EP2203928A1 - Source d'ions a plasma double - Google Patents

Source d'ions a plasma double

Info

Publication number
EP2203928A1
EP2203928A1 EP08842593A EP08842593A EP2203928A1 EP 2203928 A1 EP2203928 A1 EP 2203928A1 EP 08842593 A EP08842593 A EP 08842593A EP 08842593 A EP08842593 A EP 08842593A EP 2203928 A1 EP2203928 A1 EP 2203928A1
Authority
EP
European Patent Office
Prior art keywords
plasma
gas
plasma chamber
ion source
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08842593A
Other languages
German (de)
English (en)
Inventor
William Divergilio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of EP2203928A1 publication Critical patent/EP2203928A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/077—Electron guns using discharge in gases or vapours as electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06366—Gas discharge electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/082—Electron beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Definitions

  • the present invention relates generally to ion implantation systems, and more specifically to a system and method for utilizing a double plasma ion source for ion implantation.
  • ion implantation systems are used to impart dopant elements into semiconductor workpieces, display panels, glass substrates, and the like.
  • Typical ion implantation systems or ion implanters implant a workpiece with an ion beam of impurities in order to produce n-type and/or p-type doped regions, or to form passivation layers in the workpiece.
  • the ion implantation system injects a selected ion species into the workpiece to produce the desired extrinsic material properties.
  • dopant atoms or molecules are ionized and isolated, accelerated and/or decelerated, formed into a beam, and implanted into a workpiece.
  • the dopant ions physically bombard and enter the surface of the workpiece, and typically come to rest below the workpiece surface in the crystalline lattice structure thereof.
  • a typical ion implantation system is generally a collection of sophisticated subsystems, wherein each subsystem performs a specific action on the dopant ions.
  • Dopant elements can be introduced in gas form (e.g., a process gas) or in a solid form that is subsequently vaporized, wherein the dopant elements are positioned inside an ionization chamber and ionized by a suitable ionization process.
  • gas form e.g., a process gas
  • solid form that is subsequently vaporized
  • the ionization chamber is maintained at a low pressure (e.g., a vacuum), wherein a filament, for example is located within the ionization chamber and heated to a point where electrons are emitted from the filament.
  • Negatively-charged electrons from the filament are then attracted to an oppositely-charged anode within the chamber, wherein during the travel from the filament to the anode, the electrons collide with the dopant source elements (e.g., molecules or atoms), which results in the separation of electrons from the source gas material, thereby ionizing the source gas and creating a plasma, i.e., a plurality of positively charged ions and negatively charged electrons from the dopant source elements.
  • the positively charged ions are subsequently "extracted" from the chamber through an extraction slit or aperture via an extraction electrode, wherein the ions are generally directed along an ion beam path toward the workpiece.
  • IHC Indirectly Heated Cathode
  • the electron emitter is a cylindrical cathode, typically 10 mm in diameter and 5 mm thick, positioned within the ionization chamber.
  • This cathode is heated by an electron beam extracted from a filament located behind the cathode, thereby protected from the harsh environment of the ionization chamber.
  • An exemplary IHC ion source is shown, for example, in commonly assigned US Patent No. 5,497,006, among other patents.
  • the cathode heater power is typically on the order of a few hundred watts, and in the case of an IHC, typically on the order of one kilowatt.
  • typical maximum extracted ion beam currents are in the range of 50 to 100 mA, requiring discharge power (cathode voltage times cathode current) of hundreds of watts.
  • these cathode heater powers and discharge powers the walls of the ion source typically reach temperatures in excess of 400 degrees C. For operation with standard gases, these high wall temperatures are advantageous as condensation of phosphorus and arsenic on the walls is prevented, greatly reducing cross contamination when changing species.
  • the filament In the case of the Bernas source, where the filament is in contact with the gas, the filament is attacked by the borane and a stable discharge cannot be maintained. In the case of the IHC, the discharge is much more stable, but thermal dissociation of the large molecules is unacceptably high. Dissociation occurs both on the hot cathode and on the walls, which are difficult to maintain at low temperature due to the high radiative power of the cathode.
