EP2404324A2 - Cellules solaires à contacts en faces avant et arrière et leur procédé de fabrication - Google Patents

Cellules solaires à contacts en faces avant et arrière et leur procédé de fabrication

Info

Publication number
EP2404324A2
EP2404324A2 EP10706508A EP10706508A EP2404324A2 EP 2404324 A2 EP2404324 A2 EP 2404324A2 EP 10706508 A EP10706508 A EP 10706508A EP 10706508 A EP10706508 A EP 10706508A EP 2404324 A2 EP2404324 A2 EP 2404324A2
Authority
EP
European Patent Office
Prior art keywords
laser
metal
liquid jet
seed layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10706508A
Other languages
German (de)
English (en)
Inventor
Filip Granek
Daniel Kray
Kuno Mayer
Monica Aleman
Sybille Hopmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP2404324A2 publication Critical patent/EP2404324A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing double-sided contacted solar cells, which is based on a microstructuring of a wafer provided with a dielectric layer and a doping of the microstructured regions. Subsequently, the deposition of a metal-containing seed layer and a galvanic reinforcement of the
  • the invention relates to such producible solar cells.
  • the production of solar cells involves a large number of process steps for the precision machining of wafers. These include, inter alia, the emitter diffusion, the application of a dielectric layer and its microstructuring, the doping of the wafer, the contacting, the application of a seed layer and their thickening. With regard to the microstructuring for the front-side contacting, the microstructuring of thin silicon nitride layers (SiN x ) is currently the common application. Such layers are currently the standard antireflective coating in commercial solar cells.
  • the state of the art here is the printing of SiN x layers with a glass frit-containing metal paste. This is first dried, the organic solvent is expelled and then fired at high temperatures (about 900 0 C). The glass frit attacks the SiN x layer, dissolves it locally and thus allows the formation of a silicon-metal contact. Disadvantages of this method are the high contact resistance caused by the glass frit (> 10 -3 ⁇ cm 2 ) and the required high process temperatures, which can reduce both the quality of the passivation layers and those of the silicon substrate.
  • a prior art gentle possibility the SiN x - to open layer locally is combined with wet-chemical etching process in the application of photolithography.
  • a photoresist layer is first applied to the wafer and this patterned via UV exposure and developing.
  • This is followed by a wet-chemical etching step in a hydrofluoric acid-containing or phosphoric acid-containing chemical system which contains the SiN x removed at the locations where the photoresist was opened.
  • a big disadvantage of this method is the enormous effort and the associated costs.
  • this process can not achieve sufficient throughput for solar cell production. For some nitrides, moreover, the method described here can not be used since the etching rates are too low.
  • a local doping can also be done by screen printing a self-doping (eg aluminum-containing) metal paste with subsequent drying and firing at temperatures around 900 0 C.
  • a self-doping eg aluminum-containing
  • the disadvantage of this method is the high mechanical stress of the component, the expensive consumables and the high temperatures to which the entire component is exposed. Furthermore, only structural widths> 100 ⁇ m are possible hereby.
  • Another method uses a blanket SiN x layer, this opens locally by means of laser radiation, and then diffuses the doping in the diffusion furnace.
  • SiN x -MaS- k ist formed only in the laser-opened regions, a highly doped zone.
  • the metallization is formed after the etch back of the resulting phosphosilicate glass (PSG) by electroless deposition in a metal-containing liquid, a disadvantage of this method is the damage introduced by the laser and the etching step required to remove the PSG, and the process consists of several individual steps. which require many handling steps.
  • a method for producing double-sided contacted solar cells in which a) a wafer on the front and the back is at least partially coated with at least one dielectric layer, b) a microstructuring of the at least one dielectric layer takes place, c) a doping of the microstructured surface areas by at least one directed to the surface of the solid and at least one dopant-containing liquid jet is guided over regions of the surface to be doped, the surface being locally or simultaneously heated by a laser beam, d) a metal-containing seed layer being deposited at least in regions on the back side of the wafer, and e) an electrodeposition at least in regions a metallization on the front and the back of the wafer to the two-sided contacting takes place.
  • the microstructuring be accomplished by treating the surface with a dry laser or a water jet guided laser or an etchant containing liquid jet guided laser.
  • a liquid jet-guided laser containing an etchant is carried out in such a way that a liquid jet directed onto the surface of the wafer and containing at least one etchant for the wafer is guided over areas of the surface to be structured, the surface being passed through beforehand or simultaneously a laser beam is heated locally.
  • an agent which has a more corrosive effect on the at least one dielectric layer than on the substrate is preferably selected as etchant.
  • the etchants are particularly preferably selected from the group consisting of H 3 PO 4 , H 3 PO 3 , PCl 3 , PCl 5 , POCl 3 , KOH, HF / HNO 3 , HCl, chlorine compounds, sulfuric acid and mixtures thereof.
