DE102004011808A1 - Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer - Google Patents

Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer Download PDF

Info

Publication number
DE102004011808A1
DE102004011808A1 DE102004011808A DE102004011808A DE102004011808A1 DE 102004011808 A1 DE102004011808 A1 DE 102004011808A1 DE 102004011808 A DE102004011808 A DE 102004011808A DE 102004011808 A DE102004011808 A DE 102004011808A DE 102004011808 A1 DE102004011808 A1 DE 102004011808A1
Authority
DE
Germany
Prior art keywords
substrate
power module
housing
metal layer
wire bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102004011808A
Other languages
German (de)
Inventor
Johannes Dürr
Andreas Fischer
Ingo Henkel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE102004011808A priority Critical patent/DE102004011808A1/en
Publication of DE102004011808A1 publication Critical patent/DE102004011808A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The module has a semiconductor component e.g. power MOS device, which is mounted on a copper layer (4) of a substrate (2). The component is connected with a contacting copper layer (5) provided on top side of a ceramic body (3) using a wire bond (10). A molded housing (11) made of thermosetting material surrounds the component and the bond. A connection area is left out from the housing and is freely suspended on the layer (5). An independent claim is also included for a method of manufacturing a power module.

Description

Die Erfindung betrifft ein Leistungsmodul, das insbesondere für Automotiv-Anwendungen geeignet ist.The The invention relates to a power module, especially for automotive applications suitable is.

Im Bereich der Leistungselektronik werden Module zum Teil mittels DBC (Direct Bonding Copper) -Substraten gebildet, auf die Halbleiter gelötet und drahtgebondet werden. Eine Passivierung der Drahtbonds und Halbleiter erfolgt durch einen aufgebrachten Weichverguss.in the In the field of power electronics, modules are partly using DBC (Direct Bonding Copper) substrates formed on the semiconductor soldered and be wire bonded. A passivation of wire bonds and semiconductors done by an applied soft potting.

Bei derartigen Leistungsmodulen tritt jedoch nach etwa 200.000 Temperaturwechselzyklen mit einem Hub von ca. 80 K eine irreversible Zerrüttung der Bondverbindungen des Halbleiters auf, die zum elektrischen Ausfall der gesamten Schaltung führen kann. Derartige Temperaturzyklen treten jedoch insbesondere im Automotiv-Bereich auf, wo ein Ausfall eines Leistungsmoduls schwerwiegende Folgen haben kann.at However, such power modules occurs after about 200,000 cycles of thermal cycling with a stroke of about 80 K an irreversible disruption of the bonds of the semiconductor, leading to electrical failure of the entire circuit can lead. However, such temperature cycles occur especially in the automotive sector on where a failure of a power module has serious consequences may have.

Das erfindungsgemäße Leistungsmodul und das erfindungsgemäße Verfahren zu dessen Herstellung weisen demgegenüber insbesondere den Vorteil auf, dass bei Temperaturwechselbeanspruchungen eine geringe Scherbelastung auf die Bondverbindungen auftritt und somit eine deutliche Erhöhung der Lebensdauer erreicht wird. Diese kann gegenüber den eingangs genannten Leistungsmodulen mit einer Passivierung aus Weichverguss um einen Faktor 5 bis 10 erhöht sein.The Power module according to the invention and the method according to the invention for its production, in contrast, have the particular advantage of that under thermal cycling a low shear stress on the bond connections occurs and thus a significant increase in the life is reached. This can be compared to the Power modules mentioned above with passivation from soft potting increased by a factor of 5 to 10 be.

Hierbei werden erfindungsgemäß Anschlussbereiche in den Metall schichten durch Freisparungen in dem Mold-Gehäuse ausgebildet, wodurch eine sichere Kontaktierung des Moduls ermöglicht wird. Gegenüber herkömmlichen Modulen mit vollständig ummoldetem Gesamtaufbau und Anschlussfahnen wird erfindungsgemäß ein besserer Toleranzausgleich ermöglicht und die Zuverlässigkeit im konstruktionsbedingten Einbauraum erhöht.in this connection become connection areas according to the invention formed in the metal layers by recesses in the mold housing, whereby a secure contact of the module is made possible. Across from usual Modules with complete ummoldetem overall structure and terminal lugs according to the invention a better tolerance compensation allows and the reliability in the increased construction-related installation space.

