EP2419779A1 - Linse, optoelektronisches bauelement aufweisend eine linse und verfahren zur herstellung einer linse - Google Patents

Linse, optoelektronisches bauelement aufweisend eine linse und verfahren zur herstellung einer linse

Info

Publication number
EP2419779A1
EP2419779A1 EP10716457A EP10716457A EP2419779A1 EP 2419779 A1 EP2419779 A1 EP 2419779A1 EP 10716457 A EP10716457 A EP 10716457A EP 10716457 A EP10716457 A EP 10716457A EP 2419779 A1 EP2419779 A1 EP 2419779A1
Authority
EP
European Patent Office
Prior art keywords
lens
potting material
radiation
main surface
base body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10716457A
Other languages
German (de)
English (en)
French (fr)
Inventor
Thomas Bemmerl
Ulrich Streppel
Bert Braune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2419779A1 publication Critical patent/EP2419779A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/65—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/04—Refractors for light sources of lens shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/14—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing polarised light
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/40—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters with provision for controlling spectral properties, e.g. colour, or intensity
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0278—Diffusing elements; Afocal elements characterized by the use used in transmission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0045—Devices characterised by their operation the devices being superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

Definitions

  • Lens, optoelectronic component having a lens and method for producing a lens
  • the present invention relates to a lens with a base body, an optoelectronic component with a light source and such a lens and a method for producing such a lens.
  • the invention has for its object to provide an improved lens that meets the above requirements.
  • a further object of the invention is to specify an optoelectronic component which has an improved emission characteristic, in particular a homogeneous overall impression.
  • a lens which has a
  • Base body and a potting material includes.
  • the main body has a first main surface, a second main surface and at least one cavity, which is arranged on the first main surface.
  • the potting material is arranged in the cavity of the base body and has at least one diffuser which scatters radiation of at least one wavelength range.
  • the lens has, in particular, at least two partial regions: the main body and the cavity with potting material arranged therein.
  • the main body has a lens shape that allows a light guide of radiation entering the lens.
  • the base body is designed in the manner of a converging lens or a Fresnel lens.
  • the base body has no diffuser, so that radiation entering the main body is conducted in the main body without being subject to scattering processes.
  • Radiation that enters the potting material is scattered at the diffuser.
  • Radiation is diffusely scattered at the diffuser.
  • the lens has at least two partial regions, which differ in particular by the degree of spreading of the material. This allows at least two different in the number of scattering processes beam paths in the lens.
  • the homogeneous visual appearance of the lens can be adapted to the requirements of lens design depending on the special arrangement of the cavity in the base body. A minimization of optical Auskoppelmannen while maintaining the radiation characteristics is possible with advantage.
  • such a lens therefore has at least two light paths, which differ in particular on the basis of the scattering processes.
  • a lens which has different properties in terms of scattering and refraction can thus be achieved with advantage.
  • the volume fraction of the lens having a diffuser can be minimized.
  • the entire main body has a diffuser, but only the potting material in the lens, in particular directly above the light source, in which this requirement is desired.
  • the cavity is completely filled by the potting material.
  • the potting material preferably ends flush with the first main surface of the base body.
  • no elevations or depressions are formed between the potting material and the first main surface.
  • the first main surface of the main body is in particular seamless and flush in the of the main body opposite surface of the potting material over. A continuous interface between the lens and the surrounding medium, which has no irregularities, in particular in the transition between the potting material and the base body, can thus be achieved with advantage.
  • the surface facing away from the base body of the potting material may have a curvature, in particular a concave or convex curvature.
  • a curvature in particular a concave or convex curvature.
  • an unevenness for example a step, can occur in the transition between the casting material and the base body.
  • a flush completion of the potting material with the first major surface of the body is not mandatory in this case.
  • the proportion of potting material on the lens is preferably not more than 20%, preferably not more than 10%, particularly preferably not more than 5%.
