EP1744395A1 - Leistungsteiler/Leistungskombinierer auf einem Substrat mit hohem dielektrischen Verlust. - Google Patents

Leistungsteiler/Leistungskombinierer auf einem Substrat mit hohem dielektrischen Verlust. Download PDF

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Publication number
EP1744395A1
EP1744395A1 EP05425501A EP05425501A EP1744395A1 EP 1744395 A1 EP1744395 A1 EP 1744395A1 EP 05425501 A EP05425501 A EP 05425501A EP 05425501 A EP05425501 A EP 05425501A EP 1744395 A1 EP1744395 A1 EP 1744395A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
microstrip
slot
microstrips
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP05425501A
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English (en)
French (fr)
Inventor
Carlo Buoli
Stefano Fusaroli
Vito Marco Gadaleta
Fabio Morgia
Tommaso Turillo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Solutions and Networks SpA
Original Assignee
Siemens SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens SpA filed Critical Siemens SpA
Priority to EP05425501A priority Critical patent/EP1744395A1/de
Publication of EP1744395A1 publication Critical patent/EP1744395A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the present invention relates to the field of the microwave power combiners/splitters manufactured in planar technology, and more precisely to microwave power combiners/splitters on high-loss dielectric substrates.
  • a dielectric substrate 90 bears three MMICs (Microwave Monolithic Integrated Circuit) power amplifiers 54, 62, 66, a power divider 56 (rate race), and some interconnecting transmission lines 52, 60, 60', 64, and 64' fashioned as microstrips.
  • the first amplifier 54 receives an input signal on a microstrip 52 and forwards a firstly amplified signal to a first port of the power divider 56.
  • Two split signals with 180 degrees phase displacement are present at a second and third port of the power divider 56; these ports are coupled to two microstrips 60' and 64', while a fourth port is terminated on a 50 Ohm matched load.
  • the 0 degrees split signal reaches the input of the amplifier 62, while the 180 degrees split signal reaches the input of the amplifier 66.
  • Microstrips 60' and 64' at the output of respective amplifiers 62 and 66 form right-angle paths in such a way to terminate with opposed microstrip launchers 92, also referred as probes, at the microstrip-to-waveguide transition 68 (shown in dashed line).
  • the two probes 92 are positioned 180 degrees apart orthogonally to the opposite longer sides of the rectangular opening of the waveguide. Signals at the output of the amplifiers 62 and 64 are combined inside the waveguide without additional losses other than normal 0.25 to about 0.30 dB loss.
  • the configuration with two 180 degrees out-of-phase input signals and two output signals summed up in counter-phase is known as push-pull.
  • Other geometries are proposed having four launchers, two by two orthogonally intersecting opposite sides of the rectangular opening of the transition 68, with the launched signals having 180 degrees phase displacement to each other.
  • These other configurations are all referable to the push-pull case, otherwise they are not completely understandable, such as a configuration reproduced in fig.11 (not shown) which generates both the fundamental TE 10 and an additional TE 01 mode below the cut-off frequency and hence suppressed.
  • a metal base plate 94 (e.g.: aluminium or similar material) supports the dielectric substrate 90 and may include an interposed ground layer 94a.
  • a waveguide back-short 96 is positioned opposed a waveguide opening 98 of the transition 68.
  • the waveguide opening 98 is formed in a waveguide support plate or top metal cover as illustrated at 99.
  • the waveguide opening 98 forms a waveguide launch 98a.
  • a back-short cavity 100 is positioned for reflecting energy into the waveguide opening 98. Isolation/ground via-holes are formed around the transition 68.
  • a completely satisfactory design for planar power combiners/splitters suitable for microwaves up to 50 GHz are presently unknown in the art.
  • a reason is that low-loss dielectric substrates, such as alumina, are needed in this frequency range.
  • Alumina substrates are indicated for obtaining microwave circuits of good quality, even at the highest frequencies, but the excessive hardness and fragility of alumina prevent the extension to the alumina substrates of the automatic or semiautomatic assembly techniques already widely used in the manufacturing of the printed circuit boards (PCB).
  • PCB printed circuit boards
  • the ideal should be a microwave power combiner/splitter for SHF/EHF band suitable to be realized with low-cost dielectric substrates, for example employing the same manufacturing process of the printed circuit boards together with surface mounting techniques.
  • a desirable power combiner should sum up the two power signals into the waveguide directly, avoiding in this manner additional transition means similar to beam-leads or the like. Dual behaviour is desirable for a splitter.
  • the power combiner of the figures 1 and 2 just for the presence of: (textually) "the dielectric substrate 90 formed from ceramic substrate or either similar soft board material, including alumina", is unsuitable to be implemented as a printed circuit board.
