EP2323142B1 - Vorrichtung zur Veränderung eines Merkmals eines elektrischen Signals - Google Patents
Vorrichtung zur Veränderung eines Merkmals eines elektrischen Signals Download PDFInfo
- Publication number
- EP2323142B1 EP2323142B1 EP10191254.1A EP10191254A EP2323142B1 EP 2323142 B1 EP2323142 B1 EP 2323142B1 EP 10191254 A EP10191254 A EP 10191254A EP 2323142 B1 EP2323142 B1 EP 2323142B1
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- EP
- European Patent Office
- Prior art keywords
- magnetic element
- conductive strip
- central part
- central
- branch
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- 230000005291 magnetic effect Effects 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 230000035699 permeability Effects 0.000 claims description 12
- 230000005415 magnetization Effects 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 5
- YFXPPSKYMBTNAV-UHFFFAOYSA-N bensultap Chemical compound C=1C=CC=CC=1S(=O)(=O)SCC(N(C)C)CSS(=O)(=O)C1=CC=CC=C1 YFXPPSKYMBTNAV-UHFFFAOYSA-N 0.000 description 24
- 230000004044 response Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 238000004873 anchoring Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/02—Variable inductances or transformers of the signal type continuously variable, e.g. variometers
- H01F21/08—Variable inductances or transformers of the signal type continuously variable, e.g. variometers by varying the permeability of the core, e.g. by varying magnetic bias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the invention relates to a variable-response magnetic radiofrequency device integrated on a substrate.
- radio frequency here is meant usual frequencies between 1 MHz and 5 GHz.
- These devices are made using the same collective manufacturing processes as those used to make microelectronic chips.
- these devices are made from monocrystalline silicon or glass wafers on which metal and dielectric materials are deposited which are structured by lithography and etching.
- the devices in question here are variable devices continuously called “analog” as opposed to variable devices by discrete switching elements, called “digital”.
- the continuous variation is ensured by the continuous variation of the magnetic permeability of a magnetic element.
- Magnetic RF devices with variable response have many applications. They make it possible to modify a characteristic of an electrical signal which passes through the device as a function of the permeability of the magnetic element. They can therefore be called "device for modifying a characteristic of an electrical signal". For example, they can be used as variable inductance, phase shifter, impedance transformer, delay line. .
- the electrical signal whose characteristic is modified, is conveyed by the conductive strip.
- the patent application FR 2 905 793 discloses such a device.
- the demand FR 2 905 793 describes a variable inductance with a high value inductance (i.e. greater than 1 nH) and low resistivity (i.e. less than 1 ohm).
- the conductive ribbon is mechanically independent of the magnetic element.
- the conductive ribbon is spaced from the magnetic element by an empty cavity or filled with a soft material. More specifically, the conductive strip is either wound around the magnetic element or only disposed under the magnetic element and the central branch.
- the invention therefore aims to solve at least one of these problems.
- making the central portion of the conductive ribbon integral with the magnetic element may increase its stiffness and tend to limit variations in its permeability.
- this is largely compensated by the improved electromagnetic coupling between the ribbon and the magnetic element.
- This improvement is caused by the proximity of the central part of the ribbon with the magnetic element. Indeed, the central branch is no longer interposed between the magnetic element and the conductive strip.
- the above device makes it possible to increase the amplitude of the inductance variations while being simply feasible.
- the Figures 1 to 3 represent a variable-response magnetic radiofrequency device 2 integrated on a substrate 12.
- the device 2 extends essentially in a horizontal plane marked by orthogonal directions X and Y. The vertical is indicated by a direction Z.
- the device 2 comprises a beam 7 of piezoelectric material intended to generate mechanical stresses in a magnetic element 8 ( figure 2 ).
- the beam 7 has the shape of a tensile test piece and comprises, along a longitudinal axis of reference A1 ( figure 3 ), parallel to the direction Y, two transverse portions 9 of width W1 and a central branch 10 of width W2.
