EP1943685A2 - Verfahren und vorrichtung zum herstellen eines elektrischen solarzellen-kontaktstruktur an einem substrat - Google Patents
Verfahren und vorrichtung zum herstellen eines elektrischen solarzellen-kontaktstruktur an einem substratInfo
- Publication number
- EP1943685A2 EP1943685A2 EP07847289A EP07847289A EP1943685A2 EP 1943685 A2 EP1943685 A2 EP 1943685A2 EP 07847289 A EP07847289 A EP 07847289A EP 07847289 A EP07847289 A EP 07847289A EP 1943685 A2 EP1943685 A2 EP 1943685A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- mask
- solar cell
- substrates
- metal vapor
- cell contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 230000033001 locomotion Effects 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 19
- 235000012431 wafers Nutrition 0.000 claims description 17
- 239000007769 metal material Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 230000002457 bidirectional effect Effects 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 abstract 6
- 238000011084 recovery Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- -1 tin or nickel Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to a method for producing an electrical solar cell contact structure on a substrate according to the preamble of claim 1 and to an apparatus for producing a solar cell electrical contact structure according to the preamble of claim 22.
- busbars metal interconnect structures
- the so-called busbars are provided on the rear sides of the solar cells to be interconnected.
- the metal connectors To solder the metal connectors to the busbars, they must have a suitable surface finish. From this point of view, the material used for the busbars is silver in particular.
- busbars on solar cells screen printing methods are usually used, wherein the busbars are usually made of a silver-containing paste, while the remaining part of the solar cell rear side is covered with an aluminum paste.
- the screen printing is associated with a high mechanical stress on the semiconductor wafer used as a substrate for the solar cell manufacturing, for example.
- the screen printing method is not optimal also with regard to the electrical conductivity of the busbars produced by this method.
- impurity-free metallizations can be produced by means of vacuum coating processes by generating a metal vapor (such as, for example, vapor deposition or cathode sputtering).
- a metal vapor such as, for example, vapor deposition or cathode sputtering
- masks with structure-defining apertures must be used which outside the substrate to be coated cover structure-defining openings relative to the metal vapor and thereby be self-coated. In the course of using the mask, their structure-defining mask openings change, so that the mask must be cleaned or replaced regularly.
- the problem of successively clogging mask apertures is not limited to the manufacture of busbars in solar cell manufacturing, but concerns all manufacturing processes that use a pattern defining mask.
- the problem to be solved by the invention is to produce electrical solar cell contact structures on a substrate in a more efficient manner than heretofore, without mechanically stressing the substrate.
- the movement of the mask along a mask movement direction is effected at least in sections by the metal steam region occurs, wherein the substrate movement direction and the mask movement direction are substantially parallel to each other and the substrates and the mask are moved in amount at different speeds.
- the method according to the invention according to which the mask and the substrates are moved at different speeds through the metal vapor region during the production of the solar cell contact structure, there is the advantage that shielding areas of the mask, which have been coated by the metallic vapor, regularly from the metallic vapor be moved out.
- the mask is constantly renewed, so that deterioration of structure generation by clogging of the structure defining opening is prevented.
- the speed with which the mask is to be guided through the metal vapor region is determined, for example, by the thickness of the material layer produced by the metallic vapor on the mask.
- the movement speed of the mask can be adjusted so that the mask occupancy (deposition of the metal on the mask), in particular at the edges of the structure-defining opening, a certain (still tolerable) measure of the mask occupancy is not exceeded.
- the mask may be e.g. be moved much slower than the substrate. It is also conceivable to move the mask much faster than the substrates through the metal vapor region and to reverse the direction of movement of the mask after reaching the end of the mask. This is particularly advantageous if the usually exothermal condensation enthalpy of the metal vapor per unit length on the mask is to be limited so that the mask does not exceed a defined temperature value.
- the mask is preferably arranged at a distance from a side of the substrates facing the metallic vapor.
- the distance is small, usually less than a millimeter. Further embodiments of the spacing of the mask can be found in connection with the embodiments shown in the figures. The statements there expressly refer to the present claimed feature combination of the method and the device.
- mask spacing is not mandatory.
- a contact of the mask on the substrates in a sliding movement is also feasible.
- the mask is in the form of a flexible medium, for example a band. Coated portions of such a band-shaped mask running out of the metal vapor region can be wound up and stored, for example, in a first receptacle in the form of a coil.
- the mask runs from a second shot, starting in the metal vapor region.
- This second receptacle can also be designed as a coil and hold the mask. It is also conceivable to provide a bidirectional operation for the mask movement.