  • the liquid jet may particularly preferably be formed from pure or highly concentrated phosphoric acid or else dilute phosphoric acid.
  • the phosphoric acid may e.g. diluted in water or other suitable solvent and used in different concentrations.
  • additives for changing pH e.g., acids or alkalis
  • wetting behavior e.g., surfactants
  • viscosity e.g., alcohols
  • Particularly good results are achieved when using a liquid containing phosphoric acid in a proportion of 50 to 85 wt .-%. In particular, rapid processing of the surface layer can be achieved without damaging the substrate and surrounding areas.
  • the microstructuring according to the invention achieves two things with very little effort.
  • the surface layer in the said areas can be completely removed without damaging the substrate, because the liquid has a less (preferably no) corrosive effect on the latter.
  • the liquid has a less (preferably no) corrosive effect on the latter.
  • local heating of the surface layer in the regions to be removed which Finally, these areas are heated, a well-localized, limited to these areas ablation of the surface layer allows. This results from the fact that the corrosive action of the liquid typically increases with increasing temperature, so that damage to the surface layer in adjacent, unheated areas is largely avoided by possibly reaching there parts of the etching liquid.
  • the dielectric layer deposited on the wafer serves for passivation and / or as an antireflection layer.
  • the dielectric layer is preferably selected from the group consisting of SiN x , SiO 2 , SiO x , MgF 2 , TiO 2 , SiC x and Al 2 O 3 .
  • the doping in step c) is preferably carried out with a liquid jet containing H 3 PO 4 , H 3 PO 3 and / or POCl 3 , into which a laser beam is coupled.
  • the dopant is preferably selected from the group consisting of phosphorus, boron, aluminum, indium, gallium and mixtures thereof, in particular phosphoric acid, phosphorous acid, solutions of phosphates and hydrogen phosphates, borax, boric acid, borates and perborates, boron compounds, gallium compounds and their blends.
  • a further preferred variant provides that the microstructuring and the doping are carried out simultaneously with a liquid-jet-guided laser.
  • a further variant according to the invention comprises that during the precision machining following the microstructuring a doping of the microstructured silicon wafer takes place and the processing reagent contains a dopant.
  • a liquid containing at least one compound which etches the solid material is particularly preferred, since in the same device first the microstructuring and subsequently the doping can be carried out by the exchange of the liquids.
  • the microstructuring can also be carried out by means of an aerosol jet, wherein laser radiation is not necessarily required in this variant, since comparable results can be achieved by preheating the aerosol or its components.
  • the inventive method uses, preferably for microstructuring and doping, a technical system in which a liquid jet, which can be equipped with different chemical systems, serves as a liquid light guide for a laser beam.
  • the laser beam is coupled via a special coupling device in the liquid jet and guided by total internal reflection. In this way, a time and place same supply of chemicals and laser beam to the process stove is guaranteed.
  • the laser light performs various tasks: On the one hand, it is able to locally heat it up at the point of impact on the substrate surface, optionally melting it, and melting it into the surface Extreme case to vaporize.
  • the simultaneous application of chemicals to the heated substrate surface can activate chemical processes that do not occur under standard conditions because they are kinetically inhibited or thermodynamically unfavorable.
  • photochemical activation is also possible, to the extent that the laser light at the surface of the substrate generates electron hole pairs, for example, which can promote or even facilitate the course of redox reactions in this area.
  • the liquid jet In addition to the focusing of the laser beam and the supply of chemicals, the liquid jet also ensures cooling of the marginal areas of the process hearth and rapid removal of the reaction products.
  • the latter aspect is an important prerequisite for promoting and accelerating rapid chemical (equilibrium) processes.
  • the cooling of the marginal areas, which are not involved in the reaction and especially the material removal are not subject, can be protected by the cooling effect of the beam from thermal stresses and resulting crystalline damage, which allows a low-damage or damage-free structuring of the solar cells.
  • the liquid jet due to its high flow speed, the liquid jet imparts a considerable mechanical impulse to the substances supplied, which is particularly effective when the jet strikes a molten substrate surface.
  • the laser beam and the liquid jet together form a new process tool that, in principle, combines the individual systems that make it up, is superior.
  • the metal-containing seed layer is preferably deposited by vapor deposition, sputtering or by reduction from aqueous solution. This is preferably done simultaneously on the front and the back of the wafer.
  • the metal-containing seed layer preferably contains a metal from the group aluminum, nickel, titanium, chromium, tungsten, silver and their alloys.
  • the seed layer After application of the seed layer, it is preferably thermally treated, e.g. by laser annealing.
  • a layer for increasing the adhesion is preferably deposited at least in regions on the front side of the wafer.