- the width W2 is smaller than the width W1.
- the width W2 is at least two times smaller than the width W1.
- the beam 7 is anchored in the substrate 12 on which the device 2 is formed. More specifically, the beam 7 is anchored to the substrate 12 at the level of mechanical anchoring zones 16 situated at the ends of the transverse portions 9. The beam 7 is thus free of movement vis-à-vis the substrate 12 out of these anchoring zones 16 to allow a maximum amplitude of deformation of the central branch 10.
- the anchoring zones 16, of length L1 and width W1 ( Figure 3 ), define the end of the transverse zones 9 opposite to the central branch 10. These anchoring zones provide a strong mechanical connection without any degree of freedom with the substrate 12.
- the branch 10 has a length L4 in the Y direction. This central branch 10 corresponds to the zone of the beam 7 directly in contact with a lower face of the magnetic element 8.
- the profile of the beam 7 is chosen and optimized to generate uniaxial and homogeneous stresses in the magnetic element 8.
- uniaxial stresses is meant that the stresses are exerted essentially and almost solely in the Y direction whereas no stress or almost no stress is exerted in the central branch along the X direction.
- the stresses in the Y direction are ten or a hundred times greater than the X-directional stresses. .
- transverse portions 9 also comprise an area 17 of length L2 and width W1 which provides the bulk of the generation of stresses in the central branch 10.
- Each transverse portion 9 is extended by an optional transition zone 18 of length L3 and of variable width.
- the transition zone 18 extends from the zone 17 to the branch 10.
- the transition zone 18 has an elliptical profile advantageously tangential to the zone 17 and to the branch 10.
- transition zones 18, with an elliptical profile make it possible in particular to concentrate and distribute the stresses in a homogeneous manner while ensuring maximum compactness to the device 2.
- Such a beam 7 embedded only at its ends allows in particular to apply stronger constraints and better control these constraints.
- the device 2 comprises lower actuating electrodes 11a and 11b higher ( figure 2 ) These electrodes 11a and 11b cooperate with the beam 7 to generate the actuation voltage necessary for the application of the mechanical stresses in the magnetic element 8. According to the voltage applied between the electrodes 11a and 11b, namely positive or negative, compressive or tensile stresses are generated in the magnetic element 8. Here, the electrodes 11a are connected to ground.
- the electrodes 11a and 11b extend over most of the surface of the transverse portions 9, respectively, below and above them. However, preferably, the electrodes 11a and 11b do not extend at the level of the transition zones 18.
- the magnetic element 8 is directly deposited on the branch 10 of the beam 7. It is fixed without any degree of freedom to this branch 10 and in direct contact therewith. In particular, no conductive strip or conductive electrode is interposed between the magnetic element 8 and the branch 10.
- the magnetic element 8 is made of a magnetic material having a permeability that varies according to the stresses applied to it.
- the magnetic material used is uniaxial.
- it is composed of an alloy based on iron and / or cobalt and / or nickel.
- the magnetic element 8 may be deposited in a magnetic field to promote the anisotropy of the material.
- the magnetic element has a direction of easier magnetization substantially parallel or perpendicular to the longitudinal axis A1. More specifically, in this embodiment, the direction of easier magnetization is perpendicular to the axis A1.
- the magnetic element 8 is a parallelepiped whose largest faces are horizontal.
- the width of the magnetic element in the X direction is for example between 100 and 500 microns.
- the length of the magnetic element in the Y direction is for example also between 100 and 500 microns.
- the device 2 also comprises a conductive strip 20 ( Figure 1 ) which extends mainly parallel to the direction of easier magnetization of the magnetic element 8.
- the conductive strip 20 therefore extends perpendicularly to the axis A1 in a plane above the element
- This ribbon 20 conveys the electrical signal which passes through the device 2.
- the ends 24 and 25 are mechanically and electrically connected to the central portion 22 via bridges 26, 27 suspended above a cavity 30.