Das erfindungsgemäße Leistungsmodul ist somit mit geringem Aufwand und kostengünstig herstellbar, weist eine hohe Lebensdauer und eine hohe Zuverlässigkeit, insbesondere auch in sicherheitsrelevanten Automotiv-Anwendungen, auf.The Power module according to the invention is thus with little effort and inexpensive to produce, has a high durability and high reliability, especially in safety-critical automotive applications, on.

Die Erfindung wird im Folgenden anhand der beiliegenden Zeichnung an einer Ausführungsform näher erläutert. Die 1 zeigt einen Querschnitt durch ein erfindungsgemäßes Leistungsmodul.The invention will be explained in more detail below with reference to the accompanying drawings of an embodiment. The 1 shows a cross section through a power module according to the invention.

Ein Leistungsmodul 1 weist ein DBC-Substrat 2 mit einem Keramikkörper 3 und auf der Ober- bzw. Unterseite des Keramikkörpers 3 aufgebrachte Kupfer-Flächen 4, 5 und 6 bzw. Kupfer-Kaschierungen auf. Auf einer Kupfer-Fläche 4 auf der Oberseite des Keramikkörpers 3 ist ein Halbleiter-Bauelement 9, z. B. ein Power-MOS oder ein IGBT, in an sich bekannter Weise aufgesetzt. Das Halbleiter-Bauelement 9 ist über einen oder mehrere Drahtbonds 10 aus z. B. Aluminium mit einer auf der Oberseite des Keramickörpers 3 aufgebrachten, zur externen Kontaktierung dienenden Kupfer-Schicht 5 des DBC-Substrates 2 kontaktiert. Auf dem DBC-Substrat 2 sind hierbei im Allgemeinen ein oder mehrere Halbleiter-Bauelemente 9 aufgesetzt und mit mehreren, der externen Kontaktierung dienenden Kontaktierungs-Kupferschichten 5 über Drahtbonds 10 kontaktiert.A power module 1 has a DBC substrate 2 with a ceramic body 3 and on the top and bottom of the ceramic body 3 applied copper surfaces 4 . 5 and 6 or copper laminations. On a copper surface 4 on the top of the ceramic body 3 is a semiconductor device 9 , z. As a power MOS or IGBT, set up in a conventional manner. The semiconductor device 9 is about one or more wire bonds 10 from z. For example, aluminum with one on the top of Keramickörpers 3 applied, serving for external contacting copper layer 5 of the DBC substrate 2 contacted. On the DBC substrate 2 are in this case generally one or more semiconductor devices 9 mounted and with several, the external contacting serving contacting copper layers 5 over wire bonds 10 contacted.

Das DBC-Substrat 2 mitsamt aufgenommenen Halbleiter-Bauelementen 9 sowie internen Drahtbonds 10 ist durch einen Transfer-Moldprozess in eine Moldmasse aus einem Duroplast eingemoldet, wodurch ein Gehäuse 11 ausgebildet ist. Hierdurch wird eine vollständige Passivierung des mindestens einen Halbleiter-Bauelementes 9 und der internen Drahtbonds 10 erreicht. Die auf der Unterseite des DBC-Substrats 2 ausgebildeten Kupfer-Flächen 6 sind hierbei vorteilhafterweise von der Moldmasse des Gehäuses 11 nicht bedeckt, wodurch eine bessere Wärmekopplung bzw. Wärmeabfuhr erreicht wird und ggf. auch eine Kontaktierung möglich ist.The DBC substrate 2 together with recorded semiconductor components 9 and internal wire bonds 10 is by a transfer molding process in a molding compound made of a thermosetting plastic, creating a housing 11 is trained. This results in a complete passivation of the at least one semiconductor device 9 and the internal wire bonds 10 reached. The on the bottom of the DBC substrate 2 trained copper surfaces 6 are hereby advantageously of the molding compound of the housing 11 not covered, whereby a better heat coupling or heat dissipation is achieved and possibly also a contact is possible.

