EP2311078A4 - Circuit intégré à motifs et procédé de production de celui-ci - Google Patents

Circuit intégré à motifs et procédé de production de celui-ci

Info

Publication number
EP2311078A4
EP2311078A4 EP09771083A EP09771083A EP2311078A4 EP 2311078 A4 EP2311078 A4 EP 2311078A4 EP 09771083 A EP09771083 A EP 09771083A EP 09771083 A EP09771083 A EP 09771083A EP 2311078 A4 EP2311078 A4 EP 2311078A4
Authority
EP
European Patent Office
Prior art keywords
production
integrated circuit
patterned integrated
patterned
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09771083A
Other languages
German (de)
English (en)
Other versions
EP2311078A1 (fr
Inventor
Steven Grant Duvall
Pavel Khokhlov
Pavel I Lazarev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carben Semicon Ltd
Original Assignee
Carben Semicon Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carben Semicon Ltd filed Critical Carben Semicon Ltd
Publication of EP2311078A1 publication Critical patent/EP2311078A1/fr
Publication of EP2311078A4 publication Critical patent/EP2311078A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
EP09771083A 2008-06-26 2009-06-26 Circuit intégré à motifs et procédé de production de celui-ci Withdrawn EP2311078A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7607908P 2008-06-26 2008-06-26
PCT/US2009/048737 WO2009158552A1 (fr) 2008-06-26 2009-06-26 Circuit intégré à motifs et procédé de production de celui-ci

Publications (2)

Publication Number Publication Date
EP2311078A1 EP2311078A1 (fr) 2011-04-20
EP2311078A4 true EP2311078A4 (fr) 2012-11-21

Family

ID=41444962

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09771083A Withdrawn EP2311078A4 (fr) 2008-06-26 2009-06-26 Circuit intégré à motifs et procédé de production de celui-ci

Country Status (2)

Country Link
EP (1) EP2311078A4 (fr)
WO (1) WO2009158552A1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8865268B2 (en) 2009-04-28 2014-10-21 Nokia Corporation Method and apparatus
KR101758649B1 (ko) 2010-03-31 2017-07-18 삼성전자주식회사 게르마늄층을 이용한 그래핀 제조방법
SG184904A1 (en) * 2010-05-05 2012-11-29 Univ Singapore Hole doping of graphene
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
CN102569169B (zh) * 2010-12-28 2014-01-01 中芯国际集成电路制造(上海)有限公司 基于压印技术的互连方法
EP2535937B1 (fr) 2011-06-17 2015-03-11 Friedrich-Alexander-Universität Erlangen-Nürnberg Dispositif électronique
CN102364700B (zh) * 2011-10-26 2013-03-27 常州天合光能有限公司 太阳能电池rie工艺温度补偿方法
KR102081669B1 (ko) 2012-06-21 2020-02-26 모나쉬 유니버시티 절연재 내의 전도부
EP2747132B1 (fr) * 2012-12-18 2018-11-21 IMEC vzw Procédé permettant de transférer une feuille de graphène à bosses de contact métallique d'un substrat à utiliser dans un boîtier de dispositif à semi-conducteur
US9123753B2 (en) 2013-01-08 2015-09-01 Stmicroelectronics S.R.L. Nanoscale QCA-based logic gates in graphene technology
US10998405B2 (en) 2015-12-17 2021-05-04 Intel Corporation Low-defect graphene-based devices and interconnects
CN105906467B (zh) * 2016-04-27 2018-09-14 厦门大学 一种有机光电材料异三聚茚的合成方法
US10918356B2 (en) 2016-11-22 2021-02-16 General Electric Company Ultrasound transducers having electrical traces on acoustic backing structures and methods of making the same
CN113921383B (zh) * 2021-09-14 2022-06-03 浙江奥首材料科技有限公司 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液
CN114895529A (zh) * 2022-04-15 2022-08-12 北京科技大学 一种微机械剥离图案化二维材料及其制备方法和应用
WO2024145549A1 (fr) * 2022-12-30 2024-07-04 Zansors Llc Système de capteur chimique à base de graphène

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040253820A1 (en) * 2003-06-12 2004-12-16 Deheer Walt A. Patterned thin film graphite devices and method for making same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926700A (en) * 1997-05-02 1999-07-20 Advanced Micro Devices, Inc. Semiconductor fabrication having multi-level transistors and high density interconnect therebetween
CN1292496C (zh) * 2001-05-23 2006-12-27 造型逻辑有限公司 器件的图案形成
GB0622150D0 (en) * 2006-11-06 2006-12-20 Kontrakt Technology Ltd Anisotropic semiconductor film and method of production thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040253820A1 (en) * 2003-06-12 2004-12-16 Deheer Walt A. Patterned thin film graphite devices and method for making same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
F. MOLITOR ET AL: "Local gating of a graphene Hall bar by graphene side gates", PHYSICAL REVIEW B, vol. 76, no. 24, 1 December 2007 (2007-12-01), XP055034729, ISSN: 1098-0121, DOI: 10.1103/PhysRevB.76.245426 *
GU GONG ET AL: "Field effect in epitaxial graphene on a silicon carbide substrate", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 90, no. 25, 19 June 2007 (2007-06-19), pages 253507 - 253507, XP012095422, ISSN: 0003-6951, DOI: 10.1063/1.2749839 *

Also Published As

Publication number Publication date
EP2311078A1 (fr) 2011-04-20
WO2009158552A1 (fr) 2009-12-30

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