- the mask is first wound in a coil of the first recording coming from the metal vapor region. When the end of the mask is reached, the mask movement direction reverses and the original unwinding reel now rewinds the retreating mask.
- an at least partially coated mask is held on a spool and unrolled through the metal vapor region.
- a receptacle may be provided for storage, which need not necessarily be formed as a coil.
- a band-shaped mask is advantageous, but other embodiments of the mask are possible, for example, a mask in the form of a (eg metallic) bar, which is moved by the metal vapor.
- the production of the metallic vapor is carried out in a manner known per se, e.g. by means of a sputtering or vapor deposition process, which is carried out in a vacuum system.
- the mask is arranged at least in sections - in the metal vapor region - together with the substrate in the vacuum system.
- Movement of the mask through the metal vapor through the metal vapor region is preferably continuous, i. the (e.g., band-shaped) mask is continuously moved by the vapor in forming the solar cell contact structure. Furthermore, it is also possible that the movement of the mask is stepwise, e.g. after making the solar cell contact structure, a portion of the mask is moved so that the coated during manufacture portion of the mask completely moved out of the steam and is replaced by an unused or still consumable portion of the mask.
- the substrates through the metal vapor region they can be moved in the same or opposite direction as the mask through the metal vapor region.
- the decisive factor is that the movement of substrate and mask is not synchronized. If the substrate and the mask are moved in the same direction, the speed of the mask is chosen to be different in magnitude from the speed of the substrate.
- the mask is formed by at least two separate elements, which are arranged spaced from one another such that the structure-defining opening is formed by their distance from each other.
- the distance between the elements formed, for example, as two mask bands accordingly defines the structure-defining mask opening, by the metallic vapor on the substrates is transmitted to produce on each substrate, the solar cell contact structure.
- the individual elements themselves have no openings, but the solar cell contact structure is defined on the substrate solely by the distance (gap) between the EIe- elements.
- the individual elements may additionally have openings for creating further structures on the substrate.
- the elements preferably run parallel to one another - viewed in a direction perpendicular to their direction of movement. If the elements are formed, for example, in the manner of a ribbon or foil, they extend along a common plane, opposite edge sections of two adjacent elements extending in the region of the metallic vapor at a constant distance from one another. Here, by the distance of the elements to each other, a strip-shaped opening and thus a strip-shaped solar cell contact structure.
- deposited metallic material is removed from it by utilizing the movement of the mask.
- the removal is advantageously carried out mechanically, for. B. using a cutting edge or a sharp edge, which is arranged so that a led out of the metallic vapor, coated portion of the mask is passed close to the edge or edge, so that ist- dissolves different material from the mask.
- a deflecting device which deflects the mask so that a coated section of the mask tapering towards the deflecting structure forms an acute angle with a section of the mask running away from the deflecting structure and the deflector on the Mask dissolves separated material at the deflection structure.
- Recovery of the material is particularly efficient in relative movement between the mask and the substrates during solar cell contact structure fabrication because the mask, unlike a single mask, can be passed through the metal vapor region at a much slower rate than the substrate.
- a single mask is always moved synchronously with a substrate designed, for example, as a wafer, or is not moved during the production of the solar cell contact structure and is removed from the metal vapor together with the substrate after a single production step.
- Only a very thin metal layer was deposited on a mask on a mask, which would be difficult to recycle.
- operating with bidirectional mask motion would allow the mask to be moved at a much faster speed relative to the substrate. Reference is made to the statements made in this respect.
- Another variant for recovering the metallic material deposited on the mask when fabricating the solar cell contact structure is that the mask is formed of the same material as that used to make the solar cell contact structure (eg, in shape) a thin silver foil). Here, the recovery would then be done simply by melting the mask and at the same time on her deposited metallic material.
- Another variant is to make the mask from a residue-free burning material. When the used mask or a consumed section of the mask is burnt, the metallic material deposited on the mask remains.
- the mask has a surface on which the metal sufficiently adheres during the manufacturing process for the solar cell contact structures, but it is easily mechanically removable after removing the mask from the metallic vapor.
- special coatings of the metallic steam side facing the mask are conceivable.
- the removal of the material deposited on the mask may be carried out in the manufacturing facility (i.e., e.g., the sputtering or vapor deposition equipment) and the mask may e.g. also circulate in the form of an endless belt in the system.
- a further recovery variant envisages that metallic material deposited on the mask after the production of the solar cell contact structure is removed therefrom in a chemical manner.
