EP2266162B1 - Filtre à résonance à faibles pertes - Google Patents

Filtre à résonance à faibles pertes Download PDF

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Publication number
EP2266162B1
EP2266162B1 EP09730813A EP09730813A EP2266162B1 EP 2266162 B1 EP2266162 B1 EP 2266162B1 EP 09730813 A EP09730813 A EP 09730813A EP 09730813 A EP09730813 A EP 09730813A EP 2266162 B1 EP2266162 B1 EP 2266162B1
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EP
European Patent Office
Prior art keywords
layer
cavities
coupling
filter
resonant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
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EP09730813A
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German (de)
English (en)
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EP2266162A1 (fr
Inventor
William Gautier
Bernhardt SCHÖNLINNER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
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EADS Deutschland GmbH
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Publication of EP2266162A1 publication Critical patent/EP2266162A1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2088—Integrated in a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
    • H01P11/002—Manufacturing hollow waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/008—Manufacturing resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H01P7/065—Cavity resonators integrated in a substrate

Definitions

  • the invention relates to the field of resonant filters. More particularly, the invention relates to such resonant filters which are suitable for use in the micro and millimeter wave range, and in particular to those filters which are produced by microtechnical processes. Moreover, the invention relates to a method for producing such filters.
  • Filters for separating frequencies are widely used in the art.
  • electrical and optical filters are used. These filters have in general the task of limiting a voltage applied to its input wide spectrum of frequencies and / or to transform and provide at its output.
  • a good filter blocks as precisely as possible only those frequencies which are outside the desired range, and allows the frequencies within the desired band to pass almost unhindered, that is, without loss.
  • the loss factor and the selectivity which can be given simplified by the so-called Q-factor (also quality factor) of the filter, are therefore important distinguishing features of filters. Normally, filters with low losses and high quality are desired.
  • resonance filters A frequently used physical principle for the realization of filters is based on resonance; the corresponding filters are accordingly called resonance filters. These are offered, for example, as waveguide or in coaxial design. Although such filters meet the technical requirements of high quality and low losses, but are design-related large, heavy and expensive. Furthermore, such filters are difficult to combine with the planar design conventional circuit technology.
  • the cavities of such resonant filters are produced, for example, by etching from silicon wafers.
  • the cavities are produced by wet etching of several individual wafers. Thereafter, the processed wafers are placed on each other, positioned exactly to each other and permanently connected. The coupling of the different layers takes place by means of openings in a metal layer covering the wafers.
  • the cavities by means of RIE (r eactive I on E tching) was prepared. This method additionally allows the production of the coupling openings necessary for the coupling of individual wafers together with the cavities and in the same wafer.
  • a disadvantage of the first design is the need to adjust a plurality of (for example, five or more) wafers, which must be placed and positioned exactly on top of each other.
  • a disadvantage of the second type is the high cost involved in manufacturing by RIE since, despite the use of silicon as the base material, the advantage of low cost manufacturing by wet etching techniques can not be used.
  • the WO 2004 045018 A1 overcomes the disadvantages described above by etching cavities by means of wet-chemical methods into at least two silicon wafers and then positioning them one above the other.
  • the Resonant cavities are formed by cavities, which are present in both wafers.
  • the coupling cavities are located in only one of the wafers. Again, precise positioning of the wafers relative to one another is necessary, especially if more than two wafers form a filter, but also because the resonant cavities consist of two halves and show the desired filter properties only when assembled accurately.
  • the object of the invention is therefore to avoid the disadvantages described in the prior art, in particular a lack of integrability in planar circuit technology, too large a size, too high a weight and too high costs due to an elaborate production technique.
  • the invention is intended to provide a filter with very low losses and high quality.
  • a low loss, high Q-factor resonant filter which consists of two layers, of which a first layer carries only resonant cavities and a second layer exclusively coupling cavities.
  • a method of making the filter of the invention is also provided.
  • the sole FIGURE shows a resonant filter 1 of the invention in cross-sectional view.
  • the filter 1 is composed of exactly two layers, namely of a first layer 2 and a second layer 3.
  • the first layer 2 comprises two resonance cavities 4. These are closed in all directions, except for a direction which lies on the surface of the first layer 2. From this direction, the cavities 4 have been produced by selectively removing material from the first layer 2. Between the two resonant cavities is a partition 8.