- the cavity 30 is the same as that which mechanically isolates the branch 10 of the substrate 12.
- the central portion 22 is deposited on the magnetic element 8. More specifically, here, the central portion 22 is directly deposited on a layer 32 of electrical insulation itself directly deposited on an upper face of the magnetic element 8. This Layer 32 is optional, especially for low frequencies (i.e. for frequencies below 100MHz typically). The thickness of this layer 32 in the Z direction is less than 1 ⁇ m and preferably less than 0.1 ⁇ m so as to minimize the distance that separates the central portion 22 from the magnetic element 8.
- the ends 24 and 25 are either directly deposited on the substrate 12, or directly deposited, as shown here, on a layer 34 of electrically insulating material itself directly deposited on the substrate 12. This layer 34 is provided to bring the same plane the ends 24, 25, the central portion 22 and mass elements which are described later.
- the central portion 22 and the ends 24 and 25 have a width L ( figure 1 constant) in the direction Y.
- the bridges 26 and 27 have a width L 'strictly less than the width L so as not to bind too rigidly the central portion 22 at the ends 24 and 25 of the conductive strip.
- the width L is between 10 and 100 microns.
- the total length of the conductive strip 20 between these two ends is for example between 750 and 1150 microns.
- the ribbon 20 is made of a conductive material of low stiffness so as not to limit too much the deformations of the magnetic element 8.
- the material chosen has a Young's modulus of less than 100 GPa.
- the thickness of the conductive ribbon is chosen to be less than 1 ⁇ m and preferably less than 0.5 ⁇ m.
- the conductor ribbon material is typically a metal such as gold, silver or aluminum.
- the device 2 also comprises mass elements which extend parallel to the ribbon 20 so as to allow the propagation of radio frequency waves through this device with a suitable impedance.
- the device 2 comprises two ground strips 36 and 38 which extend along the ribbon 20 in the same plane as this ribbon. These ribbons 36 and 38 are fixed without no degree of freedom to the substrate 12.
- the ribbons 36 and 38 are directly deposited on the insulating layer 34.
- These ribbons 36 and 38 are shaped so as to adapt the impedance of the fixed portions of the ribbon 20, c that is to say ends 24 and 25.
- the tapes 36 and 38 are electrically insulated from the ends 24 and 25 by slots 40, 41 of constant thickness e.
- the thickness e and width L of the ends 24, 25 are chosen to match the impedance of the fixed portions of the ribbon 20 to a predetermined value such as 50 ohms.
- the thickness e is for example between 10 and 100 microns.
- the ground elements also include a lower ground plane 44 whose function is to adapt the impedance of the central portion 22 of the ribbon 7.
- This ground plane is located below the central portion 22 and more precisely below the branch 10.
- the ground plane 44 is here deposited on the bottom of the cavity 30.
- the ground plane 40 is spaced from a lower face of the central portion 22 by a constant height h ( figure 2 ). This height h is chosen to adapt the impedance of the central portion 22 to the same value as that chosen for the ends 24 and 25. This value is here equal to 50 Ohms.
- the adaptation of the impedance of the central portion 22 consists in maintaining the impedance of this central portion 22 around 50 ohms.
- the adaptation is carried out in such a way that the impedance of the central part 22, during the operation of the device 2, is systematically equal to 50 ohms within ⁇ 50%.
- the height h is chosen so that the impedance of the central portion is between 30 and 70 Ohms regardless of the permeability variation of the magnetic element 8.
- the height h is between 5 and 50 ⁇ m.
- ground plane 44 extends under the zones 17 of the transverse portions 9 so as to also form the actuating electrodes 11a.
- a voltage difference is applied to the actuating electrodes 11a and 11b which puts the magnetic element 8 under stress.
- the magnetic element 8 deforms elastically, which makes its permeability vary.
