de la surface réfléchissante permettent de configurer le déphasage voulu. Selon un autre mode de réalisation, il n'y a pas de rebouclage de la forme du résonateur équivalent ; autrement dit, la plage de déphasage de 360°peut commencer et se terminer par deux configu rations différentes.As illustrated in figure 4 , the 360 ° phase shift range begins and ends optionally with an identical equivalent resonator. The cell according to the invention can thus cover a range of 360 ° by a loopback of the equivalent resonator shape. Thus, a reflecting surface may consist of several periodic patterns, a pattern consisting of several adjacent phase shifters each configuring a near phase shift, to avoid a significant break in the shape of the equivalent resonator of two adjacent cells. This reduces the parasites formed in the beam reflected by the reflective surface. The electrical dimensions of the equivalent resonator depend on the length and / or the electrical width of the slots 202 and 203. Calculation and control means adapted to control the variable localized loads of the cells of the reflective surface allow to configure the desired phase shift. According to another embodiment, there is no loopback of the equivalent resonator shape; in other words, the 360 ° phase shift range can start and end with two different configurations.

Dans la première sous gamme, on excite une résonance de type fente, dont un schéma équivalent est présenté en figure 5a. Dans cette première sous-gamme, la cellule déphaseuse se comporte à l'égard de l'onde incidente, comme un circuit LC parallèle 501.In the first sub-range, a slot-like resonance is excited, of which an equivalent diagram is presented in figure 5a . In this first sub-range, the phase-shifting cell behaves with respect to the incident wave, as a parallel LC circuit 501.

Dans la seconde sous-gamme, une résonance de type microruban est excitée, le schéma équivalent est présenté en figure 5b. Dans cette deuxième sous-gamme, la cellule déphaseuse se comporte à l'égard de l'onde incidente, comme un circuit LC série 502. Le plan de masse séparé de la surface conductrice en face avant peut être représenté par une ligne de transmission 504.In the second sub-range, a microstrip resonance is excited, the equivalent diagram is presented in figure 5b . In this second sub-range, the phase-shifting cell behaves with respect to the incident wave, like a series LC 502 circuit. The ground plane separated from the conductive surface on the front face can be represented by a transmission line 504. .

En résumé, la cellule déphaseuse à double résonance peut être assimilée à deux circuits LC parallèles 503, 505 placés en série. En fonction des valeurs des paramètres inductifs et capacitifs, la cellule peut être placée dans un mode « fente » comme illustré en figures 5a et dans les configurations 402, 403, 404, 405 de la figure 4 ou dans un mode « patch », comme illustré en figure 5b, et dans les configurations 406, 407, 408, 409, 401.In summary, the double resonance phase shifter cell can be likened to two parallel LC circuits 503, 505 placed in series. Depending on the values of the inductive and capacitive parameters, the cell can be placed in a "slot" mode as illustrated in FIG. figures 5a and in the configurations 402, 403, 404, 405 of the figure 4 or in a "patch" mode, as illustrated in figure 5b and in the configurations 406, 407, 408, 409, 401.

La cellule déphaseuse selon l'invention apporte un avantage significatif par rapport à une cellule déphaseuse de l'art antérieur, basée sur une seule résonance (de type fente ou de type microruban). En effet, pour une cellule de l'art antérieur, il est nécessaire de réaliser une excursion de 360° en modifiant les seuls paramètres de longueur et largeur électriques du résonateur. Cette contrainte conduit à des comportements très résonants. En utilisant le fait que la cellule est basée sur des résonances fentes et microruban complémentaires fonctionnant sur des gammes réduites, on réduit significativement les contraintes de résonances, et il est ainsi possible d'élargir significativement la bande passante de la cellule déphaseuse.The phase-shifting cell according to the invention provides a significant advantage over a phase-shifting cell of the prior art, based on a single resonance (slit or microstrip type). In fact, for a cell of the prior art, it is necessary to make a 360 ° excursion by modifying the only parameters of the electric length and width of the resonator. This constraint leads to very resonant behaviors. By using the fact that the cell is based on complementary slot and microstrip resonances operating on reduced ranges, the resonance stresses are significantly reduced, and it is thus possible to significantly widen the bandwidth of the phase-shifter cell.

