EP2500636A1 - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- EP2500636A1 EP2500636A1 EP11382320A EP11382320A EP2500636A1 EP 2500636 A1 EP2500636 A1 EP 2500636A1 EP 11382320 A EP11382320 A EP 11382320A EP 11382320 A EP11382320 A EP 11382320A EP 2500636 A1 EP2500636 A1 EP 2500636A1
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- EP
- European Patent Office
- Prior art keywords
- rectifier diode
- led module
- conductive wire
- light emitting
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
Definitions
- the disclosure relates to a light emitting device, and more particularly to a light emitting device having at least one light emitting diode (LED) module comprising a plurality of LEDs and disposed on a substrate.
- LED light emitting diode
- LEDs have been widely applied in illumination devices to serve as the light source for illumination.
- the LEDs Due to advantages of being durable and light, and having long service life and low power consumption, the LEDs have become the mainstream of the illumination industry and the semiconductor industry. Generally, the LEDs can be used in illumination devices, backlight modules of liquid crystal displays (LCDs), or light sources of indicating lamps. However, in practice, the current LED light sources can only operate in the condition that direct current (DC) power supply exists. This indicates the LED light source cannot be used in the alternating current (AC) power supplies. Such technical problems limit LED applications.
- DC direct current
- AC alternating current
- AC LEDs capable of using an AC power supply have been developed in the industry.
- the AC LEDs can directly use an AC power supply for driving.
- the AC power supply having positive cycles and a negative cycles LEDs are partially conducted, and the non-conducted LEDs have to endure a reverse bias voltage.
- the LEDs endure the reverse bias voltage alternately, and when the reverse bias voltage is excessively high, a leakage current of the high reverse biased voltage is generated, thereby resulting in breakdown of LED dies or influencing the illumination lifetime of the entire LEDs, and reducing the reliability.
- the LEDs driven through bridge rectifying cannot be lighted up simultaneously, that is to say, only 1/2 LED can be lighted up, such that the payload of the LEDs is significantly reduced, thereby influencing the illumination benefit.
- the disclosure is a light emitting device, which can solve the problems in the prior art.
- the disclosure provides a light emitting device, which comprises a substrate, a plurality of rectifier diodes, and at least one LED module.
- the substrate has a surface, and has a first cavity, a second cavity, and a third cavity disposed on the surface.
- the rectifier diodes are disposed in the first cavity and the third cavity.
- the LED module is disposed in the second cavity, and the LED module comprises a plurality of LEDs.
- the LEDs in the LED module may be selectively connected in series or in parallel.
- the rectifier diodes may be evenly arranged in the first cavity and the third cavity.
- one of the first cavity and the third cavity further comprises a plurality of sub-cavities, and each sub-cavity is for accommodating each rectifier diode.
- Each sub-cavity may be separated from one another by a protruding portion, and a conductive wire for connecting each rectifier diode penetrates the protruding portion.
- each sub-cavity may be separated from one another by two isolation parts, and a conductive wire for connecting each rectifier diode crosses over the isolation parts.
- the light emitting device may comprises a plurality of the LED modules, in which each LED module comprises the LEDs, and the LED modules are arranged in the second cavity in a matrix.
- the rectifier diodes comprise a first rectifier diode, a second rectifier diode, a third rectifier diode, and a fourth rectifier diode.
- the first rectifier diode is connected to the second rectifier diode in series.
- the third rectifier diode is connected to the fourth rectifier diode in series.
- a first AC node is defined between the first rectifier diode and the second rectifier diode, while a second AC node is defined between the third rectifier diode and the fourth rectifier diode.
- the first AC node and the second AC node receives an AC power supply.
- the AC power supply received at the first AC node and the second AC node is rectified as a direct current (DC) power supply by the rectifier diodes, to drive at least one LED module to emit light
- the LED modules comprise a first LED module, a second LED module, a third LED module, and a fourth LED module.
- the first LED module is electrically connected to the third LED module
- the second LED module is electrically connected to the fourth LED module, the second rectifier diode, and the fourth rectifier diode
- the third LED module is electrically connected to the first LED module, the first rectifier diode, and the third rectifier diode.
- At least one bottom conductive wire layer, at least one top conductive wire layer, and at least one middle conductive wire layer are further formed within the substrate.
- the middle conductive wire layer is formed between the bottom conductive wire layer and the top conductive wire layer.
- the top conductive wire layer comprises a first top conductive wire, a second top conductive wire, a third top conductive wire, and a fourth top conductive wire.
- the middle conductive wire layer comprises a first middle conductive wire and a second middle conductive wire.
- the second rectifier diode and the third rectifier diode are connected to an AC power supply through the bottom conductive wire layer respectively.
- the first LED module and the second LED module are electrically connected to the third LED module and the fourth LED module through the first top conductive wire and the fourth top conductive wire.
- the first rectifier diode and the third rectifier diode are electrically connected to the second rectifier diode and the fourth rectifier diode through the first middle conductive wire and the second middle conductive wire respectively, in which the second LED module and the third LED module are further electrically connected to the second rectifier diode and the fourth rectifier diode, and the first rectifier diode and the third rectifier diode through the second top conductive wire layer and the third top conductive wire layer respectively.
- the rectifier diodes and the LED modules may be configured in the same cavity on the substrate simultaneously, or directly configured on the substrate.
- a material of the substrate may be low-temperature cofired ceramics (LTCC).
- LTCC low-temperature cofired ceramics
- the LEDs may be installed on the substrate through wire bonding or flip chip bonding.
- the AC power supply outputs a DC power supply after being rectified by the rectifier diodes, so as to drive the LED modules to emit light.