  • the second layer 3 comprises a coupling cavity 5. Also, this is closed in all directions, except for a direction which lies on the surface of the second layer 3. From this direction, the cavity 5 has been produced.
  • the two layers 2 and 3 are superimposed in such a way that touch the respective surfaces in which the cavities 4 and 5 are located. Further, the two layers 2 and 3 are positioned one above the other so that the coupling cavity 5 creates a connection between the two resonance cavities 4.
  • the filter 1 also comprises an input 6 and an output 7, which in each case adjoins one of the two resonance cavities 4, so that the corresponding signal to be filtered can be fed into or out of the filter.
  • the input and / or the output are executed as MSLs, indicated by the thick drawn horizontal lines.
  • the invention relates to a resonant filter which is suitable for use in the micro and millimeter wave range, and can be produced by microtechnical processes. Moreover, the invention relates to a method for producing such filters, which is characterized in particular by the fact that it uses cost-effective production methods from silicon technology. In use, the filter shows low losses and high quality, its design is small and flat, and it can therefore be well integrated into the planar fabrication of microelectronic circuits.
  • the resonant filter according to the invention for use in the micro and millimeter wave range consists according to a preferred embodiment of silicon. It has a first layer, which in turn has n adjacent resonance cavities, where n is at least 2. Depending on the application, the number of layers can also be greater than 2.
  • the resonance cavities are each separated by a partition wall. It also has a second layer with coupling cavities.
  • the number of coupling cavities is advantageously at least n-1, since, for example, a coupling cavity couples two resonance cavities together, or two coupling cavities are sufficient to couple three resonance cavities together.
  • the cavities of the first layer are formed exclusively as resonance cavities and the cavities of the second layer exclusively as coupling cavity (s). That is, there are no coupling cavities or parts thereof in the first layer and no resonant cavities or parts thereof in the second layer.
  • the functional separation of the tasks is also reflected in the layers which can be produced separately from one another, from which, inter alia, the advantage arises that each layer can be produced with a production method optimally adapted to its task.
  • Each of the resonance and coupling cavities is only one-sided and particularly preferably open to one of its outer surfaces. Accordingly owns none of the layers perpendicular through openings or openings, which increases the stability and manageability of the very thin wafer layers.
  • the second layer is arranged on the first layer such that the individual resonance cavities of the first layer are interconnected by means of the coupling cavity (s) of the second layer.
  • the first resonant cavity overlap with the first coupling cavity, this in turn with the second resonant cavity, and so on.
  • the coupling cavities thereby bridge the partitions that are located between the resonance cavities, thus creating a continuous connection between the first and the last Resonanzkavtician.
  • a particularly exact positioning of the second on the first layer is not necessary, as long as it is ensured that the connection according to the invention between the individual resonance cavities is ensured. In the present invention, this is because the electromagnetic coupling is not very sensitive to positioning tolerances due to the coupling activity.
  • the filter is designed as a monolithic component, since both layers are permanently and firmly configured to be connected to one another.
  • the permanent and firm connection of the layers together is achieved, for example, by thermocompression bonding of the layers.
  • the permanent and hermetic bonding of the layers can be effected by anodic bonding, silicon direct bonding, glass-frit bonding, low-temperature bonding or by adhesive bonding, for example with adhesive or photoresist. If at least one of the layers consists of a material other than silicon, for example of glass, plastic or ceramic, the permanent and hermetic bonding of the layers is adapted to the type of bonding surfaces.
  • the filter also has means for coupling and decoupling the signal to be filtered.
  • these are in the form of MSRs (m icro s trip l ines).
  • MSRs m icro s trip l ines.
  • the MSLs have a width in the Range of 1 to 10 microns and a length in the range of 100 to 1000 microns.
  • the MSLs may also be filled with a dielectric or consist of a better coupling or decoupling of the signal.
  • the length of the MSL can be arbitrary.
  • the geometries of the filter and in particular of the resonant cavities are dimensioned so that they are designed for use of the filter in the micro to millimeter wave range.
  • the geometries are dimensioned so that the filter is suitable for use in areas of smaller, according to another embodiment, for use in areas of longer wavelengths. This adaptation can preferably be achieved by an enlargement or reduction and in particular an extension or shortening of the resonance cavities.
  • the geometries of the resonance cavities are designed such that they can be changed, as a result of which the operating wavelength range likewise becomes variable. In this way, the filter can be adapted to different tasks without having to replace it.