La figure 5c représente un schéma équivalent de la cellule déphaseuse selon l'invention. En fonction de la configuration des charges reconfigurables de la cellule, celle-ci peut adopter un comportement proche de la configuration « fente » illustrée en figure 5a, ou un comportement proche de la configuration « microruban » illustrée en figure 5b.The figure 5c represents an equivalent diagram of the phase-shifting cell according to the invention. Depending on the configuration of the reconfigurable charges of the cell, it can adopt a behavior close of the "slot" configuration illustrated in figure 5a , or a behavior close to the "microstrip" configuration illustrated in figure 5b .

La figure 6a et la figure 6b représentent des cellules déphaseuses selon l'invention à MEMS capacitifs. La figure 6a représente le cas où les fentes d'interconnexion 640 sont faiblement chargées et où les charges capacitives des fentes 650 sont variées. La cellule dans une telle configuration est équivalente à un résonateur de type fente dont on ferait varier la longueur et la largeur électrique. La figure 6b représente le cas où les fentes d'interconnexion 640 sont chargées du point de vue capacitif et où les charges capacitives des fentes sont variées. La cellule dans une telle configuration est équivalente à un résonateur « microruban » dont on ferait varier la longueur et la largeur électrique.The figure 6a and the figure 6b represent phase shifters according to the invention with capacitive MEMS. The figure 6a represents the case where the interconnection slots 640 are lightly charged and the capacitive loads of the slots 650 are varied. The cell in such a configuration is equivalent to a slot-type resonator whose length and electrical width would be varied. The figure 6b represents the case where the interconnection slots 640 are capacitively charged and the capacitive loads of the slots are varied. The cell in such a configuration is equivalent to a "microstrip" resonator whose length and electrical width would be varied.

Selon le mode de réalisation de la figure 7, la cellule déphaseuse rayonnante 700 est de forme rectangulaire avec quatre premières fentes 702 et 703 et quatre secondes fentes 704. Deux premières fentes 702 et 703, interconnectées par deux secondes fentes 704, sont positionnées dans une première moitié de la surface conductrice 708. Les deux autres premières fentes 702 et 703, interconnectées par les deux autres secondes fentes 704, sont positionnées dans la seconde moitié de la surface conductrice du patch. Les premières fentes 702 et 703 ont une largeur physique choisie avantageusement pour être du même ordre que celle des rubans métalliques intermédiaires 707. Néanmoins, selon d'autres modes de réalisation, les largeurs des fentes 702 et 703 et des rubans métalliques intermédiaires 707 peuvent être différentes.According to the embodiment of the figure 7 , the radiant phase-shifter cell 700 is of rectangular shape with four first slots 702 and 703 and four second slots 704. Two first slots 702 and 703, interconnected by two second slots 704, are positioned in a first half of the conductive surface 708. The two other first slots 702 and 703, interconnected by the other two second slots 704, are positioned in the second half of the conductive surface of the patch. The first slots 702 and 703 have a physical width advantageously chosen to be of the same order as that of the intermediate metal strips 707. Nevertheless, according to other embodiments, the widths of the slots 702 and 703 and the intermediate metal strips 707 can be different.

La cellule déphaseuse 700 de la figure 7 est particulièrement adaptée à la réflexion des ondes incidentes à polarisation linéaire. Une portion 705 de la couche conductrice sépare les premières fentes 702 et 703 de la moitié supérieure des premières fentes 702 et 703 de la moitié inférieure du patch.The phase-shifter cell 700 of the figure 7 is particularly suitable for the reflection of linear polarized incident waves. A portion 705 of the conductive layer separates the first slots 702 and 703 from the upper half of the first slots 702 and 703 of the lower half of the patch.

L'acheminement des signaux de commandes aux micro-commutateurs disposés sur une cellule déphaseuse constitue également un problème. Cet acheminement ne doit pas perturber le rayonnement du réseau réflecteur. Avantageusement, l'invention propose également une réponse à la résolution de ce problème.The routing of the control signals to the microswitches arranged on a phase-shifting cell is also a problem. This routing must not disturb the radiation of the reflector network. Advantageously, the invention also proposes an answer to the resolution of this problem.

