EP2460052A1 - Dispositif de controle de frequence optique, procede de fabrication d'un tel dispositif - Google Patents
Dispositif de controle de frequence optique, procede de fabrication d'un tel dispositifInfo
- Publication number
- EP2460052A1 EP2460052A1 EP10754357A EP10754357A EP2460052A1 EP 2460052 A1 EP2460052 A1 EP 2460052A1 EP 10754357 A EP10754357 A EP 10754357A EP 10754357 A EP10754357 A EP 10754357A EP 2460052 A1 EP2460052 A1 EP 2460052A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- optical
- cavity
- membrane
- layer
- walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01716—Optically controlled superlattice or quantum well devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
- G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/34—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector
- G02F2201/346—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector distributed (Bragg) reflector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/15—Function characteristic involving resonance effects, e.g. resonantly enhanced interaction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Definitions
- OPTICAL FREQUENCY CONTROL DEVICE METHOD FOR MANUFACTURING SUCH A DEVICE
- the present invention relates to the field of optical frequency control, in particular for the conversion of optical frequency and terahertz, as well as for their tunability.
- This control is achieved by trapping the photons in a small volume - whose dimensions are ordered in terms of wavelength - for a controlled time and by controlling the spatial distribution of the optical modes as well as their interaction with the outside world.
- the invention relates more particularly to an optical frequency control device around a central working frequency, comprising a vertical cavity formed of two parallel walls and partially reflecting, and a membrane having at least one structured layer under the shape of a photonic crystal.
- It also relates to a method of manufacturing such a device.
- the state of the art in this field comprises resonators made according to a so-called 2.5-dimensional approach, as disclosed in the patent document CN 1 897 375 A.
- This document describes a microlaser comprising a photonic crystal membrane with within a Fabry-Perot cavity.
- the positioning of the Bragg mirrors on either side of the photonic crystal membrane makes it possible to reduce the optical losses (by increasing the quality factor). and to improve the directivity of the laser.
- the device operates in monomode (a single optical frequency), without optical frequency tunability.
- the Fabry-Perot cavity interferes with light to select certain optical modes, said resonant modes, only able to remain in the cavity. From incident photons whose wavelength ⁇ corresponds to that of such a resonant mode, the photons radiated in the cavity are confined vertically by it to form these modes.
- the photonic crystal has, at the wavelength ⁇ , an optical mode which has a group velocity (photon propagation velocity) zero in the plane of the membrane, thus ensuring the lateral confinement of the photons (mode of Bloch slow) guided in the membrane.
- its diffractive properties allow it to couple to modes radiated in the normal direction to the plane of the membrane.
- the optical modes respectively associated with the cavity and the photonic crystal being spatially superimposed and spectrally resonant, can enter a strong coupling regime. It is thus given birth to two eigen modes, called “hybrids", of frequencies Fl and F2 around the frequency FO corresponding to the central wavelength of work ⁇ . These two eigen modes have both a guided character and a radiated character.
- the separation F2-F1 is directly proportional to the coupling strength between the optical modes associated with the cavity and the photonic crystal.
- the lifetime of the photons in these modes is essentially controlled by the reflectivity of the mirrors forming the Fabry-Perot cavity.
- An object of the present invention is to control the interactions between the two natural modes of optical resonance generated and to continuously monitor their natural frequencies Fl and F2.
- an optical frequency control device around a central working frequency, as described above, wherein the two walls are separated by an optical distance substantially proportional to half of the wavelength corresponding to the central working frequency, the membrane is integrated between the walls of the cavity and arranged to present an optical resonance mode at this central working wavelength, and at least one layer of the device consists of at least a portion of a material having non-linear optical properties.
- this material with non-linear optical properties makes it possible to create a very strong nonlinear interaction between the two own optical frequencies F1 and F2 of the existing cavity due to the association between the cavity and the photonic crystal, this interaction being all the more reinforced as each frequency is associated with a resonant clean mode. It is thus possible to parameterize the direct coupling between the resonant modes associated with the combination of the cavity and the photonic crystal, so as either to create photons to fill the modes Fl and F2, or to absorb photons at the same time. frequency F2 to emit at the frequency Fl (if F2 is greater than Fl), or to emit photons at the frequency F1-F2 or F1 + F2 from photons at the frequencies F1 and F2.
- the wavelength of the slow Bloch mode of the photonic crystal is controlled by the opto-geometric properties of the latter, namely the indices of the materials and their distribution in the plane of the membrane, as well as the thickness of the the membrane.