  • the fraction of the green body on the lens is thus preferably more than 80%, preferably more than 90%, particularly preferably more than
  • the potting material is epoxy resin.
  • the main body of the lens preferably comprises silicone, epoxy or a mixture of silicone and epoxy.
  • the base body may contain thermoplastic or thermoset materials such as PMMA (PMMA: polymethyl methacrylate) or PC (PC: polycarbonates).
  • PMMA polymethyl methacrylate
  • PC PC: polycarbonates
  • the refractive index of the material of the base body is similar to the refractive index of the potting material.
  • the refractive index of the material of the base body differs from the refractive index of the casting material by not more than 10%.
  • the main body and the potting material contain the same material.
  • the potting material and the body are in direct contact.
  • the base body and the potting material adjoin one another directly and there is no space or gap at the interface between the base body and potting material.
  • the first main surface has a curvature at least in places.
  • the first main surface is not flat.
  • the first major surface has a concave curvature or a convex curvature.
  • the first major surface is curved in places.
  • the second main surface has coupling-out structures.
  • the coupling-out structures are roughenings of the second main surface.
  • radiation penetrating the lens may be scattered on exiting the lens at the second major surface. Radiation is preferred diffused at the roughening of the second major surface. As a result, radiation which is guided by such a lens has an improved, in particular homogeneous, emission characteristic upon exiting the lens.
  • the base body has at least one reflective subregion.
  • the base body has two reflective subregions.
  • the two reflective portions are disposed on the first major surface and spaced from the cavity.
  • the reflective subregion of the base body may be a projection which has a shape such that radiation entering the reflective subregion is reflected, for example, at an interface of the reflective subregion.
  • the reflective portion may have surfaces coated with a reflective material.
  • the base body is formed at least in places in the manner of a Fresnel lens.
  • a Fresnel lens has, in particular, a plurality of steps on one of the main surfaces.
  • the first main surface preferably has the plurality of steps.
  • the first stage of the Fresnel lens forms the cavity of the base body.
  • the first stage of the Fresnel lens is, in particular, the middlemost stage on the first major surface of the lens.
  • the base body has at least one further cavity, which at the first Main surface is arranged and contains a potting material having at least one diffuser.
  • the number of further cavities with potting material contained therein preferably depends on the particular requirement and / or use of the lens. A selective diffusing of any lens areas depending on the given homogeneity requirement and design requirement of the lens is thus advantageously possible.
  • Basic body at least one converter.
  • the converter converts light of one wavelength into light of another wavelength.
  • the converter converts blue radiation at least partially into yellow radiation, which then mixes together with the blue radiation and enables white mixed radiation.
  • an optoelectronic component which has at least one lens and at least one light source, wherein the light source is arranged on the side of the first main surface.
  • the lens of the optoelectronic component is designed as disclosed in connection with one of the embodiments described above. That is, all features disclosed in connection with the lens are also disclosed for the lens of the optoelectronic device and vice versa.
  • the light source is arranged in particular on the side of the first main surface.
  • the first main surface thus forms a radiation entrance surface for radiation emitted by the light source.
  • the second major surface of the lens forms a radiation exit surface for that of the light source emitted and passed through the lens radiation.
  • the radiation entrance surface accordingly has the cavity with potting material contained therein.
  • the potting material contained in the diffuser is arranged upstream of the base body such that radiation which penetrates the potting material is subsequently conducted in the base body.
  • the potting material is thus arranged between the light source and the base body. Scattering processes of the radiation emitted by the light source thus occur
  • the optoelectronic component described here is based inter alia on the recognition that the
  • Abstrahl characterizing of components in combination with a clear lens has disturbing intensity peaks in the spatial radiation.
  • the device described here makes use of the idea of combining a potting material contained with a diffuser with a clear-sighted basic body. Due to the non-directional scattering of the radiation at the diffuser, the disturbing intensity peaks in the emission characteristic are advantageously avoided. As a result of the scattering of the emitted radiation at the diffuser, the color homogeneity is further improved and the electromagnetic radiation is smoothed in its intensities.