Comme illustré en figure 8a, pour limiter les contraintes de routage, une architecture de commande distribuée est proposée. L'information de commande est transmise par exemple de façon digitale à un circuit intégré spécialisé (ASIC) 801, placé à proximité des charges variables commandées, en face arrière 810 du panneau antenne. Ce circuit transforme l'information reçue en signal de commande adapté pour chaque charge commandée. Une difficulté consiste donc à router ces signaux de commande de la face arrière vers chaque charge située sur la face avant 820 du réseau réflecteur, en ne perturbant pas le fonctionnement électromagnétique des cellules rayonnantes.As illustrated in figure 8a to limit routing constraints, a distributed control architecture is proposed. The control information is transmitted for example digitally to a specialized integrated circuit (ASIC) 801 placed near the variable loads controlled on the rear face 810 of the antenna panel. This circuit transforms the information received into a control signal adapted for each controlled load. A difficulty therefore consists in routing these control signals from the rear face to each load located on the front face 820 of the reflector network, by not disturbing the electromagnetic operation of the radiating cells.

Dans une première réalisation, illustrée en figure 8a, le panneau est constitué d'un substrat diélectrique multicouche sur lequel est reporté en face avant les puces radiofréquence (RF), comprenant le motif métallique de la cellule, et les MEMS. Ces puces RF sont alors dites monolithiques, et par exemple réalisées en quartz, silice fondue ou alumine. Le substrat diélectrique, par exemple en RO 4003 réalise la fonction d'espaceur entre les puces RF 803 et le plan de masse, et réalise les traversées des signaux de commandes vers les puces DC reportées en face arrière du substrat. L'acheminement des signaux de commandes en face avant est alors réalisé au sein des puces RF. Les procédés de micro-électroniques peuvent être utilisés pour réaliser les lignes résistives, au moins par section, à l'endroit où ces lignes croisent des fentes.In a first embodiment, illustrated in figure 8a , the panel consists of a multilayer dielectric substrate on which is shown on the front face of the radio frequency (RF) chips, comprising the metallic pattern of the cell, and the MEMS. These RF chips are then called monolithic, and for example made of quartz, fused silica or alumina. The dielectric substrate, for example in RO 4003, carries out the spacer function between the RF chips 803 and the ground plane, and carries out the traverses of the control signals towards the DC chips reported on the rear face of the substrate. The routing of the control signals on the front panel is then performed within the RF chips. The microelectronic methods can be used to make the resistive lines, at least in sections, where these lines intersect slots.

Dans une deuxième réalisation illustrée en figure 8b, le panneau est constitué d'un substrat diélectrique multicouche sur lequel est gravé le motif métallique 851 de la cellule, et sur lequel sont reportés des composants MEMS 853. Il s'agit alors d'un concept hybride.In a second embodiment illustrated in figure 8b the panel consists of a multilayer dielectric substrate on which is engraved the metal pattern 851 of the cell, and on which are reported MEMS 853 components. This is a hybrid concept.

Comme illustré en figure 9, il est possible de disposer des vias de commandes 901 à la périphérie de la cellule (dans le cadre 908), ou en son centre, sans altérer fondamentalement son fonctionnement. Aussi, l'agencement périodique de traversées métalliques en périphérie pourra avoir le même effet qu'un mur périphérique métallique connectant le cadre 908 et le plan de masse. Plusieurs de ces vias pourront alors être utilisés pour acheminer des signaux de commande depuis la face arrière vers la face avant. Il est également possible de connecter le patch central de la cellule 903 au plan de masse par une traversée métallique sans modifier significativement son comportement électrique. Un via de commande 902 peut donc également être implanté en cet endroit. Lorsque ce via est utilisé pour la commande, il doit être isolé du motif pour éviter tout risque de court-circuit électrique.As illustrated in figure 9 it is possible to arrange the vias 901 commands at the periphery of the cell (in the frame 908), or in its center, without fundamentally altering its operation. Also, the periodic arrangement of peripheral metal bushings may have the same effect as a metallic peripheral wall connecting the frame 908 and the ground plane. Several of these vias can then be used to route control signals from the back to the front. It is also possible to connect the central patch of cell 903 to the ground plane via a metal bushing without modifying significantly its electrical behavior. A control via 902 can therefore also be implemented here. When this via is used for the control, it must be isolated from the pattern to avoid any risk of electrical short circuit.

