EP2150634A1 - Method for controlling process gas concentration - Google Patents

Method for controlling process gas concentration

Info

Publication number
EP2150634A1
EP2150634A1 EP08750339A EP08750339A EP2150634A1 EP 2150634 A1 EP2150634 A1 EP 2150634A1 EP 08750339 A EP08750339 A EP 08750339A EP 08750339 A EP08750339 A EP 08750339A EP 2150634 A1 EP2150634 A1 EP 2150634A1
Authority
EP
European Patent Office
Prior art keywords
bubbler
carrier gas
concentration
medium
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08750339A
Other languages
German (de)
French (fr)
Inventor
Hans Ulrich Völler
Rolf Müller
Robert Michael Hartung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Thermal Solutions GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Thermal Solutions GmbH and Co KG filed Critical Centrotherm Thermal Solutions GmbH and Co KG
Publication of EP2150634A1 publication Critical patent/EP2150634A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to a method for controlling the process gas concentration for the treatment of substrates in a process space, in which a liquid is vaporized by means of hin miceite- ter bubbles of a carrier gas in a bubbler.
  • bubblers which mainly consist of a closed container into which the liquid to be evaporated has been introduced.
  • the liquids to be evaporated may be of any type, e.g. an acid with a given concentration.
  • the liquid may be formic acid (HCOOH) in different concentrations.
  • a carrier gas is introduced into the lowermost region of the container via a nozzle rod having a multiplicity of openings. Suitable carrier gases are, for example, N2, N2H2, H2, etc., or else inert gases.
  • the carrier gas then rises bubble-shaped in the bubbler through the liquid and takes parts of the liquid in vapor form. This resulting carrier gas / vapor mixture is then supplied from the container to the process room.
  • the gas bubbles absorb the vaporized medium until a relative humidity of 100% is reached.
  • concentration here depends on the pressure in the bubbler and the temperature, which may also be at room temperature.
  • the pressure is controlled by a pressure reducer.
  • the invention is based on the object of providing an easy-to-implement method for controlling the process gas concentration.
  • the object underlying the invention is achieved in a method of the type mentioned by establishing a predetermined constant internal pressure in the bubbler and subsequent introduction of the carrier gas in the bubbler with simultaneous temperature control of the medium to be evaporated within the bubbler for setting a predetermined vapor pressure.
  • This surprisingly easy to implement method allows precise control of the concentration of the vaporized medium in the carrier gas.
  • the temperature in the bubbler for adjusting the concentration of the medium in the carrier gas to different process conditions without interrupting the supply of the carrier gas in the bubbler is changed continuously.
  • the associated drawing figure shows a schematic representation of a bubbler for carrying out the inventive Procedure.
  • the bubbler 1 consists of a closable container which is surrounded by a cooling / heating jacket 2.
  • the bubbler 1 is connected to a supply 3 for a carrier gas, which ends inside the bubbler 1 in the bottom area in a nozzle bar 4 which is provided with a plurality of nozzles for generating gas bubbles.
  • the rising gas bubbles are shown schematically as arrows 5. These gas bubbles rise through the introduced into the bubbler 1 liquid medium 6 and are then passed through a piping 7 in a process space, not shown.
  • the cooling / heating jacket 2 is connected to a cooling / heating device 8 for temperature control of the liquid medium 6 in the bubbler 1.
  • a pressure reducer 9 with which the pressure in the bubbler 1 can be kept constant at a predetermined value.
  • N2, N2H2, H2 is used as the carrier gas.
  • the invention is equally feasible with other carrier gases.
  • formic acid (HCOOH) is used as a reducing medium for oxide layers, e.g. used on surfaces to be soldered together.
  • the control of the concentration of the evaporated medium 6 in the carrier gas by adjusting a predetermined / pre-calculated temperature by means of the cooling / heating device 8 at a constant pressure in the bubbler.
  • the temperature in the bubbler 1 can be at constant pressure in the bubbler 1, the vapor pressure of the medium change continuously.
  • the concentration of the vaporized medium in the carrier gas in a wide range can be controlled in a particularly simple manner, thereby simultaneously a simple process optimization in the Treatment of substrates is made possible.
  • the term substrate should also be understood to mean objects or surfaces to be soldered together.
  • the piping 7 can additionally be provided with a pipe tracing heater 10 up to the feed point into the process space.
  • This pipe trace heating 10 is connected to the cooling / heating device 8, so that the temperature of the piping can be set to the same temperature as in the bubbler 1.
  • the method according to the invention can advantageously be used for reflow soldering processes in a reflow soldering furnace, not shown, in which formic acid is introduced into the process space at a predetermined concentration.
  • the formic acid serves as a reducing medium for oxide layers on the partners to be soldered together.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention relates to a method for controlling the process gas concentration for the treatment of substrates in a process chamber, wherein a liquid is evaporated in a bubbler by means of the bubbles of a carrier gas that are guided through. The aim of the invention is to create a method for controlling the process gas concentration that is easy to implement. Said aim is achieved by the production of a predetermined constant interior pressure within the bubbler, and subsequent introduction of a carrier gas into the bubbler while at the same time controlling the temperature of the medium to be evaporated within the bubbler in order to set a predetermined vapor pressure.

