EP2412029A4 - Procédé de fabrication d'un substrat semi-conducteur à couche mince tridimensionnel à partir d'un modèle - Google Patents
Procédé de fabrication d'un substrat semi-conducteur à couche mince tridimensionnel à partir d'un modèleInfo
- Publication number
- EP2412029A4 EP2412029A4 EP10756809.9A EP10756809A EP2412029A4 EP 2412029 A4 EP2412029 A4 EP 2412029A4 EP 10756809 A EP10756809 A EP 10756809A EP 2412029 A4 EP2412029 A4 EP 2412029A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- fabricating
- template
- semiconductor substrate
- film semiconductor
- dimensional thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16283009P | 2009-03-24 | 2009-03-24 | |
PCT/US2010/028534 WO2010111417A1 (fr) | 2009-03-24 | 2010-03-24 | Procédé de fabrication d'un substrat semi-conducteur à couche mince tridimensionnel à partir d'un modèle |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2412029A1 EP2412029A1 (fr) | 2012-02-01 |
EP2412029A4 true EP2412029A4 (fr) | 2013-10-02 |
Family
ID=42781482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10756809.9A Withdrawn EP2412029A4 (fr) | 2009-03-24 | 2010-03-24 | Procédé de fabrication d'un substrat semi-conducteur à couche mince tridimensionnel à partir d'un modèle |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2412029A4 (fr) |
MY (1) | MY159267A (fr) |
WO (1) | WO2010111417A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010057060A2 (fr) | 2008-11-13 | 2010-05-20 | Solexel, Inc. | Procédés et systèmes de fabrication de cellules solaires à couche mince |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
KR101396027B1 (ko) | 2011-05-27 | 2014-05-19 | 솔렉셀, 인크. | 고효율 후면 접촉 후면 접합 태양 전지의 이온 주입 및 어닐링 |
CN103137803B (zh) * | 2011-12-03 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103137811B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
CN103137812B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140832A (ja) * | 1997-07-17 | 1999-02-12 | Ion Kogaku Kenkyusho:Kk | 薄膜太陽電池およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2246087A1 (fr) * | 1998-08-28 | 2000-02-28 | Northern Telecom Limited | Methode de decoupe d'une galette de semiconducteurs |
AUPR174800A0 (en) * | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
US8084684B2 (en) * | 2006-10-09 | 2011-12-27 | Solexel, Inc. | Three-dimensional thin-film solar cells |
US20080128641A1 (en) * | 2006-11-08 | 2008-06-05 | Silicon Genesis Corporation | Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials |
-
2010
- 2010-03-24 EP EP10756809.9A patent/EP2412029A4/fr not_active Withdrawn
- 2010-03-24 WO PCT/US2010/028534 patent/WO2010111417A1/fr active Application Filing
- 2010-03-24 MY MYPI2011004548A patent/MY159267A/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140832A (ja) * | 1997-07-17 | 1999-02-12 | Ion Kogaku Kenkyusho:Kk | 薄膜太陽電池およびその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of WO2010111417A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP2412029A1 (fr) | 2012-02-01 |
WO2010111417A1 (fr) | 2010-09-30 |
MY159267A (en) | 2016-12-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20111024 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20130904 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 31/0352 20060101ALI20130829BHEP Ipc: H01L 31/18 20060101AFI20130829BHEP |
|
17Q | First examination report despatched |
Effective date: 20140404 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20141015 |