- This variation of the permeability modifies at least one characteristic of the electrical signal which passes through the device 2 along the ribbon 20.
- the variation in the permeability of the magnetic element 8 affects the propagation equations of the electrical signal.
- the figure 4 represents a device 50 similar to the device 2 except that the strip 20 is replaced by a conductive strip 52 which extends parallel to the longitudinal axis of the beam 7. Therefore, this strip 52 extends over the transverse portions 9 of the beam 7.
- the strip 52 has two ends 58 directly deposited on the transverse portions 9 and a central portion 60 directly deposited on the branch 10 and the magnetic element 8.
- the layer insulating 32 is omitted. Indeed, this insulating layer 32 may be omitted if the resistivity of the ribbon 52 is much lower than that of the magnetic element 8. For example, the resistivity of the ribbon 52 is less than 1000 ⁇ / cm.
- the magnetic element 8 is rotated so that its direction of easier magnetization remains parallel to the direction in which the ribbon 52 extends.
- the actuating electrodes 11b are also replaced by actuating electrodes 54 and 55 disposed on each side of the ends 58 of the conductive strip 52. These electrodes 54 and 55 are arranged opposite the lower actuating electrodes 11a. .
- the lower ground plane 44 and the ground strips 36, 38 are replaced by two ground strips 62, 64 which extend parallel to the Y direction.
- strips 62 and 64 make it possible to adapt the impedance of the device 50.
- the distal ends of the strips 62 and 64 are spaced apart from the ends of the strip 52 by slots 66, 68 whose thickness e is chosen to adapt the impedance of the device 50 to a predetermined value such as 50 Ohms.
- the height between the bottom of the cavity 30 and the ribbon 52 is chosen to be less than 1 ⁇ m.
- the ribbons 62 and 64 can be considered as coplanar with the ribbon 52 over their entire length.
- the impedance of the device 50 is only adjusted by adjusting the thickness e of the slots 66, 68 and the width L of the ribbon 52.
- the figure 5 represents a device 70 identical to the device 50 except that the ground strips 62 and 64 are electrically connected to each other by a ground plane 72 located below the branch 10 of the beam 7.
- the impedance of the central portion 60 of the ribbon 52 is adjusted by varying the height h which separates this central portion of the ground plane 72.
- This height h is typically between 5 and 50 .mu.m.
- the fact that the height h varies slightly when the ribbon 52 passes over the magnetic element 8 can be neglected because the thickness of the magnetic element 8 is small.
- the thickness of the magnetic element is between 0.2 and 0.5 microns.
- FIG 6 represents a flowchart of a method of manufacturing the device 70.
- Figures 7 to 13 represent in more detail different stages of this manufacturing process. Initially, during a step 80, the substrate 12 is etched to create the cavity 30 ( figure 7 ).
- the cavity 30 is filled with a sacrificial material 86 ( figure 9 ), an organic resin or a mineral layer such as silica or a metal.
- This material 86 is intended to be removed, for example, by means of a solvent or by a fluorinated process in the case of a mineral layer.
- the beam 7 made of piezoelectric material is deposited ( Figure 10 ).
- the beam 7 extends both on the lower actuating electrodes 11a and above the material 86.
- step 90 the upper actuating electrodes 54 and 55 as well as the magnetic element 8 are directly deposited on the beam 7 ( figure 11 ).
- step 90 the upper actuating electrodes 54 and 55 are structured to leave a location for depositing conductive ribbon 52.
- the conductive strip 52 is deposited directly on the beam 7 and the magnetic element 8 ( figure 12 ).
- the figure 14 represents a conductive strip 100 that can be used in place of any one of the previously described conducting ribbons.
- This tape 100 is for example identical to the conductive tape 52 except that in its central part, it is shaped meander. More specifically, in the central portion directly deposited above the magnetic element 8, the ribbon 100 has several strands 102 juxtaposed next to each other and extending parallel to each other. These strands 102 are juxtaposed next to each other in the X direction and all extend parallel to the Y direction, that is to say, parallel to the direction of easier magnetization of the magnetic element 8. These strands are electrically connected to each other so that the mutual inductance between two consecutive strands is negative.