  • the present invention overcomes the limitations of the prior art by providing a two plasma or double plasma ion source system and method for efficiently operating an ion source that can utilize large molecules, such as decaborane and octadecaborane as well as standard implantation gases such as BF 3 , PH 3 and ASH 3 . Consequently, the following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an extensive overview of the invention. It is intended to neither identify key or critical elements of the invention nor delineate the scope of the invention. Its purpose is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later.
  • the present invention is directed generally toward an ion source for use in an ion implantation system, wherein the ion source incorporates two or more plasma chambers, such that the first plasma chamber is operative to generate electrons for injection into the second plasma chamber so that the second plasma chamber can efficiently and effectively generate ions for injection into an ion beam line of an ion implantation system.
  • an ion source comprising: a first plasma chamber, referred to hereinafter as the electron source plasma chamber, includes a plasma generating component for generating a plasma from the ionization of a first source gas; and a second plasma chamber, referred to hereinafter as the ion source plasma chamber, into which electrons from the electron source plasma chamber are injected, creating a plasma from a second source gas.
  • the ion source can include a high voltage extraction system including an electrode system configured to extract ions from the ion source plasma chamber via an extraction aperture formed therein.
  • a method for ion generation comprising: forming an electron source plasma in a first plasma chamber; extracting electrons from the plasma formed in the first plasma generating chamber; so as to direct the extracted electrons into a second plasma chamber, whereby the extracted electrons generating a plasma within the second plasma chamber; and extracting ions through a extraction aperture located in the second plasma chamber.
  • an ion implantation system including an ion source for injecting ions into an ion beamline for implantation into a workpiece, the ion source including: a first plasma chamber, (the electron source plasma chamber) for generating a plasma from ionization of a first source gas; and a second plasma chamber (the ion source plasma chamber, into which electrons from the electron source plasma chamber are injected, for generating a plasma from a second source gas.
  • the ion implantation system includes an extraction system including an electrode configured to extract ions from the ion source plasma chamber via an extraction aperture formed therein.
  • FIG. 1 illustrates an isometric perspective view of an exemplary ion source in accordance with one aspect of the present invention
  • FIG. 2 illustrates a cross sectional perspective view of an exemplary ion source in accordance with one aspect of the present invention
  • FIG. 3 is a block diagram of an exemplary method for creating and extracting ions from an ion source according to another exemplary aspect of the invention
  • FIG. 4 is a schematic of an exemplary ion implantation system utilizing an exemplary ion source according to another aspect of the present invention.
  • the present invention is directed generally towards an improved ion source apparatus used in ion implantation. More particularly, the system and methods of the present invention provide an efficient way to ionize large molecule ionization gases for the production of molecular ion implantation species, such as, for example: carborane; decaborane; octadecaborane and icosaboranes, as well as standard ionization gases for the production of monomer ion implant species, such as boron trifluoride, phosphine and arsine.
  • molecular ion implantation species such as, for example: carborane; decaborane; octadecaborane and icosaboranes
  • monomer ion implant species such as boron trifluoride, phosphine and arsine.
  • FIGS. 1 and 2 illustrate a simplified exemplary ion source 100 in accordance with the present invention, wherein the ion source 100 is suitable for implementing one or more aspects of the present invention.
  • the ion source 100 depicted in FIG. 1 is provided for illustrative purposes and is not intended to include all aspects, components, and features of an ion source. Instead, the exemplary ion source 100 is depicted so as to facilitate a further understanding of the present invention.
  • the ion source 100 for example, comprises a first plasma chamber 102 situated adjacent a second plasma chamber 116.
  • the first plasma chamber 102 includes a gas source supply line 106 and is a configured with a plasma generating component 104 for creating a plasma from a first source gas.
  • a source gas is introduced into the first plasma chamber 102 by a gas supply line 106.
  • the source gas can comprise at least one of the following: inert gases such as argon (Ar) and xenon (Xe), standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (AsHb) and phosphene (PHU), and reactive gases such as oxygen (O 2 ) and nitrogen trifluoride (NF 3 ).
  • inert gases such as argon (Ar) and xenon (Xe)
  • standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (AsHb) and phosphen
  • the plasma generating component 104 can comprise a cathode 108/anode110 combination, wherein the cathode 108 may include a simple Bernas-type filament configuration, or an indirectly heated cathode of the type illustrated in FIGS. 1 and 2.