- the mask is preferably made of a material which is resistant to a suitable chemical solvent, so that the material deposited on the mask can be chemically dissolved and subsequently recycled from the solution.
- a particularly advantageous variant of the invention relates to the use of a wafer (for example of silicon) as substrate, wherein the wafer is used for the production of solar cells.
- Solar cell series production involves processing a plurality of wafers in succession. This is possible with the inventive method, for. B. via a conveyor belt transport system, which leads a series of wafers directly behind one another through the metallic vapor of a correspondingly formed in-line vacuum system.
- the wafer (or all wafers of a production series) are continuously guided, for example, through the metal vapor region.
- the wafer for solar cell production particularly preferably has or should have a front side with a photosensitive side of the solar cell (if this has not yet been produced in the production process for the solar cell), the solar cell contact structure producing on a rear side of the wafer facing away from the front side becomes.
- the structure to be produced is a busbar via which further contact elements (in particular metal connectors) can be connected (soldered) to an adjacently arranged solar cell.
- metallization of the wafer backside e.g. B. with a full-surface aluminum layer. It is advantageous here to apply the solar cell contact structure immediately after the aluminum metallization (without interrupting the vacuum) in order to avoid oxidation of the aluminum prior to application of the solar cell contact structure.
- the busbars are preferably fabricated as strip contacts by the present method.
- Other candidate metals such as tin or nickel, are more disadvantageous to the efficiency of the solar cell in connection with certain processes for backside design of solar cells, such as laser fired contact fabrication.
- the substrate does not necessarily have to be a wafer, but can also be designed, for example, in the form of a plastic film or a glass carrier.
- the invention further provides an apparatus for producing a solar cell contact structure on a plurality of substrates, comprising:
- a metal vapor generating means for generating a metallic vapor in a metal vapor region for producing at least one of the solar cell contact structure on the substrates; Means for moving the substrates (3) in a row along a substrate movement direction (A) through the metal vapor region,
- the device may, for. B. in a vacuum system (vapor deposition or Sputter- anläge) be integrated.
- a vacuum system vapor deposition or Sputter- anläge
- the means for moving the mask are designed such that the mask is arranged at a distance from a side facing the metallic vapor (31) of the substrates.
- the means for moving the mask preferably have a first receptacle which is adapted to receive the portions that run out of the metal vapor region the mask is used.
- This first receptacle is preferably in the form of a coil which receives a windable, eg band-shaped mask.
- a second receptacle may also be provided in the form of a coil, from which portions of the mask run into the metal vapor region.
- band-shaped mask can thus be moved between two coils similar to a tape through the metal vapor region. If both coils are designed as on-unwinding coil, bidirectional movement of the mask is ensured.
- the device preferably has release means for peeling off when fabricating the solar cell contact structure on the mask deposited metallic material, wherein the detachment takes place by utilizing the movement of the mask.
- This can be z. B. be a cutting edge, which is arranged in relation to the mask, that upon movement of the mask, the deposited material is detached by the cutting edge.
- a deflecting structure may be present, which deflects a band-shaped mask sharply so that detachment of deposited material from the mask takes place by deflecting the mask.
- FIG. 1 shows a representation of a section of a solar cell rear side.
- FIG. 2 a schematic representation of an embodiment of the device according to the invention for producing solar cell contact structures
- Fig. 3 shows schematically an arrangement for detaching metallic material from a flexible mask element.
- FIG. 1 shows a section of a back 1 of a solar cell in plan view.
- the solar cell is made of a silicon substrate and has on her Back 1 on a full surface applied to the substrate aluminum layer 11.
- solar cell contact structures in the form of two mutually spaced extending and mutually parallel contact strips 12 are arranged in silver.
- the contact strips 12 constitute so-called busbars which serve for connection (by means of soldering) to further contact elements of the solar cell, in particular for soldering the solar cell rear side with metal connectors, via which in turn a plurality of solar cells are interconnected.
- the busbars 12 shown in FIG. 1 have a width of approximately 5 mm and extend from a first edge of the cell to a second edge of the solar cell opposite the first edge.
- FIG. 2 shows a variant of the device according to the invention for producing electrical solar cell contact structures.
- a metal vapor source 2 metal vapor generating device
- a metal vapor source 2 metal vapor generating device
- the illustrated apparatus is suitable for series production of solar cells, wherein a plurality of substrates 3 (in the form of wafers) are successively guided (along the substrate movement direction indicated by the arrow A) through the metal vapor 21.