- This particular conformation of the central part of the conductive ribbon makes it possible to increase the range of variation of the inductance of the device. For example, it is believed that the amplitude of the inductance variation range is at least twice as great when the conductor ribbon is meandered than when the conductive ribbon is only straight.
- the figure 15 is a conductive ribbon 110 identical to the ribbon 100 except that the meander has an even number of strands.
- the meander is formed solely of two strands 112 and 114.
- the length Lsp of each strand is for example between 300 and 500 microns.
- the width of the strands 112 and 114 is between 5 and 30 microns.
- the spacing Esp between the two strands is between 50 and 150 microns.
- the use of a meander conformation above the magnetic element 8 doubles the amplitude of the range of variation of the inductance.
- An even number of strands makes it possible to have both ends of the conductive strip 110 on the same side of the beam 7, which simplifies the connection.
- the impedance matching means made using the different ground elements may be omitted if the device 2 is only used as a variable inductance. In this case, the ground tapes and the ground planes are omitted.
- the widths L, L 'and L ", respectively, of the ends 24, 25, of the bridges 26, 27 and of the central portion 22 are different, for example, in the case where the device 2 is used as a variable inductance, preferably, the width L is greater than the width L 'and the width L' is much greater than the width L ".
- the width L ' is at least two or three times greater than the width L "of the central portion 22.
- the central portion 22 has a width L", in the Y direction, of 1 to 10 ⁇ m so to maximize its contribution in the overall inductance and the ends 24 and 25 have a width L typically around 100 microns to facilitate the connection.
- the impedance of the preceding devices can be adapted to a value other than the value of 50 Ohms.
- a value other than the value of 50 Ohms For example, what has just been described can be applied to any desired characteristic impedance value such as for example 600 Ohms.
- transverse portions 9 may be equipped with an actuating electrode.
- the other transverse portion serves essentially anchor point of the beam 7 on the substrate.
- Orifices may be provided through the zones 17 and 18 of the beam 7 to facilitate the release of the sacrificial material during step 94.
- the magnetic element 8 can have different shapes. Examples of shapes are given in the patent application FR 2 905 793 .
- the magnetic element 8 may be formed of several separate magnetic blocks.
- the magnetic element 8 is replaced by a magnetic element formed of five distinct magnetic blocks, each placed respectively under the strands 102.
- the space between these magnetic blocks is then filled, for example, by a non-magnetic material, that is, having no measurable magnetization in the absence of an external magnetic field.
- Each of these magnetic blocks is oblong and extends parallel to the strand below which it is placed. This conformation of the magnetic element facilitates the control of the mutual inductance between the strands.
- the device must have at least two strands and may have three, four or more strands to form the meander.
- the device may also comprise several central branches parallel to each other as described in the patent application FR 2 905 793 .
- the cavity under the central branch may be filled with a sufficiently soft material to allow deformation of the magnetic element 8.
- the central branch and the transition zone of the beam 7 may be made of a material other than a piezoelectric material.
- the central branch is made of a material harder than the piezoelectric material used to make the transverse parts.