  • Low-loss (and hence costly) dielectric substrates are mandatory with this combiner; the reasons are due to the corner geometry of probes which is suitable to combine push-pull signals into the waveguide directly, the length of the probes, and the position of the metal plate 94 in respect of the waveguide 99.
  • high-loss dielectric substrates such as FR4, attenuate little more than 1 dB for wavelength.
  • the push-pull summation of the prior art forces to space out the two power amplifiers 62 and 66 in a way that the corner-shaped microstrips 60' and 64' inclusive of the launchers 92 elongate almost two wavelengths altogether.
  • the main object of the present invention is that to indicate a 3 dB power combiner/splitter for SHF/EHF band up to 50 GHz suitable to be realized on low-cost (and hence high-loss) dielectric substrates, employing the same manufacturing process as printed circuit boards and surface mounting techniques traditionally used in lower frequency ranges.
  • the invention achieves said object by providing a microstrip-to-waveguide power combiner, as disclosed in claim 1.
  • the starting point to design a combiner/splitter compliant with the present invention is a transition disclosed in the European patent application EP 1367668 , titled: "BROADBAND MICROSTRIP TO WAVEGUIDE TRANSITION ON MULTILAYER PRINTED CIRCUIT BOARDS ARRANGED FOR OPERATING IN THE MICROWAVES", filed by the same Applicant in date 30-05-2002 (priority date).
  • the invention disclosed in this document is relevant to a microstrip-to-waveguide transition whose particular combination of features makes it suitable to be implemented at the end of a microstrip laid down on a dielectric substrate characterized by high dielectric losses.
  • the transition according to EP 1367668 includes a FR4 dielectric substrate 1 bearing a metallic line 2 laid down on its upper surface.
  • the line 2 terminates with a patch 3 in correspondence of a rectangular slot 4 (dashed line) opened into a thick metal plate 5 (copper) in contact with the bottom surface of the dielectric substrate 1 (upper and bottom shall be assumed as a convention).
  • the thick copper plate 5 constitutes an electrical ground plane for the microstrip 2, offers mechanical stiffness to the dielectric substrate 1 adherent to it, and dissipates the heat generated by active devices placed on it (not shown).
  • the copper plate 5 is milled for a certain depth of its thickness around slot 4 in order to obtain a rectangular cavity 6 open at one end and closed on top wall with the exception of slot 4.
  • the latter is filled up with the same material of the substrate, staring from an FR4 prepreg.
  • the rectangular slot 4 is dimensioned to couple energy optimally in the desired frequency band (from 27.5 to 33.5 GHz) between patch 3 and the contiguous cavity 6.
  • a transition from the electromagnetic propagation mode of the microstrip 1 (nearly TEM) to the TE10 mode of the waveguide takes place at slot 4 interface.
  • Fig.4 shows a longitudinal cross-section taken across the axis A-A of fig.3a.
  • two microstrips ending with a respective patch are laid down on the front face of a high-loss dielectric substrate.
  • the two microstrips are faced to a rectangular slot opened in a ground metal plate adherent to the rear face of the substrate.
  • Slot is filled up with the material of the substrate and is dimensioned so as to optimize inside the desired frequency band the transition between quasi-TEM mode of microstrip to TE 10 mode of a rectangular waveguide obtained in the mechanics in contact with the metal plate around the slot.
  • Both metal plate end the mechanics have milled contiguous tracts with enlarged cross-section in respect of the slot. These two tracts together behave as a waveguide impedance transformer between first slot and waveguide.
  • the two microstrips maintain parallel to each other and cross the contour of the underneath slot perpendicularly to a longer side.
  • the two microstrips are coupled to the outputs of two respective power amplifiers which fed them with two signals summed up in-phase into the waveguide.
  • Further object of the invention is a variant to improve the return loss measured at the output of the waveguide.
  • a microstrip at the output of a first power amplifier is made ⁇ /4 longer than the microstrip at the output of the second amplifier, and in the meanwhile the microstrip at the input of the second amplifier is made ⁇ /4 longer than the microstrip at the input of the first amplifier.
  • the total length crossed by the two signals are the same, but the signal first time reflected from the waveguide towards the output of the first amplifier reaches the transition again 180 degrees out of phase and is suppressed consequently because shifted under the dominant mode. Low additional losses in respect of the preceding structure are due to the longer ⁇ /4 path of the first microstrip.
  • the same structure of the combiner can be used as 3dB power splitter simply by entering an input signal in the waveguide and capturing two in-phase split signals at the end of two short microstrips coupled to the waveguide through the transition slot.
  • Microwave balanced circuits avail of this splitter.
