EP2111654A4 - Transistor organique utilisant des dérivés de thiazolothiazole et son procédé de fabrication - Google Patents
Transistor organique utilisant des dérivés de thiazolothiazole et son procédé de fabricationInfo
- Publication number
- EP2111654A4 EP2111654A4 EP08722953A EP08722953A EP2111654A4 EP 2111654 A4 EP2111654 A4 EP 2111654A4 EP 08722953 A EP08722953 A EP 08722953A EP 08722953 A EP08722953 A EP 08722953A EP 2111654 A4 EP2111654 A4 EP 2111654A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- fabricating
- same
- organic transistor
- thiazolothiazole derivatives
- thiazolothiazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/12—Copolymers
- C08G2261/124—Copolymers alternating
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/141—Side-chains having aliphatic units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3246—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing nitrogen and sulfur as heteroatoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/90—Applications
- C08G2261/92—TFT applications
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070014879A KR100943146B1 (ko) | 2007-02-13 | 2007-02-13 | 티아졸로티아졸 유도체를 이용한 유기 트랜지스터 및 이의제조방법 |
PCT/KR2008/000857 WO2008100085A1 (fr) | 2007-02-13 | 2008-02-13 | Transistor organique utilisant des dérivés de thiazolothiazole et son procédé de fabrication |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2111654A1 EP2111654A1 (fr) | 2009-10-28 |
EP2111654A4 true EP2111654A4 (fr) | 2011-08-24 |
EP2111654B1 EP2111654B1 (fr) | 2013-07-03 |
Family
ID=39690263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08722953.0A Active EP2111654B1 (fr) | 2007-02-13 | 2008-02-13 | Transistor organique utilisant des dérivés de thiazolothiazole et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (1) | US8222633B2 (fr) |
EP (1) | EP2111654B1 (fr) |
JP (1) | JP5202545B2 (fr) |
KR (1) | KR100943146B1 (fr) |
WO (1) | WO2008100085A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2410002A4 (fr) * | 2009-03-17 | 2013-05-22 | Sumitomo Chemical Co | Composé et élément l'utilisant |
CN102348759B (zh) * | 2009-03-17 | 2013-07-10 | 住友化学株式会社 | 组合物及使用它的元件 |
CN103159936B (zh) * | 2011-12-13 | 2016-01-13 | 海洋王照明科技股份有限公司 | 含并噻唑单元的聚合物及其制备方法和太阳能电池器件 |
JP6725098B2 (ja) | 2016-06-08 | 2020-07-15 | エルジー・ケム・リミテッド | 有機トランジスタおよびガスセンサ |
KR102054047B1 (ko) | 2016-10-13 | 2019-12-10 | 주식회사 엘지화학 | 유기트랜지스터 및 가스센서 |
KR102134507B1 (ko) | 2017-03-21 | 2020-07-16 | 주식회사 엘지화학 | 화합물 및 이를 포함하는 유기 태양 전지 |
KR102103059B1 (ko) | 2017-05-18 | 2020-05-29 | 주식회사 엘지화학 | 유기트랜지스터 |
WO2019013486A1 (fr) | 2017-07-10 | 2019-01-17 | 주식회사 엘지화학 | Dispositif électrochrome comprenant un composé électrochrome et son procédé de fabrication |
KR102120532B1 (ko) | 2017-09-18 | 2020-06-16 | 주식회사 엘지화학 | 유기트랜지스터 |
KR102324616B1 (ko) * | 2018-07-13 | 2021-11-09 | 주식회사 엘지화학 | 감광성 수지 조성물, 감광성 수지막 및 반도체 절연 필름 |
KR20200025825A (ko) | 2018-08-31 | 2020-03-10 | 주식회사 엘지화학 | 유기 전자 소자의 제조 방법 |
KR102507552B1 (ko) | 2018-10-04 | 2023-03-07 | 주식회사 엘지화학 | 중합체 및 이를 포함하는 유기 전자 소자 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1807428A (zh) * | 2005-12-08 | 2006-07-26 | 中国科学院长春应用化学研究所 | 稠环单元封端的齐聚噻吩类高迁移率有机半导体材料及用途 |
WO2007145482A1 (fr) * | 2006-06-15 | 2007-12-21 | Lg Chem, Ltd. | Dérivés de thiazolothiazole et dispositif électronique organique les utilisant |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6372154B1 (en) * | 1999-12-30 | 2002-04-16 | Canon Kabushiki Kaisha | Luminescent ink for printing of organic luminescent devices |
US6953947B2 (en) * | 1999-12-31 | 2005-10-11 | Lg Chem, Ltd. | Organic thin film transistor |
JP4112800B2 (ja) * | 2000-12-05 | 2008-07-02 | 富士フイルム株式会社 | 発光素子及びその製造方法 |
JP2003187983A (ja) * | 2001-12-17 | 2003-07-04 | Ricoh Co Ltd | 有機elトランジスタ |
US6770904B2 (en) * | 2002-01-11 | 2004-08-03 | Xerox Corporation | Polythiophenes and electronic devices generated therefrom |
US7002176B2 (en) * | 2002-05-31 | 2006-02-21 | Ricoh Company, Ltd. | Vertical organic transistor |
US20060243965A1 (en) * | 2003-01-28 | 2006-11-02 | De Leeuw Dagobert M | Electronic device |
JP2004259529A (ja) * | 2003-02-25 | 2004-09-16 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
JP4366116B2 (ja) * | 2003-05-20 | 2009-11-18 | キヤノン株式会社 | 電界効果型有機トランジスタ |