- a band-shaped mask 4 which is formed of three elements in the form of each extending in the region of the metallic vapor 21 along the substrate movement direction A single bands 41.
- the individual bands 41 are arranged side by side and extending in the region of the metallic vapor 21 in a common plane.
- Two adjacent individual bands 41 each have a distance d to each other, so that between strips 42 opposite edges 42, a strip-shaped opening 49 is formed, which extends along the direction of movement A of the substrates 3.
- the mask 4 shadows the substrates 3 passing through the metallic vapor 21 down to the region of the opening 49 between the individual strips 41, whereby strip-shaped solar cell contact structures are produced on the substrate rear side 31.
- the bands 41 are in turn moved along a substrate movement direction B, which is opposite to the substrate movement direction A, through the metallic vapor 21, due to the parallel arrangement of the bands their distance from each other - and thus the contour 48 of the opening formed between them 49 and their position in the metal vapor - and their distance a to the substrates 3 not changed.
- the movement of the individual bands 41 is carried out continuously or stepwise, depending on the application, wherein the individual bands can move synchronously.
- a synchronous movement of the individual bands is not mandatory; It is also possible, for example, that adjacent bands move in opposite directions.
- a section 41a of a single strip 41 coated by the metallic vapor 21 is permanently moved out of the metallic vapor 21, at the same time a hitherto uncoated section 41b of a single strip 41 being guided into the metallic vapor 21.
- each individual belt 41 is moved so far that the portion of the respective individual belt coated during the production of the solar cell contact structure is led out of the metallic vapor 21 completely.
- the movement of the mask is relative (in this case opposite) to the substrates, i. the single bands are moved at different speeds compared to the substrates.
- the device shown in Figure 2 as a means of movement, by means of which the bands 41 are moved, a first receptacle with a first coil 43 and a second receptacle with a second coil 44, which are each associated with a single band 4.
- the coated portion 41a of one of the single bands 41 is moved out of the metallic vapor 21 and on wound up the first coil 43.
- the uncoated portion 41a of one of the bands 41 which has not yet been guided by the metallic vapor 21, is guided into the vapor simultaneously with the moving out of the coated portion 41a, wherein uncoated band is further unwound from the second coil 44.
- the coils 43 and 44 are correspondingly arranged such that the portion of one of the bands 41 located between the coils 43, 44 extends in each case through the region of the metallic vapor 21 in order at least partially to shade the substrate 3 from the vapor.
- the individual strips 41 are arranged in the metal vapor region at a distance a from the substrates 3 to be coated, whereby the movement of the strips 41 in one direction counter to the direction of movement of the substrates is particularly well possible.
- a distance of about one millimeter between substrate and mask can be selected, wherein at such a distance sufficient for a stripe structure sharpness of the image (the metal vapor) and thus the metal deposition on the substrate can be achieved.
- the bands 41 are formed of a foil having a thickness in the range of 50-200 microns.
- the still tolerable maximum distance between the substrate and the mask depends on the chosen deposition process, that is on the type and the concrete process parameters of the process to produce the metallic vapor.
- the source 2 shown in Figure 2 is representative of the source a metal vapor generating method, such as the sputtering or vapor deposition method (in which methods, a metal target or crucible with metal to be melted is provided as a source).
- the mask 4 is in sliding contact with the substrates 3 and thus there is no distance between the substrates 3 and the mask 4.
- FIG. 3 shows a detachment device 5 for detachment of metallic material deposited on a metallic vapor material passing through element.
- the detaching device 5 of FIG. 3 can be integrated into a device according to FIG. 2, for example.
- a belt-shaped element 41 is moved out with a section B in a direction B from a process zone of a metal vapor generating device (ie, metallic vapor generated by the device, see FIG. 2), with the section 45 coated with metallic material 22.
- a metal vapor generating device ie, metallic vapor generated by the device, see FIG. 2
- the element 41 is coming from the metal vapor via a first guide pulley 61 directed to a deflection structure in the form of another guide roller 62, the guide roller 62 defines a deflection point 63, so that the tapering point 63 tapered portion 45 of the element 41 and one of the Turning 63 away from the running portion 46 of the element 41 form an acute angle ⁇ . Due to the acute angle ⁇ between the incoming and outgoing strip, the metallic material deposited on the mask is released (in the shearing direction C).
- the band-shaped element 41 is led away from the deflection roller 62 via a further deflection roller 64.
- the parts of the strip 41 freed from the metal coating to be wound onto a spool (not shown) and the strip to be used again immediately, as soon as the complete strip has been guided and cleaned by the metallic vapor, for example by replacement the coils.