  • the filter is configured tunable. This means that it has suitable facilities that allow a simple and permanent change of the operating wavelength range within certain limits. Since the properties of resonant filters are also subject to certain variations due to slight variations in the manufacturing process and / or temperature changes during operation, which in particular also affect their resonant frequency, which is relevant inter alia for their operating wavelength range, it is advantageous if after the production of a filter Possibility for subsequent fine tuning of the resonant frequency is given.
  • Such structures may be ferroelectric tuning diodes or capacitance diodes whose capacitance is tunable, for example, by applying a voltage and / or changing the temperature.
  • Other means of tuning include components having one or more integrated capacitors whose capacitances may be changed, for example by electro-optic and / or thermo-optic modifications of existing polymers, or by the fact that capacitors consist of a fixed and a movable part, for example of a membrane or a Strips that face each other and are mutually insulated, wherein the displacement of the movable part is electrostatically, piezoelectrically and / or thermally actuated.
  • Still other means for tuning the filter include stubs balanced by laser beam-induced material changes.
  • at least one of the layers of the filter instead of silicon from a material such as glass, plastic and ceramic exist.
  • the use of a material other than silicon may be useful or even necessary.
  • the first layer has a thickness in the range of 1200 microns and the second layer has a thickness in the range of 200 microns.
  • both layers may be the same thickness.
  • both layers may originally consist of a layer which, after the introduction of the corresponding structures (in particular of the cavities) into individual segments is separated, which then form the first and the second layer.
  • the resonant filter accordingly has, in a first, thicker layer, two resonant cavities with a rectangular outline and a trapezoidal cross-section, and also a dividing wall which is arranged so as to separate both resonant cavities.
  • the coupling cavity has a coupling cavity arranged in a second, thinner layer and likewise rectangular, but preferably smaller, with a trapezoidal cross-section.
  • the lateral dimensions of the coupling cavity are at least so great that it is at least a few micrometers larger than the thickness of the dividing wall.
  • the coupling activity is typically about 100 to 500 micrometers beyond the partition.
  • the second layer and the first layer are designed such that they can be laid over one another in such a way that the coupling cavity, if it is arranged above the dividing wall, surmounts it symmetrically on both sides in the direction of the resonant cavities, so that it forms a connection between the two resonant cavities.
  • the filter further comprises means for coupling and uncoupling in the form of MSLs (microstrip lines), which are each arranged on the outer surface of the second layer and have a position and length, due to which each MSL at least partially above each below
  • MSLs microstrip lines
  • a method for producing the resonance filter according to the invention is also provided.
  • This method preferably uses micro-technical production methods for silicon wafers, it being understood that in the case of other filter materials (in particular with regard to the materials of the first and / or second layer), a production method adapted to the material must be selected. Therefore, the embodiments mentioned in the steps enumerated here should not be construed as limiting, but rather as a guideline.
  • both layers can be masked in parallel and then treated together (eg, etched), wherein the masking and treatment can take place at least parallel in time, but can also be spatially parallelized. That means both layers initially consist of a single layer, then masked, treated, and finally separated from each other.
  • the treatment of the layers takes place in particular for the production of the cavities by means of KOH or TMAH etching.
  • the silicon layers are metallized and / or patterned on one or both sides before or after their combination. Since gold has high electrical conductivity, can not be oxidized, and can be used in thermocompression bonding, gold is preferably used for the very thin metallization. Other materials which also have good electrical conductivity may also be used for the metallization of the layers, such as e.g. Copper, aluminum or other metal alloys.
  • the further structuring of the layers is carried out by conventional Aufschleudem of photoresist, exposure and subsequent dry and / or wet etching.
  • the permanent bonding of the layers takes place by thermocompression bonding of the layers.
  • the permanent and hermetic bonding of the layers takes place by anodic bonding, direct silicon bonding, glass-frit bonding, low-temperature bonding or by adhesive bonding, for example with adhesive or photoresists. If at least one of the layers consists of a material other than silicon, the permanent and hermetic bonding of the layers is adapted to the type of interface.
  • the production of the cavities takes place by means of Hot stamping, injection molding or so-called nano-imprint process.
  • hot stamping is a particularly preferred manufacturing process.
  • injection molding can be chosen as the manufacturing process.
  • the nano-imprint process can preferably be selected for production, in which, for example, by means of a heated roll highly accurate structures are impressed into the plastic.
  • glass preferably glass etching techniques or particularly preferably photopatternable glass can be used.
  • sintering techniques can be used.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Claims (10)