- the LED module may selectively comprise a plurality of LEDs connected in series or in parallel, such that the withstand voltage of the light emitting device is improved, and compared with the conventional light emitting device, a better payload can be achieved.
- FIG. 1A is an equivalent circuit diagram of a light emitting device according to an embodiment of the disclosure
- FIG. 1B is a schematic structural view of the light emitting device in FIG. 1A , in which a light emitting device 10 is adapted to an AC power supply, and is driven by a rectified AC power supply (that is, a DC power supply) and emits light.
- a rectified AC power supply that is, a DC power supply
- FIG. 1B features of some element wires are omitted in FIG. 1B , and the detailed connection and features of the light emitting device 10 of the disclosure are described in detail with reference to FIGS. 2A to 2C .
- the light emitting device 10 comprises a substrate 102, in which a material of the substrate 102 may be LTCC, silicon, HTCC Al 2 O 3 , or other metal materials with reliable insulating materials.
- the substrate 102 has a plurality of cavities opened on a surface thereof, in which the cavities comprise a first cavity 201, a second cavity 202, and a third cavity 203.
- the first cavity 201, the second cavity 202, and the third cavity 203 are separated from one another, and the second cavity 202 is formed between the first cavity 201 and the third cavity 203.
- the first cavity 201 and the third cavity 203 are defined as a first configuration area
- the second cavity 202 is defined as a second configuration area, such that the first configuration area is used for accommodating rectifier diodes, and the second configuration area is used for accommodating LED modules.
- the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d are disposed in the first cavity 201 and the third cavity 203. According to the embodiments of the disclosure, the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d may be evenly disposed in the first cavity 201 and the third cavity 203.
- the second rectifier diode 104b and the fourth rectifier diode 104d may be located in the first cavity 201, and the first rectifier diode 104a and the third rectifier diode 104c may be located in the third cavity 203.
- the first cavity 201 further comprises a protruding portion 201 c protruding thereon.
- the protruding portion 201 c is used for dividing the first cavity 201 into two sub-cavities 201 a and 201 b, such that the sub-cavities 201 a and 201 b are used for accommodating the fourth rectifier diode 104d and the second rectifier diode 104b respectively.
- the first cavity 201, the second cavity 202, the third cavity 203, and the sub-cavities 201 a and 201 b may be formed through an etching process on the substrate 102, that is to say, the protruding portion 201 c is naturally formed through an etching step of the sub-cavities 201 a and 201 b, and the material is the same as that of the substrate 102, for example, an insulating material such as LTCC.
- the cavities may also be formed by configuring isolation parts (or referred to as isolation walls) on the substrate 102, to decrease the complexity of the process (described in detail in the following).
- a conductive wire 28 is electrically connected to the second rectifier diode 104b and the fourth rectifier diode 104d, and penetrates the protruding portion 201 c, so as to be connected to the conductive wires in FIGs. 2A to 2C .
- the protruding portion 201 c may be considered as a voltage-resistant portion, and is used for separating the second rectifier diode 104b and the fourth rectifier diode 104d, and thus the light emitting device 10 of the disclosure may have a high voltage withstand capability.
- the second cavity 202 has a first LED module 106a, a second LED module 106b, a third LED module 106c, and a fourth LED module 106d therein.
- the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d are formed by a plurality of LEDs.
- the LEDs may be installed on the substrate 102 through wire bonding or flip chip bonding.
- a package resin for example, epoxy resin
- the first cavity 201, the second cavity 202, and the third cavity 203 to complete the entire packaging structure of the rectifier diodes and the LEDs.
- the second cavity 202 may further form a plurality of sub-cavities, for accommodating the LED modules respectively.
- a structure of four cavities, five cavities, or more cavities may be formed.
- the light emitting device 10 of the disclosure comprises four LED modules (comprising the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d) in the second cavity 202, and the LED modules are arranged in the second cavity 202 in a matrix, as description of an embodiment.
- the number of the LED modules may be, but is not limited to, four, the designer can design the number according to the voltage withstand specification of the actual light emitting device, and the number of the LED modules is not used to limit the scope of the disclosure.
- FIG. 1C shows another embodiment of the light emitting device in FIG. 1A .
- the light emitting device 10 may comprise at least one isolation part 108 for separating the rectifier diodes and an electrical contact 110.
- the conductive wire 28 is separated by the isolation part 108, crosses over the top of the isolation part 108 and connects the electrical contact 110 to the second rectifier diode 104b and the fourth rectifier diode 104d.
- the first rectifier diode 104a and the third rectifier diode 104c are also separated by the isolation part 108 and electrically connected to the electrical contact 110.
- the material of the isolation part 108 may be, but is not limited to, silica (SiO 2 ) glass. Therefore, in the light emitting device 10 according to this embodiment, the protruding portion 201 c in FIG. 1B is replaced by the additionally configured isolation part 108, such that the light emitting device has the voltage withstand effect, and the complexity of the process is decreased.
- FIGs. 2A to 2C are schematic layout views of conductive wires of layers of the light emitting device of the disclosure in FIG. 1B .
- the conductive wires in FIG. 2A to 2C are located at blocks between the bottom of the substrate 102 and the cavities, that is to say, the conductive wires are embedded in the body of the substrate 102.
- the wires in FIG. 2A are located at a bottom layer of body of the substrate 102
- the wires in FIG. 2C are located at a top layer of the body of the substrate 102
- the wires in FIG. 2B are located at a middle layer of the body of the substrate 102, that is, between the bottom layer and the top layer.