  • the plasma generating component 104 may include an RF induction coil antenna that is supported having a radio frequency conducting segment mounted directly within a gas confinement chamber to deliver ionizing energy into the gas ionization zone, for example, as disclosed in commonly assigned US Patent No. 5,661 ,308.
  • the first, or electron source, plasma chamber 102 defines an aperture 112 forming a passageway into a high vacuum region of an ion implantation system, i.e. a region wherein pressure is much lower than the pressure of the source gas in the first plasma chamber 102.
  • the aperture 112 provides a pumping aperture for maintaining source gas purity at a high level, as will be further discussed hereinbelow.
  • the electron source plasma chamber 102 also defines an aperture 114 forming an extraction aperture for extracting electrons from the electron source plasma chamber 102.
  • the extraction aperture 114 is provided in the form of a replaceable anode element 110 as illustrated in FIG. 2, having an aperture 114 formed therein.
  • the electron source plasma chamber 102 can be configured to have a positively biased electrode 119 (relative to the cathode 108) for attracting electrons from the plasma in a so-called non-reflex mode.
  • the electrode 119 can be biased negatively relative to the cathode 108 to cause electrons to be repelled back into the electron source plasma chamber 102 in a so-called reflex mode. It will be understood that this reflex mode configuration would require proper biasing of the plasma chamber walls, together with electrical insulation and independent biasing of the electrode 119.
  • the ion source 100 of the present invention also includes a second, or ion source chamber 116.
  • the second ion source plasma chamber 116 includes a second gas source supply line 118 for introducing a source gas into the ion source plasma chamber 116 and is further configured to receive electrons from the electron source plasma chamber 102, thereby creating plasma therein via the collisions between the electrons and the second source gas.
  • the second source gas can comprise any of the gases listed above for the electron source plasma chamber 102 or any large molecule gases such as carborane (C2B10H12), decaborane (BIOHH), and octadecaborane (B18H 22 ) or an icosadecaborane.
  • the second, or ion source, plasma chamber 116 defines an aperture 117 aligned with the extraction aperture 114 of the first plasma chamber 102, forming a passageway therebetween for permitting electrons extracted from the first plasma chamber 102 to flow into the second plasma chamber 116.
  • the ion source plasma chamber 116 is configured to have a positively biased electrode 119 for attracting electrons injected into the ion source plasma chamber 116 in a so-called non-reflex mode to create the desired collisions between electrons and gas molecules to create ionization plasma.
  • the electrode 119 can be biased negatively to cause electrons to be repelled back into the ion source plasma chamber 116 in a so-called reflex mode.
  • An extraction aperture 120 is configured in the second plasma chamber 116 to extract ions for formation of an ion beam for implantation in the usual manner.
  • the second plasma chamber 116 is preferably biased positively with respect to the first plasma chamber 102 utilizing an external bias power supply 115. Electrons are thus extracted from the electron source plasma chamber 102 and injected into the ion source plasma chamber 116 where collisions are induced in the second plasma chamber 116 between the electrons provided by the first plasma chamber 102 and the supply gas supplied to the second plasma chamber 116 via the second gas source supply line 118, to create a plasma.
  • first plasma chamber 102 and the second plasma chamber 116 can have three open boundaries: a gas inlet (e.g., a first gas supply inlet 122 and a second gas supply inlet 124), an opening to a high vacuum area (e.g., pumping aperture 112 and extraction aperture 120) and a common boundary apertures 114 and 117 forming the common passageway between the first and second plasma chambers, 102 and 104, respectively.
  • a gas inlet e.g., a first gas supply inlet 122 and a second gas supply inlet 124
  • an opening to a high vacuum area e.g., pumping aperture 112 and extraction aperture 120
  • a common boundary apertures 114 and 117 forming the common passageway between the first and second plasma chambers, 102 and 104, respectively.