  • the proposed combiner/splitter shows a large bandwidth and low losses with any kind of substrate included FR4. This allows saving costs by using standard PCB and mechanical manufacturing.
  • the invention may be used in several configurations in order to improve output waveguide return losses; direct coupling to the antenna without circulators is therefore possible.
  • the integration of the microstrip-to-waveguide transition on the suggested FR4 structure allows obtaining a complete transmitter, or receiver, or both on the same board. Moreover, as the transition shows low sensitivity to manufacturing tolerances, the above process is characterized by high reliability and reproducibility.
  • two parallel lines 2b and 2c terminating with a respective square patch 3b and 3c are visible on a conventionally named front face of a dielectric substrate 1c characterized by high losses.
  • Vetronite ® FR4
  • lead free material are used.
  • a hollow metallic lid 11c is superimposed to the substrate 1c constituting the first layer upon the zone around the patches 3b and 3c.
  • Lid 11 c includes four threaded holes in the corners for fixing it to the substrate 1 c, by means of screws penetrating the underneath mechanical part.
  • the plant view shows three dashed rectangular lines concentric to each other and referred to elements of the rear face: the inmost 4c is the trace of a first slot opened into a thick metal plate; the intermediate 6c is the trace of a second slot in communication with the first one; and the outer is the trace of a cross-section of a waveguide 7c.
  • the following dimensions (mm) are indicated for a combiner operating in the 27.5 - 29.5 GHz frequency band: L0 0.2; L1 3.38; L2 x L3 1.4x7.12; L4 1; L5 0.5; L6 x L7 2 x 7.12; L8 x L9 3.56 x 7.52.
  • the exploded sectioned view shows the thick metal plate 5c as a second layer (core), which is both electrical ground and heat sink for microwave devices and it offers a strong support to the upper thin FR4 layer.
  • Slot 4c is milled in the thickness of plate 5c, opposite to the patches 3a and 3b, and successively filled with FR4 to be homogeneous with the material of first layer.
  • the thick metal plate 5c is further milled for a certain depth around slot 4c to obtain a second slot 6c of rectangular cross-section.
  • the mechanics in contact with plate 5c is milled for obtaining a third slot 8c, as a continuation of the second slot 6c, in the top of a rectangular waveguide 7c with standard cross-section.
  • Fig.7 is a cross-section along the axis B-B of fig.5 which shows the elements of the preceding figure with the indication of the following dimensions (mm): L10 0.1 ; L11 0.3; L12 1 ; L13 3.8; L14 3.
  • a third and fourth dielectric layers can be provided to form a multilayer structure like the one of fig.4. Additional paths for bias, IF and control signals can be housed on the third layer whereas the fourth layer is a further ground plane.
  • the two microstrips 2a and 2b of equal length are coupled to the output of respective FETs which output two microwave signals Sa and Sb with the same phase. These signals reach the patches 3a and 3b in phase where are irradiated towards slot 4c undergoing a transformation from quasi-TEM propagation mode of microstrips 2a, 2b to TE 10 dominant mode of the waveguide 7c.
  • Lid 11c is a metallic hollow body placed upon the transition zone to reflect back energy toward slot 4c avoiding on air propagation. The short-circuit present at the top wall of lid 11c is transformed into an open circuit at the transition plane by the internal ⁇ /4 depth.
  • the combiner of fig.5 is used in the balanced structure of fig.8 which is aimed to reduce reflection losses.
  • a left part (in dashed contour) is joined to the two preceding microstrips 2a and 2b.
  • the input signal Sin is coupled to a Wilkinson hybrid which splits Sin in two equal signals Sb, Sa in-phase to each other.
  • These signals are coupled to the input of respective power amplifiers PWAb and PWAa: signal Sb is coupled directly while signal Sa through a ⁇ /4 microstrip DLa.
  • the output of the PWAb and PWAa amplifiers are respectively coupled to the microstrip 2b and 2a terminating with the patches 3b and 3a.
  • Microstrip 2b includes a supplementary path DLb which extend of ⁇ /4 the length of 2b in respect of 2a. In this way it's possible to improve the return loss at the waveguide side.
  • the TE 10 mode coming from the waveguide, once reflected at the output of PWAb reaches slot 4c again 180 degrees shifted and it becomes a TE 01 mode which is below waveguide cut-off.
  • the field becomes a TE 10 again and the overall effect is that the measure of return loss is doubled (in negative dB), as shown in fig.11.
  • the structure depicted in figures 5 to 7 has been simulated for a splitter operating within 27.5 - 29.5 GHz band.
  • Ansoft electromagnetic simulator is used.
  • simulation results show return losses better than 20 dB and the insertion loss is only 0.5 dB greater than an ideal 3dB splitter.
  • Simulation results relevant to the combiner structure of fig.8 are shown in fig.11 .
  • Two curves of return loss are compared in the figure: the single device return loss and waveguide return loss. The latter is 10 dB lower than the first curve thanks to the suppression of the firstly reflected TE 10 mode coming from waveguide.