Une difficulté consiste alors à router en face avant ce signal de commande sans altérer le fonctionnement de la cellule déphaseuse. Si la technologie permet de réaliser des lignes très résistives (typiquement 10 kΩ/ ), les commandes peuvent être acheminées aux MEMS sans précautions particulières. Les pistes de commande peuvent par exemple traverser des fentes résonantes sans en altérer leur comportement. Il peut toutefois être également recommandé de n'utiliser ces lignes résistives qu'avec modération, pour que l'impédance totale de la ligne ne soit pas trop importante. C'est le cas par exemple si un dispositif de diagnostic est utilisé, permettant de vérifier si le micro-commutateur a été correctement activé. Dans ce cas, la ligne de commande pourra être résistive par section, ces sections correspondant aux traversées des fentes.A difficulty then consists in routing on the front face this control signal without altering the operation of the phase-shifting cell. If the technology makes it possible to produce very resistive lines (typically 10 kΩ /), the commands can be conveyed to the MEMS without particular precautions. The control tracks can for example pass through resonant slots without altering their behavior. However, it may also be advisable to use these resistive lines with moderation, so that the total impedance of the line is not too important. This is the case for example if a diagnostic device is used, to check if the micro-switch has been correctly activated. In this case, the command line may be resistive by section, these sections corresponding to the penetrations of the slots.

La figure 10 présente un autre mode de réalisation d'une cellule déphaseuse rayonnante selon l'invention. La cellule comprend une pluralité d'éléments conducteurs 1001, 1002 sous la forme, par exemple, de motifs imprimés sur un substrat diélectrique. La cellule comprend un élément conducteur central 1001 et quatre éléments conducteurs périphériques 1002 placés autour de ce premier élément conducteur 1001, les centres des quatre éléments conducteurs périphériques 1002 formant un carré au centre duquel est placé l'élément conducteur central 1001. Des éléments conducteurs d'interconnexion 1004 sont intercalés entre chacun des éléments conducteurs 1001, 1002.The figure 10 presents another embodiment of a radiant phase-shifting cell according to the invention. The cell comprises a plurality of conductive elements 1001, 1002 in the form of, for example, printed patterns on a dielectric substrate. The cell comprises a central conductive element 1001 and four peripheral conductive elements 1002 placed around this first conductive element 1001, the centers of the four peripheral conductive elements 1002 forming a square in the center of which the central conductive element 1001 is placed. interconnection 1004 are interposed between each of the conductive elements 1001, 1002.

Les éléments conducteurs 1001, 1002 sont reliés avec les éléments conducteurs d'interconnexion 1004 par des charges capacitives variables et commandées 1006.The conductive elements 1001, 1002 are connected with the interconnecting conductive elements 1004 by variable and controlled capacitive loads 1006.

Du fait de ses dimensions réduites, un élément conducteur 1001 ne permet pas, à lui seul, de créer un mode résonant. C'est l'interconnexion de ces éléments conducteurs qui peut permettre d'établir un tel mode.Due to its reduced dimensions, a conductive element 1001 does not, on its own, create a resonant mode. It is the interconnection of these conductive elements that can make it possible to establish such a mode.

Dans l'exemple, chaque élément conducteur a un motif en forme de croix à quatre branches orthogonales, de sorte que pour des éléments conducteurs alignés, les extrémités des branches des croix appartenant à deux croix adjacentes soient proches et facilement connectables par un élément conducteur d'interconnexion 1004.In the example, each conductive element has a cross-shaped pattern with four orthogonal branches, so that for aligned conductive elements, the ends of the branches of the crosses belonging to two adjacent crosses are close and easily connectable by an interconnecting conductive element 1004.

Des charges capacitives 1005 variables et commandées sont disposées en interface entre les éléments conducteur d'interconnexion 1004 et les extrémités des branches des croix formant les éléments conducteurs 1001, 1002.Variable and controlled capacitive loads 1005 are arranged in interface between the interconnecting conductor elements 1004 and the ends of the branches of the crosses forming the conductive elements 1001, 1002.

La figure 11 illustre une pluralité de configurations prises successivement par une même cellule déphaseuse telle que celle présentée en figure 10.The figure 11 illustrates a plurality of configurations taken successively by the same phase-shifting cell as that presented in FIG. figure 10 .

