EP2059629A2 - Liquid crystal templated deposition method - Google Patents
Liquid crystal templated deposition methodInfo
- Publication number
- EP2059629A2 EP2059629A2 EP07804188A EP07804188A EP2059629A2 EP 2059629 A2 EP2059629 A2 EP 2059629A2 EP 07804188 A EP07804188 A EP 07804188A EP 07804188 A EP07804188 A EP 07804188A EP 2059629 A2 EP2059629 A2 EP 2059629A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- metal
- mixture
- compound
- surfactant
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/24—Alkaline accumulators
- H01M10/30—Nickel accumulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the present invention relates to a method of depositing metals having a good mesostructure from salts or other compounds thereof using a liquid crystal templating technique.
- mesostructured materials produced in the present invention which are generally porous in nature and so may be described as “mesoporous”, are sometimes referred to as “nanostructured".
- nanostructured since the prefix “nano” strictly means 10 , and the pores in such materials normally range in size from 10 " “ to 10 " “ m, it is better to refer to them, as we do here, as “mesostructured”.
- liquid crystal templating comprises forming a liquid crystal comprising at least two "soft matter” phases arranged in a generally crystal-like regular array.
- This soft matter is often loosely referred to as “liquid”, hence the term “liquid crystal”.
- a solid material is deposited from one of these phases, either chemically or electrochemically, and naturally assumes the configuration of the phase from which it is deposited. The soft matter is then removed. This permits the preparation of materials having more-or-less regular structures which could not be achieved in any other way.
- the liquid crystal phases are usually prepared with the aid of a surfactant and many such surfactants have been proposed for use in the process, including both ionic and non-ionic surfactants.
- a surfactant in which a metal is deposited from a metal salt or similar compound, one way of achieving these desiderata is by increasing the concentration of the metal salt or other metal compound to as high a level as is achievable.
- the present invention consists in a process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration which, in a comparative mixture identical to the liquid crystal phase-containing mixture except that the ionic surfactant is replaced by a mixture of compounds of general formula CH 3 -(CH 2 ) ⁇ - (CH 2 CH 2 CO y -OH, where y is a number and the abundance of the compound having that value of y is approximately that shown in the following Table,
- liquid crystal phase would cause the liquid crystal phase to be unstable or produce a deposit with a cathodic charge density less than half the value of that obtained using the ionic surfactant, with the same deposition charge density.
- a commercially available mixture of compounds of formula CH 3 -(CH 2 )i 5 -(CH 2 CH 2 O) y -OH having the relative abundances of compounds of different values of y shown in the above Table is Brij 56, which is widely available, e.g. from Univar Ltd, United Kingdom.
- the cathodic charge density referred to herein may be measured by the method described in detail in Example 5 hereafter.
- the present invention consists in a process which comprises: forming a mixture comprising a metal compound from which the metal or a compound of the metal may be deposited, a solvent and a surfactant in amounts sufficient to form a liquid crystal phase in the mixture; and electrochemically depositing the metal or a compound of the metal from the metal compound, characterised in that the surfactant is an ionic surfactant and the metal compound is present in the aqueous component of the liquid crystal phase-containing mixture at a concentration of at least 0.4 M.
- the solvent is included in the mixture in order to dissolve the metal compound and to form a liquid crystalline phase in conjunction with the surfactant, thereby to provide a medium for the deposition reaction.
- water will be used as the preferred solvent.
- a suitable organic solvent may be used, for example formamide or ethylene glycol.
- ionic surfactant capable of forming a liquid crystal phase in the mixture of the present invention
- Preferred surfactants are those having an ionic group attached, directly or indirectly, to one or more hydrocarbon chains having at least 8 carbon atoms, preferably from 8 to 30 carbon atoms.
- ionic group we mean a group, such as an ammonium group, which already contains ions, or a group, such as an amine group, which can readily form ions. Examples of such compounds include amines and ammonium compounds e.g.
- R , R 2 and R 3 or R 1 , R 2 , R 3 and R 4 represents a hydrocarbon group having at least 8, preferably at least 10, more preferably from 8 to 30 and most preferably from 10 to 20, carbon atoms
- X ' represents an anion.
- Other examples include salts containing long chain fatty acid or hydrocarbon residues, said residues each having at least 8, preferably at least 10, more preferably from 8 to 30 and most preferably from 10 to 20, carbon atoms.