- the band-shaped element 41 is formed as an endless belt, so that a freed from the metal coating portion of the band-shaped element is deflected again in the direction of the metallic vapor and thus again serves as a mask element in producing a solar cell contact structure on a substrate. Cumulatively or alternatively to a mechanical removal of the deposited material on the mask 4 22, a chemical detachment of this material 22 is conceivable.
- the metal coating In order to facilitate the detachment of the metal coating from the element, it may have a non-stick coating on its side exposed to the metallic vapor. It is important to ensure that this non-stick coating is designed so that a certain adhesion of the metal is possible (to avoid fluttering of the metal), but the shearing on the pulley is simplified.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006055862A DE102006055862B4 (de) | 2006-11-22 | 2006-11-22 | Verfahren und Vorrichtung zum Herstellen einer elektrischen Solarzellen-Kontaktstruktur an einem Substrat |
PCT/EP2007/062723 WO2008062050A2 (de) | 2006-11-22 | 2007-11-22 | Verfahren und vorrichtung zum herstellen eines elektrischen solarzellen-kontaktstruktur an einem substrat |
Publications (1)
Publication Number | Publication Date |
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EP1943685A2 true EP1943685A2 (de) | 2008-07-16 |
Family
ID=39326370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07847289A Withdrawn EP1943685A2 (de) | 2006-11-22 | 2007-11-22 | Verfahren und vorrichtung zum herstellen eines elektrischen solarzellen-kontaktstruktur an einem substrat |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1943685A2 (de) |
DE (1) | DE102006055862B4 (de) |
WO (1) | WO2008062050A2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102009018653B4 (de) | 2009-03-04 | 2015-12-03 | SolarWorld Industries Thüringen GmbH | Verfahren zur Herstellung von Halbleiterbauelementen unter Nutzung von Dotierungstechniken |
DE102012016375B4 (de) * | 2012-08-13 | 2018-05-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung dielektrischer Elastomeraktoren |
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US4335161A (en) * | 1980-11-03 | 1982-06-15 | Xerox Corporation | Thin film transistors, thin film transistor arrays, and a process for preparing the same |
US4400577A (en) * | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
JPS5848473A (ja) * | 1981-09-17 | 1983-03-22 | Konishiroku Photo Ind Co Ltd | アモルフアスシリコン太陽電池の製造方法 |
JPS60119784A (ja) * | 1983-12-01 | 1985-06-27 | Kanegafuchi Chem Ind Co Ltd | 絶縁金属基板の製法およびそれに用いる装置 |
EP0118576B1 (de) * | 1983-03-11 | 1987-12-02 | Hitachi, Ltd. | Verfahren zur Herstellung von Dünnschichten |
JPS60117686A (ja) * | 1983-11-30 | 1985-06-25 | Hitachi Ltd | 薄膜太陽電池の連続製造装置 |
CA2052414A1 (en) * | 1990-11-21 | 1992-05-22 | Robert Parker | Substrate with thin film conductive layer with highly conductive bus bar and method |
DE4225385C2 (de) * | 1992-07-31 | 1994-09-29 | Siemens Solar Gmbh | Verfahren zur kostengünstigen Herstellung einer Schicht eines ternären Verbindungshalbleiters |
EP0996967B1 (de) * | 1997-06-30 | 2008-11-19 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung von schichtartigen Gebilden auf einem Halbleitersubstrat, Halbleitersubstrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente |
DE10017610C2 (de) * | 2000-03-30 | 2002-10-31 | Hahn Meitner Inst Berlin Gmbh | Verfahren zur Herstellung eines Solarmoduls mit integriert serienverschalteten Dünnschicht-Solarzellen und Verwendung davon |
US20050072455A1 (en) * | 2002-04-04 | 2005-04-07 | Engineered Glass Products, Llc | Glass solar panels |
-
2006
- 2006-11-22 DE DE102006055862A patent/DE102006055862B4/de active Active
-
2007
- 2007-11-22 EP EP07847289A patent/EP1943685A2/de not_active Withdrawn
- 2007-11-22 WO PCT/EP2007/062723 patent/WO2008062050A2/de active Application Filing
Non-Patent Citations (1)
Title |
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See references of WO2008062050A2 * |
Also Published As
Publication number | Publication date |
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DE102006055862B4 (de) | 2008-07-03 |
WO2008062050A2 (de) | 2008-05-29 |
WO2008062050A3 (de) | 2008-08-14 |
DE102006055862A1 (de) | 2008-05-29 |
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