  • This adhesion enhancing layer preferably contains or consists of these metals a metal selected from the group consisting of nickel, titanium, copper, tungsten and alloys thereof.
  • metal-containing seed layer After application of the metal-containing seed layer is preferably carried out at least partially thickening of the seed layer by electrodeposition of a metallization, in particular of silver or copper, whereby a contacting of the front and the back of the wafer takes place.
  • a metallization in particular of silver or copper
  • a laminar liquid jet is used as possible for carrying out the method.
  • the laser beam can then be guided in a particularly effective manner by total reflection in the liquid jet, so that the latter function fulfilled a light guide.
  • the coupling of the laser beam can be done for example by a perpendicular to a beam direction of the liquid jet window in a nozzle unit.
  • the window can also be designed as a lens for focusing the laser beam.
  • a lens independent of the window can also be used to focus or shape the laser beam.
  • the nozzle unit can be designed so that the liquid is supplied from one side or from several sides in the radial direction to the jet direction.
  • Preferred laser types are:
  • solid-state lasers in particular the commercially commonly used Nd-YAG lasers of wavelength 1064 nm, 532 nm, 355 nm, 266 nm and 213 nm, diode lasers with wavelengths ⁇ 1000 nm, argon ion lasers of wavelength 514 to 458 nm and excimer lasers (wavelengths: 157 to 351 nm).
  • the quality of the microstructuring tends to increase with decreasing wavelength because increasingly the energy induced by the laser in the surface layer is increasingly concentrated on the surface, which tends to reduce the heat-affected zone and thus to reduce the crystalline damage in the surface Material, especially in phosphorous doped silicon below the passivation layer leads.
  • blue lasers and lasers in the near UV range (eg 355 nm) with pulse lengths in the femtosecond range prove to be particularly effective Nanosecond range.
  • the use of shortwave laser light offers the option of a direct generation of electron / hole pairs in silicon, which can be used for the electrochemical process in nickel deposition (photochemical activation).
  • free electrons generated in the silicon by laser light can directly contribute to the reduction of nickel on the surface.
  • This electron / hole generation can be permanently maintained by permanent illumination of the sample with defined wavelengths (in particular in the near UV with ⁇ ⁇ 355 nm) during the structuring process and sustainably promote the metal nucleation process.
  • the solar cell property can be exploited in order to separate the superconducting charge carriers via the p-n junction and thus negatively charge the n-conducting surface.
  • a further preferred variant of the method according to the invention provides that the laser beam is actively set in temporal and / or spatial pulse shape. These include the flattop shape, an M-profile or a rectangular pulse.
  • a solar cell is also provided which can be produced by the method described above.
  • FIG. 1 shows an embodiment of the solar cell according to the invention.
  • the solar cell 1 according to the invention in FIG. 1 has an Si-based wafer 2, which is coated on the rear side with a flat, all-surface emitter 3. On the emitter layer, a passivation layer 4 is arranged. In defined areas here is an electric field on the back 5
  • a flat, all-surface emitter 7 and a passivation layer 8 is arranged on the front side of the wafer 2.
  • a highly doped emitter (n + ) 9 and front-side contacts 10 are arranged at defined locations.
  • a sawn p-type wafer is initially subjected to a damage etch to remove the Drahtsäge antibiotics, said loss ratios in 40% KOH is carried out at 80 C for 20 minutes 0th It follows a one-sided texturing of the wafer in 1% KOH at 98 0 C (duration about 35 minutes).
  • a light emitter diffusion takes place in the tube furnace with phosphoryl chloride (POCl 3 ) as a phosphorus source.
  • the sheet resistance of the emitter is in a range of 100 to 400 ohms / sq.
  • a thin thermal oxide layer in the tube furnace is produced by overflowing with steam.
  • the thickness of the oxide layer is in a range of 6 to 15 nm.
  • a PECVD deposition of silicon nitride (refractive index n 2.0 to 2.1, thickness of the layer: about 60 nm) on the front side and a silicon dioxide layer (thickness: about 200 nm) on the back side.
  • the wafer treated in this way is subsequently structured with the liquid jet.
  • a cutting and simultaneous doping of the trench walls takes place with the aid of a laser, which is coupled into a liquid jet (so-called laser chemical processing, LCP).
  • the blasting medium is 85% phosphoric acid.
  • the line width of the structures is about 30 ⁇ m and the distance between 2 lines is 1 to 2 mm.
  • the driving speed is 400 mm / s.
  • the thus structured and doped wafer is then subjected to an electroless deposition of nickel by means of the LCP process.
  • Laser parameters and driving speed are identical to the previous method step. This is followed by the formation of a local back-surface field (BSF) using LCP, for which boric acid is used
  • the line width is about 30 microns and the distance between the lines 200 microns to 2 mm.
  • laser parameters and speed are identical to the previous two steps.
  • vapor deposition of aluminum on the back is followed by vapor deposition of aluminum on the back (thickness: about 50 nm) and subsequent vapor deposition of the contact metal on the back (eg titanium, thickness: about 30 nm).
  • the front and rear contacts are sintered at temperatures of 300 to 500 ° C. in a forming gas atmosphere (N 2 H 2 ).
  • N 2 H 2 forming gas atmosphere