  • Color homogeneity is in particular the stability of the color locus via the spatial radiation through the surface of the component.
  • the effect can be avoided by such a lens that in the off state of the device, the light source for a viewer is visible, especially yellow.
  • This effect occurs in particular with white-emitting LED chips having a chip and a converter.
  • the component comprising a lens and a light source is accordingly designed such that the light source, in particular a white-emitting LED chip, is not visible in the switched-off state of the component.
  • such a lens fulfills the requirement to further ensure the emission of the LED chip in the switched-on state.
  • the potting material is disposed on any outside of the device.
  • the potting material with the diffuser contained therein is advantageously protected against mechanical and / or chemical influences.
  • Mechanical and / or chemical influences include, for example, impacts, penetration of liquid into the potting material or scratching of the potting material.
  • the light source is preferably arranged directly opposite the cavity of the base body.
  • the lateral extent of the cavity is less than or equal to the lateral extent of the light source.
  • the lateral extent is the extent that extends along the first major surface.
  • the light source is arranged outside the cavity of the base body.
  • the light source is arranged at a distance from the lens.
  • the light source can be arranged within the cavity of the base body.
  • the potting material completely surrounds the light source.
  • the light source is a light emitting diode (LED).
  • LED light emitting diode
  • a method for producing a lens is specified.
  • a lens can be produced, as disclosed in connection with one of the embodiments described above. That is, all features disclosed in connection with the lens or the device are also disclosed for the method and vice versa.
  • the potting material is introduced into the cavity by means of dispensing technology.
  • the potting material is introduced in droplet form.
  • this is a syringe or a pipette use.
  • the diffuser is preferably mixed before introducing the potting material into the cavity with the potting material.
  • the diffuser is distributed in the potting material such that the concentration of the diffuser is evenly distributed in the potting material.
  • FIGS. 1 to 3 each show a schematic cross section of an exemplary embodiment of an optoelectronic component according to the invention
  • FIG. 4 shows a schematic cross-section of an embodiment of a lens according to the invention during the process step of dispensing
  • FIGS. 5A, 5B each show a schematic cross section of an embodiment of a lens according to the invention.
  • FIG. 1 shows a schematic cross section of an optoelectronic component comprising a lens 1 and a light source 5.
  • the lens 1 has a first main surface 21 and a second main surface 22.
  • the light source 5 is in particular arranged upstream of the first main surface 21.
  • the first main surface 21 is accordingly a radiation entrance surface for radiation emitted by the light source 5.
  • Main surface 22 is a radiation exit surface for radiation emitted by the light source 5.
  • the light source 5 is preferably a semiconductor body and has an active layer.
  • the active layer of the light source 5 is preferably a semiconductor body and has an active layer.
  • Semiconductor body preferably has a pn junction, a double heterostructure, a single quantum well (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation.
  • SQW single quantum well
  • MQW multiple quantum well structure
  • the semiconductor body is preferably a light-emitting diode chip, in particular a light-emitting diode.
  • the semiconductor body is preferably a thin-film semiconductor body.
  • a thin-film semiconductor body is in the context of the application Semiconductor body, during its production, the growth substrate on which a semiconductor layer sequence comprising the semiconductor body, for example epitaxially grown, has been detached.
  • the layers of the semiconductor body are preferably based on a III / V compound semiconductor material.
  • a III / V compound semiconductor material has at least one element of the third main group such as Al, Ga, In, and a fifth main group element such as N, P, As.
  • the term III / V compound semiconductor material includes the group of binary, ternary and quaternary compounds containing at least one element from the third main group and at least one element from the fifth main group, in particular nitride and phosphide compound semiconductors.
  • Such a binary, ternary and quaternary compound may additionally have, for example, one or more dopants and additional constituents.
  • the light source 5 also has a radiation exit side through which radiation generated in the light source can leave the light source 5.