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  • Microwave Amplifiers (AREA)
EP05425501A 2005-07-12 2005-07-12 Leistungsteiler/Leistungskombinierer auf einem Substrat mit hohem dielektrischen Verlust. Ceased EP1744395A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05425501A EP1744395A1 (de) 2005-07-12 2005-07-12 Leistungsteiler/Leistungskombinierer auf einem Substrat mit hohem dielektrischen Verlust.

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EP05425501A EP1744395A1 (de) 2005-07-12 2005-07-12 Leistungsteiler/Leistungskombinierer auf einem Substrat mit hohem dielektrischen Verlust.

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009114731A2 (en) * 2008-03-13 2009-09-17 Viasat, Inc. Multi-level power amplification system
US7812686B2 (en) 2008-02-28 2010-10-12 Viasat, Inc. Adjustable low-loss interface
US7855612B2 (en) 2007-10-18 2010-12-21 Viasat, Inc. Direct coaxial interface for circuits
CN101466197B (zh) * 2007-12-21 2012-11-14 艾利森电话股份有限公司 电路板及设置于其上的功放、双通道收发单元、无线基站
WO2013017846A1 (en) * 2011-07-29 2013-02-07 Bae Systems Plc Radio frequency communication
CN105119034A (zh) * 2015-09-14 2015-12-02 关其格 一种电力系统检测通信系统
CN106684517A (zh) * 2017-03-01 2017-05-17 电子科技大学 新型宽带3dB90°电桥
CN108232392A (zh) * 2017-12-26 2018-06-29 广东盛路通信科技股份有限公司 合路器与功分器一体化的射频器件
WO2018214544A1 (zh) * 2017-05-25 2018-11-29 周丹 第二槽口的3dB电桥
WO2018214545A1 (zh) * 2017-05-25 2018-11-29 周丹 一种设有第二槽口的同频合路器
CN109728394A (zh) * 2018-12-08 2019-05-07 广东盛路通信科技股份有限公司 带功率分配功能的微带合路器
GB2587034A (en) * 2019-09-10 2021-03-17 Filtronic Broadband Ltd An amplifier for a transceiver and a transceiver comprising such an amplifier
CN113839168A (zh) * 2021-09-16 2021-12-24 中国科学院空天信息研究院粤港澳大湾区研究院 用于反相功率分配或合成的电路结构
CN114284674A (zh) * 2021-11-24 2022-04-05 电子科技大学 一种具有低插入损耗的耦合型波导微带过渡结构
CN115458892A (zh) * 2022-10-10 2022-12-09 南京邮电大学 基于圆形siw谐振腔的四路同相不等功分器