- the device described here is usable to realize a variable inductance, a phase shifter, an impedance transformer or a phase delay line.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Coils Or Transformers For Communication (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Claims (11)
- Vorrichtung zur Veränderung eines Merkmals eines elektrischen Signals, die auf einem Substrat integriert ist, wobei diese Vorrichtung Folgendes aufweist:- einen Träger (7), der gegenüber dem Substrat beweglich ist, der an jedem Ende ein Querteil (9), das mechanisch an dem Substrat verankert ist, und mindestens einen Mittelschenkel (10) aufweist, der die Querteile miteinander verbindet, wobei mindestens eines der Querteile aus einem piezoelektrischen Material hergestellt ist,- Betätigungselektroden (11a, 11b), die mit dem piezoelektrischen Material verbunden sind, um eine Spannung auf den Mittelschenkel auszuüben,- ein magnetisches Element (8), das direkt auf dem Mittelschenkel aufgebracht ist, ohne dass ein leitendes Band oder eine leitende Elektrode zwischen dem magnetischen Element und dem Mittelschenkel angeordnet ist, dessen Durchlässigkeit in Abhängigkeit von der Spannung variiert, und- ein leitendes Band (20; 52; 100), das an einer einzigen Seite des Trägers angeordnet ist und mit dem magnetischen Element elektromagnetisch gekoppelt ist, dadurch gekennzeichnet, dass das leitende Band (20; 52; 100) einen Mittelteil (22; 60) aufweist, der auf einer Oberseite des magnetischen Elements (8) befestigt ist, die der Unterseite dieses magnetischen Elements gegenüberliegt, die dem Mittelschenkel zugewandt ist.
- Vorrichtung nach Anspruch 1, wobei das magnetische Element (8) ein einachsiges magnetisches Material ist, dessen Achse der leichteren Magnetisierung parallel zu der Richtung ist, in die sich der Mittelteil des leitenden Bandes hauptsächlich erstreckt.
- Vorrichtung nach Anspruch 1 oder 2, wobei sich der Mittelschenkel (10) entlang einer Längsachse (A1) erstreckt und sich der Mittelteil (22) des leitenden Bandes (20) senkrecht zu dieser Längsachse erstreckt.
- Vorrichtung nach Anspruch 1 oder 2, wobei sich der Mittelschenkel (10) entlang einer Längsachse (A1) erstreckt und sich der Mittelteil (60) des leitenden Bandes (52; 100) parallel zu dieser Längsachse erstreckt.
- Vorrichtung nach einem der vorhergehenden Ansprüche, wobei die Vorrichtung ebenfalls Masseelemente (36, 38, 44; 62, 64; 72) aufweist, die sich parallel zu dem leitenden Band (20; 52) erstrecken, um die Ausbreitung eines Funkfrequenzsignals zwischen dem leitenden Band und den Masseelementen zu ermöglichen.
- Vorrichtung nach Anspruch 5, wobei das leitende Band (20) ebenfalls zwei Enden (24, 25; 58) auf beiden Seiten seines Mittelteils aufweist, die ohne einen Freiheitsgrad an dem Substrat befestigt sind, und die Masseelemente zwei Massebänder (36, 38; 62, 64) aufweisen, die sich parallel zu diesen Enden erstrecken und von diesen Enden durch Schlitze elektrisch isoliert sind, deren Abmessungen gewählt sind, um die Impedanz dieser Enden auf einem vorbestimmten Wert anzupassen.
- Vorrichtung nach Anspruch 5, wobei das leitende Band ebenfalls zwei Enden (24, 25; 58) auf beiden Seiten seines Mittelteils aufweist, die ohne einen Freiheitsgrad an dem Substrat befestigt sind und von den Masseelementen durch einen vorbestimmten Abstand beabstandet sind, um die Impedanz dieser Enden auf einem vorbestimmten Wert anzupassen, und die Masseelemente auch eine Masseebene (44; 72) aufweisen, die unter dem Mittelschenkel (10) angeordnet ist und von dem Mittelteil des leitenden Bandes (20; 52) durch eine Höhe h beabstandet ist, die gewählt ist, um die Impedanz zwischen dem Mittelteil und der Masseebene gleich dem vorbestimmten Wert ± etwa 50 % zu halten.
- Vorrichtung nach einem der vorhergehenden Ansprüche, wobei der Mittelteil (60) des leitenden Bandes (52) direkt auf der Oberseite des magnetischen Elements (8) aufgebracht ist.