Ein als Anschlussbereich 12 bzw. Anschlusspad dienender Bereich der Kontaktierungs-Kupferschicht 5 wird von dem Gehäuse 11 ausgespart und liegt nach oben hin frei. Die Anschlussbereiche 12 sind hierbei im allgemeinen zu allen Seiten hin von dem Gehäuse 11 umgeben. Die Anschlussbereiche 12 dienen der Kontaktierung des in dem Leistungsmodul 1 aufgenommenen mindestens einen Halbleiter-Bauelementes 9 und werden nach Fertigstellung des Leistungsmoduls 1 über externe Drahtbonds 14 aus z. B. Al oder Au mit weiteren Bauteilen 15, z. B. Einlegeteilen einer umgebenen Konstruktion, verbunden.On as a connection area 12 or Anschlusspad serving area of the contacting copper layer 5 is from the case 11 left out and is free upwards. The connection areas 12 are in this case generally on all sides of the case 11 surround. The connection areas 12 serve to contact the in the power module 1 recorded at least one semiconductor device 9 and will be after completion of the power module 1 via external wire bonds 14 from z. B. Al or Au with other components 15 , z. B. inserts of a surrounding construction connected.

Anstelle eines DBC-Substrates kann entsprechend auch ein anderes metallisiertes Keramiksubstrat, z. B. ein Aluminiumoxid-Aluminium-Substrat verwendet werden. Anstelle der Anschlussbereiche 12 können auch von dem DBC-Substrat 2 seitlich abstehende Metalllaschen aus dem Gehäuse 11 herausragen und der externen Kontaktierung dienen.Instead of a DBC substrate, another metallized ceramic substrate, for. For example, an alumina-aluminum substrate can be used. Instead of the connection areas 12 can also from the DBC substrate 2 laterally protruding metal tabs from the housing 11 stand out and serve the external contact.

Zur Herstellung des Leistungsmoduls 1 werden auf die geeigneten Kupfer-Schichten 4 des DBC-Substrates 2 zunächst das oder die Halbleiter-Bauelement(e) 9 in an sich bekannter Weise aufgesetzt und mit den Kontaktierungs-Kupferschichten 5 durch Drahtbonds 10 kontaktiert. Nachfolgend wird das Gehäuse 11 durch einen Transfer-Moldprozess mit einem Duroplast ausgebildet, wobei die Anschlussbereiche 12 z. B. durch einen Stempel freigehalten werden können. Nach dem Erkalten kann das so hergestellte Leistungsmodul 1 über die externen Drahtbonds 14 kontaktiert werden.For the production of the power module 1 be on the appropriate copper layers 4 of the DBC substrate 2 first the semiconductor device (s) 9 placed in a conventional manner and with the contacting copper layers 5 through wire bonds 10 contacted. Below is the case 11 formed by a transfer molding process with a thermoset, wherein the terminal areas 12 z. B. can be kept free by a stamp. After cooling, that can thus produced power module 1 via the external wire bonds 14 be contacted.

Claims (8)

