EP2057720B1 - Dispositif et procédé pour la production de rayonnement de l'ordre du téraherz - Google Patents

Dispositif et procédé pour la production de rayonnement de l'ordre du téraherz Download PDF

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Publication number
EP2057720B1
EP2057720B1 EP07802923A EP07802923A EP2057720B1 EP 2057720 B1 EP2057720 B1 EP 2057720B1 EP 07802923 A EP07802923 A EP 07802923A EP 07802923 A EP07802923 A EP 07802923A EP 2057720 B1 EP2057720 B1 EP 2057720B1
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Prior art keywords
thz
layer
substrate
waveguide
partial region
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Not-in-force
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EP07802923A
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German (de)
English (en)
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EP2057720A1 (fr
Inventor
Günther TRÄNKLE
Götz ERBERT
Andreas Klehr
Martin Hofmann
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Forschungsverbund Berlin FVB eV
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Forschungsverbund Berlin FVB eV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities

Definitions

  • the invention relates to a device for generating electromagnetic radiation in the infrared range with the features mentioned in claim 1, in particular the invention relates to a radiation source for a frequency range between 0.1 THz and about 10 THz (terahertz) based on a semiconductor laser structure.
  • coherent radiation can be generated at certain frequencies in the far infrared range, for example, by molecular lasers pumped with CO 2 lasers.
  • the wavelength range of 3 mm to 30 ⁇ m from 100 GHz to 10 THz
  • the use of a radiation source realized on a semiconductor chip of a wafer for this range of THz radiation with sufficient output power in the range between 1 ⁇ W and 1 W is of great industrial significance for spectroscopic applications in all questions of environmental protection, analytics and material characterization in medicine and biology as well as chemistry and physics.
  • THz radiation by means of differential frequency generation with two continuous laser sources with matching frequency spacing by means of photomixers KJ Siebert, H. Quast, R. Leonhardt, T. Löffler, M. Thomson, T. Bauer, H. Roskos, and S. Czasch, Appl. Phys. Lett. 80, 3003 (2002 ) and A. Nahata, JT Yardley, and TF Heinz, Appl. Phys. Lett. 81, 963 (2002 ); S. Verghese, KA McIntiosh, S. Calawa, WF Dinatale, EK Duerr, and KA Molvar, Appl. Phys. Lett. 73, 3824 (1998 ) known.
  • output light sources for this purpose fiber lasers, continuous solid-state lasers or even diode lasers can be used. Disadvantageously, the expense of such arrangements is relatively high due to the need for stabilization of the two lasers to each other.
  • THz radiation by means of difference frequency generation in two-color diode lasers is off M. Tani, P.Gu, M. Hyodo, K.Sakai, T.Hidaka, Optical and Quantum Electron. 32, 503 (2000 ) and C.-L. Wang and C.-L. Pan, Opt. Lett. 20, 1292 (1995 ); P.Gu, F. Chang, M.Tani, K.Sakai, and C.L. Pan, Jap. J. Appl. Phys. 38, L1246 (1999 ) known.
  • These systems use resonators that provide feedback to two wavelengths. These resonators can be realized either by two monolithically integrated Bragg gratings or by special external resonators.
  • the concepts for THz generation via photomixing with two separate lasers or with two-color lasers provide significantly lower output powers in comparison to quantum cascade lasers and the p-germanium laser and are - apart from the unnecessary cryogenic cooling - constructed in principle more complex.
  • An attenuation of less than 90% along the longitudinal axis of the waveguide layer in one pass means that the intensity of the THz radiation after passing through the substrate (along the longitudinal axis) over the length of the first and second regions is at least 10% of the original intensity ,
  • the second substrate material and / or the third material preferably consists of the dielectric, particularly preferably of an organic dielectric, more preferably of benzocyclobenzene (BCB).
  • BCB benzocyclobenzene
  • the first and second region of the substrate is preferably formed as a continuous substrate, wherein the first and second regions may be formed of different materials (preferably first region of a semiconducting material for injection of charge carriers and second region of an organic dielectric).