  • the area of the common boundary apertures 114 and 117 is kept small compared to the apertures 112 and 120 into the high vacuum region, i.e. first plasma chamber aperture 112 and second plasma chamber aperture 120 for reasons
  • the ion source of the present invention comprises components of a standard IHC ion source of the type manufactured and sold by Axcelis Technologies, of Beverly, MA, wherein the ion source plasma chamber includes a standard arc chamber, configured with a standard anode, extraction system and source feed tube.
  • the internally heated cathode element of the standard IHC source is removed and replaced with a small electron source plasma chamber mounted in its place, which contains components similar to a standard IHC ion source of the type manufactured and sold by Axcelis Technologies, including an arc chamber, a standard internally heated cathode element and a source feed tube.
  • Both plasma chambers also share a magnetic field oriented along the extraction aperture, provided by a standard Axcelis source magnet, depicted by reference numeral 130.
  • a standard Axcelis source magnet depicted by reference numeral 130.
  • electromagnet members 130 are positioned outside of the first and second plasma chambers, 102 and 116 respectively, preferably along the axis of the shared boundary therebetween. These electromagnet elements 130 induce a magnetic field that traps the electrons to improve the efficiency of the ionization process.
  • the electron source chamber 102 is preferably thermally isolated from the ion source plasma chamber 116 via an insulative member 126 positioned therebetween, with the only power coupled to the ion source plasma chamber 116 being a small amount of radiative power, typically on the order of 10W, provided from the cathode 108 through the common boundary aperture formed by apertures 114, 117, and the discharge power associated with the electron current injected into the ion source plasma chamber 166, typically 10W for a decaborane or octadecaborane discharge.
  • the low amount of power coupled to the ion source plasma chamber 116 facilitates maintaining the wall temperatures low enough to prevent dissociation of large molecule gases.
  • the electron source chamber 102 is electrically isolated from the ion source plasma chamber 116 by the insulative member 126.
  • the ion source plasma chamber 116 is configured with an extraction aperture 120 having an area of approximately 300mm 2 (5mmX60mm).
  • the electron source chamber 102 is also configured with a pumping aperture 112 of total area 300mm 2 .
  • the common boundary aperture formed by apertures 114 and 117 shared by the two plasma chambers preferably has an area on the order of 30mm 2 (4X7.5mm).
  • argon discharge currents and voltages in the electron source chamber 102 on the order of typically 0.2A @ 4Ov have yielded 0.1 A electron current injected into the ion source plasma chamber 116 (with a voltage setting of 100V on the bias power supply 115).
  • switching to phosphene as a gas source in the ion source plasma chamber 116, increasing the electron source plasma discharge parameters to 5A @ 60V enables the electron current injected into the ion source plasma to increase to 3A at a setting of 120V on the bias supply, with ion beam currents in excess of 5OmA extracted through the extraction aperture 120.
  • the choice of the areas of the electron source plasma chamber pumping aperture 112 and ion source plasma chamber extraction aperture 120 is preferably large compared to the common boundary aperture created by apertures 114 and 117, which results in relatively high gas purity in each chamber, 102 and 116.
  • argon flows into the ion source plasma chamber 116 through the 30mm 2 common extraction aperture 114 and out through the 300mm2 extraction aperture 120.
  • argon density in the ion source plasma chamber 116 is only 10% of that in the electron source plasma chamber 102.
  • the density of the second gas, supplied to the ion source plasma chamber 116 via gas supply line 118, which can flow into the electron source plasma chamber 102, is only 10% of that in the ion source plasma chamber 116.
  • argon density in the electron source plasma chamber 102 and second gas density in the ion source plasma chamber 116 are approximately equal such that each plasma chamber gas is about 90% pure.
  • the inventor has recognized that the formation of molecular ion species such as decaborane (B- I OH-H) or octadecaborane ions within a second plasma chamber 116 utilizing electrons from the first plasma chamber 102 can avoid the typical ion source contamination problems associated with a cathode, for example, while the power dissipation attributes of such hardware can enable a wide range of electron current ionization applications typically associated with molecular species ionization, as well as high electron current ionization applications typically associated with monomer species ionization.