- a first via 30a, a second via 30b, a third via 30c, and a fourth via 30d penetrate the bottom layer, the middle layer, and the top layer, such that the wires at the layers of the body of the substrate 102 electrically communicate with one another, in which the first via 30a is used for electrically connecting the second rectifier diode 104b and the fourth rectifier diode 104d, the second via 30b is used for electrically connecting the first LED module 106a and the fourth LED module 106d, the third via 30c and the fourth via 30d are used for electrically connecting the third rectifier diode 104c and the first rectifier diode 104a respectively.
- a first AC node 20 is disposed between the first rectifier diode 104a and the second rectifier diode 104b
- a second AC node 22 is disposed between the third rectifier diode 104c and the fourth rectifier diode 104d
- the first AC node 20 and the second AC node 22 are used for adapting an AC power supply (that is, an AC1 and an AC2 in FIGs. 3A and 3B ).
- the AC power supply may be, but is not limited to, 110 V or 220 V.
- the first rectifier diode 104a, the first LED module 106a, the second LED module 106b, the third LED module 106c, the fourth LED module 106d, and the fourth rectifier diode 104d form a first conductive path.
- the second rectifier diode 104b, the first LED module 106a, the second LED module 106b, the third LED module 106c, the fourth LED module 106d, and the third rectifier diode 104c form a second conductive path.
- a first middle conductive wire layer 24a located at the middle layer connects the first rectifier diode 104a and the second rectifier diode 104b through the fourth via 30d
- a second middle conductive wire layer 24b connects the third rectifier diode 104c and the fourth rectifier diode 104d through the third via 30c.
- a first top conductive wire layer 26a, a second top conductive wire layer 26b, a third top conductive wire layer 26c, and a fourth top conductive wire layer 26d located at the top layer are used for connecting the LED modules.
- the first top conductive wire layer 26a connects the first LED module 106a and the third LED module 106c
- the second top conductive wire layer 26b connects the second LED module 106b, the second rectifier diode 104b, and the fourth rectifier diode 104d
- the third top conductive wire layer 26c connects the third LED module 106c, the first rectifier diode 104a, and the third rectifier diode 104c
- the fourth top conductive wire layer 26d connects the second LED module 106b and the fourth LED module 106d.
- the first rectifier diode 104a is connected to the second rectifier diode 104b in series
- the third rectifier diode 104c is connected to the fourth rectifier diode 104d in series.
- FIGs. 3A and 3B are equivalent circuit diagram of the light emitting device in FIG. 1B , in which the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d are used for rectifying the AC power supply into the DC power supply, to drive the LED modules between the first rectifier diode 104a and the fourth rectifier diode 104d, and the LED modules between the second rectifier diode 104b and the third rectifier diode 104c to emit light.
- Each LED module (the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d) comprises a plurality of LEDs 301, and the LEDs 301 can be selectively connected to one another in series (as shown in FIG. 3A ) or in parallel (as shown in FIG. 3B ).
- the LEDs 301 in the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d are not limited to be electrically connected successively in series or in parallel. According to an embodiment of the disclosure, the LEDs 301 may also be partially connected in parallel and partially connected in series, so as to facilitate the advantage of flexibility of the light emitting device in fabrication.
- each LED module comprises 20 to 30 LEDs 301, and each LED 301 can be used to endure a reverse biased voltage being higher than 3 V, the withstand voltage of the light emitting device 10 of the disclosure can be effectively increased to be higher than 90 V.
- the light emitting device 10 has a higher payload, thereby reducing the fabrication cost of the circuit of the light emitting device invisibly.
- FIG. 4A is a schematic structural view of a light emitting device according to another embodiment of the disclosure.
- a light emitting device 10' comprises a substrate 102, a first rectifier diode 104a, a second rectifier diode 104b, a third rectifier diode 104c, a fourth rectifier diode 104d, a first LED module 106a, a second LED module 106b, a third LED module 106c, and a fourth LED module 106d.
- the rectifier diodes (the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d) and the LED modules (the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d), reference is made to FIGs. 5A to 5C together, which is the same as that described in FIGs. 2A to 2C in the foregoing embodiment, and will not be repeated herein.
- the rectifier diodes and the LED modules are configured in a cavity 204 on the substrate 102 together, and are separated by an isolation part 108.
- the light emitting device 10' rectifies the AC power supply into DC power supply through the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d, to drive the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d to emit light, to achieve the purpose of the disclosure
- the rectifier diodes and the LED modules are not limited to be disposed in the same cavity on the substrate 102.
- the cavity 204 may be divided into a first sub-cavity 204a and a second sub-cavity 204b, for accommodating the rectifier diodes and the LED modules respectively.
- the first sub-cavity 204a is defined as a first configuration area, for accommodating the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d.
- the second sub-cavity 204b is defined as a second configuration area, for accommodating the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d.
- the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d are used for rectifying the AC power supply into DC power supply, to drive the first LED module 106a, the second LED module 106b, the third LED module 106c, and the fourth LED module 106d to emit light.
- the light emitting devices 10' in FIGs. 4A and 4B have the isolation part 108 for separating the first rectifier diode 104a, the second rectifier diode 104b, the third rectifier diode 104c, and the fourth rectifier diode 104d at the electrical contact 110, and as for the connection mode, reference is made to FIG. 1C .
- the material of the isolation part 108 may be, for example, SiO 2 .
- the oxidation process performed on the substrate 102 is a technique well known to persons skilled in the art, the fabrication steps of the light emitting device 10' can be simplified, and the fabrication cost can also be further reduced.
- the cavities formed on the substrate 102 through an etching step can be replaced by the isolation part 108 formed through simple fabrication steps, and as for the schematic views, reference is made to FIGs. 6A and 6B .