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WO2003092115A1 (en) * 2002-04-23 2003-11-06 Xytrans, Inc. Microstrip-to-waveguide power combiner for radio frequency power combining
EP1367668A1 (de) * 2002-05-30 2003-12-03 Siemens Information and Communication Networks S.p.A. Breitbandiger Mikrostreifenleiter-Hohlleiterübergang auf einer Mehrschichtleiterplatte

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WO2003092115A1 (en) * 2002-04-23 2003-11-06 Xytrans, Inc. Microstrip-to-waveguide power combiner for radio frequency power combining
EP1367668A1 (de) * 2002-05-30 2003-12-03 Siemens Information and Communication Networks S.p.A. Breitbandiger Mikrostreifenleiter-Hohlleiterübergang auf einer Mehrschichtleiterplatte

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Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7855612B2 (en) 2007-10-18 2010-12-21 Viasat, Inc. Direct coaxial interface for circuits
CN101466197B (zh) * 2007-12-21 2012-11-14 艾利森电话股份有限公司 电路板及设置于其上的功放、双通道收发单元、无线基站
US7812686B2 (en) 2008-02-28 2010-10-12 Viasat, Inc. Adjustable low-loss interface
US9368854B2 (en) 2008-03-13 2016-06-14 Viasat, Inc. Multi-level power amplification system
WO2009114731A3 (en) * 2008-03-13 2009-12-03 Viasat, Inc. Multi-level power amplification system
US8212631B2 (en) 2008-03-13 2012-07-03 Viasat, Inc. Multi-level power amplification system
WO2009114731A2 (en) * 2008-03-13 2009-09-17 Viasat, Inc. Multi-level power amplification system
US8598966B2 (en) 2008-03-13 2013-12-03 Viasat, Inc. Multi-level power amplification system
WO2013017846A1 (en) * 2011-07-29 2013-02-07 Bae Systems Plc Radio frequency communication
AU2012291866B2 (en) * 2011-07-29 2015-10-29 Bae Systems Plc Radio frequency communication
US9203132B2 (en) 2011-07-29 2015-12-01 Bae Systems Plc Transition interface having first and second coupling elements comprised of conductive tracks oriented at different angles with respect to each other
CN105119034A (zh) * 2015-09-14 2015-12-02 关其格 一种电力系统检测通信系统
CN105119034B (zh) * 2015-09-14 2016-05-04 国家电网公司 一种电力系统检测通信系统
CN106684517B (zh) * 2017-03-01 2020-11-27 电子科技大学 新型宽带3dB90°电桥
CN106684517A (zh) * 2017-03-01 2017-05-17 电子科技大学 新型宽带3dB90°电桥
WO2018214544A1 (zh) * 2017-05-25 2018-11-29 周丹 第二槽口的3dB电桥
WO2018214545A1 (zh) * 2017-05-25 2018-11-29 周丹 一种设有第二槽口的同频合路器
CN108232392A (zh) * 2017-12-26 2018-06-29 广东盛路通信科技股份有限公司 合路器与功分器一体化的射频器件
CN109728394A (zh) * 2018-12-08 2019-05-07 广东盛路通信科技股份有限公司 带功率分配功能的微带合路器
CN109728394B (zh) * 2018-12-08 2023-08-04 广东盛路通信科技股份有限公司 带功率分配功能的微带合路器
GB2587034A (en) * 2019-09-10 2021-03-17 Filtronic Broadband Ltd An amplifier for a transceiver and a transceiver comprising such an amplifier
CN113839168A (zh) * 2021-09-16 2021-12-24 中国科学院空天信息研究院粤港澳大湾区研究院 用于反相功率分配或合成的电路结构
CN113839168B (zh) * 2021-09-16 2022-08-30 广东大湾区空天信息研究院 用于反相功率分配或合成的电路结构
CN114284674A (zh) * 2021-11-24 2022-04-05 电子科技大学 一种具有低插入损耗的耦合型波导微带过渡结构
CN115458892A (zh) * 2022-10-10 2022-12-09 南京邮电大学 基于圆形siw谐振腔的四路同相不等功分器
CN115458892B (zh) * 2022-10-10 2023-12-12 南京邮电大学 基于圆形siw谐振腔的四路同相不等功分器

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