EP2517272A4 - Einförmige filmschichtstruktur zur umwandlung der wellenlänge von emittiertem licht sowie verfahren zu ihrer bildung - Google Patents

Einförmige filmschichtstruktur zur umwandlung der wellenlänge von emittiertem licht sowie verfahren zu ihrer bildung

Info

Publication number
EP2517272A4
EP2517272A4 EP10840212.4A EP10840212A EP2517272A4 EP 2517272 A4 EP2517272 A4 EP 2517272A4 EP 10840212 A EP10840212 A EP 10840212A EP 2517272 A4 EP2517272 A4 EP 2517272A4
Authority
EP
European Patent Office
Prior art keywords
converts
wavelength
forming
same
emitted light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10840212.4A
Other languages
English (en)
French (fr)
Other versions
EP2517272A1 (de
Inventor
Peiching Ling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Achrolux Inc
Original Assignee
Achrolux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Achrolux Inc filed Critical Achrolux Inc
Publication of EP2517272A1 publication Critical patent/EP2517272A1/de
Publication of EP2517272A4 publication Critical patent/EP2517272A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Luminescent Compositions (AREA)
EP10840212.4A 2009-12-26 2010-12-27 Einförmige filmschichtstruktur zur umwandlung der wellenlänge von emittiertem licht sowie verfahren zu ihrer bildung Withdrawn EP2517272A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28479209P 2009-12-26 2009-12-26
PCT/US2010/062129 WO2011079325A1 (en) 2009-12-26 2010-12-27 Uniform film-layered structure that converts the wavelength of emitted light and method for forming the same

Publications (2)

Publication Number Publication Date
EP2517272A1 EP2517272A1 (de) 2012-10-31
EP2517272A4 true EP2517272A4 (de) 2015-04-08

Family

ID=44196166

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10840212.4A Withdrawn EP2517272A4 (de) 2009-12-26 2010-12-27 Einförmige filmschichtstruktur zur umwandlung der wellenlänge von emittiertem licht sowie verfahren zu ihrer bildung

Country Status (8)

Country Link
EP (1) EP2517272A4 (de)
JP (1) JP5639662B2 (de)
KR (2) KR20150036785A (de)
CN (1) CN102812570A (de)
DE (1) DE112010004424T5 (de)
GB (1) GB2488936B (de)
TW (1) TWI452733B (de)
WO (1) WO2011079325A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2583306A4 (de) * 2010-06-17 2014-09-17 Achrolux Inc Lichtemittierende struktur und verfahren zu ihrer herstellung
TWI459600B (zh) * 2012-07-06 2014-11-01 Lextar Electronics Corp 發光二極體封裝體及其製造方法
DE102012106949A1 (de) 2012-07-30 2014-01-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils
CN103030097B (zh) * 2012-12-12 2015-06-17 中北大学 基于静电场自聚焦的圆片级低维纳米结构的制备方法
TWI499094B (zh) * 2013-01-25 2015-09-01 Achrolux Inc Ｌｅｄ封裝件及其製法
CN108417698B (zh) * 2016-07-06 2020-09-11 苏州星烁纳米科技有限公司 量子点封装体及其制备方法、发光装置和显示装置
JP6923820B2 (ja) * 2018-10-31 2021-08-25 日亜化学工業株式会社 パッケージの製造方法および発光装置の製造方法
CN113024251A (zh) * 2019-12-09 2021-06-25 上海航空电器有限公司 具有平凹形结构薄膜的高显色性激光照明用荧光陶瓷及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197977A (ja) * 2001-12-27 2003-07-11 Okaya Electric Ind Co Ltd 発光ダイオードの製造方法
US20050239227A1 (en) * 2002-08-30 2005-10-27 Gelcore, Llc Light emitting diode component
US20080032142A1 (en) * 2006-08-03 2008-02-07 Toyoda Gosei Co., Ltd. Light emitting device, method of making the same, and light source device comprising the same
US20090065790A1 (en) * 2007-01-22 2009-03-12 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
WO2010132160A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
NL135549C (de) * 1966-04-22
US5019748A (en) * 1986-12-12 1991-05-28 E-Lite Technologies, Inc. Method for making an electroluminescent panel lamp as well as panel lamp produced thereby
CN1033902A (zh) * 1987-12-30 1989-07-12 依莱特技术公司 电致发光板型灯及其制造方法
JPH11233832A (ja) * 1998-02-17 1999-08-27 Nichia Chem Ind Ltd 発光ダイオードの形成方法
JPH11329235A (ja) * 1998-05-22 1999-11-30 Samsung Display Devices Co Ltd 表示素子用蛍光膜の製造方法
US6635987B1 (en) * 2000-09-26 2003-10-21 General Electric Company High power white LED lamp structure using unique phosphor application for LED lighting products
JP2002216622A (ja) * 2001-01-16 2002-08-02 Harison Toshiba Lighting Corp 蛍光ランプの製造方法
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
KR101105991B1 (ko) * 2003-07-09 2012-01-18 프라이즈 메탈즈, 인크. 침착 및 패턴 공정
JP4492378B2 (ja) * 2005-02-03 2010-06-30 豊田合成株式会社 発光装置およびその製造方法
US8563339B2 (en) * 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
US7344952B2 (en) * 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP4835333B2 (ja) * 2006-09-05 2011-12-14 日亜化学工業株式会社 発光装置の形成方法
JP2008187089A (ja) * 2007-01-31 2008-08-14 Yuri Kagi Kofun Yugenkoshi 発光ダイオードのランプフード
US7999283B2 (en) * 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
KR100973238B1 (ko) * 2008-03-26 2010-07-30 서울반도체 주식회사 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는ｌｅｄ
US20100119839A1 (en) * 2008-11-13 2010-05-13 Maven Optronics Corp. System and Method for Forming a Thin-Film Phosphor Layer for Phosphor-Converted Light Emitting Devices
EP2583306A4 (de) * 2010-06-17 2014-09-17 Achrolux Inc Lichtemittierende struktur und verfahren zu ihrer herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197977A (ja) * 2001-12-27 2003-07-11 Okaya Electric Ind Co Ltd 発光ダイオードの製造方法
US20050239227A1 (en) * 2002-08-30 2005-10-27 Gelcore, Llc Light emitting diode component
US20080032142A1 (en) * 2006-08-03 2008-02-07 Toyoda Gosei Co., Ltd. Light emitting device, method of making the same, and light source device comprising the same
US20090065790A1 (en) * 2007-01-22 2009-03-12 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
WO2010132160A1 (en) * 2009-05-15 2010-11-18 Peiching Ling Methods and apparatus for forming uniform particle layers of phosphor material on a surface

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011079325A1 *

Also Published As

Publication number Publication date
DE112010004424T5 (de) 2012-11-08
JP2013516074A (ja) 2013-05-09
WO2011079325A1 (en) 2011-06-30
CN102812570A (zh) 2012-12-05
KR20120083936A (ko) 2012-07-26
GB201210550D0 (en) 2012-07-25
KR20150036785A (ko) 2015-04-07
EP2517272A1 (de) 2012-10-31
TWI452733B (zh) 2014-09-11
GB2488936B (en) 2015-03-25
GB2488936A (en) 2012-09-12
JP5639662B2 (ja) 2014-12-10
TW201135982A (en) 2011-10-16

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