- the rectifier diodes and the LED modules are only separated by a plurality of isolation parts 108, and thus the etching step for forming the cavities is omitted, and the purpose of the disclosure can be achieved.
- one or more filter circuits can be configured, to reduce ripples of the AC power supply, so as to smooth the output voltage.
- a capacitor capable of storing electric energy is selectively added to an output end of the rectifier diode in the filter circuit, in which the capacitor is generally referred to as a filter capacitor or a smoothing capacitor, to stabilize an output voltage after voltage stabilization and rectification.
- the AC power supply is rectified into the DC power supply through the rectifier diodes, to drive the LEDs to emit light.
- the rectifier diodes and the LEDs are disposed in the different cavities on the substrate respectively, to improve the voltage withstand degree of the entire light emitting device.
- the LEDs are not limited to be connected in series or in parallel, such that each LED module may comprise a plurality of LEDs, so the withstand voltage of the light emitting device is effectively improved accordingly.
- the designer can selectively omit the fabrication step of the cavities, and directly dispose the rectifier diodes and the LED modules on the substrate, which are separated by the isolation wall.
- Such a method can also achieve the purpose of the disclosure, however, in embodiments of this type, when the light emitting device enters a subsequent packaging stage, other specific fabrication steps are needed to complete the packaging of the package.
Abstract
Description
- The disclosure relates to a light emitting device, and more particularly to a light emitting device having at least one light emitting diode (LED) module comprising a plurality of LEDs and disposed on a substrate.
- Rapid progress of technologies results in rapid development for electronic products. LEDs have been widely applied in illumination devices to serve as the light source for illumination.
- Due to advantages of being durable and light, and having long service life and low power consumption, the LEDs have become the mainstream of the illumination industry and the semiconductor industry. Generally, the LEDs can be used in illumination devices, backlight modules of liquid crystal displays (LCDs), or light sources of indicating lamps. However, in practice, the current LED light sources can only operate in the condition that direct current (DC) power supply exists. This indicates the LED light source cannot be used in the alternating current (AC) power supplies. Such technical problems limit LED applications.
- Accordingly, AC LEDs capable of using an AC power supply have been developed in the industry. Through a design of the architecture of bridge-rectifying, the AC LEDs can directly use an AC power supply for driving. Generally, in the conditions that the AC power supply having positive cycles and a negative cycles, LEDs are partially conducted, and the non-conducted LEDs have to endure a reverse bias voltage. In this case, the LEDs endure the reverse bias voltage alternately, and when the reverse bias voltage is excessively high, a leakage current of the high reverse biased voltage is generated, thereby resulting in breakdown of LED dies or influencing the illumination lifetime of the entire LEDs, and reducing the reliability.
- Secondly, as mentioned above, the LEDs driven through bridge rectifying cannot be lighted up simultaneously, that is to say, only 1/2 LED can be lighted up, such that the payload of the LEDs is significantly reduced, thereby influencing the illumination benefit.
- Accordingly, persons in the art are in urgent need of finding solutions to solve the problem that the withstand voltage of the conventional AC LEDs is limited and provide a light emitting device that can endure the commercial power with high voltage input and has high payload.
- Accordingly, the disclosure is a light emitting device, which can solve the problems in the prior art.
- The disclosure provides a light emitting device, which comprises a substrate, a plurality of rectifier diodes, and at least one LED module. The substrate has a surface, and has a first cavity, a second cavity, and a third cavity disposed on the surface. The rectifier diodes are disposed in the first cavity and the third cavity. The LED module is disposed in the second cavity, and the LED module comprises a plurality of LEDs.
- According to an embodiment of the disclosure, the LEDs in the LED module may be selectively connected in series or in parallel.
- According to an embodiment of the disclosure, the rectifier diodes may be evenly arranged in the first cavity and the third cavity.
- According to an embodiment of the disclosure, one of the first cavity and the third cavity further comprises a plurality of sub-cavities, and each sub-cavity is for accommodating each rectifier diode. Each sub-cavity may be separated from one another by a protruding portion, and a conductive wire for connecting each rectifier diode penetrates the protruding portion.
- According to an embodiment of the disclosure, each sub-cavity may be separated from one another by two isolation parts, and a conductive wire for connecting each rectifier diode crosses over the isolation parts.
- According to an embodiment of the disclosure, the light emitting device may comprises a plurality of the LED modules, in which each LED module comprises the LEDs, and the LED modules are arranged in the second cavity in a matrix.
- According to an embodiment of the disclosure, the rectifier diodes comprise a first rectifier diode, a second rectifier diode, a third rectifier diode, and a fourth rectifier diode. The first rectifier diode is connected to the second rectifier diode in series. The third rectifier diode is connected to the fourth rectifier diode in series. A first AC node is defined between the first rectifier diode and the second rectifier diode, while a second AC node is defined between the third rectifier diode and the fourth rectifier diode. The first AC node and the second AC node receives an AC power supply. The AC power supply received at the first AC node and the second AC node is rectified as a direct current (DC) power supply by the rectifier diodes, to drive at least one LED module to emit light
- According to an embodiment of the disclosure, the LED modules comprise a first LED module, a second LED module, a third LED module, and a fourth LED module. The first LED module is electrically connected to the third LED module, the second LED module is electrically connected to the fourth LED module, the second rectifier diode, and the fourth rectifier diode, and the third LED module is electrically connected to the first LED module, the first rectifier diode, and the third rectifier diode.