  • the substrate in its entirety, ie extending over the first and second regions) acts as a carrier substrate for the active layer, the waveguide layers and the cladding layers.
  • the substrate has a (preferably continuous) thickness between 80 microns and 160 microns.
  • the active medium layer, the first and second waveguide layers, the first and second cladding layers extend completely over the first and second regions of the substrate.
  • the contacts preferably extend only over the first region, the layer of the third material (additional resonator layer) and the reflective layers only over the second region.
  • the layer of active medium directly contacts the first and second waveguide layers; the first waveguide layer preferably directly contacts the first cladding layer; the second waveguide layer preferably directly contacts the second cladding layer; the first cladding layer preferably directly contacts the substrate both in the first and in the second region.
  • the second cladding layer directly contacts an electrical contact or one in the first region connected contact layer.
  • the second cladding layer directly contacts the (additional resonator) layer of the third material in the second region.
  • the layer of the active medium, the waveguide layers and the cladding layers only electrical contacts and possibly contact layers are provided, wherein in the second area next to the substrate, the active medium layer, the waveguide layers and the cladding layers no electrical Contacts (and possibly contact layers), but instead of this, the substrate or an (additional resonator) layer of the third material are provided in opposition to the substrate, said substrate and additional resonator on their outer surfaces in each case a THz radiation-reflecting layer to form a resonator.
  • the idea is therefore to provide a substrate with low attenuation for THz radiation, which due to the low attenuation in the second region (together with additional resonator layer and the reflective layers) may also be part of the resonator for the terahertz radiation.
  • the function of the additional resonator layer is to allow, in addition to the low attenuation for THz radiation, a suitable dimensioning for the resonator in order to realize the highest possible intensity of THz radiation and thus high efficiency.
  • the generation of the optical wave is therefore realized only in the first region (in which electrical contacts are present).
  • the due to the difference frequency generation generated THz radiation can be guided and amplified in the second region by means of the resonator, that sufficiently high performance can be achieved despite a compact and inexpensive to manufacture structure.
  • substrate and / or additional resonator layer are made of a material having an electromagnetic radiation absorption in the range of 0.1 THz to 10 THz of less than 11.5 cm -1 (corresponding to approximately 90% attenuation at preferred dimensions), 6.0 cm -1 (corresponds to approx. 70% damping at preferred dimensions) or 2.6 cm -1 (corresponds to approx. 40% damping at preferred dimensions).
  • a terahertz radiation source based on the principle of differential frequency generation can be particularly compact be formed.
  • the substrate used is formed in a first region, in which the optical wave is generated and guided, from a semi-insulating material with a low attenuation for electromagnetic radiation in the range from 0.1 THz to 10 THz.
  • the substrate also with a low attenuation for electromagnetic radiation in the range of 0.1 THz to 10 THz acts as a waveguide for the terahertz radiation in a second area, wherein by arranging a third material (also with a small Damping for electromagnetic radiation in the range from 0.1 THz to 10 THz) on the side facing away from the substrate side of the waveguide layers for the optical wave and corresponding, reflective layers, an amplifier or resonator for the terahertz radiation is formed.
  • a third material also with a small Damping for electromagnetic radiation in the range from 0.1 THz to 10 THz
  • the terahertz radiation is generated by difference frequency generation of two longitudinal modes in the first region and further guided in the second region and amplified and finally decoupled.
  • the two longitudinal modes can be excited and amplified for differential frequency generation both internally in the laser structure (for example, by frequency selective elements such as gratings) and by external feedback.
  • the device preferably has two (internal or external) frequency-selective elements (preferably gratings) which are used to excite two different modes with a wavelength separation of 0.00001 nm to 100 nm (preferably 0.5 nm-30 nm, particularly preferably 1 nm - 10 nm) are suitable.