Leistungsmodul, das mindestens aufweist: ein Substrat (2) mit einem Keramikkörper (3) und Metallschichten (4, 5, 6), ein auf einer Metallschicht (4) des Substrates (2) befestigtes Halbleiter-Bauelement (9), mindestens einen Drahtbond (10), der das Halbleiter-Bauelement (9) mit einer Kontaktierungs-Metallschicht (5) auf der Oberseite des Keramikkörpers (3) kontaktiert, und ein gemoldetes Gehäuse (11) aus einem duroplastischen Material, in das das Substrat (2), der mindestens eine Drahtbond (10) und das Halbleiter-Bauelement (9) eingemoldet sind, wobei auf der Kontaktierungs-Metallschicht (5) ein Anschlussbereich (12) von dem Gehäuse (11) ausgespart ist und freiliegt.Power module comprising at least: a substrate ( 2 ) with a ceramic body ( 3 ) and metal layers ( 4 . 5 . 6 ), one on a metal layer ( 4 ) of the substrate ( 2 ) mounted semiconductor device ( 9 ), at least one wire bond ( 10 ), which the semiconductor device ( 9 ) with a contacting metal layer ( 5 ) on top of the ceramic body ( 3 ), and a molded case ( 11 ) of a thermosetting material into which the substrate ( 2 ), which has at least one wire bond ( 10 ) and the semiconductor device ( 9 ), wherein on the contacting metal layer ( 5 ) a connection area ( 12 ) of the housing ( 11 ) is left out and exposed. Halbleiter-Bauelement nach Anspruch 1, dadurch gekennzeichnet, dass das Gehäuse (11) in einem Transfer-Moldprozess ausgebildet ist.Semiconductor component according to Claim 1, characterized in that the housing ( 11 ) is formed in a transfer molding process. Leistungsmodul nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Anschlussbereiche (12) zu allen Seiten hin von dem Gehäuse (11) umgeben sind.Power module according to claim 1 or 2, characterized in that the connection areas ( 12 ) on all sides of the housing ( 11 ) are surrounded. Leistungsmodul nach einem der vorherigen Ansprüche, dadurch gekennzeichnet, dass eine auf der Unterseite des Substrates (3) ausgebildete Metallschicht (6) freiliegt.Power module according to one of the preceding claims, characterized in that one on the underside of the substrate ( 3 ) formed metal layer ( 6 ) is exposed. Leistungsmodul nach einem der vorherigen Ansprüche, dadurch gekennzeichnet, dass das Substrat ein DBC-Substrat (2) oder Aluminium-Aluminiumoxid-Substrat ist.Power module according to one of the preceding claims, characterized in that the substrate is a DBC substrate ( 2 ) or aluminum-alumina substrate. Leistungsmodul nach einem der vorherigen Ansprüche, dadurch gekennzeichnet, dass das Halbleiter-Bauelement (9) ein Power-MOS oder IGBT-Bauelement ist.Power module according to one of the preceding claims, characterized in that the semiconductor component ( 9 ) is a power MOS or IGBT device. Verfahren zum Herstellen eines Leistungsmoduls, mit mindestens folgenden Schritten: Bereitstellen eines metallbeschichteten Keramik-Substrates (2), Anbringen mindestens eines Halbleiter-Bauelementes (9) auf einer Metallschicht (4) auf der Oberseite des Substrates (2), Kontaktieren des Halbleiter-Bauelementes (9) mit mindestens einer Kontaktierungs-Metallschicht (5) des Substrates (2) durch einen Drahtbond (10), Molden eines Gehäuses (11) aus einem duroplastischen Material derartig, dass das gemoldete Gehäuse (11) das Substrat (2), das mindestens eine Halbleiter-Bauelement (9) und den mindestens einen Drahtbond (10) derartig umgibt, dass ein Anschlussbereich (12) der Kontaktierungs-Metallschicht (5) von der Mold-Masse freigelassen wird.Method for producing a power module, comprising at least the following steps: providing a metal-coated ceramic substrate ( 2 ), Attaching at least one semiconductor device ( 9 ) on a metal layer ( 4 ) on top of the substrate ( 2 ), Contacting the semiconductor device ( 9 ) with at least one contacting metal layer ( 5 ) of the substrate ( 2 ) through a wire bond ( 10 ), Molden of a housing ( 11 ) of a thermosetting material such that the molded housing ( 11 ) the substrate ( 2 ), the at least one semiconductor device ( 9 ) and the at least one wire bond ( 10 ) such that a connection area ( 12 ) of the contacting metal layer ( 5 ) is released from the mold mass. Verfahren nach dem vorherigen Anspruch, dadurch gekennzeichnet, dass eine auf der Unterseite des Substrates (2) ausgebildete Metallschicht (6) beim Molden freigelassen wird.Method according to the preceding claim, characterized in that one on the underside of the substrate ( 2 ) formed metal layer ( 6 ) when Molden is released.
DE102004011808A 2004-03-11 2004-03-11 Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer Withdrawn DE102004011808A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102004011808A DE102004011808A1 (en) 2004-03-11 2004-03-11 Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004011808A DE102004011808A1 (en) 2004-03-11 2004-03-11 Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer

Publications (1)

Publication Number Publication Date
DE102004011808A1 true DE102004011808A1 (en) 2005-09-29

Family

ID=34895180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004011808A Withdrawn DE102004011808A1 (en) 2004-03-11 2004-03-11 Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer

Country Status (1)

Country Link
DE (1) DE102004011808A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005061773B3 (en) * 2005-12-23 2007-05-16 Danfoss Silicon Power Gmbh Method of producing power semiconductor module and such a module in a carrier has pressure element in carrier during and after filling inner space with plastic and hardening
WO2013091962A1 (en) * 2011-12-19 2013-06-27 Robert Bosch Gmbh Transmission control module
WO2015165800A1 (en) * 2014-04-30 2015-11-05 Conti Temic Microelectronic Gmbh Circuit arrangement, and current transformer having a circuit arrangement

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005061773B3 (en) * 2005-12-23 2007-05-16 Danfoss Silicon Power Gmbh Method of producing power semiconductor module and such a module in a carrier has pressure element in carrier during and after filling inner space with plastic and hardening
WO2013091962A1 (en) * 2011-12-19 2013-06-27 Robert Bosch Gmbh Transmission control module
US9532460B2 (en) 2011-12-19 2016-12-27 Robert Bosch Gmbh Transmission control module
WO2015165800A1 (en) * 2014-04-30 2015-11-05 Conti Temic Microelectronic Gmbh Circuit arrangement, and current transformer having a circuit arrangement
CN106575640A (en) * 2014-04-30 2017-04-19 大陆泰密克微电子有限责任公司 Circuit arrangement, and current transformer having a circuit arrangement
US10312179B2 (en) 2014-04-30 2019-06-04 Conti Temic Microelectronic Gmbh Circuit arrangement, and current transformer
CN106575640B (en) * 2014-04-30 2019-11-05 大陆泰密克微电子有限责任公司 Line unit, the current converter with line unit

Similar Documents

Publication Publication Date Title
DE102011053871B4 (en) Multichip semiconductor packages and their assembly
DE102010044709B4 (en) Power semiconductor module with metal sintered connections and manufacturing process
DE112013007390B4 (en) Semiconductor module, semiconductor device and vehicle
DE102014213564B4 (en) Semiconductor device and method for manufacturing the same
DE102015100011B4 (en) Chip embedding housing with chip connection on the back
DE102007017831B4 (en) Semiconductor module and a method for producing a semiconductor module
EP2019429A1 (en) Module with an electronic component electrically connected between two substrates, in particular DCB ceramic substrates, and production method thereof
DE102015106552B4 (en) Electronic module with fluid cooling channel and method for manufacturing the same
DE102008009510B3 (en) Method for low-temperature pressure sintering
DE102012210440A1 (en) Semiconductor module
EP2796016A1 (en) Transmission control module
DE102008023711A1 (en) Semiconductor module and method for producing a semiconductor module
WO2008009524A1 (en) Electronic arrangement
DE102020001261A1 (en) SEMICONDUCTOR ENCLOSURE AND RELATED PROCEDURES
DE102018205243A1 (en) Electronic power control module and method of manufacturing an electronic power control module
DE102004057421B4 (en) Pressure-contacted power semiconductor module for high ambient temperatures and method for its production
WO2005106954A2 (en) Power semiconductor circuit and method for producing a power semiconductor circuit
DE10157362B4 (en) Power module and method for its production
DE102008040727A1 (en) Method and device for determining the rotor temperature of a permanent-magnet synchronous machine
DE102004011808A1 (en) Power module for automotive application, has molded housing surrounding semiconductor component and wire bond, and connection area left out from housing and suspended on layer
DE102012209034A1 (en) Electronic module and method for producing such an electronic module, and electronic control unit with such an electronic module
DE102015100868B4 (en) Integrated circuit and method of making an integrated circuit
EP3053192B1 (en) Circuit device and method for the production thereof
DE102012201889A1 (en) Electrical power module has electronic components for electrically coupling contact elements, and punched grid that is arranged for coupling contact elements and one side of electronic component
EP2609620B1 (en) Method for producing an electrical circuit and electrical circuit

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023150000

Ipc: H01L0023310000

Effective date: 20110609

Free format text: PREVIOUS MAIN CLASS: H01L0023150000

Ipc: H01L0023310000

R016 Response to examination communication
R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R006 Appeal filed
R008 Case pending at federal patent court
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee