EP2454765A1 - Diode luminescente et procédé de fabrication d'une diode luminescente - Google Patents
Diode luminescente et procédé de fabrication d'une diode luminescenteInfo
- Publication number
- EP2454765A1 EP2454765A1 EP10725804A EP10725804A EP2454765A1 EP 2454765 A1 EP2454765 A1 EP 2454765A1 EP 10725804 A EP10725804 A EP 10725804A EP 10725804 A EP10725804 A EP 10725804A EP 2454765 A1 EP2454765 A1 EP 2454765A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- light
- emitting diode
- carrier
- reflective element
- diode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 31
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 31
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 31
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 29
- 239000004033 plastic Substances 0.000 claims description 26
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000012815 thermoplastic material Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 229920001169 thermoplastic Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004416 thermosoftening plastic Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Definitions
- Lumineszenzkonversionsmaterial is emitted.
- the radiation of the luminescence conversion material is preferably excited by the electromagnetic radiation of the at least one light-emitting diode chip of the light-emitting diode.
- the reflective element is for example for diffuse reflection of
- this non-visible radiation is reflected by the reflective element comprising porous polytetrafluoroethylene, preferably non-directional.
- Reflection of electromagnetic radiation is provided, wherein the reflective element is attached to the carrier and the reflective element comprises porous polytetrafluoroethylene.
- Light-emitting diode as described here, can be produced. That is, all the features described for the light emitting diode are also disclosed for the method and vice versa.
- a carrier which at least in places comprises a thermoplastic. That is, at least locations of the outer surface of the carrier are with a
- the light-emitting diode according to the exemplary embodiment of FIG. 2 comprises three light-emitting diode chips 2 a, 2 b, 2 c, which may be suitable, for example, for generating blue, red and green light.
- the bottom plate 10 is formed as a printed circuit board.
- the bottom plate 10 is formed of a ceramic material to which
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
L'invention concerne une diode luminescente, comprenant : - un substrat (1) qui possède une surface de montage (1a) ; - au moins une puce de diode luminescente (2, 2a, 2b, 2c) qui est fixée sur la surface de montage (1a) ; et un élément réfléchissant (3) qui est prévu pour réfléchir un rayonnement électromagnétique (4). L'élément réfléchissant (4) est fixé sur le substrat (1) et l'élément réfléchissant (3) comprend du polytétrafluoréthylène poreux.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009033287A DE102009033287A1 (de) | 2009-07-15 | 2009-07-15 | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
PCT/EP2010/059217 WO2011006754A1 (fr) | 2009-07-15 | 2010-06-29 | Diode luminescente et procédé de fabrication d'une diode luminescente |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2454765A1 true EP2454765A1 (fr) | 2012-05-23 |
Family
ID=42670645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10725804A Withdrawn EP2454765A1 (fr) | 2009-07-15 | 2010-06-29 | Diode luminescente et procédé de fabrication d'une diode luminescente |
Country Status (7)
Country | Link |
---|---|
US (1) | US8581288B2 (fr) |
EP (1) | EP2454765A1 (fr) |
JP (1) | JP5685249B2 (fr) |
KR (1) | KR101649287B1 (fr) |
CN (1) | CN102473825B (fr) |
DE (1) | DE102009033287A1 (fr) |
WO (1) | WO2011006754A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009058421A1 (de) * | 2009-12-16 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
WO2013073897A2 (fr) | 2011-11-17 | 2013-05-23 | 주식회사 루멘스 | Boîtier de dispositif électroluminescent et rétroéclairage le comprenant |
EP3066698B1 (fr) * | 2013-11-07 | 2022-05-11 | Lumileds LLC | Substrat avec une couche de reflexion totale contournant une diode électro-luminescente |