- According to an embodiment of the disclosure, at least one bottom conductive wire layer, at least one top conductive wire layer, and at least one middle conductive wire layer are further formed within the substrate. The middle conductive wire layer is formed between the bottom conductive wire layer and the top conductive wire layer. The top conductive wire layer comprises a first top conductive wire, a second top conductive wire, a third top conductive wire, and a fourth top conductive wire. The middle conductive wire layer comprises a first middle conductive wire and a second middle conductive wire. The second rectifier diode and the third rectifier diode are connected to an AC power supply through the bottom conductive wire layer respectively. The first LED module and the second LED module are electrically connected to the third LED module and the fourth LED module through the first top conductive wire and the fourth top conductive wire. The first rectifier diode and the third rectifier diode are electrically connected to the second rectifier diode and the fourth rectifier diode through the first middle conductive wire and the second middle conductive wire respectively, in which the second LED module and the third LED module are further electrically connected to the second rectifier diode and the fourth rectifier diode, and the first rectifier diode and the third rectifier diode through the second top conductive wire layer and the third top conductive wire layer respectively.
- According to an embodiment of the disclosure, the rectifier diodes and the LED modules may be configured in the same cavity on the substrate simultaneously, or directly configured on the substrate.
- According to an embodiment of the disclosure, a material of the substrate may be low-temperature cofired ceramics (LTCC).
- According to an embodiment of the disclosure, the LEDs may be installed on the substrate through wire bonding or flip chip bonding.
- In view of the above, in the light emitting device of the disclosure, the AC power supply outputs a DC power supply after being rectified by the rectifier diodes, so as to drive the LED modules to emit light.
- Secondly, in the light emitting device of the disclosure, the LED module may selectively comprise a plurality of LEDs connected in series or in parallel, such that the withstand voltage of the light emitting device is improved, and compared with the conventional light emitting device, a better payload can be achieved.
- The disclosure will become more fully understood from the detailed description given herein below for illustration only, and thus are not limitative of the disclosure, and wherein:
-
FIG. 1A is an equivalent circuit diagram of a light emitting device according to an embodiment of the disclosure; -
FIG. 1B is a schematic structural view of the light emitting device inFIG. 1A ; -
FIG. 1C is a schematic structural view of the light emitting device inFIG. 1A ; -
FIG. 2A is a schematic layout view of bottom conductive wire layers of the light emitting device inFIG. 1B ; -
FIG. 2B is a schematic layout view of middle conductive wire layers of the light emitting device inFIG. 1B ; -
FIG. 2C is a schematic layout view of top conductive wire layers of the light emitting device inFIG. 1B ; -
FIG. 3A is an equivalent circuit diagram of the light emitting device inFIG. 1B having LEDs connected in series; -
FIG. 3B is an equivalent circuit diagram of the light emitting device inFIG. 1B having LEDs connected in parallel; -
FIG. 4A is a schematic structural view of a light emitting device according to another embodiment of the disclosure; -
FIG. 4B is a schematic structural view of a light emitting device according to another embodiment of the disclosure; -
FIG. 5A is a schematic layout view of bottom conductive wire layers of the light emitting device inFIG. 4A ; -
FIG. 5B is a schematic layout view of middle conductive wire layers of the light emitting device inFIG. 4A ; -
FIG. 5C is a schematic layout view of top conductive wire layers of the light emitting device inFIG. 4A ; -
FIG. 6A is a schematic structural view of a light emitting device according to another embodiment of the disclosure; and -
FIG. 6B is a schematic structural view of a light emitting device according to another embodiment of the disclosure. - The detailed features and advantages of the disclosure are described below in great detail through the following embodiments, and the content of the detailed description is sufficient for persons skilled in the art to understand the technical content of the disclosure and to implement the disclosure there accordingly. Based upon the content of the specification, the claims, and the drawings, persons skilled in the art can easily understand the relevant objectives and advantages of the disclosure.
-
FIG. 1A is an equivalent circuit diagram of a light emitting device according to an embodiment of the disclosure, andFIG. 1B is a schematic structural view of the light emitting device inFIG. 1A , in which alight emitting device 10 is adapted to an AC power supply, and is driven by a rectified AC power supply (that is, a DC power supply) and emits light. In order to simplify the drawings, features of some element wires are omitted inFIG. 1B , and the detailed connection and features of thelight emitting device 10 of the disclosure are described in detail with reference toFIGS. 2A to 2C . - The
light emitting device 10 comprises asubstrate 102, in which a material of thesubstrate 102 may be LTCC, silicon, HTCC Al2O3, or other metal materials with reliable insulating materials. Thesubstrate 102 has a plurality of cavities opened on a surface thereof, in which the cavities comprise afirst cavity 201, asecond cavity 202, and athird cavity 203. Thefirst cavity 201, thesecond cavity 202, and thethird cavity 203 are separated from one another, and thesecond cavity 202 is formed between thefirst cavity 201 and thethird cavity 203. In this embodiment, thefirst cavity 201 and thethird cavity 203 are defined as a first configuration area, and thesecond cavity 202 is defined as a second configuration area, such that the first configuration area is used for accommodating rectifier diodes, and the second configuration area is used for accommodating LED modules. - The
first rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d are disposed in thefirst cavity 201 and thethird cavity 203. According to the embodiments of the disclosure, thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d may be evenly disposed in thefirst cavity 201 and thethird cavity 203. That is to say, thesecond rectifier diode 104b and thefourth rectifier diode 104d may be located in thefirst cavity 201, and thefirst rectifier diode 104a and thethird rectifier diode 104c may be located in thethird cavity 203. - The