- the material having non-linear optical properties is disposed at a maximum of the vertical distribution of the electromagnetic intensity of at least one of the resonant modes generated by the device, which reinforces all the more the non-linear interaction between the two optical frequencies F1 and F2 corresponding to the two eigen modes generated by the cavity and the photonic crystal.
- the walls of the cavity are flat and have high reflection coefficients, which reinforces the optical interactions inside the cavity. Coefficients greater than or equal to 95% are preferred.
- these walls in terms of reflection coefficient, these consist of Bragg mirrors.
- the cavity has dimensions of the order of the wavelength of work, which can be micrometric if one works in infrared. Because of the small volume of the cavity, a strong spatial confinement of the optical modes is therefore achieved.
- the cavity has a higher quality factor than that of the photonic crystal of the membrane.
- the quality factor of the cavity makes it possible to conserve the photons for a long time in the structure, which also reinforces the interaction between matter and light, and thus nonlinear interactions.
- the quality factor of the photonic crystal manages the coupling between the cavity mode and the mode of the photonic crystal: the lower the quality factor, the stronger the coupling and the larger the difference F2-F1.
- the structuring of at least one layer of the photonic crystal of the membrane is in the form of a mesh on one dimension
- the structuring of at least one layer of the photonic crystal of the membrane is in the form of a mesh on two dimensions.
- the material having non-linear optical properties is formed by one of a quantum well and a distribution of semiconductor quantum boxes.
- the device comprises means for vertical displacement of the membrane.
- These means of vertical displacement make it possible to control the position of the membrane in the cavity, which influences the spatial overlap of the two coupled optical modes and thus makes it possible to modulate the coupling force and, consequently, the spectral separation F2- F1.
- the device comprises means for relative vertical displacement of one wall of the cavity relative to the other. These vertical displacement means make it possible to control the thickness of the cavity, which influences the central working wavelength ⁇ and, consequently, the values of the frequencies F1 and F2 of the two generated eigen modes.
- At least one of the above displacement means is electro-mechanical in nature.
- This type of displacement means indeed offers a significant accessible tunability rate, at least of the order of one tenth of the central working wavelength.
- the addressing of the light towards this device can be operated as well following a configuration of the "dark field” type (the angle of incidence of the incident beam is less than the angle total reflection critical) or in an “evanescent wave” configuration (the angle of incidence of the incident beam is greater than the critical angle of total reflection).
- the device can be used simultaneously, or even concomitantly, for "free space optics” and “guided optics” type applications.
- the invention also relates to an optical frequency conversion system, comprising an optical frequency control device according to one of the embodiments above, as well as optical pumping means of only one of the two modes. generated.
- the medium between the two walls of the cavity is an active medium in a saturable absorber regime. Therefore, in the case where the optical pumping means perform pumping for example only the mode at the frequency F2, the device allows the transfer of a signal carried by an incident optical carrier of frequency Fl (frequency of one of the two modes) to another frequency carrier F2 (frequency of the other mode).
- the medium and the optical pumping means are determined so that only one clean mode does not saturate the absorbent while the superposition of the two eigen modes saturates it.
- the medium between the two walls of the cavity is a medium having an optical gain. Therefore, in the case where only the frequency F2 is pumped, when the laser threshold is reached, the device converts the power received at the frequency F2 into a coherent signal at the frequency F1.
- the presence of optical resonance not only for the laser mode but also for the pump signal, reduces the laser threshold, and therefore the power consumed, significantly.
- the invention also relates to an optical frequency addition and subtraction system, comprising an optical frequency control device according to one of the embodiments described above, as well as optical pumping means of the two. generated eigen modes, the material of at least one layer of the device having non-linear properties of order 2.
- the device being pumped at the frequencies F1 and F2, and given the non-linear effect of order 2 , signals of frequencies F1 + F2 and F2-F1 can be generated.
- the strong confinement in one place of the two optical modes makes it possible to reinforce the conversion efficiency.
- the invention finally relates to a method of manufacturing an optical frequency control device around a central working frequency (FO), comprising successively:
- the device obtained by this manufacturing method has the advantage of being compact, of very strongly and non-linearly coupling the two generated eigenfrequencies, as well as of allowing a parameterization of this coupling, ensuring a control continuous of the two frequencies.
- the addition of a part of the heterostructure consists of a first step of depositing an assembly formed by said part of the heterostructure and a substrate and a second step of removing the heterostructure. substrate of the whole.
- the method comprises a posterior step of constitution of displacement means one of the CP membrane and at least one partially reflecting layer.