  • the active layer may preferably consist of a material (eg semiconductor quantum wells, quantum wires or quantum dots) which is characterized by being in It gives him electronic transitions between quantized levels, which are resonant with the difference frequency to be generated.
  • a material eg semiconductor quantum wells, quantum wires or quantum dots
  • the waveguide geometry in the second region is designed to provide phase matching between the longitudinal modes and the electromagnetic radiation in the range of 0.1 THz to 10 THz, i.e., the former and the latter propagate through the second region at the same propagation velocity.
  • the optical thickness of the waveguide is adjusted by adjusting the geometry / refractive index.
  • the first substrate material comprises gallium arsenide, indium phosphide and / or gallium nitride.
  • the attenuation of the first substrate material for electromagnetic radiation in the range of 0.1 THz to 10 THz is less than 90%, more preferably less than 70%.
  • the attenuation of the second substrate material (substrate material in the second region) and the third material (the additional resonator layer) for electromagnetic radiation in the range of 0.1 THz to 10 THz is less than 40%, more preferably less than 10%.
  • the third material (which is arranged on the side of the waveguide facing away from the substrate) is present only in the second region, but not in the first region.
  • the reflective layer (which is disposed on the side of the layer of the third material facing away from the second cladding layer and on the side of the second substrate material facing away from the first cladding layer) is preferably present only in the second region, but not in the first region.
  • Substrate material in the second area and the third material (additional resonator layer) are preferably identical.
  • the substrate, at least one cladding layer, at least one waveguide layer and / or the layer of the active medium (active medium) are / is planar.
  • the substrate, at least one cladding layer, at least one waveguide layer and / or the layer of the active medium (active medium) are / is formed strip-shaped.
  • the substrate, at least one cladding layer, at least one waveguide layer and / or the layer of the active medium (active medium) is / are applied continuously over the first region and over the second region.
  • the reflective layer preferably has a reflectivity of greater than 60%, particularly preferably greater than 80%, for electromagnetic radiation in the range from 0.1 THz to 10 THz.
  • the reflective layer is formed of gold or aluminum.
  • the first contact on the underside of the substrate in the first region and the second contact on the second cladding layer in the first region is arranged.
  • a contact layer is arranged between the second cladding layer and the second contact.
  • the first cladding layer is an n-cladding layer
  • the first waveguide layer is an n-waveguide layer
  • the second cladding layer is a p-cladding layer
  • the second waveguide layer is a p-waveguide layer.
  • the first contact is a n contact
  • the second contact a p-contact and the contact layer a p-contact layer.
  • the first cladding layer is a p-type cladding layer
  • the first waveguide layer is a p-waveguide layer
  • the second cladding layer is an n-cladding layer
  • the second waveguide layer is an n-waveguide layer
  • the first contact is a p-contact
  • the second Contact is an n-contact
  • the contact layer is an n-contact layer.
  • the first region of the substrate preferably has an extension along the longitudinal axis between 200 ⁇ m and 1000 ⁇ m and the second region of the substrate has an extension along the longitudinal axis between 1000 ⁇ m and 3000 ⁇ m.
  • the layer thickness of the first substrate material preferably corresponds to the layer thickness of the second substrate material.
  • the layer thickness of the second substrate material preferably corresponds to the layer thickness of the third material.
  • the thickness of the first substrate material, the second substrate material and the third material is between 80 and 160 ⁇ m (particularly preferably 120 ⁇ m).
  • the end of the first region of the substrate facing away from the second region preferably has a front facet arranged perpendicular to the longitudinal axis and the end of the second region of the substrate remote from the first region has a rear facet arranged perpendicular to the longitudinal axis.
  • the front facets preferably have a reflectivity of less than 1%, particularly preferably less than 0.1%, and the back facet has a reflectivity greater than 95%, particularly preferably greater than 99%, for electromagnetic radiation in the range from 0.1 THz to 10 THz.
  • the device according to the invention is preferably designed as a coherent radiation source. Furthermore, the device according to the invention preferably has no cooling or the device according to the invention is preferably not operatively connected to a cooling system.