  • molecular ion species such as decaborane (B- I OH-H) or octadecaborane ions within a second plasma chamber 116 utilizing electrons from the first plasma chamber 102
  • the power dissipation attributes of such hardware can enable a wide range of electron current ionization applications typically associated with molecular species ionization, as well as high electron current ionization applications typically associated
  • the method 200 in accordance with the present invention begins at 202 by supplying a first gas through the gas supply line 106 to the first plasma chamber 102 that is in a vacuum condition (see FIG. 1 ) and a second gas through the second gas source supply line 118 to the second plasma chamber 116 that is also in a vacuum state (see FIG. 1 ).
  • the ion source 100 (FIG. 1 ), for example, comprises the first plasma chamber 102 containing the first gas configured with a plasma generating component 104 (FIG. 1 ) for producing a plasma from the first gas.
  • a plasma generating component 104 (see FIG. 1 ) is energized to create a plasma in the first plasma chamber 102 (see Fig. 1 ) from interaction of the plasma generating component 104 and the first source gas (e.g., argon).
  • the plasma may be created by a DC discharge with a discharge current of 0.4 milliamps and a discharge voltage of 60 volts.
  • electrons are extracted from the plasma created in the first plasma chamber 102 (see FIG. 1 ) and injected into the second plasma chamber 116 (see FIG.
  • the present invention describes a "double plasma ion source.” It will be understood that this double plasma ion source described can be incorporated for use into an ion implantation system, as illustrated in the exemplary ion implantation system 300 of FIG. 4.
  • the ion implantation apparatus 300 (also referred to as an ion implanter) is operably coupled to a controller 302 for controlling the various operations and processes implemented on the ion implantation apparatus 300.
  • the ion implantation apparatus 300 includes the double plasma ion source assembly 306 described hereinabove for producing a quantity of ions for generating an ion beam 308 traveling along an ion beam path P 1 for implantation of the ions to a workpiece 310 (e.g., a semiconductor workpiece, display panel, etc.) held on a workpiece support platen 312.
  • a workpiece 310 e.g., a semiconductor workpiece, display panel, etc.
  • the ions can be formed from inert gases such as argon (Ar) and xenon (Xe) 1 standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (ASH 3 ) and phosphene (PH 3 ), reactive gases such as oxygen (O2) and nitrogen trifluoride (NF 3 ), and large molecule gases such as decaborane (B10H14), and octadecaborane (Bi 8 H 22 )-
  • inert gases such as argon (Ar) and xenon (Xe) 1 standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (ASH 3 ) and phosphene (PH 3 ), reactive gases such as oxygen (O2) and nitrogen trifluoride (NF 3 ), and large molecule gases such as decaborane (B10H14), and octadecaborane (Bi 8 H 22 )-
  • the ion source assembly 306, comprises a first plasma chamber 314 (e.g., a plasma chamber or arc chamber) and a second plasma chamber 316, wherein the first plasma chamber 314 is configured with a plasma generating component 318, which can include a cathode 108 (see FIG. 2) and an anode 110 (see FIG. 2) for generating a plasma from a first gas introduced into the first plasma chamber 314 via a first gas feed line 322 from a first gas supply 301.
  • the plasma generating component 318 can in the alternative comprise an RF induction coil, for example.
  • the first gas can comprise at least one of the following: inert gases such as argon (Ar) and xenon (Xe), standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (AsH 3 ) and phosphene (PH 3 ), and reactive gases such as oxygen (O 2 ) and nitrogen trifluoride (NF 3 ).
  • a second plasma chamber 316 is situated in fluid communication with the first plasma chamber 314 via a common boundary aperture 326 formed between the first and second plasma chambers, 314 and 316, wherein the second plasma chamber 316 contains a second gas introduced by a second gas feed line 328 from a second gas supply 320.
  • the second gas can comprise at least one of the following: inert gases such as argon (Ar) and xenon (Xe), standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (AsH 3 ) and phosphene (PH 3 ), reactive gases such as oxygen (O 2 ) and nitrogen trifluoride (NF 3 ), and large molecule gases such as decaborane (B 10 Hi4), and octadecaborane (B 18 H 22 ).