- Vorrichtung nach einem der Ansprüche 1 bis 7, wobei die Vorrichtung eine elektrisch isolierende Schicht (32) aufweist, die direkt auf der Oberseite des magnetischen Elements (8) aufgebracht ist, und der Mittelteil (22) des leitenden Bandes direkt auf dieser isolierenden Schicht aufgebracht ist.
- Vorrichtung nach Anspruch 9, wobei die elektrisch isolierende Schicht (32) eine Dicke von weniger als 1 µm aufweist.
- Vorrichtung nach einem der Ansprüche 2 bis 10, wobei der Mittelteil des leitenden Bandes (100) in einem Mäander ausgebildet ist, das aus mehreren Strängen gebildet ist, die parallel zu der Achse der leichteren Magnetisierung des magnetischen Elements (8) sind und nebeneinanderliegend derart angeordnet sind, dass die gegenseitige Induktivität zwischen jedem Paar Stränge, das direkt nebeneinander liegt, negativ ist.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0958090A FR2952754B1 (fr) | 2009-11-17 | 2009-11-17 | Dispositif radiofrequence magnetique a reponse variable |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2323142A1 EP2323142A1 (de) | 2011-05-18 |
EP2323142B1 true EP2323142B1 (de) | 2017-12-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10191254.1A Active EP2323142B1 (de) | 2009-11-17 | 2010-11-15 | Vorrichtung zur Veränderung eines Merkmals eines elektrischen Signals |
Country Status (3)
Country | Link |
---|---|
US (1) | US8610428B2 (de) |
EP (1) | EP2323142B1 (de) |
FR (1) | FR2952754B1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2546984B1 (de) * | 2011-07-11 | 2020-09-09 | Rockwell Automation Technologies, Inc. | Sensor mit gleichzeitig ablaufendem autosensing des ausgabemodus und der manuellen auswahl |
US9773612B2 (en) | 2013-10-30 | 2017-09-26 | The Board Of Trustees Of The Leland Stanford Junior University | Integrated magnetic devices with multi-axial magnetic anisotropy |
FR3066854B1 (fr) * | 2017-05-29 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif magnetique integre a inductance variable et procede de realisation d'un tel dispositif |
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JPS6440427A (en) | 1987-08-07 | 1989-02-10 | Advance Co Ltd | 5-lipoxygenase action inhibitor |
JP3485280B2 (ja) * | 1995-04-17 | 2004-01-13 | 松下電器産業株式会社 | 可変インダクター |
JP3825141B2 (ja) * | 1997-07-16 | 2006-09-20 | Necトーキン株式会社 | インダクタンス素子 |
JP2000296612A (ja) * | 1999-04-15 | 2000-10-24 | Seiko Epson Corp | 電磁変換素子、その製造方法および可変インダクタ素子 |
EP1548702A1 (de) | 2003-12-24 | 2005-06-29 | Interuniversitair Microelektronica Centrum Vzw | Verfahren zur superschnellen Steuerung magnetischer Zelle sowie zugehörige Vorrichtungen |
US7393699B2 (en) * | 2006-06-12 | 2008-07-01 | Tran Bao Q | NANO-electronics |
FR2905793B1 (fr) * | 2006-09-12 | 2008-10-17 | Commissariat Energie Atomique | Dispositif magnetique integre controle piezoelectriquement |
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2009
- 2009-11-17 FR FR0958090A patent/FR2952754B1/fr active Active
-
2010
- 2010-11-15 US US12/946,199 patent/US8610428B2/en active Active
- 2010-11-15 EP EP10191254.1A patent/EP2323142B1/de active Active
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Also Published As
Publication number | Publication date |
---|---|
FR2952754A1 (fr) | 2011-05-20 |
US8610428B2 (en) | 2013-12-17 |
FR2952754B1 (fr) | 2012-01-27 |
EP2323142A1 (de) | 2011-05-18 |
US20110116194A1 (en) | 2011-05-19 |
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