EP2269213A1 - Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm - Google Patents

Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm

Info

Publication number
EP2269213A1
EP2269213A1 EP09738149A EP09738149A EP2269213A1 EP 2269213 A1 EP2269213 A1 EP 2269213A1 EP 09738149 A EP09738149 A EP 09738149A EP 09738149 A EP09738149 A EP 09738149A EP 2269213 A1 EP2269213 A1 EP 2269213A1
Authority
EP
European Patent Office
Prior art keywords
nanofoil
encapsulation
substrate
electrical connection
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09738149A
Other languages
German (de)
French (fr)
Inventor
Jörg NAUNDORF
Hans Wulkesch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP2269213A1 publication Critical patent/EP2269213A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0006—Exothermic brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
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Definitions

  • the present invention relates to a method according to the preamble of the main claim and devices according to the independent claim.
  • [1] discloses the tenfold reduction in thermal resistance of an interface in heat sink mounting.
  • the company "Reactive Nano Technologies (RNT)” has developed a new bonding technology platform that can form a metallic bond between a chip package and a heat sink while providing a thermal resistance of an interface that is ten times smaller than current thermal interface materials (TIM).
  • the bonding process relies on the use of reactive multilayer films as local heat sources.
  • the films are a new class of nanocomposite materials wherein self-propagating exothermic reactions can be initiated at room temperature with a hot wire or laser.
  • heat generated by a chemical reaction in the film heats the solder to melt and subsequently bond the components.
  • the bonding process can be completed in air, argon or vacuum in approximately one second.
  • the resulting metallic compounds exhibit thermal conductivities two orders of magnitude larger and thermal
  • Resistors an order of magnitude smaller than current commercial thermal interface materials (TIMs). It is shown using numerical models that the thermal stress on microelectronic packages during interconnection is very limited. Finally, it is numerically shown that reactive bonding can be used to solder silicon dies directly to heat sinks without thermally damaging the die.
  • [2] discloses direct die attach with indium using room temperature soldering. A new bonding process is described which enables solvent-free, lead-free soldering at room temperature by using reactive multilayer films as a local heat source. By activating a multilayer film between solder layers on components, heat is generated by a reaction within the film. This process provides enough local heat to melt the solder and add the components. The use of this film to facilitate the attachment of silicon dies directly to thermal management components is illustrated. Results of the model system for predicting temperatures at various interfaces during bonding are presented and verified. The last section provides thermal performance data that indicates that it can deliver six to eightfold improvement in raw chip sizes from 8 x 8 mm to 17.5 x 17.5 mm.
  • the object of the invention is to reliably and reliably provide a method for producing at least one hermetically sealed, electrical connection of at least one electronic component positioned on a substrate within a encapsulation outside the encapsulation. It is the ability to function at high ambient temperatures, especially in the range above 140 0 C, and at high power losses, especially in the range up to 600 watts, and in extreme environmental conditions, such as high humidity, safely and reliably preserved, with a size of electronic component, for example in the range of 0.05 mm 2 to 150 mm 2 , is given.
  • the object is achieved by a method according to the main claim and a device according to the independent claim.
  • a method according to the main claim for hermetically sealed, electrical feedthrough / contacting, an arrangement with reactive nanofoil and solder layers produced thereon on both sides is used.
  • Nanofoil is a film with a reactive filler that reacts exothermically upon initiation. According to the present invention, an exothermic reaction can be triggered by means of the nanofoil.
  • a nanofoil in particular, a so-called under the brand name NanoFoil® the company Reactive Nanotechnologies RNT sold foil.
  • high temperatures for example, in an aluminum-nickel multilayer, in the range of 1000 0 C to 2000 0 C.
  • the electrical connections or feedthroughs are hermetically sealed and easy to integrate, since these are planar and have good thermal conductivity. Easily integrable, planar electrical feedthroughs are provided in a simple manner.
  • the electrical feedthroughs have good heat conduction and heat spread.
  • activating an exothermic reaction of the nanofoil outside of the encapsulation for contacting the electrical connection takes place at least one electrical contact. That is, the nanofoil is used in addition to encapsulating as well as contacting the electrical connection.
  • activation of a single exothermic reaction of the nanofoil takes place for simultaneously closing the output and contacting the electrical connection to at least one electrical contact. That is, closing the output and contacting the electrical connection is provided by activating a single common exothermic reaction of the nanofoil.
  • an activation of an exothermic reaction of the nanofoil takes place by means of a laser beam. Due to the locally limited heating, a reduction of thermally induced stresses results. The activation of the exothermic reaction is therefore indicated by laser.
  • the laser is a carbon dioxide and / or diode laser.
  • a reactive nanofoil with a targeted, exothermic reaction by laser is used to produce hermetically sealed electrical feedthroughs.
  • the fixing of the nanofoil on the substrate by means of an adhesive.
  • contacting of the electronic component on the nanofoil takes place by means of a conductive adhesive.
  • the encapsulation is produced by means of glass and / or ceramic.