Description

Verfahren zur Steuerung der Prozessgaskonzentration Method for controlling the process gas concentration
Die Erfindung betrifft ein Verfahren zur Steuerung der Prozessgaskonzentration für die Behandlung von Substraten in einem Prozessraum, bei dem eine Flüssigkeit mittels hindurchgeleite- ter Bläschen eines Trägergases in einem Bubbler verdampft wird.The invention relates to a method for controlling the process gas concentration for the treatment of substrates in a process space, in which a liquid is vaporized by means of hindurchgeleite- ter bubbles of a carrier gas in a bubbler.
Für die Erzeugung von dampfförmigen Prozessgasen werden so genannte Bubbler eingesetzt, die hauptsächlich aus einem geschlossenen Behälter bestehen, in den die zu verdampfende Flüssigkeit eingebracht worden ist. Die zu verdampfenden Flüssig- keiten können beliebiger Art sein, wie z.B. eine Säure mit einer vorgegebenen Konzentration. So kann die Flüssigkeit beispielsweise Ameisensäure (HCOOH) in unterschiedlicher Konzentration sein. Für den eigentlichen Verdampfungsprozess wird über einen Düsenstab mit einer Vielzahl von Öffnungen ein Trä- gergas im untersten Bereich des Behälters eingebracht. Als Trägergase kommen beispielsweise N2, N2H2, H2 usw., oder auch Inertgase in Betracht. Das Trägergas steigt darauf hin im Bubbler durch die Flüssigkeit blasenförmig auf und nimmt Teile der Flüssigkeit in Dampfform mit. Dieses dabei entstandene Trägergas-/Dampfgemisch wird dann aus dem Behälter dem Prozessraum zugeführt.For the production of vaporized process gases so-called bubblers are used, which mainly consist of a closed container into which the liquid to be evaporated has been introduced. The liquids to be evaporated may be of any type, e.g. an acid with a given concentration. For example, the liquid may be formic acid (HCOOH) in different concentrations. For the actual evaporation process, a carrier gas is introduced into the lowermost region of the container via a nozzle rod having a multiplicity of openings. Suitable carrier gases are, for example, N2, N2H2, H2, etc., or else inert gases. The carrier gas then rises bubble-shaped in the bubbler through the liquid and takes parts of the liquid in vapor form. This resulting carrier gas / vapor mixture is then supplied from the container to the process room.
Bei diesem Vorgang nehmen die Gasblasen das verdampfte Medium so weit auf, bis eine relative Feuchtigkeit von 100 % erreicht ist. Die Konzentration ist hierbei vom Druck im Bubbler sowie der Temperatur abhängig, die auch bei Raumtemperatur liegen kann. Die Druckregelung erfolgt dabei über einen Druckminderer.In this process, the gas bubbles absorb the vaporized medium until a relative humidity of 100% is reached. The concentration here depends on the pressure in the bubbler and the temperature, which may also be at room temperature. The pressure is controlled by a pressure reducer.
Bei der Behandlung von Substraten in einem Prozessraum kann die Einhaltung einer vorgegebenen Konzentration eines Mediums in einem Trägergas von entscheidender Bedeutung für die Qualität des Prozesses sein. Von Nachteil ist hier, dass bei einer Abkühlung eines Gasgemisches mit einer relativen Feuchte von 100 % eine Kondensation nicht verhindert werden kann. Im Ergebnis verringert sich die Konzentration des Mediums im Trägergas, was gleichzeitig zu ungewollten Effekten im Prozess führen kann .When treating substrates in a process space, maintaining a given concentration of a medium in a carrier gas can be critical to quality be the process. The disadvantage here is that with a cooling of a gas mixture with a relative humidity of 100% condensation can not be prevented. As a result, the concentration of the medium in the carrier gas decreases, which at the same time can lead to unwanted effects in the process.
Der Erfindung liegt nunmehr die Aufgabe zugrunde, ein einfach zu realisierendes Verfahren zur Steuerung der Prozessgaskonzentration zu schaffen.The invention is based on the object of providing an easy-to-implement method for controlling the process gas concentration.