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

L'invention concerne un procédé de fabrication de cellules solaires à contacts en faces avant et arrière, qui repose sur une microstructuration d'une tranche pourvue d'une couche diélectrique et sur un dopage des zones microstructurées. Le procédé consiste ensuite à déposer une couche germe contenant un métal et à renforcer les contacts par galvanisation. L'invention concerne également des cellules solaires pouvant être fabriquées par ledit procédé.
EP10706508A 2009-03-02 2010-02-15 Cellules solaires à contacts en faces avant et arrière et leur procédé de fabrication Withdrawn EP2404324A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009011306A DE102009011306A1 (de) 2009-03-02 2009-03-02 Beidseitig kontaktierte Solarzellen sowie Verfahren zu deren Herstellung
PCT/EP2010/000921 WO2010099863A2 (fr) 2009-03-02 2010-02-15 Cellules solaires à contacts en faces avant et arrière et leur procédé de fabrication

Publications (1)

Publication Number Publication Date
EP2404324A2 true EP2404324A2 (fr) 2012-01-11

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EP10706508A Withdrawn EP2404324A2 (fr) 2009-03-02 2010-02-15 Cellules solaires à contacts en faces avant et arrière et leur procédé de fabrication

Country Status (6)

Country Link
US (1) US20120055541A1 (fr)
EP (1) EP2404324A2 (fr)
KR (1) KR20110122214A (fr)
CN (1) CN102379043A (fr)
DE (1) DE102009011306A1 (fr)
WO (1) WO2010099863A2 (fr)

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KR20120140026A (ko) * 2011-06-20 2012-12-28 엘지전자 주식회사 태양전지
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US20120055541A1 (en) 2012-03-08
CN102379043A (zh) 2012-03-14
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KR20110122214A (ko) 2011-11-09
DE102009011306A1 (de) 2010-09-16

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