  • at least one electrical via is produced by the substrate from the nanofoil to at least one metallization on the side of the substrate facing away from the nanofoil.
  • the through-connection is produced by means of multilayer high-temperature co-fired ceramics (HTCC;
  • FIG. 1 shows an embodiment of a device according to the invention with hermetically sealed, electrical feedthroughs by means of exothermic nanofoil in a schematic representation.
  • FIG. 2 shows a representation of the temperature profile in the joining zone
  • FIG. 3 shows the steps of an embodiment of a method according to the invention.
  • Fig. 1 shows an embodiment of a device according to the invention.
  • Reference numeral 1 denotes an electrical connection, which can also be referred to as through-connection.
  • This is provided with a reactive nanofoil 2 comprising, for example, aluminum and nickel.
  • the nanofoil 2 is coated on both sides with a respective solder layer, which has, for example, AgSn.
  • Reference numeral 3 denotes a substrate.
  • Reference numeral 5 denotes an encapsulation or a housing cover, which comprises, for example, ceramic and / or glass.
  • an electronic component 7 is fixed.
  • the coated nanofoil 2 is structured on applied to the substrate 3.
  • the electronic component 7 is contacted on the structured nanofoil 2.
  • Reference numeral 11 designates a laser beam for initiating an exothermic reaction of the reactive nanofoil 2.
  • FIG. 1 also shows an electrical through-connection 13 through the substrate 3 from the nanofoil to at least one metallization 15 on the side of the nanofoil 2 facing away from the nanofoil 2 Substrate 3.
  • Fig. 2 shows a temperature profile in the joining zone. Such a temperature profile in the joining zone can be calculated by means of numerical models and is adapted via the dimensioning of the nanofoil 2 and the solder layer thickness. 2 shows the calculation of the transient temperature profile using the example of a copper / aluminum combination.
  • FIG. 2 is from [1]
  • step S1 shows the steps of an exemplary embodiment of a method according to the invention for producing at least one hermetically sealed, electrical connection 1 of at least one electronic component 7 positioned on a substrate 3 within an encapsulation 5 outside the encapsulation 5.
  • fixing takes place At least one structured reactive nanofoil 2 coated on both sides with one respective solder layer on the substrate 3.
  • the electronic component 7 is contacted on the side of the nanofoil 2 facing away from the substrate 3 by a step S2.
  • a step S3 ensues

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Abstract

The present invention relates to a method for generating at least one electrical connection (1) from at least one electronic component (7), which is positioned on a substrate (3) inside an encapsulation (5), to outside the encapsulation (5). The functional capability of the electrical connection (1) is to be provided at ambient temperatures greater than 140°C and in the event of large power losses and extreme environmental influences. The invention is characterized in that a reactive nanofilm (2), having targeted reaction, which can be triggered exothermically by laser, is used to produce hermetically sealed electrical connections (1). Using the nanofilm (2), an output of an electrical connection (1) and a contact of the electrical connection (1) to at least one further electrical contact can be provided.

Description

Beschreibungdescription
Verfahren zur Erzeugung einer hermetisch dichten, elektrischen Durchführung mittels exothermer NanofolieMethod for producing a hermetically sealed, electrical feedthrough by means of exothermic nanofoil
Die vorliegende Erfindung betrifft ein Verfahren gemäß dem Oberbegriff des Hauptanspruchs und Vorrichtungen gemäß dem Nebenanspruch .The present invention relates to a method according to the preamble of the main claim and devices according to the independent claim.
Mit der mechatronischen Integration kommt es zunehmend zurWith the mechatronic integration, it is increasingly becoming
Verwendung von Elektronik und Sensorik bei wesentlich höheren Umgebungstemperaturen/Verlustleistungen unter gleichzeitig sehr rauen Einsatzbedingungen beziehungsweise Umwelteinflüssen. Insbesondere im Bereich der Hochtemperaturelektronik werden dabei hermetisch dichte, robuste und integrierbare Verbindungen zur Außenwelt auf kleinstem Bauraum erforderlich. Bei Temperaturen oberhalb 150° C sind elektrische Durchführungen in Plastikgehäusen oft lediglich bedingt geeignet. Studien zeigen, dass es bei 180° C bereits innerhalb von 250 Stunden zu ersten Ausfällen der im Plastikgehäuse integrierten Schaltkreise kommt. Herkömmliche elektrische Metall-Glas-Durchführungen sind oft hinsichtlich der Herstellbarkeit, insbesondere hinsichtlich planarer Herstellungsverfahren und einer thermischen Anpassung, und bei der Integra- tion ins Package problematisch.Use of electronics and sensors at much higher ambient temperatures / power losses under very harsh operating conditions or environmental influences. In particular, in the field of high-temperature electronics hermetically sealed, robust and integrable connections to the outside world in the smallest space are required. At temperatures above 150 ° C electrical feedthroughs in plastic housings are often only partially suitable. Studies show that the first failures of the circuits integrated in the plastic housing occur within 180 hours at 180 ° C. Conventional electrical metal-glass feedthroughs are often problematic in terms of manufacturability, in particular with regard to planar manufacturing methods and thermal adaptation, and in the integration into the package.