- FIG. 1 a diagram showing a sectional view of the optical frequency control device according to a first embodiment of the invention
- FIG. 2 diagrams representing a structured layer of the membrane
- FIG. 3 a diagram showing a sectional view of the optical frequency control device according to a second embodiment of the invention comprising optical pumping means
- FIG. 4 a diagram showing a sectional view of the optical frequency control device according to a third embodiment of the invention comprising means for moving certain elements, and
- FIG. 5 a diagram showing the successive steps of the method of manufacturing an optical frequency control device according to a particular embodiment of the invention.
- a resonant optical mode corresponds to a state in which the photons are located at a given wavelength in a given structure.
- These modes can be filled with photons, either by injecting light or using a transmitter material within the structure.
- an optical frequency control device 1 comprises two coupled resonant elements: a vertical cavity 2 and a photonic crystal membrane 6. This device combines these two elements 2 and 6, which are capable of acting individually as optical resonators. It works around a central working frequency FO, to which corresponds a working wavelength ⁇ , by generating two own optical frequencies whose values are located symmetrically on either side of the central optical frequency FO .
- the vertical cavity 2 is a Fabry-Perot type cavity. It has two Bragg mirrors 3a and 3b. These mirrors are parallel and constitute partially reflective walls whose reflection coefficients are greater than 95%. They consist of a succession of high index layers (silicon - Si) and low index layers (silicon dioxide - SiO 2). Between these two walls, the cavity 2 comprises a medium 4, consisting for example of silicon dioxide (SiO 2).
- the optical thickness of this cavity is equal to half of the central wavelength of work ⁇ multiplied by a natural number. Illuminated by an incident light 10, from which reflected light 11 and transmitted light 12 are generated, the cavity 2 is then able to radiate photons, previously confined within it, according to different modes of optical resonance.
- the quality factor of this cavity 2 is high, of the order of 10,000.
- the membrane 6 comprises a set of layers 7a, 7b and 8 constituting a photonic crystal, consisting for example of silicon (Si) in the case of a device "Passive” or heterostructure based on III-V semiconductor (GaAs or InP for example) integrating quantum wells (InGaAs for example) or quantum dot planes (InAs for example).
- the photonic crystal is structured so as to have an optical resonance at the same wavelength ⁇ as that for which the cavity 2 resonates.
- the mode of optical resonance resulting from the crystal is a slow mode, called "de Bloch", of the crystal.
- the layers forming the photonic crystal of the membrane are structured in their thicknesses.
- the layer 7a is structured according to a periodic two-dimensional mesh, comprising a set of structuring elements 9.
- all the layers of the membrane 6, namely the layers 7a, 7b and 8, are structured identically to each other and identically to the mesh of Figure 2.
- the structuring of the membrane 6 is parameterized by the shape the size and the relative position of the various structuring elements 9 constituting it.
- the quality factor of the photonic crystal is also adjusted by its geometry.
- the photonic crystal of the membrane 6 ensures a lateral confinement of the photons guided in the membrane.
- This membrane 6 is integrated inside the cavity 2, that is to say between the two mirrors 3a and 3b, parallel to them.
- the photonic crystal then allows, in addition to the lateral confinement, a diffractive coupling with the radiated photons and confined vertically by the cavity 2.
- this membrane 6 is arranged with respect to the cavity 2 so as to reach the maximum of the field of the optical mode of this cavity.
- the cavity 2 and the membrane 6 present optical resonance modes that are spatially superimposed and spectrally resonant.
- the regime of strong coupling between their optical modes contributes to the birth of two eigen modes, called “hybrids", of optical frequencies Fl and F2, whose values are located symmetrically and on both sides of the value of the central working frequency FO. These modes have both a guided character and a radiated character.
- any one may consist of a material having non-linear optical properties, which does not exclude that several input they are.
- the layer comprising this material with nonlinear optical properties is integrated in the membrane 6. It is understood that the skilled person may have this layer otherwise within the membrane. In particular, it may form all the layers of the material membrane with non-linear optical properties or form only a portion of a single layer. According to different variants, this material with nonlinear optical properties is in the form of a well or a distribution of quantum dots of a semiconductor.
- each system comprises a device 1 according to the invention and means 15 for optical pumping.
- the medium 4 between the two walls 3a and 3b of the cavity 2 is an active medium in a saturable absorber regime, located more precisely in the membrane 6.
- the two-mode structure forming the crystal photonic then allows the transfer of the signal carried by an incident optical carrier of frequency F1 (frequency of one of the two eigen modes generated by the device 1) to another frequency carrier F2 (frequency of the other eigenmode).
- the optical pumping means 15 are arranged so as to perform the pumping only eigen mode corresponds to the optical frequency F2.