  • the waveguide in the second subregion is designed in such a way that electromagnetic radiation in the range from 0.1 THz to 10 THz and optical radiation have the same or a substantially same propagation velocity (deviation of less than 3%) along the longitudinal axis of the waveguide layers.
  • electromagnetic radiation in the range from 0.1 THz to 10 THz and optical radiation have the same or a substantially same propagation velocity (deviation of less than 3%) along the longitudinal axis of the waveguide layers.
  • the active medium has electronic transitions that resonate with the THz wave to be generated.
  • the device has two frequency-selective elements which are suitable for exciting two different modes with a wavelength spacing of 0.00001 nm to 100 nm.
  • the frequency-selective element preferably consists of an internal or external grid and / or a prism.
  • a (further) laser is coupled, wherein the of the active layer excited radiation and the radiation generated by the coupled laser have a wavelength spacing of 0.00001 nm to 100 nm.
  • an amplifier is arranged between the first axial region and the second axial region.
  • the substrate is preferably made of an inorganic semiconducting material.
  • the extension of the second portion of the resonator is between 60% and 90% of the length of the waveguide with respect to the longitudinal axis of the waveguide.
  • Fig. 1 shows a device according to the invention for the generation of THz radiation in a schematic, sectional representation.
  • the device comprises a substrate 1, which in the first axial section 7 of a semi-insulating material, for example gallium arsenide, indium phosphide or gallium nitride, with a low attenuation for electromagnetic radiation in the range of 0.1 THz to 10 THz and in the second axial section 8 also from a (not necessarily conductive) material with low attenuation for electromagnetic radiation in the range of 0.1 THz to 10 THz.
  • a semi-insulating material for example gallium arsenide, indium phosphide or gallium nitride
  • the inventive device the waveguide layers 3, 5, the cladding layers 2, 6 and the active layer 4, wherein in the first axial portion 7 by means of the contacts 12, 13 charge carriers are injectable and thus the first region, depending on the configuration with the Rear facet 18, the front facet 17 and / or an external resonator forms a laser diode.
  • At least two separate longitudinal laser modes are excited and amplified in the first axial section 7 (eg, by gratings), whereby terahertz radiation can be generated by differential frequency generation of the at least two longitudinal modes.
  • the excitation of the at least two separate longitudinal laser modes can alternatively also be effected by external resonators.
  • an optical wave 15 at 840 nm (whereupon the active layer 4 must be designed) can be excited.
  • the distance of the longitudinal laser modes must be 2.355 nm. In the exemplary embodiment, this is a laser with internal grids that generate 2 modes. If second-order frequency-selective gratings are used to excite the longitudinal laser modes, the grating periods are 254 nm and 256 nm. These values can vary between 0.1 and 10 THz depending on the target position (THz wave 16).
  • the distance of the longitudinal laser modes can be calculated. From the distance of the longitudinal laser modes, the corresponding intra-cavity / extra-cavity parameters can then be calculated.
  • the waveguide is designed such that a THz wave 16 is guided and amplified in addition to the optical wave 15.
  • the gain medium 4 is such that it contains electronic transitions which are in resonance with the THz wave 16 and amplify it parametrically.
  • the low-loss waveguiding of the THz wave is realized by the substrate 1 and the layer 10, which have a low attenuation for electromagnetic radiation in the range of 0.1 THz to 10 THz.
  • the reflective layers 11 prevent decoupling of the THz wave 16 via the waveguide 1, 10.
  • the waveguide also ensures the phase matching between the optical wave 15 and the THz wave 16.
  • the second axial portion 8 is designed so that a resonator structure is realized in which the maximum of the THz wave 16 coincides with the gain medium 4 and the resonator is adapted for the THz wave.
  • the optical waveguide 3, 5 is preferably (or if possible) centrally positioned in the THz waveguide 1, 10 in order to realize a high THz confinement factor or a good coupling between the optical and THz modes.