Bei herkömmlichen elektrischen Durchführungen in Metallgehäusen, wie diese beispielsweise mit Kovar bereit gestellt sind (Kovar bezeichnet Legierungen die einen geringen Wärmeausdeh- nungskoeffizienten haben, typischer Weise circa 5 ppm/K, der damit geringer als der Koeffizient für Metalle ist; Zusammensetzung beispielsweise 54 % Eisen, 29 % Nickel und 17 % Kobalt, wobei andere Zusammensetzungen ebenso möglich sind) , werden Glasdurchführungen verwendet. Anschließend erfolgt der Verschluss mittels eines Deckels, der meist per Rollnaht geschweißt wird. Bei Keramikgehäusen werden in Mehrlagentechnik gesinterte Keramiken mit metallisierten Stromdurchführungen verwendet. Für die Chipmontage und die Verdrahtung durch Bon- den ist dabei ein Hohlraum vorgesehen. Der Deckel muss üblicherweise gelötet werden, insbesondere mittels Schutzgas, flussmittelfrei, wobei Gold-Oberflächen verwendet werden. Bei elektrischen Durchführungen in Plastikgehäusen kommen oft um- spritzte metallische Rahmen/Leadframes zur Verwendung. Umhüllungen aus Kunststoff sind hinsichtlich der erforderlichen Hermizität und aufgrund auftretender mechanischer Spannungen nur begrenzt für höhere Temperaturen verwendbar.In conventional electrical feedthroughs in metal housings, such as those provided with Kovar (Kovar refers to alloys that have low coefficients of thermal expansion, typically about 5 ppm / K, which is less than the coefficient for metals; composition, for example, 54% iron , 29% nickel and 17% cobalt, other compositions are also possible) glass feedthroughs are used. Subsequently, the closure takes place by means of a lid, which is usually welded by means of a roll seam. In ceramic packages, sintered ceramics with metallized current feedthroughs are used in multi-layer technology. For chip mounting and wiring through this is a cavity provided. The lid must usually be soldered, in particular by means of inert gas, flux-free, using gold surfaces. Electrical feedthroughs in plastic housings often use overmolded metallic frames / leadframes. Plastic enclosures are only limitedly usable for higher temperatures with regard to the required hermeticity and due to occurring mechanical stresses.
[1] offenbart die zehnfache Verringerung des thermischen Widerstands einer Schnittstelle beim Wärmesenkenbefestigen . Die Firma "Reaktiv Nano Technologies (RNT) " hat eine neue Verbindungstechnikplattform entwickelt, die ein metallisches Bonden zwischen einem Chipgehäuse und einer Wärmesenke ausbilden kann und dabei einen thermischen Widerstand einer Schnittstelle aufweist der zehnmal kleiner ist als der von derzeitigen thermischen Schnittstellenmaterialien (TIM) . Der Verbin- dungsprozess beruht auf der Verwendung von Reaktiven Mehrfachschichtfolien als örtliche Wärmequellen. Die Folien sind eine neue Klasse von Nanoerzeugnismaterialien wobei sich selbst ausbreitende exotherme Reaktionen bei Zimmertemperatur mit einem heißen Draht oder Laser ausgelöst werden können. Bei Einfügen einer Mehrfachschichtfolie zwischen zwei Lotschichten und einem Chipgehäuse und einer Wärmesenke, wärmt durch eine chemische Reaktion in der Folie erzeugte Wärme das Lot derart auf, dass es schmilzt und nachfolgend die Bestandteile bondet. Der Verbindungsprozess kann in Luft, Argon oder Vakuum in annähernd einer Sekunde vervollständigt werden. Die sich ergebenden metallischen Verbindungen zeigen thermische Leitfähigkeiten zwei Größenordnungen größer und thermische[1] discloses the tenfold reduction in thermal resistance of an interface in heat sink mounting. The company "Reactive Nano Technologies (RNT)" has developed a new bonding technology platform that can form a metallic bond between a chip package and a heat sink while providing a thermal resistance of an interface that is ten times smaller than current thermal interface materials (TIM). The bonding process relies on the use of reactive multilayer films as local heat sources. The films are a new class of nanocomposite materials wherein self-propagating exothermic reactions can be initiated at room temperature with a hot wire or laser. Upon insertion of a multilayer film between two solder layers and a chip package and heat sink, heat generated by a chemical reaction in the film heats the solder to melt and subsequently bond the components. The bonding process can be completed in air, argon or vacuum in approximately one second. The resulting metallic compounds exhibit thermal conductivities two orders of magnitude larger and thermal