  1. Filtre résonnant (1) en silicium destiné à être employé dans la gamme des ondes micrométriques et millimétriques qui comprend :
    (a) une première couche (2) avec n cavités de résonance contiguës (4), où n est au moins 2, étant séparées les unes des autres par une cloison de séparation (8) ;
    (b) une deuxième couche (3) avec au moins n-1 cavités de couplage (5) ;
    caractérisé en ce que les cavités (4) de la première couche (2) sont conçues exclusivement comme cavités de résonance (4) et en ce que les cavités de la deuxième couche (3) sont conçuesexclusivement comme une/des cavité(s) de couplage (5), ouvertes sur un côté, et en ce que la deuxième couche (3) est disposée sur la première couche (2) de telle sorte que les cavités de résonance (4) individuelles de la première couche (2) sont interconnectées via la ou les cavités de couplage (5) de la deuxième couche (3), et en ce que le filtre (1) forme un composant monolithique.
  2. Filtre selon la revendication 1, comprenant en outre des dispositifs (6), (7) pour le couplage et le découplage du signal à filtrer sous forme de lignes microrubans.
  3. Filtre selon la revendication 1 ou 2, caractérisé en ce que les géométries de ses cavités de résonance (4) sont conçues pour une utilisation du filtre dans la gamme des ondes micrométriques à millimétriques.
  4. Filtre selon l'une quelconque des revendications 1 à 3, dans lequel au moins une des couches (2), (3) se compose, au lieu de silicium, d'un matériau appartenant au groupe comprenant le verre, le plastique et la céramique.
  5. Filtre selon l'une quelconque des revendications 1 à 4, caractérisé en ce que la première couche (2) présente une épaisseur de l'ordre de 1200 microns et la deuxième couche (3) une épaisseur de l'ordre de 200 microns.
  6. Filtre selon l'une quelconque des revendications 1 à 5, caractérisé en ce que dans une première couche (2) plus épaisse, il présente deux cavités de résonance (4) présentant une forme rectangulaire et une section trapézoïdale ainsi qu'une cloison de séparation (8) disposée de telle sorte qu'elle sépare les deux cavités de résonance (4), et en ce que, dans une deuxième couche (3) plus fine, il présente en outre une cavité de couplage (5) également rectangulaires mais plus petite présentant une section trapézoïdale dont les dimensions latérales sont au minimum telles que la cavité de couplage (5) est plus grande que l'épaisseur de la cloison de séparation (8) d'au minimum quelques microns, et en ce que la deuxième couche (3) et la première couche (2) sont superposables de telle sorte que la cavité de couplage (5), lorsqu'elle est disposée au-dessus de la cloison de séparation (8), dépasse cette dernière des deux côtés de façon symétrique dans la direction des cavités de résonance (4) de sorte à créer une interconnexion entre les deux cavités de résonance (4), et en ce qu'il présente en outre des dispositifs (6), (7) pour le couplage et le découplage sous forme de lignes microrubans disposés chacun sur la surface extérieure de la deuxième couche (3) et présentant une longueur telle que chaque ligne microruban se situe au moins en partie au-dessus de la cavité de résonance (4) correspondante se situant en-dessous.
  7. Procédé de fabrication d'un filtre résonnant (1) selon une méthode de fabrication microtechnique à partir d'une plaquette en silicium, le procédé comprenant les étapes suivantes :
    a) réalisation d'une première couche (2) ;
    b) masquage de la première couche (2) ;
    c) réalisation de cavités de résonance (4) par gravure de la première couche (2) ;
    d) réalisation d'une seconde couche (3) ;
    e) masquage de la seconde couche (3) ;
    f) réalisation d'une ou de plusieurs cavités de couplage (5) par gravure de la seconde couche (5) ;
    g) positionnement de la seconde couche (3) sur la première couche (2) de sorte que les cavités de résonance (4) soient interconnectées au moyen de la/des cavité(s) de couplage (5) ;
    h) liaison permanente des couches (2), (3) ainsi positionnées de sorte que l'espace de liaison soit hermétiquement étanche,
    où les cavités (4) de la première couche (2) sont conçues exclusivement comme des cavités de résonance (4), et celles de la deuxième couche (3) exclusivement comme une/des cavité(s) de couplage (5).
  8. Procédé selon la revendication 7 où l'étape c) est suivie de la métallisation de la première couche sur la face présentant les cavités de résonance.
  9. Procédé selon la revendication 7 ou 8 où que l'étape f) est suivie de la métallisation et de la structuration de la couche métallique sur les deux faces de la deuxième couche.
  10. Procédé selon les revendications 7 - 9 caractérisé en ce que les cavités (4), (5) sont réalisées par gravure KOH ou TMAH.
EP09730813A 2008-04-08 2009-04-07 Filtre à résonance à faibles pertes Not-in-force EP2266162B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008017967.1A DE102008017967B4 (de) 2008-04-08 2008-04-08 Resonanzfilter mit geringem Verlust
PCT/EP2009/002575 WO2009124730A1 (fr) 2008-04-08 2009-04-07 Filtre à résonance à faibles pertes