  • inert gases such as argon (Ar) and xenon (Xe)
  • standard ion implantation gases such as boron trifluoride (BF 3 ), arsene (AsH 3 ) and phosphene (PH 3 )
  • reactive gases such as oxygen (O 2 ) and nitrogen trifluoride (NF 3 )
  • large molecule gases such as decaborane (B 10 Hi4), and octadecabor
  • the second plasma chamber 316 is preferably biased positive with respect to the first plasma chamber 314 by a bias power supply 332, enabling the extraction of electrons from the first plasma chamber 314 for injection into the second plasma chamber 316.
  • a bias power supply 332 enabling the extraction of electrons from the first plasma chamber 314 for injection into the second plasma chamber 316.
  • the extracted electrons collide with the second gas in the second plasma chamber 316 they create a plasma in the second plasma chamber 316.
  • An extraction aperture 334 is provided in the second plasma chamber 316 to extract ions from the plasma formed therein the second plasma chamber 316.
  • the ion implantation system 300 further comprises an extraction electrode assembly 331 associated with source assembly 306, wherein the extraction electrode assembly 331 is biased to attract charged ions from the source assembly 306 for extraction through the extraction aperture.
  • a beamline assembly 336 is further provided downstream of the ion source assembly 306, wherein the beamline assembly 336 generally receives the charged ions from the source 306.
  • the beam line assembly 336 for example, comprises a beam guide 342, a mass analyzer 338, and a resolving aperture 340, wherein the beam line assembly 336 is operable to transport the ions along the ion beam path P for implantation into workpiece 310.
  • the mass analyzer 338 further comprises a field generating component, such as a magnet (not shown), wherein the mass analyzer 338 generally provides a magnetic field across the ion beam 308, thus deflecting ions from the ion beam 308 at varying trajectories according to a charge to mass ratio associated with the ions extracted from the source 306.
  • a field generating component such as a magnet (not shown)
  • the mass analyzer 338 generally provides a magnetic field across the ion beam 308, thus deflecting ions from the ion beam 308 at varying trajectories according to a charge to mass ratio associated with the ions extracted from the source 306.
  • ions traveling through the magnetic field experience a force that directs individual ions of a desired charge to mass ratio along the beam path P and deflects ions of undesired charge to mass ratios away from the beam path P.
  • the ion beam 308 is directed though a resolving aperture 340, wherein the ion beam 308 may be accelerated, decelerated, focused or otherwise modified for implantation into the workpiece 310 positioned within an end station 344.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

L'invention porte sur une source d'ions 100, incluant une première chambre de plasma 102 incluant un composant générateur de plasma 104 et une première entrée de gaz 122 pour recevoir un premier gaz, de sorte que ledit composant générateur de plasma 104 et ledit premier gaz interagissent pour générer un premier plasma à l'intérieur de ladite première chambre de plasma 102, ladite première chambre de plasma 102 définissant en outre une ouverture 114 pour extraire des électrons à partir dudit premier plasma, et une seconde chambre de plasma 116 comportant une seconde entrée de gaz 118 pour recevoir un second gaz, ladite seconde chambre de plasma 116 définissant en outre une ouverture 117 pratiquement alignée avec l'ouverture 112 de ladite première chambre de plasma 102, pour recevoir des électrons extraits de celle-ci, de telle sorte que les électrons et le second gaz interagissent pour générer un second plasma à l'intérieur de ladite seconde chambre de plasma 116, ladite seconde chambre de plasma 116 définissant en outre une ouverture d'extraction 120 pour extraire des ions à partir dudit second plasma.
EP08842593A 2007-10-22 2008-10-22 Source d'ions a plasma double Withdrawn EP2203928A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98157607P 2007-10-22 2007-10-22
PCT/US2008/012008 WO2009054966A1 (fr) 2007-10-22 2008-10-22 Source d'ions à plasma double

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EP2203928A1 true EP2203928A1 (fr) 2010-07-07

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EP (1) EP2203928A1 (fr)
JP (1) JP5524070B2 (fr)
KR (1) KR101562785B1 (fr)
CN (1) CN101903970A (fr)
WO (1) WO2009054966A1 (fr)

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JP5524070B2 (ja) 2014-06-18
KR20100100823A (ko) 2010-09-15
JP2011501382A (ja) 2011-01-06
CN101903970A (zh) 2010-12-01
KR101562785B1 (ko) 2015-10-23

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