DE10332567A1 (de) * | 2003-07-11 | 2005-02-17 | Infineon Technologies Ag | Verbindung für die Bildung einer Schicht auf einem Substrat, Verfahren zur Herstellung einer Schicht auf einem Substrat und Halbleiterbauelement |
JP2005243822A (ja) * | 2004-02-25 | 2005-09-08 | Seiko Epson Corp | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器 |
EP1737027B1 (fr) * | 2004-08-20 | 2017-10-11 | Panasonic Intellectual Property Management Co., Ltd. | Liquide de revêtement pour formation de film multicouche organique, procédé de fabrication d'un transistor à effet de champ et transistor à effet de champ |
US7964440B2 (en) * | 2004-12-20 | 2011-06-21 | Palo Alto Research Center Incorporated | Phase-separated composite films and methods of preparing the same |
JP2006206503A (ja) * | 2005-01-28 | 2006-08-10 | Tokyo Institute Of Technology | π電子系化合物、及びそれを用いたn−型有機電界効果トランジスタ |
JP2006339474A (ja) * | 2005-06-03 | 2006-12-14 | Dainippon Printing Co Ltd | 有機半導体材料、有機半導体構造物及び有機半導体装置 |
DE202005009955U1 (de) * | 2005-06-24 | 2005-09-22 | Schön, Hendrik | Farbveränderliche Lichtquelle |
US7718999B2 (en) * | 2006-12-14 | 2010-05-18 | Xerox Corporation | Polythiophene electronic devices |
-
2007
- 2007-02-13 KR KR1020070014879A patent/KR100943146B1/ko active IP Right Grant
-
2008
- 2008-02-13 US US12/449,519 patent/US8222633B2/en active Active
- 2008-02-13 WO PCT/KR2008/000857 patent/WO2008100085A1/fr active Application Filing
- 2008-02-13 JP JP2009549523A patent/JP5202545B2/ja active Active
- 2008-02-13 EP EP08722953.0A patent/EP2111654B1/fr active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1807428A (zh) * | 2005-12-08 | 2006-07-26 | 中国科学院长春应用化学研究所 | 稠环单元封端的齐聚噻吩类高迁移率有机半导体材料及用途 |
WO2007145482A1 (fr) * | 2006-06-15 | 2007-12-21 | Lg Chem, Ltd. | Dérivés de thiazolothiazole et dispositif électronique organique les utilisant |
Non-Patent Citations (4)
Title |
---|
ANDO SHINJI ET AL: "High Performance n-Type Organic Field-Effect Transistors Based on .pi.-Electronic Systems with Trifluoromethylphenyl Groups", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, AMERICAN CHEMICAL SOCIETY, WASHINGTON, DC; US, vol. 127, no. 15, 1 January 2005 (2005-01-01), pages 5336 - 5337, XP002534244, ISSN: 0002-7863, DOI: 10.1021/JA042219 * |
I. OSAKA ET AL: "Novel Thiophene-Thiazolothiazole Copolymers for Organic Field-Effect Transistors", ADVANCED MATERIALS, vol. 19, no. 23, 3 December 2007 (2007-12-03), pages 4160 - 4165, XP055003140, ISSN: 0935-9648, DOI: 10.1002/adma.200701058 * |
KUMAKI DAISUKE ET AL: "Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 90, no. 5, 1 February 2007 (2007-02-01), pages 53506 - 053506, XP012095870, ISSN: 0003-6951, DOI: 10.1063/1.2436641 * |
See also references of WO2008100085A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR20080075663A (ko) | 2008-08-19 |
JP5202545B2 (ja) | 2013-06-05 |
EP2111654A1 (fr) | 2009-10-28 |
US20100012930A1 (en) | 2010-01-21 |
US8222633B2 (en) | 2012-07-17 |
WO2008100085A1 (fr) | 2008-08-21 |
JP2010518641A (ja) | 2010-05-27 |
KR100943146B1 (ko) | 2010-02-18 |
EP2111654B1 (fr) | 2013-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2111642A4 (fr) | Transistor organique et son procédé de fabrication | |
EP2111654A4 (fr) | Transistor organique utilisant des dérivés de thiazolothiazole et son procédé de fabrication | |
EP2178344A4 (fr) | Dispositif électroluminescent organique et procédé servant à fabriquer celui-ci | |
EP2180762A4 (fr) | Dispositif électroluminescent organique et son procédé de fabrication | |
EP2219417A4 (fr) | Dispositif électroluminescent organique et son procédé de fabrication | |
EP2175504A4 (fr) | Elément à électroluminescence organique et son procédé de fabrication | |
EP2141963A4 (fr) | Panneau électroluminescent organique et son procédé de fabrication | |
GB0816666D0 (en) | Semiconductor field effect transistor and method for fabricating the same | |
GB2453492B (en) | Organic el device and manufacturing method thereof | |
TWI371809B (en) | Wafer structure and method for fabricating the same | |
EP2135295A4 (fr) | Dispositif photovoltaique et son procede de fabrication | |
EP2271182A4 (fr) | Élément électroluminescent organique et procédé de fabrication associé | |