Die der Erfindung zugrunde liegende Aufgabe wird bei einem Verfahren der eingangs genannten Art gelöst durch das Herstellen eines vorgegebenen konstanten Innendruckes im Bubbler und nachfolgendes Einleiten des Trägergases in den Bubbler bei gleichzeitiger Temperaturregelung des zu verdampfenden Mediums innerhalb des Bubblers zur Einstellung eines vorgegebenen Dampfdrucks .The object underlying the invention is achieved in a method of the type mentioned by establishing a predetermined constant internal pressure in the bubbler and subsequent introduction of the carrier gas in the bubbler with simultaneous temperature control of the medium to be evaporated within the bubbler for setting a predetermined vapor pressure.
Dieses überraschend einfach zu realisierende Verfahren erlaubt eine präzise Steuerung der Konzentration des verdampften Mediums im Trägergas .This surprisingly easy to implement method allows precise control of the concentration of the vaporized medium in the carrier gas.
In einer Ausgestaltung der Erfindung wird die Temperatur im Bubbler zur Anpassung der Konzentration des Mediums im Trägergas an unterschiedliche Prozessbedingungen ohne Unterbrechung der Zuführung des Trägergases in den Bubbler kontinuierlich geändert .In one embodiment of the invention, the temperature in the bubbler for adjusting the concentration of the medium in the carrier gas to different process conditions without interrupting the supply of the carrier gas in the bubbler is changed continuously.
In einer Fortführung der Erfindung ist vorgesehen, dass die Verrohrung vom Bubbler zum Prozessraum in die Temperaturregelung einbezogen wird, wobei die Verrohrung bevorzugt auf die gleiche Temperatur wie im Bubbler geregelt wird.In a continuation of the invention, provision is made for the piping from the bubbler to the process space to be included in the temperature control, wherein the piping is preferably regulated to the same temperature as in the bubbler.
Die Erfindung wird nachfolgend an einem Ausführungsbeispiel näher erläutert.The invention will be explained in more detail using an exemplary embodiment.
Die zugehörige Zeichnungsfigur zeigt eine schematische Darstellung eines Bubblers zur Durchführung des erfindungsgemäßen Verfahrens .The associated drawing figure shows a schematic representation of a bubbler for carrying out the inventive Procedure.
Der Bubbler 1 besteht aus einem verschließbaren Behälter, der mit einem Kühl-/Heizmantel 2 umgeben ist. Für die Erzeugung des Verdampfungsprozesses ist der Bubbler 1 mit einer Zuführung 3 für ein Trägergas verbunden, die innen im Bubbler 1 im Bodenbereich in einem Düsenstab 4 endet, der mit einer Vielzahl von Düsen zur Erzeugung von Gasblasen versehen ist. In der Zeichnungsfigur sind die aufsteigenden Gasblasen schematisch als Pfeile 5 dargestellt. Diese Gasblasen steigen durch das in den Bubbler 1 eingebrachte flüssige Medium 6 auf und werden dann über eine Verrohrung 7 in einen nicht dargestellten Prozessraum geleitet .The bubbler 1 consists of a closable container which is surrounded by a cooling / heating jacket 2. For the generation of the evaporation process, the bubbler 1 is connected to a supply 3 for a carrier gas, which ends inside the bubbler 1 in the bottom area in a nozzle bar 4 which is provided with a plurality of nozzles for generating gas bubbles. In the drawing figure, the rising gas bubbles are shown schematically as arrows 5. These gas bubbles rise through the introduced into the bubbler 1 liquid medium 6 and are then passed through a piping 7 in a process space, not shown.
Der Kühl-/Heizmantel 2 ist mit einer Kühl-/Heizeinrichtung 8 zur Temperaturregelung des flüssigen Mediums 6 im Bubbler 1 verbunden.The cooling / heating jacket 2 is connected to a cooling / heating device 8 for temperature control of the liquid medium 6 in the bubbler 1.