US10246348B2 (en) | 2015-06-08 | 2019-04-02 | Rayvio Corporation | Ultraviolet disinfection system |
US9540252B1 (en) * | 2015-06-08 | 2017-01-10 | Rayvio Corporation | Ultraviolet disinfection system |
US9834456B2 (en) | 2015-06-08 | 2017-12-05 | Rayvio Corporation | Ultraviolet disinfection system |
DE102017110850A1 (de) * | 2017-05-18 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
DE102018132542A1 (de) | 2018-12-17 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung und herstellungsverfahren |
KR20200129867A (ko) * | 2019-05-10 | 2020-11-18 | 안상정 | 반도체 발광소자 |
CN113544861B (zh) * | 2019-03-08 | 2024-08-27 | 奥斯兰姆奥普托半导体有限责任公司 | 用于生产光电半导体器件的方法以及光电半导体器件 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006135496A2 (fr) * | 2005-06-10 | 2006-12-21 | Cree, Inc. | Boîtier de voyant d'alimentation |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3003500B2 (ja) | 1994-04-28 | 2000-01-31 | ダイキン工業株式会社 | ポリテトラフルオロエチレン複合多孔膜 |
US5596450A (en) * | 1995-01-06 | 1997-01-21 | W. L. Gore & Associates, Inc. | Light reflectant surface and method for making and using same |
DE10153259A1 (de) | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US6950220B2 (en) * | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US20040032728A1 (en) * | 2002-08-19 | 2004-02-19 | Robert Galli | Optical assembly for LED chip package |
EP1613729A1 (fr) | 2003-04-04 | 2006-01-11 | Novozymes A/S | Reduction de la viscosite du brassin |
JP4183175B2 (ja) | 2003-04-21 | 2008-11-19 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
DE102004014207A1 (de) * | 2004-03-23 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper |
DE102004053116A1 (de) | 2004-11-03 | 2006-05-04 | Tridonic Optoelectronics Gmbh | Leuchtdioden-Anordnung mit Farbkonversions-Material |
US7537374B2 (en) * | 2005-08-27 | 2009-05-26 | 3M Innovative Properties Company | Edge-lit backlight having light recycling cavity with concave transflector |
US8525402B2 (en) * | 2006-09-11 | 2013-09-03 | 3M Innovative Properties Company | Illumination devices and methods for making the same |
US7601989B2 (en) * | 2007-03-27 | 2009-10-13 | Philips Lumileds Lighting Company, Llc | LED with porous diffusing reflector |
WO2008144656A2 (fr) * | 2007-05-20 | 2008-11-27 | 3M Innovative Properties Company | Rétroéclairage et système d'affichage utilisant celui-ci |
JP2009032943A (ja) * | 2007-07-27 | 2009-02-12 | Japan Gore Tex Inc | 発光素子用プリント配線基板 |
WO2009075530A2 (fr) * | 2007-12-13 | 2009-06-18 | Amoleds Co., Ltd. | Semi-conducteur et son procédé de fabrication |
KR101571576B1 (ko) * | 2008-02-07 | 2015-11-24 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 구조화된 필름을 구비한 중공형 백라이트 |
US9541698B2 (en) * | 2008-02-22 | 2017-01-10 | 3M Innovative Properties Company | Backlights having selected output light flux distributions and display systems using same |
-
2009
- 2009-07-15 DE DE102009033287A patent/DE102009033287A1/de not_active Withdrawn
-
2010
- 2010-06-29 WO PCT/EP2010/059217 patent/WO2011006754A1/fr active Application Filing
- 2010-06-29 KR KR1020127004034A patent/KR101649287B1/ko active IP Right Grant
- 2010-06-29 EP EP10725804A patent/EP2454765A1/fr not_active Withdrawn
- 2010-06-29 US US13/382,313 patent/US8581288B2/en not_active Expired - Fee Related
- 2010-06-29 CN CN201080031876.2A patent/CN102473825B/zh not_active Expired - Fee Related
- 2010-06-29 JP JP2012519958A patent/JP5685249B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006135496A2 (fr) * | 2005-06-10 | 2006-12-21 | Cree, Inc. | Boîtier de voyant d'alimentation |
Also Published As
Publication number | Publication date |
---|---|
KR101649287B1 (ko) | 2016-08-18 |
WO2011006754A1 (fr) | 2011-01-20 |
JP2012533182A (ja) | 2012-12-20 |
CN102473825B (zh) | 2015-02-25 |
JP5685249B2 (ja) | 2015-03-18 |
US20120132947A1 (en) | 2012-05-31 |
DE102009033287A1 (de) | 2011-01-20 |
CN102473825A (zh) | 2012-05-23 |
US8581288B2 (en) | 2013-11-12 |
KR20120039023A (ko) | 2012-04-24 |
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Legal Events
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17Q | First examination report despatched |
Effective date: 20160415 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20160826 |