- preferred surfactants include cetyltrimethylammonium chloride (CTAC), cetyltrimethylammonium bromide (CTAB), sodium dodecyl sulphate (SDS), hexadecyl amine (HDA), dodecyltrimethylammonium chloride (DTAC) and dioctyl sodium sulphosuccinate (also known as Aerosol OT - AOT).
- AOT and SDS are anionic surfactants while the others specified by the formulae NR 1 R 2 R 3 or N + R 1 R 2 R 3 R 4 X " are cationic.
- the preferred surfactants are the ammonium compounds, especially cetyltrimethylammonium bromide.
- the present invention may be used in connection with any metal or compound of a metal which it is desired to form into a mesostructure by deposition from a liquid crystal phase.
- metals include: nickel, platinum, cobalt, iron, tin, lead, selenium, manganese, chromium, copper, zinc, niobium, molybdenum, titanium, palladium, gold, silver, cadmium, and mercury, or mixtures or alloys of any two or more thereof.
- the invention is of especial value in connection with nickel, cobalt, zinc, iron, tin, copper, lead, selenium, or cadmium, or a mixture or alloy of any two or more thereof, more preferably nickel or cobalt or a mixture or alloy thereof, especially nickel and mixtures of nickel with other metals, e.g. nickel/cobalt, since, in these cases, the instability of the liquid crystal system is manifest at relatively low concentration levels.
- the metal compounds employed to form the liquid crystal system are preferably metal salts. The salts used will, of course, depend on the metal or compound of the metal to be deposited and should be soluble in the solvent employed.
- salts include the chlorides, acetates, sulphates, bromides, nitrates, sulphamates, and tetrafluoroborates, especially those of the above metals, and preferably nickel (II) chloride, nickel (II) acetate, nickel (II) sulphate, nickel (II) bromide, nickel (II) nitrate, nickel (II) sulphamate, and nickel (II) tetrafluoroborate.
- the metal itself may be deposited or a compound of the metal may be deposited.
- examples of such compounds of metals include the oxides and hydroxides.
- the concentration of the salt the aqueous component should be at least 0.4 M, more preferably at least 0.6 M.
- the maximum concentration is, of course, saturation and this varies from one salt to another, but the value for any salt is well known or can easily be determined.
- the concentration is from 0.4 M to 4 M, more preferably from 0.6 M to 3 M and most preferably from 0.8 M to 2 M.
- the minimum concentration of 0.4 M applies only to the salt having the highest concentration.
- the other salt or salts may be present in lower concentrations.
- nickel and cobalt salts it will normally be the nickel salt that is at the higher concentration.
- the total concentration of the two or more salts should be at least 0.4M.
- the mixture of solvent, surfactant and metal salt, optionally with other components such as are well known in the art, will form a liquid crystal phase.
- the desired metal is then deposited from the mixture using conventional electrochemical means. Since mesostructured materials often lack structural strength, they are preferably deposited onto a substrate, e.g. a metal, such as gold, copper, silver, platinum, tin, aluminium, nickel, rhodium or cobalt, or an alloy containing any of these metals.
- the substrate may, if desired, be microporous, with pores of a size preferably in the range from 20 to 500 micrometres. Where the substrate is a metal foil, the substrate preferably has a thickness in the range from 2 to 50 micrometres.
- the substrate preferably is a nickel foil.
- Suitable methods for depositing mesoporous materials as films onto a substrate by electrochemical deposition are known in the art.
- suitable electrochemical deposition methods are disclosed in EP-A-993,512; Nelson, et al., "Mesoporous Nickel/Nickel Oxide Electrodes for High Power Applications' ', J. New Mat. Electrochem. Systems, 5, 63-65 (2002); Nelson, et al., "Mesoporous Nickel/Nickel Oxide - a Nanoarchitectured Electrode " , Chem. Mater., 2002, 14, 524-529.
- the mesoporous material is formed by electrochemical deposition from a lyotropic liquid crystalline phase.
- a template is formed by self-assembly from the long-chain surfactants described above and water into a desired liquid crystal phase.
- the mesoporous structure has a periodic arrangement of pores having a defined, recognisable topology or architecture, for example cubic, lamellar, oblique, centred rectangular, body-centred orthorhombic, body-centred tetragonal, rhombohedral, hexagonal.
