EP2454765A1 - Leuchtdiode und verfahren zur herstellung einer leuchtdiode - Google Patents

Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Info

Publication number
EP2454765A1
EP2454765A1 EP10725804A EP10725804A EP2454765A1 EP 2454765 A1 EP2454765 A1 EP 2454765A1 EP 10725804 A EP10725804 A EP 10725804A EP 10725804 A EP10725804 A EP 10725804A EP 2454765 A1 EP2454765 A1 EP 2454765A1
Authority
EP
European Patent Office
Prior art keywords
light
emitting diode
carrier
reflective element
diode according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10725804A
Other languages
German (de)
English (en)
French (fr)
Inventor
Gertrud KRÄUTER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2454765A1 publication Critical patent/EP2454765A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • Lumineszenzkonversionsmaterial is emitted.
  • the radiation of the luminescence conversion material is preferably excited by the electromagnetic radiation of the at least one light-emitting diode chip of the light-emitting diode.
  • the reflective element is for example for diffuse reflection of
  • this non-visible radiation is reflected by the reflective element comprising porous polytetrafluoroethylene, preferably non-directional.
  • Reflection of electromagnetic radiation is provided, wherein the reflective element is attached to the carrier and the reflective element comprises porous polytetrafluoroethylene.
  • Light-emitting diode as described here, can be produced. That is, all the features described for the light emitting diode are also disclosed for the method and vice versa.
  • a carrier which at least in places comprises a thermoplastic. That is, at least locations of the outer surface of the carrier are with a
  • the light-emitting diode according to the exemplary embodiment of FIG. 2 comprises three light-emitting diode chips 2 a, 2 b, 2 c, which may be suitable, for example, for generating blue, red and green light.
  • the bottom plate 10 is formed as a printed circuit board.
  • the bottom plate 10 is formed of a ceramic material to which

Landscapes

  • Led Device Packages (AREA)
EP10725804A 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode Withdrawn EP2454765A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009033287A DE102009033287A1 (de) 2009-07-15 2009-07-15 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
PCT/EP2010/059217 WO2011006754A1 (de) 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Publications (1)

Publication Number Publication Date
EP2454765A1 true EP2454765A1 (de) 2012-05-23

Family

ID=42670645

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10725804A Withdrawn EP2454765A1 (de) 2009-07-15 2010-06-29 Leuchtdiode und verfahren zur herstellung einer leuchtdiode

Country Status (7)

Country Link
US (1) US8581288B2 (enrdf_load_stackoverflow)
EP (1) EP2454765A1 (enrdf_load_stackoverflow)
JP (1) JP5685249B2 (enrdf_load_stackoverflow)
KR (1) KR101649287B1 (enrdf_load_stackoverflow)
CN (1) CN102473825B (enrdf_load_stackoverflow)
DE (1) DE102009033287A1 (enrdf_load_stackoverflow)
WO (1) WO2011006754A1 (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010026344A1 (de) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
EP2782150B1 (en) * 2011-11-17 2018-08-15 Lumens Co., Ltd. Light emitting device package and backlight including same
WO2015068072A1 (en) * 2013-11-07 2015-05-14 Koninklijke Philips N.V. Substrate for led with total-internal reflection layer surrounding led
US10246348B2 (en) 2015-06-08 2019-04-02 Rayvio Corporation Ultraviolet disinfection system
US9540252B1 (en) 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
US9834456B2 (en) 2015-06-08 2017-12-05 Rayvio Corporation Ultraviolet disinfection system
DE102017110850B4 (de) * 2017-05-18 2024-12-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI648878B (zh) * 2018-05-15 2019-01-21 東貝光電科技股份有限公司 Led發光源、led發光源之製造方法及其直下式顯示器
DE102018132542A1 (de) 2018-12-17 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung und herstellungsverfahren
CN113228312B (zh) 2018-12-27 2024-08-13 波主有限公司 半导体发光器件
KR20200129867A (ko) * 2019-05-10 2020-11-18 안상정 반도체 발광소자
CN113544861B (zh) * 2019-03-08 2024-08-27 奥斯兰姆奥普托半导体有限责任公司 用于生产光电半导体器件的方法以及光电半导体器件
KR102737389B1 (ko) * 2020-04-17 2024-12-03 닝보 선푸 엘이디 컴퍼니 리미티드 자외선 ｌｅｄ 장치
WO2024227770A1 (en) * 2023-05-03 2024-11-07 Ams-Osram International Gmbh Package for a semiconductor chip, optoelectronic semiconductor device, method for manufacturing a package for a semiconductor chip and method for manufacturing an optoelectronic semiconductor device
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
DE102023136869A1 (de) * 2023-12-29 2025-07-03 Ams-Osram International Gmbh Herstellung eines strahlungsemittierenden bauelements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006135496A2 (en) * 2005-06-10 2006-12-21 Cree, Inc. Led package

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JP3003500B2 (ja) 1994-04-28 2000-01-31 ダイキン工業株式会社 ポリテトラフルオロエチレン複合多孔膜
US5596450A (en) * 1995-01-06 1997-01-21 W. L. Gore & Associates, Inc. Light reflectant surface and method for making and using same
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US6950220B2 (en) * 2002-03-18 2005-09-27 E Ink Corporation Electro-optic displays, and methods for driving same
US20040032728A1 (en) * 2002-08-19 2004-02-19 Robert Galli Optical assembly for LED chip package
WO2004087889A1 (en) 2003-04-04 2004-10-14 Novozymes A/S Mash viscosity reduction
JP4183175B2 (ja) * 2003-04-21 2008-11-19 京セラ株式会社 発光素子収納用パッケージおよび発光装置
DE102004014207A1 (de) 2004-03-23 2005-10-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper
DE102004053116A1 (de) * 2004-11-03 2006-05-04 Tridonic Optoelectronics Gmbh Leuchtdioden-Anordnung mit Farbkonversions-Material
US7537374B2 (en) * 2005-08-27 2009-05-26 3M Innovative Properties Company Edge-lit backlight having light recycling cavity with concave transflector
US8525402B2 (en) 2006-09-11 2013-09-03 3M Innovative Properties Company Illumination devices and methods for making the same
US7601989B2 (en) * 2007-03-27 2009-10-13 Philips Lumileds Lighting Company, Llc LED with porous diffusing reflector
CN101681056B (zh) * 2007-05-20 2013-03-27 3M创新有限公司 中空光循环腔型显示器背光源
JP2009032943A (ja) 2007-07-27 2009-02-12 Japan Gore Tex Inc 発光素子用プリント配線基板
WO2009075530A2 (en) * 2007-12-13 2009-06-18 Amoleds Co., Ltd. Semiconductor and manufacturing method thereof
EP2255231A1 (en) * 2008-02-07 2010-12-01 3M Innovative Properties Company Hollow backlight with structured films
WO2009105450A1 (en) * 2008-02-22 2009-08-27 3M Innovative Properties Company Backlights having selected output light flux distributions and display systems using same

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Also Published As

Publication number Publication date
JP5685249B2 (ja) 2015-03-18
DE102009033287A1 (de) 2011-01-20
WO2011006754A1 (de) 2011-01-20
US20120132947A1 (en) 2012-05-31
KR20120039023A (ko) 2012-04-24
US8581288B2 (en) 2013-11-12
CN102473825A (zh) 2012-05-23
JP2012533182A (ja) 2012-12-20
KR101649287B1 (ko) 2016-08-18
CN102473825B (zh) 2015-02-25

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