  • the radiation exit side of the light source 5 in particular faces the radiation entrance surface 21 of the lens.
  • the lens 1 has a base body 23, in which a cavity 3 is formed.
  • the cavity 3 is at the first
  • Main surface 21 arranged and in particular the light source 5 faces.
  • the cavity 3 of the radiation exit side of the light source 5 is directly opposite.
  • the lateral extent of the cavity 3 is less than or equal to the lateral extent of the light source 5.
  • a potting material 4 is arranged, which has at least one diffuser which scatters radiation of at least one wavelength range.
  • the diffuser has the property to scatter radiation emitted by the light source 5.
  • the light source 5 is preferably arranged outside the cavity 3 of the main body 23. Preferably, the light source 5 is arranged at a distance from the lens 1.
  • the light source 5 is thus preferably not enclosed by the potting material 4, but is spaced from the potting material 4.
  • the lens 1 is in particular an independent component of the optoelectronic component and can preferably be manufactured separately.
  • the cavity 3 is preferably completely filled with the potting material 4.
  • the filling level of the potting material 4 in the cavity 3 is therefore dimensioned such that after curing of the potting material 4, the surface of the potting material 4 is preferably flush with the
  • a lens 1 which has a main body 23 and a potting material 4 with diffuser contained therein,
  • the light guidance in the lens 1 improves.
  • the emission characteristic of the component improves.
  • a homogeneous allows itself so with advantage.
  • the lens 1 comprising a base body 23 and a potting material 4 with diffuser contained therein avoided the effect that in the off state of the device, the light source 5 is visible to an observer, in particular appears yellow.
  • the lens 1 fulfills the requirement to further ensure the emission of the light source 5 in the switched-on state, in particular not to shade the emitted radiation of the light source 5.
  • the lens 1 thus has the property that in the off state of the device, the light source 5 is not visible to the viewer, wherein the lens 1 in the on state of the device for the radiation emitted by the light source 5 radiation-permeable properties and at the same time the radiation characteristics of Improved component.
  • the lens 1 due to the structure of base body 23 and potting material 4 may have different sub-areas, each allowing different light paths. Radiation passing through the first
  • Main surface 21 enters the base body 23 of the lens 1 is passed without scattering processes in the lens 1 to the second main surface 22 and can emerge at the second main surface 22 of the lens 1.
  • Radiation entering the potting material 4 at the first major surface 21 is scattered in the potting material 4, particularly at the diffuser disposed therein.
  • Radiation is diffusely scattered in the potting material 4.
  • the in the Potting material 4 diffusely scattered radiation is then passed in the main body 23 to the second main surface 22 and exits there from the lens 1.
  • the cavity with potting material 4 contained therein is arranged directly opposite the radiation exit side of the light source 5, hotspots in the emission characteristic of the component can be reduced or even avoided by the diffuse scattering processes in the potting material 4. In particular, can be due to the diffuse scattering a homogeneous
  • Distribution of the radiation emitted by the light source 5 and passes through the lens 1, are made possible.
  • FIG. 1 shows two examples of possible beam paths.
  • Radiation 7 incident on the first major surface 21 enters the body 23 at the first major surface 21, is guided in the body 23 to the second major surface 22 without being scattered in the body, and exits the lens 1 at the second Main surface 22.
  • the radiation 7 does not pass through the potting material 4 and is therefore not scattered in the lens 1.
  • Radiation 6 entering the potting material 4 at the first major surface 21 is applied to the diffuser in the potting material 4
  • Potting material 4 diffused.
  • the diffused scattered radiation 6a, 6b, 6c, 6d passes from the potting material 4 into the main body 23, where it is conducted to the second main surface 22, and exits at the second main surface 22 as diffused radiation 6a, 6b, 6c, 6d.
  • the lens 1 therefore has two light paths, a light path in which radiation is not subject to scattering processes and a second light path that passes through the cavity and the potting material 4 contained therein and experiences in this scattering process.
  • a homogeneous radiation characteristic of the radiation emerging from the lens 1 can be achieved.