  • first all the functional layers (1-6 and 12-14) are formed continuously over the length of the first section 7 and the second section 8, and subsequently the substrate 1 and the contact layers 12, 13 and 14 become axial in the second Section 8 etched away and replaced by THz wave guiding layers (second substrate material 1 and layer 10).
  • the THz resonators 11 are then applied to the THz waveguiding layers 1, 10.
  • the advantage of this structure is that the maximum of the THz wave 16 coincides with the gain medium 4.
  • the structure further has a front facet 17 with a low reflectivity for the THz wave 16 and a back facet 18 with a high reflectivity for the THz wave 16.
  • the THz shaft 16 is coupled out via the front facet 17.
  • Fig. 2 shows preferred resonator configurations for generating coherent terahertz radiation according to the present invention.
  • Fig. 2 a shows the standard configuration (corresponds with Fig. 1 ) in which the two modes of the optical wave 15 (ie, two wavelength-defined waves between 0.00001 nm to 100 nm) are generated in the first section 7 (acting as a laser).
  • the THz wave 16 is thereby generated by difference frequency generation of the two modes in the first Section 7 is generated and amplified in the second section 8 (which acts as a low attenuation THz waveguide).
  • Fig. 2 b shows a THz waveguide according to the invention (has all the features of the second portion 8 of the device according to the invention - so it lacks the first axial region 7), which can be coupled to a laser diode (first section 7) to generate coherent terahertz radiation.
  • the THz waveguide according to the invention has both an inner waveguide for an optical wave (300 nm -1500 nm) and an outer waveguide for a THz wave.
  • a mode selection can be done by external ( Fig. 2c) or internal frequency-selective elements take place. Instead of two frequency-selective elements, it is also possible to use a single frequency-selective element which excites both modes, for example a grating with two different superimposed lattice constants.
  • Fig. 2 d shows an alternative apparatus according to the invention for generating coherent terahertz radiation, in which the two optical waves with defined wavelength spacing between 0.00001 nm to 100 nm not by frequency-selective (s) element (s), but by two consecutively switched laser is generated, which generate laser radiation with a defined wavelength distance between 0.00001 nm to 100 nm.
  • Fig. 2 e shows an inventive device for generating coherent terahertz radiation, in which between the first area and the second area an amplifier is arranged.
  • Fig. 3 For example, the transmission behavior of THz radiation is shown in an n-doped GaAs substrate (as used in prior art devices) and in a semi-insulating GaAs substrate. It is found that the absorption in the n-doped GaAs substrate is much stronger, and therefore the arrangement of a semi-insulating GaAs substrate according to the invention in the first axial section 7 leads to a higher efficiency.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Claims (7)

  1. Dispositif pour la production de rayonnement (16) électromagnétique dans la plage de 0,1 THz à 10 THz par la génération de fréquence de différence de deux modes laser longitudinaux, comprenant :
    un substrat (1), une première couche (2) de gaine disposée sur le substrat (1), une première couche (3) de guide d'ondes disposée sur la première couche (2) de gaine, une couche (4) d'un milieu actif disposée sur la première couche (3) de guide d'ondes, une deuxième couche (5) de guide d'ondes disposée sur la couche (4) du milieu actif, une seconde couche (6) de gaine disposée sur la deuxième couche (5) de guide d'ondes, et un premier contact (12) et un deuxième contact (13) destinés à l'injection de porteurs de charges,
    caractérisé en ce que
    la couche (4) active est disposée entre une facette (17) avant et une facette (18) arrière et entre en contact direct avec la facette (17) avant et la facette (18) arrière, le premier contact (12) et le deuxième contact (13) s'étendant sur une première zone (7) partielle le long de l'axe (9) longitudinal des couches (3, 5) de guides d'ondes, entre la facette (17) avant et la facette (18) arrière, et le substrat (1) consistant, dans la première zone (7) partielle, en un premier matériau de substrat semi-isolant ayant une atténuation inférieure à 90% pour le rayonnement électromagnétique dans la plage de 0,1 THz à 10 THz, et le substrat (1) consistant, dans une seconde zone (8) partielle complémentaire à la première zone (7) partielle, en un deuxième matériau de substrat ayant une atténuation inférieure à 90% le long de l'axe (9) longitudinal des couches (3, 5) de guides d'ondes pour le rayonnement électromagnétique dans la plage de 0,1 THz à 10 THz, la première zone (7) partielle et la seconde zone (8) partielle s'étendant sur la zone entière entre la facette (17) avant et la facette (18) arrière, au total, et une couche (10) supplémentaire en un troisième matériau ayant une atténuation inférieure à 90% pour le rayonnement électromagnétique dans la plage de 0,1 THz à 10 THz étant disposée, sur la deuxième couche (6) de gaine, seulement dans la seconde zone (8) partielle du substrat (1), et le côté de la couche (10) supplémentaire détourné de la deuxième couche (6) de gaine ainsi que le côté du substrat (1) détourné de la première couche (2) de gaine comprenant une couche (11) réfléchissante pour le rayonnement électromagnétique dans la plage de 0,1 THz à 10 THz.