- the mesoporous structure has a periodic pore arrangement that is hexagonal, in which the mesoporous metal or compound of the metal is perforated by a hexagonally oriented array of pores that are of uniform diameter and continuous through the thickness of the metal or compound of the metal.
- a liquid crystal template was made by mixing 3O g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.56 M nickel (II) chloride (NiCl 2 ) and 0.24 M cobalt (II) chloride (CoCl 2 ).
- An electrochemical cell using the mixed liquid crystal as electrolyte and nickel foil positive and negative electrodes was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material.
- Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 50 minutes, after which time a charge density of -2.0 ClcnP- had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 416 mC/cm ⁇ .
- a liquid crystal template was made by mixing 3O g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (NiCl 2 ) and 0.36 M cobalt (II) chloride (CoCl 2 ).
- An electrochemical cell using the mixed liquid crystal as electrolyte and nickel foil positive and negative electrodes was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material.
- Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 25 minutes, after which time a charge density of -2.0 Clever had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 324 mC/cm .
- a liquid crystal template was made by mixing 30 g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (NiC ⁇ ) and 0.36 M cobalt (II) chloride (C0CI2).
- CTAB cetyltrimethylammonium bromide
- NiC ⁇ nickel
- II nickel
- C0CI2 0.36 M cobalt
- An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material. Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 40 minutes, after which time a charge density of -2.6 C/cm ⁇
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH). At a scan rate of 20 mV/s, the film was cycled continuously between 0 V and 0.55 V. On the third cycle, the film had a cathodic charge density of 442 mC/cm .
- a liquid crystal template was made by mixing 3O g of cetyltrimethylammonium bromide (CTAB) with 30 g of an aqueous solution consisting of 0.84 M nickel (II) chloride (NiC ⁇ ) and 0.36 M cobalt (II) chloride (CoC ⁇ ).
- CTAB cetyltrimethylammonium bromide
- NiC ⁇ nickel
- CoC ⁇ cobalt
- An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of nanoporous material. Electrodeposition of the mesoporous nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 75 minutes, after which time a charge density of -3.2 Clever had passed. The electrodeposited film was then washe
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 614 mC/cm .
- a liquid crystal template was made by mixing 30 g of Brij ® 56 with 30 g of an aqueous solution consisting of 0.8 M nickel (II) chloride (NiCl 2 ) and 0.36 M cobalt (II) chloride (CoCl 2 ).
- An electrochemical cell using the mixed liquid crystal as electrolyte, nickel foil as negative electrode and a graphite sheet as positive electrode was then assembled.
- a saturated calomel reference electrode (SCE) was also inserted to control the subsequent electrodeposition of material.
- Electrodeposition of the nickel/cobalt containing layer was carried out by applying a constant potential of -0.75 V versus the SCE reference to one of the nickel foils. Electrodeposition was carried out for 75 minutes, after which time a charge density of -3.2 C/crn ⁇ had passed. The electrodeposited film was then washed in deionised water for 24 hours to remove the liquid crystal template.
- the charge storage capacity of the electrodeposited film was measured using cyclic voltammetry in 6 M potassium hydroxide (KOH) solution versus a mercury/mercury oxide reference electrode (Hg/HgO, with 6 M KOH).
- KOH potassium hydroxide
- Hg/HgO mercury/mercury oxide reference electrode
- the film was cycled continuously between 0 V and 0.55 V.
- the film had a cathodic charge density of 21 mC/cm .