first cavity 201 further comprises a protrudingportion 201 c protruding thereon. The protrudingportion 201 c is used for dividing thefirst cavity 201 into twosub-cavities fourth rectifier diode 104d and thesecond rectifier diode 104b respectively. In this embodiment, thefirst cavity 201, thesecond cavity 202, thethird cavity 203, and thesub-cavities substrate 102, that is to say, the protrudingportion 201 c is naturally formed through an etching step of the sub-cavities 201 a and 201 b, and the material is the same as that of thesubstrate 102, for example, an insulating material such as LTCC. In other embodiments of the disclosure, the cavities may also be formed by configuring isolation parts (or referred to as isolation walls) on thesubstrate 102, to decrease the complexity of the process (described in detail in the following). Aconductive wire 28 is electrically connected to thesecond rectifier diode 104b and thefourth rectifier diode 104d, and penetrates the protrudingportion 201 c, so as to be connected to the conductive wires inFIGs. 2A to 2C . Herein, when thelight emitting device 10 is electrically connected to a high-voltage input power supply, the protrudingportion 201 c may be considered as a voltage-resistant portion, and is used for separating thesecond rectifier diode 104b and thefourth rectifier diode 104d, and thus thelight emitting device 10 of the disclosure may have a high voltage withstand capability. - The
second cavity 202 has afirst LED module 106a, asecond LED module 106b, athird LED module 106c, and afourth LED module 106d therein. Thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d are formed by a plurality of LEDs. The LEDs may be installed on thesubstrate 102 through wire bonding or flip chip bonding. Thus, in thelight emitting device 10 of the disclosure, in the subsequent packaging process, a package resin (for example, epoxy resin) is filled in thefirst cavity 201, thesecond cavity 202, and thethird cavity 203, to complete the entire packaging structure of the rectifier diodes and the LEDs. - In another embodiment of the disclosure, the
second cavity 202 may further form a plurality of sub-cavities, for accommodating the LED modules respectively. In this embodiment, a structure of four cavities, five cavities, or more cavities may be formed. - It should be noted that, the
light emitting device 10 of the disclosure comprises four LED modules (comprising thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d) in thesecond cavity 202, and the LED modules are arranged in thesecond cavity 202 in a matrix, as description of an embodiment. The number of the LED modules may be, but is not limited to, four, the designer can design the number according to the voltage withstand specification of the actual light emitting device, and the number of the LED modules is not used to limit the scope of the disclosure. - Secondly, in an embodiment, in order to simplify the fabrication process of the protruding
portion 201 c,FIG. 1C shows another embodiment of the light emitting device inFIG. 1A . As shown inFIG. 1C , in order to replace the protrudingportion 201 c, thelight emitting device 10 may comprise at least oneisolation part 108 for separating the rectifier diodes and anelectrical contact 110. In this structure, theconductive wire 28 is separated by theisolation part 108, crosses over the top of theisolation part 108 and connects theelectrical contact 110 to thesecond rectifier diode 104b and thefourth rectifier diode 104d. Similarly, thefirst rectifier diode 104a and thethird rectifier diode 104c are also separated by theisolation part 108 and electrically connected to theelectrical contact 110. The material of theisolation part 108 may be, but is not limited to, silica (SiO2) glass. Therefore, in thelight emitting device 10 according to this embodiment, the protrudingportion 201 c inFIG. 1B is replaced by the additionally configuredisolation part 108, such that the light emitting device has the voltage withstand effect, and the complexity of the process is decreased. -
FIGs. 2A to 2C are schematic layout views of conductive wires of layers of the light emitting device of the disclosure inFIG. 1B . The conductive wires inFIG. 2A to 2C are located at blocks between the bottom of thesubstrate 102 and the cavities, that is to say, the conductive wires are embedded in the body of thesubstrate 102. Particularly, the wires inFIG. 2A are located at a bottom layer of body of thesubstrate 102, the wires inFIG. 2C are located at a top layer of the body of thesubstrate 102, and the wires inFIG. 2B are located at a middle layer of the body of thesubstrate 102, that is, between the bottom layer and the top layer. A first via 30a, a second via 30b, a third via 30c, and a fourth via 30d penetrate the bottom layer, the middle layer, and the top layer, such that the wires at the layers of the body of thesubstrate 102 electrically communicate with one another, in which the first via 30a is used for electrically connecting thesecond rectifier diode 104b and thefourth rectifier diode 104d, the second via 30b is used for electrically connecting thefirst LED module 106a and thefourth LED module 106d, the third via 30c and the fourth via 30d are used for electrically connecting thethird rectifier diode 104c and thefirst rectifier diode 104a respectively. - Referring to
FIGs. 3A and3B together, afirst AC node 20 is disposed between thefirst rectifier diode 104a and thesecond rectifier diode 104b, asecond AC node 22 is disposed between thethird rectifier diode 104c and thefourth rectifier diode 104d, and thefirst AC node 20 and thesecond AC node 22 are used for adapting an AC power supply (that is, an AC1 and an AC2 inFIGs. 3A and3B ). The AC power supply may be, but is not limited to, 110 V or 220 V. When the AC power supply forms a positive half cycle, thefirst rectifier diode 104a, thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, thefourth LED module 106d, and thefourth rectifier diode 104d form a first conductive path. When the AC power supply forms a negative half cycle, thesecond rectifier diode 104b, thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, thefourth LED module 106d, and thethird rectifier diode 104c form a second conductive path. - Next, as shown in
FIGs. 2B and 2C , a first middleconductive wire layer 24a located at the middle layer connects thefirst rectifier diode 104a and thesecond rectifier diode 104b through the fourth via 30d, and a second middleconductive wire layer 24b connects thethird rectifier diode 104c and thefourth rectifier diode 104d through the third via 30c. - A first top