Weiterhin befindet sich in der Zuführung 3 für das Trägergas ein Druckminderer 9, mit dem der Druck im Bubbler 1 auf einem vorgegebenen Wert konstant gehalten werden kann.Further, in the feed 3 for the carrier gas, a pressure reducer 9, with which the pressure in the bubbler 1 can be kept constant at a predetermined value.
Im vorliegenden Ausführungsbeispiel wird als Trägergas N2, N2H2, H2 eingesetzt. Selbstverständlich ist die Erfindung auch mit anderen Trägergasen gleichermaßen realisierbar. Als flüssiges Medium wird hier Ameisensäure (HCOOH) als Reduktionsmedium für Oxidschichten z.B. auf miteinander zu verlötenden Oberflächen verwendet.In the present embodiment, N2, N2H2, H2 is used as the carrier gas. Of course, the invention is equally feasible with other carrier gases. As the liquid medium, formic acid (HCOOH) is used as a reducing medium for oxide layers, e.g. used on surfaces to be soldered together.
Die Steuerung der Konzentration des verdampften Mediums 6 im Trägergas erfolgt durch Einstellung einer vorgegebenen/vor berechneten Temperatur mittels der Kühl-/Heizeinrichtung 8 bei konstantem Druck im Bubbler. Durch Änderung der Temperatur im Bubbler 1 lässt sich bei konstantem Druck im Bubbler 1 der Dampfdruck des Mediums kontinuierlich verändern. Damit lässt sich die Konzentration des verdampften Mediums im Trägergas in einem weiten Bereich auf besonders einfache Weise steuern, wodurch gleichzeitig eine einfache Prozessoptimierung bei der Behandlung von Substraten ermöglicht wird. Unter den Begriff Substrat sollen beispielsweise auch miteinander zu verlötende Gegenstände oder Oberflächen verstanden werden.The control of the concentration of the evaporated medium 6 in the carrier gas by adjusting a predetermined / pre-calculated temperature by means of the cooling / heating device 8 at a constant pressure in the bubbler. By changing the temperature in the bubbler 1 can be at constant pressure in the bubbler 1, the vapor pressure of the medium change continuously. Thus, the concentration of the vaporized medium in the carrier gas in a wide range can be controlled in a particularly simple manner, thereby simultaneously a simple process optimization in the Treatment of substrates is made possible. For example, the term substrate should also be understood to mean objects or surfaces to be soldered together.
Um sicher zu stellen, dass sich die Konzentration nicht verän- dert, kann die Verrohrung 7 zusätzlich mit einer Rohrbegleitheizung 10 bis zum Einspeisepunkt in den Prozessraum versehen werden. Diese Rohrbegleitheizung 10 ist mit der Kühl/- Heizeinrichtung 8 verbunden, so dass die Temperatur der Verrohrung auf die gleiche Temperatur wie im Bubbler 1 eingestellt werden kann.In order to ensure that the concentration does not change, the piping 7 can additionally be provided with a pipe tracing heater 10 up to the feed point into the process space. This pipe trace heating 10 is connected to the cooling / heating device 8, so that the temperature of the piping can be set to the same temperature as in the bubbler 1.
Das erfindungsgemäße Verfahren kann vorteilhaft für Reflow- lötprozesse in einem nicht dargestellten Reflowlötofen eingesetzt werden, indem Ameisensäure in einer vorgegebenen Konzentration in den Prozessraum eingeleitet wird. Die Ameisensäure dient hierbei als Reduktionsmedium für Oxidschichten auf den miteinander zu verlötenden Partnern. The method according to the invention can advantageously be used for reflow soldering processes in a reflow soldering furnace, not shown, in which formic acid is introduced into the process space at a predetermined concentration. The formic acid serves as a reducing medium for oxide layers on the partners to be soldered together.
Verfahren zur Steuerung der ProzessgaskonzentrationMethod for controlling the process gas concentration
BezugszeichenlisteLIST OF REFERENCE NUMBERS
1 Bubbler1 bubbler
2 Kühl-/Heizmantel2 cooling / heating jacket
3 Zuführung3 feeder
4 Düsenstab4 nozzle rod
5 Pfeil5 arrow
6 flüssiges Medium6 liquid medium
7 Verrohrung7 piping
8 Kühl-/Heizeinrichtung8 cooling / heating device
9 Druckminderer9 pressure reducer
10 Rohrbegleitheizung 10 pipe trace heating