Dans une première configuration 1101, la cellule se comporte comme un patch métallique plein. Tous les éléments conducteurs sont liés par des charges capacitives. Cette première configuration 1101 peut, par exemple, être utilisée pour opérer un déphasage de l'onde incidente autour de 180°.In a first configuration 1101, the cell behaves like a solid metal patch. All conductive elements are connected by capacitive loads. This first configuration 1101 may, for example, be used to effect a phase shift of the incident wave around 180 °.

Dans une deuxième configuration 1102, les charges capacitives centrales 1110 - celles qui dans l'exemple sont placées en interface entre l'élément conducteur central et les éléments conducteur d'interconnexion - sont diminuées, de sorte que la cellule se comporte comme une ouverture dans le plan de masse, autrement dit, comme une fente annulaire 1150. La cellule a un comportement inductif. Cette deuxième configuration 1102 peut correspondre à un déphasage s'éloignant progressivement de 180° pour atteindre, par exemple, environ 80° lorsque les capacités centrales sont totalement déchargées.In a second configuration 1102, the central capacitive charges 1110 - those which in the example are placed in interface between the central conductive element and the interconnecting conductive elements - are reduced, so that the cell behaves like an opening in the plane of mass, in other words, like an annular cleft 1150. The cell has an inductive behavior. This second configuration 1102 may correspond to a phase shift progressively moving away from 180 ° to reach, for example, about 80 ° when the central capacitors are totally discharged.

Dans une troisième configuration 1103, les charges capacitives périphériques 1120 - c'est-à-dire celles qui dans l'exemple sont placées en interface entre les éléments conducteurs périphériques et les éléments conducteur d'interconnexion - sont diminuées, de sorte que le comportement inductif soit atténué au profit d'un comportement capacitif de la cellule rayonnante. Cette troisième configuration 1103 peut correspondre à une variation du déphasage comprise entre 80° (deuxième configuration 1102) et -20° lorsque les capacités périphériques s ont totalement déchargées.In a third configuration 1103, the peripheral capacitive loads 1120 - i.e. those which in the example are interfaced between the peripheral conductive elements and the interconnecting conductive elements - are decreased, so that the behavior inductive is attenuated in favor of a capacitive behavior of the radiating cell. This third configuration 1103 may correspond to a phase shift variation of between 80 ° (second configuration 1102) and -20 ° when the peripheral capacitors have totally discharged.

Dans une quatrième configuration 1104, les charges capacitives centrales 1110 sont augmentées, tandis que les charges capacitives périphériques sont demeures déchargées. La cellule a, dans cette quatrième configuration 1104, un comportement capacitif. Cette quatrième configuration 1104 peut correspondre à une variation du déphasage comprise entre -20°et -50 °.In a fourth configuration 1104, the central capacitive loads 1110 are increased, while the peripheral capacitive loads are still discharged. The cell has, in this fourth configuration 1104, a capacitive behavior. This fourth configuration 1104 may correspond to a phase shift variation of between -20 ° and -50 °.

Dans une cinquième configuration 1105, les charges capacitives centrales, sont augmentées jusqu'à retrouver l'état de la première configuration 1101, cette configuration pouvant correspondre, dans l'exemple, à un déphasage appliqué au signal incident entre -50°et -180°. La cellule retrouve son état initial correspondant à un patch métallique plein.In a fifth configuration 1105, the central capacitive loads are increased until the state of the first configuration 1101 is restored, this configuration being able to correspond, in the example, to a phase shift applied to the incident signal between -50 ° and -180. °. The cell returns to its initial state corresponding to a solid metal patch.

La figure 12 illustre des moyens d'acheminement des signaux de commande vers une cellule déphaseuse telle que celle de la figure 10.The figure 12 illustrates means for routing the control signals to a phase-shifting cell such as that of the figure 10 .

Des vias 1210 sont réalisés au niveau des centres des croix formant les éléments conducteurs. Le routage des commandes peut être effectué à un niveau inférieur à la surface de la cellule.Vias 1210 are made at the centers of the crosses forming the conductive elements. The routing of commands can be done at a level below the surface of the cell.

La cellule déphaseuse selon l'invention présente plusieurs avantages au regard des solutions de l'état de la technique.The phase-shifting cell according to the invention has several advantages with regard to the solutions of the state of the art.