  • the lens 1 can be formed by targeted arrangement of the cavity 3 in the base body 23 so that it meets predetermined homogeneity requirements and design requirements.
  • the main body 23 may in particular a plurality of
  • the potting material 4 is preferably epoxy resin.
  • the main body 23 preferably comprises silicone, an epoxy or a mixture of silicone and epoxy.
  • the base body 23 at least one thermoplastic material such as PMMA (PMMA: polymethyl methacrylate) or PC
  • PC polycarbonates
  • the refractive index of the material of the potting material 4 is preferably similar to the refractive index of the material of the base body 23. It is also possible that the potting material 4 and the base body 23 contain the same material. As a result, the radiation emitted by the light source 5 is advantageously not refracted or reflected at the interface between the casting material 4 and the base body 23. Optical Auskoppellage can be minimized with advantage.
  • a mechanical or chemical stress is to be understood in particular as mechanical or chemical environmental influences, such as, for example, moisture, impacts and / or scratching.
  • the lens may further comprise a converter for radiation conversion of the radiation emitted by the light source 5 (not shown). As a result, it is possible to emit mixed radiation of the component, in particular the emission of white light.
  • the first main surface 21 preferably has at least in places a curvature or a curvature.
  • the first main surface 21 is formed bent.
  • the first major surface 21 may have a curvature designed for use as a condenser lens. The curvature of the first main surface 21 depends in particular on the intended use of the lens 1.
  • FIG. 2 differs from the exemplary embodiment of FIG. 1 in that the second main surface 22 has coupling-out structures.
  • the second main surface 22 has a roughening 8. Radiation emitted by the light source 5, which is conducted in the lens 1, is thereby at the second before exiting the lens 1 Main surface 22 diffused. This further improves the emission characteristics of the device. In particular, this enables an improved homogeneous emission characteristic of the component.
  • Examples of possible beam paths through the lens 1 are as shown in Figure 1 by arrows 6, 7, 6a, 6b, 6c, 7a, 7b, 7c.
  • the beam 7 which does not pass through the potting material 4 and which is guided undisrupted in the lens 1, is diffusely scattered at the second main surface 22, in particular at the roughening 8, so that the beam 7 is divided into a plurality of scattered radiation beams 7a, 7b, 7c divides.
  • Potting material 4 is scattered so that even before light guide in the lens 1, a plurality of scattered radiation 6a, 6b, 6c arise, is also scattered at the roughening 8 each so that the scattered radiation 6a, 6b, 6c each decompose into further scattered radiation.
  • Radiation, which therefore does not pass through the potting material 4, is only diffusely scattered at the second major surface 22. Radiation passing through the potting material 4, on the other hand, is scattered in the potting material 4, the diffuser, and the second major surface 22. A homogeneous radiation characteristic of the passing through the lens 1 radiation 6, 7 is thus possible with advantage.
  • the embodiment of Figure 3 differs from the embodiment of Figure 1 in that the base body 23 has reflective portions 9a, 9b.
  • the reflective subregions 9a, 9b are on the first major surface 21 and laterally spaced from the cavity 3.
  • the lateral sections 9a, 9b may preferably have a height such that they surround the light source 5.
  • Radiation emitted by the light source 5 can be reflected at the reflecting subregions 9a, 9b in such a way that the appearance, in particular the
  • Examples of possible beam paths are again shown by arrows 6, 6a, 6b, 6c, 6d, 7, 7a, 7b.
  • a beam 7 emitted by the light source 5 enters one of the reflective subareas 9a, is guided in the reflective subarea 9a as a beam 7a, strikes the first main surface 21, which in particular has reflective properties, is reflected at this main surface 21, that the beam is guided in the direction of the second main surface 22 and emerges from the lens 1 at the second main surface 22 as a beam 7b. Accordingly, this jet 7 is not conducted through the potting material 4 and thus experiences no scattering processes in the lens 1.