- An optical information carried at frequency F1 reaches the device (signal "information").
- the active medium is able to absorb at the two frequencies Fl and F2.
- the power carried by the pump does not ensure the saturation of the absorption, while the combined powers of the information and the pump saturate the absorption. This transfers information from the carrier F1 to the carrier F2.
- the medium 4 between the two walls 3a and 3b of the cavity 2 is a laser effect medium.
- the device 1 receives optical information transported respectively to the frequencies F1 and F2, whose modulation frequencies are identical.
- the active medium is able to absorb at the two frequencies Fl and F2.
- the optical pumping means 15 are arranged in such a way that only the power at the frequency F2 makes it possible to ensure the saturation of the absorption.
- the structure converts the power received at the frequency F2 into a coherent signal at the frequency F1.
- the non-linear optical properties of the material constituting the photonic crystal layer of the membrane 6 are of order 2.
- the device 1 receives optical information transported respectively at the frequencies F 1 and F 2, of which the modulation frequencies are identical.
- the active medium is able to absorb at the two frequencies Fl and F2.
- the optical pumping means 15 are arranged such that the power at the frequency F1 or the power at the frequency F2 indifferently allows to ensure the saturation of the absorption. Therefore, signals of frequencies F1 + F2 and F2-F1 can be generated.
- the strong confinement in one place of the two eigen modes of optical resonance at the frequencies Fl and F2 makes it possible to reinforce the efficiency of the conversion of the optical frequencies.
- FIG. 4 Examples of implementation of the invention for 1 wavelength tunability are illustrated in FIG. 4.
- the device comprises for this purpose means 16 for vertical displacement of the membrane 6 and means 17 for relative vertical displacement of the wall 3a of the cavity 2 relative to the wall 3b.
- These means 16 and 17 may be electromechanical.
- the means 16 make it possible to control the relative position of the membrane with respect to the walls 3a and 3b of the cavity. This displacement makes it possible to modify the spatial overlap of the two coupled modes of optical resonance, of frequencies F1 and F2, and thus of modulating their coupling force. This results in a change in the spectral difference between these two optical frequencies.
- the means 17 make it possible to control the optical thickness of the cavity 2.
- the control of this thickness makes it possible to modify the value of the frequency FO workstation from which are generated the optical modes at frequencies Fl and F2. This results in a common offset of the values of these two optical frequencies.
- the wavelength tunability of the device is thus achieved as a function of the position of the membrane 6 in the cavity 2 as well as the optical thickness of this cavity. We can therefore agree both the values of these two eigenfrequencies and their spectral difference.
- the first Bragg mirror 3a is deposited, consisting of a succession of silicon and silicon dioxide layers, and then of the first part 4a. medium 4, silicon dioxide, of the cavity (step II).
- the layer is made of a material having non-linear optical properties (well or plan quantum boxes of a semiconductor).
- the membrane 6 is previously made on a substrate 22 after having deposited a stop layer 21.
- the assembly is then reported by a bonding technique on medium 4a (step III).
- This substrate 22 consists for example of indium phosphide (InP) and the stop layer 21 of indium gallium arsenide (InGaAs). After transfer, the substrate 22 and the stop layer 21 are removed (step IV) selectively to leave only the membrane 6 against the medium 4a.
- InP indium phosphide
- InGaAs indium gallium arsenide
- the membrane is then structured in the form of a photonic crystal (step VI). Structuring is operated in such a way that the photonic crystal membrane 6 has an optical resonance mode at the working central wavelength ⁇ .
- step II namely the deposit of an assembly formed by the second part 4b of the medium 4, the second Bragg mirror 3b.
- This addition is made so that the mirrors 3a and 3b are separated by a distance proportional to half the central working wavelength ⁇ .
- the entire membrane 6 is etched at the same time, that is to say that holes are made at the same time in the layers 7a, 7b and 8.
- the electromechanical tunability can be obtained by means of selective etchings of all or part of the layer 4 and thus making the reflector 3 or the membrane "mobile” 6.
- a posterior step of constitution of displacement means can be provided, one of the heterostructure forming the membrane 6 and at least one Bragg mirror.
- the displacement means 16 and 17 ( Figures 3 and 4) are then appropriately added to the device from the manufacturing method of the invention.
- An optical frequency control device can be used in many applications, particularly for wavelength conversion in the telecommunications field.
- Other applications are possible, such as spectroscopy chemical in the terahertz domain, which corresponds to phonon energies or the rotation of molecules.
- spectroscopy in which two consecutive laser signals of near frequencies are sent on a sample.