conductive wire layer 26a, a second topconductive wire layer 26b, a third topconductive wire layer 26c, and a fourth topconductive wire layer 26d located at the top layer are used for connecting the LED modules. Particularly, the first topconductive wire layer 26a connects thefirst LED module 106a and thethird LED module 106c, the second topconductive wire layer 26b connects thesecond LED module 106b, thesecond rectifier diode 104b, and thefourth rectifier diode 104d, the third topconductive wire layer 26c connects thethird LED module 106c, thefirst rectifier diode 104a, and thethird rectifier diode 104c, and the fourth topconductive wire layer 26d connects thesecond LED module 106b and thefourth LED module 106d. - According to the embodiments of the disclosure, the
first rectifier diode 104a is connected to thesecond rectifier diode 104b in series, and thethird rectifier diode 104c is connected to thefourth rectifier diode 104d in series. - Therefore,
FIGs. 3A and3B are equivalent circuit diagram of the light emitting device inFIG. 1B , in which thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d are used for rectifying the AC power supply into the DC power supply, to drive the LED modules between thefirst rectifier diode 104a and thefourth rectifier diode 104d, and the LED modules between thesecond rectifier diode 104b and thethird rectifier diode 104c to emit light. Each LED module (thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d) comprises a plurality ofLEDs 301, and theLEDs 301 can be selectively connected to one another in series (as shown inFIG. 3A ) or in parallel (as shown inFIG. 3B ). - The
LEDs 301 in thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d are not limited to be electrically connected successively in series or in parallel. According to an embodiment of the disclosure, theLEDs 301 may also be partially connected in parallel and partially connected in series, so as to facilitate the advantage of flexibility of the light emitting device in fabrication. Secondly, when each LED module comprises 20 to 30LEDs 301, and eachLED 301 can be used to endure a reverse biased voltage being higher than 3 V, the withstand voltage of thelight emitting device 10 of the disclosure can be effectively increased to be higher than 90 V. Thus, compared with conventional illuminating devices, thelight emitting device 10 has a higher payload, thereby reducing the fabrication cost of the circuit of the light emitting device invisibly. -
FIG. 4A is a schematic structural view of a light emitting device according to another embodiment of the disclosure. A light emitting device 10' comprises asubstrate 102, afirst rectifier diode 104a, asecond rectifier diode 104b, athird rectifier diode 104c, afourth rectifier diode 104d, afirst LED module 106a, asecond LED module 106b, athird LED module 106c, and afourth LED module 106d. As for the conductive wires and the electrical connection relationship between the rectifier diodes (thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d) and the LED modules (thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d), reference is made toFIGs. 5A to 5C together, which is the same as that described inFIGs. 2A to 2C in the foregoing embodiment, and will not be repeated herein. The only difference lies in that in the light emitting device 10' according another embodiment of the disclosure, the rectifier diodes and the LED modules are configured in acavity 204 on thesubstrate 102 together, and are separated by anisolation part 108. Thus, the light emitting device 10' rectifies the AC power supply into DC power supply through thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d, to drive thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d to emit light, to achieve the purpose of the disclosure - Secondly, the rectifier diodes and the LED modules are not limited to be disposed in the same cavity on the
substrate 102. According to an embodiment of the disclosure, as shown inFIG. 4B , thecavity 204 may be divided into afirst sub-cavity 204a and asecond sub-cavity 204b, for accommodating the rectifier diodes and the LED modules respectively. That is to say, in this embodiment, thefirst sub-cavity 204a is defined as a first configuration area, for accommodating thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d. Thesecond sub-cavity 204b is defined as a second configuration area, for accommodating thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d. Through the configuration, thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d are used for rectifying the AC power supply into DC power supply, to drive thefirst LED module 106a, thesecond LED module 106b, thethird LED module 106c, and thefourth LED module 106d to emit light. - The light emitting devices 10' in
FIGs. 4A and 4B have theisolation part 108 for separating thefirst rectifier diode 104a, thesecond rectifier diode 104b, thethird rectifier diode 104c, and thefourth rectifier diode 104d at theelectrical contact 110, and as for the connection mode, reference is made toFIG. 1C . In an embodiment, the material of theisolation part 108 may be, for example, SiO2. As the oxidation process performed on thesubstrate 102 is a technique well known to persons skilled in the art, the fabrication steps of the light emitting device 10' can be simplified, and the fabrication cost can also be further reduced. - Similarly, in the
light emitting device 10 inFIGs. 1B to 1C , the cavities formed on thesubstrate 102 through an etching step can be replaced by theisolation part 108 formed through simple fabrication steps, and as for the schematic views, reference is made toFIGs. 6A and 6B . In the embodiment inFIGS. 6A and 6B , the rectifier diodes and the LED modules are only separated by a plurality ofisolation parts 108, and thus the etching step for forming the cavities is omitted, and the purpose of the disclosure can be achieved. - Furthermore, generally, as the DC output after being rectified by the rectifier diodes is not a constant DC voltage. Therefore, in order to rectify the AC power supply to generate a stable DC, in a light emitting device according to another embodiment, one or more filter circuits can be configured, to reduce ripples of the AC power supply, so as to smooth the output voltage. In an embodiment, a capacitor capable of storing electric energy is selectively added to an output end of the rectifier diode in the filter circuit, in which the capacitor is generally referred to as a filter capacitor or a smoothing capacitor, to stabilize an output voltage after voltage stabilization and rectification.
- In view of the above, according to the light emitting device of the disclosure, the AC power supply is rectified into the DC power supply through the rectifier diodes, to drive the LEDs to emit light. In the light emitting device of the disclosure, the rectifier diodes and the LEDs are disposed in the different cavities on the substrate respectively, to improve the voltage withstand degree of the entire light emitting device.