Publications (2)

Publication Number Publication Date
EP2266162A1 EP2266162A1 (fr) 2010-12-29
EP2266162B1 true EP2266162B1 (fr) 2011-11-23

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EP09730813A Not-in-force EP2266162B1 (fr) 2008-04-08 2009-04-07 Filtre à résonance à faibles pertes

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US (1) US8736403B2 (fr)
EP (1) EP2266162B1 (fr)
AT (1) ATE535040T1 (fr)
DE (1) DE102008017967B4 (fr)
WO (1) WO2009124730A1 (fr)

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US8823470B2 (en) 2010-05-17 2014-09-02 Cts Corporation Dielectric waveguide filter with structure and method for adjusting bandwidth
US9030278B2 (en) 2011-05-09 2015-05-12 Cts Corporation Tuned dielectric waveguide filter and method of tuning the same
US9130255B2 (en) 2011-05-09 2015-09-08 Cts Corporation Dielectric waveguide filter with direct coupling and alternative cross-coupling
US9030279B2 (en) 2011-05-09 2015-05-12 Cts Corporation Dielectric waveguide filter with direct coupling and alternative cross-coupling
US9130256B2 (en) 2011-05-09 2015-09-08 Cts Corporation Dielectric waveguide filter with direct coupling and alternative cross-coupling
US10116028B2 (en) 2011-12-03 2018-10-30 Cts Corporation RF dielectric waveguide duplexer filter module
US9130258B2 (en) 2013-09-23 2015-09-08 Cts Corporation Dielectric waveguide filter with direct coupling and alternative cross-coupling
US10050321B2 (en) 2011-12-03 2018-08-14 Cts Corporation Dielectric waveguide filter with direct coupling and alternative cross-coupling
US9466864B2 (en) 2014-04-10 2016-10-11 Cts Corporation RF duplexer filter module with waveguide filter assembly
US9583805B2 (en) 2011-12-03 2017-02-28 Cts Corporation RF filter assembly with mounting pins
US9666921B2 (en) 2011-12-03 2017-05-30 Cts Corporation Dielectric waveguide filter with cross-coupling RF signal transmission structure
US9178256B2 (en) 2012-04-19 2015-11-03 Qualcomm Mems Technologies, Inc. Isotropically-etched cavities for evanescent-mode electromagnetic-wave cavity resonators
US8884725B2 (en) 2012-04-19 2014-11-11 Qualcomm Mems Technologies, Inc. In-plane resonator structures for evanescent-mode electromagnetic-wave cavity resonators
US10483608B2 (en) 2015-04-09 2019-11-19 Cts Corporation RF dielectric waveguide duplexer filter module
US11081769B2 (en) 2015-04-09 2021-08-03 Cts Corporation RF dielectric waveguide duplexer filter module
KR20180092134A (ko) * 2017-02-08 2018-08-17 주식회사 만도 저주파 노이즈를 억제할 수 있는 구조를 갖는 레이더
US11437691B2 (en) 2019-06-26 2022-09-06 Cts Corporation Dielectric waveguide filter with trap resonator

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US5202648A (en) * 1991-12-09 1993-04-13 The Boeing Company Hermetic waveguide-to-microstrip transition module
US5821836A (en) * 1997-05-23 1998-10-13 The Regents Of The University Of Michigan Miniaturized filter assembly
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US7667557B2 (en) * 2005-12-06 2010-02-23 Tdk Corporation Thin-film bandpass filter using inductor-capacitor resonators

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Publication number Publication date
ATE535040T1 (de) 2011-12-15
DE102008017967B4 (de) 2015-03-12
DE102008017967A1 (de) 2009-10-15
US20110193657A1 (en) 2011-08-11
EP2266162A1 (fr) 2010-12-29
US8736403B2 (en) 2014-05-27
WO2009124730A1 (fr) 2009-10-15

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