Widerstände eine Größenordnung kleiner als derzeitige kommerzielle thermische Schnittstellenmaterialien (TIMs) . Es wird unter Verwendung von numerischen Modellen gezeigt, dass die thermische Belastung von mikroelektronischen Gehäusen während des Verbindens sehr eingeschränkt ist. Abschließend wird numerisch gezeigt das reaktives Verbinden zum Löten von Silizium Rohchips direkt an Wärmesenken verwendet werden kann ohne den Chip thermisch zu beschädigen. [2] offenbart das direkte Rohchip-Befestigen mit Indium unter Verwendung von Raumtemperaturlöten. Es wird ein neuer Verbin- dungsprozess beschrieben der fliesmittelfreies, bleifreies Löten bei Raumtemperatur mittels der Verwendung von reaktiven Mehrschichtfolien als eine örtliche Wärmequelle ermöglicht. Mittels Aktivierung einer Mehrschichtfolie zwischen Lotschichten auf Komponenten wird Wärme durch eine Reaktion innerhalb der Folie erzeugt. Dieser Prozess stellt genug örtli- che Wärme zum Schmelzen des Lots und Fügen der Komponenten bereit. Es wird die Verwendung dieser Folie zum Ermöglichen des Befestigens von Silizium Rohchips direkt an thermische Verwaltungskomponenten dargestellt. Ergebnisse des Modellsystems zur Vorhersage von Temperaturen bei verschiedenen Schnittstellen während des Verbindens sind dargestellt und verifiziert. Im letzten Abschnitt werden Daten über die thermische Leistungsfähigkeit bereitgestellt, die anzeigen dass eine sechs bis achtfache Verbesserung der Rohchipgrößen von 8 x 8 mm auf 17,5 x 17,5 mm ermöglicht wird.Resistors an order of magnitude smaller than current commercial thermal interface materials (TIMs). It is shown using numerical models that the thermal stress on microelectronic packages during interconnection is very limited. Finally, it is numerically shown that reactive bonding can be used to solder silicon dies directly to heat sinks without thermally damaging the die. [2] discloses direct die attach with indium using room temperature soldering. A new bonding process is described which enables solvent-free, lead-free soldering at room temperature by using reactive multilayer films as a local heat source. By activating a multilayer film between solder layers on components, heat is generated by a reaction within the film. This process provides enough local heat to melt the solder and add the components. The use of this film to facilitate the attachment of silicon dies directly to thermal management components is illustrated. Results of the model system for predicting temperatures at various interfaces during bonding are presented and verified. The last section provides thermal performance data that indicates that it can deliver six to eightfold improvement in raw chip sizes from 8 x 8 mm to 17.5 x 17.5 mm.
Es ist Aufgabe der Erfindung ein Verfahren zur Erzeugung mindestens einer hermetisch dichten, elektrischen Verbindung von mindestens einem auf einem Substrat, innerhalb einer Verkap- selung positionierten, elektronischen Bauelement nach außer- halb der Verkapselung sicher und zuverlässig bereitzustellen. Es soll die Funktionsfähigkeit bei hohen Umgebungstemperaturen, insbesondere im Bereich größer 1400C, sowie bei großen Verlustleistungen, insbesondere im Bereich bis 600 Watt, und bei extremen Umwelteinflüssen, wie es beispielsweise hohe Luftfeuchtigkeit ist, sicher und zuverlässig erhalten bleiben, wobei eine Größe eines elektronischen Bauelements, beispielsweise im Bereich von 0,05 mm2 bis 150 mm2, gegeben ist.The object of the invention is to reliably and reliably provide a method for producing at least one hermetically sealed, electrical connection of at least one electronic component positioned on a substrate within a encapsulation outside the encapsulation. It is the ability to function at high ambient temperatures, especially in the range above 140 0 C, and at high power losses, especially in the range up to 600 watts, and in extreme environmental conditions, such as high humidity, safely and reliably preserved, with a size of electronic component, for example in the range of 0.05 mm 2 to 150 mm 2 , is given.
Die Aufgabe wird durch ein Verfahren gemäß dem Hauptanspruch und eine Vorrichtung gemäß dem Nebenanspruch gelöst. Zur hermetisch dichten, elektrischen Durchführung/Kontak- tierung wird eine Anordnung mit reaktiver Nanofolie und darauf beidseitig erzeugter Lotschichten verwendet.The object is achieved by a method according to the main claim and a device according to the independent claim. For hermetically sealed, electrical feedthrough / contacting, an arrangement with reactive nanofoil and solder layers produced thereon on both sides is used.
Nanofolie ist eine Folie mit einem reaktiven Füllstoff, der bei einer Initiierung exotherm reagiert. Gemäß der vorliegenden Erfindung kann mittels der Nanofolie eine exotherme Reaktion ausgelöst werden. Als Nanofolie eignet sich insbesondere eine sogenannte unter dem Markennamen NanoFoil® der Firma Reactive Nanotechnologies RNT vertriebene Folie. Bei der exothermen Reaktion entstehen hohe Temperaturen, beispielsweise bei einer Aluminium-Nickel-Multilayer, im Bereich von 10000C bis 20000C.Nanofoil is a film with a reactive filler that reacts exothermically upon initiation. According to the present invention, an exothermic reaction can be triggered by means of the nanofoil. As a nanofoil, in particular, a so-called under the brand name NanoFoil® the company Reactive Nanotechnologies RNT sold foil. In the exothermic reaction, high temperatures, for example, in an aluminum-nickel multilayer, in the range of 1000 0 C to 2000 0 C.
Die elektrischen Verbindungen beziehungsweise Durchführungen sind hermetisch dicht und leicht integrierbar, da diese pla- nar und gut wärmeleitend sind. Es werden auf einfache Weise leicht integrierbare, planare elektrische Durchkontaktierun- gen bereit gestellt. Die elektrischen Durchführungen weisen eine gute Wärmeleitung sowie Wärmespreizung auf.The electrical connections or feedthroughs are hermetically sealed and easy to integrate, since these are planar and have good thermal conductivity. Easily integrable, planar electrical feedthroughs are provided in a simple manner. The electrical feedthroughs have good heat conduction and heat spread.
Durch die lokal begrenzte Erwärmung beim Löten mit reaktiver Nanofolie kommt es zu einer Reduzierung thermisch induzierter mechanischer Spannungen bei gleichzeitig deutlich geringerer Temperaturbelastung der Bauelemente.Due to the locally limited heating during soldering with reactive nanofoil, a reduction of thermally induced mechanical stresses occurs at the same time as significantly lower thermal stress on the components.
Weitere vorteilhafte Ausgestaltungen werden in Verbindung mit den Unteransprüchen beansprucht.Further advantageous embodiments are claimed in conjunction with the subclaims.
Gemäß einer vorteilhaften Ausgestaltung erfolgt ein Aktivieren einer exothermen Reaktion der Nanofolie außerhalb der Verkapselung zum Kontaktieren der elektrischen Verbindung an mindestens einem elektrischen Kontakt. Das heißt die Nanofolie wird zusätzlich zum Verkapseln ebenso zum Kontaktieren der elektrischen Verbindung verwendet.According to an advantageous embodiment, activating an exothermic reaction of the nanofoil outside of the encapsulation for contacting the electrical connection takes place at least one electrical contact. That is, the nanofoil is used in addition to encapsulating as well as contacting the electrical connection.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt ein Aktivieren einer einzigen exothermen Reaktion der Nanofolie zum gleichzeitigen Verschließen des Ausgangs und Kontaktieren der elektrischen Verbindung an mindestens einen elektrischen Kontakt. Das heißt das Verschließen des Ausganges und das Kontaktieren der elektrischen Verbindung wird durch das Akti- vieren einer einzigen gemeinsamen exothermen Reaktion der Na- nofolie bereitgestellt. Es ergibt sich der Vorteil, dass die elektrische Durchführung mit hermetischem Verschluss und gleichzeitig eine elektrische Kontaktierung der elektronischen Bauelemente beziehungsweise Chips bereitgestellt werden kann. Durch diese Auslegung kann der Verschluss beziehungsweise die Verkapselung der elektrischen Durchführung und/oder die Kontaktierung der Bauelemente beziehungsweise der Chips in einem Vorgang erfolgen, das heißt, dass beispielsweise ein Drahtbonden entfallen kann.According to a further advantageous embodiment, activation of a single exothermic reaction of the nanofoil takes place for simultaneously closing the output and contacting the electrical connection to at least one electrical contact. That is, closing the output and contacting the electrical connection is provided by activating a single common exothermic reaction of the nanofoil. This results in the advantage that the electrical feedthrough can be provided with a hermetic closure and, at the same time, an electrical contacting of the electronic components or chips. By this design, the closure or the encapsulation of the electrical feedthrough and / or the contacting of the components or the chips can take place in one process, that is, for example, a wire bonding can be omitted.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt ein Aktivieren einer exothermen Reaktion der Nanofolie mittels eines Laserstrahls. Aufgrund der lokal begrenzten Erwärmung ergibt sich eine Reduzierung thermisch induzierter Spannun- gen. Die Aktivierung der exothermen Reaktion wird also per Laser indiziert.According to a further advantageous embodiment, an activation of an exothermic reaction of the nanofoil takes place by means of a laser beam. Due to the locally limited heating, a reduction of thermally induced stresses results. The activation of the exothermic reaction is therefore indicated by laser.
Gemäß einer weiteren vorteilhaften Ausgestaltung ist der Laser ein Kohlendioxid- und/oder Diodenlaser. Es wird eine re- aktive Nanofolie mit gezielter, exotherm auslösbarer Reaktion per Laser zur Herstellung hermetisch dichter, elektrischer Durchführungen verwendet.According to a further advantageous embodiment, the laser is a carbon dioxide and / or diode laser. A reactive nanofoil with a targeted, exothermic reaction by laser is used to produce hermetically sealed electrical feedthroughs.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt das Fixieren der Nanofolie auf dem Substrat mittels eines Klebers .According to a further advantageous embodiment, the fixing of the nanofoil on the substrate by means of an adhesive.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt ein Ankontaktieren des elektronischen Bauelements auf der Nanofo- lie mittels eines Leitklebers.According to a further advantageous embodiment, contacting of the electronic component on the nanofoil takes place by means of a conductive adhesive.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt ein Erzeugen der Verkapselung mittels Glas und/oder Keramik. Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt ein Erzeugen mindestens einer elektrischen Durchkontaktierung durch das Substrat von der Nanofolie zu mindestens einer Me- tallisierung auf der der Nanofolie abgewandten Seite des Substrats .According to a further advantageous embodiment, the encapsulation is produced by means of glass and / or ceramic. According to a further advantageous refinement, at least one electrical via is produced by the substrate from the nanofoil to at least one metallization on the side of the substrate facing away from the nanofoil.
Gemäß einer weiteren vorteilhaften Ausgestaltung erfolgt das Erzeugen der Durchkontaktierung mittels mehrlagiger High Tem- perature Cofired Ceramics (HTCC; Hochtemperaturmehrlagenkera- miken) .According to a further advantageous embodiment, the through-connection is produced by means of multilayer high-temperature co-fired ceramics (HTCC;
Die Erfindung wird anhand eines Ausführungsbeispiels in Verbindung mit den Figuren näher beschrieben ist. Es zeigen:The invention will be described in more detail with reference to an embodiment in conjunction with the figures. Show it:
Fig. 1 ein Ausführungsbeispiel einer erfindungsgemäß erzeugten Vorrichtung mit hermetisch dichter, elektrischer Durchführungen mittels exothermer Nanofolie in schematischer Darstellung;1 shows an embodiment of a device according to the invention with hermetically sealed, electrical feedthroughs by means of exothermic nanofoil in a schematic representation.
Fig. 2 eine Darstellung des Temperaturprofils in der Fügezone;FIG. 2 shows a representation of the temperature profile in the joining zone; FIG.
Fig. 3 die Schritte eines Ausführungsbeispiels eines er- findungsgemäßen Verfahrens.3 shows the steps of an embodiment of a method according to the invention.
Fig. 1 zeigt ein Ausführungsbeispiel einer erfindungsgemäß erzeugten Vorrichtung. Bezugszeichen 1 bezeichnet eine elektrische Verbindung, die ebenso als Durchkontaktierung bezeich- net werden kann. Diese ist mit einer reaktiven Nanofolie 2 bereitgestellt, die beispielsweise Aluminium und Nickel aufweist. Die Nanofolie 2 ist auf beiden Seiten mit jeweils einer Lotschicht beschichtet, die beispielsweise AgSn aufweist. Bezugszeichen 3 bezeichnet ein Substrat. Bezugszeichen 5 be- zeichnet eine Verkapselung beziehungsweise einen Gehäusedeckel, der beispielsweise Keramik und/oder Glas aufweist. Innerhalb der Verkapselung 5 ist ein elektronisches Bauelement 7 fixiert. Die beschichtete Nanofolie 2 ist strukturiert auf dem Substrat 3 aufgebracht. Das elektronische Bauelement 7 ist auf der strukturierten Nanofolie 2 ankontaktiert . Derartige Ankontaktierungen bezeichnet Bezugszeichen 9. Bezugszeichen 11 bezeichnet einen Laserstrahl zur Initiierung einer exothermen Reaktion der reaktiven Nanofolie 2. Fig. 1 zeigt ebenso eine elektrische Durchkontaktierung 13 durch das Substrat 3 von der Nanofolie zu mindestens einer Metallisierung 15 auf der der Nanofolie 2 abgewandten Seite des Substrats 3.Fig. 1 shows an embodiment of a device according to the invention. Reference numeral 1 denotes an electrical connection, which can also be referred to as through-connection. This is provided with a reactive nanofoil 2 comprising, for example, aluminum and nickel. The nanofoil 2 is coated on both sides with a respective solder layer, which has, for example, AgSn. Reference numeral 3 denotes a substrate. Reference numeral 5 denotes an encapsulation or a housing cover, which comprises, for example, ceramic and / or glass. Within the encapsulation 5, an electronic component 7 is fixed. The coated nanofoil 2 is structured on applied to the substrate 3. The electronic component 7 is contacted on the structured nanofoil 2. Reference numeral 11 designates a laser beam for initiating an exothermic reaction of the reactive nanofoil 2. FIG. 1 also shows an electrical through-connection 13 through the substrate 3 from the nanofoil to at least one metallization 15 on the side of the nanofoil 2 facing away from the nanofoil 2 Substrate 3.
Fig. 2 zeigt ein Temperaturprofil in der Fügezone. Ein derartiges Temperaturprofil in der Fügezone lässt sich mittels numerischer Modelle berechnen und wird über die Dimensionierung der Nanofolie 2 und Lotschichtdicke angepasst. Fig. 2 zeigt die Berechnung des transienten Temperaturverlaufs am Beispiel einer Kupfer/Aluminiumkombination. Die Fig. 2 ist aus [1]Fig. 2 shows a temperature profile in the joining zone. Such a temperature profile in the joining zone can be calculated by means of numerical models and is adapted via the dimensioning of the nanofoil 2 and the solder layer thickness. 2 shows the calculation of the transient temperature profile using the example of a copper / aluminum combination. FIG. 2 is from [1]
Seite 5a entnommen. Es kommt zu einem sehr schnellen Tempera- turanstieg/-abfall von kleiner 1 Millisekunde bei entsprechend lokal begrenzte Erhitzung der Fügezone.Taken from page 5a. There is a very rapid temperature increase / decrease of less than 1 millisecond with correspondingly locally limited heating of the joining zone.
Fig. 3 zeigt die Schritte eines Ausführungsbeispiels eines erfindungsgemäßen Verfahrens zur Erzeugung mindestens einer hermetisch dichten, elektrischen Verbindung 1 von mindestens einem auf einem Substrat 3, innerhalb einer Verkapselung 5 positionierten elektronischen Bauelement 7 nach außerhalb der Verkapselung 5. Gemäß einem Schritt Sl erfolgt ein Fixieren mindestens einer strukturierten, beidseitig mit jeweils einer Lotschicht beschichteten reaktiven Nanofolie 2 auf dem Substrat 3. Mit einem Schritt S2 erfolgt ein Ankontaktieren des elektronischen Bauelements 7 auf der dem Substrat 3 abgewand- ten Seite der Nanofolie 2. Mit einem Schritt S3 erfolgt ein3 shows the steps of an exemplary embodiment of a method according to the invention for producing at least one hermetically sealed, electrical connection 1 of at least one electronic component 7 positioned on a substrate 3 within an encapsulation 5 outside the encapsulation 5. According to a step S1, fixing takes place At least one structured reactive nanofoil 2 coated on both sides with one respective solder layer on the substrate 3. The electronic component 7 is contacted on the side of the nanofoil 2 facing away from the substrate 3 by a step S2. A step S3 ensues
Erzeugen der Verkapselung 5 des elektronischen Bauelements 7, auf dem Substrat 3 und/oder auf der Nanofolie 2. Mit einem Schritt S4 erfolgt ein Aktivieren einer exothermen Reaktion der Nanofolie 2 außerhalb der Verkapselung 5 zum Verschließen des Ausgangs der elektrischen Verbindung 1. Literaturverzeichnis :Generating the encapsulation 5 of the electronic component 7, on the substrate 3 and / or on the nanofoil 2. With a step S4 activating an exothermic reaction of the nanofoil 2 outside of the encapsulation 5 to close the output of the electrical connection. 1 Bibliography :
[1] „A Tenfold Reduction in Interface Thermal Resistance for Heat Sink Mounting" D. Van Heerden, O. M. Knio, and T. P. Weihs; Reaktive Nano Technologies, 111 Lake Front Drive, Hunt Valley, MD 21030.[1] "A Tenfold Reduction in Interface Thermal Resistance for Heat Sink Mounting" D. Van Heerden, O.M. Knio, and T.P. Weihs; Reactive Nano Technologies, 111 Lake Front Drive, Hunt Valley, MD 21030.
[2] "Direct Die Attach With Indium Using a Room Temperature Soldering Process" J. S. Subramanian, T. Rüde, J. Newson, Z. He, E. Besnoin, T. Weihs; Reaktive Nano Technologies, 111 Lake Front Drive, Hunt Valley, MD 21030. [2] "Direct Attach with Indium Using a Room Temperature Soldering Process" J.S. Subramanian, T. Rüde, J. Newson, Z. He, E. Besnoin, T. Weihs; Reactive Nano Technologies, 111 Lake Front Drive, Hunt Valley, MD 21030.

Claims

Patentansprüche claims
1. Verfahren zur Erzeugung mindestens einer elektrischen Verbindung (1) von mindestens einem auf einem Substrat (3), in- nerhalb einer Verkapselung (5) positionierten elektronischen Bauelement (7) nach außerhalb der Verkapselung (5), gekennzeichnet durch die Schritte1. A method for generating at least one electrical connection (1) of at least one on a substrate (3), within an encapsulation (5) positioned electronic component (7) to the outside of the encapsulation (5), characterized by the steps
Fixieren mindestens einer strukturierten, beidseitig mit jeweils einer Lotschicht beschichteten, die elektrische Verbin- düng (1) erzeugenden, reaktiven Nanofolie (2) auf dem Substrat (3) ;Fixing at least one structured reactive nanofoil (2) which is coated on both sides with a respective solder layer and produces the electrical connection (1) on the substrate (3);
Ankontaktieren des elektronischen Bauelements (7) an die Nanofolie (2), auf der dem Substrat (3) abgewandten Seite der Nanofolie (2) ; Erzeugen der Verkapselung (5) um das elektronische Bauelement (7) herum, auf dem Substrat (3) und/oder auf der Nanofolie (2);Contacting the electronic component (7) to the nanofoil (2), on the side of the nanofoil (2) facing away from the substrate (3); Generating the encapsulation (5) around the electronic component (7), on the substrate (3) and / or on the nanofoam (2);
Aktivieren einer exothermen Reaktion der Nanofolie (2) außerhalb der Verkapselung (5) , an einem Ausgang der elektrischen Verbindung (1) aus der Verkapselung (5) zum Verschließen des Ausgangs .Activating an exothermic reaction of the nanofoil (2) outside the encapsulation (5) at an output of the electrical connection (1) from the encapsulation (5) to close the exit.