- Secondly, in the light emitting device of the disclosure, the LEDs are not limited to be connected in series or in parallel, such that each LED module may comprise a plurality of LEDs, so the withstand voltage of the light emitting device is effectively improved accordingly.
- According to the light emitting device of the disclosure, in actual applications, the designer can selectively omit the fabrication step of the cavities, and directly dispose the rectifier diodes and the LED modules on the substrate, which are separated by the isolation wall. Such a method can also achieve the purpose of the disclosure, however, in embodiments of this type, when the light emitting device enters a subsequent packaging stage, other specific fabrication steps are needed to complete the packaging of the package.
Claims (11)
- A light emitting device, comprising:a substrate having a first cavity, a second cavity, and a third cavity formed thereon;a plurality of rectifier diodes arranged in the first cavity and the third cavity;
andat least one light emitting diode (LED) modulearranged in the second cavity, wherein the at least one LED module comprises a plurality of LEDs. - The light emitting device according to claim 1, wherein the LEDs in the LED module are selectively connected in series or in parallel.
- The light emitting device according to claim 1, wherein one of the first cavity and the third cavity further comprises a plurality of sub-cavities, each for accommodating each rectifier diode.
- The light emitting device according to claim 3, wherein protruding portions are formed to separate the sub-cavities.
- The light emitting device according to claim 3, wherein each sub-cavity is isolated from one another by two isolation parts.
- The light emitting device according to claim 5, wherein a material of each isolation part is silica (SiO2).
- The light emitting device according to claim 1, further comprising a package resin filled in the cavities to package the rectifier diodes and the LED module.
- The light emitting device according to claim 1, wherein a material of the substrate is low-temperature cofired ceramics (LTCC).
- The light emitting device according to claim 1, wherein the rectifier diodes comprise a first rectifier diode, a second rectifier diode, a third rectifier diode, and a fourth rectifier diode; the first rectifier diode is connected to the second rectifier diode in series, the third rectifier diode is connected to the fourth rectifier diode in series, a first alternating current (AC) node is defined between the first rectifier diode and the second rectifier diode, a second AC node is defined between the third rectifier diode and the fourth rectifier diode; wherein an AC power supply received at the first AC node and the second AC node is rectified as a direct current (DC) power supply by the rectifier diodes, to drive at least one LED module to emit light.
- The light emitting device according to claim 9, wherein the at least one LED module comprises a first LED module, a second LED module, a third LED module, and a fourth LED module, the first LED module is electrically connected to the third LED module, the second LED module is electrically connected to the fourth LED module, the second rectifier diode, and the fourth rectifier diode, and the third LED module is electrically connected to the first LED module, the first rectifier diode, and the third rectifier diode.
- The light emitting device according to claim 10, wherein at least one bottom conductive wire layer, at least one top conductive wire layer, and at least one middle conductive wire layer are fromed within in the substrate; the middle conductive wire layer is formed between the bottom conductive wire layer and the top conductive wire layer; the top conductive wire layer comprises a first top conductive wire, a second top conductive wire, a third top conductive wire, and a fourth top conductive wire; the middle conductive wire layer comprises a first middle conductive wire and a second middle conductive wire; the second rectifier diode and the third rectifier diode are connected to the AC power supply through the bottom conductive wire layer respectively; the first LED module and the second LED module are electrically connected to the third LED module and the fourth LED module through the first top conductive wire and the fourth top conductive wire respectively; the first rectifier diode and the third rectifier diode are electrically connected to the second rectifier diode and the fourth rectifier diode through the first middle conductive wire and the second middle conductive wire, and the second LED module and the third LED module are electrically connected to the second rectifier diode and the fourth rectifier diode, and the first rectifier diode and the third rectifier diode through the second top conductive wire and the third top conductive wire.
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EP11382320.7A Active EP2500636B1 (en) | 2011-03-14 | 2011-10-14 | Light emitting device |
EP15151630.9A Active EP2889533B1 (en) | 2011-03-14 | 2011-10-14 | Light emitting device |
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US (1) | US8716742B2 (en) |
EP (2) | EP2500636B1 (en) |
JP (1) | JP5357237B2 (en) |
KR (2) | KR20120104915A (en) |
CN (2) | CN104676324B (en) |
TW (1) | TWI445158B (en) |
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EP2876355A1 (en) * | 2013-11-22 | 2015-05-27 | Brightek Optoelectronic (Shenzhen) Co., Ltd. | LED base module and LED lighting device |
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- 2011-10-14 EP EP11382320.7A patent/EP2500636B1/en active Active
- 2011-10-14 EP EP15151630.9A patent/EP2889533B1/en active Active
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EP2876355A1 (en) * | 2013-11-22 | 2015-05-27 | Brightek Optoelectronic (Shenzhen) Co., Ltd. | LED base module and LED lighting device |
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Also Published As
Publication number | Publication date |
---|---|
CN104676324B (en) | 2017-12-05 |
EP2889533A1 (en) | 2015-07-01 |
KR101547924B1 (en) | 2015-08-27 |
TW201238029A (en) | 2012-09-16 |
TWI445158B (en) | 2014-07-11 |
JP5357237B2 (en) | 2013-12-04 |
CN102679195B (en) | 2015-03-18 |
US8716742B2 (en) | 2014-05-06 |
US20120235581A1 (en) | 2012-09-20 |
EP2500636B1 (en) | 2015-01-21 |
CN102679195A (en) | 2012-09-19 |
KR20120104915A (en) | 2012-09-24 |
JP2012195558A (en) | 2012-10-11 |
KR20140015616A (en) | 2014-02-06 |
CN104676324A (en) | 2015-06-03 |
EP2889533B1 (en) | 2020-07-01 |
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