TWI318798B (en) | Organic thin film transistor and method for manufacturing the same | |
EP2312637A4 (fr) | Transistor organique et son procédé de fabrication | |
TWI371836B (en) | Semiconductor device and method for fabricating the same | |
TWI341033B (en) | Pixel structure and method for manufacturing the same | |
EP2175492A4 (fr) | Dispositif semi-conducteur et procédé pour sa fabrication | |
GB0723262D0 (en) | Organic then film transistors and methods of making the same | |
EP2312636A4 (fr) | Transistor a couche mince organique, son procede de fabrication, element d' affichage utilisant le transistor a couche mince organique, et affichage | |
EP2239255A4 (fr) | Composé pour dispositif électroluminescent organique et dispositif électroluminescent organique l'utilisant | |
EP2234186A4 (fr) | Élément à électroluminescence organique et son procédé de fabrication | |
EP2247528A4 (fr) | Nanodispositif, transistor comprenant le nanodispositif, procédé pour fabriquer le nanodispositif, et procédé pour fabriquer le transistor | |
EP2030481A4 (fr) | Procédé de fabrication de dispositif électronique organique et dispositif électronique organique fabriqué selon ce même procédé | |
TWI372576B (en) | Organic light-emitting device and method for forming the same | |
TWI316296B (en) | Thin-film transistor and fabrication method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20090812 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: KISELEV, ROMAN Inventor name: LEE, JAE-MIN Inventor name: CHOI, HYEON |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: CHOI, HYEON Inventor name: KISELEV, ROMAN Inventor name: LEE, JAE-MIN |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20110727 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 51/30 20060101AFI20110721BHEP |
|
17Q | First examination report despatched |
Effective date: 20120731 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602008025739 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0051300000 Ipc: H01L0051050000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 51/30 20060101ALN20130228BHEP Ipc: H01L 51/05 20060101AFI20130228BHEP |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP Ref country code: AT Ref legal event code: REF Ref document number: 620200 Country of ref document: AT Kind code of ref document: T Effective date: 20130715 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602008025739 Country of ref document: DE Effective date: 20130829 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 620200 Country of ref document: AT Kind code of ref document: T Effective date: 20130703 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: VDEP Effective date: 20130703 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20131104 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130807 Ref country code: BE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20131003 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20131103 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20131014 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20131004 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
26N | No opposition filed |
Effective date: 20140404 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602008025739 Country of ref document: DE Effective date: 20140404 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20140213 Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20140213 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20140228 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20140228 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST Effective date: 20141031 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20140213 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20140213 Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20140228 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20080213 Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20130703 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602008025739 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0051050000 Ipc: H10K0010000000 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20230119 Year of fee payment: 16 |