2. Verfahren nach Anspruch 1, gekennzeichnet durch Aktivieren einer exothermen Reaktion der Nanofolie (2) außerhalb der Verkapselung (5) zum Kontaktieren der elektrischen Verbindung (1) an mindestens einen elektrischen Kontakt.2. The method according to claim 1, characterized by activating an exothermic reaction of the nanofoil (2) outside the encapsulation (5) for contacting the electrical connection (1) to at least one electrical contact.
3. Verfahren nach Anspruch 1, gekennzeichnet durch3. The method according to claim 1, characterized by
Aktivieren einer einzigen exothermen Reaktion der Nanofolie (2) zum gleichzeitigen Verschließen des Ausgangs und Kontaktieren der elektrischen Verbindung (1) an mindestens einen elektrischen Kontakt. Activating a single exothermic reaction of the nanofoil (2) to simultaneously close the exit and contacting the electrical connection (1) to at least one electrical contact.
4. Verfahren nach Anspruch 1, 2 oder 3, gekennzeichnet durch4. The method according to claim 1, 2 or 3, characterized by
Aktivieren einer exothermen Reaktion der Nanofolie (2) mittels eines Laserstrahls.Activating an exothermic reaction of the nanofoil (2) by means of a laser beam.
5. Verfahren nach Anspruch 4, gekennzeichnet durch den Laserstrahl eines Kohlendioxid- und/oder Diodenlasers.5. The method according to claim 4, characterized by the laser beam of a carbon dioxide and / or diode laser.
6. Verfahren nach einem der Ansprüche 1 bis 5, gekennzeichnet durch6. The method according to any one of claims 1 to 5, characterized by
Fixieren der Nanofolie (2) auf dem Substrat (3) mittels eines Klebers .Fixing the nanofoil (2) on the substrate (3) by means of an adhesive.
7. Verfahren nach einem der Ansprüche 1 bis 6, gekennzeichnet durch7. The method according to any one of claims 1 to 6, characterized by
Ankontaktieren des elektronischen Bauelements (7) auf der Nanofolie (2) mittels eines Leitklebers.Contacting the electronic component (7) on the nanofoil (2) by means of a conductive adhesive.
8. Verfahren nach einem der Ansprüche 1 bis 7, gekennzeichnet durch Erzeugen der Verkapselung (5) mittels Glas und/oder Keramik.8. The method according to any one of claims 1 to 7, characterized by generating the encapsulation (5) by means of glass and / or ceramic.
9. Verfahren nach einem der Ansprüche 1 bis 8, gekennzeichnet durch9. The method according to any one of claims 1 to 8, characterized by
Erzeugen mindestens einer elektrischen Durchkontaktierung (13) durch das Substrat (3) von der Nanofolie (2) zu mindestens einer Metallisierung (15) auf der der Nanofolie (2) abgewandten Seite des Substrats (3) .Generating at least one electrical through-connection (13) through the substrate (3) from the nanofoil (2) to at least one metallization (15) on the side of the substrate (3) facing away from the nanofoil (2).
10. Verfahren nach Anspruch 9, gekennzeichnet durch10. The method according to claim 9, characterized by
Erzeugen der Durchkontaktierung mittels mehrlagiger High Tem- perature Cofired Ceramics (HTCC; Hochtemperatur- Mehrlagenkeramiken) . Production of the via via multilayer high temperature cofired ceramics (HTCC; high temperature multilayer ceramics).
11. Vorrichtung aufweisend mindestens eine elektrische Verbindung (1) von mindestens einem auf einem Substrat (3), innerhalb einer Verkapselung (5) , fixierten elektronischen Bauelement (7) nach außerhalb der Verkapselung (5), dadurch gekennzeichnet, dass die Vorrichtung nach einem Verfahren der vorangehenden Ansprüche erzeugt worden ist. 11. Device comprising at least one electrical connection (1) of at least one on a substrate (3), within an encapsulation (5), fixed electronic component (7) to the outside of the encapsulation (5), characterized in that the device according to a Method of the preceding claims has been generated.
EP09738149A 2008-04-28 2009-04-28 Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm Withdrawn EP2269213A1 (en)

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DE102008021167A DE102008021167B3 (en) 2008-04-28 2008-04-28 Method for producing a hermetically sealed, electrical feedthrough by means of exothermic nanofoil and device produced therewith
PCT/EP2009/055131 WO2009133105A1 (en) 2008-04-28 2009-04-28 Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm

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CN102017110B (en) 2012-06-27
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