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Secondary Cells (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Chemically Coating (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0617741A GB2441531A (en) | 2006-09-08 | 2006-09-08 | Liquid crystal templated deposition method |
| PCT/GB2007/003389 WO2008029160A2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2059629A2 true EP2059629A2 (en) | 2009-05-20 |
Family
ID=37232636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07804188A Withdrawn EP2059629A2 (en) | 2006-09-08 | 2007-09-07 | Liquid crystal templated deposition method |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20100044240A1 (en) |
| EP (1) | EP2059629A2 (en) |
| JP (1) | JP2010502839A (en) |
| KR (1) | KR20090063247A (en) |
| CN (1) | CN101563483B (en) |
| AU (1) | AU2007293317B2 (en) |
| CA (1) | CA2662714A1 (en) |
| GB (1) | GB2441531A (en) |
| TW (1) | TW200827497A (en) |
| WO (1) | WO2008029160A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5859855B2 (en) | 2008-10-20 | 2016-02-16 | キネテイツク・リミテツド | Synthesis of metal compounds |
| JP5366076B2 (en) * | 2008-11-21 | 2013-12-11 | 奥野製薬工業株式会社 | Electroplating bath for porous plating film containing additive for forming porous plating film |
| JP2010150622A (en) * | 2008-12-26 | 2010-07-08 | Hitachi Ltd | Plating liquid, conductive body substrate having projecting metallic structure and method of manufacturing the same |
| GB0913110D0 (en) | 2009-07-28 | 2009-09-02 | Cambridge Entpr Ltd | Electro-optic device |
| WO2012016480A1 (en) * | 2010-08-06 | 2012-02-09 | Delta Electronics, Inc. | Process for manufacturing porous material |
| WO2018058457A1 (en) * | 2016-09-29 | 2018-04-05 | 东北石油大学 | Method and device for preparing high-durability super-hydrophobic film on inner wall of slender metal pipe |
| CN107245732B (en) * | 2017-06-28 | 2019-03-12 | 无锡市恒利弘实业有限公司 | A method of high-strength corrosion-resisting cadmium tin titanium alloy being electroplated in 304 or 316L stainless steel surface |
| CN115249797B (en) * | 2021-12-28 | 2024-11-26 | 浙江理工大学 | An arrayed molybdenum-doped cobalt diselenide composite material and its preparation method and application |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5677390A (en) * | 1979-11-28 | 1981-06-25 | Gifu Daigaku | Electrodepositing method using liquid crystal substance as electrolytic liquid |
| GB9703920D0 (en) * | 1997-02-25 | 1997-04-16 | Univ Southampton | Method of preparing a porous metal |
| JP4303794B2 (en) * | 1997-06-27 | 2009-07-29 | ユニヴァーシティ オブ サウサンプトン | Porous film and preparation method thereof |
| GB9819160D0 (en) * | 1998-09-02 | 1998-10-28 | City Tech | Pellistor |
| JP4117704B2 (en) * | 2003-02-28 | 2008-07-16 | 学校法人早稲田大学 | Method for producing mesoporous metal |
| US8343690B2 (en) * | 2004-12-23 | 2013-01-01 | Seoul National University R&Db Foundation | Fabrication of mesoporous metal electrodes in non-liquid-crystalline phase and its application |
| GB0500035D0 (en) * | 2005-01-04 | 2005-02-09 | Nanotecture Ltd | Filter |
| JP4608335B2 (en) * | 2005-02-24 | 2011-01-12 | 学校法人早稲田大学 | Method for producing mesoporous metal film |
-
2006
- 2006-09-08 GB GB0617741A patent/GB2441531A/en not_active Withdrawn
-
2007
- 2007-08-28 TW TW096131857A patent/TW200827497A/en unknown
- 2007-09-07 WO PCT/GB2007/003389 patent/WO2008029160A2/en not_active Ceased
- 2007-09-07 KR KR1020097007170A patent/KR20090063247A/en not_active Withdrawn
- 2007-09-07 CA CA002662714A patent/CA2662714A1/en not_active Abandoned
- 2007-09-07 EP EP07804188A patent/EP2059629A2/en not_active Withdrawn
- 2007-09-07 AU AU2007293317A patent/AU2007293317B2/en not_active Expired - Fee Related
- 2007-09-07 JP JP2009527205A patent/JP2010502839A/en not_active Withdrawn
- 2007-09-07 CN CN2007800399753A patent/CN101563483B/en not_active Expired - Fee Related
- 2007-09-07 US US12/440,092 patent/US20100044240A1/en not_active Abandoned
Non-Patent Citations (1)
| Title |
|---|
| See references of WO2008029160A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008029160A2 (en) | 2008-03-13 |
| JP2010502839A (en) | 2010-01-28 |
| WO2008029160A3 (en) | 2008-10-09 |
| CA2662714A1 (en) | 2008-03-13 |
| CN101563483A (en) | 2009-10-21 |
| KR20090063247A (en) | 2009-06-17 |
| GB0617741D0 (en) | 2006-10-18 |
| GB2441531A (en) | 2008-03-12 |
| AU2007293317B2 (en) | 2012-06-28 |
| AU2007293317A1 (en) | 2008-03-13 |
| TW200827497A (en) | 2008-07-01 |
| CN101563483B (en) | 2011-07-27 |
| US20100044240A1 (en) | 2010-02-25 |
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