Claims

Verfahren zur Steuerung der ProzessgaskonzentrationPatentansprüche Method for controlling the process gas concentration Patent claims
1. Verfahren zur Steuerung der Prozessgaskonzentration für die Behandlung von Substraten in einem Prozessraum, bei dem eineA method for controlling the process gas concentration for the treatment of substrates in a process space, wherein a
Flüssigkeit mittels hindurchgeleiteter Bläschen eines Trägergases in einem Bubbler verdampft wird, gekennzeichnet durch das Herstellen eines vorgegebenen konstanten Innendruckes im Bubbler und nachfolgendes Einleiten des Trägergases in den Bubbler bei gleichzeitiger Temperaturregelung des zu verdampfenden Mediums innerhalb des Bubblers zur Einstellung eines vorgegebenen Dampfdrucks .Liquid is vaporized by means of bubbled bubbles of a carrier gas in a bubbler, characterized by the production of a predetermined constant internal pressure in the bubbler and subsequent introduction of the carrier gas in the bubbler with simultaneous temperature control of the medium to be evaporated within the bubbler for setting a predetermined vapor pressure.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Temperatur im Bubbler zur Anpassung der Konzentration des Medi- ums im Trägergas an unterschiedliche Prozessbedingungen ohne Unterbrechung der Zuführung des Trägergases in den Bubbler änderbar ist.2. The method according to claim 1, characterized in that the temperature in the bubbler for adjusting the concentration of the medium in the carrier gas to different process conditions without interruption of the supply of the carrier gas in the bubbler is changeable.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Verrohrung vom Bubbler zum Prozessraum in die Tempera- turregelung einbezogen wird.3. The method according to claim 1 or 2, characterized in that the piping from the bubbler to the process space is included in the temperature control.
4. Verfahren nach Anspruch 3, dadurch gekennzeichnet, dass die Verrohrung auf die gleiche Temperatur wie im Bubbler geregelt wird. 4. The method according to claim 3, characterized in that the piping is regulated to the same temperature as in the bubbler.
EP08750339A 2007-05-23 2008-05-19 Method for controlling process gas concentration Withdrawn EP2150634A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024266A DE102007024266A1 (en) 2007-05-23 2007-05-23 Method for controlling the process gas concentration
PCT/EP2008/056104 WO2008142043A1 (en) 2007-05-23 2008-05-19 Method for controlling process gas concentration

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EP2150634A1 true EP2150634A1 (en) 2010-02-10

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US (1) US20100215853A1 (en)
EP (1) EP2150634A1 (en)
JP (1) JP2010527794A (en)
KR (1) KR20100030620A (en)
CN (1) CN101688304A (en)
DE (1) DE102007024266A1 (en)
TW (1) TW200902132A (en)
WO (1) WO2008142043A1 (en)

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JP5884448B2 (en) * 2011-12-01 2016-03-15 富士電機株式会社 Solder joining apparatus and solder joining method
DE102012021527A1 (en) 2012-10-31 2014-04-30 Dockweiler Ag Device for generating a gas mixture

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DE102007024266A1 (en) 2008-11-27
JP2010527794A (en) 2010-08-19
WO2008142043A1 (en) 2008-11-27
TW200902132A (en) 2009-01-16
TWI372650B (en) 2012-09-21
US20100215853A1 (en) 2010-08-26
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CN101688304A (en) 2010-03-31

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