Un premier avantage est que la cellule déphaseuse est apte à présenter deux résonances complémentaires, une première résonance par un résonateur équivalent de type fente et une seconde résonance par un résonateur équivalent de type patch. Cela permet d'éviter la présence de modes fortement résonants, et ainsi de limiter la sensibilité des cellules aux variations en fréquence. La valeur de phase évolue ainsi de manière beaucoup plus linéaire en fonction de la fréquence du signal source, évitant ainsi des sauts de phase brusques. La cellule déphaseuse selon l'invention est utilisable sur une plus large bande de fréquence (par exemple 30% de bande).A first advantage is that the phase-shifting cell is able to have two complementary resonances, a first resonance with a slot-like equivalent resonator and a second resonance with a patch-type equivalent resonator. This makes it possible to avoid the presence of highly resonant modes, and thus to limit the sensitivity of the cells to frequency variations. The phase value thus evolves much more linearly as a function of the frequency of the source signal, thus avoiding sudden phase jumps. The phase-shifter cell according to the invention is usable over a wider frequency band (for example 30% band).

Un deuxième avantage est la diminution des effets parasites d'un réseau réflecteur tel que décrit dans le demande de brevet FR 0450575 du fait qu'il n'y a pas de rupture forte entre deux cellules adjacentes constituant le réseau réflecteur. Cela est possible grâce à la possibilité de couvrir une plage de déphasage de 360° par un cycle de commande des charges localisées variables permettant de minimiser la variation fréquentielle de la phase.A second advantage is the reduction of parasitic effects of a reflector network as described in the patent application. FR 0450575 because there is no strong break between two adjacent cells constituting the reflector array. This is possible thanks to the possibility of covering a 360 ° phase shift range by a variable localized load control cycle making it possible to minimize the frequency variation of the phase.

Grâce à l'invention, il est possible de concevoir un réseau réflecteur pour une antenne dont la surface est couverte de cellules déphaseuses rayonnantes selon l'invention. Ces dernières sont commandées pour introduire un déphasage choisi sur une onde incidente, chacune des cellules adjacentes est commandée de sorte que le résonateur équivalent soit dans une configuration proche de celle d'une cellule adjacente. L'invention s'applique notamment aux antennes à réseau réflecteur embarquées sur engin mobile, comme par exemple à une antenne de satellite de télécommunication.Thanks to the invention, it is possible to design a reflector network for an antenna whose surface is covered with radiating phase-shifting cells according to the invention. These are controlled to introduce a selected phase shift on an incident wave, each of the adjacent cells is controlled so that the equivalent resonator is in a configuration close to that of an adjacent cell. The invention applies in particular to reflector array antennas on mobile equipment, such as for example a telecommunication satellite antenna.

La cellule peut être utilisée dans des panneaux satellitaires destinés à une utilisation en bande Ku ou en bande Ka à la fois en émission et en réception. A titre d'exemple, les cellules déphaseuses selon l'invention peuvent être employées autour de 20GHz pour l'émission et autour de 30GHz pour la réception.The cell can be used in satellite panels for use in Ku-band or Ka-band both in transmission and reception. By way of example, the phase-shifter cells according to the invention can be used around 20 GHz for the emission and around 30 GHz for the reception.

Claims (15)