  • the reflective properties of the reflective subregions 9a, 9b can be realized, for example, by means of a reflective coating 10 applied to the first main surface 21. Alternatively, by the refractive index difference between reflective
  • Subregions 9a, 9b and surrounding medium a reflection can be achieved.
  • the embodiment of Figure 4 illustrates a cross section of a lens 1 in the manufacturing process.
  • the lens of the embodiment of Figure 4 is formed in the manner of a Fresnel lens.
  • a Fresnel lens has, in particular on a main surface, in this case the first main surface 21, a plurality of steps 12a, 12b, 12c.
  • the second main surface 22 may be flat.
  • the cavity of the base body 23 is preferably formed by the first stage 12a of the Fresnel lens.
  • the first stage 12a of the Fresnel lens is in particular the centermost stage of the lens.
  • the first step 12a has a height H which is filled with the potting material 4.
  • the filling level of the potting material 4 may be smaller than the height H of the first stage 12a (not shown). In this case, the potting material 4 does not completely fill the height H of the first stage 12a, so that radiation can be introduced into the Fresnel structure, in particular into the first stage 12a, which advantageously contributes to an improved efficiency of the optics.
  • the potting material 4 is preferably introduced by means of Dispenstechnik in the cavity. For this purpose, the potting material 4 is dripped into the cavity 3, for example. The dripping can be carried out, for example, by means of a syringe 11 or a pipette 11.
  • the temperature of the potting material 4 in the process step of dispensing is preferably below the melting temperature of the material of the base body 23.
  • the potting material 4 is then cured by means of cooling.
  • the potting material 4 can be introduced into the cavity 3 by means of a jetting process (not shown).
  • FIGS. 5A and 5B each show a lens 1 comprising a main body 23 and a potting material 4.
  • the potting material 4 does not terminate flush with the first main surface 21 of the base body 23.
  • the surface of the potting material 4 facing away from the base body 23 has a curvature. For example, that of the
  • Base 23 remote from the surface of the potting material 4 may be formed in the manner of a converging lens or a diverging lens, depending on the intended use of the lens first
  • FIG. 5B shows a lens 1, in which the surface facing away from the base 23 of the potting material 4 has a convex curvature.
  • a predetermined, in particular desired light guide can be achieved in this region of the lens 1.
  • a bundling of radiation or a dispersion of radiation can be achieved in certain areas.
  • the invention is not limited by the description based on the embodiments of these, but includes each new feature and any combination of features, which in particular includes any combination of features in the claims, even if this feature or this combination itself is not explicitly in the claims Embodiments is given.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
EP10716457A 2009-04-17 2010-03-05 Linse, optoelektronisches bauelement aufweisend eine linse und verfahren zur herstellung einer linse Withdrawn EP2419779A1 (de)

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DE200910017946 DE102009017946A1 (de) 2009-04-17 2009-04-17 Linse, optoelektronisches Bauelement aufweisend eine Linse und Verfahren zur Herstellung einer Linse
PCT/DE2010/000251 WO2010118718A1 (de) 2009-04-17 2010-03-05 Linse, optoelektronisches bauelement aufweisend eine linse und verfahren zur herstellung einer linse

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US (1) US8848297B2 (ja)
EP (1) EP2419779A1 (ja)
JP (1) JP2012524287A (ja)
KR (1) KR20120008057A (ja)
CN (1) CN102395913A (ja)
DE (1) DE102009017946A1 (ja)
TW (1) TWI426301B (ja)
WO (1) WO2010118718A1 (ja)

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DE102009017946A1 (de) 2010-10-21
TW201106018A (en) 2011-02-16
US8848297B2 (en) 2014-09-30
US20120162783A1 (en) 2012-06-28
KR20120008057A (ko) 2012-01-25
JP2012524287A (ja) 2012-10-11
CN102395913A (zh) 2012-03-28
TWI426301B (zh) 2014-02-11
WO2010118718A1 (de) 2010-10-21

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