EP2474044A4 - METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A VIA GROUP ENVIRONMENT - Google Patents

METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A VIA GROUP ENVIRONMENT

Info

Publication number
EP2474044A4
EP2474044A4 EP10814527.7A EP10814527A EP2474044A4 EP 2474044 A4 EP2474044 A4 EP 2474044A4 EP 10814527 A EP10814527 A EP 10814527A EP 2474044 A4 EP2474044 A4 EP 2474044A4
Authority
EP
European Patent Office
Prior art keywords
methods
devices
processing
precursor layer
group via
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10814527.7A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2474044A2 (en
Inventor
Brent Bollman
Nathaniel Stanley
Matthew Diego Rail
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP2474044A2 publication Critical patent/EP2474044A2/en
Publication of EP2474044A4 publication Critical patent/EP2474044A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
EP10814527.7A 2009-09-02 2010-09-02 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A VIA GROUP ENVIRONMENT Withdrawn EP2474044A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23941609P 2009-09-02 2009-09-02
US24101509P 2009-09-09 2009-09-09
PCT/US2010/047748 WO2011028957A2 (en) 2009-09-02 2010-09-02 Methods and devices for processing a precursor layer in a group via environment

Publications (2)

Publication Number Publication Date
EP2474044A2 EP2474044A2 (en) 2012-07-11
EP2474044A4 true EP2474044A4 (en) 2014-01-15

Family

ID=43649971

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10814527.7A Withdrawn EP2474044A4 (en) 2009-09-02 2010-09-02 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A VIA GROUP ENVIRONMENT

Country Status (3)

Country Link
EP (1) EP2474044A4 (ja)
JP (1) JP2013504215A (ja)
WO (1) WO2011028957A2 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2469580A1 (en) * 2010-12-27 2012-06-27 Nexcis Improved interface between a I-III-VI2 material layer and a molybdenum substrate
US9087954B2 (en) 2011-03-10 2015-07-21 Saint-Gobain Glass France Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell
JP5658112B2 (ja) * 2011-09-15 2015-01-21 本田技研工業株式会社 カルコパイライト型太陽電池の製造方法
WO2014002796A1 (ja) * 2012-06-25 2014-01-03 京セラ株式会社 光電変換装置および光電変換装置の製造方法
KR101768788B1 (ko) * 2012-12-20 2017-08-16 쌩-고벵 글래스 프랑스 화합물 반도체의 제조 방법 및 박막 태양 전지
TWI449193B (zh) * 2012-12-21 2014-08-11 Ind Tech Res Inst 太陽電池吸收層之製備方法及其熱處理設備
FR3005371B1 (fr) * 2013-05-03 2015-05-29 Nexcis Formation d'une couche semi-conductrice i-iii-vi2 par traitement thermique et chalcogenisation d'un precurseur metallique i-iii
NL2010809C2 (nl) * 2013-05-16 2014-11-24 Smit Ovens Bv Inrichting en werkwijze voor het aanbrengen van een materiaal op een substraat.
ES2869193T3 (es) * 2013-08-01 2021-10-25 Lg Chemical Ltd Método de fabricación de un precursor aglomerado para fabricar una capa de absorción de luz
CN107604340B (zh) * 2017-08-31 2023-09-01 安徽光智科技有限公司 化学气相沉积炉

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
KR20100052429A (ko) * 2007-09-11 2010-05-19 센트로테에름 포토볼타익스 아게 칼코겐을 제공하기 위한 방법 및 장치
US8771419B2 (en) * 2007-10-05 2014-07-08 Solopower Systems, Inc. Roll to roll evaporation tool for solar absorber precursor formation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers

Also Published As

Publication number Publication date
WO2011028957A2 (en) 2011-03-10
WO2011028957A3 (en) 2011-07-14
EP2474044A2 (en) 2012-07-11
JP2013504215A (ja) 2013-02-04

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