  1. A radiating phase-shifting cell comprising a plurality of conducting elements (207, 209, 1001, 1002) formed on the surface of a substrate, above and spaced apart from a ground plane, said conducting elements being separated by slots (202, 203, 204), the arrangement of said slots (204) forming an equivalent resonator, the electrical form of which configures the phase-shifting applied to a wave to be reflected, said cell comprising controlled variable loads (206, 1005) that can vary the electrical length and/or width of said slots, said conducting elements (207, 209, 1001, 1002) and said controlled variable loads (206, 1005) being arranged so that, in at least one first configuration of said loads, an annular conducting surface of microwave signals is formed so as to create an inductive-dominant resonator and so that, in at least one second configuration, a slot is formed around at least one central conducting element (209, 1001) so as to create a capacitive-dominant resonator, characterised in that said conducting surface is formed by a plurality of conducting elements (207, 1002) surrounding said central conducting element (209, 1001) and separated from each other by said slots (204), which have a radial orientation relative to said central conducting element.
  2. The radiating phase-shifting cell according to claim 1, wherein said conducting elements (207, 1002) forming said conducting surface are located on the periphery, each of said peripheral conductors (207, 1002) being connected to said central conductor (209, 1001) and to the neighbouring peripheral conductors by means of controlled capacitive loads (206, 1005).
  3. The radiating phase-shifting cell according to claim 1 or 2, wherein said conducting elements (1001, 1002) are in the shape of a cross with four branches aligned along a plurality of rows, with the crosses belonging to two successive rows being offset relative to each other, said crosses being connected by means of controlled variable capacitive loads.
  4. The radiating phase-shifting cell (200) according to claim 1 or 2, wherein said conducting surface is formed by conducting strips (207) encompassed by annular slots (202, 203), said strips being connected by capacitive loads (206) that can modify the electrical length and/or width of said slots (204), which have a radial orientation, forming slots for interconnecting said annular slots (202, 203).
  5. The radiating phase-shifting cell according to any one of claims 2 to 4, wherein, when said cell is in said first configuration, the loads connecting together said peripheral conducting elements (207, 1002) are activated, with the loads connecting said central conducting element (209, 1001) to said peripheral conducting elements (207, 1002) being deactivated so as to form a resonating slot, the main contribution of which is equivalent to that of a parallel LC circuit.
  6. The radiating phase-shifting cell according to claim 5, wherein the loads connecting together said peripheral conducting elements (207, 1002) are adapted to assume multiple values between two extreme values so as to be able to progressively vary the dimensions of the equivalent resonating slot as a function of said values.
  7. The radiating phase-shifting cell according to any one of claims 2 to 6, wherein, when said cell is in said second configuration, the loads connecting together said peripheral conducting elements (207, 1002) are deactivated, with the loads connecting said central conducting element (209, 1001) to said peripheral conducting elements (207, 1002) being activated, so as to form a resonating microstrip, the main contribution of which is equivalent to that of a series LC circuit.
  8. The radiating phase-shifting cell according to claim 7, wherein the loads connecting said central conducting element (209, 1001) to said peripheral conducting elements (207, 1002) are adapted to assume multiple values between two extreme values in order to be able to progressively vary the dimensions of said equivalent resonating microstrip as a function of said values.
  9. The phase-shifting cell according to any one of the preceding claims, wherein the loads connecting said central conducting element (209, 1001) to said peripheral conducting elements (207, 1002) are adapted to vary independently of the value of the loads connecting together said peripheral conducting elements (207, 1002), so that the range of the phase-shift applied to the incident wave is broken down into two phase-shifting intervals, the phase-shifts applied in the first interval being obtained with a configuration of the resonating slot type, the phase-shifts applied in the second interval being obtained with a configuration of the resonating microstrip type.
  10. The radiating phase-shifting cell according to any one of the preceding claims, wherein said variable loads and the dimensions of said conducting elements (207, 209, 1001, 1002) are determined so that the cell configuration that allows the corresponding phase-shift to be applied to the first end of the phase-shifting range is identical to the cell configuration that allows the corresponding phase-shift to be applied to the second end of the range.
  11. The radiating phase-shifting cell according to any one of the preceding claims, wherein the phase-shifting range is 360°.
  12. The radiating phase-shifting cell according to any one of the preceding claims, wherein said conducting elements, said slots and said capacitive loads are disposed on said cell along a centre of symmetry that is placed at the centre of said cell.
  13. The radiating phase-shifting cell according to any one of the preceding claims, wherein said capacitive loads are diodes, MEMS or ferroelectric capacitors.
  14. A reflector array comprising a plurality of radiating phase-shifting cells according to any one of the preceding claims, said cells forming the reflective surface of said array.
  15. An antenna comprising a reflector array according to claim 14.
EP12183120.0A 2011-09-14 2012-09-05 Reconfigurable radiating phase-shifter cell based on resonances, slots and complementary microstrips Not-in-force EP2571098B1 (en)

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CN103367890B (en) * 2013-05-08 2015-04-08 西安电子科技大学 Dual-frequency microstrip directional-diagram reconfigurable antenna
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KR20130029362A (en) 2013-03-22
CA2788308C (en) 2018-11-20

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