  2. Dispositif selon la revendication 1,
    caractérisé en ce que
    l'épaisseur de couche du substrat (1) dans la première zone (7) partielle est identique à l'épaisseur de couche du substrat (1) dans la seconde zone (8) partielle.
  3. Dispositif selon l'une des revendications précédentes,
    caractérisé en ce que
    l'épaisseur de couche du substrat (1) dans la seconde zone (8) partielle est identique à l'épaisseur de couche (10) supplémentaire.
  4. Dispositif selon l'une des revendications précédentes,
    caractérisé en ce que
    l'épaisseur de couche du substrat (1) dans la première zone (7) partielle, l'épaisseur de couche du substrat (1) dans la seconde couche partielle (8), et l'épaisseur de la couche (10) supplémentaire sont dans la plage comprise entre 80 µm et 160 µm.
  5. Dispositif selon l'une des revendications précédentes,
    caractérisé en ce que
    la facette (17) avant a une réflectivité inférieure à 5%, et/ou la facette (18) arrière a une réflectivité supérieure à 85% pour le rayonnement électromagnétique dans la plage de 0,1 THz à 10 THz.
  6. Dispositif selon l'une des revendications précédentes,
    caractérisé en ce que
    le guide (2, 3, 5, 6) d'ondes dans la seconde zone (8) partielle est conçue de sorte que le rayonnement (16) électromagnétique dans la plage de 0,1 THz à 10 THz et le rayonnement (15) optique ont la même vitesse de propagation le long de l'axe (9) longitudinal des couches (3, 5) de guides d'ondes.
  7. Dispositif selon l'une des revendications précédentes,
    caractérisé en ce que
    le dispositif comprend deux éléments sélectifs en fréquence aptes à l'excitation de deux modes différents ayant une distance de longueur d'onde de 0,00001 nm à 100 nm.
EP07802923A 2006-09-01 2007-08-27 Dispositif et procédé pour la production de rayonnement de l'ordre du téraherz Not-in-force EP2057720B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006041728A DE102006041728B4 (de) 2006-09-01 2006-09-01 Vorrichtung und Verfahren zur Erzeugung von kohärenter Terahertz-Strahlung
PCT/EP2007/058885 WO2008025746A1 (fr) 2006-09-01 2007-08-27 Dispositif et procédé pour la production de rayonnement de l'ordre du téraherz

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EP2057720A1 EP2057720A1 (fr) 2009-05-13
EP2057720B1 true EP2057720B1 (fr) 2011-09-14

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EP (1) EP2057720B1 (fr)
AT (1) ATE524855T1 (fr)
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WO2008025746A1 (fr) 2008-03-06
EP2057720A1 (fr) 2009-05-13
DE102006041728B4 (de) 2010-04-08
DE102006041728A1 (de) 2008-03-13

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