- the first laser constitutes the pump (and modifying the properties of the medium) and the second laser the probe (probing the properties of the medium).
- the two laser signals come from the same device that is the subject of the invention.
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0903758A FR2948777B1 (fr) | 2009-07-30 | 2009-07-30 | Dispositif de controle de frequence optique, procede de fabrication d'un tel dispositif |
| PCT/FR2010/051578 WO2011020961A1 (fr) | 2009-07-30 | 2010-07-26 | Dispositif de controle de frequence optique, procede de fabrication d'un tel dispositif |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2460052A1 true EP2460052A1 (fr) | 2012-06-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP10754357A Withdrawn EP2460052A1 (fr) | 2009-07-30 | 2010-07-26 | Dispositif de controle de frequence optique, procede de fabrication d'un tel dispositif |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8885247B2 (fr) |
| EP (1) | EP2460052A1 (fr) |
| FR (1) | FR2948777B1 (fr) |
| WO (1) | WO2011020961A1 (fr) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20150033079A (ko) * | 2013-09-23 | 2015-04-01 | 한국전자통신연구원 | 메타물질 구조물 |
| JP6440138B2 (ja) | 2014-02-28 | 2018-12-19 | 国立大学法人京都大学 | レーザ装置 |
| US9524881B2 (en) * | 2015-04-30 | 2016-12-20 | Texas Instruments Incorporated | Method for fabricating specific termination angles in titanium tungsten layers |
| NO348540B1 (en) * | 2015-10-05 | 2025-03-03 | Sintef Tto As | Infrared source |
| US10191454B2 (en) * | 2016-06-13 | 2019-01-29 | William Marsh Rice University | Methods and related systems of ultra-short pulse detection |
| CN110568525B (zh) * | 2019-08-08 | 2020-08-25 | 武汉大学 | 基于微纳起偏器及f-p腔结构的彩色纳米印刷器件 |
| WO2022249360A1 (fr) * | 2021-05-26 | 2022-12-01 | ソニーグループ株式会社 | Élément laser et dispositif électronique |
| US20240235157A1 (en) * | 2021-05-26 | 2024-07-11 | Sony Group Corporation | Laser element and electronic device |
| JP2023054990A (ja) * | 2021-10-05 | 2023-04-17 | 国立大学法人京都大学 | 面発光レーザ素子 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10284806A (ja) * | 1997-04-10 | 1998-10-23 | Canon Inc | フォトニックバンド構造を有する垂直共振器レーザ |
| US6711200B1 (en) * | 1999-09-07 | 2004-03-23 | California Institute Of Technology | Tuneable photonic crystal lasers and a method of fabricating the same |
| GB2366666B (en) * | 2000-09-11 | 2002-12-04 | Toshiba Res Europ Ltd | An optical device and method for its manufacture |
| US6466709B1 (en) * | 2001-05-02 | 2002-10-15 | California Institute Of Technology | Photonic crystal microcavities for strong coupling between an atom and the cavity field and method of fabricating the same |
| JP2005535141A (ja) * | 2002-07-30 | 2005-11-17 | 独立行政法人科学技術振興機構 | 高屈折率材料内で電界が最大の半波長マイクロポスト・マイクロキャビティ |
| JP4027392B2 (ja) * | 2005-04-28 | 2007-12-26 | キヤノン株式会社 | 垂直共振器型面発光レーザ装置 |
| CN100349340C (zh) | 2005-07-15 | 2007-11-14 | 中国科学院半导体研究所 | 2.5维光子晶体面发射激光器 |
| US7778296B1 (en) * | 2006-05-12 | 2010-08-17 | The Board Of Trustees Of The Leland Stanford Junior University | Optical microcavity emitter arrangements and methods therefor |
-
2009
- 2009-07-30 FR FR0903758A patent/FR2948777B1/fr not_active Expired - Fee Related
-
2010
- 2010-07-26 US US13/387,607 patent/US8885247B2/en not_active Expired - Fee Related
- 2010-07-26 WO PCT/FR2010/051578 patent/WO2011020961A1/fr not_active Ceased
- 2010-07-26 EP EP10754357A patent/EP2460052A1/fr not_active Withdrawn
Non-Patent Citations (2)
| Title |
|---|
| None * |
| See also references of WO2011020961A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011020961A1 (fr) | 2011-02-24 |
| US20120170109A1 (en) | 2012-07-05 |
| FR2948777B1 (fr) | 2011-12-02 |
| FR2948777A1 (fr) | 2011-02-04 |
| US8885247B2 (en) | 2014-11-11 |
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