EP2415902A3 - Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat - Google Patents

Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat Download PDF

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Publication number
EP2415902A3
EP2415902A3 EP11075187A EP11075187A EP2415902A3 EP 2415902 A3 EP2415902 A3 EP 2415902A3 EP 11075187 A EP11075187 A EP 11075187A EP 11075187 A EP11075187 A EP 11075187A EP 2415902 A3 EP2415902 A3 EP 2415902A3
Authority
EP
European Patent Office
Prior art keywords
substrate
producing
nanocrystalline
cuscn layer
cuscn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11075187A
Other languages
English (en)
French (fr)
Other versions
EP2415902A2 (de
EP2415902A8 (de
Inventor
Björn Latzel
Abdelhak Belaidi
Klaus Schwarzburg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Original Assignee
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH filed Critical Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Publication of EP2415902A2 publication Critical patent/EP2415902A2/de
Publication of EP2415902A3 publication Critical patent/EP2415902A3/de
Publication of EP2415902A8 publication Critical patent/EP2415902A8/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)

Abstract

Bei dem Verfahren zur Herstellung einer dünnen nanokristallinen CuSCN-Schicht auf einem Substrat mittels chemischer Badabscheidung wird erfindungsgemäß zunächst eine Substratvorbehandlung zur Aktivierung der Oberfläche durchgeführt und anschließend das Substrat und die wässrige Lösung auf unterschiedliche Temperaturen eingestellt, wobei die Temperatur des Substrats höher eingestellt wird als die Temperatur der Lösung, und eine wässrige Lösung mit 0,1 bis 200 mM Cu(II)- und SCN-lonen verwendet wird.
EP11075187A 2010-08-03 2011-08-02 Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat Withdrawn EP2415902A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201010033198 DE102010033198B4 (de) 2010-08-03 2010-08-03 Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat

Publications (3)

Publication Number Publication Date
EP2415902A2 EP2415902A2 (de) 2012-02-08
EP2415902A3 true EP2415902A3 (de) 2012-03-14
EP2415902A8 EP2415902A8 (de) 2012-04-04

Family

ID=44582029

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11075187A Withdrawn EP2415902A3 (de) 2010-08-03 2011-08-02 Verfahren zur Herstellung einer nanokristallinen CuSCN-Schicht auf einem Substrat

Country Status (2)

Country Link
EP (1) EP2415902A3 (de)
DE (1) DE102010033198B4 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108793197B (zh) * 2018-03-01 2021-08-20 复旦大学 银掺杂硫氰酸亚铜薄膜及其制备方法和应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101109101A (zh) * 2007-07-27 2008-01-23 中国科学院上海硅酸盐研究所 一种液相条件下制备硫氰酸亚铜薄膜的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19910155A1 (de) 1999-02-26 2000-09-07 Hahn Meitner Inst Berlin Gmbh Festkörperbauelement, seine Verwendung und Verfahren zu seiner Herstellung
DE10142913B4 (de) 2001-08-27 2004-03-18 Hahn-Meitner-Institut Berlin Gmbh Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101109101A (zh) * 2007-07-27 2008-01-23 中国科学院上海硅酸盐研究所 一种液相条件下制备硫氰酸亚铜薄膜的方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOHN E. JAFFE ET AL: "Electronic and Defect Structures of CuSCN", JOURNAL OF PHYSICAL CHEMISTRY C, vol. 114, no. 19, 20 May 2010 (2010-05-20), pages 9111 - 9117, XP055017159, ISSN: 1932-7447, DOI: 10.1021/jp101586q *
O'REGAN B ET AL: "A SOLID-STATE DYE-SENSITIZED SOLAR CELL FABRICATED WITH PRESSURE-TREATED P25-TIO2 AND CUSCN: ANALYSIS OF PORE FILLING AND IV CHARACTERISTICS", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, WASHINGTON, US, vol. 14, no. 12, 1 January 2002 (2002-01-01), pages 5023 - 5029, XP008039022, ISSN: 0897-4756, DOI: 10.1021/CM020572D *
SANKAPAL B R ET AL: "Wide band gap p-type windows by CBD and SILAR methods", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 451-452, 22 March 2004 (2004-03-22), pages 128 - 132, XP004495078, ISSN: 0040-6090, DOI: 10.1016/J.TSF.2003.11.002 *

Also Published As

Publication number Publication date
DE102010033198B4 (de) 2013-04-04
DE102010033198A1 (de) 2012-02-09
EP2415902A2 (de) 2012-02-08
EP2415902A8 (de) 2012-04-04

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